WO2001001452A2 - Dispositifs electroluminescents organiques a injection de porteurs amelioree - Google Patents

Dispositifs electroluminescents organiques a injection de porteurs amelioree Download PDF

Info

Publication number
WO2001001452A2
WO2001001452A2 PCT/US2000/017325 US0017325W WO0101452A2 WO 2001001452 A2 WO2001001452 A2 WO 2001001452A2 US 0017325 W US0017325 W US 0017325W WO 0101452 A2 WO0101452 A2 WO 0101452A2
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
layer
emitting device
contact
organic
Prior art date
Application number
PCT/US2000/017325
Other languages
English (en)
Other versions
WO2001001452A3 (fr
Inventor
Thomas N. Jackson
Hagen Klauk
Original Assignee
The Penn State Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Penn State Research Foundation filed Critical The Penn State Research Foundation
Priority to AU78246/00A priority Critical patent/AU7824600A/en
Publication of WO2001001452A2 publication Critical patent/WO2001001452A2/fr
Publication of WO2001001452A3 publication Critical patent/WO2001001452A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Definitions

  • This invention relates to light emitting devices and, in particular, to organic light emitting devices
  • Organic light emitting diodes are of interest for emissive flat panel displays with low, medium or high information content for a wide range of military, industrial, consumer, and automotive applications For virtually all applications, but particularly for portable and other low-power applications, devices with low turn-on voltage and low operating voltages are desirable
  • Organic light emitting diodes are typically fabricated by sandwiching one or more appropriate organic films between two conductive electrodes When an electric field is applied across the device, electrons are injected into the organic film from the negatively charged electrode (the cathode), and holes are injected from the positively charged electrode (the anode) The injected carriers travel through the organic material under the influence of the electric field When a pair of oppositely charged carriers meet, they recombine and emit light The amount of light generated in the electroluminescent material is approximately proportional to the electric current flowing through the device, which can be increased by applying a larger electric field
  • the voltage at which organic electroluminescent diodes turn on and begin to emit light is often determined by the electric field required to inject an appreciable number of charge carriers Since most organic materials considered for electroluminescent diodes have very small intrinsic carrier densities, carrier injection from external contacts is essential, but also is often problematic due to the large electrical resistivity of the organic materials Similarly, the electric current flowing through the device at a particular voltage depends critically on the number of charge carriers injected from the contacts at that particular voltage Thus, the voltage required to drive a particular electric current through the device and obtain a particular brightness can be reduced by providing improved carrier injection at the contacts Lower operating voltages are desirable, since they allow the organic electroluminescent diode or display device to operate with lower power consumption, with a smaller power supply or longer battery lifetime, and with reduced heat dissipation
  • a low-work function metal such as calcium magnesium, or aluminum
  • a conductive transparent metal oxide such as indium tin oxide
  • the hole-injecting (anode) contact At least one of the contacts is usually transparent or semi-transparent so that the light generated in the electroluminescent material can exit the device efficiently
  • Indium tin oxide provides not only large optical transmittance, but also a relatively large work function which is beneficial to obtaining good hole injection from the anode contact
  • a low work function such as provided by calcium magnesium, or aluminum contacts, is beneficial to obtaining efficient electron injection from the cathode
  • organic light emitting devices Many of the problems and limitations of organic light emitting devices are due to the fact that the typically used inorganic contacts usually must inject carriers into organic materials with very small intrinsic carrier densities The problems associated with the inorganic/organic contact interfaces can be reduced by sandwiching a thin layer of a highly conductive organic contact material between the organic light emitter and the inorganic contact This has resulted in a significant improvement in the carrier injection efficiency
  • Organic contact materials that have previously been considered include polyani ne and the phthalocyanines, such as copper phthalocyanines (CuPc) and 3,4,9, 10-perylenetetracarboxyl ⁇ c dianhydnde (PTCDA) Also, ultrathin self-assembled polymer layers have improved carrier injection properties in organic light emitters
  • the improvement in carrier injection is typically credited to an improved energy band lineup at the contact interface
  • a suitable interfacial layer is believed to reduce the height of the energy barrier which the charge carriers have to surmount upon injection from the contact into the organic light emitter, resulting in lower turn-on voltage and larger current densities That is, the organic layer is used to modify the effective work function of the inorganic contact material, either by using an organic conductor as a functional replacement for an inorganic conductor (but with a modified work function) or by using an organic interfacial layer to develop a potential drop which modifies the work function
  • the present invention provides a light emitting device having an organic light emitting layer and an organic semiconductor layer that enhances carrier density or injection These layers are interposed between first and second contact layers
  • a carrier transport layer can be optionally interposed between the light emitting and semiconductor layers When used as a diode, the first and second contacts function as an anode and a cathode
  • the light emitting device is further provided with a gate contact and a gate dielectric
  • a gate contact and a gate dielectric These embodiments function as a field effect device with the first and second contacts also functioning as a source and a drain, depending on whether the semiconductor layer is a p-type or n-type material
