WO2000052841A1

WO2000052841A1 - Radio frequency circuit for radio transmission/reception, and radio frequency circuit module for radio transmission/reception

Info

Publication number: WO2000052841A1
Application number: PCT/JP1999/000980
Authority: WO
Inventors: Toru Maniwa; Yasunobu Watanabe; Takayoshi Ode; Tsuyoshi Hasegawa
Original assignee: Fujitsu Limited
Priority date: 1999-03-01
Filing date: 1999-03-01
Publication date: 2000-09-08

Abstract

A radio frequency circuit module for radio transmission and reception comprises a semiconductor element (27), a first surface acoustic wave duplexer (11a), a second surface acoustic wave duplexer (11b) and a circulator (29), which are integrally mounted on a ceramic circuit substrate (10) and hermetically sealed into a module. The circulator is attached to a magnetic shield to sufficiently attenuate signals in the transmission band and ensure sufficient suppression outside the band.

Description

Description 1 High-frequency circuit for wireless transmission / reception and high-frequency circuit module for wireless transmission / reception

The present invention relates to a radio transmission / reception high-frequency circuit and a radio transmission / reception high-frequency circuit module suitable for a mobile communication system adopting a radio system using a W-CDMA system. Background art

In recent years, research and development on the W-CDM (Wideband-Code Division Multiple Access) method as a mobile communication method has been actively pursued, and a number of high-frequency circuit products for wireless transmitters and receivers have been released. This high-frequency circuit consisted of an antenna, a transmitter, a receiver, etc., and their modules were configured separately.

FIG. 27 is a block diagram of a conventional radio transmitting / receiving high-frequency circuit. The high-frequency circuit 90 shown in FIG. 27 includes a transmitting / receiving antenna 90a and an antenna duplexer connected to the transmitting / receiving antenna 90a. 90 b, a low-noise amplifier 90 c for amplifying the reception signal output from the antenna duplexer 90 b with low noise, a high-output amplifier 90 a for amplifying the transmission signal, and this high-output amplifier The output of 90 e is input to an antenna duplexer 90 b, and an isolator 90 d for separating signals for both transmission and reception is configured.

As the antenna duplexer 9 Ob, there are a dielectric type duplexer and a surface acoustic wave type duplexer. Of these, no dielectric duplexer has ever been integrated with a substrate because the components are large and the electric field shielding of surrounding components is insufficient.

Therefore, it is conceivable to integrate the surface acoustic wave type duplexer with the substrate.As described above, the transmitting and receiving antenna 90a, the isolator 90d, and the high-power amplifier 90e are connected in this order. Since there is one antenna duplexer 90b, the W-CDMA system could not secure a sufficient amount of out-of-band suppression. FIG. 28 is a diagram illustrating reception characteristics when the antenna duplexer 90b is configured using a surface acoustic wave type duplexer in the W—C DMA scheme. In the graph shown in Fig. 28, the horizontal axis represents frequencies from 1.5 GHz to 2.5 GHz (15.00.0 MHz to 250.0.0 MHz), and the vertical axis represents Fig. 9 shows the reception characteristics at the point where the signal passes through the surface acoustic wave type duplexer. The transmission bandwidth of the W—C DMA system is 1.92 (point A) to 1.98 GHz (point B), and the reception bandwidth is 2.1 1 GHz (point C) to 2.1. 7 GHz (point D), where the transmission band (A, B) and the reception band (C, D) have an interval of 190ΜΉz. Here, one section of the horizontal axis is 100 MHz. By the way, as shown in FIG. 28, the characteristics of the surface acoustic wave type duplexer are such that although a large amount of attenuation can be obtained in the immediate vicinity of both sides of the reception band (C, D), the reception band (C , D), it is not possible to obtain large attenuation in the band away from. That is, since the transmission band and the reception band are separated, when filtering is performed using an elastic surface wave type duplexer, the signal in the transmission band is not sufficiently attenuated. Therefore, the surface acoustic wave type duplexer was not used in the W-CDMA method because the transmission frequency band and the reception frequency band were not close to each other.

Further, FIG. 29 is a diagram illustrating a characteristic of a power leakage amount of the transmission power of the surface acoustic wave type duplexer on the reception side. The vertical axis of the graph shown in Fig. 29 shows the characteristic of the amount of power leakage from the transmitting side to the receiving side. As shown in Fig. 29, the transmitted signal is attenuated by only 30 dB. I couldn't get enough, and my transmitted power was leaking to the receiver.

The present invention has been made in view of such a problem, and is used in a wireless system in which a transmission band and a reception band are separated such as a W-CDMA system. Provided is a radio transmission / reception high-frequency circuit module and a radio transmission / reception high-frequency circuit module that sufficiently attenuate signals in a transmission band and sufficiently secure an out-of-band suppression amount. The purpose is to: Disclosure of the invention Therefore, the radio transmission / reception high-frequency circuit of the present invention includes a semiconductor element for power-amplifying a transmission radio signal, and a semiconductor element connected to an output side of the semiconductor element for filtering a transmission radio signal from the semiconductor element. A first surface acoustic wave type duplexer for outputting, a second surface acoustic wave type duplexer for filtering and outputting a received radio signal, an antenna for transmitting and receiving a radio signal, and an antenna terminal connected to the antenna And a circulator having a transmitting wireless signal input terminal connected to the first surface acoustic wave type duplexer and a receiving wireless signal output terminal connected to the second surface acoustic wave type duplexer. In addition, the semiconductor element, the first surface acoustic wave type duplexer, and the second surface acoustic wave type duplexer are integrally mounted on a common ceramic substrate. At least the first surface acoustic wave duplexer and the second surface acoustic wave duplexer mounted on a board are hermetically sealed and modularized.

Therefore, in this way, even if a surface acoustic wave type duplexer is used, signals in the transmission band can be sufficiently attenuated, and the amount of suppression outside the band can be sufficiently ensured. In addition, since it is mounted on a single ceramic substrate and the space around the sunshine can be used effectively, miniaturization is promoted. Further, the magnetic shield can be sufficiently provided in a place far from the edge of the ceramic substrate.

Also, the radio transmission / reception high-frequency circuit according to the present invention includes a semiconductor element for power-amplifying a transmission radio signal, and a semiconductor element connected to an output side of the semiconductor element for filtering and outputting the transmission radio signal from the semiconductor element. A first surface acoustic wave type duplexer for filtering, a second surface acoustic wave type duplexer for filtering and outputting a received wireless signal, an antenna for transmitting and receiving a wireless signal, and an antenna terminal connected to the antenna. The first surface acoustic wave type duplexer includes a transmitting wireless signal input terminal connected to the first surface acoustic wave type duplexer and a receiving wireless signal output terminal connected to the second surface acoustic wave type duplexer. It is characterized by that.

Therefore, in this way, a surface acoustic wave type duplexer can be used, and as a result of connecting in the order of an antenna, a modulator, a surface acoustic wave type duplexer, and an amplifier chip, Duplexer on the path from the Since two are installed, the signal in the transmission band can be sufficiently attenuated, and the amount of suppression outside the band can be sufficiently secured. In addition, a surface acoustic wave duplexer can be used in a W-CDMA wireless transmitter / receiver. In addition, the wiring for connecting the antenna and the high-frequency circuit components is fixed, so that the circuit size can be reduced, and there is an advantage that adjustment around the antenna is unnecessary.

Further, the radio transmission / reception high-frequency circuit module of the present invention is a radio transmission / reception high-frequency circuit, comprising: a semiconductor element for power amplifying a transmission radio signal; and a semiconductor element for filtering and outputting the transmission radio signal from the semiconductor element. A ceramic substrate in which the surface acoustic wave type duplexer of No. 1 and a second surface acoustic wave type duplexer that filters and outputs the received radio signal are mounted on a body, and mounted on the ceramic substrate In order to hermetically seal at least the first surface acoustic wave type duplexer and the second surface acoustic wave type duplexer, a lid member attached to the ceramic substrate is provided. It is characterized by

Therefore, in this way, even if a surface acoustic wave type duplexer is used, signals in the transmission band can be sufficiently attenuated, and the amount of suppression outside the band can be sufficiently ensured. In addition, since it is mounted on one ceramic substrate, miniaturization is promoted.

In addition, the high-frequency circuit module for wireless transmission and reception according to the present invention includes a semiconductor element for power-amplifying a transmission wireless signal and a transmission wireless signal from the semiconductor element for filtering and outputting the high-frequency circuit for wireless transmission and reception. And a second surface acoustic wave type duplexer for filtering and outputting a received radio signal. The semiconductor device, the first surface acoustic wave type duplexer, and the second surface acoustic wave type duplexer It is characterized in that the surface acoustic wave type duplexer is integrally mounted on a common substrate.

Therefore, this makes it possible to reduce the size, and since two duplexers are interposed in the path from the transmitting side to the receiving side, the amount of suppression outside the band can be sufficiently ensured.

In addition, the radio transmission / reception high-frequency circuit module according to the present invention includes a semiconductor element that constitutes a radio transmission / reception high-frequency circuit, amplifies a transmission radio signal by power, and filters and outputs a transmission radio signal from the semiconductor element. Surface acoustic wave type duplexer and no receiving A semiconductor having at least two elements of a second surface acoustic wave type duplexer that filters and outputs a line signal, a surface electrode for the element, and a conductor piece bonded to the surface electrode A semiconductor chip comprising a chip, a circuit pattern formed thereon, and a conductor piece of a semiconductor chip joined to the circuit pattern to form a semiconductor chip comprising a substrate connected to the circuit pattern. I have.

Therefore, in this way, the mounting area can be further reduced, and the miniaturization is promoted. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a diagram showing a basic circuit configuration of the present invention.

FIG. 2 is a diagram showing a first modularization pattern of modularization in the circuit configuration of the present invention.

FIG. 3 is a diagram showing a second modularization pattern of modularization in the circuit configuration of the present invention.

FIG. 4 is a diagram showing a third modularization pattern of modularization in the circuit configuration of the present invention.

FIG. 5 is a diagram showing a fourth modularization pattern of modularization in the circuit configuration of the present invention.

FIG. 6 is a block diagram of the radio transmission / reception high-frequency circuit according to the first embodiment of the present invention.

FIG. 7 is a perspective view of the high-frequency circuit module for wireless transmission and reception according to the first embodiment of the present invention.

FIG. 8 is an enlarged view around the surface acoustic wave type duplexer.

FIG. 9 is a diagram showing an example of a cross section of a multilayer substrate using wire bonding. FIG. 10 is a cross-sectional view of the transmission system of the high-frequency circuit module for wireless transmission and reception according to the first embodiment of the present invention.

FIG. 11 is a cross-sectional view of the first substrate.

FIG. 12 (a) is an exploded perspective view showing, in an enlarged manner, a sagittal unit according to the first embodiment of the present invention, and FIG. One day It is an exploded perspective view which expands and shows a part. ^_ Figure 1 3 is a sectional view of a mono calculator unit according to the first embodiment of the present invention. Fig. 14 (a) is a diagram showing an example of a semiconductor chip using flip-chip mounting, and Fig. 14 (b) is a diagram showing an example of bonding between a semiconductor chip and a substrate using flip-chip mounting. is there.

FIG. 15 is a diagram showing the density of electric spectrum leaking from the transmission system to the reception system according to the first embodiment of the present invention.

