WO2001006320A1 - Masque a dephasage generique - Google Patents

Masque a dephasage generique Download PDF

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Publication number
WO2001006320A1
WO2001006320A1 PCT/US2000/018331 US0018331W WO0106320A1 WO 2001006320 A1 WO2001006320 A1 WO 2001006320A1 US 0018331 W US0018331 W US 0018331W WO 0106320 A1 WO0106320 A1 WO 0106320A1
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WO
WIPO (PCT)
Prior art keywords
areas
mask
strong phase
phase shifting
light
Prior art date
Application number
PCT/US2000/018331
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English (en)
Inventor
Marc Levenson
Original Assignee
Marc Levenson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/428,308 external-priority patent/US6287732B1/en
Priority claimed from US09/428,309 external-priority patent/US6251549B1/en
Application filed by Marc Levenson filed Critical Marc Levenson
Publication of WO2001006320A1 publication Critical patent/WO2001006320A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Definitions

  • the field of the invention is the field of lithography, and particularly photolithography for use in semiconductor, magnetic recording, and micromachining applications.
  • This invention relates to the field of microlithography for the manufacture of integrated circuits, magnetic devices, and other microdevices such as micromachines.
  • the final product is manufactured in sequential manner in which various patterns are first produced in a "resist" material with each pattern subsequently defining a product attribute.
  • the "resist” materials generally polymer compositions, are sensitive to light or other forms of radiation.
  • the patterns are formed in the resist by exposing different regions of the resist material to different radiation doses. In the bright (high dose) regions, chemical changes take place in the resist that cause it to dissolve more easily (for positive resists) or less easily (negative resists) than in dim (low dose) regions.
  • the bright and dim regions are formed using an exposure tool which generally transfers corresponding features to the resist from a mask or reticle.
  • the masks or reticles are formed from mask blanks, which are plates of quartz coated with an opaque material such as chrome. The chrome is etched away in a pattern to form the mask.
  • the radiation employed may be (but is not limited to) ultraviolet light and x-rays, and the regions of the mask that are opaque and transparent form a pattern of bright and dark when illuminated uniformly.
  • a projection lens forms an image of the mask pattern in the resist film on a planar substrate. That image comprises the high and low dose regions that produce the resist pattern. When some form of light is employed in this process, it is called photolithography.
  • Wavefront engineering The patterns formed in the resist are not identical to those on the mask, and the methods of obtaining the pattern desired for the ultimate manufactured device in spite of deficiencies in the microlithography process is called “wavefront engineering.”
  • PSM phase shifting masks
  • Phase shift masks were first published by the inventor of the present invention in a paper entitled “Improving resolution in photolithography with a phase shifting mask, " M. D. Levenson, N. S. Viswanathan, and R. A. Simpson, IEEE Trans. Electron Devices ED-29, 1828-1836 (1982). Since that time, there have been hundreds of patents and thousands of papers issued containing the phrase "phase shift mask”.
  • the present invention shows a way to produce phase shift masks in a cost-effective way, so that the same phase shift mask substrate design may be used with many different device designs by trading off maximum density of features on a device with cost for low volume runs.
  • weak-PSMs such as the
  • Attenuated-PSM and strong-PSMs such as the Alternating-Aperture-PSM. These two differ in that the weak-PSMs have only one type of bright feature, while the strong-PSMs contain two types of bright features identical except for the optical phase, which differs by -180°. See, for example, M. Shibuya, Japanese Patent Showa 62-50811, M.D. Levenson et. al. IEEE Trans. Elect. Dev. ED-29, 1828-1836 (1982), and M. D. Levenson , Microlithograpy World 6-12 (March/April 1992).
  • Figure 1 shows plan, side elevation (along cut A) , and end elevation (along cut B) views of the result of steps in construction of an alternating aperture PSM as currently implemented commercially.
  • a substrate 10 is made of a material such as a fused quartz plate or other stable material which must be transparent to the light used in the photolithography for a transmission mask .
