WO2001041946A1 - Cleaning of material surfaces using gas - Google Patents

Cleaning of material surfaces using gas Download PDF

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Publication number
WO2001041946A1
WO2001041946A1 PCT/EP2000/011669 EP0011669W WO0141946A1 WO 2001041946 A1 WO2001041946 A1 WO 2001041946A1 EP 0011669 W EP0011669 W EP 0011669W WO 0141946 A1 WO0141946 A1 WO 0141946A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
gas
chamber
water
cleaned
Prior art date
Application number
PCT/EP2000/011669
Other languages
German (de)
French (fr)
Inventor
Manfred Eschwey
Edmund Burte
Joerg Vierhaus
Original Assignee
Messer Griesheim Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messer Griesheim Gmbh filed Critical Messer Griesheim Gmbh
Publication of WO2001041946A1 publication Critical patent/WO2001041946A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the invention relates to a device and a method for cleaning material surfaces.
  • Material surfaces are made by using liquid acids and alkalis, e.g. B. with the addition of hydrogen peroxide, cleaned and then rinsed with water to achieve a pH-neutral surface.
  • Water is an essential component of the chemicals supplied, but is available in every manufacturing plant and is transported with it. In order to supply the systems using the chemicals, complex supply systems with double-walled pipelines and supply systems are often required.
  • a method for wet cleaning of semiconductor surfaces is described, for example, in WO 96/39651.
  • WO 92/16306 describes the on-site production of cleaning liquids with gaseous raw materials for cleaning semiconductor surfaces.
  • the invention has for its object to provide a simpler method for cleaning material or surfaces, which manages with a simplified supply system.
  • the object was achieved by a device having the features described in claim 1 and a method having the features described in claim 3.
  • acids and bases of the usual wet chemical cleaning process are replaced by gases which, together with the moisture present or generated, form the corresponding acids or bases on the material surface.
  • the process is suitable for cleaning material surfaces with anionic, cationic and organic contaminants as well as particles.
  • the cleaning reagent is created by exposure to one or more gases in a humid atmosphere. Cleaning takes place with or without the effect of sprayed or splashed water.
  • the treatment with water is carried out in any time sequence, preferably supported with ultrasound or megasound.
  • the treatment with water takes place with or without the action of oxidizing agents such as ozone or hydrogen peroxide and complexing agents.
  • the process saves z. B. in the semiconductor industry parts of the infrastructure of the chemical supply, since acids, such as hydrochloric acid and hydrofluoric acid, and alkalis, such as ammonia solution, can be replaced by the use of HCI, HF and NH 3 gases, which are available anyway with a distribution system , The same applies to a water supply system.
  • the necessary transports in the supply chain are significantly reduced because the gases are delivered in a highly concentrated form without the existing water.
  • the saving of transport and transfer processes also leads to an increase in chemical quality in terms of particles, anionic, cationic and organic contaminants that can be achieved with less effort.
  • chemical changes in the composition, the mixing ratio, the concentration or other properties that can influence the quality criteria to be observed can be reduced.
  • the surface of the material to be cleaned is treated with the gases in a chamber if residual moisture is present or generated.
  • One or more gases are introduced into the chamber, which act on the material surface because the moisture in the chamber atmosphere at the location of the surface is the reagent, for example the desired acid or alkali.
  • the surface can be sprayed, swelled or immersed in water, in particular ultrapure water, in any time sequence in order to remove reaction products.
  • the water can be activated by sound transducers, heating or other devices. Additional auxiliaries such as hydrogen peroxide, ozone, complexing agents or others can also be added.
  • the moisture in the chamber atmosphere (“atmospheric moisture”) to initiate the etching process is advantageously generated by spraying in ultrapure water, by using the residual moisture contained in the chamber or by passing an auxiliary gas such as nitrogen through a wash bottle containing ultrapure water.
  • the chamber itself and all parts in contact with the media are made of durable plastics such as Perfluoroethylene executed.
  • the process is carried out, for example, at a temperature in the chamber in the range from 10 to 150 ° C., preferably 30 to 80 ° C., in particular 50 to 70 ° C., at a pressure of generally 1 bar (absolute).
