AU2446401A - Multi semiconductor pressure sensor with steep passageway - Google Patents
Multi semiconductor pressure sensor with steep passagewayInfo
- Publication number
- AU2446401A AU2446401A AU24464/01A AU2446401A AU2446401A AU 2446401 A AU2446401 A AU 2446401A AU 24464/01 A AU24464/01 A AU 24464/01A AU 2446401 A AU2446401 A AU 2446401A AU 2446401 A AU2446401 A AU 2446401A
- Authority
- AU
- Australia
- Prior art keywords
- steep
- passageway
- pressure sensor
- semiconductor pressure
- multi semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46842099A | 1999-12-20 | 1999-12-20 | |
US09468420 | 1999-12-20 | ||
PCT/US2000/034781 WO2001046665A1 (en) | 1999-12-20 | 2000-12-20 | Multivariate semiconductor pressure sensor with passageway |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2446401A true AU2446401A (en) | 2001-07-03 |
Family
ID=23859741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU24464/01A Abandoned AU2446401A (en) | 1999-12-20 | 2000-12-20 | Multi semiconductor pressure sensor with steep passageway |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2446401A (en) |
WO (1) | WO2001046665A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6790699B2 (en) | 2002-07-10 | 2004-09-14 | Robert Bosch Gmbh | Method for manufacturing a semiconductor device |
US10221062B2 (en) * | 2016-10-03 | 2019-03-05 | Continental Automotive Systems, Inc. | Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity |
CN108254031B (en) * | 2017-12-28 | 2020-07-10 | 上海工程技术大学 | Differential pressure type gas micro-flow sensor and manufacturing method thereof |
EP3654005B1 (en) * | 2018-11-15 | 2022-05-11 | TE Connectivity Solutions GmbH | Differential pressure sensor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4975390A (en) * | 1986-12-18 | 1990-12-04 | Nippondenso Co. Ltd. | Method of fabricating a semiconductor pressure sensor |
US5969591A (en) * | 1991-03-28 | 1999-10-19 | The Foxboro Company | Single-sided differential pressure sensor |
US5220838A (en) * | 1991-03-28 | 1993-06-22 | The Foxboro Company | Overpressure-protected, differential pressure sensor and method of making the same |
US5632854A (en) * | 1995-08-21 | 1997-05-27 | Motorola, Inc. | Pressure sensor method of fabrication |
EP0890998A1 (en) * | 1997-07-07 | 1999-01-13 | STMicroelectronics S.r.l. | Manufacturing method and integrated piezoresistive pressure sensor having a diaphragm of polycristalline semiconductor material |
-
2000
- 2000-12-20 WO PCT/US2000/034781 patent/WO2001046665A1/en active Application Filing
- 2000-12-20 AU AU24464/01A patent/AU2446401A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2001046665A9 (en) | 2002-07-25 |
WO2001046665A8 (en) | 2001-10-11 |
WO2001046665A1 (en) | 2001-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |