WO1999065104A1 - Resistive-load hyperfrequency passive component - Google Patents

Resistive-load hyperfrequency passive component Download PDF

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Publication number
WO1999065104A1
WO1999065104A1 PCT/FR1999/001362 FR9901362W WO9965104A1 WO 1999065104 A1 WO1999065104 A1 WO 1999065104A1 FR 9901362 W FR9901362 W FR 9901362W WO 9965104 A1 WO9965104 A1 WO 9965104A1
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WIPO (PCT)
Prior art keywords
elements
component
resistive
resistance
inductive
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PCT/FR1999/001362
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French (fr)
Inventor
Philippe Lemerle
Gilles Picard
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Deti (Societe Anonyme)
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Application filed by Deti (Societe Anonyme) filed Critical Deti (Societe Anonyme)
Priority to AU41481/99A priority Critical patent/AU4148199A/en
Priority to EP99925061A priority patent/EP1086507B1/en
Priority to DE69910383T priority patent/DE69910383D1/en
Publication of WO1999065104A1 publication Critical patent/WO1999065104A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations

Definitions

  • the present invention relates to the field of passive microwave components and more particularly to passive microwave components with resistive load intended for power dissipation comprising a resistive element suitable for 25 to 75 ohms and, most often, for the standard of 50 ohms.
  • microwave-ribbons These components are used in different microwave systems (from 0.5 GHz) and are intended to protect installations by dissipating non-active energy from the system through a suitable medium in the event of a malfunction. They are most often connected to structures of microwave lines called "micro-ribbons”.
  • Passive microwave components generally include a power dissipation support, on which are positioned a wiring range, a mass range and a resistive layer having a standard resistance between the wiring range and the mass range and also include elements of microwave adaptation.
  • FR-A-2 096 858 which relates to a resistive load, but this load does not constitute a component intended for power dissipation and the adaptation is carried out by placing a resistive film on the side of the support.
  • this technique of implementing the resistive load is very complex to master.
  • the prior art also knows Japanese patent application JP-07 221 509 which relates to the adaptation of a component with elements external to it, but this component does not include simple internal adaptation and a fortiori d internal adaptation of multiple order.
  • passive microwave components comprising a beryllium oxide dissipation support, so as to promote the heat exchange between the power absorbed by the resistive load and this support and heat distribution support on which the resistive load is etched.
  • Beryllium oxide is one of the materials which presents the best compromise between a high thermal conductivity and a low dielectric constant.
  • the present invention intends to remedy the drawbacks of the prior art by proposing a passive microwave component intended for power dissipation which comprises completely integrated capacitive and inductive microwave adaptation elements, located on the upper surface of the component, outside the layer. resistive, in order to achieve a multiple order adaptation, by multiplying the inductive elements in series and the capacitive elements in parallel.
  • the present invention further proposes to use a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina.
  • a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina.
  • the depositor has developed a component image such that it makes it possible to obtain characteristics at least equal, sometimes even superior to the characteristics of the beryllium oxide supports, while keeping the same sizing.
  • Alumina also has the advantage of being much less expensive to manufacture and much easier to implement.
  • the present invention also proposes to use a support material made of aluminum nitride.
  • An important advantage of the invention is that it makes it possible to produce a passive microwave component with an alumina support, unique, added, which is adapted in frequency for a power greater than 30 Watts and which can reach 60 to 80 Watts and even more.
  • the component according to the invention makes it possible for example to obtain a TOS very close to 1 for a given frequency or for a frequency range which can be very large.
  • the component allows for example to obtain a TOS less than 1.05 between
  • the geometric dimension of the adaptation elements is adapted to the dimension and the power of the component.
  • the multiple adaptation can be carried out by: one or more inductive pre-resistance elements situated in series between the wiring range and the resistive layer; and / or one or more pre-resistance capacitive elements located in parallel between the wiring area and the resistive layer; and / or - one or more post-resistance inductive elements located in series between the resistive layer and the mass range.
  • FIGS. 3 and 4 illustrate a more complex version of the component according to the invention, seen respectively in perspective and in section along BB
  • FIG. 5 illustrates the simplified equivalent diagram of the simple component of FIGS. 1 and 2
