WO2001026128A1

WO2001026128A1 - Electron source, method of manufacture thereof, and display device

Info

Publication number: WO2001026128A1
Application number: PCT/JP1999/005401
Authority: WO
Inventors: Masakazu Sagawa; Makoto Okai; Mutsumi Suzuki; Akitoshi Ishizaka; Toshiaki Kusunoki
Original assignee: Hitachi, Ltd.
Priority date: 1999-09-30
Filing date: 1999-09-30
Publication date: 2001-04-12
Also published as: KR20020030827A

Abstract

A thin-film electron source comprises a plurality of electron source elements, each including a laminate of a lower electrode (11), an insulating layer (12) and an upper electrode (13) formed in that order; and a plurality of buses for applying driving voltage to the upper electrode (13) of those in a first direction of the electron source elements. Each of the buses is composed of a thin-film electrode (15) connected electrically with the upper electrode (13), and a thick-film electrode (16) provided on the thin-film electrode (15) and being thicker than the thin-film electrode (15). This structure prevents the increase in resistance of the power buses for applying driving voltage to the electronic source elements and the damage to the upper electrodes (13) in the electron emission part.

Description

Description Electron source, method of manufacturing electron source, and display device

The present invention relates to an electron source, a method of manufacturing the electron source, and a display device, and is particularly applied to a thin-film electron source having a three-layer structure of a lower electrode, an insulating layer, and an upper electrode and emitting electrons in a vacuum. And effective technology. Background art

One of the matrix-type displays (matrix-type displays) that displays images by adjusting the voltage applied to each pixel at the intersection of the electrode groups that are orthogonal to each other is a field emission '' Displays (hereinafter referred to as FEDs) are known.

This FED is, for example, as described in Japanese Patent Application Laid-Open No. Hei 4-289644, after arranging an electron-emitting device for each pixel and accelerating the emitted electrons therefrom in a vacuum, The fluorescent material is irradiated, and the irradiated portion of the fluorescent material emits light.

Thin-film electron source matrix is known as an example of an electron source for FED o

A thin-film electron source is, for example, a device in which a voltage is applied between an upper electrode and a lower electrode in a three-layer thin film structure consisting of an upper electrode, an insulating layer and a lower electrode, and electrons are emitted from the surface of the upper electrode into vacuum. It is.

For example, MIM (Metal-Insulator-Metal) type with metal-insulator-metal stacked, MIS (metal-insulator-metal with metal-insulator-semiconductor electrode stacked) Insulator-semiconductor type, a laminated film composed of a metal-insulator and a semiconductor, a metal, or a semiconductor electrode is known.

The MIM type thin film electron source is described in, for example, Japanese Patent Application Laid-Open No. 7-65710.

FIG. 24 is a diagram for explaining the operating principle of the thin-film electron source. When a driving voltage of Vd is applied between the upper electrode 13 and the lower electrode 11 from a driving voltage source to reduce the electric field in the tunnel insulating layer 12 to about 1 to 10 OMV / cm, the lower electrode 1 Electrons in the vicinity of the Fermi level in 1 pass through the barrier due to the tunnel phenomenon, and are injected into the conduction bands of the tunnel insulating layer 12 and the upper electrode 13 to become a hot electron.

Among these hot electrons, those having energy equal to or higher than the work function (0) of the upper electrode 13 are released into the vacuum 20.

Here, a plurality of upper electrodes 13 and a plurality of lower electrodes 11 are provided, and the plurality of upper electrodes and the plurality of lower electrodes 11 are orthogonal to each other to form a thin-film electron source into a matrix. When formed, an electron beam can be generated from any place, and can be used as an electron source of a display device.

Previously, gold (A u) - oxide Aruminiumu (A 1 ₂ 0 _3;. Hereinafter, simply referred to as A 1 ₂ 0 ₃₎ one aluminum (. A 1; hereinafter simply that referred to as A 1) of the structure Electron emission has been observed from MIM (Metal-Insulator-Metal) structures.

The MIM thin-film electron source emits the hot electron, accelerated by the tunnel insulating layer 12, through the upper electrode 13 and into a vacuum.

Therefore, the film thickness of the upper electrode 13 needs to be extremely thin, about several nm, in order to reduce scattering of the hot electron.

Therefore, the sheet resistance of the upper electrode 13 is about 200 Ω / port, and the unit is The wiring resistance per length can be as high as 7 kQ / cm.

In this case, the operating voltage of the thin-film electron emitter is 10 V and the current consumption is 1 mA, so the voltage drop due to the wiring resistance is 7 V / cm.

Such a large voltage drop is completely fatal when attempting to increase the size of the display screen of a display device using a thin-film electron source, and measures to prevent the voltage drop are indispensable.

The voltage drop can be compensated by the driving method, but it complicates the driving circuit and is not preferable in terms of the reliability of the ultra-thin wiring.

In essence, it is essential to introduce new wiring for power supply.

As the power supply wiring, (1) low resistance, (2) electric contact between the upper electrode 13 and the power supply wiring can be obtained, and (3) the upper electrode 13 does not break at the element step. (4) It is necessary to satisfy the four points that the formation of the power supply wiring does not affect the thin-film electron source device with the tunnel diode structure.

A1 alloy is conceivable as such a power supply wiring material.

For example, A1-neodymium (Nd; hereinafter, simply referred to as Nd) (2 atm%) alloy, which is also used as the lower electrode 11, is a low-resistance material having excellent heat resistance. (2) and (3) have difficulty. That is, since a natural oxide film always intervenes on the surface of A1, contact resistance becomes a problem.

