WO2001020352A1 - Quantitative imaging of dielectic permittivity and tunability - Google Patents
Quantitative imaging of dielectic permittivity and tunability Download PDFInfo
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- WO2001020352A1 WO2001020352A1 PCT/US2000/008943 US0008943W WO0120352A1 WO 2001020352 A1 WO2001020352 A1 WO 2001020352A1 US 0008943 W US0008943 W US 0008943W WO 0120352 A1 WO0120352 A1 WO 0120352A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
- G01R27/2635—Sample holders, electrodes or excitation arrangements, e.g. sensors or measuring cells
- G01R27/2658—Cavities, resonators, free space arrangements, reflexion or interference arrangements
- G01R27/2664—Transmission line, wave guide (closed or open-ended) or strip - or microstrip line arrangements
Definitions
- the present invention relates generally to imaging, and more particularly to measuring dielectric properties using a near-field scanning microwave microscope.
- Dielectric thin film research has become increasingly important as the demand grows for smaller, faster, and more reliable electronics.
- high permittivity thin films are under study in order to fabricate smaller capacitors while minimizing leakage.
- Low permittivity materials are being sought to allow smaller scale circuits while minimizing undesirable stray capacitance between wires.
- Nonlinear dielectrics which have a dielectric permittivity which is a function of electric field, are being used in tunable devices, particularly at microwave frequencies.
- ferroelectric thin films are a solution for large- scale, non-volatile memories.
- Dielectric resonators have been used as well, but also have the problem of low spatial resolution. More recently, near-field microscopy techniques have allowed quantitative measurements with spatial resolutions much less than the wavelength. These techniques use a resonator which is coupled to a localized region of the sample through a small probe and have the advantage of being nondestructive. However, it is still difficult to arrive at quantitative results and maintain high spatial resolution. Therefore, what is needed is a non-destructive, non-invasive, system and method for imaging quantitative permittivity and tunability at high spatial resolution.
- the present invention meets the above-mentioned needs by providing a system, apparatus, and method for quantitatively imaging the dielectric properties of bulk and thin film dielectric samples. Permittivity and dielectric tunability are two examples of dielectric properties capable of measurement by the present invention.
- the system uses a near-field scanning microwave microscope (NSMM).
- the NSMM is comprised of a coaxial transmission line resonator having one end coupled to a microwave signal source and the other end terminating with an open- ended coaxial probe.
- the probe which has a sharp-tipped center conductor extending beyond the outer conductor, is held fixed while the sample is raster scanned beneath the probe tip.
- a spring-loaded cantilever sample holder gently presses the sample against the probe tip with a force of about 50 ⁇ N
- a feedback circuit keeps the microwave signal source locked onto a selected resonant frequency of the microscope resonator. Because the electric fields generated by the microwave signal are concentrated at the probe tip, the resonant frequency and quality factor of the resonator are a function of the sample properties near the probe tip. Once the microwave signal has been applied to the sample through the probe tip, it is reflected back through the system. The feedback circuit is then able to receive the reflected microwave signal from the coaxial transmission line resonator and calculate a resonant frequency shift. The resonant frequency shift value is then stored in a computer. The computer also controls the scanning of the sample beneath the probe. To obtain quantitative results, the system uses calibration curves to exhibit the relationship between the calculated resonant frequency shift data values and the dielectric properties of a sample.
- the invention described herein has the advantage of being able to provide quantitative results for samples on a length scale of about l ⁇ m or less. This allows for the measuring of sample sizes relative to the actual environment in which they will be used.
- the invention also has the advantage of providing more accurate quantitative results because the sharp protruding center conductor is represented as a cone during modeling.
- FIG. 1 illustrates the general structure and functionality of an embodiment of the present invention.
- FIG. 2 illustrates the use of a spring-loaded cantilever sample support according to an embodiment of the present invention.
- FIG.3 is a diagram of a quantitative modeler used in an embodiment of the present invention.
- FIG. 4 illustrates a resonant frequency shift detected by measurements taken when a sample was present versus when a sample was not present.
- FIG.5 shows a perturbation formula used in an embodiment of the present invention.
- FIG. 6 is a diagram of the electric equipotential lines for a bulk sample according to a quantitative model of the present invention.
- FIG.7 is a diagram of the electric equipotential fields for at n film sample according to a quantitative model of the present invention.
- FIG. 8 is a diagram illustrating the modeling of the electric field near the microscope probe tip in an embodiment of the present invention.
- FIG. 9 is a flow chart illustrating a method for determining dielectric properties according to the present invention.