FIG. 16 is a diagram showing the density of the electric spectrum leaking from the antenna to the receiving system according to the first embodiment of the present invention.

FIG. 17 is an enlarged view of the periphery of a surface acoustic wave duplexer according to a modification of the first embodiment of the present invention.

FIG. 18 is an exploded perspective view showing an enlarged circulator section according to a modification of the first embodiment of the present invention.

FIG. 19 is a sectional view of a circulator section according to a modification of the first embodiment of the present invention.

FIG. 20 is a perspective view of a high-frequency circuit module for wireless transmission and reception according to a second embodiment of the present invention.

FIG. 21 is a cross-sectional view of the transmission system of the radio transmission / reception high-frequency circuit module according to the second embodiment of the present invention.

FIG. 22 is a perspective view of a high-frequency circuit module for wireless transmission and reception according to a third embodiment of the present invention.

FIG. 23 is a cross-sectional view of the transmission system of the high-frequency circuit module for wireless transmission and reception according to the third embodiment of the present invention.

FIG. 24 is a perspective view showing the radio transmission / reception high-frequency circuit module according to the fourth embodiment of the present invention with the lid removed.

FIG. 25 is a perspective view showing a radio transmission / reception high-frequency circuit module according to a modification of the fourth embodiment of the present invention with a lid removed.

FIG. 26 is a sectional view of a transmission system of a radio transmission / reception high-frequency circuit module according to a modification of the fourth embodiment of the present invention. Fig. 27 is a block diagram of a conventional high frequency circuit for wireless transmission and reception. -Figure 28 shows the reception characteristics when an antenna duplexer is configured using a surface acoustic wave type duplexer in the W-CDMA system.

Figure 29 is a diagram showing the characteristics of the power leakage amount on the receiving side of the transmission power of the surface acoustic wave type duplexer in the W—C D MA system. BEST MODE FOR CARRYING OUT THE INVENTION

(A) Explanation of the principle of the present invention

FIG. 1 is a diagram showing a basic circuit configuration of the present invention and explaining circuit portions to be modularized. The radio transmission / reception high-frequency circuit 1 shown in FIG. 1 includes a semiconductor element 1 e for power amplifying a transmission radio signal, and a transmission radio signal from the semiconductor element 1 e connected to the output side of the semiconductor element 1 e. A first surface acoustic wave type duplexer 1 d for filtering and outputting a received signal, a second surface acoustic wave type duplexer 1 for filtering and outputting a received radio signal, and an antenna la for transmitting and receiving a radio signal, An antenna terminal connected to this antenna la and a transmission radio signal input terminal connected to the first surface acoustic wave type duplexer 1 d and a reception radio signal input terminal connected to the second surface acoustic wave type duplexer 1 c A circulator 1b having an output terminal and the semiconductor element 1e, the first surface acoustic wave type duplexer 1d, and the second surface acoustic wave type duplexer 1c. Mounted on the PCB 1 z At the same time, the semiconductor element 1 e, the first surface acoustic wave type duplexer 1 d and the second surface acoustic wave type duplexer 1 c mounted on the ceramic substrate 1 z are hermetically sealed. , Has been modularized.

FIG. 2 is a diagram showing a first modularized pattern of modularization in the circuit configuration of the present invention. The radio transmitting / receiving high-frequency circuit 2a shown in FIG. 2 includes the semiconductor element le, the first surface acoustic wave type duplexer 1d, and the second surface acoustic wave type duplexer 1. In addition to the above, the semiconductor device 1b is also integrally mounted on the ceramic substrate 1z, and the above-mentioned semiconductor devices le and n are mounted on the ceramic substrate 1z. The first surface acoustic wave type duplexer 1 d, the second surface acoustic wave type duplexer 1 c and the sagittal unit 1 b are hermetically sealed and modularized. FIG. 3 is a diagram showing a second modularization pattern of the circuit configuration of the present invention. The high-frequency circuit 2b for wireless transmission and reception shown in FIG. 3 is composed of the semiconductor element le, the first surface acoustic wave type duplexer 1d, the second surface acoustic wave type duplexer 1c, and the circuit lb. In addition to the above, the antenna 1a is also integrally mounted on the ceramic substrate 1z, and at least the semiconductor elements 1e and the first are mounted on the ceramic substrate 1z. The surface acoustic wave type duplexer 1d, the second surface acoustic wave type duplexer 1c, and the sagittal writer 1b are hermetically sealed and modularized.

FIG. 4 is a diagram showing a third modularized pattern of modularization in the circuit configuration of the present invention. The radio transmission / reception high-frequency circuit 2c shown in FIG. 4 is composed of the semiconductor element 1e, the first surface acoustic wave type duplexer 1d, and the second surface acoustic wave type duplexer 1c. The semiconductor element 1e, the first surface acoustic wave type duplexer 1d and the second surface acoustic wave type, which are integrally mounted on the substrate 1z and mounted on the ceramic substrate 1z. The duplexer 1c is hermetically sealed and formed into a module, and the circulator 1b is integrally mounted on the first substrate 1y to be formed into a module, and the antenna 1a is formed into a second module. It is mounted on the board 1X and modularized.

FIG. 5 is a diagram showing a fourth modularization pattern of modularization in the circuit configuration of the present invention. The radio transmission / reception high-frequency circuit 2d shown in FIG. 5 includes the semiconductor element le, the first surface acoustic wave type duplexer 1d, and the second surface acoustic wave type duplexer 1c. The semiconductor element 1e, the first surface acoustic wave type duplexer 1d, and the second surface acoustic wave type duplexer, which are integrally mounted on the ceramic substrate 1z and mounted on the ceramic substrate 1z. 1c is hermetically sealed and modularized, and the above-mentioned circuit 1b and antenna 1a are integrally mounted on the first substrate 1y to be modularized.

The circulator 1b is provided in a magnetic shield structure. The magnetic shield structure is provided with a beam constituting the above-described circulator 1b and a magnetic shielding member provided around a magnet provided near the ferrite. . Further, the semiconductor element 1 e is a heterojunction. It consists of a shunt bipolar transistor. -Further, the above-mentioned antenna 1a may be composed of an antenna pattern provided on the surface of the ceramic substrate 1z, and may be formed on the surface of the second substrate 1X. The antenna may be configured by an antenna pattern provided on the surface of the first substrate 1y.

(B) Description of the first embodiment of the present invention

FIG. 6 is a block diagram of the high-frequency circuit for wireless transmission and reception according to the first embodiment of the present invention. The radio transmission / reception high-frequency circuit 3 shown in FIG. 6 is a high-frequency circuit that transmits a radio signal of its own station and receives a radio signal of another station, and includes a high-output amplifier (semiconductor element) 27 and a surface acoustic wave. Type duplexer (first surface acoustic wave type duplexer) 11a, surface acoustic wave type duplexer (second surface acoustic wave type duplexer) 11b, resistor 3a, resistor 3, antenna 8, and It is composed of a unit for one night and a low noise amplifier.

Here, the high-output amplifier 27 is for amplifying the power of the transmission radio signal, the antenna 8 is for transmitting and receiving the radio signal output by filtering the reception radio signal, and has a low-noise amplifier. Numeral 28 amplifies the output from the surface acoustic wave type duplexer 11a with low noise.

Further, the surface acoustic wave type duplexer 11 a is connected to the output side of the high-output amplifier 27, and filters and outputs the transmission radio signal from the high-output amplifier 27. This surface acoustic wave type duplexer 11a uses a surface acoustic wave that propagates by concentrating its energy on the surface of a medium or an interface with a different medium, and passes only a signal having a predetermined frequency. It functions as a Dobass filter, and this surface acoustic wave type duplexer 11a has two systems of filtering parts. One of these filters the output from the high-power amplifier 27, and the other is reflected by the surface acoustic wave type duplexer 11b, passes through the antenna section 29, and returns from the antenna 8 again. It is grounded via resistor 3a to prevent radiation. In addition, the transmission section 29 inputs a transmission signal from the surface acoustic wave type duplexer 11a to the antenna 8 and inputs a reception signal from the antenna 8 to the surface acoustic wave type duplexer 1lb. And the antenna connected to antenna 8 Terminal 25a and the input terminal 25b for the transmitting wireless signal connected to the surface acoustic wave type duplexer 1 1a and the output terminal 25c for the receiving wireless signal connected to the surface acoustic wave type duplexer 1lb. Having.

Similarly, a surface acoustic wave type duplexer 1 lb is connected to the circuit section 29 to filter and output a received radio signal. This surface acoustic wave duplexer 11b also functions as a band pass filter similarly to the surface acoustic wave duplexer 11a, and has two systems of filtering parts. One of these filters the output from the modulator section 29, and the other transmits a transmission radio signal leaking through the modulator section 29 to the surface acoustic wave type duplexer. It is grounded via resistor 3b to prevent backflow to 1 1b.

In addition, the resistor 3a is connected to the surface acoustic wave type duplexer 11a, and receives the signal power reflected by the surface acoustic wave type duplexer 1 lb through the sagittal section 29 of the received signal. The resistor 3b is connected to the surface acoustic wave type duplexer 11b, and is used to ground the signal power leaked from the transmitter section 29 of the transmission signal. Things.

This block diagram is also used in other embodiments described below. The resistors 3a and 3b are assumed to be mounted in the following other embodiments and modified examples. In the following description, these antenna terminals 25 a, transmission radio signal input terminals 25 b, and reception radio signal output terminals 25 c are simply referred to as terminals 25 a, 25 b, and 25 c. It may be called.

FIG. 7 is a perspective view of the high-frequency circuit module for wireless transmission and reception according to the first embodiment of the present invention. The radio transmission / reception high-frequency circuit module 20a shown in FIG. 7 is a module constituting a radio transmission / reception high-frequency circuit used in the W-CDMA system, and has a multilayer ceramic substrate on a circuit board 31. 10, a cover member 14, and a first substrate 41.

The multilayer ceramic substrate 10 is composed of a high-output amplifier (semiconductor element) 27, a surface acoustic wave type duplexer (first surface acoustic wave type duplexer) 11a, a resistor R connected to them, and a capacitor I. Transmission system components consisting of chip components such as Ngukta L, and a surface acoustic wave duplexer (second surface acoustic wave duplexer) lib, A low-noise amplifier 28 and a receiving system component including a chip component connected thereto are integrally mounted. In addition, the multilayer ceramic substrate 10 has these components in a recess 15, and the circuit pattern such as a signal line or a ground line is provided in the recess 15. Are formed. The reason why ceramic is used as the material of this substrate is that it has excellent airtightness.

Further, a transmission signal input terminal 9c and a reception signal output terminal 9d are provided on the side surface of the multilayer ceramic substrate 10 (the right side in FIG. 7), and the opposite side (the left side in FIG. 7). The output terminal 9a of the transmission signal and the input terminal 9b of the reception signal are provided on the side surface, and three ground terminals 9e are provided on the front side surface.

The lid member 14 is hermetically mounted on the multilayer ceramic substrate 10, and the high-output amplifier 27 mounted on the multilayer ceramic substrate 10, the directional surface wave type duplexer 11a and the surface acoustic wave type duplexer 11b are hermetically sealed. The hermetic seal is such that an inert gas such as nitrogen is injected so that the gas does not come into contact with oxygen. Can be prevented. From now on, at least the surface acoustic wave type duplexer 11a and the surface acoustic wave type duplexer 11b will be hermetically sealed and modularized. It should be noted that although not shown, it is also possible to constitute the air-sealed modularized member only with these two types of surface acoustic wave type duplexer 11a and elastic surface wave type duplexer 11b.

