WO2000052699A8 - Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory - Google Patents

Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory

Info

Publication number
WO2000052699A8
WO2000052699A8 PCT/US2000/005699 US0005699W WO0052699A8 WO 2000052699 A8 WO2000052699 A8 WO 2000052699A8 US 0005699 W US0005699 W US 0005699W WO 0052699 A8 WO0052699 A8 WO 0052699A8
Authority
WO
WIPO (PCT)
Prior art keywords
current
bit
diode
magneto resistor
magneto
Prior art date
Application number
PCT/US2000/005699
Other languages
French (fr)
Other versions
WO2000052699A9 (en
WO2000052699A1 (en
Inventor
Richard M Lienau
Original Assignee
Pageant Technologies Usa Inc
Estancia Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/516,046 external-priority patent/US6317354B1/en
Application filed by Pageant Technologies Usa Inc, Estancia Ltd filed Critical Pageant Technologies Usa Inc
Priority to AU36161/00A priority Critical patent/AU3616100A/en
Publication of WO2000052699A1 publication Critical patent/WO2000052699A1/en
Publication of WO2000052699A8 publication Critical patent/WO2000052699A8/en
Publication of WO2000052699A9 publication Critical patent/WO2000052699A9/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

A non-volatile RAM device which utilizes a plurality of ferromagnetic bits (8) each surrounded by a write coil (15) for directing the remnant polarity thereof is disclosed. The direction of magnetic remnance in each bit (8) is dictated by the direction of a current induced into write coil (15). A magneto sensor (9) comprising a magneto resistor (18), coupled to diode (26), is placed approximate each bit (8) and coupled to a sense line (20). The current passing across magneto resistor (18) is biased in a direction either right or left of the original current flow. When current is biased toward the cathode end of diode (26), it is contrary to the preferred flow direction of the diode (26) and does not flow easily there across. The ultimate effect is that the serial resistance of magneto resistor (18) is increased, allowing a smaller amount of current to pass into sense line (20). The amount of current found in the sense line (20) between the bit (8) and the detector (14) determines whether a digital value of '1' or '0' is stored in the magnetic bit (8). A method for storing binary data is also disclosed.
PCT/US2000/005699 1999-03-04 2000-03-02 Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory WO2000052699A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU36161/00A AU3616100A (en) 1999-03-04 2000-03-02 Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12273399P 1999-03-04 1999-03-04
US60/122,733 1999-03-04
US09/516,046 US6317354B1 (en) 1999-03-04 2000-02-29 Non-volatile random access ferromagnetic memory with single collector sensor
US09/516,046 2000-02-29

Publications (3)

Publication Number Publication Date
WO2000052699A1 WO2000052699A1 (en) 2000-09-08
WO2000052699A8 true WO2000052699A8 (en) 2001-03-29
WO2000052699A9 WO2000052699A9 (en) 2001-09-07

Family

ID=26820844

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/005699 WO2000052699A1 (en) 1999-03-04 2000-03-02 Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory

Country Status (1)

Country Link
WO (1) WO2000052699A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5926414A (en) * 1997-04-04 1999-07-20 Magnetic Semiconductors High-efficiency miniature magnetic integrated circuit structures
US5864498A (en) * 1997-10-01 1999-01-26 High Density Circuits Ferromagnetic memory using soft magnetic material and hard magnetic material

Also Published As

Publication number Publication date
WO2000052699A9 (en) 2001-09-07
WO2000052699A1 (en) 2000-09-08

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