- FIG. 10 is a flow chart depicting an embodiment of a calibration routine of the present invention.
- FIG. 11 is a flow chart depicting an embodiment of a scanning routine of the present invention.
- FIG. 12 is a flow chart depicting an embodiment of a probe calibration curve generating routine.
- FIG. 13 is a diagram representative of quantitative modeling curves generated in an embodiment of the present invention.
- FIG. 14 is a diagram representative of a calibration curve generated in an embodiment of the present invention.
- FIG. 15 illustrates the use of a modulating bias voltage to measure dielectric nonlinearity according to an embodiment of the present invention.
- FIG. 16 illustrates a probe tip geometry descriptor according to an embodiment of the present invention.
- FIG. 17 is a diagram representative of a calibration curve generated in an embodiment of the present invention.
- FIG. 18 illustrates frequency shift measurements taken at different heights for several dielectric samples according to an embodiment of the present invention.
- FIG. 19 is a diagram representative of calibration curves generated for frequency shift measurements taken at heights of 100 ⁇ m and 10 ⁇ m according to an embodiment of the present invention.
- FIG. 20 illustrates the dielectric constant of a LaAlO 3 sample imaged at 100 ⁇ m and 9.08 GHz using a 480 ⁇ m diameter probe according to an embodiment of the present invention.
- FIG. 21 is a chart displaying dielectric constant values taken from literature and the dielectric constant values obtained from experimental measurements taken according to a method of the present invention.
- FIG.22a illustrates a dielectric constant image of a test sample taken with a 480 ⁇ m probe at 9.08 GHz and 100 ⁇ m above the sample according to an embodiment of the present invention.
- FIG. 22b illustrates the topography of a test sample found according to a method of the present invention.
- the invention described herein is a system, apparatus, and method for displaying the dielectric properties of bulk and thin film samples.
- the invention uses a near-field scanning microwave microscope (NSMM). Physical Design for the System of the Present Invention
- System 100 shows a near-field scanning microwave microscope having an open-ended coaxial probe 130 with a sharp, protruding center conductor 185.
- a coaxial transmission line resonator 135 is used for producing a resonance between the probe tip 185 and the capacitive coupler 145.
- the microwave signal source 165 is responsible for generating a microwave signal.
- the feedback circuit 160 receives a reflected microwave signal from the coaxial transmission line resonator 135. Feedback circuit 160 also keeps the microwave signal source 165 locked onto a predetermined resonance.
- An additional function of the feedback circuit 160 is to calculate a value for at least one parameter related to a change in the resonance due to the dielectric properties of a sample 125.
- a stage 120 is used to support the sample 125 in contact with the sharp protruding center conductor 185.
- a further embodiment of the present invention has a spring-loaded cantilever sample holder 210 provided to hold the sample relative to the sharp protruding center conductor 185 and stage 120.
- System 100 further includes motor controllers 115 for manipulating the sample 125 in contact with the sharp protruding center conductor 185 in a first, second, or third direction; for example, the sample can be moved and/or rotated along the x, y and z axes.
- Coupler 150 is attached between the microwave signal source 165 and the coaxial transmission line resonator 135.
- Coupler 150 could be a directional coupler, circulator, or other device for directing microwave signals known to one of ordinary skill in the art.
- the coupler initially directs the microwave signal towards the sample 125 and then directs the reflected microwave signal towards the feedback circuit 160.
- a detector 155 is responsible for converting the reflected signal directed towards the feedback circuit 160 into a voltage signal representative of detected power.
- a computer 105 having both memory and a processor is also shown.
- the memory of computer 105 stores electric field configuration data files used for quantitative modeling.
- Computer 105 also stores calibration sample frequency shift values and test sample frequency shift values.
- the processor of computer 105 mathematically determines the functional relationship between at least one parameter related to a change in the resonant frequency shift and a known dielectric property value of a sample responsible for the change.
- a parameter is relative dielectric permittivity (e r ).
- Display device 110 is provided for displaying the value of the dielectric property once it has been determined by the processor 105.
- FIG. 2 illustrates an alternative embodiment for the present invention where a spring-loaded sample support 200 is used to support the sample 125 beneath the probe tip 185.
- Sample support 200 uses a cantilever sample holder 210 having an angled end and a planar surface for supporting sample 125.
- a first bracing device 230 is fixed to the x-y stage and is joined to sample holder 210 by a spring 220.
- the spring 220 is positioned such that it is in close proximity to the pivot point created when the angled portion of sample holder 210 is brought into contact with a second bracing device 240 also attached to the x-y stage.
