WO2000046838A3 - Hf vapor phase wafer cleaning and oxide etching - Google Patents

Hf vapor phase wafer cleaning and oxide etching Download PDF

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Publication number
WO2000046838A3
WO2000046838A3 PCT/US2000/002840 US0002840W WO0046838A3 WO 2000046838 A3 WO2000046838 A3 WO 2000046838A3 US 0002840 W US0002840 W US 0002840W WO 0046838 A3 WO0046838 A3 WO 0046838A3
Authority
WO
WIPO (PCT)
Prior art keywords
vapor
semiconductor substrate
substrate
monolayer
conditions
Prior art date
Application number
PCT/US2000/002840
Other languages
French (fr)
Other versions
WO2000046838A2 (en
Inventor
Yong-Pil Han
Herbert S Sawin
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Publication of WO2000046838A2 publication Critical patent/WO2000046838A2/en
Publication of WO2000046838A3 publication Critical patent/WO2000046838A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

The invention provides HF vapor process conditions that can be precisely controlled with a high degree of reproducibility for a wide range of starting wafer conditions. These HF vapor processes for, e.g., etching oxide on a semiconductor substrate, cleaning a contaminant on a semiconductor substrate, removing etch residue from a metal structure on a semiconductor substrate, and cleaning a metal contact region of a semiconductor substrate. In the HF vapor process, a semiconductor substrate having oxide, a contaminant, metal etch residue, or a contact region to be processed is exposed to hydrofluoric acid vapor and water vapor in a process chamber held at temperature and pressure conditions that are controlled to form on the substrate no more than a sub-monolayer of etch reactants and products produced by the vapor as the substrate is processed by the vapor. The sub-monolayer HF vapor process regime is defined in accordance with the invention to proceed under conditions wherein no more than about 95 % of a monolayer of coverage of the substrate surface occurs.
PCT/US2000/002840 1999-02-05 2000-02-04 Hf vapor phase wafer cleaning and oxide etching WO2000046838A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11893799P 1999-02-05 1999-02-05
US60/118,937 1999-02-05

Publications (2)

Publication Number Publication Date
WO2000046838A2 WO2000046838A2 (en) 2000-08-10
WO2000046838A3 true WO2000046838A3 (en) 2001-02-15

Family

ID=22381653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/002840 WO2000046838A2 (en) 1999-02-05 2000-02-04 Hf vapor phase wafer cleaning and oxide etching

Country Status (1)

Country Link
WO (1) WO2000046838A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7645704B2 (en) * 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
CN104860259A (en) * 2014-02-26 2015-08-26 盛美半导体设备（上海）有限公司 Low-pressure vapor-phase etching method
CN104944364B (en) * 2014-03-26 2018-11-06 盛美半导体设备（上海）有限公司 Silica release process
US9653310B1 (en) 2015-11-11 2017-05-16 Applied Materials, Inc. Methods for selective etching of a silicon material
US9831097B2 (en) 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
CN113496891B (en) * 2020-04-03 2023-03-14 重庆超硅半导体有限公司 Self-adaptive uniform corrosion method for oxide film on surface of integrated circuit silicon wafer

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288263A2 (en) * 1987-04-22 1988-10-26 The BOC Group, Inc. Apparatus and method for removing minute particles from a substrate
WO1992022084A1 (en) * 1991-05-21 1992-12-10 Advantage Production Technology, Inc. Organic preclean for improving vapor phase wafer etch uniformity
EP0602633A2 (en) * 1992-12-16 1994-06-22 Texas Instruments Incorporated Method of clean up of a patterned metal layer
WO1994027315A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
EP0732733A1 (en) * 1992-12-08 1996-09-18 Nec Corporation HF vapour selective etching method and apparatus
JPH08316189A (en) * 1995-05-12 1996-11-29 Hitachi Ltd Washing treatment method of substrate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288263A2 (en) * 1987-04-22 1988-10-26 The BOC Group, Inc. Apparatus and method for removing minute particles from a substrate
WO1992022084A1 (en) * 1991-05-21 1992-12-10 Advantage Production Technology, Inc. Organic preclean for improving vapor phase wafer etch uniformity
EP0732733A1 (en) * 1992-12-08 1996-09-18 Nec Corporation HF vapour selective etching method and apparatus
EP0602633A2 (en) * 1992-12-16 1994-06-22 Texas Instruments Incorporated Method of clean up of a patterned metal layer
WO1994027315A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
JPH08316189A (en) * 1995-05-12 1996-11-29 Hitachi Ltd Washing treatment method of substrate

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
HAN Y-P, LAWING A S, SAWIN H H: "Characterization of Silicon Oxide Etching in HF Vapor Process", ELECTROCHEM. SOC., PENNIGTON, NJ, USA, 1998, pages 423 - 430, XP000920581 *
IZUMI A: "A NEW CLEANING METHOD BY USING ANHYDROUS HF/CH3OH VAPOR SYSTEM", JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS,JA,JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, 27 August 1991 (1991-08-27), pages 135 - 137, XP000279433, ISSN: 0021-4922 *
LEE Y -I ET AL: "DRY RELEASE FOR SURFACE MICROMACHINING WITH HF VAPOR-PHASE ETCHING", JOURNAL OF MICROELECTROMECHANICAL SYSTEMS,US,IEEE INC. NEW YORK, vol. 6, no. 3, 1 September 1997 (1997-09-01), pages 226 - 232, XP000727189, ISSN: 1057-7157 *
NAKANISHI N ET AL: "PRECISE CONTROL OF SIO2 ETCHING CHARACTERISTICS USING MONO-LAYER ADSORPTION OF HF/H2O VAPOR", INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS,JA,JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, 21 August 1995 (1995-08-21), pages 255 - 257, XP000544617 *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 03 31 March 1997 (1997-03-31) *

Also Published As

Publication number Publication date
WO2000046838A2 (en) 2000-08-10

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