  • FIG. 6 illustrates the simplified equivalent diagram of the complex component of FIGS. 3 and 4.
  • FIG. 7 illustrates a diagram of the TOS obtained as a function of frequency, using a component according to the invention (curve B) compared to a conventional component (curve A),
  • FIG. 8 illustrates the Smith diagram of the component of curve A
  • the present invention relates to a passive microwave component with resistive load (1) intended for power dissipation, illustrated in FIGS. 1 and 2, comprising a support (2), a wiring range (3), a mass range (4 ) and a resistive layer (5) having a standard resistance between the wiring range (3) and the mass range (4).
  • the component according to the invention is characterized in that it includes completely inductive and capacitive microwave adaptation elements integrated, external to the resistive layer (5) in order to carry out a multiple order adaptation, by multiplying the inductive elements in series and the capacitive elements in parallel.
  • the component according to the invention is also characterized in that said microwave adaptation elements have geometric dimensions adapted to the dimension and the power of the component.
  • Metallization is carried out on the underside (7) of the component (1). It constitutes the ground connection and is therefore called "ground plan”.
  • the resistive layer (5) is deposited on the upper surface (8) of the component (1), in contact with the two metallic areas of wiring (3) and ground (4).
  • the wiring range (3) constitutes the input connection of the resistive load and the mass range (4) allows the connection with the ground plane (7) via one or more holes (6) including the walls are metallized, opening on either side of the lower and upper surfaces.
  • FIG. 5 shows a simplified equivalent diagram of the complete resistive load of FIGS. 1 and 2.
  • the resistive layer (5) is modeled by the resistance R5 which is the main element of the load, supplemented by the capacitance C5 as well as the inductance L5 arranged between the resistive layer (5) and the ground plane (7).
  • FIGS. 3 and 4 we find the same elements as in the simple version illustrated in FIGS. 1 and 2, but the metallized areas (3) and (4) are produced in a more complex pattern.
  • Said microwave adaptation elements consist of: - one or more inductive pre-resistance elements (9) located in series between the wiring area (3) and the resistive layer (5), - one or more pre-resistance capacitive elements (10) located in parallel between the wiring area (3) and the resistive layer (5), the capacitive phenomenon being created between the wiring area (3) and the plane mass (7), and
  • Said pre-resistance inductive element (9) can, for example, consist of a narrow line (12).
  • Said pre-resistance capacitive element (10) can be, for example, constituted by a wide line (13), and / or by an insulating gap (15).
  • Said post-resistance inductive elements (11) can, for example, consist of one or more holes (6) whose walls are metallized and / or of a narrow line (14).
  • the component (1) illustrated by way of example in FIGS. 3 and 4 comprises a pre-resistance inductive element (9), a pre-resistance capacitive element (10) and two post-resistance inductive elements (11) constituted by holes ( 6) and a narrow line (14).
  • the narrow line (12) forms an inductance in series L9
  • the wide line (13) forms a capacitance in parallel C10
  • the narrow line (14) constitutes a complementary inductance L11.
  • FIG. 6 shows the role of elements C10, L9, L11 and L6 as compensators for elements C5 and L5 contained in the resistive layer (5) in addition to the main element R5.
  • the above assembly constitutes, according to the state of the art, a fourth order adaptation circuit capable of compensating for the faults of the impedance measured at range (3) up to third order.
  • the support (2) is made of aluminum oxide.
  • the component according to the invention makes it possible to dissipate energies from 5 to 100 Watts, while keeping the same size as the beryllium oxide components.
  • the operating frequencies can reach 1 to 5 GHz or more depending on the power to be dissipated.
  • FIGS. 8 and 9 which illustrate the respective Smith diagrams of curves A and B clearly show that, in the case of a conventional component, the impedance is only capacitive whereas in the case of a component according to the invention, the impedance is alternately inductive then capacitive, then inductive.
  • the support (2) is made of aluminum nitride.
  • the component according to the invention thus produced makes it possible to achieve higher dissipated power performances (at specified frequency) or higher operating frequencies (at given dissipated power) than those of the beryllium oxide components.
  • the mass return is preferably done by metallized edge.

Abstract

The present invention relates to a resistive-load hyperfrequency passive component (1) for power dissipation, comprising a support (2), a wiring area (3), a ground area (5) and a resistive layer (5) exhibiting a standard resistance between the wiring area (3) and the ground area (4). The invention is characterised in that it comprises fully integrated hyperfrequency adaptation capacitive and inductive elements outside the resistive layer (5) in order to achieve multiple adaptation by means of serial multiplication of the inductive elements and parallel multiplication of the capacitive elements.