  • the substrate 10 coated with an opaque (“chrome") film 12 in which openings 14 and 16 have been opened by normal photoresist application, exposure, and development, followed by chrome etch to form a conventional chrome-on-glass (COG) photomask. After stripping the original photoresist, he photomask is then recoated with a resist film (hatched areas 22 of Fig.
  • apertures 20 are opened in the resist film at the locations of apertures 14 which will be phase-shifted.
  • the openings in this second resist film are larger than those in the underlying chrome to accommodate possible mis-registration.
  • the photomask is then etched and the chrome 12 exposed in the resist openings is used as a mask to etch the underlying substrate 10 to a depth d below the original surface to make depressions 24 as shown in the view of figs. 2(A-C) taken after etching of the substrate 10.
  • the depth d of the features 24 etched in the substrate 10 is carefully chosen in on the basis of the wavelength of the light to be used in the photolithography and the difference in the index of refraction of the material of the substrate and the ambient atmosphere in which the phase shift mask is used.
  • FIG. 3 A plan view of the etched substrate 10 of fig. 2 A with the chrome removed is shown in fig. 3 where the hatched areas 32 correspond to the etched phase-shifted apertures 24 in figure 2.
  • the substrate 10 etched and patterned as shown in figure 2 defines a small part of a phase shift mask used to produce patterns in a photoresist.
  • the difference in phase velocities of radiation in the air and in the substrate 10 material produces a 180 ° phase shift in the light passing through regions 16 and regions 20 of the phase shift mask shown in figs. 2(A-C), (with photoresist removed), which result in destructive interference and which cancels the light amplitude in the region between regions 16 and 24.
  • alternating aperture-PSM refers to the fact that the transparent apertures on opposite sides of a dark line have alternate (0°-180 °) phases. T h e alternation in phase between otherwise identical apertures doubles the period of the optical amplitude pattern which corresponds to a given intensity pattern.
  • a given projection exposure tool can create resist patterns smaller by a factor of 2 (or more) when using an alternating aperture PSM, and dramatically increase the depth of focus.
  • robust isolated dark lines characteristic of transistor gates can be made 3X thinner, dramatically increasing circuit speed.
  • Fig.4 shows the pattern of exposed photoresist 44 and unexposed photoresist 42 resulting when light passing through the regions 16 and 20 of the mask of fig. 2.
  • the pattern shown in fig. 4 is typically 4 or 5 times smaller than the pattern of the mask shown in fig. 2 A.
  • the width 40 of the exposed areas of the photoresist is typically greater than the wavelength of the light used for exposure.
  • the pattern of phase-shifting is different from that of the open (non phase shifted) apertures and must be customized for each mask of each product. Such masks require multiple customized patterns to be written on each mask substrate.
  • the substrate of the prior art may or may not be etched back laterally under the opaque film as shown in fig. 5, thus possibly leaving the opaque film unsupported at the edge 50.
  • the non phase shift apertures 52 and 54 and the phase shift apertures 58 are noted.
  • the trenches 56 and 58 etched in the substrate beneath the apertures are necessarily formed after the apertures are etched in the opaque layer, which is a high-cost process.
  • the requirement to form a second custom pattern - by a process that can result in uncorrectable defects - significantly raises the cost of producing alternating aperture-PSMs.
  • the design cost is also larger than for conventional masks as at least two mask patterns (one for brightness and one for phase) must be designed and checked for each circuit level.
  • U.S. Patent 5,807,649 teaches a double exposure system for exposing a photoresist using a phase shift mask and with a second mask to expose unwanted dark areas left by the phase shift mask.
  • U. S. Patent 5,620,816 teaches a double exposure system where a chromeless phase-edge shift mask is used to expose all of the photoresist except on lines running in rows and/or columns, and then a customized mask is used to expose unwanted portions of the lines and/or columns.
  • the chromeless phase shift mask method is deficient in that the width of the unexposed lines can not be controlled, and that the unexposed lines are not totally unexposed as is shown by the 4.69% (of presumed flood exposure) shown.