  • the devices of the present invention have the important advantages of a much wider range of available material band gaps and work functions
  • the field effect device embodiments have the ability of controlling the carrier density in the organic semiconductor to control injection into the light emitter
  • Figure 1 is a view in cross section of a light emitting device of the present invention
  • Figure 2 is an equivalent electrical circuit for the light emitting device of Figure 1 ,
  • Figure 3 is an alternate embodiment of a light emitting device of the present invention
  • Figure 4 is an alternate embodiment of a light emitting device of the present invention
  • Figure 5 is an alternate embodiment of a light emitting device of the present invention
  • Figure 6 is a graph depicting electrical characteristics of the light emitting devices of the present invention.
  • Figure 7 is a view in cross section of a prior art light emitting diode
  • Figure 8 is view in cross section of a light emitting diode of the present invention
  • Figures 9 and 10 are graphs depicting electrical characteristics of the light emitting diodes of Figures 7 and 8,
  • Figure 11 is a graph depicting the drain current-drain voltage characteristic for the light emitting device of Figure 1 and
  • Figure 12 is a graph depicting the current density and bias voltage for the light emitting device of Figure 1
  • an organic light emitting device 10 includes a glass substrate 12, upon which is disposed a gate electrode 14, a gate dielectric 16, and an electrically conductive contact 18
  • An organic active thin film (TFT) layer 20 overlies gate dielectric 16 and contact 18
  • An organic light emitting layer 22 overlies TFT layer 20
  • Another electrically conductive contact 24 overlies organic LED layer 22
  • Gate electrode 14 is transparent to light emitted by organic LED layer 22
  • TFT layer 20 is a p-channel type Contact 18 functions as a source and as an anode to inject positive charge carriers into TFT layer 20 and contact 24 functions as a drain and a cathode to inject electrons into LED layer 22
  • TFT layer 20 were an n-channel type, the functions of contacts 18 and 24 would be interchanged That is, contact 18 would then inject electrons into TFT layer 20 and its function would be a drain and a cathode Contact 24 would insert holes into LED layer 22 and its function would be a source and an anode
  • gate electrode 14 controls the electric field provided between contacts 18 and 24, thereby controlling the injection of carriers into organic LED stack 22
  • light emitting device 10 is shown in an equivalent electrical circuit as a field effect transistor 26 and a light emitting diode (LED) 28 LED 28 is essentially a part of the source drain channel of FET 26
  • LED 28 is essentially a part of the source drain channel of FET 26
  • a light emitting device 30 differs from light emitting device 10 in two aspects
  • a carrier transport layer 32 of organic material that is preferably tetraphenyldiamine (TPD)
  • TFT layer 20 enhances carrier (or hole for the source notation of Figure 3) injection
  • preferred materials for gate electrode 14, gate dielectric 16, source contact 18 TFT layer 20, light emitting layer 22 and cathode contact 24 are identified as indium tin oxide, (ITO) silicon dioxide, palladium (PD) pentacene, 8-hydroxyqu ⁇ nol ⁇ ne aluminum (Alq) and aluminum, respectively
  • Light emitting device 36 includes a substrate 38 that serves as a combination substrate and gate electrode
  • a gate dielectric layer 40 is disposed on substrate 38
  • a TFT layer 42 is disposed on gate dielectric layer 40 and a source contact 44 is disposed on TFT layer 42
  • a carrier transport layer 46 is disposed on TFT layer 42 and source contact 44
  • Light emitting layer 22 is disposed on carrier transport layer 46 and cathode contact 24 is disposed on light emitting layer 22
  • Substrate 38 is a semiconductor, such as single crystal silicon that serves as a combination substrate and gate electrode Preferred materials for gate dielectric 40, source contact 44, TFT layer 42, carrier transport layer 46, light emitting layer 22 and cathode contact 24 are identified as ITO, silicon dioxide, PD, pentacene, TPD, Alq and aluminum, respectively
  • FIG. 5 another alternate embodiment depicts a light emitting device 50
  • Light emitting device 50 differs from light emitting device 10 of Figure 1 by the insertion of an organic carrier injection layer 52 between light emitting layer 22 and cathode contact 24 This improves the carrier injection at the interface of inorganic contact 24 and light emitting layer 22
  • Substrate 12 may be any suitable glass substrate, such as CorningTM Model 7059 Transparent gate electrode14 is formed of either indium tin oxide (ITO) or ion-beam sputtered ultra-thin metal films
  • ITO indium tin oxide
  • ion-beam sputtered ultra-thin metal films Metal films deposited by ion-beam sputtering have exceptionally small surface roughness (near 1A rms, near 10 A peak-to-valley roughness), and films as thin as about 20 A are continuous and conductive and provide optical transmittance as large as 80% Ultra-thin metal films are deposited at room temperature and require no post-deposition anneal, thereby significantly simplifying the fabrication process
  • Gate dielectric layer 16 can be prepared, for example, either by plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride at a substrate temperature of 250°C or by reactive ion-beam sputtering of silicon dioxide at a substrate temperature of 80°C
  • Source contact 18 is preferably formed of Palladium, since it provides a large work function, is not significantly oxidized, and, when prepared by ion-beam sputtering, has exceptionally small surface roughness which leads to improved carrier injection into TFT layer 20
  • the three organic materials, pentacene, TPD, and Alq are small-molecule organic compounds It will be apparent to those skilled in the art that other small-molecule organic compounds or polymers may be used
  • the three organic materials, pentacene, TPD, and Alq can be deposited by thermal evaporation in vacuum During the pentacene deposition, the substrate is held at about 60 °C to improve the carrier mobility in TFT channel layer 20