- This spring cantilever design allows the force applied by the probe tip 185 to remain substantially constant during scanning.
- the amount of force applied can be set by selecting an appropriate spring and adjusting the location of the spring and/or sample along the cantilever sample holder 210. In one example, a force of about 50 ⁇ N (microNewtons) is applied between the probe tip and sample 125.
- System 100 also has a quantitative modeler described in FIG. 3 for determining the model frequency shift-dielectric property relationship. Quantitative modeler 300 receives resonant frequency shift values for calibration samples with known dielectric properties and test samples with unknown dielectric properties from computer 105 memory.
- Quantitative modeler 300 provides the measured resonant frequency shift data to Model calibration curve generator 310 Probe calibration curve generator 320 and Test sample curve generator 330 in order to generate data (such as, tables, graphs, files or curves) showing the relationship between a measured resonant frequency shift and a particular dielectric property .
- Model calibration curve generator 310 generates model calibration curves at different values of a geometric descriptor that show the relationship between a measured resonant frequency shift ( ⁇ f) and a dielectric property (e.g. permittivity e r ) for calibration reference samples.
- the operation of Model calibration curve generator 310 is further described with reference to figures 12 and 13.
- Probe calibration curve generator 320 and Test sample calibration curve generator 330 generate calibration curves drawn from the model calibration curves and a geometric descriptor value of the probe tip 185.
- the calibration curves show the relationship between a resonant frequency shift ( ⁇ f) measured during scanning and a dielectric property (e.g. permittivity e r ) at a geometric descriptor value of the actual NSMM used in imaging.
- the calibration curve allows a dielectric property to be determined by finding the point on the curve corresponding to the resonant frequency shift measured during scanning.
- the operation of Probe calibration curve generator 320 and Test calibration curve generator 330 is further described with respect to figures 9, 12, 14 and 17. It is helpful to begin with discussion of quantitative modeling according to the present invention with reference to figures 4 to 8, and 16. Operation of the present invention is then further described with respect to figures 9-15.
- V 2 ⁇ + — (V ⁇ ) - (V£i.) 0 (1)
- the boundaries of the grid should be sufficiently far away in order to minimize the effect of the chosen boundary conditions on the electric field near the probe tip. To accomplish this, outside a region close to the probe tip, the values of ⁇ r and ⁇ z continuously increase with distance away from the probe tip, allowing the outer radius of the grid to be at least 4 mm, and the height of the grid to be 2 mm.
- the resulting grid consists of 84 x 117 cells, which is small enough to be a manageable calculation with a modern personal computer.
- ⁇ 0 is used for the boundary condition. To match this condition, the sample is placed on top of a metallic layer for scanning; this has the added benefit of shielding the microscope from the effects of whatever is beneath the sample, which could be difficult to model.
- Two possible fitting parameters for the model are the geometry descriptor, i.e., aspect ratio ⁇ , and the radius r 0 of the blunt probe end.
- ⁇ is small, for example less than 1.5, the probe tip is considered to be blunt.
- oc large, for example greater than 1.5, the probe tip is considered to be sharp.
- FIG. 4 illustrates the frequency shift during an unperturbed state, i.e., no sample present and a perturbed state, i.e., sample present beneath the probe.
- the width of the minima change with respect to the changes in quality factor (Q).
- Q quality factor
- FIG. 6 illustrates the electric fields 605 present when a bulk sample 610 is scanned beneath probe tip 185.
- FIG. 7 illustrates the modeling of thin films.
- the finite element model is extended to include a thin film 710 on top of a dielectric substrate 715 having the same thickness as the model samples.
- the only perturbation is the thin film (the change in total thickness of the sample is negligible compared to the thick substrate).
- the electric field 705 in the thin film sample is calculated using the finite element model of the present invention and Eq. (3) to calculate Af, integrating only over the volume of the thin film.
- the thin film model is used to obtain a functional relationship between ⁇ and e r of the thin film.
- samples are chosen so as to cover a range of permittivity values in which the dielectric permittivity of an unknown sample is expected to fall within.
- the known values e r and t are chosen so as to cover a range of permittivity values in which the dielectric permittivity of an unknown sample is expected to fall within.
- the electric field configuration data files are usable in cases where the dielectric permittivity for an unknown sample can be expected to be between 10 and 200.
- a method for an embodiment of the present invention is illustrated by flowchart 900 of FIG. 9.
- the method begins with a step 905.
- system 100 is calibrated according to the probe calibration routine described in FIG. 10 to obtain calibration sample frequency shift values (M sampleC ), a probe tip geometry descriptor, and sample geometry.