In addition, tape etching using wet etching / reactive ion etching (RIE) is not sufficiently controllable to prevent disconnection, and the tunnel insulating film 12 that becomes the stopper is removed. The damage of could not be ignored. An object of the present invention is to reduce the resistance of a power supply bus electrode in an electron source and a method of manufacturing an electron source. Electrode of the electron source at the electron emission section It is an object of the present invention to provide a technology capable of preventing the disconnection of a step.

be able to.

Another object of the present invention is to provide a technology that can prevent the occurrence of uneven brightness on a display screen by using the thin-film electron source in a display device. .

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings. Disclosure of the invention

The following is a brief description of an outline of typical inventions disclosed in the present application.

That is, the present invention relates to an electron source comprising: a plurality of electron source elements; and a plurality of pass electrodes for applying a drive voltage to the electron source elements in a first direction among the plurality of electron source elements. Each of the bus electrodes is electrically connected to an electrode of each of the electron source elements, and a thin film electrode having a thickness of 10 times or less the thickness of the electrode of the electron source element; It is characterized by comprising a thick-film electrode which is electrically connected to the electrode and has a larger thickness than the thin-film electrode.

Further, the present invention has a structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and when a positive voltage is applied to the upper electrode, electrons are emitted from the upper electrode surface. A thin-film electron source comprising: a plurality of electron source elements to be emitted; and a plurality of bus electrodes for applying a drive voltage to an upper electrode of the electron source element in a first direction among the plurality of electron source elements. Each of the bus electrodes includes a thin-film electrode electrically connected to the upper electrode, and a thick-film electrode provided on the thin-film electrode and having a larger thickness than the thin-film electrode. And features. Further, the present invention has a structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and when a positive voltage is applied to the upper electrode, electrons are emitted from the upper electrode surface. A thin-film electron source comprising: a plurality of electron source elements to be emitted; and a plurality of bus electrodes for applying a drive voltage to an upper electrode of the electron source element in a first direction among the plurality of electron source elements. The bus electrodes each include a thin-film electrode provided integrally with the upper electrode, and a thick-film electrode provided on the thin-film electrode and having a larger thickness than the thin-film electrode. It is characterized by.

Further, the present invention is characterized in that the thick film electrode is formed by using any one of electric plating, sputtering, vacuum evaporation, chemical vapor deposition, or printing.

Further, the present invention is a display device using the thin-film electron source. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a diagram showing a structure of a thin-film electron source according to Embodiment 1 of the present invention. FIG. 2 is a view for explaining a method of manufacturing a thin-film electron source according to Embodiment 1 of the present invention. FIG.

FIG. 3 is a diagram for explaining a method of manufacturing the thin-film electron source according to the first embodiment of the present invention.

FIG. 4 is a diagram for explaining a method of manufacturing the thin-film electron source according to the first embodiment of the present invention.

FIG. 5 is a diagram for explaining a method of manufacturing the thin-film electron source according to the first embodiment of the present invention.

FIG. 6 illustrates a method for manufacturing a thin-film electron source according to Embodiment 1 of the present invention. FIG.

FIG. 7 is a diagram for explaining a method of manufacturing the thin-film electron source according to the first embodiment of the present invention.

FIG. 8 is a diagram for explaining a method of manufacturing the thin-film electron source according to the first embodiment of the present invention.

FIG. 9 is a diagram for explaining a method of manufacturing the thin-film electron source according to the second embodiment of the present invention.

FIG. 10 is a diagram for explaining a method of manufacturing the thin-film electron source according to the second embodiment of the present invention.

FIG. 11 is a diagram for explaining a method of manufacturing a thin-film electron source according to Embodiment 2 of the present invention.

FIG. 12 is a view for explaining a method of manufacturing the thin-film electron source according to the third embodiment of the present invention.

FIG. 13 is a diagram for explaining a method of manufacturing the thin-film electron source according to the third embodiment of the present invention.

FIG. 14 is a diagram for explaining a method of manufacturing the thin-film electron source according to the third embodiment of the present invention.

FIG. 15 is a diagram for explaining a method of manufacturing the thin-film electron source according to the fourth embodiment of the present invention.

FIG. 16 is a view illustrating a method for manufacturing a thin-film electron source according to Embodiment 4 of the present invention.

FIG. 17 is a view for explaining a method of manufacturing the thin-film electron source according to the fourth embodiment of the present invention.

FIG. 18 is a view for explaining a method of manufacturing the thin-film electron source according to the fourth embodiment of the present invention. FIG. 19 is a diagram showing a schematic configuration of a thin-film electron source array substrate of a display device according to Embodiment 5 of the present invention.

FIG. 20 is a diagram showing a schematic configuration of a fluorescent display panel of a display device according to Embodiment 5 of the present invention.

FIG. 21 is a cross-sectional view illustrating a schematic overall configuration of a display device according to Embodiment 5 of the present invention.

FIG. 22 is a schematic diagram showing a state where a drive circuit is connected to the display device according to the fifth embodiment of the present invention.

FIG. 23 is a timing chart showing an example of the waveform of the drive voltage output from each drive circuit shown in FIG.

FIG. 24 is a diagram showing the operating principle of the thin-film electron source. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

In all the drawings for describing the embodiments, those having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

[Embodiment 1]

FIG. 1 is a cross-sectional view showing a structure of one element of a thin-film electron source according to Embodiment 1 of the present invention.

In the thin-film electron source of the present embodiment, the bus electrode serving as the power supply wiring has a bus electrode lower layer 15 electrically connected to the upper electrode 13, and a bus electrode upper layer lining the bus electrode lower layer 15. 16 and the upper layer 16 of the bus electrode is formed of a sputtering film.

