JPH01262627A - Washer for semiconductor substrate - Google Patents
Washer for semiconductor substrateInfo
- Publication number
- JPH01262627A JPH01262627A JP9207588A JP9207588A JPH01262627A JP H01262627 A JPH01262627 A JP H01262627A JP 9207588 A JP9207588 A JP 9207588A JP 9207588 A JP9207588 A JP 9207588A JP H01262627 A JPH01262627 A JP H01262627A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- semiconductor substrate
- gas
- cleaning
- ozone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims description 44
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 33
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 15
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 abstract description 23
- 239000010419 fine particle Substances 0.000 abstract description 11
- 238000011109 contamination Methods 0.000 abstract description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 11
- 239000007788 liquid Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板の洗浄装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor substrate cleaning apparatus.
従来、この種の洗浄装置としては、半導体基板を洗浄液
の中に浸漬し処理を行なうデイツプ式と呼ばれる洗浄装
置が主流となっていた。また、回転させた半導体基板に
霧状にした洗浄液を噴き付けるスプレー式や、洗浄液を
スピン塗布させるスピン式の洗浄装置も用いられていた
。Conventionally, the mainstream of this type of cleaning apparatus has been a so-called dip-type cleaning apparatus in which the semiconductor substrate is immersed in a cleaning liquid for processing. Additionally, spray-type cleaning devices that spray atomized cleaning liquid onto a rotated semiconductor substrate, and spin-type cleaning devices that spin-coat the cleaning liquid have also been used.
しかしながら、上述した従来のデイツプ式洗浄装置では
、半導体基板を直接洗浄液に浸漬し処理するため、洗浄
液中に不純物の微粒子が存在すると、この微粒子が半導
体基板表面に付着するという問題がある。そのため、処
理槽内の洗浄中の微粒子を除去するための循環濾過装置
が不可欠であるが、この循環−過装置によっても微粒子
の付着を完全には防ぐことができず、連続処理を行なう
と洗浄液中に微粒子が蓄積する。また、洗浄液が何らか
の原因によって汚染された場合、その汚染された洗浄液
で処理された半導体基板が全て汚染される。However, in the above-described conventional dip-type cleaning apparatus, since the semiconductor substrate is directly immersed in the cleaning liquid for processing, there is a problem that if fine particles of impurities are present in the cleaning liquid, these fine particles will adhere to the surface of the semiconductor substrate. Therefore, a circulation filtration device is essential to remove particulates during cleaning in the processing tank, but even this circulation filtration device cannot completely prevent the adhesion of particulates, and if continuous processing is performed, the cleaning fluid Particulates accumulate inside. Furthermore, if the cleaning liquid is contaminated for some reason, all semiconductor substrates processed with the contaminated cleaning liquid will be contaminated.
一方、スプレー式やスピン式洗浄装置では、洗浄液を１
バツチ毎に使い捨てにして使用しているため、微粒子の
蓄積による半導体表面への再付着は少ないという利点は
あるものの、やはり洗浄液が直接半導体基板に触れてい
るために、洗浄液が汚染された場合には処理された半導
体基板が汚染されることは、デイツプ式の場合と同じで
ある。On the other hand, spray-type or spin-type cleaning equipment uses only one cleaning solution.
Since the cleaning solution is used disposable after each batch, it has the advantage that there is less chance of particles accumulating and re-adhering to the semiconductor surface. As with the dip method, the processed semiconductor substrate is contaminated.
洗浄工程で半導体基板表面に付着した微粒子や汚染物質
は、それに続く半導体製造工程、即ち拡散・酸化、リソ
グラフィ等の各工程において悪影響を及ぼす。例えば、
拡散・酸化工程においては異常拡散の原因となったり、
酸化膜厚が不均一になったり、結晶欠陥を誘起する原因
となったりする。また、リソグラフィ工程ではパターン
欠陥の原因となったりする。このため、半導体素子の特
性を劣化させ、歩留りの低下１品質の低下を招くという
問題がある。Fine particles and contaminants that adhere to the surface of the semiconductor substrate during the cleaning process have an adverse effect on subsequent semiconductor manufacturing processes, such as diffusion, oxidation, and lithography. for example,
In the diffusion/oxidation process, it may cause abnormal diffusion,
This may cause the oxide film thickness to become non-uniform or induce crystal defects. Furthermore, it may cause pattern defects in the lithography process. Therefore, there is a problem in that the characteristics of the semiconductor element are deteriorated, leading to a decrease in yield and quality.
従来のスプレー式あるいはスピン式洗浄装置では洗浄液
を使い捨てにしているため、デイツプ式の場合と比較し
て薬品の使用量が増えるという問題もある。In conventional spray-type or spin-type cleaning devices, the cleaning liquid is disposable, so there is a problem in that the amount of chemicals used increases compared to the dip-type cleaning devices.
さらに、従来のデイツプ式、スプレー式およびスピン式
洗浄装置では、酸化剤として過酸化水素を用いているが
、洗浄液中の過酸化水素の分解によって洗浄液が劣化し
、洗浄能力も長時間持続しないという問題がある。また
、過酸化水素の分解によって生ずる気泡のため、洗浄液
が細部にまで行き渡らないという問題がある。特に、近
年半導体素子の集積度が増すにつれて、アスペクト比が
増加する傾向にあり、高アスペクト比でも確実に洗浄で
きることが要求されてきている。Furthermore, conventional dip-type, spray-type, and spin-type cleaning equipment uses hydrogen peroxide as an oxidizing agent, but the hydrogen peroxide in the cleaning solution deteriorates due to decomposition, and the cleaning performance does not last long. There's a problem. Furthermore, there is a problem in that the cleaning liquid does not reach every detail due to bubbles generated by the decomposition of hydrogen peroxide. In particular, as the degree of integration of semiconductor devices has increased in recent years, the aspect ratio has tended to increase, and it has become necessary to be able to reliably clean even high aspect ratios.
洗浄液の劣化を防ぐために、過酸化水素の代わりにオゾ
ン（Ｏ３）ガスを用いる方法もあるが、従来の洗浄装置
では洗浄液中にＯ３をバブリングによって供給している
ため、洗浄効果が不均一になりやすいという問題もあっ
た。In order to prevent deterioration of the cleaning solution, there is a method of using ozone (O3) gas instead of hydrogen peroxide, but in conventional cleaning equipment, O3 is supplied into the cleaning solution by bubbling, which results in uneven cleaning effects. There was also the problem that it was easy.
本発明の半導体基板の洗浄装置は、アンモニアまたは塩
酸または硝酸の蒸気を発生する蒸気発生部と、この発生
した蒸気中にオゾンガスを導入するガス導入部とを具備
するものである。The semiconductor substrate cleaning apparatus of the present invention includes a steam generation section that generates ammonia, hydrochloric acid, or nitric acid vapor, and a gas introduction section that introduces ozone gas into the generated vapor.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例を示す洗浄装置の模式断
面図である。FIG. 1 is a schematic sectional view of a cleaning device showing a first embodiment of the present invention.
第１図において、処理槽１の底部に、例えばアンモニア
（又は、塩酸あるいは硝酸）溶液２が供給されている。In FIG. 1, an ammonia (or hydrochloric acid or nitric acid) solution 2, for example, is supplied to the bottom of a processing tank 1.