Further, the first board 41 is provided on the circuit board 31 and is electrically connected to the multilayer ceramic board 10 by soldering with a circuit pattern, for example. , And an antenna (antenna pattern 30). The high-output amplifier 27 included in the multilayer ceramic substrate 10 is for amplifying power of a transmission radio signal, and can be composed of, for example, a heterojunction bipolar transistor (HBT). Since the HBT has a higher current density per unit area than a field effect transistor (FET), the area occupied by the chip can be reduced and the circuit can be miniaturized. The surface acoustic wave type duplexer 11a filters and outputs the transmission radio signal from the high power amplifier 27, and the surface acoustic wave type duplexer 11b filters the reception radio signal. Output It is. The low-noise amplifier 28 amplifies the received signal from the surface acoustic wave type duplexer 11 低 with low noise. The chip components such as the resistor R, the capacitor C, and the inductor L are It is used for impedance matching and the like, and has a size of, for example, 10 mm x 5 mm, and is connected to each of the above-mentioned elements by soldering or the like.

Therefore, this high-frequency circuit for wireless transmission and reception has the high-output amplifier 27 and the surface acoustic wave type duplexers 11a and 11b integrally mounted on the multilayer ceramic substrate 10 and the multilayer ceramic substrate. The high-power amplifier 27 and the surface acoustic wave type duplexers 11a and 11b mounted on the printed circuit board 10 are hermetically sealed and modularized, and the circulator 29 and The antenna pattern 30b is integrally mounted on the first substrate 41 to be modularized.

FIG. 8 is an enlarged view of the periphery of the surface acoustic wave type duplexer 11a, 11b. The surface acoustic wave type duplexer 11a, lib on the multilayer ceramic substrate 10 is used for phase adjustment. It consists of a circuit 16, an antenna terminal 16 b, and recesses 15 a, 15 b. Here, the surface acoustic wave type duplexer 11a for transmission is buried in the recess 15a, fixed to the multilayer ceramic substrate 10 by wire bonding, and its output is The side terminal is connected to the phase adjusting circuit 16.

Then, the surface acoustic wave type duplexer 11 a filters the transmission signal input from the low noise amplifier 28 and outputs the signal to the phase adjustment circuit 16. Further, the phase adjusting circuit 16 is composed of a circuit pattern and chip components such as a capacitor C and an ink L arranged in a 7 mm shape, and has a through hole 26 on the circuit pattern. The adjustment circuit 16 and the antenna terminal 16b are electrically connected. The through hole 26 is a hole provided so as to penetrate the multilayer ceramic substrate 10 and the inner wall of the hole is coated with a conductor member. Then, the circuit pattern on the upper surface of the substrate and the circuit pattern on the lower surface are electrically connected through the holes.

Further, the surface acoustic wave type duplexer 11b for reception is also buried in the recess 15b, and is fixed to the multilayer ceramic substrate 10 by wire bonding, and the input is also performed. Side terminal is connected to the phase adjustment circuit 16 to convert the received signal to a low noise amplifier 2 8 (see Figure 7). _ In addition, the phase adjustment circuit 16 transmits the signal at the antenna terminal 16 b so as not to affect the frequency characteristics of both the surface acoustic wave type duplexer 11 a and the surface acoustic wave type duplexer 1 lb. The phase is adjusted so that the load of the surface acoustic wave type duplexer 11a of the credit card is large in the reception band and the load of the surface acoustic wave type duplexer 11b for reception is large in the transmission band. I'm sorry.

The wire bonding is a method of connecting to a signal line or a ground line in an inner layer of the multilayer ceramic substrate 10. FIG. 9 is a diagram showing an example of a cross section of a multilayer substrate using wire bonding. As shown in FIG. 9, the multilayer ceramic substrate 10 is composed of, for example, six layers (10a, 10b, 10c, 10d, 10e, 10f) and a bottom plate. 2 is attached to the sixth layer 10 f. The components (eg, surface acoustic wave type duplexer 11a, surface acoustic wave type duplexer lib, high output amplifier 27, etc.) located in the center of FIG. 9 are provided on the multilayer ceramic substrate 10. The metal wires 44a and 44b are joined to the terminals of this part, and the metal wire 44a on the left side of Fig. 9 is connected to the second layer 10b. It is connected to a circuit pattern 45a, and is connected to a circuit pattern in the fourth layer 10d via a via hole 46a connected to the circuit pattern 45a.

The via hole is a hole provided to electrically connect the respective layers in the multilayer ceramic substrate 10, and the inner wall of the hole is coated with a conductor member. While the through hole 26 penetrates the substrate, the via hole is non-penetrating. Similarly, the metal wire 44 b on the right side of FIG. 9 is connected to the circuit pattern 45 b of the second layer 10 b, and via the via hole 46 b connected to the circuit pattern 45 b, It is connected to the ground patterns of layers 10a to 10f and grounded to the bottom plate 24.

Also, the cross section at the line AA ′ shown in FIG. 7 is as shown in FIG. FIG. 10 is a cross-sectional view of a transmission system of the high-frequency circuit module for wireless transmission / reception 20a according to the first embodiment of the present invention. Signals flow from right to left in FIG. The multilayer ceramic board 10 shown in FIG. 10 is provided on a circuit board 31 and has three islands 42 a, 42 b, and 42 c therein. Some concave A surface acoustic wave type duplexer 11a and a high output pump 27 are provided at each location. Further, the multilayer ceramic substrate 10 has side terminals 9c (9d) on the rightmost side in FIG. 10 and side terminals 9a (9b) on the left side. In addition, the islands 42 a, 42 b, and 42 c are respectively provided with conductive via holes 19 a, 19 b, 19 c, 19 d, 19 e, 1 e provided in the vertical direction. 9 f is provided inside, and the inductor L ₂ , capacitor, and inductor are connected to the circuit pattern on the upper surface connected to these via holes by soldering or the like. The surface on which the inductor L ₂ , the capacitor, and the inductor Li are placed is the original component arrangement surface of the multilayer ceramic substrate 10.

These components are covered with a cover member 14, and are sealed with air by injecting an inert gas such as nitrogen into the cover member 14 so that they do not come into contact with oxygen. Oxidation of a comb-shaped electrode (not shown) in the inside can be prevented. Also, the surface acoustic wave type duplexer 11a or the surface acoustic wave type duplexer 1lb may be configured to be hermetically sealed by being enclosed in a closed member (not shown).

If there is a surface acoustic wave type duplexer that does not require hermetic sealing, it can be configured on another multilayer ceramic substrate (not shown). That is, the radio transmission / reception high-frequency circuit module 20a includes a high-output amplifier (semiconductor element) 27 that amplifies power of a transmission radio signal and a high-output amplifier 27 to form a radio transmission / reception high-frequency circuit. A surface acoustic wave type duplexer (first surface acoustic wave type duplexer) that filters and outputs a transmission radio signal, and a surface acoustic wave type duplexer (second type) that filters and outputs a reception radio signal. Multilayer ceramic board with surface acoustic wave type duplexer) 1 1b and common high-power amplifier 27, surface acoustic wave type duplexer 11a and surface acoustic wave type duplexer 11b (Omitted).

The flow of the transmission signal in FIG. 10 is as follows. That is, the transmission signal is input from the right side terminal 9c soldered to the external circuit pattern 18a. Then, this signal is input to the high-output amplifier 27 embedded in the recess via the circuit pattern 18 b and the via holes 19 a and 19 b in the substrate inner layer. Further, the output signal from the high-power amplifier 27 is buried in the recess through the via hole 19c, the circuit board on the upper surface of the island portion 42b, the via hole 19d, and the via hole 19c. Input to the elastic surface wave type duplexer 11a. The output of the surface acoustic wave type duplexer 11a is connected to the inductor of the island portion 42c via the via hole 19e, and the other end of the inductor L, is connected to the via hole 19a. , Through the circuit pattern 18d, and is output from the left side terminal 9a in FIG. 10 to the external circuit pattern 18e. Then, the transmission signal output from the circuit pattern 18e is input to the first substrate 41 in FIG.

Here, the ground terminal of the surface acoustic wave type duplexer 11a (see FIG. 7) is connected to the ground terminal of the high-power amplifier 27 and the ground terminals of other elements together with the circuit board. Grounded to 3 1 ground pattern 18 c. Also, since the cross section of the receiving system and the signal flow are the same as those of the transmitting system, detailed description thereof will be omitted.

Next, the first substrate 41 shown in FIG. 7 will be described with reference to FIG. FIG. 11 is a cross-sectional view along BB ′ (see FIG. 7) on the first substrate 41. The first substrate 41 shown in FIG. 11 is a multilayer ceramic substrate provided on the bottom plate 24, and a circuit board 29 provided in the center of the substrate (for details, see FIG. 11). And an antenna pattern 30 provided on the surface of the first substrate 41. Therefore, the antenna is constituted by the antenna pattern 30 provided on the surface of the first substrate 41.

The signal flow of the transmission system in FIG. 11 will be described as follows. That is, the transmission signal is input from the side terminal 9 e to the first substrate 41, passes through the circuit pattern 18 f and the via hole 19 g of the inner layer of the first substrate 41, and passes through the circuit pattern on the upper surface. Led to 18 g. The signal input from the terminal 25b of the circuit section 29 is output from another terminal 25a, and the output is the circuit pattern 18h, the via hole 19h, and the inner circuit pattern. The signal is input to an antenna pattern 30 provided on the upper surface of the first substrate 41 via a via hole 18 i and a via hole 19 i. The flow of the symbol in the receiving system follows the same route as that of the transmission signal, and a detailed description thereof will be omitted. As described above, the space in the first substrate 41 is effectively used, so that the size can be reduced and the degree of design freedom can be increased. Next, the circulator section 29 will be described with reference to FIGS. 12 (a) and 12 (b).

FIG. 12 (a) is a perspective view of a magnetic shield used in the circulator section 29 according to the first embodiment of the present invention. The magnetic shield member 14b shown in FIG. 12 (a) performs a magnetic shield, and has a metal flat plate 14c and leg portions 14d. The metal plate 14c is made of a ferromagnetic material such as iron or Niggel, and a plurality of legs 14d are provided on the periphery of the metal plate 14c. The legs 14d are also made of a ferromagnetic material such as iron or nickel, like the metal plate 14c. FIG. 12B is an exploded perspective view showing the circulator section 29 according to the first embodiment of the present invention in an enlarged manner. As shown in Fig. 12 (b), the circuit section 29 is provided in a magnetic shield structure and includes a bottom plate 24, a ferrite 23a, and three types of ferrites. It comprises terminals 25a, 25b, 25c, permanent magnets 22, and a magnetic shield member 14b.

Here, the bottom plate 24 is a flat metal plate made of a ferromagnetic material such as iron or nickel, and the light 23 a is embedded in a cylindrical hole provided in the first substrate 41. It has the function of guiding a magnetic field. Each of the three metal wires is wound around the fiber 23a at an interval of 120 °, and one end of each is wound by ribbon bonding to form a circuit pattern 4 on the upper surface of the first substrate 41. Connected to 3 a, 43 b, 43 c and functioning as terminals 25 a, 25 b, 25 c. Chip components such as a capacitor C and an inductor L are connected to these three terminals 25a, 25b, and 25c, respectively, so that impedance matching is performed. I have. Further, the permanent magnet 22 is provided above the light 23a to apply a constant magnetic field to the light 23a.