  • Chromeless masks typically have a minimum exposure in the phase shift areas of 10% or more. This problem is worsened as the masks and optics accumulate dirt in the real world of manufacturing.
  • the chromeless mask is also deficient in that defects in the etched and non etched areas generally may not be repaired.
  • the chromeless mask is deficient in that the exposure region where two or four chips meet on the wafer is typically overexposed by a factor two or four and the resist "blows out" for a region about these areas.
  • the chromeless mask of the above patent is deficient in that the crossing lines left unexposed may degrade device performance.
  • the chromeless mask of the U. S. Patent 5,620,816 may only be used to define a set of lines, and not of features typically needed in lithographic patterns.
  • the phase shift mask of the above identified patent is suited to double expose a series of perpendicular lines using the same or a similar mask rotated, and then to further expose some of the unexposed array of points to make a contact pattern.
  • EDA Electronic Design Automation
  • Patent 5,858,580 has demonstrated the In-Phase design system which employs a block-out mask similar in geometry to the ultimate circuit feature along with an alternating-aperture PSM composed of pairs of small apertures (shifters), one of which has 0° phase, while the other has 180° - which define the narrowest dark features between them.
  • ASICs Application-specific integrated circuits
  • the present invention is a method of patterning alternating-aperture phase-shifting masks for low density circuits which realizes the full advantage of previous PSM techniques, while dramatically reducing costs. It is especially suitable for ASICs, but may also be useful for larger-volume circuits.
  • OBJECTS OF THE INVENTION It is an object of the invention to provide a method, an apparatus, and a system for phase shift lithography which dramatically lowers costs for strong phase shift masks.
  • Fig. 1 shows a plan, side elevation, and end elevation result of steps in construction of an prior art alternating aperture phase shift mask (PSM).
  • PSM phase shift mask
  • Fig. 2 (A-C) shows a prior art PSM.
  • Fig. 3 (A-B) show plan and elevation views of the substrate of fig. 2.
  • Fig. 4 shows an exposure pattern of the PSM of fig. 2.
  • Fig. 5 shows an elevation view of a prior art PSM.
  • Fig. 6 shows an elevation view of the PSM of the invention.
  • Fig. 7 shows a preferred embodiment of the generic substrate of the invention.
  • Fig. 8 shows a preferred embodiment of the generic substrate of the invention.
  • Fig. 9 shows a preferred embodiment of the generic substrate of the invention. shows a patterned opaque layer of the generic PSM of the invention. shows the registration of the pattern of fig. 10 with respect to a feature of fig. 9. shows an exposure pattern of the PSM of fig. 10. shows a non phase shift mask opaque pattern. shows the registration of the projected pattern of fig. 13 and fig. 10. shows the exposure pattern of a double exposure patterns of fig. 13 and fig. 10. shows the pattern of active areas of a silicon device. shows the registration of the patterns of figs. 15 and 16. shows the PSM of fig. 6 covered with photoresist. shows the PSM of fig. 6 covered with two layer photoresist. shows the PSM of fig. 19 exposed, developed, and etched.
  • FIG. 20 shows the intensity of light falling on photoresist exposed through the PSM of fig. 20. shows a preferred embodiment of a PSM blank. shows the personalized PSM blank of fig 22. shows a preferred embodiment of a generic substrate. shows a preferred embodiment of a generic substrate. shows a plan view of a generic phase shift mask blank. shows a plan view of a generic substrate. shows a plan view of an exposure pattern. shows a plan view of an exposure pattern at right angles to fig. 28. shows a plan view of a double exposure pattern of figs. 28 and 29. shows a plan view of a generic substrate. shows a plan view of a generic substrate. shows a plan view of a generic substrate. shows a plan view of a generic substrate. shows sketch of the system of the invention. DETAILED DESCRIPTION OF THE INVENTION
  • the invention is a generic phase shift mask blank and the method of designing a device, patterning the phase shift mask, and a system for producing a device using the patterned phase shift mask.