  • the TPD and Alq layers 32 and 22 are deposited with substrate 12 held at about room temperature to reduce undesired film crystallization Film thickness is typically about 500 A for pentacene layer 20, about 300 A for TPD layer 32, and about 350 A for Alq layer 22
  • the aluminum cathodes are deposited through a mechanically aligned shadow mask
  • gate electrode 12, source contact layer 18 and cathode layer 24 may be any suitable organic or inorganic material that is electrically conductive
  • gate electrode 12 may be any suitable electrically conductive material, such as ITO, or any suitable metal (transparent for bottom emitting devices)
  • source contact layer 18 may be any suitable organic or inorganic material that is electrically conductive and forms a useful contact with the organic semiconductor layer 20, such as PD
  • cathode contact layer 24 may be any suitable organic or inorganic material that is electrically conductive and forms a useful contact with the organic light emitting layer 22, such as aluminum
  • semiconductor layer 20 may be any suitable organic semiconductor material, such as polymers or small molecule materials, such as, pentacene
  • that light emitting layer 22 may be any suitable electroluminescent organic polymer or small molecule material such as Alq, or PPV
  • carrier transport layer 32 may be any suitable organic polymer or small molecule material, such as TPD, or NPB, and
  • gate electrodes, gate dielectric layer, and source contacts can be patterned by photolithography and lift-off
  • cathode contacts can be deposited through a shadow mask that is aligned with respect to the source contacts using an optical microscope
  • unpatterned pixels only the source contacts and the cathode contacts are patterned All other layers are unpatterned
  • top-emitting pixels can also be fabricated, using a low-resistivity silicon wafer as the substrate and gate electrode thermally grown silicon dioxide as the gate dielectric layer and semitransparent cathode contacts prepared from 100 A thick aluminum films
  • a graph 60 shows the electrical characteristics of light emitting device 10 with a pentacene TFT layer 20 and a silicon nitride gate dielectric 16 This device has near-zero threshold voltage and carrier field-effect mobility near 0 6 cm 2 /V-s Light emitting devices with an ion-beam sputtered silicon dioxide gate dielectric 16 have very similar electrical characteristics
  • a graph 62 shows the current-voltage characteristics of a non-integrated light emitting device fabricated on the same substrate as the integrated devices, but with a pentacene layer between the source or anode contact and the TPD layer Because pentacene provides a large carrier concentration and improved hole injection, the light emitting device has a low turn-on voltage of about 4 V and provides high brightness at relatively low bias
  • a graph 64 shows the electrical characteristics of an unpatterned integrated pixel with silicon nitride as gate dielectric 16
  • the device operates in a common-source configuration, and the current density is controlled by adjusting the gate-source bias, thereby allowing the pixel brightness to be modulated over four orders of magnitude
  • the effect of adjusting the gate-source bias is to modulate the carrier sheet density in the TFT channel layer 20 and, thus, the injection of holes into the light emitting layer 22, while the voltage across source 18 and cathode 24 provides an electric field across the diode and electron injection into emissive layer 22
  • Light emission occurs when the cathode current exceeds about 1 mA/cm 2
  • Integrated pixels fabricated with an ion-beam deposited silicon dioxide gate dielectric 16 have very similar electrical characteristics In general, the electrical characteristics of patterned and unpatterned integrated pixels are very similar
  • organic semiconductor devices 10, 30, 36 and 50 include an organic semiconductor field effect transistor integrated with an organic light emitter
  • the field effect transistor controls the carrier density for a single contact 18 of the organic light emitter for organic light emitting devices 10, 30 and 36 and for both contacts 18 and 24 of organic light emitting device 50
  • three-electrode light emitting devices employ a small-molecule organic semiconductor, such as pentacene, as a carrier-injection material
  • a small-molecule organic semiconductor such as pentacene
  • Alternative embodiments of the present invention employ a layer of small-molecule organic semiconductor material, such as pentacene, in a two-electrode light emitting device or light emitting diode (LED) LEDs using a pentacene contact layer provide dramatic improvements in turn-on voltage and brightness compared with similar devices prepared without a pentacene contact layer
  • a prior art LED 70 includes a substrate 72 that, for example is glass Disposed on substrate 72 is an anode layer 74 formed of ITO Disposed on anode layer 74 is a hole transport layer 76 formed of TPD Disposed on hole transport layer 76 is a light emitting layer 78 formed of the electroluminescent material Alq Alq also has a good electron transport capability Disposed on light emitting layer 78 is a cathode layer 80 formed of an inorganic electrically conductive material, such as aluminum
  • an alternate embodiment of the present invention is an LED 90 that has a substrate 92 that, for example, is glass Disposed on substrate 92 is an anode layer 94 formed of palladium Disposed on anode layer 94 is a hole injection layer 95 formed of pentacene, Disposed on hole injection layer 95 is a hole transport layer 96 formed of TPD Disposed on hole transport layer 96 is a light emitting layer 98 formed of the electroluminescent material Alq Disposed on light emitting layer 98 is a cathode layer 100 formed of an inorganic electrically conductive material, such as aluminum
  • the current density-voltage characteristics are depicted for LEDs 70 and 90
  • light emission occurs when current density exceeds about 10 "4 A/cm 2
  • the turn-on voltage applied across the anode and cathode layers
  • the turn-on voltage was reduced from about 5 volts for LED 70 without a pentacene contact layer to about 3 volts for LED 90 fabricated with a pentacene contact layer
  • the pentacene contact layer provides an improvement in current density of two orders of magnitude
  • the improvement in current density is more than three orders of magnitude