Hereinafter, a method for manufacturing the thin-film electron source of the present embodiment will be described with reference to FIGS. 2 to 8. 2A to 8, FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view showing a cross-sectional structure taken along line AA ′ in FIG. Figure (c) is a cross-sectional view showing the cross-sectional structure taken along the line BB of Figure (a).

First, an insulating substrate 10 made of glass or the like is prepared, and a metal film for a lower electrode is formed on the substrate 10.

A1 or A1 alloy is used as a material for the lower electrode.

Here, an Al—Nd alloy in which Nd was doped at 2 atomic weight% was used. The metal film was formed by, for example, sputtering, and the thickness was set to 300 nm.

After forming the metal film, as shown in FIG. 2, a strip-shaped lower electrode 11 is formed by etching.

For the etching, for example, wet etching using a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid was used.

Next, a portion serving as an electron emitting portion on the lower electrode 11 is masked with a resist film 17, and a portion serving as an electron emitting portion on the lower electrode 11 is formed in a chemical conversion solution using the lower electrode 11 as an anode. The other portions are selectively anodized thickly to form a protective insulating layer 14 as shown in FIG.

At this time, assuming that the formation voltage is 100 V, a protection insulating layer 14 having a thickness of about 13 nm is formed.

After the formation of the protective insulating layer 14, the resist film 17 is removed, and anodization is performed again in a chemical solution using the lower electrode 11 as an anode, and as shown in FIG. Next, a tunnel insulating film 12 is formed.

At this time, for example, if the formation voltage is 6 V, a tunnel insulating layer 12 having a thickness of about 10 nm is formed on the lower electrode 11. Next, as shown in FIG. 5, a bus electrode film serving as a power supply line to the upper electrode 13 is formed by sputtering.

Here, as the bus electrode film, a laminated film of a metal film to be the lower layer of the bus electrode (thin film electrode of the present invention) 15 and a metal film to be the upper layer of the bus electrode (thick film electrode of the present invention) 16 is used. Tungsten (W) was used as a material for the lower layer of the bus electrode, and an A1-Nd alloy was used as a material for the upper layer of the bus electrode. The upper limit of the thickness of the metal film to be the bus electrode lower layer 15 is set so that the upper electrode 13 to be formed later is not disconnected by the step of the bus electrode lower layer 15. Set to 10 times the film thickness. More specifically, the thickness is reduced to about several nm to several hundred nm, and the metal film to be the upper layer 16 of the bus electrode is formed to be as thick as about several hundred nm in order to sufficiently supply power.

The lower limit of the thickness may be a thickness that functions as a conductor. The thickness of the upper electrode 13 is preferably about 1/10.

Subsequently, as shown in FIG. 6, the upper layer 16 of the bus electrode is striped in a direction orthogonal to the lower electrode 11 by a photolithography step and an etching step.

Here, for the etching, for example, a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid was used.

Next, as shown in FIG. 7, the bus electrode lower layer 15 is processed in the same photolithography step and etching step.

At this time, it is important to process the lower bus electrode layer 15 so as to protrude from the upper bus electrode layer 16 in order to secure electrical contact with the upper electrode 13 to be formed later in the electron emission section. is there.

For the etching of tungsten (W), a mixed aqueous solution of ammonia and hydrogen peroxide is suitable. Finally, as shown in FIG. 8, an upper electrode 13 is formed. Thus, the thin-film electron source of the present embodiment is completed.

The upper electrode 13 was patterned by lift-off, and the upper electrode 13 was formed by sputtering.

As the upper electrode 13, for example, a laminated film of iridium (Ir), platinum (Pt), and gold (Au) is used, each having a thickness of several nm, and formed as described above. We went by a spa ring.

In the present embodiment, the metal film to be the bus electrode upper layer 16 is formed by sputtering, but the present invention is not limited to this, and the metal film to be the bus electrode upper layer 16 is formed. May be formed by any of the following methods: electric plating, vacuum deposition, chemical vapor deposition, or printing.

According to the thin-film electron source of the present embodiment, the bus electrode upper layer 16 is formed to be as thick as several hundred nm, so that the sheet resistance of the bus electrode constituting the power supply wiring is reduced by the upper electrode 13 The sheet resistance can be reduced by about two orders of magnitude compared to the sheet resistance (about 200 Ω / port), and the resistance of the bus electrode can be reduced.

In addition, since the lower layer 15 of the bus electrode is formed to have a thickness in the range of several nm to several 10 nm, it is possible to prevent the upper electrode 13 from breaking due to a step of the lower layer 15 of the bus electrode. .

[Embodiment 2]

The thin-film electron source according to the second embodiment of the present invention is characterized in that the upper electrode 13 also serves as the lower layer of the bus electrode, and the upper layer 16 of the bus electrode is formed on the upper electrode by sputtering. And

Hereinafter, a method of manufacturing the thin-film electron source according to the present embodiment will be described with reference to FIGS. 9 to 11.

9 to 11, FIG. 9A is a plan view and FIG. 9B is a plan view. Is a cross-sectional view showing a cross-sectional structure taken along the line A-A 'in FIG. (A), and FIG. (C) is a cross-sectional structure taken along the line BB in FIG. (A). It is sectional drawing.

First, similarly to the first embodiment, up to the tunnel insulating layer 12 is formed by the method shown in FIGS.

Next, as shown in FIG. 9, a metal film to be the upper electrode 13 and a metal film to be the bus electrode upper layer 16 are formed by sputtering in this order. The material of the metal film to be the upper electrode 13 is, for example, a laminated film of tungsten (W), platinum (Pt), and gold (Au), each having a thickness of 1 to 3 nm.

The above-mentioned A 1 -Nd alloy is deposited on the material of the metal film to be the bus electrode upper layer 16 by several 100 nm.