- M sampleC calibration sample frequency shift values
- probe tip geometry descriptor a probe tip geometry descriptor
- a test sample 125 with unknown dielectric properties is scanned according to the routine described in FIG. 11 to obtain test sample resonant frequency shift measurements ( ⁇ f samp ⁇ eT ). These measurements can also include determining quality factor (Q), and/or tunability information. If the test sample is a thin film then it contains both a dielectric thin film and substrate. Step 915 will now be described with reference to the steps provided in FIG. 11.
- the method begins with a step 1105.
- a resonant frequency of the near- field scanning microwave microscope is selected.
- a test sample is placed on the microscope stage.
- the probe tip is moved into contact with the test sample.
- a step 1125 raster scanning begins.
- a position value corresponding to the initial point of contact with the test sample is stored in computer 105 memory as the next scanning point.
- the probe is moved to a predetermined background measurement position where the calibration sample no longer perturbs the resonator.
- the predetermined background measurement position can be a height 1.5 times greater than the diameter of the microscope transmission line 135 , or a height at least approximately 3 millimeters above the calibration sample .
- a background resonant frequency shift measurement is taken from the background measurement position.
- the probe tip is moved back into contact with the test sample at the next scanning point.
- the contact resonant frequency shift at the scanning point is measured.
- the difference between the contact resonant frequency shift at the scanning point and the background resonant frequency shift is calculated.
- the calculated difference is saved in computer 105 memory as the test sample resonant frequency shift value.
- a step 1165 the microscope probe tip is moved to the next scanning position.
- a step 1170 comp ⁇ ter 105 determines if the next scanning position is the end of a scan line. If the end of a scan line has not been reached then steps 1150 through 1165 are repeated.
- computer 105 determines if the next scanning position is the end of a scan area. If it is not then steps 1135 through 1170 are repeated until the end of a scan area has been reached.
- a set of test sample resonant frequency values have been recorded or stored in computer 105 memory.
- a step 920 the calibration sample resonant frequency shift values obtained from step 910 are used to generate a probe calibration curve according to the routine described in FIG. 12.
- a step 925 a determination of whether the test sample is a thin film is made.
- a step 930 a determination of whether all of the calibration samples have the same thickness as the test sample is made.
- test sample is not a thin film, and all of the calibration samples have the same thickness as the test sample, then in a step 945, one is able to determine an unknown dielectric property for a sample by first retrieving a test sample resonant frequency shift value ( ⁇ f sa ⁇ p , eT ) obtained in step 915 and then locating the corresponding ⁇ f value on the probe calibration curve resulting from step 920.
- the dielectric property of the test sample is equal to the dielectric property corresponding to the ⁇ f value on the probe calibration curve resulting from step 920. If the test sample is a thin film, or if only one calibration sample has the same thickness as the test sample, then in a step 935 a test sample calibration curve is generated.
- a step 940 one is able to determine an unknown dielectric property for a test sample by first retrieving a test sample resonant frequency shift value ( ⁇ f sampleT ) obtained in step 915 and then locating the corresponding ⁇ f value on the test sample calibration curve resulting from step 940.
- the dielectric property of the test sample is equal to the dielectric property corresponding to the ⁇ f value on the test sample calibration curve.
- the process concludes with a step 950.
- step 920 can be performed prior to step 915.
- step 910 can be performed after step 915 but before step
- steps 1135, 1140, and 1145 could alternatively be measured at each point on the sample, any desired number of times during the scan, before the scan, or after the scan.
- the NSMM is calibrated to determine the parameter using at least two samples with known permittivity ( ⁇ r ) and thickness (t).
- the thickness of the thin film is referred to as the second determined thickness.
- the process of calibrating system 100 is illustrated by flowchart 1000 of FIG. 10.
- the process starts at a step 1010.
- At a step 1015 at least two calisation samples that have known dielectric properties are selected.
- At least two of the calibration samples have the same approximate thickness with one another.
- at least one of the calibration samples has the same approximate thickness as the test sample with first determined thickness and unknown dielectric properties. If the test sample contains a thin film, an additional requirement is that the at least one calibration sample with approximate thickness equal to the test sample first determined thickness have the same permittivity as the substrate of the test sample.
- each selected calibration sample is scanned according to the scanning routine described in FIG. 11 to determine respective sets of resonant frequency shift information for samples with known dielectric permittivity values.
- the method begins with a step 1105.
- a resonant frequency of the near-field scanning microwave microscope is selected.
- a calibration sample is placed on the microscope stage.
- the probe tip is moved into contact with the calibration sample.
