WO1999036948A1 - Microstructures de grande superficie et dispositifs micromecaniques integres - Google Patents

Microstructures de grande superficie et dispositifs micromecaniques integres Download PDF

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Publication number
WO1999036948A1
WO1999036948A1 PCT/US1999/000783 US9900783W WO9936948A1 WO 1999036948 A1 WO1999036948 A1 WO 1999036948A1 US 9900783 W US9900783 W US 9900783W WO 9936948 A1 WO9936948 A1 WO 9936948A1
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WO
WIPO (PCT)
Prior art keywords
wafer
platform
pattern
large area
etching
Prior art date
Application number
PCT/US1999/000783
Other languages
English (en)
Inventor
Timothy J. Davis
Scott G. Adams
Original Assignee
Kionix, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kionix, Inc. filed Critical Kionix, Inc.
Priority to JP2000540567A priority Critical patent/JP2002509808A/ja
Priority to EP99905434A priority patent/EP1062685A1/fr
Publication of WO1999036948A1 publication Critical patent/WO1999036948A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00484—Processes for releasing structures not provided for in group B81C1/00476
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0136—Comb structures

Definitions

  • the field of the present invention relates generally to microdevices and microstructures, and more particularly to a microfabrication process which enables the
  • micron-scale micromechanical flexures supported by, micron-scale micromechanical flexures, actuators and/or transducers.
  • MEMS microelectromechanical systems
  • MEMS devices microscopic dimensions utilizing techniques similar to those well known in the manufacture of integrated circuits.
  • micromechanical devices Such devices will be referred to herein as MEMS devices or micromechanical devices for convenience, although it will be understood
  • microelectromechanical transducers such as pressure sensors, inertial measurement devices, electrostatic actuators, and the like, as well as a wide variety of nanometer-
  • Microaccelerometers are available as commercial products, and most of these devices
  • This application requires an accelerometer sensitive to accelerations in the range of
  • microaccelerometers offer size, cost and performance advantages over prior technologies, such as piezoelectric devices, for inertial sensing. There is,
  • microstages is a process for fabricating a large area structure having dimensions up to several millimeters, releasing that structure for motion, and integrating that structure with other micromechanical and microelectromechanical devices which may have dimensions in the range of 1-3 ⁇ m. It is further desirable that all of the structures be fabricated from a single crystal silicon substrate material. Moreover, substantially the same fabrication process should be utilized for the creation of the large area structure and other micromechanical and microelectromechanical devices, although it should be understood that there may be circumstances under which it is more effective or
  • the present invention is directed to a
  • microelectromechanical sensors and/or actuators are examples of microelectromechanical sensors and/or actuators.
  • a further aspect of the invention is a fabrication technique which permits the
  • the conventional micromechanical devices may be flexible supports, may be motion transducers (capacitive or otherwise) and/or electrostatic actuators, and may
  • Another aspect of the invention is the provision of micron-scale, flexible silicon beam support members, or flexures, capable of supporting a large, millimeter-
  • structures are utilized in the present invention to support the structure and to provide a requisite mechanical stiffness to prevent out of plane motion, while permitting controlled in-plane motion of the structure.
  • a still further aspect of the invention is the use of silicon beam flexures such as
  • a further aspect of the invention is the use of substantially the same plasma
  • micromachining technique involving lithography, deposition, and reactive ion
  • the back-side processing could be
  • Another aspect of the invention is the integration of large area millimeter-scale movable structures, micromechanical devices, and conventional microelectronic circuits on a common wafer, or substrate.
  • process can be carried out on a substrate containing previously fabricated microelectronic devices.
  • a still further aspect of the invention is the provision of a large, relatively high