Subsequently, a resist pattern is formed by a photolithography process, and the A 1 -Nd alloy other than the upper layer of the bus electrode is removed by wet etching, and as shown in FIG. The upper electrode layer 16 is formed.

For etching, a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid described above is preferable.

Finally, the electron-emitting portion is covered with a resist pattern, the metal film for the upper electrode on the upper layer of the bus electrode is removed, and an upper electrode 13 is formed as shown in FIG. Thus, the thin-film electron source of the present embodiment is completed. For the etching, aqua regia is preferably used for platinum (Pt) and gold (Au), and the above-described mixed aqueous solution of ammonia and hydrogen peroxide is preferably used for tungsten (W).

Also in the present embodiment, the metal film to be the bus electrode upper layer 16 is formed by any one of plating, vacuum deposition, chemical vapor deposition, or printing. よい It may be formed.

According to the thin-film electron source of the present embodiment, the upper layer 16 of the bus electrode is formed to be as thick as several hundred nm, so that the sheet resistance of the bus electrode constituting the power supply wiring is reduced by the upper electrode 13 The sheet resistance can be reduced by about two orders of magnitude compared to the sheet resistance (about 200 Ω / port), and the resistance of the bus electrode can be reduced.

In addition, since the upper electrode 13 is also used as the lower layer of the bus electrode, the disconnection of the upper electrode 13 at the electron emission portion can be prevented.

[Embodiment 3]

The thin-film electron source according to Embodiment 3 of the present invention is characterized in that the upper electrode 13 also serves as the lower layer of the bus electrode, and the upper layer 16 of the bus electrode is formed on the upper electrode by electric plating. I do.

Hereinafter, a method of manufacturing the thin-film electron source of the present embodiment will be described with reference to FIGS. 12 to 14.

In FIGS. 12 to 14, FIG. 12A is a plan view, and FIG. 12B is a cross-sectional view showing a cross-sectional structure taken along the line AA ′ in FIG. (C) is a cross-sectional view showing the cross-sectional structure taken along the line BB in FIG. (A).

Next, as shown in FIG. 12, a metal film to be the upper electrode 13 is formed by sputtering.

The material for the upper electrode is, for example, a laminated film of tungsten (W), platinum (Pt), and gold (Au), each having a thickness of 1 to 3 nm. Subsequently, a portion where the upper layer 16 of the bus electrode is not formed is covered with a resist pattern, and a gold (Au) film is grown as a backing electrode by an electrolytic gold plating. As shown in FIG. 13, an upper layer 16 of the bus electrode is formed.

Finally, the electron-emitting portion is covered with a resist pattern, the metal film for the upper electrode on the upper layer of the bus electrode is removed, and an upper electrode 13 is formed as shown in FIG. Thus, the thin-film electron source of the present embodiment is completed. For etching, aqua regia is preferable for platinum (Pt) and gold (Au), and the above-mentioned mixed aqueous solution of ammonia and hydrogen peroxide is preferable for tungsten (W).

In this embodiment, the upper layer 16 of the bus electrode may be formed by any one of sputtering, vacuum evaporation, chemical vapor deposition, or printing.

However, when a gold (Au) film is grown as a backing electrode by electrolysis gold plating to form the bus electrode upper layer 16 as in the present embodiment, the upper electrode 13 and the bus electrode upper layer 1 are formed. 6 and the thickness of the upper layer 16 of the bus electrode can be set arbitrarily, and the damage to the tunnel insulating layer 12 is reduced as compared with other processes. Can be.

According to the thin-film electron source of the present embodiment, since the upper layer 16 of the bus electrode is formed to be as thick as several hundred nm, the sheet resistance of the bus electrode constituting the power supply wiring is reduced by the upper electrode 13 It can be reduced by about two orders of magnitude compared to the sheet resistance (about 200 Ω / port), and the resistance of the bus electrode can be reduced.

[Embodiment 4]

In the thin-film electron source according to the fourth embodiment of the present invention, the upper electrode 13 is electrically connected to the lower bus electrode layer 15, and the upper electrode layer 15 is electrically connected to the lower bus electrode layer 15 by electric plating. 6 is formed. Hereinafter, a method of manufacturing the thin-film electron source of the present embodiment will be described with reference to FIGS. 15 to 18.

15A to 18, FIG. 15A is a plan view, and FIG. 15B is a cross-sectional view showing a cross-sectional structure taken along line AA of FIG. (C) is a cross-sectional view showing a cross-sectional structure taken along the line BB of FIG. (A).

First, similarly to the first embodiment, up to the tunnel insulating layer 12 is formed by the method shown in FIGS. 2 to 4.

Next, as shown in FIG. 15, a metal film to be the lower layer 15 of the bus electrode is formed by sputtering.

As a material of the metal film to be the bus electrode lower layer 15, for example, a laminated film of tungsten (W) and gold (Au) is preferable, and the thickness of each is preferably about 10 nm.

Subsequently, a portion where the upper layer 16 of the bus electrode is not formed is covered with a resist pattern, and a gold (Au) film is grown as a backing electrode by an electrolytic gold plating. As shown in FIG. The upper layer 16 is formed.

Next, as shown in FIG. 17, the lower layer 15 of the bus electrode is processed by a photolithography step and an etching step.

At this time, it should be noted that, in order to secure an electrical contact with the upper electrode 13 to be formed later in the electron-emitting portion, the bus electrode lower layer 15 is processed so as to protrude from the bus electrode upper layer 16. is there.

