WO2001043278A1 - Amplificateur d'adaptation d'impedance a faible distorsion faisant intervenir une technique de suppression de distorsion - Google Patents

Amplificateur d'adaptation d'impedance a faible distorsion faisant intervenir une technique de suppression de distorsion Download PDF

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Publication number
WO2001043278A1
WO2001043278A1 PCT/US2000/033016 US0033016W WO0143278A1 WO 2001043278 A1 WO2001043278 A1 WO 2001043278A1 US 0033016 W US0033016 W US 0033016W WO 0143278 A1 WO0143278 A1 WO 0143278A1
Authority
WO
WIPO (PCT)
Prior art keywords
stage
amplifier
transistor
output
distortion
Prior art date
Application number
PCT/US2000/033016
Other languages
English (en)
Inventor
Shutong Zhou
Richard A. Meier
Original Assignee
General Instrument Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corporation filed Critical General Instrument Corporation
Priority to AU18168/01A priority Critical patent/AU1816801A/en
Publication of WO2001043278A1 publication Critical patent/WO2001043278A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's

Definitions

  • This invention is related to optical receivers and more particularly to a front
  • Optical receivers are typically utilized in communication systems for receiving
  • optical signals and transforming them into electrical signals.
  • electrical signals The electrical signals
  • CATV network a CATV network
  • a CATV network typically consists of a downstream path extending from a
  • the upstream path typically
  • systems can be designed to be partially optical and partially electrical.
  • partially optical and partially electrical For example,
  • downstream directions can be accomplished utilizing optical signals while
  • optical receivers to be located at both the nodes
  • Optical receivers are necessary at each node for receiving optical signals in
  • optical receivers are necessary at the head end to receive optical communications
  • Transimpedance amplifiers have been widely used in optical digital receivers.
  • EINC Equivalent Input Noise Current
  • the second order distortions can be much lower than the
  • the invention addresses the above mentioned problem by providing a method
  • a transimpedance amplifier having a first input stage, a voltage amplifier
  • FIG. 1 is a block diagram of the transimpedance amplifier according to the
  • Figure 2 is an exemplary schematic of an implementation of the block
  • Figure 3 shows waveforms (including second order distortion waveforms)
  • Figure 4 shows a graph of negative bias voltage vs. second order distortion
  • the transimpedance amplifier 10 consists of four major components. First, an
  • optical input 15 is received into an optical to electrical transducer 20.
  • the optical to electrical transducer 20 is a low voltage signal supplied into the input
  • stage 30 which serves to convert this low voltage signal to a current signal.
  • voltage amplifier stage 40 receives the current signal, amplifies it, and feeds it into
  • an emitter follower stage 50 By design, the emitter follower stage 50 also creates
  • a feedback 60 flows from the
  • An optical signal 15 is supplied to photo diode PD.
  • the photo diode PD is negative biased and
  • the input stage 30 consists of transistor Q l3 resistors R,, R 2 and R 6 and
  • the transistor Q is preferably a GaAs MESFET. It should
  • the gate of the transistor Q is connected to the
  • the voltage amplifier stage 40 consists of transistor Q 2 , and resistors R s , R 7
  • the transistor Q 2 is preferably a P-N-P BJT. It should be
  • the output of the transistor Qj goes to the emitter of the transistor Q 2 through resistor Rg and capacitor C ⁇ 0 .
  • resistors R 3 , R 4 , R 16 and capacitor C 3 are connected to a voltage source 35 through resistors R 3 , R 4 , R 16 and capacitor C 3 .
  • Resistors R 2 , Rg, R 16 and R 8 are small value resistors used to prevent unwanted high
  • the emitter follower stage 50 consists of transistor Q 3 , resistors R 8 , R 9 , R n
  • the transistor Q 3 is a N-P-N BJT.
  • the transistor Q 3 is connected to the voltage source 35.
  • the emitter supplies a signal
  • the feedback loop 60 consists of
  • Resistor R 12 is connected to the gate of the transistor Q j .
  • Resistor R 7 is
  • Resistor R ⁇ is connected between emitter of Q 3 and the negative bias
  • An optional optical power monitor may
  • resistor R 13 or R ⁇ .
  • the photodiode PD supplies
  • This signal S 0 is usually a low voltage broadband radio frequency (RF) signal
  • the transistor Q converts this voltage signal S 0 to a current signal I j
  • the output of the transistor Q 2 collector is an amplified signal
  • the signal S 2 is supplied to the transistor Q 3 at its base.
  • the transistor Q 3 also serves as a signal S 2 and
  • S 3d must be controlled to match the amplitude of distortion signal in S 2d in order to
  • distortion cancellation methodology can be further explained mathematically by first estimating the distortion produced in the transistor Q t and then determining the
  • V gs is the voltage between gate and source.
  • V p is the
  • the output voltage of the emitter follower is basically equal to the output
  • stage 40 is given by:
  • V 2 - g M R,V m (Eq. 2)
  • the output voltage on the transistor Q 2 collector will be:
  • the voltage on the output transistor Q 2 will be:
  • V 2 - CR 7 1 - V... (Eq. 5)
  • A is the amplification of the voltage amplifier stage.
  • V p is 1.3V.
  • V dc is 0.6V.
  • V 3 is approximately 0.8 volts (peak value).
  • the second order distortion created by GaAs MESFET transistor Q can be any suitable second order distortion created by GaAs MESFET transistor Q.
  • the emitter follower second order distortion comes from the internal emitter
  • I e is the emitter follower stage emitter current in milliamps.
  • emitter current can be an instant current.
  • emitter follower has lower output
  • the I e swing can be large at large RF output. This I e current swing
  • the first stage MESFET transistor Qj is a current square device. In the first
  • emitter follower transistor Q 3 is the other second order distortion generator.
  • stage 30 to become larger.
  • the GaAs MESFET transistor Q will generate more
  • Figure 4 shows the experimental second order distortion data versus negative