  • the process can also be done under negative pressure, e.g. B. 0.2 to below 1 bar, or at excess pressure, for. B. 1, 2 to 10 bar.
  • the method is particularly advantageously carried out in such a way that a mist is formed in the chamber.
  • gas in particular the reactive gas
  • gas dissolves in the mist droplets, which react with the surface of the items to be cleaned.
  • the fog can e.g. by atomizing ultrapure water using an ultrasonic atomizer.
  • the material surface of the items to be cleaned is heated, heated or treated with ultrasound during cleaning.
  • the material surface and the cleaning reagent that forms are activated by ultrasound treatment, as a result of which dirt is removed from the material surface more easily and efficiently.
  • Some ultrasound treatment is also carried out during the rinsing of the material surface, e.g. B. in one of several rinsing steps.
  • the method according to the invention uses cleaning reagent very sparingly, as a result of which reagent consumption, in particular gas consumption, and quantity of waste water are reduced.
  • Fig. 1 shows schematically a chamber with gas and water supply for performing the method according to the invention.
  • a UV lamp 6 is generally arranged on the top of the chamber 1.
  • the chamber is connected to a water supply line 8 (for example for deionized water or ultrapure water) and the gas supply 9.
  • the gas supply 9 serves to supply one or more gases or gas mixtures (reactive gases) into the chamber 1.
  • the chamber also contains one Drain pipe 10 for wash water (drain for waste water).
  • Chamber 1 optionally contains an exhaust air duct or exhaust air duct 11.
  • the dashed arrows above the items to be cleaned indicate spray mist.
  • the items 2 to be cleaned are cleaned with the material surface to be cleaned, e.g. B. brought a wafer into the chamber 1.
  • the wafer is held in position by the holder 3.
  • a high air humidity is generated by evaporating or spraying water.
  • the chamber moisture is advantageously generated by means of the spray chamber 4 in conjunction with the heater 7.
  • the gases concerned are passed into the moisture-saturated chamber 1.
  • the material surface of items 2 to be cleaned is generally cleaned and rinsed by water treatment.
  • the surface is treated with water, for example by spraying. Reaction products are removed with the water treatment.
  • Treatment gases are, for example, hydrogen fluoride gas or hydrogen chloride gas, which are introduced into the chamber for a limited time.
  • hydrofluoric acid or hydrochloric acid forms on the surfaces, which act on the silicon surface of a wafer in a known manner and clean it. This effect can be significantly increased by adding ozone to the cleaning gas.
  • Ultrapure water e.g. distilled water
  • the chamber is then flushed with nitrogen, the wafer is removed and dried.

Abstract

The invention relates to a device for cleaning material surfaces, in particular semiconductor surfaces. Said device is equipped with a cleaning chamber (1), a fixing device (3) for the item to be cleaned, a spray chamber (4) containing an ultrasonic or megasonic generator (5) and a water supply line (8), at least one supply line for a reactive gas and an outflow (10). A preferred embodiment of the device contains a UV lamp (6) and/or a heating element (7). According to said method for cleaning material surfaces, the material surface is brought into contact with a gas or gaseous mixture under an atmospheric humidity of more than 80 % at a temperature ranging between 10 and 150 °C.

Description

REINIGUNG VON MATERIALOBERFLÄCHEN MIT GASEN CLEANING MATERIAL SURFACES WITH GASES
Die Erfindung betrifft eine Vorrichtung und ein Verfahren zur Reinigung von Materialoberflächen.The invention relates to a device and a method for cleaning material surfaces.