Refined water is used for etching gold (Au), and the above-mentioned mixed aqueous solution of ammonia and hydrogen peroxide is used for etching tungsten (W). Finally, as shown in FIG. 18, an upper electrode 13 is formed. Thus, the thin-film electron source of the present embodiment is completed. The upper electrode 13 is patterned by lift-off, and the upper electrode 13 is formed by sputtering.

As the upper electrode 13, for example, a laminated film of iridium (Ir), platinum (Pt), and gold (Au) is used, each having a thickness of several nm, and the film is formed by sputtering as described above. The ring was used.

Also in the present embodiment, the metal film to be the pass electrode upper layer 16 may be formed by any of sputtering, vacuum deposition, chemical vapor deposition, or printing.

According to the thin-film type electron source of the present embodiment, the pass electrode upper layer 16 is formed to be as thick as about several hundred nm, so that the sheet resistance of the bus electrode constituting the power supply wiring is reduced by the sheet of the upper electrode 13. The resistance can be reduced by about two digits compared to the resistance (about 200 Ω / port), and the resistance of the bus electrode can be reduced.

In addition, since the lower layer 15 of the bus electrode is formed as thin as several nm to several 1 Onm, the disconnection of the upper electrode 13 at the step of the lower layer 15 of the bus electrode can be prevented.

In each of the above embodiments, an embodiment in which the present invention is applied to a thin-film electron source has been described. However, the present invention is not limited to this. Needless to say, the present invention can be applied to other electron sources.

[Embodiment 5]

FIG. 19 is a diagram showing a schematic configuration of a thin-film electron source array substrate of a display device according to Embodiment 5 of the present invention.

FIG. 19 (a) is a plan view of the thin-film type electron source array substrate of the present embodiment, and FIG. 19 (b) is a cross-sectional structure taken along line AA shown in FIG. , And (c) show the cross-sectional structure along the line BB 'shown in (a). It is an important section sectional view shown.

In this embodiment, the case where the thin-film electron source of the first embodiment is used as the thin-film electron source array substrate will be described. However, the thin-film electron source of the second to fourth embodiments may be used. It may be.

The thin-film electron source array substrate of the present embodiment is formed by forming a thin-film electron source in a matrix on the substrate 10 according to the procedure described in the first embodiment.

In FIG. 19, a (3 × 3) dot thin film type electron source matrix composed of three lower electrodes 11 and three upper electrode paths 17 is shown. In practice, a number of thin-film electron source matrices corresponding to the number of display dots are formed.

In addition, the bus electrode is actually a laminated structure of the lower layer 15 of the bus electrode and the upper layer 16 of the bus electrode. However, in FIG. 19, they are collectively shown as the laminated pass electrode 18.

Although not described in the above embodiments, when the thin film type electron source matrix is used for a display device, the electrode portions of the lower electrode 11 and the upper bus electrode 18 are electrodes for circuit connection. The surface must be exposed.

FIG. 20 (a) is a plan view of the fluorescent display panel of the present embodiment, and FIG. 20 (b) is a cross-sectional structure taken along the line A--A shown in FIG. FIG. (C) is a cross-sectional view of a main part showing a cross-sectional structure along the line BB ′ shown in FIG. (A).

The fluorescent display panel of the present embodiment includes a black matrix 120 formed on a substrate 110 such as a soda glass, and a groove of the black matrix 120. It consists of red (R) and green (G) 'blue (B) phosphors (111-1113) formed in the inside, and a mail-back film 114 formed on these Is done. Hereinafter, a method for manufacturing the fluorescent display panel of the present embodiment will be described.

First, a black matrix 120 is formed on the substrate 110 in order to increase the contrast of the display device.

The black matrix 120 is formed by applying a solution of a mixture of polyvinyl alcohol (PVA; hereinafter, simply referred to as PVA) and ammonium dichromate to the substrate 110 to form the black matrix 120 After exposing to light by irradiating ultraviolet rays to the part other than the part to be exposed, the unexposed part is removed, a solution in which graphite powder is dissolved is applied, and PVA is formed by lift-off.

Next, the red phosphor 111 is formed by the following method.

After applying an aqueous solution of a mixture of PVA and ammonium bichromate to the red phosphor particles on the substrate 110, the portion where the phosphor is to be formed is exposed to ultraviolet light, and then exposed, and the unexposed portion is flushed. To remove.

Thus, the red phosphor 111 is patterned.

The phosphor pattern is a stripe pattern shown in FIG. 20, but this stripe pattern is merely an example. Of course, an “R GB G” pattern in which one pixel is composed of four dots may be used.

A green phosphor 112 and a blue phosphor 113 are formed by the same method. Here, as a phosphor, for example, a red phosphor 1 1 1 _{_{Y 2 0 2 S: E u}} (Ρ 2 2 - R), green phosphor 1 1 2 Z n S: Cu, A l (P 2 2—G). As the blue phosphor 1 13, ZnS: Ag (P22—B) may be used.

Next, after filming with a film such as nitrocellulose, the substrate 11 A1 is deposited on the entire surface to a thickness of about 5 nm to form a metal back film 114. This metal back film 114 works as an accelerating electrode.

After that, the substrate 110 is heated to about 400 ° C. in the air to thermally decompose organic substances such as a film and a PVA.

Thus, the fluorescent display panel is completed.

The figure (a) shows the cross-sectional structure along the line AA shown in Figs. 19 and 20 (a), and the figure (B) shows the figures 19 and 20 (a). 2) is a cross-sectional view of a main part showing a cross-sectional structure along the line BB shown in FIG.

As shown in FIG. 21, the thin film type electron source array substrate manufactured by the above procedure, a fluorescent display panel, and a frame member 116 are assembled via a spacer 30. After erection, the frame member 116 is sealed using the flat glass 115. The height of the spacer 30 is set so that the distance between the thin film type electron source array substrate and the fluorescent display panel is about 1 to 3 mm.