  • mass element for use in an inertial sensor, or accelerometer, through the release of a
  • large area solid block having substantially the full thickness of the substrate, the block being supported for relative motion in the substrate and being integral with
  • micromechanical motion transducer elements fabricated from the substrate and
  • Still another aspect of the invention is the creation of a large, flat-surfaced
  • the suspended structure being capable of moving in one or two directions in the
  • microstage can be utilized in a data storage application by providing a mechanism for placing data on the surface, such as by formation of
  • topological features and a mechanism for sensing such data, such as by scanned probe
  • high mass movable structure can be fabricated on a wafer by combining deep reactive ion etch processes based on SF 6 gas chemistries, which create single mask MEMS structures 20-50 ⁇ m deep within a wafer or other substrate, with a process for etching
  • the large area structure is
  • MEMS structures such as cantilevered beams or springs
  • the structures of the present invention preferably are fabricated from a silicon wafer or similar substrate which typically is 300-400 ⁇ m thick.
  • MEMS support structure is formed by a standard photolithography process on the top
  • the pattern is then etched into the wafer by a silicon etch
  • top surface etch depth is approximately 20-
  • a second photolithography step forms a pattern for the large area structure on
  • the bottom pattern defines the location of a bottom surface trench which will surround the large area structure to release it from the wafer, but which does not include the pattern of the top surface MEMS structure. This bottom surface trench is etched into the bottom
  • the cantilever beam array suspends the large area structure in a cavity formed within
  • a metal layer may be applied, as by sputter coating, to coat the top
  • capacitors may serve as capacitors for actuating the device, for sensing its motion, and /or for
  • the foregoing is a basic process for fabricating a MEMS - supported large area structure. More complex processes are needed to achieve higher performance. For example, a four masking level process can be used to allow the silicon beams
  • a patterned metal interconnect itself to act as capacitor electrodes.
  • a patterned metal interconnect itself to act as capacitor electrodes.
  • the large area portion of the wafer releasable by the above-described process can also be fabricated to have a reduced thickness in order to reduce its mass from the maximum provided by the full wafer thickness. Such a reduction in mass produces a
  • the reduced thickness structure can also be used as a data substrate for high density storage devices, for the large released area
  • support structure can be used to scan the platform back and forth beneath a writing or
  • the large area structure can also be used as a optical deflector, with the
  • MEMS actuators being used to move the reflective deflector surface.
  • Fig. 1 is a photomicrograph of a MEMS microstructure incorporating a large-
  • Fig.2 is an enlarged view of a portion of the microstructure of Fig. 1 ;
  • FIG. 3 through 8 illustrate the process steps of the present invention
  • Fig. 9 is a top plan view of the structure illustrated in the process steps of Figs.
  • Fig. 10 is a photomicrograph of a second MEMS microstructure fabricated by
  • Fig. 11 is an enlarged view of a portion of the microstructure of Fig. 10;
  • Fig. 12 is an enlarged view of a portion of Fig. 11 ;
  • Fig. 13 is a block diagram of a system in which a large area microstructure
  • FIG. 1 is a photomicrograph from a scanning electron microscope of a typical MEMS device 8 fabricated in accordance with the present invention.
  • the device 8 incorporates a
  • Fig. 2 is an enlargement of a portion of the device of Fig. 1.
  • the microstructure 10 is fabricated from the wafer material, using the etching process of the invention to be described below, and is a solid block of silicon which is cut out of
  • block 10 is generally rectangular, although any arbitrary
  • the shape can be fabricated with the process of the invention.
  • the block has a thickness
  • a block is supported within a cavity 14, which extends from the top surface through the thickness of the substrate, by suitable flexible support structures such as folded
  • each spring is connected at a first end 26
  • microstructure block 10 Each spring is formed by parallel pairs of legs connected to