Materialoberflächen, insbesondere in der Halbleiterindustrie, werden durch Einsatz von flüssigen Säuren und Laugen, auch z. B. unter Zugabe von Wasserstoffperoxid, gereinigt und anschließend mit Wasser gespült, um eine pH-Wert neutrale Oberfläche zu erzielen. Das Spülen mit entionisiertem oder destilliertem Wasser, auch unter Zugabe von Ozon oder Wasserstoffperoxid, dient dabei auch der Konditionierung der Oberfläche, um eine erneute Kontamination zu erschweren. Ein wesentlicher Bestandteil der angelieferten Chemikalien ist Wasser, das aber in jedem Fertigungsbetrieb verfügbar ist und mit transportiert wird. Für die Versorgung der die Chemikalien verbrauchenden Anlagen sind oft aufwendige Versorgungssysteme vorzusehen mit doppelwandigen Rohrleitungen und Versorgungsanlagen.Material surfaces, especially in the semiconductor industry, are made by using liquid acids and alkalis, e.g. B. with the addition of hydrogen peroxide, cleaned and then rinsed with water to achieve a pH-neutral surface. Rinsing with deionized or distilled water, also with the addition of ozone or hydrogen peroxide, also serves to condition the surface in order to make recontamination more difficult. Water is an essential component of the chemicals supplied, but is available in every manufacturing plant and is transported with it. In order to supply the systems using the chemicals, complex supply systems with double-walled pipelines and supply systems are often required.
Ein Verfahren zur Naßreinigung von Halbleiteroberflächen ist beispielsweise beschrieben in WO 96/39651.A method for wet cleaning of semiconductor surfaces is described, for example, in WO 96/39651.
In WO 92/16306 wird die on site-Herstellung von Reinigungsflüssigkeiten mit gasförmigen Rohmaterialien für die Reinigung von Halbleiteroberflächen beschrieben.WO 92/16306 describes the on-site production of cleaning liquids with gaseous raw materials for cleaning semiconductor surfaces.
Der Erfindung liegt die Aufgabe zugrunde, ein einfacheres Verfahren zur Reinigung von Material oder Flächen bereit zu stellen, das mit einer vereinfachten Versorgungsanlage auskommt.The invention has for its object to provide a simpler method for cleaning material or surfaces, which manages with a simplified supply system.
Gelöst wurde die Aufgabe durch eine Vorrichtung mit den in Anspruch 1 und ein Verfahren mit den in Anspruch 3 beschriebenen Merkmalen. Bei dem Verfahren gemäß der Erfindung werden Säuren und Laugen des üblichen naßchemischen Reinigungsprozesses durch Gase ersetzt, die zusammen mit vorhandener oder erzeugter Feuchtigkeit, die entsprechenden Säuren oder Laugen auf der Materialoberfläche bilden. Das Verfahren eignet sich zur Reinigung von Materialober- flächen mit anionischen, kationischen und organischen Verunreinigungen sowie Partikeln. Das Reinigungsreagenz entsteht durch Einwirkung eines oder mehrerer Gase in feuchter Atmosphäre. Die Reinigung erfolgt mit oder ohne Einwirkung von gesprühtem oder geschwalltem Wasser. Die Behandlung mit Wasser erfolgt in beliebiger zeitlicher Abfolge, vorzugsweise mit Ultra- oder Megaschall unterstützt. Die Behandlung mit Wasser erfolgt mit oder ohne Einwirkung von Oxidationsmitteln, wie Ozon oder Wasserstoffperoxid und Komplexbildnern.The object was achieved by a device having the features described in claim 1 and a method having the features described in claim 3. In the method according to the invention, acids and bases of the usual wet chemical cleaning process are replaced by gases which, together with the moisture present or generated, form the corresponding acids or bases on the material surface. The process is suitable for cleaning material surfaces with anionic, cationic and organic contaminants as well as particles. The cleaning reagent is created by exposure to one or more gases in a humid atmosphere. Cleaning takes place with or without the effect of sprayed or splashed water. The treatment with water is carried out in any time sequence, preferably supported with ultrasound or megasound. The treatment with water takes place with or without the action of oxidizing agents such as ozone or hydrogen peroxide and complexing agents.