The spacer 30 is, for example, a plate-shaped glass or ceramic sensor, and the spacer 30 is arranged between the laminated bus electrodes 18.

In this case, since the spacer 30 is disposed below the black matrix 120 of the fluorescent display panel, the spacer 30 does not hinder light emission.

Therefore, deterioration of the image quality due to the presence of the spacer 30 is unlikely to occur. Here, for the sake of explanation, all the dots 30 emitting light for R (red), G (green), and B (blue), that is, all the spacers 30 are provided between the stacked bus electrodes 18. However, in practice, the number of spacers 30 (density) should be reduced and set approximately every 1 cm as long as the mechanical strength can withstand.

In the present embodiment, a pillar-shaped spacer is used as the spacer 30. Panels can be assembled using the same method even when using grids or grid-shaped spacers.

Sealed panels is evacuated to 1 0_ ⁷ T 0 rr about vacuum, after sealed sealing to (sealing, rodents evening scratch activated to maintain the vacuum in the panel.

For example, in the case of a getter material mainly containing norm (Ba), a getter film can be formed by high-frequency induction heating or the like.

Alternatively, a non-evaporable gas containing zirconium (Zr) as a main component may be used.

Thus, the display device of the present embodiment is completed.

In the display device of the present embodiment, since the distance between the thin film type electron source array substrate and the fluorescent display plate is as long as about 1 to 3 mm, the acceleration voltage applied to the metal back film 114 is set to 3 to 6 KV and high voltage.

Therefore, as described above, a phosphor for a cathode ray tube (CRT) can be used as the phosphor.

According to the display device of the present embodiment, even when a large number of thin-film electron sources are arranged in an array to form a 40-inch class large-screen cold-cathode fluorescent display device, the pass electrode forming the power supply wiring Since the resistance of the thin film type electron source element can be operated without uneven brightness, it is possible to prevent uneven brightness on the display screen.

FIG. 22 is a schematic diagram showing a state where a drive circuit is connected to the display device of the present embodiment.

The lower electrode 11 is driven by a lower electrode drive circuit 40, and the laminated bus electrode 18 is driven by an upper electrode drive circuit 50.

Here, the connection between each drive circuit (40, 50) and the thin film type electron source array substrate is performed, for example, by pressing a tape carrier package with an anisotropic conductive film. The semiconductor chips constituting the components and the drive circuits (40, 50) are formed by chip-on-glass, which is directly mounted on a substrate (eg, glass) of a thin-film type electron source array substrate.

An acceleration voltage of about 3 to 6 KV is applied to the metal back film 114 from the acceleration voltage source 60 at all times.

Here, the m-th lower electrode 11 is Km, the n-th laminated pass electrode 18 is C n, and the intersection of the m-th lower electrode 11 and the n-th laminated bus electrode 18 is (m, n ).

At time t 0, no driving voltage is applied to any of the electrodes, so that no electrons are emitted, and thus the phosphor does not emit light.

At time t 1, the driving voltage of (−V 1) from the lower electrode driving circuit 40 is applied to the lower electrode 11 of K 1, and the upper electrode driving circuit is applied to the laminated bus electrode 18 of (C 1, C 2). A driving voltage of 50 to (+ V 2) is applied.

Since a voltage (V 1 + V 2) is applied between the lower electrode 11 and the upper electrode 13 at the intersections (1, 1) and (1, 2), the (V 1 + V 2) If the voltage is set to be equal to or higher than the electron emission start voltage, electrons are emitted from the thin-film electron source at the intersection of these two into a vacuum.

The emitted electrons are accelerated by an accelerating voltage from an accelerating voltage source 60 applied to the metal back film 114, and then enter the phosphors (111 to 113) to emit light.

At time t2, a drive voltage (-VI) from the lower electrode drive circuit 40 is applied to the lower electrode 11 of K2, and the upper electrode drive circuit 50 is applied to the laminated bus electrode 18 of C1. (+ V 2) P

21 points (2, 1) light up.

Thus, a desired image or information can be displayed by changing the signal applied to the laminated bus electrode 18.

Further, by appropriately changing the magnitude of the driving voltage (+ V 2) applied to the laminated bus electrode 18, an image with gradation can be displayed.

Here, the application of the inversion voltage for releasing the charges accumulated in the tunnel insulating layer 12 is performed by applying the driving voltage of (−VI) from the lower electrode driving circuit 40 to all of the lower electrodes 11. After the application, the driving voltage of (+ V 3) from the lower electrode driving circuit 40 is applied to all the lower electrodes 11, and the driving voltage of (−V 3,) from the upper electrode driving circuit 50 to all the laminated bus electrodes 18 This was achieved by applying a drive voltage.

As described above, the invention made by the inventor has been specifically described based on the embodiment. However, the invention is not limited to the embodiment, and various modifications may be made without departing from the gist of the invention. Of course, it can be changed. Industrial applicability

The following is a brief description of an effect obtained by a representative one of the inventions disclosed in the present application.

(1) According to the electron source of the present invention, a power supply bus electrode for applying a drive voltage to the electron source element is formed of a thin film electrode and a low-resistance thick film electrode lined on the thin film electrode. With this structure, the sheet resistance of the bus electrode can be reduced by about two orders of magnitude compared to the sheet resistance of the upper electrode, and the resistance of the bus electrode can be reduced.

In addition, since the thin-film electrode was formed thin enough to be about the thickness of the electrode of the electron source, It is possible to prevent disconnection of the electrode of the electron source at the electron emission portion.

(2) According to the display device of the present invention, the resistance of the bus electrode constituting the power supply wiring can be reduced even on a large screen of a 40-inch class, and it is possible to prevent the occurrence of uneven brightness on the display screen. It becomes possible.

Claims

Scope of Claim 1. Multiple electron source devices,

A plurality of bus electrodes for applying a driving voltage to the electron source element in a first direction among the plurality of electron source elements,

Each of the bus electrodes is electrically connected to an electrode of each of the electron source elements, and a thin film electrode having a thickness equal to or less than the thickness of the electrode of the electron source element;

An electron source, comprising: a thick-film electrode that is electrically connected to the thin-film electrode and has a larger thickness than the thin-film electrode.

2. The electronic device according to claim 1, wherein the thick film electrode is a metal layer formed by any one of plating, vacuum deposition, chemical vapor deposition, and printing. source.

3. It has a structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the surface of the upper electrode when a positive voltage is applied to the upper electrode. An electron source element;

A thin-film electron source having a plurality of bus electrodes for applying a drive voltage to an upper electrode of the electron source element in a first direction among the plurality of electron source elements; A thin-film electron source, comprising: a thin-film electrode electrically connected to an electrode; and a thick-film electrode provided on the thin-film electrode and having a larger thickness than the thin-film electrode.

4. The thin-film electron source according to claim 3, wherein said thin-film electrode has a thickness not more than 10 times the thickness of said upper electrode.

5. The thin-film electrode and the thick-film electrode each have an opening through which the insulating layer is exposed, and the opening provided in the thick-film electrode is larger than the opening provided in the thin-film electrode. And The thin film according to claim 3, wherein the upper electrode is provided so as to cover the thin film electrode exposed in an opening provided in the thick film electrode. Type electron source.

6. The claim according to claim 3, wherein the thick film electrode is a metal layer formed by any one of plating, vacuum deposition, chemical vapor deposition, or printing. 6. The thin-film electron source according to any one of paragraphs 5 to 5.

7. A structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the surface of the upper electrode when a positive voltage is applied to the upper electrode. An electron source element;

A thin-film electron source having a plurality of bus electrodes for applying a drive voltage to an upper electrode of the electron source element in a first direction among the plurality of electron source elements; A thin-film electron source, comprising: a thin-film electrode provided integrally with an electrode; and a thick-film electrode provided on the thin-film electrode and having a larger thickness than the thin-film electrode.

8. The thin-film electron source according to claim 7, wherein each of said thick film electrodes has an opening provided in a region where said insulating layer is formed.

9. The claim 7 or claim, wherein the thick film electrode is a metal layer formed by any one of plating, vacuum deposition, chemical vapor deposition, or printing. 9. The thin-film electron source according to item 8, wherein

10. A structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the surface of the upper electrode when a positive voltage is applied to the upper electrode. Electron source elements,

A thin film electrode electrically connected to the upper electrode; And a driving voltage is applied to an upper electrode of the electron source element in a first direction among the plurality of electron source elements. A method for manufacturing a thin-film electron source having a plurality of pass electrodes, comprising:

Step 1 of forming the lower electrode;

Step 2 of forming the insulating layer;

A step 3 of forming a thin film conductive film on the lower electrode and the insulating layer, and a step 4 of forming a thick film conductive film on the thin film conductive film,

Step 5 of selectively patterning the thick-film conductive film to form the thick-film electrode;

Step 6 of selectively patterning the thin film conductive film to form the thin film electrode,

Forming a top electrode electrically connected to the thin-film electrode. 7. A method for manufacturing a thin-film electron source, comprising:

11. In the step 3 of forming the thin-film conductive film, the thin-film conductive film is formed such that the thickness of the thin-film conductive film is 10 times or less the thickness of the upper electrode. 10. The method for manufacturing a thin-film electron source according to claim 10, wherein:

12.In step 5 of selectively patterning the thick film conductive film, an opening is formed in the thick film electrode so that the insulating layer is exposed,

In step 6 of selectively patterning the thin-film conductive film, an opening is formed in the thin-film electrode inside the opening formed in the thick-film electrode to expose the insulating layer;

Further, in the step 7 of forming the upper electrode, the upper electrode is covered so as to cover the thin-film electrode exposed in an opening formed in the thick-film electrode. 12. The method of manufacturing a thin-film electron source according to claim 10 or claim 11, wherein:

13. In the step 4 of forming the thick film conductive film, the thick film conductive film is formed by any one of plating, sputtering, vacuum deposition, chemical vapor deposition, or printing. The method for manufacturing a thin-film electron source according to any one of claims 10 to 12, characterized by the above-mentioned.

14. A structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the surface of the upper electrode when a positive voltage is applied to the upper electrode. Electron source elements,

A thin-film electrode electrically connected to the upper electrode; and a thick-film electrode provided on the thin-film electrode and having a thickness greater than that of the thin-film electrode. A method of manufacturing a thin-film electron source, comprising: a plurality of bus electrodes for applying a driving voltage to an upper electrode of an electron source element in a first direction inside;

Step 1 of forming the lower electrode;

Step 2 of forming the insulating layer;

A step 3 of forming a thin film conductive film on the lower electrode and the insulating layer; and a step 4 of selectively forming a thick film electrode on the thin film conductive film.

Forming the thin film electrode by selectively patterning the thin film conductive film, 5.

Forming a top electrode electrically connected to the thin-film electrode. 6. A method for manufacturing a thin-film electron source.

15. In the step 3 of forming the thin-film conductive film, the thin-film conductive film is formed such that the thickness of the thin-film conductive film is 10 times or less the thickness of the upper electrode. 15. The thin film according to claim 14, wherein Method of manufacturing a type electron source.