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Cette invention concerne un amplificateur d'adaptation d'impédance et une méthode permettant de réduire des distorsions de second ordre générées à l'intérieur de l'amplificateur dans une gamme de niveaux de puissance optique. L'amplificateur comporte un transducteur optico-électrique, un amplificateur d'entrée à étage, un amplificateur de tension et un émetteur suiveur. Cet émetteur suiveur produit également un signal de suppression de distorsion destiné à supprimer les distorsions de second ordre produites par l'amplificateur d'entrée à étage.
PCT/US2000/033016 1999-12-10 2000-12-06 Amplificateur d'adaptation d'impedance a faible distorsion faisant intervenir une technique de suppression de distorsion WO2001043278A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU18168/01A AU1816801A (en) 1999-12-10 2000-12-06 Low distortion transimpedance amplifier using distortion cancellation technique

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US17012799P 1999-12-10 1999-12-10
US60/170,127 1999-12-10
US53306400A 2000-03-22 2000-03-22
US09/533,064 2000-03-22

Publications (1)

Publication Number Publication Date
WO2001043278A1 true WO2001043278A1 (fr) 2001-06-14

Family

ID=26865734

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/033016 WO2001043278A1 (fr) 1999-12-10 2000-12-06 Amplificateur d'adaptation d'impedance a faible distorsion faisant intervenir une technique de suppression de distorsion

Country Status (3)

Country Link
AU (1) AU1816801A (fr)
TW (1) TW472441B (fr)
WO (1) WO2001043278A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1732209A1 (fr) * 2005-06-09 2006-12-13 Emcore Corporation Suppression de la distorsion dans un circuit amplificateur à transimpédance
US7596326B2 (en) 2005-10-27 2009-09-29 Emcore Corporation Distortion cancellation circuitry for optical receivers
US7634198B2 (en) 2006-06-21 2009-12-15 Emcore Corporation In-line distortion cancellation circuits for linearization of electronic and optical signals with phase and frequency adjustment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338024A1 (de) * 1983-10-20 1985-05-02 Standard Elektrik Lorenz Ag, 7000 Stuttgart Verstaerker mit strom-spannungswandlung, insbesondere vorverstaerker eines optischen empfaengers
GB2164515A (en) * 1984-09-13 1986-03-19 American Telephone & Telegraph Improvements in or relating to optical receivers
US4882482A (en) * 1988-10-26 1989-11-21 Tektronix, Inc. Thermally stabilized optical preamplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3338024A1 (de) * 1983-10-20 1985-05-02 Standard Elektrik Lorenz Ag, 7000 Stuttgart Verstaerker mit strom-spannungswandlung, insbesondere vorverstaerker eines optischen empfaengers
GB2164515A (en) * 1984-09-13 1986-03-19 American Telephone & Telegraph Improvements in or relating to optical receivers
US4882482A (en) * 1988-10-26 1989-11-21 Tektronix, Inc. Thermally stabilized optical preamplifier

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOBAYASHI K W ET AL: "A NOVEL MONOLITHIC LINEARIZED HEMT LNA USING HBT TUNEABLE ACTIVE FEEDBACK", IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST,US,NEW YORK, IEEE, 17 June 1996 (1996-06-17), pages 1217 - 1220, XP000720569, ISBN: 0-7803-3247-4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1732209A1 (fr) * 2005-06-09 2006-12-13 Emcore Corporation Suppression de la distorsion dans un circuit amplificateur à transimpédance
US7596326B2 (en) 2005-10-27 2009-09-29 Emcore Corporation Distortion cancellation circuitry for optical receivers
US7634198B2 (en) 2006-06-21 2009-12-15 Emcore Corporation In-line distortion cancellation circuits for linearization of electronic and optical signals with phase and frequency adjustment

Also Published As

Publication number Publication date
AU1816801A (en) 2001-06-18
TW472441B (en) 2002-01-11

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