- a step 1125 raster scanning begins.
- a position value corresponding to the initial point of contact with the calibration sample is stored in computer 105 memory as the next scanning point.
- a step 1135 the probe is moved to a predetermined background measurement position where the calibration sample no longer perturbs the resonator.
- the predetermined background measurement position can be a height 1.5 times greater than the diameter of the microscope transmission line 135, or a height at least approximately 3 millimeters above the calibration sample.
- a background resonant frequency shift measurement is taken from the background measurement position.
- the probe tip is moved back into contact with the calibration sample at the next scanning point.
- the contact resonant frequency shift at the scanning point is measured.
- a step 1 155 the difference between the contact resonant frequency shift at the scanning point and the background resonant frequency shift is calculated.
- a step 1160 the calculated difference is saved in computer 105 memory as the calibration sample resonant frequency shift value.
- a step 1165 the microscope probe tip is moved to the next scanning position.
- computer 105 determines if the next scanning position is the end of a scan line. If the end of a scan line has not been reached then steps 1150 through 1165 are repeated.
- a step 1175 computer 105 determines if the next scanning position is the end of a scan area. If it is not then steps 1135 through 1170 are repeated until the end of a scan area has been reached. Step 1020 is repeated for each calibration sample.
- a geometry descriptor of the probe tip is determined.
- the geometry descriptor can be input by a user or calculated by System 100.
- a geometry descriptor can be any descriptor representative of the geometry of the probe tip. Accordingly, in one embodiment of the present invention, a geometry descriptor is referred to as a firstprobe tip geometry descriptor value and a second probe tip geometry descriptor value.
- sample geometry data is input. For example, with bulk samples, sample geometry data includes the thickness of the sample. For thin film samples on a bulk substrate, the thickness of the thin film is provided as well.
- FIG 12 describes the routine for generating a calibration curve.
- the routine begins at a step 1205.
- electric field configuration data is stored as described in FIG 8.
- the stored files contain data for model samples having approximately the same thickness as the calibration sample scanned in step
- model calibration curves are generated by reading from at least two of the previously stored electric field configuration data files, electric field values and permittivity values for at least two respective probe tip geometry descriptor values.
- a point on the first model calibration curve is then generated by solving the equation
- a calibration curve is generated using the model calibration curves from step 1215 and the calibration sample frequency shift values from step 1020.
- a point on the calibration curve is generated by first calculating the difference between two calibration sample frequency shift values.
- One of the calibration frequency shift values used in the calculation should correspond to zero point permittivity value from step 1215.
- the difference value Once the difference value has been determined it can be plotted with respect to the ⁇ f axis of the model calibration curve.
- the value for ⁇ for the probe is determined by observing the position of the curve C p relative to the curves C ⁇ and C ml .
- test sample calibration curve must be generated, in step 935.
- test sample calibration curve C ⁇ is shown in FIG. 17.
- the curve C ⁇ is used in step 940 to convert the frequency shift values obtained in step
- the advantage of the second method is that generating the curves C tel and 0 ⁇ 2 can be done in advance just once, requiring less calculation for each scan.
- the curves in FIG 17 are calculated using the same method as was performed in the previous section with the probe calibration curve. The difference is that a new set of files (represented in FIG. 8) are used, which represent a sample thickness equal to the test sample thickness.
- the curves C al and C ⁇ 2 in FIG. 17 are calculated according to the routine described in FIG. 12. However, a different set of files represented in FIG. 8 is now used.
- the files represent a thin film having a thickness equal to the second determined thickness of the thin film in the test sample.
- the volume V s is the volume of the thin film, rather than the volume of the entire sample.
- FIG. 15 illustrates how electric field-dependent imaging can be accomplished by applying a voltage bias (V b ) 1505 to the probe tip via a bias tee 180 in the resonator according to a further feature of the present invention.
- a metallic layer 1520 beneath the thin film 1510 acts as a grounded counterelectrode.
- a sample 125 can be a dielectric thin film 1510.
- the dielectric thin film 1510 is disposed on a grounded counterelectrode 1520.
- the grounded counterelectrode 1520 is provided on a substrate 1530.
- the inventors use a high-sheet-resistance counterelectrode, making it virtually invisible to the microwave fields. As a result, the presence of the thin-film counterelectrode 1520 can be safely ignored in the finite element model described above. Because the counterelectrode 1520 is immediately beneath the dielectric thin film, the applied electric field is primarily in the vertical direction, unlike the microwave electric field, which is mainly in the horizontal direction for thin films with large permittivities.