Das Verfahren erspart z. B. in der Halbleiterindustrie Teile der Infrastruktur der Chemikalienversorgung, da Säuren, wie Salzsäure und Flußsäure, und Laugen, wie Amoni- aklösung, ersetzt werden können durch die Anwendung von HCI, HF und NH3-Gasen, die sowieso mit einem Verteilungssystem vorhanden sind. Das gleiche gilt für ein Was- serversorgungssystem. Gleichzeitig werden in der Versorgungskette die notwendigen Transporte deutlich vermindert, da die Gase in hochkonzentrierter Form ohne das vorhandene Wasser angeliefert werden. Neben der Einsparung an Resourcen und Infra- Struktur führt die Einsparung von Transport- und Umfüllvorgängen auch zu einer mit geringerem Aufwand erreichbaren Erhöhung der Chemikalienqualität hinsichtlich Partikel, anionischer, kationischer und organischer Verunreinigungen. Außerdem können bei Chemikalien auftretende Veränderungen der Zusammensetzung, des Mischungsverhältnisses, der Konzentration oder sonstiger Eigenschaften, die einzuhaltende Qua- litätskriterien beeinflussen können, verringert werden.The process saves z. B. in the semiconductor industry parts of the infrastructure of the chemical supply, since acids, such as hydrochloric acid and hydrofluoric acid, and alkalis, such as ammonia solution, can be replaced by the use of HCI, HF and NH 3 gases, which are available anyway with a distribution system , The same applies to a water supply system. At the same time, the necessary transports in the supply chain are significantly reduced because the gases are delivered in a highly concentrated form without the existing water. In addition to the saving of resources and infrastructure, the saving of transport and transfer processes also leads to an increase in chemical quality in terms of particles, anionic, cationic and organic contaminants that can be achieved with less effort. In addition, chemical changes in the composition, the mixing ratio, the concentration or other properties that can influence the quality criteria to be observed can be reduced.
In der Regel wird die zu reinigende Materialoberfläche in einer Kammer bei vorhandener oder erzeugter Restfeuchtigkeit mit den Gasen behandelt. Ein oder mehrere Gase werden in die Kammer eingeleitet, die auf die Materialoberfläche einwirken, weil die Feuchtigkeit der Kammeratmosphäre am Ort der Oberfläche das Reagenz, z.B. die ge- wünschte Säure oder Lauge, bildet. In beliebiger zeitlicher Abfolge kann die Oberfläche mit Wasser, insbesondere Reinstwasser besprüht, beschwallt oder getaucht werden um Reaktionsprodukte zu entfernen. Das Wasser kann durch Schallwandler, Heizung oder andere Vorrichtungen aktiviert werden. Zusätzlich können weitere Hilfsstoffe wie Was- serstoffperoxid, Ozon, Komplexbildner oder andere beigefügt werden.As a rule, the surface of the material to be cleaned is treated with the gases in a chamber if residual moisture is present or generated. One or more gases are introduced into the chamber, which act on the material surface because the moisture in the chamber atmosphere at the location of the surface is the reagent, for example the desired acid or alkali. The surface can be sprayed, swelled or immersed in water, in particular ultrapure water, in any time sequence in order to remove reaction products. The water can be activated by sound transducers, heating or other devices. Additional auxiliaries such as hydrogen peroxide, ozone, complexing agents or others can also be added.
Die Feuchtigkeit der Kammeratmosphäre ("Luftfeuchtigkeit") zur Iniziierung des Ätzvorganges wird vorteilhaft durch Einsprühen von Reinstwasser, durch Verwenden der in der Kammer enthaltenen Restfeuchte oder durch Durchleiten eines Hilfsgases wie Stickstoff durch eine Reinstwasser enthaltende Waschflasche erzeugt.The moisture in the chamber atmosphere (“atmospheric moisture”) to initiate the etching process is advantageously generated by spraying in ultrapure water, by using the residual moisture contained in the chamber or by passing an auxiliary gas such as nitrogen through a wash bottle containing ultrapure water.
Die Kammer selbst sowie alle Medien berührenden Teile werden aus beständigen Kunststoffen wie z.B. Perfluoräthylen ausgeführt.The chamber itself and all parts in contact with the media are made of durable plastics such as Perfluoroethylene executed.