  • SCREAM- 1 process produces spring structures in the form of silicon beams having high aspect ratios; that is, beams having a width of about 1-3
  • micrometers and a depth of about 10-30 micrometers, or more.
  • the high aspect ratio of these beams tends to restrict the motion of the microstructure block 12 to its own plane, since the spring structures have little flexibility in the direction perpendicular to
  • the block 10 has a large surface area, but is
  • a plurality of actuators 40 are provided along the two opposed
  • capacitive actuators which, as illustrated in greater detail in Fig. 2, include a first set of fixed plates 44 mounted on the substrate 12 and a moveable set of parallel plates 45
  • the capacitive plates 44 and 45 are parallel with the x-
  • the actuators cooperate with the support
  • capacitor plates may also act as sensors responsive to motion of the microstructure
  • block 10 in response to applied forces such as acceleration along the x-axis, with changes in capacitance due to any motion of block 10 being detectable by suitable electrical circuitry (not shown) connected to the capacitors by way of metal
  • conductors 50 are connected to the stationary capacitor plates and to suitable sensor and control circuitry which may be located on the substrate 12.
  • microstructure block 10 The microstructure block 10, the supporting springs 16, 18, 20 and 22, and the
  • actuators 40 are preferably fabricated from a substrate such as a single crystal silicon
  • the wafer having a polished, flat top surface having a polished, flat top surface.
  • the block is formed by an etching process
  • bits having dimensions of less than 100 nm as generally indicated at 54 in Fig. 2.
  • the flat surface of the block can also serve as an optical reflector or deflector or
  • the block 10 is
  • FIG. 10 illustrated in Figs. 1 and 2 provides a data surface on the order of 2 by 3mm and
  • Figs. 3-8 The process of fabricating the structures such as that illustrated in Figs. 1 and 2 is illustrated in Figs. 3-8, to which reference is now made. As illustrated Figs. 3, a
  • double-sided, polished silicon substrate 12 having a top surface 60 and a bottom
  • the substrate will be a wafer that is 300-400
  • a silicon dioxide layer 64 is grown or deposited on the top surface 60.
  • the oxide 64 is typically thermally grown in an 1100 degree Centigrade furnace to a thickness of
  • This pattern is formed in a photoresist layer 66 as illustrated at 68.
  • oxide etching procedure uses CHF 3 or CF 4 in a high density etch chamber such as an
  • ICP inductively coupled plasma
  • the trenches surround unetched silicon islands, or mesas, such as
  • the mesas 71, 72 and 73 and define the side walls of a cavity surrounding the MEMS
  • the silicon etch may use a process such as that developed by Robert Bosch
  • SF 6 is typically flowed with Argon in a high density etcher chamber, such
  • the etch depth for this step is approximately 20-50 micrometers, with mesa widths typically being as small as 1-3 micrometers and
  • the large area block as large as desired for the large area block to be formed, for example from mesa 73.
  • This layer is designed to protect the mesas sidewalls during excessive etch
  • This sidewall layer is typically
  • deposited and is usually less than 300nm thick. If desired, a thick (greater than 10
  • a layer of a photoresist material may be spun onto the top surface of the
  • next step in the fabrication process is a further step in the fabrication process.
  • the large area block or platform 10 which is to be formed from the substrate and suspended in a cavity in the substrate by the flexible support structures previously defined on the top surface.
  • the bottom surface 62 is covered by an oxide
  • a layer may be deposited through chemical vapor deposition techniques, and a photolithography process is performed using a thick (greater than 5 micrometers) photoresist layer 80 on the oxide layer 78.
  • the photoresist is exposed using a double-side mask aligner so
  • the photolithography step defines a
  • resulting block of silicon has the same thickness as the wafer.
  • the bottom surface trench can be widened to define an area of
  • the photolithography pattern created in the photoresist layer is transferred to the
  • bottom surface oxide layer 78 using a standard oxide etching process.
  • a bottom surface etch is then performed through the