- E is the rf electric field in the r direction
- E 3 E b is the applied bias electric field in the z direction.
- V ⁇ n + c T7 dc +
- the components of the frequency shift signal at ⁇ b and 2 ⁇ b can be extracted to determine the nonlinear permittivity terms e n3 and e U33 .
- These nonlinear terms can be measured simultaneously with the linear permittivity (e n ) while scanning.
- the electric field E ⁇ could be applied in the horizontal direction using thin film electrodes deposited on top of the dielectric thin film.
- the advantage here is that diagonal nonlinear permittivity tensor terms could be measured, such as e l u and e n ] 1 ; the disadvantage in this case is that imaging is limited to the small gap between the electrodes. Simultaneously Measuring Sample Topography
- sample topography is accomplished by measuring the deflection of the sample holder during a scan. Because the probe tip is held fixed, the sample holder will deflect depending on the topography of the sample. For example, if the sample has a bump on top of it, the sample holder will deflect downward. One can record this deflection during a scan, and obtain a topographical image corresponding to the same region as the microwave image(s).
- the measurement of the deflection of the sample holder could be accomplished using one of many techniques, including an optical sensor, a capacitive sensor, an interferometer, etc.
- the microwave microscope as covered in patent 5,900,618, consists of a resonator contained in a microwave transmission line.
- One end of the resonator is an open-ended coaxial probe, which is held close to the sample, and the other end is coupled to a microwave source with a coupling capacitor.
- a sample is scanned beneath the probe. Because of the concentration of the microwave fields at the probe center conductor, the resonant frequency and quality factor Q of the resonator are perturbed depending on the properties of the sample near the probe center conductor.
- One quantity recorded while scanning is the resonant frequency shift ( ⁇ f) of the resonator.
- Two modes of operation are non-contact mode and contact mode.
- non-contact mode the preferred embodiment is with the probe center conductor flush with the face of the probe, so that the end of the center conductor is in the same plane as the end of the outer conductor.
- a sample is scanned beneath the probe with a small gap of 10-100 ⁇ m between the probe and the sample.
- contact mode imaging the center conductor extends beyond the outer conductor, and has a sharp point. The sample holder gently presses the sample against the probe tip with a small force.
- the invention involves calibration using dielectric samples with known permittivity.
- the calibration data is interpolated, allowing one to scan dielectric samples with the same thickness as the calibration samples, and to convert the microscope frequency shift into the local permittivity of the sample.
- contact-mode imaging a physical model is used to generate the relationship between the frequency shift of the microscope and the local permittivity of the sample. Because of the use of the model with contact- mode imaging, quantitative imaging in this case is not limited to samples which have the same thickness as the calibration samples.
- the contact-mode imaging can be used for both bulk and thin-film samples.
- a low-frequency electric field can also be applied to the sample, so that permittivity can be measured as a function of the applied electric field.
- permittivity can be measured as a function of the applied electric field.
- dielectric nonlinearity can be measured as well as the linear permittivity.
- an optical sensor When scanning in contact mode, an optical sensor can be used to measure the deflection of the sample holder, and hence, the sample, as the sample is scanned in contact with the probe tip.
- the deflection is exactly equal to the topographic changes in the sample.
- the sample topography can be imaged simultaneously with the permittivity.
- the local dielectric constant of a material is determined by measuring the frequency shift of the microscope as a function of height above the sample. Areas as small as 100 ⁇ m in diameter can be measured. An unknown sample is scanned and a dielectric constant is measured as a function of position as long as the height of the probe above the sample is accurately known.
- the technique can be performed quickly and at many locations on a bulk dielectric material.
- the techniques can be done over a very broad range of frequencies simply by choosing other resonant modes of the microscope. In principle one can measure between about 100 MHz and 50 GHz.
- the technique can be applied over a broad range of temperatures, from 1.2K to well above room temperature, possibly as high as 1000°C.
- a non-contact technique for imaging dielectric constant using a resonant near-field scanning microwave microscope is provided.
- the inventors scanned seven samples with dielectric constants e r ranging from 1 to 230, using a 480 ⁇ m diameter probe at a height of 100 ⁇ m and a frequency of 9.08 GHz.
- resonant near-field scanning microwave microscope consists of a lm long coaxial transmission line which is capacitatively coupled to a microwave source at one end and terminated by an open-ended coaxial probe at the other end.
- This arrangement creates a resonant circuit in which the resonant frequency f 0 and quality factor Q are modified when a sample approaches the open end of the probe (see inset in Fig. 18).
- the invention keeps the microscope source locked on resonance.
