WO2001046665A8 - Multivariate semiconductor pressure sensor with passageway - Google Patents

Multivariate semiconductor pressure sensor with passageway

Info

Publication number
WO2001046665A8
WO2001046665A8 PCT/US2000/034781 US0034781W WO0146665A8 WO 2001046665 A8 WO2001046665 A8 WO 2001046665A8 US 0034781 W US0034781 W US 0034781W WO 0146665 A8 WO0146665 A8 WO 0146665A8
Authority
WO
WIPO (PCT)
Prior art keywords
multivariate
passageway
substrate
semiconductor pressure
pressure sensor
Prior art date
Application number
PCT/US2000/034781
Other languages
French (fr)
Other versions
WO2001046665A9 (en
WO2001046665A1 (en
Inventor
Clifford D Fung
P Rowe Harris
Deguang Zhu
Original Assignee
Foxboro Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxboro Co filed Critical Foxboro Co
Priority to AU24464/01A priority Critical patent/AU2446401A/en
Publication of WO2001046665A1 publication Critical patent/WO2001046665A1/en
Publication of WO2001046665A8 publication Critical patent/WO2001046665A8/en
Publication of WO2001046665A9 publication Critical patent/WO2001046665A9/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
    • G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
    • G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

A multivariate semiconductor pressure sensor includes differential pressure sensing elements formed by a polysilicon membrane (14) spanning a sensor cavity (38) formed in a substrate (12). The sensor cavity (38) is in communication with fluid pressure on the back surface of the substrate (12) by way of a fluid passageway (46) that connects an exterior opening in the back surface of the substrate with an interior opening into either the sensor cavity (38) itself or into a feeder cavity (62) that is in fluid communication with the sensor cavity. Deep Reactive Ion Etching (DRIE) can be used to form the fluid passageway (46).
PCT/US2000/034781 1999-12-20 2000-12-20 Multivariate semiconductor pressure sensor with passageway WO2001046665A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU24464/01A AU2446401A (en) 1999-12-20 2000-12-20 Multi semiconductor pressure sensor with steep passageway

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46842099A 1999-12-20 1999-12-20
US09/468,420 1999-12-20

Publications (3)

Publication Number Publication Date
WO2001046665A1 WO2001046665A1 (en) 2001-06-28
WO2001046665A8 true WO2001046665A8 (en) 2001-10-11
WO2001046665A9 WO2001046665A9 (en) 2002-07-25

Family

ID=23859741

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/034781 WO2001046665A1 (en) 1999-12-20 2000-12-20 Multivariate semiconductor pressure sensor with passageway

Country Status (2)

Country Link
AU (1) AU2446401A (en)
WO (1) WO2001046665A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107894294A (en) * 2016-10-03 2018-04-10 大陆汽车系统公司 With the band chamber silicon-on-insulator MEMS pressure sensor devices for extending shallow polygon chamber

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790699B2 (en) 2002-07-10 2004-09-14 Robert Bosch Gmbh Method for manufacturing a semiconductor device
CN108254031B (en) * 2017-12-28 2020-07-10 上海工程技术大学 Differential pressure type gas micro-flow sensor and manufacturing method thereof
EP3654005B1 (en) * 2018-11-15 2022-05-11 TE Connectivity Solutions GmbH Differential pressure sensor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US5969591A (en) * 1991-03-28 1999-10-19 The Foxboro Company Single-sided differential pressure sensor
US5220838A (en) * 1991-03-28 1993-06-22 The Foxboro Company Overpressure-protected, differential pressure sensor and method of making the same
US5632854A (en) * 1995-08-21 1997-05-27 Motorola, Inc. Pressure sensor method of fabrication
EP0890998A1 (en) * 1997-07-07 1999-01-13 STMicroelectronics S.r.l. Manufacturing method and integrated piezoresistive pressure sensor having a diaphragm of polycristalline semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107894294A (en) * 2016-10-03 2018-04-10 大陆汽车系统公司 With the band chamber silicon-on-insulator MEMS pressure sensor devices for extending shallow polygon chamber

Also Published As

Publication number Publication date
AU2446401A (en) 2001-07-03
WO2001046665A9 (en) 2002-07-25
WO2001046665A1 (en) 2001-06-28

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