WO1999062106A3 - Procede de production d'une surface structuree - Google Patents

Procede de production d'une surface structuree Download PDF

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Publication number
WO1999062106A3
WO1999062106A3 PCT/GB1999/001606 GB9901606W WO9962106A3 WO 1999062106 A3 WO1999062106 A3 WO 1999062106A3 GB 9901606 W GB9901606 W GB 9901606W WO 9962106 A3 WO9962106 A3 WO 9962106A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
structured surface
peaks
silicon
substrate
Prior art date
Application number
PCT/GB1999/001606
Other languages
English (en)
Other versions
WO1999062106A2 (fr
Inventor
Richard Edward Palmer
Katrin Seeger
Original Assignee
Univ Birmingham
Richard Edward Palmer
Katrin Seeger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9810950.7A external-priority patent/GB9810950D0/en
Priority claimed from GBGB9813267.3A external-priority patent/GB9813267D0/en
Priority claimed from GBGB9905230.0A external-priority patent/GB9905230D0/en
Application filed by Univ Birmingham, Richard Edward Palmer, Katrin Seeger filed Critical Univ Birmingham
Priority to JP2000551425A priority Critical patent/JP2002517087A/ja
Priority to EP99922377A priority patent/EP1088341A2/fr
Publication of WO1999062106A2 publication Critical patent/WO1999062106A2/fr
Publication of WO1999062106A3 publication Critical patent/WO1999062106A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Selon l'invention on dépose en grappes un matériau à graver, tel que de l'argent, sur un substrat de silicium (10) afin de former des crêtes (12). Puis on grave au moins partiellement ces crêtes (12), au moyen d'une gravure au plasma, afin de former des cônes (14) ou des piliers de silicium sur le substrat (10).
PCT/GB1999/001606 1998-05-22 1999-05-20 Procede de production d'une surface structuree WO1999062106A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000551425A JP2002517087A (ja) 1998-05-22 1999-05-20 表面構造体の製造方法
EP99922377A EP1088341A2 (fr) 1998-05-22 1999-05-20 Procede de production d'une surface structuree

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GBGB9810950.7A GB9810950D0 (en) 1998-05-22 1998-05-22 Method of producing a structured surface
GB9810950.7 1998-05-22
GBGB9813267.3A GB9813267D0 (en) 1998-06-20 1998-06-20 Method of producing a structured surface
GB9813267.3 1998-06-20
GB9905230.0 1999-03-09
GBGB9905230.0A GB9905230D0 (en) 1999-03-09 1999-03-09 Method of producing a structural surface

Publications (2)

Publication Number Publication Date
WO1999062106A2 WO1999062106A2 (fr) 1999-12-02
WO1999062106A3 true WO1999062106A3 (fr) 2000-03-02

Family

ID=27269325

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1999/001606 WO1999062106A2 (fr) 1998-05-22 1999-05-20 Procede de production d'une surface structuree

Country Status (3)

Country Link
EP (1) EP1088341A2 (fr)
JP (1) JP2002517087A (fr)
WO (1) WO1999062106A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607415B2 (en) 2001-06-12 2003-08-19 Hewlett-Packard Development Company, L.P. Method for fabricating tiny field emitter tips
US6648710B2 (en) 2001-06-12 2003-11-18 Hewlett-Packard Development Company, L.P. Method for low-temperature sharpening of silicon-based field emitter tips
US20070051942A1 (en) * 2003-09-24 2007-03-08 Nanocluster Devices Limited Etch masks based on template-assembled nanoclusters

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994025976A1 (fr) * 1993-04-23 1994-11-10 Microelectronics And Computer Technology Corporation Procede de production de pointes d'emission de champ par depot en phase vapeur par procede physique de noyaux aleatoires utilises comme masque de gravure
US5607335A (en) * 1994-06-29 1997-03-04 Silicon Video Corporation Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
US5676853A (en) * 1996-05-21 1997-10-14 Micron Display Technology, Inc. Mask for forming features on a semiconductor substrate and a method for forming the mask
WO1999003123A1 (fr) * 1997-07-07 1999-01-21 Candescent Technologies Corporation Formation d'electrode de commande

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994025976A1 (fr) * 1993-04-23 1994-11-10 Microelectronics And Computer Technology Corporation Procede de production de pointes d'emission de champ par depot en phase vapeur par procede physique de noyaux aleatoires utilises comme masque de gravure
US5607335A (en) * 1994-06-29 1997-03-04 Silicon Video Corporation Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
US5676853A (en) * 1996-05-21 1997-10-14 Micron Display Technology, Inc. Mask for forming features on a semiconductor substrate and a method for forming the mask
WO1999003123A1 (fr) * 1997-07-07 1999-01-21 Candescent Technologies Corporation Formation d'electrode de commande

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
TADA T ET AL: "Fabrication of 10-nm Si pillars with self-formed etching masks", MICROELECTRONIC ENGINEERING, vol. 35, no. 1, 1 February 1997 (1997-02-01), pages 293-296, XP004054062, ISSN: 0167-9317 *
TADA T ET AL: "Fabrication of size-controlled 10-nm scale Si pillars using metal clusters as formation nuclei", MICROELECTRONIC ENGINEERING, vol. 41-42, 1 March 1998 (1998-03-01), pages 539-542, XP004111776, ISSN: 0167-9317 *
TADA T ET AL: "FORMATION OF 10 NM SI STRUCTURES USING SIZE-SELECTED METAL CLUSTERS", JOURNAL OF PHYSICS D. APPLIED PHYSICS, vol. 31, no. 7, 7 April 1998 (1998-04-07), pages L21 - L24, XP000780542, ISSN: 0022-3727 *

Also Published As

Publication number Publication date
JP2002517087A (ja) 2002-06-11
EP1088341A2 (fr) 2001-04-04
WO1999062106A2 (fr) 1999-12-02

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