Das Verfahren wird beispielsweise bei einer Temperatur in der Kammer im Bereich von 10 bis 150° C, vorzugsweise 30 bis 80° C, insbesondere 50 bis 70° C, bei einem Druck von in der Regel 1 bar (absolut) durchgeführt. Das Verfahren kann auch bei Unterdruck, z. B. 0,2 bis unter 1 bar, oder bei Überdruck, z. B. 1 ,2 bis 10 bar durchgeführt werden.The process is carried out, for example, at a temperature in the chamber in the range from 10 to 150 ° C., preferably 30 to 80 ° C., in particular 50 to 70 ° C., at a pressure of generally 1 bar (absolute). The process can also be done under negative pressure, e.g. B. 0.2 to below 1 bar, or at excess pressure, for. B. 1, 2 to 10 bar.
Besonders vorteilhaft wird das Verfahren so ausgeführt, daß in der Kammer ein Nebel gebildet wird. Bei Einleitung des Gases, insbesondere des Reaktivgases, löst sich Gas in den Nebeltröpfchen, die mit der Oberfläche des Reinigungsgutes reagieren. Der Nebel läßt sich z.B. durch Zerstäuben von Reinstwassers mittels eines Ultraschalizerstäu- ber erzeugen.The method is particularly advantageously carried out in such a way that a mist is formed in the chamber. When the gas, in particular the reactive gas, is introduced, gas dissolves in the mist droplets, which react with the surface of the items to be cleaned. The fog can e.g. by atomizing ultrapure water using an ultrasonic atomizer.
Eine besonders gute Reinigung wird erzielt, wenn die Materialoberfläche des Reinigungsgutes während der Reinigung erwärmt, erhitzt oder mit Ultraschall behandelt wird. Beispielsweise wird die Materialoberfläche und das sich bildende Reinigungsreagenz (Gas/Luftfeuchte oder Gas/Nebel) durch Ultraschallbehandlung aktiviert, wodurch Verschmutzungen leichter und effizienter von der Materialoberfläche entfernt werden. Vor- teilhaft erfolgt eine Ultraschallbehandlung auch während des Spülens der Materialoberfläche, z. B. in einem von mehreren Spülschritten.Particularly good cleaning is achieved if the material surface of the items to be cleaned is heated, heated or treated with ultrasound during cleaning. For example, the material surface and the cleaning reagent that forms (gas / air humidity or gas / mist) are activated by ultrasound treatment, as a result of which dirt is removed from the material surface more easily and efficiently. In front- Some ultrasound treatment is also carried out during the rinsing of the material surface, e.g. B. in one of several rinsing steps.
Durch das Verfahren gemäß der Erfindung wird als weiterer bedeutender Vorteil Reini- gungsreagenz sehr sparsam eingesetzt, wodurch Reagenzverbrauch, insbesondere Gasverbrauch, und Abwassermenge reduziert wird.As a further important advantage, the method according to the invention uses cleaning reagent very sparingly, as a result of which reagent consumption, in particular gas consumption, and quantity of waste water are reduced.
Die Erfindung wird an Hand der Zeichnung erläutert.The invention is explained with reference to the drawing.
Fig. 1 zeigt schematisch eine Kammer mit Gas- und Wasserversorgung zur Durchführung des Verfahrens gemäß der Erfindung.Fig. 1 shows schematically a chamber with gas and water supply for performing the method according to the invention.