Then, these are inserted so as to penetrate through a plurality of through holes 26 provided on the first substrate 41 (see FIG. 11), connected to the bottom plate 24, and The 14d and the bottom plate 24 cooperate to provide a magnetic shield function between the light 23a of the circuit section 29 and the permanent magnet 22. Accordingly, the magnetic shield structure is used to form a wound wire 23a and a wound wire 23a constituting the circuit section 29 of the circuit. This means that a magnetic shield member provided around a magnet (permanent magnet 22) provided close to funilite 23 a is provided.

FIG. 13 is a cross-sectional view taken along CC ′ of the circulator section 29 of FIG. 12 according to the first embodiment of the present invention. In FIG. 13, the center light 23 a and the permanent magnet 22 are electrically connected to the metal flat plate 14 b at the upper end and the bottom plate 24 at the lower end through the through hole 26. It is connected, by which _c and summer so that the magnetic shield is made, a signal from the high power amplifier 2 7 is input to pin 2 5 b of the mono Kiyure Ichita portion 2 9, the signal The direction of the magnetic field is changed by receiving a constant magnetic field given by the permanent magnet 22, guided by the light 23 a, and transmitted from the antenna pattern 30 (see FIG. 7) via the terminal 25 a. Is output. Also, the received signal from the antenna pattern 30 is input to the terminal 25a, then guided by the light 23a, and output from the terminal 25c.

As described above, since the circuit unit is provided in the magnetic shield structure, the circuit unit is provided at a position far from the edge of the multilayer ceramic substrate. However, even if the position of the magnetic shield using only the lid member 14 is insufficient, the magnetic shield can be sufficiently performed. In addition, since the space around the sunshine section 29 can be effectively used, there is an advantage that the size can be reduced.

Furthermore, if attention is paid to miniaturization, such a high-frequency circuit module can be spatially and efficiently mounted using flip-chip mounting. This flip chip mounting will be described with reference to FIGS. 14 (a) and 14 (b).

FIG. 14 (a) is a diagram showing an example of a semiconductor chip using flip chip mounting. The semiconductor chip 48 shown in FIG. 14A includes a functional part such as an amplifier provided at the center thereof and a columnar conductor piece 32.

This element includes a high-power amplifier 27 for power amplifying a transmission radio signal, a surface acoustic wave type duplexer 11a for filtering and outputting a transmission radio signal from the high-output amplifier 27, and a reception radio signal. It is at least one element of the surface acoustic wave type duplexer 11b that outputs waves. The terminals of this element are connected to the surface electrodes 32a to 32d in FIG. 14 (a). These surface electrodes 32a to 32d are connected to this element (high-power amplifier 27 or surface acoustic wave type Plexa for 1 la or 1 lb), connected to the element terminals. Further, the conductor pieces 32 are joined to the surface electrodes 32a to 32d, and this material is, for example, gold (Au). Then, the conductor piece 32 made of gold is formed on the surface electrodes 32a to 32d by the same method as that of wire bonding or by plating.

Further, FIG. 14 (b) is a diagram showing an example of bonding between a semiconductor chip and a substrate using flip chip mounting. After the semiconductor chip 48 shown in FIG. 14 (a) is turned upside down, the circuit pattern 1 formed in the recess in the multilayer ceramic substrate 10 shown in FIG. 14 (b) It is designed to be joined with 8p. Here, as a joining method, a method of joining the circuit pattern 18p by heat and pressure is used. The semiconductor chip 48 and the multilayer ceramic substrate 10 constitute a radio transmission / reception high-frequency circuit 47.

That is, the multilayer ceramic substrate 10 has a circuit pattern 18p formed therein, and the conductor pieces 32 of the semiconductor chip 48 are bonded to the circuit pattern 18p, thereby forming the semiconductor chip. 48 and the circuit pattern 18 p are electrically connected.

The multilayer ceramic substrate 10 also has a thermal via 19 for dissipating the heat generated from the elements to be bonded, particularly the high-power amplifier 27, to the bottom plate 24 (see FIGS. 9 and 13). And a ground pattern 18 c. As described above, by using the flip-chip mounting, the mounting area can be further reduced.

With such a configuration, transmission and reception of wireless signals are performed. Returning to FIG. 7 again, first, in the transmission system, the signal from the high-power amplifier 27 is filtered by the surface acoustic wave type duplexer 11a, passes through the phase adjustment circuit 16 and the side terminal 9a Output from. At this time, the impedance of the surface acoustic wave type duplexer 11 b for reception as seen from the transmission signal is increased by the phase adjustment circuit 16. Then, the signal is transmitted from the antenna pattern 30 via the circuit unit 29 on the first substrate 41.

In the receiving system, the signal from the antenna pattern 30 is output from the first substrate 41 via the storage section 29. After that, the multilayer ceramic base The signal is input to the surface acoustic wave type duplexer 1 fb through the phase adjusting circuit 16 at the plate 10. At this time, the impedance of the surface acoustic wave type duplexer 11a for transmission viewed from the received signal is increased by the phase adjustment circuit 16. Then, the signal is filtered at the surface acoustic wave type duplexer 11 b and then input to the low noise amplifier 28.

FIG. 15 is a diagram showing the density of an electric cascade leaking from the transmission system to the reception system according to the first embodiment of the present invention. The horizontal axis of this Fig. 15 is the frequency from 1.5 GHz to 2.5 GHz (15.00.0 MHz to 25.0 0.0 MHz), and one section is 100 MHz. z. The vertical axis represents the magnitude of the electrical spectrum density leaked to the receiving system. As shown in FIG. 15, in the W—C DMA system, the reception band (locations labeled C and D) and the transmission bandwidth (locations labeled A and B) are 190 MHz. with z spacing. Here, the frequency values at points A, B, C, and D are 1.92 GHz, 1.98 GHz, 2.ll GHz, and 2.17 GHz, respectively. is there. As shown in Fig. 15, the power in the transmission band can be as high as 60 dB, and the signals can be well separated in both transmission and reception systems. Understand.

FIG. 16 is a diagram showing the power spectrum density leaking from the antenna to the receiving system according to the first embodiment of the present invention. The horizontal axis of FIG. 16 also shows the frequency from 1.5 GHz to 2.5 GHz, and the vertical axis also shows the magnitude of the electric spectrum density leaked to the receiving system. As shown in Fig. 16, at point A, attenuation as high as 34.3 dB was obtained, and at point B (1.98 GHz), attenuation as high as 49.5 dB was obtained. Can be obtained. Therefore, the transmission signal can be filtered. In this way, it is possible to apply to a wireless system in which the transmission band and the reception band are separated, such as the W—CDMA system. In other words, using the surface acoustic wave type duplexers 11a and 11b, the antenna pattern 30, the antenna section 29, the surface acoustic wave type duplexers lla and lib, and the high-power amplifier 27 (amplifier chip) As a result, two duplexers are installed in the path from the transmitting side to the receiving side, so that the signal in the transmission band can be sufficiently attenuated and the amount of suppression outside the band Will be secured sufficiently. In addition, a surface acoustic wave type duplexer Since filtering using 11a and 11b can be performed, the signal in the transmission band can be sufficiently attenuated.

In addition, since the high-power amplifier 27 and the surface acoustic wave type duplexers 11a and 11b are mounted on the multilayer ceramic substrate 10 as described above, miniaturization is promoted and wireless transmission and reception are performed. This will contribute to the compactness of the machine. If flip-chip mounting is used, the mounting area can be further reduced.

And, since the circulator section 29 is provided on the magnetic shield structure, a sufficient magnetic shield can be performed regardless of the position on the multilayer ceramic substrate 10. In addition, the space around the sunshine section 29 can be used effectively, and the size can be reduced as well. Furthermore, since the power amplifier chip uses HBT, which has a higher current density per unit area than FET, the area occupied by the chip can be reduced, so that the size can be reduced.

(B 1) Description of Modification of First Embodiment of the Present Invention

The above-described phase adjusting circuit 16 (see FIG. 8) can also be configured by strip lining. FIG. 17 is an enlarged view of the periphery of the surface acoustic wave type duplexers 11a and 11b according to a modification of the first embodiment of the present invention. On the multilayer ceramic substrate 10, a phase adjustment circuit 16 ′ is provided instead of the phase adjustment circuit 16, together with the surface acoustic wave type duplexers 11 a and 11 b. . The phase adjusting circuit 16 ′ has a through hole 26, which is electrically connected to the antenna terminal 16 b provided on the side surface of the multilayer ceramic substrate 10. It is connected. Further, the surface acoustic wave type duplexers l a and l i b are connected to the multilayer ceramic substrate 10 by wire bonding. Since these are the same as those described above, further description of their functions will be omitted.

The phase adjusting circuit 16 ′ is made of a strip line, and is designed so as not to affect the frequency characteristics of both the surface acoustic wave type duplexer 11 a and the surface acoustic wave type duplexer 11 b. At the antenna terminal 16b, the load of the surface acoustic wave duplexer 11a for transmission is large in the reception band, and the load of the surface acoustic wave duplexer 11b for reception is large in the transmission band. The phase is adjusted.

With such a configuration, the surface acoustic wave type duplexer 11a for transmission has a low The transmission signal input from the noise amplifier 28 is filtered and the signal is output to the adjustment circuit 16 '. Also, the received signal is input from the sacrificer section 29 (see FIG. 7) and input to the phase adjustment circuit 16 'so that transmission and reception can be separated.

It should be noted that the circuit section 29 in the first embodiment may have another configuration. FIG. 18 is an exploded perspective view showing, in an enlarged manner, a sagittal section 23 according to a modification of the first embodiment of the present invention. The sink portion 23 shown in FIG. 18 includes a bottom plate 24 made of a ferromagnetic material such as iron or nickel, and a light 23 a buried in a cylindrical hole provided in the substrate. The three metal wires that are wound around the light 23a at an interval of 120 ° and function as terminals, and a permanent wire attached to the upper part of the light 23a. In addition to the magnet 22, it is configured to include magnetic shield members 14 g, 14 h, and 14 i. Since the ferrite 23a, each terminal, and the permanent magnet 22 are the same as those described above, further description is omitted.

—On the other hand, the magnetic shielding members 14 g, 14 h, and 14 i are metal pieces made of a ferromagnetic material such as iron or nickel, and have a plurality of holes provided around the ferrite 23 a. And is connected to the bottom plate 24. These and the bottom plate 24 cooperate with each other to surround the light 23 a of the circuit collector 23 and the permanent magnet 22, thereby exhibiting a magnetic shield function. . That is, similar to FIG. 13, the sagittal heater section 23 is provided inside the magnetic shield structure, and the magnetic shield structure is connected to the sagittal heater section 23. A ferrite with a wound wire 23a to be constituted and a magnetic shielding member provided around a magnet (permanent magnet 22) provided in the vicinity of the ferrite 23a. become.