Description

COMPOSANT PASSIF HYPERFREQUENCE A CHARGE RESISTIVE PASSIVE MICROPHONE COMPONENT WITH RESISTIVE LOAD
La présente invention se rapporte au domaine des composants passifs hyperfréquence et plus particulièrement aux composants passifs hyperfréquence à charge résistive destinés à la dissipation de puissance comportant un élément résistif adapté de 25 à 75 ohms et, le plus souvent, au standard de 50 ohms.The present invention relates to the field of passive microwave components and more particularly to passive microwave components with resistive load intended for power dissipation comprising a resistive element suitable for 25 to 75 ohms and, most often, for the standard of 50 ohms.
Ces composants sont utilisés dans différents systèmes hyperfréquences (à partir de 0,5 GHz) et sont destinés à protéger les installations en dissipant au travers d'un support adapté l'énergie non active du système en cas de dysfonctionnement. Ils sont le plus souvent connectés sur des structures de lignes hyperfréquences dites « micro-rubans ».These components are used in different microwave systems (from 0.5 GHz) and are intended to protect installations by dissipating non-active energy from the system through a suitable medium in the event of a malfunction. They are most often connected to structures of microwave lines called "micro-ribbons".
Les composants passifs hyperfréquence comportent généralement un support de dissipation de puissance, sur lequel sont positionnés une plage de câblage, une plage de masse et une couche résistive présentant une résistance standard entre la plage de câblage et la plage de masse et comportent également des éléments d'adaptation hyperfréquence.Passive microwave components generally include a power dissipation support, on which are positioned a wiring range, a mass range and a resistive layer having a standard resistance between the wiring range and the mass range and also include elements of microwave adaptation.
L'art antérieur connaît déjà des dispositifs dans lesquels des éléments d'adaptation hyperfréquences sont associés à une charge résistive.The prior art already knows devices in which microwave adaptation elements are associated with a resistive load.
L'art antérieur connaît par exemple la demande de brevet françaisThe prior art knows for example the French patent application
FR-A-2 096 858 qui porte sur une charge résistive, mais cette charge ne constitue pas un composant destiné à la dissipation de puissance et l'adaptation est réalisée en disposant un film résistif sur la flanc du support. Or cette technique de mise en œuvre de la charge résistive est très complexe à maîtriser.FR-A-2 096 858 which relates to a resistive load, but this load does not constitute a component intended for power dissipation and the adaptation is carried out by placing a resistive film on the side of the support. However, this technique of implementing the resistive load is very complex to master.
L'art antérieur connaît également la demande de brevet japonaise JP-07 221 509 qui porte sur l'adaptation d'un composant avec des éléments extérieur à celui-ci, mais ce composant ne comporte pas d'adaptation interne simple et a fortiori d'adaptation interne d'ordre multiple. L'art antérieur connaît aussi des composants passifs hyperfréquences comportant un support de dissipation en oxyde de béryllium, de façon à favoriser l'échange thermique entre la puissance absorbée par la charge résistive et ce support d'accueil et de diffusion de la chaleur sur lequel la charge résistive est gravée. L'oxyde de béryllium est un des matériaux qui présentent le meilleur compromis entre une forte conductivité thermique et une faible constante diélectrique.The prior art also knows Japanese patent application JP-07 221 509 which relates to the adaptation of a component with elements external to it, but this component does not include simple internal adaptation and a fortiori d internal adaptation of multiple order. The prior art also knows passive microwave components comprising a beryllium oxide dissipation support, so as to promote the heat exchange between the power absorbed by the resistive load and this support and heat distribution support on which the resistive load is etched. Beryllium oxide is one of the materials which presents the best compromise between a high thermal conductivity and a low dielectric constant.
L'inconvénient majeur de l'oxyde de béryllium est sa nocivité et c'est la raison pour laquelle son utilisation est soumise à de nombreuses contraintes. Il existe, suivant les législations nationales, des obligations :The major drawback of beryllium oxide is its harmfulness and this is the reason why its use is subject to many constraints. According to national laws, there are obligations:
- de notification claire de la présence d'oxyde de béryllium sur le produit fini,- clear notification of the presence of beryllium oxide on the finished product,
- de description du produit suivant les règlements d'hygiène et de sécurité,- description of the product according to health and safety regulations,
- de contrôle du retrait des appareils usagés et de leur recyclage,...- checking the removal of used devices and their recycling, ...
La présente invention entend remédier aux inconvénients de l'art antérieur en proposant un composant passif hyperfréquence destiné à la dissipation de puissance qui comporte des éléments d'adaptation hyperfréquences capacitifs et inductifs complètement intégrés, situés sur la surface supérieure du composant, extérieurement à la couche résistive, afin de réaliser une adaptation d'ordre multiple, en multipliant les éléments inductifs en série et les éléments capacitifs en parallèle.The present invention intends to remedy the drawbacks of the prior art by proposing a passive microwave component intended for power dissipation which comprises completely integrated capacitive and inductive microwave adaptation elements, located on the upper surface of the component, outside the layer. resistive, in order to achieve a multiple order adaptation, by multiplying the inductive elements in series and the capacitive elements in parallel.