このアンモニア溶液２をヒーター３で加熱することによ
ってアンモニア蒸気を発生させる。この場合、蒸気発生
部４はヒーター３によって構成されている０発生された
アンモニア蒸気中にオゾン・ガスがオゾン・ガス導入管
５によって導入される。オゾンはオゾン発生器６に供゛
給された酸素（Ｏ２）ガスの一部がオゾン発生器６でオ
ゾン化され、オゾン／酸素（Ｏ３１０２）の混合ガスと
して、フィルター７を通して導入される。この場合、ガ
ス導入部８は、オゾン発生器６．フィルター７およびオ
ゾン・ガス導入管５から構成される。By heating this ammonia solution 2 with a heater 3, ammonia vapor is generated. In this case, the steam generating section 4 is constituted by the heater 3, and ozone gas is introduced into the generated ammonia vapor through the ozone gas introduction pipe 5. A part of oxygen (O2) gas supplied to the ozone generator 6 is converted into ozone by the ozone generator 6, and the ozone is introduced through the filter 7 as a mixed gas of ozone/oxygen (O3102). In this case, the gas introduction section 8 is connected to the ozone generator 6. It is composed of a filter 7 and an ozone gas introduction pipe 5.
このようにしてオゾン・ガスが導入されたアンモニア蒸
気中に半導体基板９が晒され処理される。半導体基板９
はキャリア１０によって保持されている。アンモニア蒸
気は冷却器１１によって液化された後処理槽に戻され再
利用される。The semiconductor substrate 9 is exposed and processed in the ammonia vapor into which ozone gas has been introduced in this manner. semiconductor substrate 9
is held by a carrier 10. The ammonia vapor is liquefied by the cooler 11 and returned to the post-treatment tank for reuse.
このように本実施例においては、アンモニアを蒸気とし
て利用することにより、元の薬品中に微粒子や汚染物質
が存在していたとしても、半導体基板表面への付着を防
止することができ、また細部まで均一に洗浄することが
できる。In this example, by using ammonia in the form of vapor, even if fine particles or contaminants are present in the original chemical, it is possible to prevent them from adhering to the semiconductor substrate surface, and also to prevent fine particles or contaminants from adhering to the semiconductor substrate surface. It can be cleaned evenly.
水弟１の実施例では加熱に投げ込み式のヒーターを使用
しているが、処理槽外部から加熱する方式を用いてもよ
く、また赤外線加熱、ランプ加熱等による加熱方式を用
いることも可能である。In the example of Sui-Tei 1, an immersion type heater is used for heating, but it is also possible to use a method of heating from outside the processing tank, and it is also possible to use a heating method using infrared heating, lamp heating, etc. .
また、水弟１の実施例ではアンモニアを用いた場合につ
いて説明したが、塩酸や硝酸を用いても全く同様に半導
体基板を洗浄することができる。Further, in the embodiment of Mizuhiro 1, the case where ammonia is used has been described, but the semiconductor substrate can be cleaned in exactly the same manner using hydrochloric acid or nitric acid.
第２図は本発明の第２の実施例を示す洗浄装置の模式断
面図である。FIG. 2 is a schematic sectional view of a cleaning device showing a second embodiment of the present invention.
水弟２の実施例においては、アンモニア蒸気は水蒸気に
アンモニア・ガスを接触させることによって得ている。In the second embodiment, ammonia vapor is obtained by contacting ammonia gas with water vapor.
硝酸、塩酸蒸気は、二酸化窒素、塩化水素ガスを用いる
。水蒸気発生器２１で作られた水蒸気は蒸気発生器２２
に送られる。蒸気発生器２２において、アンモニア・ガ
ス（ＮＨ３）供装置２３よりフィルター７Ａを通して供
給されてきたアンモニア・ガスは水蒸気に吸収され、ア
ンモニア蒸気が生成する。生成されたアンモニア蒸気は
処理槽１に導入される。Nitrogen dioxide and hydrogen chloride gas are used as nitric acid and hydrochloric acid vapor. The steam generated by the steam generator 21 is transferred to the steam generator 22.
sent to. In the steam generator 22, the ammonia gas supplied from the ammonia gas (NH3) supply device 23 through the filter 7A is absorbed by water vapor, and ammonia vapor is generated. The generated ammonia vapor is introduced into the treatment tank 1.