  • the Bosch silicon etch technique described above, to carve out a bottom surface trench 84 which extends around the periphery of the region 86 of the wafer which is to become the large area block or platform. As illustrated, the bottom surface of the region 86 is protected from the etch by the portion 87 of the patterned oxide layer 78 when the full thickness of the region 86 is to be maintained.
  • etching of trench 84 is stopped short of the floor 76 of the trenches 70 formed in the top-surface etching so as to prevent the region 86 from being freed from the substrate during this step. Normally, this is done by timing the bottom surface etch to insure
  • the floor 88 of trench 84 stops 10-30 micrometers away from the floor 76. If the substrate 12 is 400 micrometers thick, and if the trenches 70 are etched to a depth of 30 micrometers, the target etch depth for the trench 84 would be approximately 350
  • the device is completed, as illustrated in Fig. 7, by finishing the top surface
  • photoresist layer is removed using a wet (chemical) or
  • top trench 70 which surround the periphery of region 86 and which are aligned with the bottom trench 84 with the bottom trench to produce a
  • undercutting step may also serve to remove any remaining thin layer of silicon
  • the final released device is thus comprised of a
  • a metal layer 110 may be sputtered onto the exposed surfaces of the substrate, the large area mass 86 and the flexible support arm array 110, as illustrated in Fig. 8,
  • the metal coats the tops and sidewalls of the structure as well as a
  • the etching step of Fig 6 would enlarge the trench 84 to extend completely
  • the surface 88 illustrated in Fig. 6 would form the bottom surface of the block as illustrated by the dotted line 114, and the thickness of the block
  • interconnect on top of an oxide layer on the silicon beams can be provided. This would allow the beams themselves to be used as capacitor electrodes by electrically
  • thin beams such as the flexible connector array 106 illustrated in Fig. 8. Since the large area device can have dimensions in the millimeter scale rather than the micrometer scale, it can have a high mass which may be used, in one
  • this structure can provide an accelerometer having sub-milli-g resolutions.
  • Fig. 10 is a top perspective view of a high mass accelerometer 120 mounted in
  • the accelerometer includes a high mass
  • block 122 having the full thickness of the wafer and in the illustrated embodiment having top surface dimensions of approximately 5 millimeters by 6 millimeters.
  • block 122 contains approximately 28 milligrams silicon, a factor of 1000 increase in
  • the block 122 is
  • beam support structure 126 formed on substrate 12 and extending partially over the
  • flexible arm 132 extends from the fixed support 126 to the block 122 and supports the
  • the specific shape of the support springs is a matter of design.
  • the block 122 is supported by a plurality of spaced
  • variable capacitor beam and spring flexure assemblies 144 consist of a central backbone 148
  • variable capacitors include moveable arms integral with the beam 148 and stationary arms integral with
  • the springs 124, 150 and 152 tend to hold the block 122 in a stable position within the substrate, with the block being surrounded by trench 130 which extends through the substrate in the manner illustrated with respect to trench 96 in
  • Fig. 8 The capacitors are connected to external circuitry by way of surface
  • connectors 160 and 162 to sense even slight relative motion of the moveable and stationary capacitive plates in response to longitudinal forces applied to block 122 in a
  • a stop 164 may be provided adjacent to the block
  • connection of a microstructure device to an external electronic circuit is
  • a microstructure 180 includes a large area portion 182 which is
  • microelectromechanical capacitors 182 and 184 are connected to microelectromechanical capacitors 182 and 184, as discussed above.
  • the capacitors are electrically connected to an electronic circuit 188, which can be in
  • connectors may be wires, printed circuit leads, package leadframes, wire bonds, or
  • circuit 188 is typically composed of charge amplifiers and other components to sense
  • the circuit 188 is preferably composed of drive amplifiers and other components which apply selected actuating voltages to the capacitors to produce forces between the capacitor plates which result in controlled motion of the mass. In either instance
  • interface 194 which may be, for example, another circuit or a programmable