La présente invention propose, en outre, d'utiliser un matériau de support qui n'est pas nocif, en l'occurrence l'oxyde d'aluminium AL2O3 ou alumine. Pour compenser les moins bonnes qualités de l'alumine, le déposant a développé une image de composant telle qu'elle permette d'obtenir des caractéristiques au moins égales, parfois même supérieures aux caractéristiques des supports en oxyde de béryllium, tout en gardant le même dimensionnement.The present invention further proposes to use a support material which is not harmful, in this case aluminum oxide AL 2 O 3 or alumina. To compensate for the poorer qualities of alumina, the depositor has developed a component image such that it makes it possible to obtain characteristics at least equal, sometimes even superior to the characteristics of the beryllium oxide supports, while keeping the same sizing.
L'alumine présente en plus l'avantage d'être beaucoup moins coûteuse à fabriquer et beaucoup plus facile à mettre en œuvre.Alumina also has the advantage of being much less expensive to manufacture and much easier to implement.
La présente invention propose également d'utiliser un matériau de support en nitrure d'aluminium.The present invention also proposes to use a support material made of aluminum nitride.
Un avantage important de l'invention est de permettre de réaliser un composant passif hyperfréquence à support en alumine, unique, rapporté, qui soit adapté en fréquence pour une puissance supérieure à 30 Watts et pouvant atteindre 60 à 80 Watts et même plus.An important advantage of the invention is that it makes it possible to produce a passive microwave component with an alumina support, unique, added, which is adapted in frequency for a power greater than 30 Watts and which can reach 60 to 80 Watts and even more.
Le composant selon l'invention permet par exemple d'obtenir un TOS très proche de 1 pour une fréquence donnée ou pour une plage de fréquence qui peut être très grande. Le composant permet par exemple d'obtenir un TOS inférieur à 1 , 05 entreThe component according to the invention makes it possible for example to obtain a TOS very close to 1 for a given frequency or for a frequency range which can be very large. The component allows for example to obtain a TOS less than 1.05 between
0, 5 GHz et 3,5 GHz. Pour obtenir ces résultats, il est nécessaire de réaliser un adaptation multiple à la fois en inductance et en capacité.0.5 GHz and 3.5 GHz. To obtain these results, it is necessary to carry out a multiple adaptation both in inductance and in capacity.
La dimension géométrique des éléments d'adaptation est adaptée à la dimension et à la puissance du composant. Selon l'invention, l'adaptation multiple peut être réalisée par : un ou plusieurs éléments inductifs pré-résistance situés en série entre la plage de câblage et la couche résistive ; et / ou un ou plusieurs éléments capacitifs pré-résistance situés en parallèle entre la plage de câblage et la couche résistive ; et / ou - un ou plusieurs éléments inductifs post-résistance situés en série entre la couche résistive et la plage de masse.The geometric dimension of the adaptation elements is adapted to the dimension and the power of the component. According to the invention, the multiple adaptation can be carried out by: one or more inductive pre-resistance elements situated in series between the wiring range and the resistive layer; and / or one or more pre-resistance capacitive elements located in parallel between the wiring area and the resistive layer; and / or - one or more post-resistance inductive elements located in series between the resistive layer and the mass range.
D'autres avantages ressortiront de la description faite ci-après de l'invention à titre purement explicatif en référence aux figures annexées : - les figures 1 et 2 illustrent une version simple du composant selon l'invention, vu respectivement en perspective et en coupe selon AA,Other advantages will emerge from the description given below of the invention for purely explanatory purposes with reference to the appended figures: - Figures 1 and 2 illustrate a simple version of the component according to the invention, seen respectively in perspective and in section according to AA,
- les figures 3 et 4 illustrent une version plus complexe du composant selon l'invention, vu respectivement en perspective et en coupe selon BB, la figure 5 illustre le schéma équivalent simplifié du composant simple des figures 1 et 2,FIGS. 3 and 4 illustrate a more complex version of the component according to the invention, seen respectively in perspective and in section along BB, FIG. 5 illustrates the simplified equivalent diagram of the simple component of FIGS. 1 and 2,
- la figure 6 illustre le schéma équivalent simplifié du composant complexe des figures 3 et 4.FIG. 6 illustrates the simplified equivalent diagram of the complex component of FIGS. 3 and 4.
- La figure 7 illustre un diagramme du TOS obtenu en fonction de la fréquence, grâce à un composant selon l'invention (courbe B) par rapport à un composant classique (courbe A),FIG. 7 illustrates a diagram of the TOS obtained as a function of frequency, using a component according to the invention (curve B) compared to a conventional component (curve A),
- La figure 8 illustre le diagramme de Smith du composant de la courbe A, etFIG. 8 illustrates the Smith diagram of the component of curve A, and
- La figure 9 illustre le diagramme de Smith du composant selon l'invention de la courbe B.- Figure 9 illustrates the Smith diagram of the component according to the invention of curve B.