処理槽１内には、酸素ガス供給装置２４からフィルター
７Ｂを通して酸素ガスが同時に導入される。この時、処
理槽１の側面に設置された紫外線光源２５より紫外線が
照射される。この紫外線の働きによって酸素ガスがオゾ
ン化される°。こうして、アンモニア蒸気とオゾンとの
混合雰囲気中で半導体基板９が処理される０本第２実施
例の場合においても半導体基板９はキャリア１０に保持
されているが、枚葉処理ももちろん可能である。Oxygen gas is simultaneously introduced into the processing tank 1 from the oxygen gas supply device 24 through the filter 7B. At this time, ultraviolet light is irradiated from the ultraviolet light source 25 installed on the side surface of the processing tank 1. The action of this ultraviolet light turns oxygen gas into ozone. In this way, even in the case of the second embodiment in which the semiconductor substrate 9 is processed in a mixed atmosphere of ammonia vapor and ozone, the semiconductor substrate 9 is held by the carrier 10, but single-wafer processing is of course also possible. .
第３図は、本実施例および従来のデイツプ式洗浄装置を
用いた場合の、半導体基板表面に付着する微粒子の測定
結果である。FIG. 3 shows the measurement results of fine particles adhering to the surface of a semiconductor substrate when using the present embodiment and the conventional dip type cleaning apparatus.
半導体基板を従来の装置と本実施例により１０分間処理
した後、純水により１０分間リンスを行ない、乾燥後に
半導体基板表面に付着していた微粒子を計測した。従来
の装置で処理した場合、ＨＣｆｆ ／Ｈ２Ｏ２／Ｈ２０
，ＨＮＯ３／Ｈ２Ｏ２では微粒子数は１枚当たり１００
個程度であり、ＮＨ４ＯＨ／Ｈ２Ｏ２／Ｈ２０では２０
個程度であった。これに対して本実施例の洗浄装置で処
理した場合、いずれの場合においても微粒子数は１枚当
たり数個以下であった。After the semiconductor substrate was processed for 10 minutes using the conventional apparatus and the present example, it was rinsed with pure water for 10 minutes, and after drying, the number of particles attached to the surface of the semiconductor substrate was measured. When processed with conventional equipment, HCff /H2O2/H20
, HNO3/H2O2, the number of fine particles is 100 per sheet.
It is about 20 pieces for NH4OH/H2O2/H20.
It was about 1 piece. On the other hand, when the cleaning apparatus of this example was used, the number of fine particles per sheet was several or less in all cases.
第４図は、本実施例および従来のデイツプ式洗浄装置を
用いた場合の、少数キャリアの再結合ライフタイムの測
定結果を示す。FIG. 4 shows the measurement results of the recombination lifetime of minority carriers when using the present embodiment and the conventional dip type cleaning apparatus.
洗浄面を露出させた半導体基板を１０分間処理した後、
純水により１０分間リンスを行なった。After processing the semiconductor substrate with the exposed cleaning surface for 10 minutes,
Rinsing was performed with pure water for 10 minutes.
洗浄後の半導体基板を９５０℃の酸化性雰囲気中で熱処
理した後、少数キャリアの再結合ライフタイムを測定し
た０本実施例の洗浄装置によって処理を行なった場合と
比較して、従来の洗浄装置によって処理を行なった場合
は、少数キャリアの再結合ライフタイムはいずれも低下
している。After heat treating the semiconductor substrate after cleaning in an oxidizing atmosphere at 950°C, the recombination lifetime of minority carriers was measured. When processing is performed by , the recombination lifetimes of minority carriers are all reduced.
