WO2000077832A3 - Metal oxide thin films for high dielectric constant applications - Google Patents

Metal oxide thin films for high dielectric constant applications Download PDF

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Publication number
WO2000077832A3
WO2000077832A3 PCT/US2000/015956 US0015956W WO0077832A3 WO 2000077832 A3 WO2000077832 A3 WO 2000077832A3 US 0015956 W US0015956 W US 0015956W WO 0077832 A3 WO0077832 A3 WO 0077832A3
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WO
WIPO (PCT)
Prior art keywords
dielectric constant
group
thin films
high dielectric
metal oxide
Prior art date
Application number
PCT/US2000/015956
Other languages
French (fr)
Other versions
WO2000077832A2 (en
Inventor
Shinichiro Hayashi
Vikram Joshi
Narayan Solayappan
Joseph D Cuchiaro
De Araujo Carlos A Paz
Original Assignee
Symetrix Corp
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/329,670 external-priority patent/US6339238B1/en
Priority claimed from US09/365,628 external-priority patent/US6495878B1/en
Application filed by Symetrix Corp, Matsushita Electronics Corp filed Critical Symetrix Corp
Priority to JP2001503214A priority Critical patent/JP3996767B2/en
Priority to EP00939756A priority patent/EP1192648A2/en
Priority to KR1020017015922A priority patent/KR20020015048A/en
Publication of WO2000077832A2 publication Critical patent/WO2000077832A2/en
Publication of WO2000077832A3 publication Critical patent/WO2000077832A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Inorganic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulae AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1-x)(TayNb1-y)2O6,where 0≤x≤1.0 and 0≤y≤1.0; (BaxSr1-x)2(TayNb1-y)2O7, where 0≤x≤1.0 and 0≤y≤1.0; and(BaxSr1-x)2Bi2(TayNb1-y)2O10, where 0≤x≤1.0 and 0≤y≤1.0. Thin films according to the invention have a relative dielectric constant ≥40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000ppm, preferably <100.
PCT/US2000/015956 1999-06-10 2000-06-09 Metal oxide thin films for high dielectric constant applications WO2000077832A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001503214A JP3996767B2 (en) 1999-06-10 2000-06-09 Integrated circuit and method of forming integrated circuit
EP00939756A EP1192648A2 (en) 1999-06-10 2000-06-09 Metal oxide thin films for high dielectric constant applications
KR1020017015922A KR20020015048A (en) 1999-06-10 2000-06-09 Metal oxide thin films for high dielectric constant applications

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/329,670 1999-06-10
US09/329,670 US6339238B1 (en) 1998-10-13 1999-06-10 Ferroelectric field effect transistor, memory utilizing same, and method of operating same
US09/365,628 1999-08-02
US09/365,628 US6495878B1 (en) 1999-08-02 1999-08-02 Interlayer oxide containing thin films for high dielectric constant application

Publications (2)

Publication Number Publication Date
WO2000077832A2 WO2000077832A2 (en) 2000-12-21
WO2000077832A3 true WO2000077832A3 (en) 2001-09-07

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Country Status (5)

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EP (1) EP1192648A2 (en)
JP (1) JP3996767B2 (en)
KR (1) KR20020015048A (en)
CN (1) CN1358326A (en)
WO (1) WO2000077832A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110668818A (en) * 2019-10-31 2020-01-10 西安交通大学 Ultralow temperature sintered composite microwave dielectric ceramic material and preparation method thereof

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US6673664B2 (en) * 2001-10-16 2004-01-06 Sharp Laboratories Of America, Inc. Method of making a self-aligned ferroelectric memory transistor
JP4840794B2 (en) * 2002-08-30 2011-12-21 国立大学法人東京工業大学 Manufacturing method of electronic device
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US6911361B2 (en) * 2003-03-10 2005-06-28 Sharp Laboratories Of America, Inc. Low temperature processing of PCMO thin film on Ir substrate for RRAM application
US6774054B1 (en) * 2003-08-13 2004-08-10 Sharp Laboratories Of America, Inc. High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application
DE102005018029A1 (en) 2005-04-14 2006-10-26 Infineon Technologies Ag Method for producing an electrical component
US8361811B2 (en) 2006-06-28 2013-01-29 Research In Motion Rf, Inc. Electronic component with reactive barrier and hermetic passivation layer
JP5248025B2 (en) * 2007-03-01 2013-07-31 東京エレクトロン株式会社 Method for forming SrTiO3 film and computer-readable storage medium
KR100915920B1 (en) 2008-01-24 2009-09-07 한국세라믹기술원 Ceramic material of pyrochlore crystal structure with low thermal conductivity and manufacturing method of the same
KR101333346B1 (en) * 2009-04-27 2013-11-28 고쿠리츠다이가쿠호징 야마나시다이가쿠 Tungsten bronze-type piezoelectric material and production method therefor
JP2012151453A (en) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method of the same
JP6218116B2 (en) * 2013-03-26 2017-10-25 Toto株式会社 Composite metal oxide particles and method for producing the same
US9755293B2 (en) * 2013-12-05 2017-09-05 Skyworks Solutions, Inc. Enhanced Q high dielectric constant material for microwave applications
CN105448987B (en) * 2014-08-21 2018-07-03 中芯国际集成电路制造(上海)有限公司 Semiconductor devices and preparation method thereof
KR101868305B1 (en) * 2014-12-09 2018-06-15 시메트릭스 메모리, 엘엘씨 Transition metal oxide resistive switching device with doped buffer region
JP6581446B2 (en) * 2015-09-09 2019-09-25 東芝メモリ株式会社 Insulating film and memory device
US9876018B2 (en) 2015-12-03 2018-01-23 Micron Technology, Inc. Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material
US10084057B2 (en) * 2016-08-16 2018-09-25 Globalfoundries Inc. NVM device in SOI technology and method of fabricating an according device
CN106478090B (en) * 2016-09-30 2019-11-08 西安交通大学 Bismuth titanates-calcium niobate solid solution frequency dielectric ceramic preparation method
KR102650214B1 (en) * 2018-09-19 2024-03-21 삼성전자주식회사 Integrated circuit device and method of manufacturing the same
WO2020246363A1 (en) * 2019-06-05 2020-12-10 国立研究開発法人物質・材料研究機構 Dielectric film, capacitor using same, and dielectric film production method
JP2022111642A (en) * 2021-01-20 2022-08-01 Tdk株式会社 Dielectric composition and electronic component
CN114956814B (en) * 2022-05-16 2023-08-18 昆明理工大学 Sintering-resistant high-CMAS corrosion-resistant high-entropy tantalum/niobium ceramic and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110668818A (en) * 2019-10-31 2020-01-10 西安交通大学 Ultralow temperature sintered composite microwave dielectric ceramic material and preparation method thereof
CN110668818B (en) * 2019-10-31 2021-01-19 西安交通大学 Ultralow temperature sintered composite microwave dielectric ceramic material and preparation method thereof

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KR20020015048A (en) 2002-02-27
WO2000077832A2 (en) 2000-12-21
JP2003502837A (en) 2003-01-21
JP3996767B2 (en) 2007-10-24
EP1192648A2 (en) 2002-04-03
CN1358326A (en) 2002-07-10

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