La présente invention se rapporte à un composant passif hyperfréquence à charge résistive (1) destiné à la dissipation de puissance, illustré figures 1 et 2, comportant un support (2), une plage de câblage (3), une plage de masse (4) et une couche résistive (5) présentant une résistance standard entre la plage de câblage (3) et la plage de masse (4). Le composant selon l'invention est caractérisé en ce qu'il comporte des éléments d'adaptation hyperfréquences inductifs et capacitifs complètement intégrés, extérieurs à la couche résistive (5) afin de réaliser une adaptation d'ordre multiple, en multipliant les éléments inductifs en série et les éléments capacitifs en parallèle.The present invention relates to a passive microwave component with resistive load (1) intended for power dissipation, illustrated in FIGS. 1 and 2, comprising a support (2), a wiring range (3), a mass range (4 ) and a resistive layer (5) having a standard resistance between the wiring range (3) and the mass range (4). The component according to the invention is characterized in that it includes completely inductive and capacitive microwave adaptation elements integrated, external to the resistive layer (5) in order to carry out a multiple order adaptation, by multiplying the inductive elements in series and the capacitive elements in parallel.
Le composant selon l'invention est également caractérisé en ce que lesdits éléments d'adaptation hyperfréquence présentent des dimensions géométriques adaptées à la dimension et à la puissance du composant.The component according to the invention is also characterized in that said microwave adaptation elements have geometric dimensions adapted to the dimension and the power of the component.
Une métallisation est réalisée sur la face inférieure (7) du composant (1). Elle constitue la connexion de masse et est dénommée pour cette raison « plan de masse ». La couche résistive (5) est déposée sur la surface supérieure (8) du composant (1), en contact avec les deux plages métalliques de câblage (3) et de masse (4).Metallization is carried out on the underside (7) of the component (1). It constitutes the ground connection and is therefore called "ground plan". The resistive layer (5) is deposited on the upper surface (8) of the component (1), in contact with the two metallic areas of wiring (3) and ground (4).
La plage de câblage (3) constitue la connexion d'entrée de la charge résistive et la plage de masse (4) permet la liaison avec le plan de masse (7) par l'intermédiaire de un ou de plusieurs trous (6) dont les parois sont métallisées, débouchant de part et d'autre des surfaces inférieure et supérieure.The wiring range (3) constitutes the input connection of the resistive load and the mass range (4) allows the connection with the ground plane (7) via one or more holes (6) including the walls are metallized, opening on either side of the lower and upper surfaces.
Les mêmes résultats peuvent être obtenus avec un flan de retour de masse métallisé, mais la méthode est économiquement moins intéressante.The same results can be obtained with a metallized mass return blank, but the method is economically less attractive.
La figure 5 montre un schéma équivalent simplifié de la charge résistive complète des figures 1 et 2.FIG. 5 shows a simplified equivalent diagram of the complete resistive load of FIGS. 1 and 2.
La couche résistive (5) est modélisée par la résistance R5 qui est l'élément principal de la charge, complétée par la capacité C5 ainsi que l'inductance L5 disposées entre la couche résistive (5) et le plan de masse (7).The resistive layer (5) is modeled by the resistance R5 which is the main element of the load, supplemented by the capacitance C5 as well as the inductance L5 arranged between the resistive layer (5) and the ground plane (7).
Aux fréquences élevées (domaine des hyperfréquences), ces deux derniers éléments font dévier l'impédance mesurée à la plage (3) de la valeur représentée par R5.At high frequencies (microwave domain), these last two elements deflect the impedance measured at range (3) from the value represented by R5.
Dans une certaine limite de fréquence supérieure, une compensation des défauts dits du premier ordre est effectuée en ajoutant une inductance supplémentaire L6 réalisée par exemple par le ou les trous métallisés. Cet ensemble constitue, selon l'état de l'art, un circuit d'adaptation d'ordre 2.In a certain upper frequency limit, compensation for so-called first order faults is carried out by adding an additional inductance L6 produced for example by the metallized hole or holes. This assembly constitutes, according to the state of the art, a second order adaptation circuit.
Dans une autre version de l'invention, illustrée figures 3 et 4, on retrouve les mêmes éléments que dans la version simple illustrée figures 1 et 2, mais les plages métallisées (3) et (4) sont réalisées selon un motif plus complexe.In another version of the invention, illustrated in FIGS. 3 and 4, we find the same elements as in the simple version illustrated in FIGS. 1 and 2, but the metallized areas (3) and (4) are produced in a more complex pattern.
Lesdits éléments d'adaptation hyperfréquences sont constitués : - d'un ou de plusieurs éléments inductifs pré-résistance (9) situés en série entre la plage de câblage (3) et la couche résistive (5), - d'un ou de plusieurs éléments capacitifs pré-résistance (10) situés en parallèle entre la plage de câblage (3) et la couche résistive (5), le phénomène capacitif étant créé entre la plage de câblage (3) et le plan de masse (7), etSaid microwave adaptation elements consist of: - one or more inductive pre-resistance elements (9) located in series between the wiring area (3) and the resistive layer (5), - one or more pre-resistance capacitive elements (10) located in parallel between the wiring area (3) and the resistive layer (5), the capacitive phenomenon being created between the wiring area (3) and the plane mass (7), and
- d'un ou de plusieurs éléments inductifs post-résistance (11) situés en série entre la couche résistive (5) et la plage de masse (4).- one or more post-resistance inductive elements (11) located in series between the resistive layer (5) and the mass range (4).