Fig. 1 zeigt eine Kammer 1 , ein Reinigungsgut (Wafer) 2 in der Haiterung 3 (Chuck), eine Sprühkammer 4 mit Ultraschallgeber 5. An der Oberseite der Kammer 1 ist in der Regel eine UV-Lampe 6 angeordnet. Unterhalb der Kammer 1 befindet sich eine Heizung 7 (z. B. Lampenheizung). Die Kammer ist verbunden mit einer Wasserzuleitung 8 (z. B. für deionisiertes Wasser oder Reinstwasser) und der Gasversorgung 9. Die Gasversorgung 9 dient zur Zuleitung eines oder mehrerer Gase oder Gasgemische (reaktive Gase) in die Kammer 1. Die Kammer enthält außerdem eine Ablaufleitung 10 für Waschwasser (Abfluß für Abwasser). Die Kammer 1 enthält gegebenenfalls eine Ab- luftleitung oder Abluftkanal 11. Die gestrichelten Pfeile oberhalb des Reinigungsgutes deuten Sprühnebel an.1 shows a chamber 1, a cleaning material (wafer) 2 in the holder 3 (chuck), a spray chamber 4 with an ultrasound transmitter 5. A UV lamp 6 is generally arranged on the top of the chamber 1. There is a heater 7 below the chamber 1 (e.g. lamp heater). The chamber is connected to a water supply line 8 (for example for deionized water or ultrapure water) and the gas supply 9. The gas supply 9 serves to supply one or more gases or gas mixtures (reactive gases) into the chamber 1. The chamber also contains one Drain pipe 10 for wash water (drain for waste water). Chamber 1 optionally contains an exhaust air duct or exhaust air duct 11. The dashed arrows above the items to be cleaned indicate spray mist.
Zur Durchführung des Verfahrens wird das Reinigungsgut 2 mit der zu reinigenden Materialoberfläche, z. B. ein Wafer in die Kammer 1 gebracht. Der Wafer wird von der Haiterung 3 in Position gehalten.To carry out the method, the items 2 to be cleaned are cleaned with the material surface to be cleaned, e.g. B. brought a wafer into the chamber 1. The wafer is held in position by the holder 3.
In der Kammer 1 wird eine hohe Luftfeuchtigkeit durch Verdampfen oder Versprühen von Wasser erzeugt. Die Erzeugung der Kammerfeuchtigkeit erfolgt vorteilhaft mittels der Sprühkammer 4 in Verbindung mit der Heizung 7. Es wird eine Luftfeuchtigkeit von beispielsweise 99 % erzeugt, bei einer Temperatur von beispielsweise 60°. In die feuchtigkeitsgesättigte Kammer 1 werden je nach Reinigungsschritt die betreffenden Gase geleitet. Nach dem Behandlungsschritt mit dem Reinigungsgas wird die Materialoberfläche von Reinigungsgut 2 in der Regel durch Wasserbehandlung nachgereinigt und gespült. Die Behandlung der Oberfläche mit Wasser erfolgt beispielsweise durch Besprühen. Mit der Wasserbehandlung werden Reaktionsprodukte entfernt. Behandlungsgase (Reaktivgase) sind z.B. Fluorwasserstoffgas oder Chlorwasserstoffgas, die zeitlich begrenzt in die Kammer eingeleitet werden. Durch die vorhandene Luftfeuchtigkeit bildet sich an den Oberflächen Flußsäure oder Salzsäure, die in bekannter Weise auf die Siliziumoberfläche eines Wafers einwirken und diese reinigen. Diese Wirkung kann durch die Zugabe von Ozon zu dem Reinigungsgas deutlich gesteigert werden. Reinstwasser (z. B. destilliertes Wasser) wird nun, z. B. unterstützt durch Megaschall, auf die Oberfläche gesprüht, um Reaktionsfolgeprodukte und Partikel abzuspülen. Danach wird die Kammer mit Stickstoff gespült, die Wafer-Scheibe entnommen und ge- trocknet.In the chamber 1, a high air humidity is generated by evaporating or spraying water. The chamber moisture is advantageously generated by means of the spray chamber 4 in conjunction with the heater 7. An air humidity of for example 99% generated at a temperature of for example 60 °. Depending on the cleaning step, the gases concerned are passed into the moisture-saturated chamber 1. After the treatment step with the cleaning gas, the material surface of items 2 to be cleaned is generally cleaned and rinsed by water treatment. The surface is treated with water, for example by spraying. Reaction products are removed with the water treatment. Treatment gases (reactive gases) are, for example, hydrogen fluoride gas or hydrogen chloride gas, which are introduced into the chamber for a limited time. Due to the air humidity present, hydrofluoric acid or hydrochloric acid forms on the surfaces, which act on the silicon surface of a wafer in a known manner and clean it. This effect can be significantly increased by adding ozone to the cleaning gas. Ultrapure water (e.g. distilled water) is now, e.g. B. supported by megasound, sprayed onto the surface to rinse off reaction products and particles. The chamber is then flushed with nitrogen, the wafer is removed and dried.