  • the phase shift mask blank consists of a substrate with an array of phase shift areas 5 produced in the surface of the substrate, and a covering or film of opaque material covering substantially all of the phase shifting areas of the mask as is shown in partial cross section in fig. 6.
  • a generic phase shift mask substrate 60 is shown covered with an opaque film 62. Areas of 0° and 180° phase shift 16 and 20 are shown. Potentially opaque registration marks (not shown) in registration with the boundaries between the 0° and 180° phase areas may be located as needed
  • registration marks may be etched in the opaque film at the same time that apertures are opened in the opaque film as will be described later.
  • Such generic substrates When coated with a continuous opaque film, such generic substrates form a generic phase shift mask blank.
  • a generic substrate is produced having patterns such as shown cross section in fig. 6, and in different embodiments as possible plan views 7- 9, 27, and 31-33.
  • the entire substrate surface of the mask area may be covered by such uniform arrays of areas 16 and 20 which have phase shifts for light approximately (within
  • the features form a regular array or arrays, but irregular sets of features may be used for some particular purposes.
  • the area of the phase shift mask is here defined as the area which corresponds to the device being manufactured, and does
  • the generic phase shift mask blank then defines the possible position of small features to be produced with generic phase shift mask technology, and the placement of particular features is determined by recording the positions of the boundaries of the adjacent phase shift areas, and designing or adjusting the design of the device accordingly .
  • the generic phase shift mask blank substrates may be produced with standard photoresist exposure, development, and etch procedures using quartz plates, or may be produced in an 5 inventive embodiment by molding or stamping of materials such as sol gel materials, xerogel materials, metals, or polymer materials, as shown in T. Ramos et al., Proc. of Dielectrics for ULSI Multilevel Interconnection Conference, PP 106-113, (1997). It is known in the art of compact disk production that a particular feature is reproduced in polycarbonate material with resolution under 10 nm. Stamping or molding the generic substrate cuts the cost of such substrates
  • masks for soft x-ray phase shift lithography which are reflection masks could use the embossed substrates of metal or polymer which are not transparent to short wavelength radiation.
  • phase shift mask An embodiment of the use of a generic phase shift mask is shown in the series of figures starting with one of the phase shift masks having patterns such as shown in figs. 7-9, and opening
  • the exposed photoresist is shown by the open areas 120 of fig. 12 in the middle of the unexposed areas 122.
  • the fine line features 124 left by the results of the phase shift are also depicted.
  • a second exposure with a conventional photomask shown in fig. 13 registered with respect to the pattern 102 as shown in fig. 14 leaves a pattern of unexposed photoresist 150 shown in fig. 15.
  • a preferred embodiment of the invention is shown in figs. 18-20, where the generic mask of fig. 6 is coated with a optical or e-beam resist 180 which may be in two layers 190 and 192 as shown in fig. 19. The resist is exposed and developed as shown in fig. 20, and the chrome layer
  • the exposure intensity / is shown as a function of distance in fig. 21. Leaving chrome 200 on the phase mask edge 202 and adjusting the width w of the chrome line shown on figure 20 allows control of the line width 210 produced by the generic phase shift mask on a product wafer photoresist as shown in fig.21 , acts to darken the line over that achievable with a phase edge chromeless mask, and registers the line more accurately with respect to features exposed by the personalized generic phase shift mask.
  • the intensity of exposure under the chrome line 200 is preferably less than 5%, more preferably less than 4%, and most preferably less than 2% of the flood exposure level.
  • An even more preferred inventive embodiment of the invention is to produce the generic phase shift mask substrate with sloping sidewalls 220 between the flat areas as shown in fig 22.
  • the angle of the sidewall with respect to the surface of the substrate is preferably near 70° , but may be steeper or shallower as required by the molding, stamping, or etching processes used.
  • the portion of the personalized phase shift mask blank shown in fig. 23 results.