Ledit élément inductif pré-résistance (9) peut être, par exemple, constitué d'une ligne étroite (12).Said pre-resistance inductive element (9) can, for example, consist of a narrow line (12).
Ledit élément capacitif pré-résistance (10) peut être, par exemple, constitué d'une ligne large (13), et / ou d'un intervalle isolant (15). Lesdits éléments inductifs post-résistance (11) peuvent, par exemple, être constitués d'un ou de plusieurs trous (6) dont les parois sont métallisées et / ou d'une ligne étroite (14).Said pre-resistance capacitive element (10) can be, for example, constituted by a wide line (13), and / or by an insulating gap (15). Said post-resistance inductive elements (11) can, for example, consist of one or more holes (6) whose walls are metallized and / or of a narrow line (14).
Le composant (1) illustré à titre d'exemple figures 3 et 4 comporte un élément inductif pré-résistance (9), un élément capacitif pré-résistance (10) et deux éléments inductifs post-résistance (11) constitués par des trous (6) et une ligne étroite (14).The component (1) illustrated by way of example in FIGS. 3 and 4 comprises a pre-resistance inductive element (9), a pre-resistance capacitive element (10) and two post-resistance inductive elements (11) constituted by holes ( 6) and a narrow line (14).
Sur la figure 6 montrant le schéma équivalent simplifié de cette dernière version, la ligne étroite (12) forme une inductance en série L9, la ligne large (13) forme une capacité en parallèle C10 et la ligne étroite (14) constitue une inductance complémentaire L11.In FIG. 6 showing the simplified equivalent diagram of this last version, the narrow line (12) forms an inductance in series L9, the wide line (13) forms a capacitance in parallel C10 and the narrow line (14) constitutes a complementary inductance L11.
La figure 6 montre le rôle des éléments C10, L9, L11 et L6 comme compensateurs des éléments C5 et L5 contenus dans la couche résistive (5) en sus de l'élément principal R5.FIG. 6 shows the role of elements C10, L9, L11 and L6 as compensators for elements C5 and L5 contained in the resistive layer (5) in addition to the main element R5.
Dans une certaine limite de fréquence supérieure, l'ensemble ci-dessus constitue selon l'état de l'art, un circuit d'adaptation du quatrième ordre capable de compenser les défauts de l'impédance mesurée à la plage (3) jusqu'au troisième ordre.Within a certain upper frequency limit, the above assembly constitutes, according to the state of the art, a fourth order adaptation circuit capable of compensating for the faults of the impedance measured at range (3) up to third order.
On peut réaliser, grâce à l'invention, un niveau d'adaptation d'ordre multiple, ou d'ordre n, en multipliant les éléments inductifs (9) en série et les éléments capacitifs (10) en parallèle.It is possible, thanks to the invention, to achieve a level of adaptation of multiple order, or of order n, by multiplying the inductive elements (9) in series and the capacitive elements (10) in parallel.
Dans une version de l'invention, le support (2) est en oxyde d'aluminium.In one version of the invention, the support (2) is made of aluminum oxide.
Le composant selon l'invention permet de dissiper des énergies de 5 à 100 Watts, tout en gardant la même taille que les composants en oxyde de béryllium.The component according to the invention makes it possible to dissipate energies from 5 to 100 Watts, while keeping the same size as the beryllium oxide components.
Les fréquences d'utilisation peuvent atteindre 1 à 5 GHz ou plus selon la puissance à dissiper.The operating frequencies can reach 1 to 5 GHz or more depending on the power to be dissipated.
De plus, de par sa configuration, il est très facile à câbler. On constate sur la figure 7 que, pour une puissance de 30 Watts, le TOS obtenu grâce à un composant selon l'invention (courbe B), est bien meilleur que leIn addition, due to its configuration, it is very easy to wire. It can be seen in FIG. 7 that, for a power of 30 Watts, the TOS obtained thanks to a component according to the invention (curve B), is much better than the
TOS obtenu avec un composant classique (courbe A), pour des valeurs de fréquence de : - référence 1 : 1 GHz, référence 2 : 1 ,5 GHz, référence 3 : 2 GHz, référence 4 : 2,5 GHz, référence 5 : 3 GHz, - référence 6 : 3,5 GHz.TOS obtained with a conventional component (curve A), for frequency values of: - reference 1: 1 GHz, reference 2: 1, 5 GHz, reference 3: 2 GHz, reference 4: 2.5 GHz, reference 5: 3 GHz, - reference 6: 3.5 GHz.
Les figures 8 et 9 qui illustrent les diagrammes de Smith respectifs des courbes A et B montrent bien que, dans le cas d'un composant classique, l'impédance est uniquement capacitive alors que dans le cas d'un composant selon l'invention, l'impédance est alternativement inductive puis capacitive, puis inductive. Dans une autre version, le support (2) est en nitrure d'aluminium. Le composant selon l'invention ainsi réalisé permet d'atteindre des performances de puissance dissipée supérieure (à fréquence spécifiée) ou des fréquences de fonctionnement supérieure (à puissance dissipée donnée) à celles des composants en oxyde de Béryllium. Dans cette version, le retour de masse se fait préférentiellement par tranche métallisée. FIGS. 8 and 9 which illustrate the respective Smith diagrams of curves A and B clearly show that, in the case of a conventional component, the impedance is only capacitive whereas in the case of a component according to the invention, the impedance is alternately inductive then capacitive, then inductive. In another version, the support (2) is made of aluminum nitride. The component according to the invention thus produced makes it possible to achieve higher dissipated power performances (at specified frequency) or higher operating frequencies (at given dissipated power) than those of the beryllium oxide components. In this version, the mass return is preferably done by metallized edge.