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un dispositif électroluminescent organique à injection de porteurs améliorée. Ce dispositif comprend une couche d'un matériau électroluminescent organique et une couche d'un matériau semiconducteur organique interposées entre une première et une seconde couche de contact. Une couche de transport de porteurs peut éventuellement être incluse entre les couches semiconductrice et électroluminescente. Lorsqu'on utilise ledit dispositif comme une diode, le premier et le second contact servent fonctionnellement d'anode et de cathode. Le dispositif peut également être réalisé sous la forme d'un transistor à effet de champ par addition d'un contact de grille et d'un diélectrique de grille. Le premier et le second contact ont alors la fonction supplémentaire de source ou de drain, selon si le matériau semiconducteur organique est du type p ou du type n. De préférence, le semiconducteur organique est formé à partir de pentacène.
PCT/US2000/017325 1999-06-25 2000-06-23 Dispositifs electroluminescents organiques a injection de porteurs amelioree WO2001001452A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU78246/00A AU7824600A (en) 1999-06-25 2000-06-23 Organic light emitters with improved carrier injection

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14116199P 1999-06-25 1999-06-25
US60/141,161 1999-06-25

Publications (2)

Publication Number Publication Date
WO2001001452A2 true WO2001001452A2 (fr) 2001-01-04
WO2001001452A3 WO2001001452A3 (fr) 2008-02-21

Family

ID=22494457

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/017325 WO2001001452A2 (fr) 1999-06-25 2000-06-23 Dispositifs electroluminescents organiques a injection de porteurs amelioree

Country Status (2)