少数キャリアの再結合ライフタイムは半導体基板表面の
汚染と密接な関係があり、汚染量が多いと再結合ライフ
タイムは低下する。このことから、本実施例の洗浄装置
によって処理された半導体基板表面は、従来の洗浄装置
によって処理された場合よりも１、清浄であるといえる
。The recombination lifetime of minority carriers is closely related to the contamination of the semiconductor substrate surface, and as the amount of contamination increases, the recombination lifetime decreases. From this, it can be said that the surface of the semiconductor substrate processed by the cleaning apparatus of this embodiment is 1 much cleaner than when processed by the conventional cleaning apparatus.
以上説明したように本発明は半導体基板の洗浄装置に、
アンモニアまたは塩酸または硝酸の蒸気を発生する蒸気
発生部と、発生した蒸気中にオゾン・ガスを導入するガ
ス導入部とを具備することによって、半導体基板表面へ
の微粒子の付着を防ぐことができる上に、半導体基板表
面への不純物の汚染も防止することができる。さらに、
蒸気を利用することにより、細部に至るまで均一に処理
することができる。従って、より高品質、高歩留の半導
体装置を製造することができる効果がある。As explained above, the present invention provides a cleaning apparatus for semiconductor substrates.
By including a steam generation section that generates ammonia, hydrochloric acid, or nitric acid vapor, and a gas introduction section that introduces ozone gas into the generated vapor, it is possible to prevent fine particles from adhering to the surface of the semiconductor substrate. Furthermore, contamination of the semiconductor substrate surface with impurities can also be prevented. moreover,
By using steam, even details can be processed evenly. Therefore, it is possible to manufacture semiconductor devices of higher quality and higher yield.
第１図および第２図は本発明の第１および第２の実施例
の模式断面図、第３図は本実施例および従来の洗浄装置
を用いた場合の、半導体基板表面に付着する微粒子の測
定結果を示す図、第４図は本実施例および従来の洗浄装
置を用いた場合の、少数キャリアの再結合ライフタイム
の測定結果を示す図である。
１・・・処理槽、２・・・アンモニア溶液、３・・・ヒ
ーター、４・・・蒸気発生部、５・・・オゾン・ガス導
入管、６・・・オゾン発生器、７．７Ａ、７Ｂ・・・フ
ィルター、８・・・ガス導入部、９・・・半導体基板、
１０・・・キャリア、１１・・・冷却器、２１・・・水
蒸気発生器、２２・・・蒸気発生器、２３・・・ガス供
給装置、２４・・・酸素ガス供給装置、２５・・・紫外
線光源。
代理人 弁理士 内 原 音
力゛スイスｊ含装置
第３図
第４図1 and 2 are schematic cross-sectional views of the first and second embodiments of the present invention, and FIG. 3 is a schematic cross-sectional view of the particles attached to the surface of a semiconductor substrate when this embodiment and a conventional cleaning device are used. FIG. 4 is a diagram showing the measurement results of the recombination lifetime of minority carriers when the present embodiment and the conventional cleaning device are used. DESCRIPTION OF SYMBOLS 1... Processing tank, 2... Ammonia solution, 3... Heater, 4... Steam generation part, 5... Ozone gas introduction pipe, 6... Ozone generator, 7.7A, 7B... Filter, 8... Gas introduction part, 9... Semiconductor substrate,
DESCRIPTION OF SYMBOLS 10... Carrier, 11... Cooler, 21... Steam generator, 22... Steam generator, 23... Gas supply device, 24... Oxygen gas supply device, 25... UV light source. Agent Patent Attorney Uchihara Onryoku ゛Switzerland Equipment Figure 3 Figure 4
Claims (1)
たは硝酸（ＨＮＯ＿３）の蒸気を発生する蒸気発生部と
、前記蒸気発生部より発生した蒸気中にオゾン（Ｏ＿３
）ガスを導入するガス導入部とを具備することを特徴と
する半導体基板の洗浄装置。A steam generator that generates ammonia (NH_4OH), hydrochloric acid (HCl), or nitric acid (HNO_3) vapor, and ozone (O_3) in the steam generated from the steam generator.
