WO2000036636A3 - Structure micro-electronique, son procede de production et son utilisation dans une memoire - Google Patents

Structure micro-electronique, son procede de production et son utilisation dans une memoire Download PDF

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Publication number
WO2000036636A3
WO2000036636A3 PCT/DE1999/003926 DE9903926W WO0036636A3 WO 2000036636 A3 WO2000036636 A3 WO 2000036636A3 DE 9903926 W DE9903926 W DE 9903926W WO 0036636 A3 WO0036636 A3 WO 0036636A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxygen
conductive layer
microelectronic structure
capacitor electrode
sensitive structures
Prior art date
Application number
PCT/DE1999/003926
Other languages
German (de)
English (en)
Other versions
WO2000036636A2 (fr
Inventor
Hermann Wendt
Gerhard Beitel
Hans Reisinger
Original Assignee
Infineon Technologies Ag
Hermann Wendt
Gerhard Beitel
Hans Reisinger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Hermann Wendt, Gerhard Beitel, Hans Reisinger filed Critical Infineon Technologies Ag
Publication of WO2000036636A2 publication Critical patent/WO2000036636A2/fr
Publication of WO2000036636A3 publication Critical patent/WO2000036636A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention vise à créer une structure micro-électronique qui empêche une oxydation de structures sensibles à l'oxygène (25). A cet effet, la structure micro-électronique présente une couche conductrice (10) constituée d'un alliage platine-iridium. Lors d'un traitement de la structure micro-électronique dans une atmosphère renfermant de l'oxygène, l'iridium empêche la diffusion d'oxygène à travers la couche conductrice (10) par fixation de l'oxygène et protège ainsi les structures sensibles à l'oxygène (25) situées sous la couche conductrice (10).
PCT/DE1999/003926 1998-12-17 1999-12-08 Structure micro-electronique, son procede de production et son utilisation dans une memoire WO2000036636A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19858357.5 1998-12-17
DE1998158357 DE19858357A1 (de) 1998-12-17 1998-12-17 Mikroelektronische Struktur sowie Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
WO2000036636A2 WO2000036636A2 (fr) 2000-06-22
WO2000036636A3 true WO2000036636A3 (fr) 2000-08-10

Family

ID=7891495

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1999/003926 WO2000036636A2 (fr) 1998-12-17 1999-12-08 Structure micro-electronique, son procede de production et son utilisation dans une memoire

Country Status (3)

Country Link
DE (1) DE19858357A1 (fr)
TW (1) TW440899B (fr)
WO (1) WO2000036636A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3581904B1 (fr) * 2018-06-15 2021-06-02 Melexis Technologies NV Métallisation de platine

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609081A2 (fr) * 1993-01-27 1994-08-03 Texas Instruments Incorporated Connexions électriques améliorées à des matériaux diélectriques
WO1997001854A1 (fr) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Couche barriere pour condensateur ferroelectrique integre sur silicium
US5619393A (en) * 1994-08-01 1997-04-08 Texas Instruments Incorporated High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers
JPH10173138A (ja) * 1996-12-11 1998-06-26 Fujitsu Ltd 半導体メモリおよびその製造方法
JPH10242399A (ja) * 1997-02-27 1998-09-11 Samsung Electron Co Ltd 高誘電キャパシタ及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
KR100200299B1 (ko) * 1995-11-30 1999-06-15 김영환 반도체 소자 캐패시터 형성방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609081A2 (fr) * 1993-01-27 1994-08-03 Texas Instruments Incorporated Connexions électriques améliorées à des matériaux diélectriques
US5619393A (en) * 1994-08-01 1997-04-08 Texas Instruments Incorporated High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers
WO1997001854A1 (fr) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Couche barriere pour condensateur ferroelectrique integre sur silicium
JPH10173138A (ja) * 1996-12-11 1998-06-26 Fujitsu Ltd 半導体メモリおよびその製造方法
US5905278A (en) * 1996-12-11 1999-05-18 Fujitsu Limited Semiconductor device having a dielectric film and a fabrication process thereof
JPH10242399A (ja) * 1997-02-27 1998-09-11 Samsung Electron Co Ltd 高誘電キャパシタ及びその製造方法
US5892254A (en) * 1997-02-27 1999-04-06 Samsung Electronics Co., Ltd. Integrated circuit capacitors including barrier layers having grain boundary filling material

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 11 30 September 1998 (1998-09-30) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14 31 December 1998 (1998-12-31) *

Also Published As

Publication number Publication date
DE19858357A1 (de) 2000-06-29
TW440899B (en) 2001-06-16
WO2000036636A2 (fr) 2000-06-22

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