- the shift of the system's resonant frequency ⁇ f as the sample under the probe is scanned.
- the variations in ⁇ f are directly related to spatial variations in dielectric constant in the sample. In addition, however, topographic changes will also give rise to changes in ⁇ f.
- the inventors constructed a test sample by placing six pieces of different dielectric material into the bottom of a square plastic mould and pouring epoxy into the mould. In addition, silicone adhesive was used to hold each piece down. After the epoxy cured, the test sample was removed from the mould, polished, and positioned on the XY table. The materials embedded in the epoxy were silicon, glass microscope slide, SrTiO 3 , Teflon, sapphire, and LaAlO 3 . All six pieces were approximately 500 ⁇ m thick and about 6 mm x 8 mm in size. The overall thickness of the test sample was 6 mm.
- the frequency shift ⁇ f versus height h above the six pieces having dielectric constants ranging from 2.1 to about 230 is measured.
- the inventors also tested the epoxy which has an unknown dielectric constant.
- Each piece, as well as the probe, was flat and smooth on the scale of 5 ⁇ m as judged by an optical microscope.
- a probe with a 480 ⁇ m center conductor diameter and a source frequency of 9.08 GHz was used in one example of implementation.
- the probe was first brought in contact with a dielectric sample and the frequency shift ⁇ f was recorded as the height was systematically increased. The results are plotted in Fig. 18. Samples with the largest dielectric constant produced the largest frequency shift, as expected.
- the frequency shift is essentially zero above 1 mm and saturates when the probe-sample distance is smaller than a few microns.
- the inventors used the above information to construct an empirical calibration curve that directly relates the frequency shift to the dielectric constant e r .
- f d ⁇ f(h 2 )- ⁇ f(h,)
- h 2 is far away (h 2 >1000 ⁇ m).
- each calibration curve is set with an empirical function (solid lines in Fig. 19), allowing us to easily transform any measured frequency shift to a dielectric constant. From these curves one can see that one can enhance the sensitivity to the dielectric constant considerably by using a small probe height. On the other hand, at closer probe-sample separations the influence of topographic features will be enhanced.
- the inventors next scanned a single sample of LaAlO 3 which had an 8 x 5 mm triangular shape and a thickness of 510 ⁇ m.
- the inventors placed the sample directory on the metal scanning table and recorded the frequency shift as a function of position.
- the data was taken at 9.08 GHz using the 480 ⁇ m probe at heights of 100 ⁇ m and 1.1 mm.
- the two data sets are subtracted and a 100 ⁇ m calibration curve is used to transform the resulting frequency shift image into a dielectric constant image.
- Figure 20 shows the resulting contour image of dielectric constant versus position.
- the dielectric constant varies from about 20 to 25 over the sample and equals 1 when the probe is away from the sample.
- the main variation in er over the sample is due to a slight tilt in the sample surface of about 20 ⁇ m.
- the edges of the sample show a smaller value of er due to averaging over the inner conductor of the probe.
- the width of the affected region is in good agreement with the expected spatial resolution of about 500 ⁇ m.
- the inventors next recorded a frequency shift image of the six-piece test sample using a probe-sample separation of 100 ⁇ m and the 480 ⁇ m diameter probe at 9.08 GHz.
- the frequency shift image is transformed into a dielectric constant image (see Fig. 22a).
- the darker regions in Fig.22a indicate a higher dielectric constant (larger frequency shift) and the lighter regions indicate a smaller dielectric constant (smaller frequency shift).
- Figure 22b shows the corresponding surface plot representation. Note that the z- axis in Fig. 22b uses a logarithmic scale to allow us to show the large range of dielectric constants present in the sample.
- Fig. 21 summarizes the dielectric constants for the six test materials and provides comparative data taken from literary sources.