Country Link
AU (1) AU7824600A (fr)
WO (1) WO2001001452A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1385220A2 (fr) * 2002-07-17 2004-01-28 Pioneer Corporation Dispositif semiconducteur organique
EP1402758A1 (fr) * 2001-06-08 2004-03-31 Byoung Choo Park Del organique a trois bornes
DE10247817A1 (de) * 2002-10-14 2004-04-22 Infineon Technologies Ag Polymertransistor-Anordnung, integrierte Schaltkreis-Anordnung und Verfahren zum Herstellen einer Polymertransistor-Anordnung
WO2004086526A2 (fr) * 2003-03-28 2004-10-07 Technische Universität Darmstadt Dispositifs generant de l'electroluminescence organique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142343A (en) * 1989-08-18 1992-08-25 Idemitsu Kosan Co., Ltd. Organic electroluminescence device with oligomers
US5677572A (en) * 1996-07-29 1997-10-14 Eastman Kodak Company Bilayer electrode on a n-type semiconductor
US5681756A (en) * 1994-05-31 1997-10-28 Motorola Method of fabricating an integrated multicolor organic led array
US5970318A (en) * 1997-05-15 1999-10-19 Electronics And Telecommunications Research Institute Fabrication method of an organic electroluminescent devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142343A (en) * 1989-08-18 1992-08-25 Idemitsu Kosan Co., Ltd. Organic electroluminescence device with oligomers
US5681756A (en) * 1994-05-31 1997-10-28 Motorola Method of fabricating an integrated multicolor organic led array
US5677572A (en) * 1996-07-29 1997-10-14 Eastman Kodak Company Bilayer electrode on a n-type semiconductor
US5970318A (en) * 1997-05-15 1999-10-19 Electronics And Telecommunications Research Institute Fabrication method of an organic electroluminescent devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1402758A1 (fr) * 2001-06-08 2004-03-31 Byoung Choo Park Del organique a trois bornes
EP1402758A4 (fr) * 2001-06-08 2007-10-31 Byoung Choo Park Del organique a trois bornes
EP1385220A2 (fr) * 2002-07-17 2004-01-28 Pioneer Corporation Dispositif semiconducteur organique
EP1385220A3 (fr) * 2002-07-17 2006-05-31 Pioneer Corporation Dispositif semiconducteur organique
DE10247817A1 (de) * 2002-10-14 2004-04-22 Infineon Technologies Ag Polymertransistor-Anordnung, integrierte Schaltkreis-Anordnung und Verfahren zum Herstellen einer Polymertransistor-Anordnung
US7622789B2 (en) 2002-10-14 2009-11-24 Infineon Technologies Ag Polymer transistor arrangement, integrated circuit arrangement and method for producing a polymer transistor arrangement
WO2004086526A2 (fr) * 2003-03-28 2004-10-07 Technische Universität Darmstadt Dispositifs generant de l'electroluminescence organique
WO2004086526A3 (fr) * 2003-03-28 2004-11-04 Michele Muccini Dispositifs generant de l'electroluminescence organique
US8497501B2 (en) 2003-03-28 2013-07-30 Michele Muccini Organic electroluminescence generating devices

Also Published As

Publication number Publication date
AU7824600A (en) 2001-01-31
WO2001001452A3 (fr) 2008-02-21

Similar Documents

Publication Publication Date Title
US6720572B1 (en) Organic light emitters with improved carrier injection
US7358538B2 (en) Organic light-emitting devices with multiple hole injection layers containing fullerene
US6023073A (en) Organic/inorganic alloys used to improve organic electroluminescent devices
KR101497744B1 (ko) 나노튜브 가능한, 게이트 전압이 제어된 발광 다이오드
US8120242B2 (en) Transistor and process of producing the same, light-emitting device, and display
US9472774B2 (en) Organic electroluminescence generating devices
US20060228543A1 (en) Metal/fullerene anode structure and application of same
US20060099448A1 (en) Top light-emitting devices with fullerene layer
US6524884B1 (en) Method for fabricating an organic electroluminescene device having organic field effect transistor and organic eloectroluminescence diode
WO2005006817A1 (fr) Element electroluminescent et dispositif electroluminescent
EP1065737A2 (fr) Dispositif organique électroluminescent
US7897270B2 (en) Organic light emitting diode display and manufacturing method thereof
US20040265623A1 (en) Conducting polymer for electronic devices
US6636001B2 (en) Organic electronic device and nonlinear device
WO2001001452A2 (fr) Dispositifs electroluminescents organiques a injection de porteurs amelioree
US20060261329A1 (en) Organic electroluminescence devices
WO2000017911A1 (fr) Diode electroluminescente organique a matrice active pourvue d'une couche organique dopee a epaisseur augmentee
KR101338098B1 (ko) 유기전계발광 표시소자 및 그 제조방법
KR101304903B1 (ko) 유기 발광 표시 장치
KR100863910B1 (ko) 유기 발광 소자
Chwang et al. Flexible phosphorescent OLEDs on metal foil for military and commercial applications
He et al. P‐139: Development of OLEDs with a Highly Efficient Electron Transport Layer and Ohmic Cathode Using Nanostructured Carbon Fullerene
WO2010004494A1 (fr) Dispositif luminescent

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
NENP Non-entry into the national phase

Ref country code: DE

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP