WO2000052699A1 - Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory - Google Patents
Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory Download PDFInfo
- Publication number
- WO2000052699A1 WO2000052699A1 PCT/US2000/005699 US0005699W WO0052699A1 WO 2000052699 A1 WO2000052699 A1 WO 2000052699A1 US 0005699 W US0005699 W US 0005699W WO 0052699 A1 WO0052699 A1 WO 0052699A1
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- WIPO (PCT)
- Prior art keywords
- bit
- current
- magneto
- magneto resistor
- sense line
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Definitions
- the Field of the Invention relates to non- volatile random access memory.
- the present invention relates to a magneto resistor sensor with diode short for a non- volatile random access ferromagnetic memory.
- U.S. 4,360,899 to Dimyan et al. teaches a non- volatile random access memory having a plurality of magnetic cells arranged in an array on a major surface of a substrate.
- a single magnetic cell is selected and inductively switched between opposite remanent, (i.e. permanent) states, upon the simultaneous application of electrical pulses to a pair of conductors intersecting adjacent the selected cell.
- Each electrical pulse has an amplitude which is insufficient to inductively switch the remanent state of the selected cell.
- the combined amplitude of the electrical pulses is at least equal to the amplitude required for such a switch.
- U.S. 5,068,826 to Mathews teaches a non-volatile, static magnetic memory device, whose operation is based on the Hall effect.
- the device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar, and a pair of integrally-formed bipolar transistors which are used for amplifying and buffering the Hall voltage produced along the Hall bar.
- current is forced to flow down the length of the Hall bar causing a Hall voltage to be developed in a direction transverse to the direction of both the magnetic field and the current.
- the bases of the bipolar transistors are ohmically coupled to the Hall bar to sense the Hall voltage - the polarity of which is representative of the stored information.
- U.S. 5,295,097 to Lienau teaches a nonvolatile random access memory having a substrate that carries separate magnetically polarizable domains. Each domain is surrounded by a full write loop member, and arranged to penetrate a Hall channel of a dual drain FET with its residual magnetic field. The domains are organized in word rows and bit columns, are each written to by a single full write current through the surrounding loop member, and each read by a comparator connected to the FET drains.
- the memory is capable of being fabricated in a variety of different forms.
- SHRAM sheet random access memory
- the SHRAM is a nonvolatile and transportable memory characterized by its cell density and relatively small size and power requirements, but having the nonvolatile character and rugged transportability of core memory, or magnetic disks or tape.
- the SHRAM is further characterized by a memory comprising a two dimensional magnetic substrate and a fixed driving device for writing and reading into the substrate. Further, a fixed sensing device for sensing the information is attached at each cell location.
- U.S. 5,926,414 to McDowell et al. teaches a magnetic integrated circuit structure in combination with a carrier-deflection-type magnetic field sensor.
- Each of a variety of magnet structures realize a condition in which the magnetic field is substantially orthogonal to the direction of travel of carriers of a sense current, thereby achieving maximum sensitivity.
- a magnetic memory cell By basing a magnetic memory cell on a single minium size MOS device, a small cell may be realized that compares favorably with a conventional DRAM Rof FLASH memory cell.
- the greater degree of control over the magnetic field afforded by the magnetic structures enables the cross-coupling between cells in a memory array to be minimized.
- 3,727,199 to Lekven teaches a magnet memeory element and a process for producing such elements in plurality to constitute a static magnetic memory or digital information storage system.
- Individual binary storage members are afforded directionally preferential magnetic characteristics by flux circuits to establish the preferred axis of magnetization.
- Conductors for driving the individual binary storage members are provided in an organized pattern to accomplish selectivity.
- a batch production process is also disclosed.
- a feature of the invention is to provide a ferromagnetic memory cell, comprising a bit (3), made of a ferromagnetic material, having a remnant polarity.
- a write line (2) located proximate the bit, coupled to receive a current sufficient to create the remnant polarity.
- a magneto sensor (9) which comprises: 1) a magneto resistor (18) positioned proximate the bit (3), having a serial resistance, and a current flow direction responsive to the remnant polarity of the bit (3); and 2) a diode (26), coupled across the magneto resistor to effectively control the serial resistance of the magneto resistor.