FIG. 19 is a cross-sectional view taken along the line C ₂ C ₂ ′ of the circulator section 23 of FIG. 18 (a concave portion is formed at the center of the multilayer ceramic substrate 10 shown in FIG. 19). A permanent magnet 22 is provided on this recess, and a permanent magnet 22 is provided thereon. The magnetic shield member consisting of the lid member 14, the magnetic shield member 14g, 14h, 14i, and the bottom plate 24 Magnetic shielding is provided. Also, three gold wires are wound around the ferrite 23a, and are electrically connected to the circuit pattern of the multilayer ceramic substrate 10.

Thus, a signal from the surface acoustic wave type duplexer 11a (see FIG. 7) is input via the terminal 25a, and the magnetic field of the signal is subjected to a constant magnetic field by the permanent magnet 22 and travels in the traveling direction. Is changed, guided by the ferrite 23a, and output from the adjacent terminal 25b. Similarly, the received signal is also input via the terminal 25b, and the magnetic field of the signal is changed in the traveling direction by receiving a constant magnetic field from the permanent magnet 22 and guided by the light 23a. And output from the other adjacent terminal 25.

With such a configuration, in the transmission system, the signal from the high-output amplifier 27 is filtered by the surface acoustic wave type duplexer 11a, passed through the phase adjustment circuit 16 ', and the side terminals 9 The signal is output from a and transmitted from the antenna pattern 30 through the storage section 23. Here, the impedance of the surface acoustic wave duplexer 11b for reception as viewed from the transmission signal is increased by the phase adjustment circuit 16 '. In the receiving system, the signal from the antenna pattern 30 is passed through the phase adjustment circuit 16 ′ on the multilayer ceramic substrate 10 via the circulator section 23, Input to the surface wave duplexer 1 1 b. At this time, the impedance of the surface acoustic wave duplexer 11a for transmission viewed from the received signal is increased by the phase adjustment circuit 16 '. Then, the signal is filtered by the surface acoustic wave type duplexer 11b, and then input to the low noise amplifier 28. It is provided on a magnetic shield structure with 14 g of a small column member made of a ferromagnetic material such as iron or nickel, so it is provided regardless of the position on the multilayer ceramic substrate 10. Sufficient magnetic shielding can be performed. Further, since the space around the condenser section 23 can be effectively used and the size can be reduced, the degree of freedom in designing a substrate is increased. In addition, since two duplexers are interposed in the path from the transmission side to the reception side, signals in the transmission band can be sufficiently attenuated, and the amount of suppression outside the band can be sufficiently secured. Also, the surface acoustic wave type duplexers 11a and 11b Filtering can be performed using the signal, so that signals in the transmission band can be sufficiently detected, and can be used for the W-CDMA system.

(C) Description of the second embodiment of the present invention

The radio transmission / reception high-frequency circuit may have another divided configuration. In other words, the antenna and the circuit can be modularized on separate substrates, and the rest can be integrated with another substrate. In the following description of other embodiments, the configuration of the module is described in detail according to the way of division.

FIG. 20 is a perspective view of a high-frequency circuit module for wireless transmission / reception according to the second embodiment of the present invention. The radio transmission / reception high-frequency circuit module 20b shown in FIG. 20 includes a circuit board 31, a multilayer ceramic board 50 disposed thereon, and a first ceramic board 51a. And a second ceramic substrate 51b.

Here, the multilayer ceramic substrate 50 has a recess 15 in which a circuit pattern such as a signal line and a drain line is formed. The multilayer ceramic substrate 50 is composed of a high-power amplifier 27, a surface acoustic wave type duplexer 11a, and a chip component (resistor R, capacitor inductor L, etc.) connected thereto. System components and a receiving system component consisting of a surface acoustic wave type duplexer lib, a low noise amplifier 28, and chip components connected thereto are mounted on a body. Here, the high-output amplifier 27 is composed of a heterojunction bipolar transistor. Since the surface acoustic wave type duplexer 11a, lib, low noise amplifier 28, and chip components such as resistor R, capacitor C, and inductor L are the same as those described above, further description is omitted. .

Similarly, a transmission signal input terminal 9 c and a reception signal output terminal 9 d are provided on the side surface of the multilayer ceramic substrate 50, and the reception signal input terminal 9 b is provided on the side surface facing the transmission signal input terminal 9 b. A transmission signal output terminal 9a is provided, and three ground terminals 9e are provided on the other side surface. Then, the lid member 14 is mounted on the multilayer ceramic substrate 50, and the high-power amplifier 27 and the surface acoustic wave type duplexer 11a mounted on the multilayer ceramic substrate 50 are mounted. And 1 lb of surface acoustic wave type duplexer. The method is the same as described above. The second ceramic substrate 51b is connected to the first ceramic substrate 51a by "", and the antenna is provided on the surface of the second ceramic substrate 51b. It is composed of pattern 30a.

Further, the first ceramic substrate 51a is connected to the multilayer ceramic substrate 50, and the solar cell section 29A is integrally mounted and modularized. I have. This condenser section 29 A is composed of a terminal 25 b connected to the output terminal 9 a of the multilayer ceramic substrate 50, a terminal 25 a connected to the antenna pattern 30 a, and a multilayer This is a modulator having three types of terminals, a terminal 25c connected to the input terminal 9b of the ceramic substrate 50. Further, the shield section 29 A is provided in a magnetic shield structure, and the magnetic shield structure is provided with a wound ferrite and a coil-forming ferrite section which constitutes the shield section 29 A. It is provided with a magnetic shielding member provided around a magnet provided in the vicinity of the ferrite.

Therefore, this radio transmission / reception high-frequency circuit includes the high-output amplifier 27 and the surface acoustic wave type duplexers 11a and 11b integrally mounted on the multilayer ceramic substrate 50 and the multilayer ceramic substrate. The high-power amplifier 27 and the surface acoustic wave type duplexers 11a and 11b mounted on the mix substrate 50 are hermetically sealed and modularized, and the circuit section of the circuit is also 29A. Are integrally mounted on the first ceramic substrate 51a and are modularized, and the antenna pattern 30a is integrally mounted on the second ceramic substrate 51b and modularized. Will be.

In addition, a cross section of the line DD ′ shown in FIG. 20 is as shown in FIG. FIG. 21 is a cross-sectional view of the transmission system of the radio transmission / reception high-frequency circuit module 2 Ob according to the second embodiment of the present invention. The multilayer ceramic substrate 50 shown in FIG. 21 is provided on a circuit board 31. The multilayer ceramic substrate 50 has three islands 42 d and 4 2 e, 42 f, and a surface acoustic wave type duplexer 11 a and a high-power amplifier 27 are provided in each of the two recesses. These components are electrically connected by wire-bonding. The description of this wire bonding is the same as that described above, and further description will be omitted.

These parts are covered with a lid member 14 and hermetically sealed. The product does not come into contact with oxygen. From this, it becomes possible to prevent oxidation of the comb-shaped electrodes (not shown) in the surface acoustic wave type duplexer. Further, the surface acoustic wave type duplexer 11a or the surface acoustic wave type duplexer 11b may be sealed in a hermetically sealed member (not shown) so as to be hermetically sealed and mounted.

When a surface acoustic wave type duplexer that does not require hermetic sealing can be used, it can be configured on a multilayer ceramic substrate (not shown). That is, the radio transmission / reception high-frequency circuit module 2 Ob is composed of a high-output amplifier (semiconductor element) 27 for power amplifying a transmission radio signal and a high-output amplifier 27 to constitute a radio transmission / reception high-frequency circuit. Surface acoustic wave type duplexer (first surface acoustic wave type duplexer) 1 1a that filters and outputs the wireless signal transmitted from the receiver, and a surface acoustic wave type duplexer (first type) that filters and outputs the received wireless signal. 2 high-power amplifier 27, surface acoustic wave duplexer 11a and surface acoustic wave duplexer 11b with a common multilayer ceramic substrate (1 (Not shown). The high output amplifier 27 is composed of a heterojunction bipolar transistor.

The flow of the transmission signal in FIG. 21 is as follows. That is, the transmission signal is input from the right side terminal 9c soldered to the external circuit pattern 18a, and this signal is transmitted through the circuit layer and the via hole in the inner layer of the island 42f. It is input to the high-power amplifier 27 buried in the recess. Here, the capacitor C is connected at the island 42 f. Further, the output signal from the high-power amplifier 27 is transmitted to the surface acoustic wave type duplexer 11a embedded in the recess through the circuit pattern of the inner layer of the island part 42e, the circuit pattern of the upper surface, and the via hole. Is entered. Here, the capacitor C ₂ is connected at the island 42 e. Here, the ground terminal of the surface acoustic wave type duplexer 11a is used together with the ground terminal of the high-power amplifier 27 and the ground terminals of other elements together with the ground pattern of the circuit board 31. Grounded to 18c. Further, the output of the surface acoustic wave type duplexer 11a is connected to the inductor L of the island part 42, and the other end of the inductor L is connected to the circuit pattern and the via hole. Left side terminal 9a to external circuit pattern 1 8 It is output to e. Note that the cross section of the receiving system and the flow of signals are the same as those in this transmission, and thus detailed description thereof is omitted.

With such a configuration, in the multilayer ceramic substrate 50, in the transmission system, the signal from the high-output amplifier 27 is filtered by the surface acoustic wave type duplexer 11a, and the circuit It is transmitted from the antenna pattern 30a via the data section 29A. In the receiving system, the signal from the antenna pattern 30a is input to the surface acoustic wave type duplexer 11b via the circuit section 29A, filtered, and then filtered by the low-noise amplifier. 2 Entered in 8.

In this way, the size of the components is reduced by integrating the components, and separate substrates can be combined, thus increasing the degree of freedom in designing the substrate. Also, since two duplexers are interposed in the path from the transmission side to the reception side, signals in the transmission band can be sufficiently attenuated, and the amount of suppression outside the band can be sufficiently secured. Furthermore, since filtering is performed using the surface acoustic wave type duplexers 11a and 11b, signals in the transmission band are sufficiently attenuated, and are used for the W-CDMA system. become able to.

(D) Description of the third embodiment of the present invention

FIG. 22 is a perspective view of a high-frequency circuit module for wireless transmission / reception according to the third embodiment of the present invention. The radio transmission / reception high frequency circuit module 20c shown in FIG. 22 includes a circuit board 31, a multilayer ceramic board 50a disposed thereon, and a first board 51c. It is configured.

Here, the multilayer ceramic substrate 50a has a cover member 14 and a concave portion (indentation) 15, in which a high-power amplifier 27, a surface acoustic wave type duplexer 11a and the like are provided. The multi-layer ceramic substrate 50a includes a surface acoustic wave type duplexer lib, a low-noise amplifier 28 and a It is equipped with a receiving system component consisting of chip components (resistor R, capacitor C, inductor L, etc.) connected together, and these are mounted integrally. Further, the multilayer ceramic substrate 50a is composed of the high-output amplifier 27 and the surface acoustic wave type duplexers 11a, 1a mounted on the multilayer ceramic substrate 50a. In order to hermetically seal 1b, a lid member 14 attached to this multilayer ceramic substrate 50a is It is configured with. Here, the high-output amplifier 27 is composed of a hetero-iT junction bipolar transistor.

The multilayer ceramic substrate 50a is provided with a sacrificer section 29B in addition to them. The antenna section 29B is composed of an antenna terminal 25a connected to an antenna pattern 30b for transmitting and receiving radio signals, and a transmission radio signal connected to an elastic surface wave type duplexer 11a. Input terminal 25b and a receiving radio signal output terminal 25c connected to the surface acoustic wave type duplexer 11b.