16. In the step 4 of selectively forming the thick film electrode, an opening is formed in the thick film electrode so that the insulating layer is exposed,

In step 5 of selectively patterning the thin film conductive film, an opening is formed in the thin film electrode so that the insulating layer is exposed,

Further, in the step (6) of forming the upper electrode, the upper electrode is formed so as to cover the thin film electrode exposed in an opening provided in the thick film electrode. 16. The method for producing a thin-film electron source according to claim 15 or claim 15.

17. In the step 4 of selectively forming a thick film electrode, the thick film electrode is formed by any one of plating, sputtering, vacuum deposition, chemical vapor deposition, or printing. The method for producing a thin-film electron source according to any one of claims 14 to 16, wherein the method comprises:

18. A structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the surface of the upper electrode when a positive voltage is applied to the upper electrode. Electron source elements,

A thin film electrode provided integrally with the upper electrode; and a thick film electrode provided on the thin film electrode and having a larger thickness than the thin film electrode. A method of manufacturing a thin-film electron source, comprising: a plurality of bus electrodes for applying a driving voltage to an upper electrode of an electron source element in a first direction of the first direction.

Step 1 of forming the lower electrode;

Step 2 of forming the insulating layer;

Step 3 of forming a thin film conductive film on the lower electrode and the insulating layer; Step 4 of forming a thick conductive film on the thin conductive film;

A step 6 of selectively patterning the thin-film conductive film to form the thin-film electrode and the upper electrode.

19. The method according to claim 18, wherein in the step 5 of selectively patterning the thick film conductive film, an opening for exposing the insulating layer is formed in the thick film electrode. Of manufacturing a thin film type electron source.

20. In the step 4 of forming the thick-film conductive film, the thick-film conductive film is formed by any one of plating, sputtering, vacuum deposition, chemical vapor deposition, or printing. 10. The method of manufacturing a thin-film electron source according to claim 18 or claim 19.

21. A structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the upper electrode surface when a positive voltage is applied to the upper electrode. Electron source elements,

Step 1 of forming the lower electrode;

Step 2 of forming the insulating layer;

A step 3 of forming a thin film conductive film on the lower electrode and the insulating layer; and a step 4 of selectively forming a thick film electrode on the thin film conductive film. A step 5 of selectively patterning the thin-film conductive film to form the thin-film electrode and the upper electrode.

22. The method according to claim 21, wherein in the step 4 of selectively forming a thick film electrode, an opening is formed in the thick film electrode so that the insulating layer is exposed. A method for manufacturing a thin-film electron source.

23. In the step 4 for selectively forming the thick film conductive film, the thick film conductive film is formed by any one of plating, sputtering, vacuum deposition, chemical vapor deposition, or printing. The method for producing a thin-film electron source according to claim 21 or claim 22, wherein the electron source is formed.

24. A first substrate having a plurality of electron source elements, and a plurality of pass electrodes for applying a drive voltage to the electron source elements in a first direction among the plurality of electron source elements,

A frame member;

A display device comprising: a second substrate having a phosphor, wherein a space surrounded by the first substrate, the frame member, and the second substrate is a vacuum atmosphere,

Each bus electrode of the first substrate is electrically connected to an electrode of each of the electron source elements, and a thin film electrode having a thickness equal to or less than the thickness of the electrode of the electron source element;

A display device comprising: a thick-film electrode that is electrically connected to the thin-film electrode and has a larger thickness than the thin-film electrode.

25. The method according to claim 24, wherein the thick film electrode is a metal layer formed by any one of plating, vacuum deposition, chemical vapor deposition, or printing. The display device according to claim 1.

26. A structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the surface of the upper electrode when a positive voltage is applied to the upper electrode. A first substrate having: a plurality of electron source elements; and a plurality of bus electrodes for applying a drive voltage to an upper electrode of the electron source element in a first direction among the plurality of electron source elements.

A frame member;

A second substrate having a phosphor, wherein a space surrounded by the first substrate, the frame member, and the second substrate is a vacuum atmosphere,

Each bus electrode of the first substrate, a thin film electrode electrically connected to the upper electrode,

A display device, comprising: a thick-film electrode provided on the thin-film electrode and having a larger thickness than the thin-film electrode.

27. The display device according to claim 26, wherein said thin-film electrode has a thickness not more than 10 times the thickness of said upper electrode.

28. The thin-film electrode and the thick-film electrode each have an opening through which the insulating layer is exposed, and the opening provided in the thick-film electrode is larger than the opening provided in the thin-film electrode. ,

The said upper electrode is provided so that the said thin film electrode exposed in the opening part provided in the said thick film electrode may be provided, The Claim 26 or Claim 27 characterized by the above-mentioned. Display device.

29. The method according to claim 26, wherein the thick film electrode is a metal layer formed by any one of plating, vacuum deposition, chemical vapor deposition, or printing. The display device according to any one of Items 28 to 28.

30. A structure in which a lower electrode, an insulating layer, and an upper electrode are laminated in this order, and a plurality of electrodes that emit electrons from the surface of the upper electrode when a positive voltage is applied to the upper electrode. A first substrate having a plurality of electron source elements, and a plurality of pass electrodes for applying a drive voltage to an upper electrode of the electron source elements in a first direction among the plurality of electron source elements;

A frame member;

Each bus electrode of the first substrate,

A display device comprising: a thick-film electrode provided on the thin-film electrode and having a larger thickness than the thin-film electrode.

31. The display device according to claim 30, wherein the thick-film electrode has an opening provided in a region where the insulating layer is formed.

32. The method according to claim 30, wherein the thick film electrode is a metal layer formed by any one of plating, vacuum deposition, chemical vapor deposition, or printing. Alternatively, the display device according to claim 31.