- Another feature of the invention is to provide a memory cell with a sense line (20) coupled to the magneto resistor (18).
- the sense line (20) may be coupled to the magneto resistor (18) at a first attachment point which provides current to the magneto resistor(18), and at a second point which receives current transferred across the magneto resistor (18).
- an additional feature of the invention is to provide a memory cell with a detector (11), coupled to the sense line (20), which detects the presence and amount of current in the sense line(20). Particularly, the presence and amount of current in the portion of sense line (20) between the bit (8) and the detector (14) dictates whether a digital "1" or "0" is stored in the bit (8). In one case, the value of a "1" is signified when the amount of current in the sense line (20) between the bit (8) and the detector is greater than an amount present which signifies a "0.”
- the assigned values of "1" and “0” may be changed so that the value of a "1" is signified when an amount of current in the sense line (20) between the bit (8) and the detector is less than an amount signifying a "0.”
- FIG. 1 is a schematic view of a prior art magneto resistor with a shorting bar, having a current flow directed to the right.
- FIG. 2 is a schematic view of a prior art magneto resistor with a shorting bar, having a current flow directed to the left.
- FIG. 3 is a schematic view of a magneto resistor with a diode, as is well known in the prior art, having a current flow to the right.
- the diode has a preferred current flow direction to the right.
- FIG. 4 is a schematic view of a magneto resistor with a diode, as is well known in the prior art, having a current flow to the left.
- the diode has preferred current flow direction to the right
- FIG. 5 is a is a schematic diagram of the nonvolatile random access ferromagnetic memory of the present invention.
- FIG. 6 is a side sectional view of the memory cell elements presented in Fig. 5, having a magneto sensor disposed below a ferromagnetic bit.
- FIG. 7 is a side sectional view of the memory cell elements presented in Fig. 5, having a magneto sensor disposed above a ferromagnetic bit. It is noted that the drawings of the invention are not so scale. The drawings are merely schematic representations, not intended to portray specific parameters of the invention. The drawings are intended to depict only selected embodiments of the invention, and therefore should not be considered a limiting the scope of the invention. The invention will be described with additional specificity and detail through the use of the accompanying drawings. Like numbering between figures represent like elements.
- a magneto sensor in intimate communication therewith.
- Such a device requires no moving parts or refreshing of stored logic signals, and is capable of sensing magnetically stored data at the micron and submicron levels.
- Figs. 1 and 2 there is shown a prior art Hall semiconductor configured as magneto resistor 1 with shorting bar 2 placed midpoint at ninety degrees (90°) along their current flow axis.
- the current received from input line 3 is biased in a selected direction, either left or right, as indicated by flow arrows 5.
- the biasing of current flow occurs because of the presence of a magnetic field (not shown).
- Figures 3 and 4 show magneto resistor 1 , with the shorting bar replaced by a diode 7, having a cathode on the left and an anode on the right. Because the cathode is on the left, diode 7 has a preferred flow direction for negatively charged particles to the right, and is highly resistive to leftward current flow of negatively charged particles toward the cathode on the left.
- current arrows 5 show that current is being biased in a sideward direction by a magnetic field exerted on magneto resistor 1, due to the presence of a magnet (not shown). In Fig. 3, the current is biased to the right due to the remnance of the magnetic field being exerted, while in Fig. 4, the current is biased to the left due to the exertion of a magnetic field with an opposite remnance.
- FIG. 4 shows the opposite condition, with current flow biased toward the left side of magneto resistor 1.
- the electrons are at the cathode end of diode 7, and are presented with a considerably lower resistance, in flowing toward the anode, thus allowing for the conduction of electrons from the left to the right side of diode 7.
- the magneto resistor 1 behaves as if it had a shorting bar, and the effective serial resistance is lowered. Therefore, a large amount of current will be allowed to flow from input line 3, across magneto resistor 1, and out through receiving line 4.
- Fig. 5 is a partial schematic of a four bit byte, four byte random access memory matrix, 100.
- a plurality of individual ferromagnetic bits 8 are each surrounded by a drive, or write coil 15.
- Magneto sensor 9, comprising a magneto resistor with a diode disposed thereon, is placed proximate to the storage bit 8.
- the magnetic field produced by bit 8, which is felt by the magneto sensor, is represented by dashed line 10. It is noted that bit 8 is really located right under or on top of sensor 9, but is best illustrated schematically with the dash line 10.
- the byte drive circuit 13 is used during both set (write) and sense (read) operations to gate the byte select Field Emitting Transistors (FET)s, 11.
- FET Field Emitting Transistors
- the write select circuits 13a & 13b at either end of the bit columns, and labeled bdO through bd3, determine the current direction as defined by the requirement to set a "0" or a "1 " into given memory cells in a given byte. Current thus flows between the upper and lower set select circuits 13a & 13b and the byte select gates 11 for the selected byte. Likewise, during sense, or
- either a digital value of "1" or “0” is assigned to the presence of either a large or small amount of current in sense line 20. For example, if a value of "1,” is assigned to a large amount, and the value of "0"assigned to a small amount, then a digital value of "1” will be indicated when the amount of current in the sense line 20 is larger than the amount when a value of "0" is indicated, and vice versa.
- the digital value Once the digital value has been assigned, it will be programmed into bits 8 as desired, and reflected in the remnant direction of the magnetic polarity of each.
- the remnant direction of each bit is dictated by the direction of a current flowing through write coil 15.
- the magnetic remnance of a bit 8 When current is directed through write coil 15 in one direction, the magnetic remnance of a bit 8 will be caused to store a logical one, and when current is directed in the opposite direction through write coil 15, the remnance of bit 3 will be caused to store a logical zero.
- the direction of magnetic remnance produced by bit 3 biases current flowing through magneto resistor 18 in a direction of either right or left to that of the original flow.
- Current is received into magneto resistor 18 from sense line 20 at a first point of attachment, and exited at a second point of attachment after passing across magneto resister 18.
- Diode 26 is coupled across magneto resistor 18, and in a preferred embodiment diode 26 has a longitudinal length ⁇ inning substantially perpendicular to the longitudinal length of magneto resistor 18.
- Diode 26 may also be placed into substrate 24, and even magneto resistor 18 could also be fabricated into substrate 24.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU36161/00A AU3616100A (en) | 1999-03-04 | 2000-03-02 | Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12273399P | 1999-03-04 | 1999-03-04 | |
US60/122,733 | 1999-03-04 | ||
US09/516,046 | 2000-02-29 | ||
US09/516,046 US6317354B1 (en) | 1999-03-04 | 2000-02-29 | Non-volatile random access ferromagnetic memory with single collector sensor |
Publications (3)
Publication Number | Publication Date |
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WO2000052699A1 true WO2000052699A1 (en) | 2000-09-08 |
WO2000052699A8 WO2000052699A8 (en) | 2001-03-29 |
WO2000052699A9 WO2000052699A9 (en) | 2001-09-07 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2000/005699 WO2000052699A1 (en) | 1999-03-04 | 2000-03-02 | Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory |
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WO (1) | WO2000052699A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5864498A (en) * | 1997-10-01 | 1999-01-26 | High Density Circuits | Ferromagnetic memory using soft magnetic material and hard magnetic material |
US5926414A (en) * | 1997-04-04 | 1999-07-20 | Magnetic Semiconductors | High-efficiency miniature magnetic integrated circuit structures |
-
2000
- 2000-03-02 WO PCT/US2000/005699 patent/WO2000052699A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5926414A (en) * | 1997-04-04 | 1999-07-20 | Magnetic Semiconductors | High-efficiency miniature magnetic integrated circuit structures |
US5864498A (en) * | 1997-10-01 | 1999-01-26 | High Density Circuits | Ferromagnetic memory using soft magnetic material and hard magnetic material |
Also Published As
Publication number | Publication date |
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WO2000052699A8 (en) | 2001-03-29 |
WO2000052699A9 (en) | 2001-09-07 |
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