Further, the sacrificer section 29B is buried in a hole provided in the multilayer ceramic substrate 50a. As in Fig. 13, it is installed inside the magnetic shield structure, and the magnetic shield structure is composed of a wound wire 23a and a coiled light 23a that constitute the solar cell unit 29B. It is provided with a magnetic shielding member provided around a magnet (permanent magnet 22) provided in the vicinity of the light 23a. As a result, the magnetic shield section 29B is sufficiently magnetically shielded irrespective of its position on the multilayer ceramic substrate 50a, and the surrounding space is effectively used. After all, there is an advantage that the size can be reduced.

The multilayer ceramic substrate 50a is connected to the multilayer ceramic section 29B together with these high-output amplifiers 27, surface acoustic wave type duplexers 11a and lib. The high-power amplifier 27, the surface acoustic wave type duplexer 1 la, 1 lb, and the cavity portion 29 B are hermetically sealed with the lid member 14 by mounting integrally on the substrate 50 a. It is configured to seal. Also, the surface acoustic wave type duplexer 11a or the surface acoustic wave type duplexer 11 1) should be sealed and sealed so that it can be mounted by sealing it with a closed member (not shown). Can also. The airtightness is the same as described above.

A transmission signal input terminal 9c and a reception signal output terminal 9d are provided on the side surface of the multilayer ceramic substrate 50a, and a terminal 9f connected to the antenna is provided on the left side surface. In addition, two ground terminals 9e are provided on the front side surface. The <terminal 9f is connected to the circuit unit 29B. The high-power amplifier 27, surface acoustic wave type duplexer 11a, lib, low-noise amplifier 28 and resistor R, Since the chip components such as the capacitor C and the inductor L are the same as those described above, further description is omitted.

Further, a multilayer ceramic substrate 51c for an antenna is connected to the terminal 9f of the multilayer ceramic substrate 50a, and the antenna is mounted on the surface of the multilayer ceramic substrate 51c. The antenna pattern 30b is provided with the antenna pattern 30b.

Therefore, in addition to the high-output amplifier 27 and the surface acoustic wave type duplexers 11a and 11b, the circuit for transmitting and receiving radio waves is also provided with a multilayer ceramic substrate 50a. The high-power amplifier 27, surface acoustic wave type duplexer 11a, lib, and circulator 29B mounted on the multilayer ceramic substrate 50a are hermetically sealed. Therefore, it is modularized.

The cross section at the line EE 'shown in FIG. 22 is as shown in FIG. FIG. 23 is a cross-sectional view of the transmission system of the radio transmission / reception high-frequency circuit module 20c according to the third embodiment of the present invention. The multilayer ceramic substrate 50a shown in FIG. 23 is provided on a circuit substrate 31. The multilayer ceramic substrate 50a has two island portions 42. g, 42h, and two recesses are provided with a surface acoustic wave type duplexer 11a and a high-power amplifier 27, respectively. Further, the lid member 14 is attached so that these parts do not come into contact with oxygen. When a surface acoustic wave type duplexer that does not require hermetic sealing can be used, it can be configured on a multilayer ceramic substrate (not shown). In other words, the high-frequency circuit module for wireless transmission and reception 20 c is a high-frequency amplifier (semiconductor element) 27 that constitutes a high-frequency circuit for wireless transmission and reception, the surface acoustic wave type duplexer (the first surface acoustic wave type). Duplexer 1 1 a and surface acoustic wave type duplexer (second surface acoustic wave type duplexer) 1 lb, plus antenna terminal 25 a connected to an antenna for transmitting and receiving radio signals 25 a, surface acoustic wave type duplexer 1) a circuit part having a transmitting radio signal input terminal 25 b connected to 1a and a receiving radio signal output terminal 2 δ c connected to a surface acoustic wave type duplexer 11 b; As described above, the high-power amplifier 27, the surface acoustic wave type duplexer 11a and the surface acoustic wave type duplexer 11b were integrally mounted on a multilayer ceramic substrate (not shown). it can. Also, in this case, the circuit collector section 29 B is provided in the magnetic anode structure, as in FIG. 13, and the magnetic shield structure is provided in the magnetic storage section 2. 9B, a magnetically shielded member provided around a wound ferrite 23a and a magnet (permanent magnet 22) provided in the vicinity of the ferrite 23a. I have. The high-power amplifier 27 consists of a heterojunction bipolar transistor.

The flow of the transmission signal in FIG. 23 is as follows. That is, the transmission signal is input from the right side terminal 9c via the external circuit pattern 1δa. This signal passes through the circuit pattern of the inner layer of the multilayer ceramic substrate 50a, and It is input to the high-output amplifier 27 buried in the place. In addition, the output signal from the high-power amplifier 27 is transmitted to the surface acoustic wave buried in the recess via the circuit pattern in the inner layer of the island 42h, the via hole, the circuit pattern on the upper surface, and the via hole. Input to the type duplexer 1 1 a. In the island for 42 h, capacity C ₅ and inductor L ₅ are connected. Here, the ground terminal of the surface acoustic wave type duplexer 11a is connected to the ground pattern of the circuit board 31 together with the ground terminal of the high-power amplifier 27 and the ground terminals of other elements. 8c is grounded. Et al is, the output of the surface acoustic wave duplexer 1 1 a is connected to Lee Ngukuta L ₄ of islands 4 2 g, the other end of this Lee Ngukuta L ₄ is a circuit pattern, a via hole, the inner layer through of the circuit pattern is being output from the side surface terminal 9 f of the left side of FIG. ₂ 3 to the outside of the circuit pattern 1 8 e. Since the cross section of the receiving system and the flow of signals are the same as those of the transmitting system, a detailed description thereof will be omitted.

These members are electrically connected by the same wire bonding as described above. The description of this wire bonding is the same as that described above, and further description will be omitted.

With such a configuration, in the multilayer ceramic substrate 50a of FIG. 22, in the transmission system, the signal from the high-output amplifier 27 is filtered by the surface acoustic wave type duplexer 11a. Then, it is transmitted from the antenna pattern 30b through the circuit section 29B of the circuit. In the receiving system, the signal from the antenna pattern 30b is input to the surface acoustic wave type duplexer 11b via the circuit section 29B. After filtering, it is input to the low noise amplifier 28. -In this way, miniaturization is achieved by integration, and separate substrates can be combined, which increases the degree of freedom in substrate design. Also, since two duplexers are interposed in the path from the transmitting side to the receiving side, signals in the transmission band are sufficiently attenuated, and the amount of suppression outside the band is sufficiently secured. In addition, since filtering is performed using the surface acoustic wave type duplexers 11a and 11b, signals in the transmission band are sufficiently attenuated, and the W-CDMA system can be used.

(E) Description of the fourth embodiment of the present invention

FIG. 24 is a perspective view showing the radio transmission / reception high-frequency circuit module according to the fourth embodiment of the present invention with the lid removed. The radio transmission / reception high-frequency circuit module 20 shown in FIG. 24 includes a circuit board 31, a multilayer ceramic board 50 b disposed thereon, and a lid member 14. It is configured.

Here, the multilayer ceramic substrate 50b has a recess 15 in which a high-output amplifier 27, a surface acoustic wave type duplexer 11a and chip components connected thereto are provided.

(A resistor R, a capacitor C, an inductor L, etc.), a transmission system component consisting of: a surface acoustic wave type duplexer 1 1b, a low noise amplifier 28 in the recess 15 It is composed of a receiving system component consisting of chip components and a circuit part 29 C, which are mounted integrally.

Here, the high-output amplifier 27 is composed of a heterojunction bipolar transistor. Then, the lid member 14 is applied to the multilayer ceramic substrate 50b so that the high-power amplifier 27 and the surface acoustic wave type duplexer 11a, lib are hermetically sealed. It is designed to be mounted on the backing board 50b. The airtightness is the same as that described above, so further description is omitted. The antenna section 29 C is an antenna terminal 25 a connected to an antenna pattern 30 for transmitting and receiving radio signals. And a transmission radio signal input terminal 25b connected to the surface acoustic wave type duplexer 11a and a reception radio signal output terminal 25c connected to the surface acoustic wave type duplexer 11b. And, as in Fig. 13, it is provided inside the magnetic shield structure, and the magnetic shield structure is It is provided with a wound wire 23a that constitutes the yule part 29C and a magnetic shielding member provided around a permanent magnet 22 provided in the vicinity of the light 23a. ing. As a result, regardless of the position on the multilayer ceramic substrate 50b, the circuit unit 29C is sufficiently magnetically shielded, and the space around the circuit is effectively used. There is an advantage that the size can be reduced.

Further, in addition to these, the multilayer ceramic substrate 50b includes the antenna pattern 30 and the high-output amplifier 27, the surface acoustic wave type duplexer 11a, lib, and the circuit unit 29C. Together with the multilayer ceramic substrate 50b, and the above-mentioned lid member 14 is used to mount the high-output amplifier 27, the surface acoustic wave type duplexers 11a and 11b, and the circuit 9 C is hermetically sealed. In addition, the surface acoustic wave type duplexer 11a or the surface acoustic wave type duplexer 11b may be configured to be hermetically sealed by being enclosed in a closed member (not shown). .

Therefore, in addition to the high-output amplifier 27, the surface acoustic wave type duplexers 11a and 11b, and the capacitor unit 29C, the antenna for the radio transmission and reception is a multilayer ceramic. The high-power amplifier 27 and the surface acoustic wave type duplexer 11 a and 11 1 which are mounted on the multi-layer ceramic substrate 50 b together with the integrated circuit substrate 50 b. b, the circulator section 29 C and the circulator section 29 C are hermetically sealed and modularized.

In addition, the multilayer ceramic substrate 50b has an output terminal 9p for outputting a received radio signal on a side surface. Note that other chip components such as the surface acoustic wave type duplexer 11a, lib, low noise amplifier 28, resistor R, and capacitor L are the same as those described above, and further description is omitted. I do. These members are electrically connected by wire bonding. The description of this wire bonding is the same as that described above, and further description will be omitted.

If a surface acoustic wave type duplexer that does not require hermetic sealing can be used, it can be configured on a multilayer ceramic substrate (not shown). That is, the radio transmission / reception high frequency circuit module 20d is a radio transmission / reception high frequency circuit. The high-power amplifier (semiconductor device) 27, surface acoustic wave type duplexer (first surface acoustic wave type duplexer) 1 a and surface acoustic wave type duplexer (second surface acoustic wave type duplexer) 1) In addition to 1b and the circuit part of the circuit, the antenna (antenna pattern 30) is connected to the high-power amplifier 27, the surface acoustic wave type duplexer 11a, the surface acoustic wave type duplexer lib and the circuit It can be made to be integrated with a multilayer ceramic substrate (not shown) together with the 29C. Also, in this case, the circuit section 29 C is provided in the magnetic shield structure as in FIG. 13, and the magnetic shield structure is provided in the circuit section section 29. It has a magnetically shielded member provided around a wound wire 23a constituting C and a magnet (permanent magnet 22) provided in the vicinity of the light 23a. . The high-output amplifier 27 is composed of a heterojunction bipolar transistor.