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Priority Applications (4)
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AU40709/00A AU4070900A (en) | 1999-09-10 | 2000-04-05 | Quantitative imaging of dielectic permittivity and tunability |
JP2001523885A JP2003509696A (en) | 1999-09-10 | 2000-04-05 | Quantitative imaging of dielectric permittivity and tunability |
EP00920123A EP1212625A1 (en) | 1999-09-10 | 2000-04-05 | Quantitative imaging of dielectric permittivity and tunability |
US10/069,996 US6809533B1 (en) | 1999-09-10 | 2000-04-05 | Quantitative imaging of dielectric permittivity and tunability |
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US15335499P | 1999-09-10 | 1999-09-10 | |
US60/153,354 | 1999-09-10 | ||
US19190300P | 2000-03-24 | 2000-03-24 | |
US60/191,903 | 2000-03-24 |
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EP (1) | EP1212625A1 (en) |
JP (1) | JP2003509696A (en) |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004088668A2 (en) * | 2003-03-31 | 2004-10-14 | Siemens Aktiengesellschaft | Device and method for determining an electrical property of a sample |
JP2008046138A (en) * | 2001-09-10 | 2008-02-28 | Pioneer Electronic Corp | Dielectric constant measuring device, dielectric measuring method, and information recording/reproducing device |
CN107991539A (en) * | 2018-01-31 | 2018-05-04 | 中国地质科学院地球物理地球化学勘查研究所 | Dielectric constant measuring apparatus and its system |
CN111351807A (en) * | 2020-04-18 | 2020-06-30 | 李赞 | Dielectric spectroscopy microscopy using near-field microwaves |
CN113916967A (en) * | 2021-09-28 | 2022-01-11 | 中山大学 | Method for imaging and detecting subsurface |
CN114895106A (en) * | 2022-03-28 | 2022-08-12 | 电子科技大学 | Resistivity measuring method based on near-field scanning microwave microscope |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4732201B2 (en) * | 2006-03-17 | 2011-07-27 | キヤノン株式会社 | Sensing device using electromagnetic waves |
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WO1999016102A1 (en) * | 1997-09-22 | 1999-04-01 | The Regents Of The University Of California | Scanning evanescent electro-magnetic microscope |
US5900618A (en) * | 1997-08-26 | 1999-05-04 | University Of Maryland | Near-field scanning microwave microscope having a transmission line with an open end |
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- 2000-04-05 JP JP2001523885A patent/JP2003509696A/en not_active Withdrawn
- 2000-04-05 WO PCT/US2000/008943 patent/WO2001020352A1/en active Search and Examination
- 2000-04-05 AU AU40709/00A patent/AU4070900A/en not_active Abandoned
- 2000-04-05 EP EP00920123A patent/EP1212625A1/en not_active Withdrawn
Patent Citations (2)
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US5900618A (en) * | 1997-08-26 | 1999-05-04 | University Of Maryland | Near-field scanning microwave microscope having a transmission line with an open end |
WO1999016102A1 (en) * | 1997-09-22 | 1999-04-01 | The Regents Of The University Of California | Scanning evanescent electro-magnetic microscope |
Non-Patent Citations (2)
Title |
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C.GAO ET AL.: "Quantitative microwave near-field microscopy of dielectric properties", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 69, no. 11, November 1998 (1998-11-01), US, pages 3846 - 3851, XP002144502 * |
TABIB-AZAR M ET AL: "NOVEL PHYSICAL SENSORS USING EVANESCENT MICROWAVE PROBES", REVIEW OF SCIENTIFIC INSTRUMENTS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 70, no. 8, August 1999 (1999-08-01), pages 3381 - 3386, XP000870710, ISSN: 0034-6748 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008046138A (en) * | 2001-09-10 | 2008-02-28 | Pioneer Electronic Corp | Dielectric constant measuring device, dielectric measuring method, and information recording/reproducing device |
WO2004088668A2 (en) * | 2003-03-31 | 2004-10-14 | Siemens Aktiengesellschaft | Device and method for determining an electrical property of a sample |
WO2004088668A3 (en) * | 2003-03-31 | 2005-07-07 | Siemens Ag | Device and method for determining an electrical property of a sample |
CN107991539A (en) * | 2018-01-31 | 2018-05-04 | 中国地质科学院地球物理地球化学勘查研究所 | Dielectric constant measuring apparatus and its system |
CN107991539B (en) * | 2018-01-31 | 2024-01-30 | 中国地质科学院地球物理地球化学勘查研究所 | Dielectric constant measuring device and system thereof |
CN111351807A (en) * | 2020-04-18 | 2020-06-30 | 李赞 | Dielectric spectroscopy microscopy using near-field microwaves |
CN113916967A (en) * | 2021-09-28 | 2022-01-11 | 中山大学 | Method for imaging and detecting subsurface |
CN114895106A (en) * | 2022-03-28 | 2022-08-12 | 电子科技大学 | Resistivity measuring method based on near-field scanning microwave microscope |
CN114895106B (en) * | 2022-03-28 | 2023-04-07 | 电子科技大学 | Resistivity measuring method based on near-field scanning microwave microscope |
Also Published As
Publication number | Publication date |
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EP1212625A1 (en) | 2002-06-12 |
JP2003509696A (en) | 2003-03-11 |
AU4070900A (en) | 2001-04-17 |
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