Claims

REVENDICATIONS
1. Composant passif hyperfréquence à charge résistive (1 ) destiné à la dissipation de puissance, comportant un support (2), une plage de câblage (3), une plage de masse (4) et une couche résistive (5) présentant une résistance standard entre la plage de câblage (3) et la plage de masse (4), caractérisé en ce qu'il comporte des éléments d'adaptation hyperfréquences capacitifs et inductifs complètement intégrés, extérieurs à la couche résistive (5), afin de réaliser une adaptation d'ordre multiple, en multipliant les éléments inductifs en série et les éléments capacitifs en parallèle.1. Passive microwave component with resistive load (1) intended for power dissipation, comprising a support (2), a wiring range (3), a mass range (4) and a resistive layer (5) having a resistance standard between the wiring range (3) and the mass range (4), characterized in that it includes completely integrated capacitive and inductive microwave adaptation elements, external to the resistive layer (5), in order to achieve a multiple order adaptation, by multiplying the inductive elements in series and the capacitive elements in parallel.
2. Composant passif hyperfréquence à charge résistive (1 ) selon la revendication 1 , caractérisé en ce que lesdits éléments d'adaptation hyperfréquences présentent des dimensions géométriques adaptées à la dimension et à la puissance du composant.2. Passive microwave component with resistive load (1) according to claim 1, characterized in that said microwave adaptation elements have geometric dimensions adapted to the dimension and the power of the component.
3. Composant passif hyperfréquence à charge résistive (1) selon l'une quelconque des revendications 1 ou 2, caractérisé en ce que lesdits éléments d'adaptation hyperfréquences sont constitués : - d'un ou de plusieurs éléments inductifs pré-résistance (9) situés en série entre la plage de câblage (3) et la couche résistive (5) et,3. Passive microwave component with resistive load (1) according to any one of claims 1 or 2, characterized in that said microwave adaptation elements consist of: - one or more inductive pre-resistance elements (9) located in series between the wiring area (3) and the resistive layer (5) and,
- d'un ou de plusieurs éléments capacitifs pré-résistance (10) situés en parallèle entre la plage de câblage (3) et la couche résistive (5) et,- one or more pre-resistance capacitive elements (10) located in parallel between the wiring area (3) and the resistive layer (5) and,
- d'un ou de plusieurs éléments inductifs post-résistance (11) situés en série entre la couche résistive (5) et la plage de masse (4).- one or more post-resistance inductive elements (11) located in series between the resistive layer (5) and the mass range (4).
4. Composant actif hyperfréquence à charge résistive (1) selon la revendication 3, caractérisé en ce que ledit élément inductif pré-résistance (9) est constitué d'une ligne étroite (12).4. Active microwave component with resistive load (1) according to claim 3, characterized in that said pre-resistance inductive element (9) consists of a narrow line (12).
5. Composant passif hyperfréquence à charge résistive (1) selon la revendication 3, caractérisé en ce que ledit élément capacitif pré-résistance (10) est constitué d'une ligne large (13).5. Passive microwave component with resistive load (1) according to claim 3, characterized in that said pre-resistance capacitive element (10) consists of a wide line (13).
6. Composant passif hyperfréquence à charge résistive (1) selon la revendication 3, caractérisé en ce que lesdits éléments inductifs post-résistance (1 1) sont constitués d'un ou de plusieurs trous (6) traversant le support (2) dont les parois sont métallisées Composant passif hyperfréquence à charge résistive (1) selon la revendication6. Passive microwave component with resistive load (1) according to claim 3, characterized in that said post-resistance inductive elements (1 1) consist of one or more holes (6) passing through the support (2) whose walls are metallized Resistive load microwave passive component (1) according to claim
3, caractérisé en ce que ledit élément inductif post-résistance (11) est constitué d'une ligne étroite (14). 3, characterized in that said post-resistance inductive element (11) consists of a narrow line (14).
PCT/FR1999/001362 1998-06-09 1999-06-09 Resistive-load hyperfrequency passive component WO1999065104A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU41481/99A AU4148199A (en) 1998-06-09 1999-06-09 Resistive-load hyperfrequency passive component
EP99925061A EP1086507B1 (en) 1998-06-09 1999-06-09 Resistive-load hyperfrequency passive component
DE69910383T DE69910383D1 (en) 1998-06-09 1999-06-09 PASSIVE MICROWAVE COMPONENT WITH RESISTANCE LOAD