With such a configuration, wireless transmission and reception are performed in the multilayer ceramic substrate 50b of FIG. First, in the transmission system, the signal from the high-power amplifier 27 is filtered by the surface acoustic wave type duplexer 11a, and the terminal for transmitting the radio signal of the transmission section 29C of the transmission section 29C is provided. b and transmitted from antenna pattern 30. In the receiving system, the signal from the antenna pattern 30 is input via the terminal 25a of the circular section 29C, is output from the terminal 25c, and has a surface acoustic wave. The signal is filtered at 1 lb of the type duplexer, input to the low noise amplifier 28, and the signal is output from the side terminal 9p.

In this way, the high-power amplifier 27, the surface acoustic wave type duplexer 11a, 11b, the low-noise amplifier 28, the antenna pattern 30, and the chip components can all be integrated, resulting in miniaturization. Can be. Also, since two duplexers are interposed in the path from the transmission side to the reception side, signals in the transmission band can be sufficiently attenuated, and the amount of suppression outside the band can be sufficiently secured. In addition, since filtering is performed using the surface acoustic wave type duplexers 11a and 11b, signals in the transmission band can be sufficiently attenuated, and can be used for the W-CDMA system. Become. In addition, in this way, wiring for connecting the antenna to the high-frequency circuit components is not required, so that the circuit scale can be reduced, and adjustment around the antenna is not required.

(E 1) Description of Modification of Fourth Embodiment of the Present Invention

FIG. 25 is a perspective view showing a radio transmission / reception high-frequency circuit module according to a modification of the fourth embodiment of the present invention with a lid removed. The radio transmission / reception high-frequency circuit module 20 e shown in FIG. 25 is a module constituting a radio transmission / reception high-frequency circuit. A circuit board 31 and a multilayer ceramic board disposed thereon It is configured with 50 c. Here, the multilayer ceramic substrate 50 c has recesses 15 a and 15 b, an antenna pattern 30, a solar cell section 29 D, and a lid member 14 p , 1 4 n.

The multi-layer ceramic substrate 50c includes a high-power amplifier 27 for power-amplifying the transmission radio signal and a transmission radio signal from the high-output amplifier 27 in the recess 15a. Surface-wave duplexer 1 la for transmitting and outputting, and a transmission system component consisting of chip components, and a surface acoustic wave-type duplexer for filtering and outputting a received radio signal in the recess 15 b 1 1 1 1 b and a receiving system component consisting of a low-noise amplifier 28 and chip components (resistor R, capacitor C, Inktor L, etc.). Here, the high-power amplifier 27 is composed of a heterojunction bipolar transistor.

Further, the circulator section 29 D has an antenna terminal 25 a connected to an antenna pattern 30 for transmitting and receiving radio signals, and a transmission radio signal input terminal connected to a surface acoustic wave type duplexer 11 a. 25 b, having an output terminal 25 c for a received radio signal connected to the surface acoustic wave type duplexer 11 b. The circulator 29 D is integrally mounted on the multilayer ceramic substrate 50 c together with the high-power amplifier 27 and the surface acoustic wave type duplexers 11 a and 11 b. I have.

In addition, the lid members 14 ρ and 14 η are the above-described high-power pump 27 mounted on this multilayer ceramic substrate 50 c, surface acoustic wave type duplexers 11 a and 11 b Is to be hermetically sealed.

That is, the multilayer ceramic substrate 50c sets the antenna pattern 30 to The output amplifier 27, the surface acoustic wave type duplexer 11 a, lib and the sagittal unit 29 D are integrally mounted on the multilayer ceramic substrate 50 c together with the lid member 14 p, 14. n, the high-power amplifier 27 and the surface acoustic wave type duplexer 11a and 11b mounted on the multilayer ceramic substrate 50c are hermetically sealed. I have. Further, the surface acoustic wave type duplexer 11a or the surface acoustic wave type duplexer 1 lb may be sealed in a hermetically sealed member (not shown) so as to be hermetically sealed and mounted. it can.

In addition, a transmission signal input terminal 9r and a reception signal output terminal 9s are provided on the side surface of the multilayer ceramic substrate 50c. Note that the other surface acoustic wave type duplexers 11a, 11b, low noise amplifier 28, and chip components such as resistor R, capacitor C, and inductor L are the same as those described above. Further explanation is omitted.

A cross section of the line FF ′ shown in FIG. 25 is as shown in FIG. FIG. 26 is a cross-sectional view of a transmission system of a radio transmission / reception high-frequency circuit module 20e according to a modification of the fourth embodiment of the present invention. The multilayer ceramic substrate 50c shown in FIG. 26 has a space 15c in which components are arranged, a cavity portion 29D, and a bottom plate 24 provided on the lower surface. .

The left air gap 15c has a high-power amplifier 27 embedded in a recess provided in the substrate, an island 42p, and an elasticity embedded in the recess provided in the substrate. It consists of a surface wave type duplexer 11a, which is mounted integrally with the multilayer ceramic substrate 50c, and a lid member 14p is mounted on the upper part thereof to be hermetically sealed. The method of performing this hermetic sealing is the same as that described above, and further description will be omitted.

Further, these members are electrically connected by wire-to-bonding. The description of this wire bonding is the same as that described above, and further description will be omitted.

Further, the right side of the solar cell section 29 D in FIG. 26 has a bottom plate 24 made of a ferromagnetic material such as iron or nickel and a fan buried in a cylindrical hole provided in the substrate. Wrapped at an angle of 120 ° on the light 23a and this light 23a Three metal wires, a permanent magnet 22 attached to the upper part of the filament 23a, and a magnetic shield member 14 provided with a plurality of legs 14d on the periphery of a metal plate 14c. It consists of b and. Here, one end of each of these three metal wires is connected to the substrate by bonding. The magnetic shield member 14b is made of a ferromagnetic material such as iron or nickel, and the leg portion 14d is formed so as to penetrate through a plurality of through holes 26 provided in the substrate. It is inserted into the substrate and is connected to the bottom plate 24. Then, the central part 23 a and the permanent magnet 22 are electrically connected to each other through the through-hole 26 through the magnetic shield member 14 b located at the upper end and the bottom plate 24 located at the lower end. As a result, magnetic shielding is performed. That is, the circulator section 29 D is provided in a magnetic shield structure, and the magnetic shield structure is provided with a coiled filament 2 constituting the circulator section 29 D. 3a and a magnetic shielding member provided around a permanent magnet 22 provided close to the light 23a.

As a result, regardless of the position on the multilayer ceramic substrate 50c, the magnetic shield section 29D is sufficiently magnetically shielded, and the surrounding space is effectively used. There is an advantage that the size can be reduced.

The functions having the same reference numerals as those described above other than those described above are the same as those described above, and further description will be omitted.

If a surface acoustic wave type duplexer that does not require hermetic sealing can be used, it can be configured on a multilayer ceramic substrate (not shown). That is, the radio transmission / reception high-frequency circuit module 20 e constitutes the radio transmission / reception high-frequency circuit, and includes the high output pump 27, the surface acoustic wave type duplexer 11 a, the surface acoustic wave type duplexer 1 lb, and the circuit In addition to the antenna section 29D, the antenna pattern 30 is connected to the high-power amplifier 27, the surface acoustic wave type duplexer 11a, the surface acoustic wave type duplexer 11b, and the circuit section 29D. At the same time, it can be made to be integrally mounted on a multilayer ceramic substrate (not shown). Further, in this case, the circuit section 29D is provided inside the magnetic shield structure as in FIG. 13, and the magnetic shield structure is provided in the circuit section 29D. A fly with a winding And a magnetic shielding member provided around a permanent magnet 22 provided in close proximity to the light 23a. The high-output amplifier 27 is composed of a heterojunction bipolar transistor.

The flow of the transmission signal in FIG. 26 is from left to right. That is, the input transmission signal passes through the circuit pattern 18a of the inner layer of the multilayer ceramic substrate 50c and is input to the high output amplifier 27 embedded in the recess, and the output signal is , Island part 4 2p through the inner layer circuit pattern and via hole, emerges on the upper surface circuit pattern, via the U-shaped chip component (not shown) connected to this upper surface circuit pattern, the capacitor C _e, is connected to the chip component such as inductor L _e, is La, through a bi Ahoru, is input to the buried surface acoustic wave duplexer 1 1 a in the recess. Here, the ground terminal of the surface acoustic wave type duplexer 11a is grounded together with the ground terminal of the high power amplifier 27 and the ground terminals of other elements together to the bottom plate 24. In addition, the output of the surface acoustic wave type duplexer 11a is input to the terminal 25b of the sinker section 29D in Fig. 26 via the inner layer circuit pattern and via hole. . The signal from the terminal 25b passes through the light 23a, is output from the other terminal 25a, and is transmitted from the antenna pattern 30. Since the cross section of the receiving system and the signal flow are the same as those of the transmitting system, detailed description thereof will be omitted.

With such a configuration, in the multilayer ceramic substrate 50c of FIG. 25, in the transmission system, the signal from the high-power amplifier 27 is filtered by the surface acoustic wave type duplexer 11a, It is transmitted from the antenna pattern 30 via the storage section 29D. In the receiving system, the signal from the antenna pattern 30 is input to the surface acoustic wave type duplexer 11b via the filter section 29D, filtered, and then subjected to low-level filtering. It is input to the noise amplifier 28.

In this way, the high-power amplifier 27, the surface acoustic wave type duplexer 11a, 11b, the low-noise amplifier 28, the antenna pattern 30, and the chip components can all be integrated, and the size can be reduced. Is made. In addition, since two duplexers are interposed in the path from the transmission side to the reception side, signals in the transmission band are sufficiently attenuated, and the amount of suppression outside the band is sufficiently secured. In addition, surface acoustic wave type duplexer 1 Since filtering is performed using la and 11b, signals in the transmission band can be sufficiently attenuated by one, and can be used for the W_CDMA system.

In addition, in this way, wiring for connecting the antenna to the high-frequency circuit components is not required, and the circuit scale can be reduced, and there is an advantage that adjustment around the antenna is unnecessary.

(F) Other

The present invention is not limited to the above-described embodiment and its modifications, and can be implemented in various modifications without departing from the spirit of the present invention.

The position of the permanent magnet 22 in each of the above-described embodiments and the modifications thereof is not limited to the position above the ferrite 23a, and may be provided below the ferrite 23a. In addition, the chip components and circuit patterns such as the resistor R, the capacitor C, and the inductor L shown in each figure can be variously modified and implemented. Further, the circuit patterns may be electrically connected by a method other than soldering.

Further, the surge collector may be constituted by using the shutter section 29 in the first embodiment, or by using the shutter section 23 in the modification of the first embodiment. You may comprise. By terminating the received signal output terminal 25c of the sacrifice without connecting it to a circuit pattern, it can be used as an isolator of a transmission system.

Further, it goes without saying that the present invention can be used not only in the W-C DMA system but also in a wireless system in which the transmission band and the reception band are separated. The air-sealed modules in each of the above-described embodiments and their modifications include a surface acoustic wave type duplexer 11 a, a surface acoustic wave type duplexer lib, a high output amplifier 27, and a 9 (or 29 B, 29 C) ₍ therefore, at least the surface acoustic wave type duplexer 11a and the surface acoustic wave type duplexer 11b) are hermetically sealed and modularized. The surface acoustic wave type duplexer 11a and the surface acoustic wave type duplexer 11b are modularized to provide a high-output amplifier 27, a sacrificial part 29 (or 29 B, 29 C) can be implemented without including it in the module. As the availability ^_ more industry, according to the present invention, can be used surface acoustic wave duplexer sufficiently attenuate signals of the transmission band zone, also out-of-band suppression quantity sufficient In addition, since it is mounted on a single ceramic board, miniaturization is promoted and it contributes to compact wireless transceivers, wireless transmission and reception using the W-CDMA method Can be applied to the high frequency circuit of the machine

Claims

The scope of the claims _

1. a semiconductor element (1e; 27) for power amplifying a transmission radio signal;

Is connected to the output side of the; (2 7 1 _e), the semiconductor device the semiconductor element (1 e; 2 7) first surface acoustic wave duplexer that the transmitting radio signal and outputting the filtered from (I d; 1 1 a)

A second surface acoustic wave type duplexer (1c; 11b) for filtering and outputting a received wireless signal;

An antenna (1a; 30) for transmitting and receiving radio signals;

The antenna (la; 30), the output side of the first surface acoustic wave type duplexer (Id; 11a) and the input side of the second surface acoustic wave type duplexer (1c; lib) With a connected circulator (lb; 29)

At least the semiconductor element (1e; 27), the first surface acoustic wave type duplexer (1d; 11a), and the second surface acoustic wave type duplexer (1c; 11b) Mounted on the common ceramic substrate (1z; 10), and at least the first surface acoustic wave type mounted on the ceramic substrate (1z; 10). The duplexer (Id; 11a) and the second surface acoustic wave type duplexer (1c; 11b) are hermetically sealed and modularized, and are characterized in that they are high-frequency circuits for wireless transmission and reception. .

2. In addition to the above semiconductor device (1e; 27), the first surface acoustic wave type duplexer (1d; 11a) and the second surface acoustic wave type duplexer (1c; 11b) The solar cell (lb; 29B) is also integrally mounted on the ceramic substrate (lz; 50a), and the ceramic substrate (1z; 50a) is also mounted. At least the first surface acoustic wave type duplexer (Id; 11a) and the second surface acoustic wave type duplexer (1c; 11b) mounted on the 2. The radio transmitting / receiving high-frequency circuit according to claim 1, wherein

3. The above semiconductor device (1e; 27), the first surface acoustic wave type duplexer (1 11; a), the second surface acoustic wave type duplexer (1c; 11b) and the Saniki ureter (lb; 29C), and also the antenna (la; 30). The ceramic substrate (1z; 50b) is integrally mounted on the ceramic substrate (1z; 50b), and at least the first substrate is mounted on the ceramic substrate (1z; 50b). The surface acoustic wave type duplexer (1d; 11a) and the second surface acoustic wave type duplexer (1c; 11b) of the present invention are hermetically sealed and modularized. 2. The high-frequency circuit for wireless transmission / reception according to claim 1.

4. The semiconductor element (1e; 27), the first surface acoustic wave type duplexer (1d; 11a) and the second surface acoustic wave type duplexer (1c; 11b) are connected to the semiconductor device. The first surface acoustic wave type duplexer (1d; 1d; 50) mounted integrally with the substrate (1z; 50) and mounted on the ceramic substrate (1z; 50). 1

1a) and the second surface acoustic wave type duplexer (1c; 11b) are hermetically sealed and modularized,

The circuit (1b; 29A) is integrally mounted on the first substrate (1X, 51a), and is modularized.

The antenna according to claim 1, characterized in that the antenna (la; 30a) is integrally mounted on the second substrate (1y; 51b) and modularized. High frequency circuit for wire transmission and reception.

5. The semiconductor element (1e; 27), the first surface acoustic wave type duplexer (1d; 11a) and the second surface acoustic wave type duplexer (1c; 11b) are connected to the semiconductor device. At least the first surface acoustic wave type duplexer (1) mounted on the ceramic substrate (1z; 10) and mounted on the ceramic substrate (1z; 10) at least. I d; 11 a) and the second surface acoustic wave type duplexer (1 c; 11 b) are hermetically sealed, modularized,

The circulator (lb; 29) and the antenna (la; 30) are integrally mounted on the first substrate (1y; 41) to be modularized. 2. The high-frequency circuit for wireless transmission and reception according to claim 1, wherein

6. The circular plate (1b; 29, 29A, 29B, 29C) is provided in a strong magnetically shielded structure, and the magnetically shielded structure is mounted on the circular oscillator (lb). 29, 29 A, 29 B, 29 C) around the wound wire 23 a constituting the magnet and the magnet (22) provided adjacent to the light 23 a. Claim 1 characterized by comprising a magnetic shielding member (14b, 14c, 14d, 14g, 1h, 14i) provided in Item 7. A radio transmission / reception high-frequency circuit according to item 1.

7. A semiconductor element (1e; 27) for power-amplifying the transmission radio signal;

A first surface acoustic wave type duplexer (I) connected to an output side of the semiconductor element (1e; 27) for filtering and outputting a transmission radio signal from the semiconductor element (1e; 27). d; 1 1 a)

A second surface acoustic wave type duplexer (1 c; 11 b) for filtering and outputting a received wireless signal;

An antenna (1a; 30) for transmitting and receiving radio signals;

The antenna (la; 30) and the output side of the first surface acoustic wave type duplexer (1d; 11a) and the input side of the second surface acoustic wave type duplexer (1c; 11b). A high frequency circuit for wireless transmission and reception, characterized by comprising a circuit (1b; 29) connected to and.

8. A semiconductor element ( _1e ; 27) that constitutes a high-frequency circuit for wireless transmission / reception and amplifies a transmission wireless signal, and filters a transmission wireless signal from the semiconductor element ( _1e ; 27). The first surface acoustic wave type duplexer (Id; 11a) that outputs the signal and the second surface acoustic wave type duplexer (1c; 11b) that filters and outputs the received radio signal are integrated. The mounted ceramic substrate (1z; 10)

At least the first elastic surface wave type duplexer (1d; 11a) and the second surface acoustic wave type duplexer mounted on the ceramic substrate (1z; 10). (1c; 11b) is provided with a lid member (14) attached to the ceramic substrate (1z; 10) in order to hermetically seal (1c; 11b). , Wireless transmission and reception Credit high frequency circuit module. ,

9. The semiconductor device (1e; 27), the first surface acoustic wave type duplexer (1d; 11a), and the second surface acoustic wave type duplexer (1e; 27) that constitute a radio transmitting / receiving high-frequency circuit. 1c; 11b), an antenna (1a; 30b) for transmitting / receiving a radio signal, an output side of the first surface acoustic wave type duplexer (Id; 1 la), and an output side of the second The circular element (1b; 29B) connected to the input side of the surface acoustic wave type duplexer (1c; 11b) is connected to the semiconductor element (1e; 27) and the first elastic element. Together with the surface acoustic wave type duplexer (Id; 1 la) and the second surface acoustic wave type duplexer (1c: 11b) on the ceramic substrate (1z; 50a);

At least the first surface acoustic wave type duplexer (1d; 11a) mounted on the ceramic substrate (1z; 50a) by the lid member (14). 9. The high-frequency circuit module for wireless transmission and reception according to claim 8, wherein the second surface acoustic wave type duplexer (1c; 11b) is configured to be air-tightly sealed.

10. The semiconductor element (1e; 27), the first surface acoustic wave type duplexer (1d; 11a), and the second surface acoustic wave type duplexer, which constitute a high-frequency circuit for wireless transmission and reception. (1c; 1 lb) and the circuit (1b; 29) in addition to the semiconductor element (1e; 27) and the first elastic element. The ceramic substrate (1z) together with a surface acoustic wave type duplexer (Id; 11a), a second surface acoustic wave type duplexer (1c; 11b), and a circuit board (lb; 29). ; 1 0)

At least the first surface acoustic wave type duplexer (1d; 11a) mounted on the ceramic substrate (1z; 10) with the lid member (14). 10. The radio transmitting / receiving high-frequency circuit module according to claim 9, wherein the second elastic surface wave type duplexer (1c; 1 lb) is configured to be hermetically sealed.

1 1. In order to construct a high frequency circuit for wireless transmission and reception,

A semiconductor element (1 e; 27) for power amplifying the transmission radio signal; A second elastic surface wave type duplexer (1d; 11a) for filtering and outputting a transmission radio signal from the semiconductor element (le; 27);

A second surface acoustic wave type duplexer (lc; 1lb) for filtering and outputting a received radio signal;

The above semiconductor element (1e; 27) and the first surface acoustic wave type duplexer (Id;

11 a) and the second surface acoustic wave type duplexer (1 c; 11 b) are integrally mounted on a common substrate (1 z; 10). Circuit module.

1 2. The semiconductor element (1e; 27), the first surface acoustic wave type duplexer (Id; 11a), and the second surface acoustic wave type duplexer that constitute a radio transmission / reception high-frequency circuit. (Lc 1 lb), the antenna (la; 30b), the output side of the first elastic surface wave type duplexer (1d; 11a), and the second surface acoustic wave type duplexer. The succulator (1b; 29B) connected to the input side of the plexer (lc; lib) is connected to the semiconductor element (1e; 27) and the first surface acoustic wave type duplexer.

(1d; 11a) and the second surface acoustic wave type duplexer (1c; 11b) together with the substrate (1z; 50a) are integrally mounted on the substrate (1z; 50a). Item 10. The high-frequency circuit module for wireless transmission and reception according to Item 10.

1 3. The above semiconductor element (1e; 27), first surface acoustic wave type duplexer (1d; 11a), second surface acoustic wave type duplexer, which constitutes a high frequency circuit for wireless transmission and reception. In addition to (1c; 1 lb) and sagittating (lb; 29C), the antenna (1a; 30) is connected to the semiconductor element (1e; 27), The surface acoustic wave type duplexer (Id; 11a), the second surface acoustic wave type duplexer (1c; 11b), and the circuit modulator (lb; 29C) together with the substrate (1z; 5). 3. The high-frequency circuit module for wireless transmission / reception according to claim 1, wherein the module is integrated with the radio frequency transmission / reception apparatus.

1 4. Semiconductors that compose the radio transmission / reception high-frequency circuit and amplify the transmission radio signal Element (1e; 27), a first surface acoustic wave type duplexer (1d; 11a) for filtering and outputting a transmission radio signal from the semiconductor element (1e; 27), and a reception radio At least one element of a second surface acoustic wave type duplexer (lc; lib) for filtering and outputting a signal; a surface electrode (32a to 32d) for the element; A semiconductor chip (48) having a conductor piece (32) joined to a surface electrode (32a to 32d);

A circuit pattern (18p) is formed, and the conductor chip (32) of the semiconductor chip (48) is joined to the circuit pattern (18p), thereby forming the semiconductor chip (4p). And (8) a circuit board (10) connected to the circuit pattern (18p).

1 5. The circuit (lb; 29B) is provided in a magnetic shield structure, and the magnetic shield structure is a coil constituting the circuit (lb; 29B). Magnetic shield members (14b, 14c, 14d, 14) provided around the attached ferrite 23a and the magnet (22) provided in the vicinity of the ferrite 23a. 10. The radio transmission / reception high-frequency circuit module according to claim 9, wherein the module comprises: g, 14h, 14i).

1 6. When the first surface acoustic wave type duplexer (1c; 11b) or the second surface acoustic wave type duplexer (Id; 11a) is enclosed by a closed member, 14. The high-frequency circuit module for wireless transmission and reception according to claim 8, wherein the high-frequency circuit module is configured to be hermetically sealed and mounted.