WO2000041456A3 - Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu - Google Patents
Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu Download PDFInfo
- Publication number
- WO2000041456A3 WO2000041456A3 PCT/DE1999/004096 DE9904096W WO0041456A3 WO 2000041456 A3 WO2000041456 A3 WO 2000041456A3 DE 9904096 W DE9904096 W DE 9904096W WO 0041456 A3 WO0041456 A3 WO 0041456A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- filter layer
- production
- optical detector
- layer made
- porous silicon
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 3
- 229910021426 porous silicon Inorganic materials 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/96—Porous semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000593082A JP2003505856A (ja) | 1999-01-12 | 1999-12-24 | 多孔性シリコン製のフィルタ層を備えた光学検出器及びその製造方法 |
CA002355217A CA2355217A1 (en) | 1999-01-12 | 1999-12-24 | Optical detector with a filter layer made of porous silicon and method for the production thereof |
US09/889,134 US6689633B1 (en) | 1999-01-12 | 1999-12-24 | Optical detector with a filter layer made of porous silicon and method for the production thereof |
EP99967910A EP1151479A2 (de) | 1999-01-12 | 1999-12-24 | Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19900879.5 | 1999-01-12 | ||
DE19900879A DE19900879A1 (de) | 1999-01-12 | 1999-01-12 | Optischer Detektor mit einer Filterschicht aus porösem Silizium und Herstellungsverfahren dazu |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2000041456A2 WO2000041456A2 (de) | 2000-07-20 |
WO2000041456A3 true WO2000041456A3 (de) | 2000-10-19 |
WO2000041456A9 WO2000041456A9 (de) | 2001-09-27 |
Family
ID=7894042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1999/004096 WO2000041456A2 (de) | 1999-01-12 | 1999-12-24 | Optischer detektor mit einer filterschicht aus porösem silizium und herstellungsverfahren dazu |
Country Status (6)
Country | Link |
---|---|
US (1) | US6689633B1 (de) |
EP (1) | EP1151479A2 (de) |
JP (1) | JP2003505856A (de) |
CA (1) | CA2355217A1 (de) |
DE (1) | DE19900879A1 (de) |
WO (1) | WO2000041456A2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10333669A1 (de) * | 2003-07-24 | 2005-03-03 | Forschungszentrum Jülich GmbH | Photodetektor und Verfahren zu seiner Herstellung |
KR101374932B1 (ko) | 2007-09-28 | 2014-03-17 | 재단법인서울대학교산학협력재단 | 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조 |
DE102010004890A1 (de) * | 2010-01-18 | 2011-07-21 | Siemens Aktiengesellschaft, 80333 | Photodiodenarray, Strahlendetektor und Verfahren zur Herstellung eines solchen Photodiodenarrays und eines solchen Strahlendetektors |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995017017A1 (de) * | 1993-12-15 | 1995-06-22 | Forschungszentrum Jülich GmbH | Verfahren zum elektrischen kontaktieren von porösem silizium |
DE4444620C1 (de) * | 1994-12-14 | 1996-01-25 | Siemens Ag | Sensor zum Nachweis elektromagnetischer Strahlung und Verfahren zu dessen Herstellung |
WO1998028781A2 (de) * | 1996-12-20 | 1998-07-02 | Forschungszentrum Jülich GmbH | Schicht mit porösem schichtbereich, eine solche schicht enthaltendes interferenzfilter sowie verfahren zu ihrer herstellung |
WO1999021033A2 (de) * | 1997-10-20 | 1999-04-29 | Forschungszentrum Jülich GmbH | Eine filterstruktur aufweisendes bauelement |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043571A (en) * | 1988-08-01 | 1991-08-27 | Minolta Camera Kabushiki Kaisha | CCD photosensor and its application to a spectrophotometer |
GB9213824D0 (en) * | 1992-06-30 | 1992-08-12 | Isis Innovation | Light emitting devices |
DE4319413C2 (de) * | 1993-06-14 | 1999-06-10 | Forschungszentrum Juelich Gmbh | Interferenzfilter oder dielektrischer Spiegel |
EP0645621A3 (de) * | 1993-09-28 | 1995-11-08 | Siemens Ag | Sensoranordnung. |
DE19608428C2 (de) | 1996-03-05 | 2000-10-19 | Forschungszentrum Juelich Gmbh | Chemischer Sensor |
DE19609073A1 (de) | 1996-03-08 | 1997-09-11 | Forschungszentrum Juelich Gmbh | Farbselektives Si-Detektorarray |
US5939732A (en) * | 1997-05-22 | 1999-08-17 | Kulite Semiconductor Products, Inc. | Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof |
US6350623B1 (en) * | 1999-10-29 | 2002-02-26 | California Institute Of Technology | Method of forming intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same |
-
1999
- 1999-01-12 DE DE19900879A patent/DE19900879A1/de not_active Withdrawn
- 1999-12-24 JP JP2000593082A patent/JP2003505856A/ja not_active Withdrawn
- 1999-12-24 US US09/889,134 patent/US6689633B1/en not_active Expired - Fee Related
- 1999-12-24 WO PCT/DE1999/004096 patent/WO2000041456A2/de not_active Application Discontinuation
- 1999-12-24 EP EP99967910A patent/EP1151479A2/de not_active Withdrawn
- 1999-12-24 CA CA002355217A patent/CA2355217A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995017017A1 (de) * | 1993-12-15 | 1995-06-22 | Forschungszentrum Jülich GmbH | Verfahren zum elektrischen kontaktieren von porösem silizium |
DE4444620C1 (de) * | 1994-12-14 | 1996-01-25 | Siemens Ag | Sensor zum Nachweis elektromagnetischer Strahlung und Verfahren zu dessen Herstellung |
WO1998028781A2 (de) * | 1996-12-20 | 1998-07-02 | Forschungszentrum Jülich GmbH | Schicht mit porösem schichtbereich, eine solche schicht enthaltendes interferenzfilter sowie verfahren zu ihrer herstellung |
WO1999021033A2 (de) * | 1997-10-20 | 1999-04-29 | Forschungszentrum Jülich GmbH | Eine filterstruktur aufweisendes bauelement |
Also Published As
Publication number | Publication date |
---|---|
CA2355217A1 (en) | 2000-07-20 |
WO2000041456A9 (de) | 2001-09-27 |
US6689633B1 (en) | 2004-02-10 |
JP2003505856A (ja) | 2003-02-12 |
DE19900879A1 (de) | 2000-08-17 |
WO2000041456A2 (de) | 2000-07-20 |
EP1151479A2 (de) | 2001-11-07 |
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