  • the cost per wafer exposed of the phase shift mask is further reduced in an inventive process whereby a generic phase shift mask blank may be personalized and used for a series of exposures, and when the run is finished and the mask is no longer needed, the chrome may be stripped off and the generic substrate recoated with a fresh film of chrome and personalized for use in further exposures with a different pattern.
  • the thickness of the opaque film in relation to the height of the phase shift areas is shown much enhanced for clarity, as are the feature heights of the phase shift masks in relation to the thicknesses of the substrates.
  • the dimensions of the phase shift areas shown in fig. 6 - 9 are large enough to avoid producing dark lines with crossing dark lines which would be left unexposed if corners of the rectangular areas shown in figs. 6-9 were not covered by the opaque film. Patterns with such smaller dimensions may be used in some embodiments of the invention.
  • Fig. 24 shows a preferred embodiment of the invention, wherein the generic substrate 240 of the generic phase shift mask blank is shown as a plate 241 of a first material with another material 242 attached to the surface 244 of the plate 241 .
  • the phase shift pattern 246 is formed in the material 242 by stamping, molding, or etching.
  • Fig. 25 shows a picture of construction of a generic substrate for a generic phase shift mask blank, whereby a flat plate 250 is covered with exposed and developed photoresist 252, and phase shift material 254 is deposited on the flat plate in the phase shift areas 256.
  • Such deposition systems as plasma deposition, CVD deposition, and other deposition systems are known in the art. Dissolving the resist 252 lifts off the material 254 deposited on top of the resist, and leaves material 254 in the phase shift areas 256.
  • Fig. 26 shows a plan view of a generic phase shift mask blank 250 having three areas 262, 264, and 266. Each of the areas 262, 264, and 266 may have a different uniform array of phase shift areas to accommodate different requirements for feature density and feature orientation.
  • the embodiments of generic phase shift mask substrates shown in Fig. 6-9 may be extended to cover stripes of alternating phase shift 272 and 274 of fig. 27 which would produce unexposed lines running in only one direction.
  • Unexposed areas in photoresist suitable for contact holes may be formed by a double exposure using two phase shift masks produced from generic substrates such as fig. 27, and registering them at an angle to one another.
  • Fig 28 shows the pattern of the first exposure from a patterned phase shift mask blank made from the generic substrate of fig. 27, and figure 29 shows the pattern of the second exposure. The resultant exposure pattern is shown in fig. 30.
  • fig. 31-33 Preferred embodiments for generic substrates are shown in fig. 31-33.
  • the phase shift masks available from substrates such as figs. 31-33 would allow unexposed photoresist lines parallel, perpendicular, and at 45° to one another. Other angles are available using patterns such as figs. 7-9, 27, and 31-33 with differing angles.
  • Fig. 34 shows a sketch of the system of the invention. Radiation from a source of radiation 340 is focused on the strong phase shift mask of the invention 342 by an optical system 341.
  • the strong phase shifting mask of the invention is introduced into place and moved relatively to the optical system by means 348.
  • a second mask 343 is shown ready to be introduced into place by means 349.
  • Means 344 focuses radiation transmitted through the strong phase shift mask on to the photoresist 345 covering a wafer 346.
  • Means 347 is shown for translating and adjusting wafer 346 with respect to mask 342.
  • Generic masks are most preferably formed in one or more arrays covering substantially all the area of the mask, and a family of generic masks would have matching arrays, each array having the same pitch between features as others of the same family.
  • Devices produced by such patterned generic mask ordered arrays are characterized by having features where the displacement in one dimension from one device feature to the next is an integral multiple of ⁇ , where ⁇ is determined by the pitch of the generic substrate and the magnification of the exposure tool, and ⁇ is largerthan ⁇ / 3, where ⁇ is the wavelength of light used to expose the photoresist to make the features.
  • a Fourier or wavelet transform of an image of such features is characterized by at least one strong narrow peak indicating the pitch of the features and the dimensions of the features.