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La gravure en profondeur par ions réactifs crée une structure MEMS (MicroElectroMechanical System) d'une profondeur de 20-50 micromètres sur la surface supérieure d'une tranche. Ensuite, un gravage de la surface inférieure vient coopérer avec les tranchées formées dans la structure MEMS et constituer des transchées traversantes dégageant des structures (86) de grande superficie, de forme arbitraire, et d'une épaisseur pouvant atteindre celle de la tranche. La structure ainsi formée repose dans la tranche sur des barrettes-supports MEMS (102, 104). Les mouvements sont détectés et commandés respectivement par des capteurs et des actionneurs MEMS.
PCT/US1999/000783 1998-01-15 1999-01-14 Microstructures de grande superficie et dispositifs micromecaniques integres WO1999036948A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000540567A JP2002509808A (ja) 1998-01-15 1999-01-14 集積大面積ミクロ構造体およびミクロメカニカルデバイス
EP99905434A EP1062685A1 (fr) 1998-01-15 1999-01-14 Microstructures de grande superficie et dispositifs micromecaniques integres

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7156998P 1998-01-15 1998-01-15
US60/071,569 1998-01-15

Publications (1)

Publication Number Publication Date
WO1999036948A1 true WO1999036948A1 (fr) 1999-07-22

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JP (1) JP2002509808A (fr)
WO (1) WO1999036948A1 (fr)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229640B1 (en) 1999-08-11 2001-05-08 Adc Telecommunications, Inc. Microelectromechanical optical switch and method of manufacture thereof
WO2001057902A2 (fr) * 2000-02-03 2001-08-09 Calient Networks, Inc. Excitateur electrostatique pour systemes microelectromecaniques, et procedes de fabrication correspondants
US6316282B1 (en) 1999-08-11 2001-11-13 Adc Telecommunications, Inc. Method of etching a wafer layer using multiple layers of the same photoresistant material
WO2002090244A2 (fr) * 2001-05-07 2002-11-14 Applied Materials, Inc. Dispositifs a microstructure, procedes d'elaboration d'un dispositif correspondant et procede d'elaboration d'un dispositif de microsysteme electromecanique (mems)
WO2002052561A3 (fr) * 2000-12-22 2002-11-28 Ic Mechanics Inc Utilisation d'actionneurs a transfert d'inertie pour commander les mouvements de structures mecaniques flexibles
US6585383B2 (en) 2000-05-18 2003-07-01 Calient Networks, Inc. Micromachined apparatus for improved reflection of light
US6628041B2 (en) 2000-05-16 2003-09-30 Calient Networks, Inc. Micro-electro-mechanical-system (MEMS) mirror device having large angle out of plane motion using shaped combed finger actuators and method for fabricating the same
US6768331B2 (en) * 2002-04-16 2004-07-27 Teradyne, Inc. Wafer-level contactor
US6801682B2 (en) 2001-05-18 2004-10-05 Adc Telecommunications, Inc. Latching apparatus for a MEMS optical switch
US6893577B2 (en) * 2002-04-30 2005-05-17 Hewlett-Packard Development Company, L.P. Method of forming substrate for fluid ejection device
WO2006060937A1 (fr) * 2004-12-10 2006-06-15 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences Dispositif mems comportant une partie deplaçable lateralement comprenant sur les parois laterales de la rainure des capteurs piezo resistants et des elements electrostatiques d'activation, et leurs procedes de production
US7102480B2 (en) 2001-04-17 2006-09-05 Telefonaktiebolaget Lm Ericsson (Publ) Printed circuit board integrated switch
JP2008300870A (ja) * 2008-08-18 2008-12-11 Oki Data Corp 半導体装置の製造方法、および半導体製造装置
US7728339B1 (en) 2002-05-03 2010-06-01 Calient Networks, Inc. Boundary isolation for microelectromechanical devices
US9764942B2 (en) 2015-05-15 2017-09-19 Murata Manufacturing Co., Ltd. Multi-level micromechanical structure
US9969615B2 (en) 2015-05-15 2018-05-15 Murata Manufacturing Co., Ltd. Manufacturing method of a multi-level micromechanical structure on a single layer of homogenous material
US12103843B2 (en) 2021-01-20 2024-10-01 Calient.Ai Inc. MEMS mirror arrays with reduced crosstalk