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR98/07468 1998-06-09
FR9807468A FR2779577B1 (en) 1998-06-09 1998-06-09 PASSIVE MICROWAVE COMPONENT WITH RESISTIVE LOAD HAVING INTEGRATED MICROWAVE ADJUSTMENT ELEMENTS

Publications (1)

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WO1999065104A1 true WO1999065104A1 (en) 1999-12-16

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EP (1) EP1086507B1 (en)
AU (1) AU4148199A (en)
DE (1) DE69910383D1 (en)
FR (1) FR2779577B1 (en)
WO (1) WO1999065104A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2096858A1 (en) * 1970-07-07 1972-03-03 Thomson Csf
EP0044758A1 (en) * 1980-07-11 1982-01-27 Thomson-Csf Terminating arrangement for a microwave transmission line with minimal V.S.W.R.
EP0092137A1 (en) * 1982-04-16 1983-10-26 LES CABLES DE LYON Société anonyme dite: Distributed resistances for high-power loads in the microwave range
SU1550590A1 (en) * 1988-04-11 1990-03-15 Предприятие П/Я А-1586 Microstrip load
DE3843600C1 (en) * 1988-12-23 1990-03-22 Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De High-frequency power terminating impedance
JPH07221509A (en) * 1994-02-01 1995-08-18 Hitachi Ltd Microwave band terminator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2096858A1 (en) * 1970-07-07 1972-03-03 Thomson Csf
EP0044758A1 (en) * 1980-07-11 1982-01-27 Thomson-Csf Terminating arrangement for a microwave transmission line with minimal V.S.W.R.
EP0092137A1 (en) * 1982-04-16 1983-10-26 LES CABLES DE LYON Société anonyme dite: Distributed resistances for high-power loads in the microwave range
SU1550590A1 (en) * 1988-04-11 1990-03-15 Предприятие П/Я А-1586 Microstrip load
DE3843600C1 (en) * 1988-12-23 1990-03-22 Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De High-frequency power terminating impedance
JPH07221509A (en) * 1994-02-01 1995-08-18 Hitachi Ltd Microwave band terminator

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 95, no. 11 26 December 1995 (1995-12-26) *
SOVIET PATENTS ABSTRACTS Section EI Week 9040, 14 November 1990 Derwent World Patents Index; Class W02, AN 9030397640, XP002093885 *

Also Published As

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EP1086507A1 (en) 2001-03-28
DE69910383D1 (en) 2003-09-18
AU4148199A (en) 1999-12-30
EP1086507B1 (en) 2003-08-13
FR2779577A1 (en) 1999-12-10
FR2779577B1 (en) 2001-01-05

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