  • Such dimensions are typically less than 150 nm.
  • Such devices are well known logic and memory semiconductor devices, as well as micromechanical devices and combinations of micromechanical devices with logic and memory formed on a single substrate using well known semiconductor lithographic technology.
  • Such micromechanical devices include but are not limited to motors, valves, actuators, and measurement instruments and tools.
  • Patents and publications referred to above are hereby incorporated by reference.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne les éléments sombres fins des images projetées par des masques forts à déphasage utilisés pour la lithogravure de microdispositifs. Ces éléments, accompagnés de déphasages optiques de 180°, sont produits par un tracé topographique distinct du tracé des ouvertures définissant les éléments clairs. Un tracé topographique générique peut être réalisé sur le substrat en dessous d'une couche de masque opaque continue (62) qui reçoit ensuite le tracé d'un système d'ouvertures spécifique du dispositif. Dès que l'image projetée par un masque à déphasage réunissant, d'une part le tracé topographique générique, et d'autre part le tracé d'ouvertures spécifique du dispositif, vient se combiner avec une image spécifique du dispositif projetée par un masque photographique conventionnel associé, le tracé de photorésine résultant correspond aux couches de dispositifs souhaitées avec les avantages d'imagerie propres aux masques forts à déphasage, mais sans qu'il y ait besoin d'un tracé spécifique pour le tracé topographique.
PCT/US2000/018331 1999-07-19 2000-07-03 Masque a dephasage generique WO2001006320A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US14467099P 1999-07-19 1999-07-19
US60/144,670 1999-07-19
US09/428,308 US6287732B1 (en) 1999-07-19 1999-10-28 Generic phase shift masks
US09/428,309 US6251549B1 (en) 1999-07-19 1999-10-28 Generic phase shift mask
US09/428,309 1999-10-28
US09/428,308 1999-10-28

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WO2001006320A1 true WO2001006320A1 (fr) 2001-01-25

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065211A1 (fr) 2001-02-15 2002-08-22 Dai Nippon Printing Co., Ltd. Masque a dephasage et son procede de fabrication
DE10119145C1 (de) * 2001-04-19 2002-11-21 Infineon Technologies Ag Verfahren zum Feststellen und Beheben von Phasenkonflikten auf alternierenden Phasenmasken und Maskendesign zur Verwendung bei einem solchen Verfahren
US6818389B2 (en) 2000-09-13 2004-11-16 Massachusetts Institute Of Technology Method of design and fabrication of integrated circuits using regular arrays and gratings

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882827A (en) * 1996-08-26 1999-03-16 Mitsubishi Denki Kabushiki Kaisha Phase shift mask, method of manufacturing phase shift mask and method of forming a pattern using phase shift mask
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882827A (en) * 1996-08-26 1999-03-16 Mitsubishi Denki Kabushiki Kaisha Phase shift mask, method of manufacturing phase shift mask and method of forming a pattern using phase shift mask
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818389B2 (en) 2000-09-13 2004-11-16 Massachusetts Institute Of Technology Method of design and fabrication of integrated circuits using regular arrays and gratings
WO2002065211A1 (fr) 2001-02-15 2002-08-22 Dai Nippon Printing Co., Ltd. Masque a dephasage et son procede de fabrication
EP1361478A1 (fr) * 2001-02-15 2003-11-12 Dai Nippon Printing Co., Ltd. Masque a dephasage et son procede de fabrication
EP1361478A4 (fr) * 2001-02-15 2008-05-21 Dainippon Printing Co Ltd Masque a dephasage et son procede de fabrication
DE10119145C1 (de) * 2001-04-19 2002-11-21 Infineon Technologies Ag Verfahren zum Feststellen und Beheben von Phasenkonflikten auf alternierenden Phasenmasken und Maskendesign zur Verwendung bei einem solchen Verfahren
US6730463B2 (en) 2001-04-19 2004-05-04 Infineon Technologies Ag Method for determining and removing phase conflicts on alternating phase masks

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