) A cleaning device for a semiconductor substrate, comprising: a gas introduction section for introducing gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9207588A JPH0724265B2 (en) | 1988-04-13 | 1988-04-13 | Semiconductor substrate cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9207588A JPH0724265B2 (en) | 1988-04-13 | 1988-04-13 | Semiconductor substrate cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01262627A true JPH01262627A (en) | 1989-10-19 |
| JPH0724265B2 JPH0724265B2 (en) | 1995-03-15 |
Family
ID=14044334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9207588A Expired - Lifetime JPH0724265B2 (en) | 1988-04-13 | 1988-04-13 | Semiconductor substrate cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0724265B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04222677A (en) * | 1990-12-21 | 1992-08-12 | Tec:Kk | Cleaning machine |
| US5393347A (en) * | 1991-07-23 | 1995-02-28 | Pct Systems, Inc. | Method and apparatus for removable weir overflow bath system with gutter |
| US5423944A (en) * | 1992-06-25 | 1995-06-13 | Texas Instruments Incorporated | Method for vapor phase etching of silicon |
| EP1049142A1 (en) * | 1998-11-13 | 2000-11-02 | Mitsubishi Denki Kabushiki Kaisha | Method and device for removing photoresist film |
| EP1063685A1 (en) * | 1998-11-12 | 2000-12-27 | Mitsubishi Denki Kabushiki Kaisha | Photoresist film removing method and device therefor |
| WO2002027775A1 (en) * | 2000-09-28 | 2002-04-04 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for treating wafer |
| US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US6830628B2 (en) | 1997-05-09 | 2004-12-14 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6837252B2 (en) * | 1997-05-09 | 2005-01-04 | Semitool, Inc. | Apparatus for treating a workpiece with steam and ozone |
| KR100539455B1 (en) * | 1998-09-23 | 2006-03-20 | 삼성전자주식회사 | Etching device for semiconductor device manufacturing using ozone water |
| US7264680B2 (en) | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US7378355B2 (en) | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
-
1988
- 1988-04-13 JP JP9207588A patent/JPH0724265B2/en not_active Expired - Lifetime
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04222677A (en) * | 1990-12-21 | 1992-08-12 | Tec:Kk | Cleaning machine |
| US5393347A (en) * | 1991-07-23 | 1995-02-28 | Pct Systems, Inc. | Method and apparatus for removable weir overflow bath system with gutter |
| US5423944A (en) * | 1992-06-25 | 1995-06-13 | Texas Instruments Incorporated | Method for vapor phase etching of silicon |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7404863B2 (en) | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| US7378355B2 (en) | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
| US7264680B2 (en) | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US6701941B1 (en) * | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US6830628B2 (en) | 1997-05-09 | 2004-12-14 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6837252B2 (en) * | 1997-05-09 | 2005-01-04 | Semitool, Inc. | Apparatus for treating a workpiece with steam and ozone |
| US6843857B2 (en) | 1997-05-09 | 2005-01-18 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| KR100539455B1 (en) * | 1998-09-23 | 2006-03-20 | 삼성전자주식회사 | Etching device for semiconductor device manufacturing using ozone water |
| EP1063685A1 (en) * | 1998-11-12 | 2000-12-27 | Mitsubishi Denki Kabushiki Kaisha | Photoresist film removing method and device therefor |
| EP1063685A4 (en) * | 1998-11-12 | 2004-04-28 | Mitsubishi Electric Corp | Photoresist film removing method and device therefor |
| EP1049142A4 (en) * | 1998-11-13 | 2003-01-02 | Mitsubishi Electric Corp | Method and device for removing photoresist film |
| EP1049142A1 (en) * | 1998-11-13 | 2000-11-02 | Mitsubishi Denki Kabushiki Kaisha | Method and device for removing photoresist film |
| WO2002027775A1 (en) * | 2000-09-28 | 2002-04-04 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for treating wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0724265B2 (en) | 1995-03-15 |
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