Bezugszeichen:Reference numerals:
1 Reinigungskammer1 cleaning chamber
2 Reinigungsgut (Wafer)2 items to be cleaned (wafer)
3 Haiterung für Reinigungsgut (Chuck)3 Haiterung for cleaning goods (Chuck)
4 Sprühkammer4 spray chamber
5 Ultraschallgeber5 ultrasonic sensors
6 UV-Lampe6 UV lamp
7 Heizung7 heating
8 Wasserzuleitung8 water supply
9 Gaszuleitung9 gas supply line
10 Wasserablauf10 water drain
11 Abluftleitung 11 Exhaust duct

Claims

Patentansprüche claims
1. Vorrichtung zur Reinigung von Materialoberflächen mit einer Reinigungskammer (1). einer Haiterung (3) für das Reinigungsgut (2), einer Sprühkammer (4) mit Ultraschall- oder Megaschall-Erzeuger (5) und Wasserzuleitung (8), mindestens einer Zuleitung (9) für ein Reaktivgas und einem Abfluß (10).1. Device for cleaning material surfaces with a cleaning chamber (1). a holder (3) for the items to be cleaned (2), a spray chamber (4) with an ultrasound or megasound generator (5) and water supply line (8), at least one supply line (9) for a reactive gas and a drain (10).
2. Vorrichtung nach Anspruch 1 , dadurch gekennzeichnet, daß die Vorrichtung eine UV-Lampe (6) und/oder eine Heizung (7) enthält.2. Device according to claim 1, characterized in that the device contains a UV lamp (6) and / or a heater (7).
3. Verfahren zur Reinigung von Materialoberflächen, dadurch gekennzeichnet, daß die Materialoberfläche mit einem Gas- oder Gasgemisch bei einer Luftfeuchtigkeit von mehr als 80 % bei einer Temperatur im Bereich von 10 bis 150° C in Kontakt gebracht wird.3. A method for cleaning material surfaces, characterized in that the material surface is brought into contact with a gas or gas mixture at a humidity of more than 80% at a temperature in the range from 10 to 150 ° C.
4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, daß die Luftfeuchtigkeit mehr als 90 % beträgt.4. The method according to claim 3, characterized in that the air humidity is more than 90%.
5. Verfahren nach Anspruch 3 oder 4, dadurch gekennzeichnet, daß die Materialober- fläche mit einem Nebel in Kontakt gebracht wird.5. The method according to claim 3 or 4, characterized in that the material surface is brought into contact with a mist.
6. Verfahren nach einem der Ansprüche 3 bis 5, dadurch gekennzeichnet, daß das Gas ein Reaktivgas, insbesondere ein HF, HCI, NH3 oder 03 enthaltendes Gas, ist.6. The method according to any one of claims 3 to 5, characterized in that the gas is a reactive gas, in particular a gas containing HF, HCl, NH 3 or 0 3 .
7. Verfahren nach einem der Ansprüche 3 bis 6, dadurch gekennzeichnet, daß die Materialoberfläche während der Reinigung erwärmt, erhitzt oder mit Ultraschall behandelt wird. 7. The method according to any one of claims 3 to 6, characterized in that the material surface is heated, heated or treated with ultrasound during cleaning.
PCT/EP2000/011669 1999-12-10 2000-11-23 Cleaning of material surfaces using gas WO2001041946A1 (en)

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DE1999159558 DE19959558A1 (en) 1999-12-10 1999-12-10 Cleaning material surfaces with gases
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DE10162191A1 (en) * 2001-12-17 2003-06-18 Wolfgang Coenen Etching device used for etching precision surfaces in the semiconductor industry comprises a reaction chamber for receiving and processing a single object

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DE3713396A1 (en) * 1987-04-21 1988-11-10 Siemens Ag Process for cleaning vessels, pipeline systems and components
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