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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JP4544140B2 (ja) * 2005-02-16 2010-09-15 セイコーエプソン株式会社 Ｍｅｍｓ素子
US7481943B2 (en) * 2005-08-08 2009-01-27 Silverbrook Research Pty Ltd Method suitable for etching hydrophillic trenches in a substrate
JP2007294612A (ja) * 2006-04-24 2007-11-08 Oki Data Corp 半導体装置、半導体装置の製造方法、半導体製造装置、ｌｅｄヘッド、および画像形成装置
WO2009080615A2 (fr) * 2007-12-21 2009-07-02 Solvay Fluor Gmbh Procédé pour la production de systèmes microélectromécaniques

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US5637189A (en) * 1996-06-25 1997-06-10 Xerox Corporation Dry etch process control using electrically biased stop junctions
US5645684A (en) * 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures

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US5610335A (en) * 1993-05-26 1997-03-11 Cornell Research Foundation Microelectromechanical lateral accelerometer
US5645684A (en) * 1994-03-07 1997-07-08 The Regents Of The University Of California Multilayer high vertical aspect ratio thin film structures
US5637189A (en) * 1996-06-25 1997-06-10 Xerox Corporation Dry etch process control using electrically biased stop junctions

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316282B1 (en) 1999-08-11 2001-11-13 Adc Telecommunications, Inc. Method of etching a wafer layer using multiple layers of the same photoresistant material
US6469361B2 (en) 1999-08-11 2002-10-22 Adc Telecommunications, Inc. Semiconductor wafer
US6229640B1 (en) 1999-08-11 2001-05-08 Adc Telecommunications, Inc. Microelectromechanical optical switch and method of manufacture thereof
US6682871B2 (en) 1999-08-11 2004-01-27 Adc Telecommunications, Inc. Microelectromechanical optical switch and method of manufacture thereof
WO2001057902A2 (fr) * 2000-02-03 2001-08-09 Calient Networks, Inc. Excitateur electrostatique pour systemes microelectromecaniques, et procedes de fabrication correspondants
WO2001057902A3 (fr) * 2000-02-03 2002-03-14 Calient Networks Inc Excitateur electrostatique pour systemes microelectromecaniques, et procedes de fabrication correspondants
US7261826B2 (en) * 2000-02-03 2007-08-28 Calient Networks, Inc. Electrostatic actuator for microelectromechanical systems and methods of fabrication
US6628041B2 (en) 2000-05-16 2003-09-30 Calient Networks, Inc. Micro-electro-mechanical-system (MEMS) mirror device having large angle out of plane motion using shaped combed finger actuators and method for fabricating the same
US6585383B2 (en) 2000-05-18 2003-07-01 Calient Networks, Inc. Micromachined apparatus for improved reflection of light
WO2002052561A3 (fr) * 2000-12-22 2002-11-28 Ic Mechanics Inc Utilisation d'actionneurs a transfert d'inertie pour commander les mouvements de structures mecaniques flexibles
US7102480B2 (en) 2001-04-17 2006-09-05 Telefonaktiebolaget Lm Ericsson (Publ) Printed circuit board integrated switch
WO2002090244A2 (fr) * 2001-05-07 2002-11-14 Applied Materials, Inc. Dispositifs a microstructure, procedes d'elaboration d'un dispositif correspondant et procede d'elaboration d'un dispositif de microsysteme electromecanique (mems)
US6887732B2 (en) 2001-05-07 2005-05-03 Applied Materials, Inc. Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device
WO2002090244A3 (fr) * 2001-05-07 2003-11-13 Applied Materials Inc Dispositifs a microstructure, procedes d'elaboration d'un dispositif correspondant et procede d'elaboration d'un dispositif de microsysteme electromecanique (mems)
US6801682B2 (en) 2001-05-18 2004-10-05 Adc Telecommunications, Inc. Latching apparatus for a MEMS optical switch
US6768331B2 (en) * 2002-04-16 2004-07-27 Teradyne, Inc. Wafer-level contactor
US6893577B2 (en) * 2002-04-30 2005-05-17 Hewlett-Packard Development Company, L.P. Method of forming substrate for fluid ejection device
US7728339B1 (en) 2002-05-03 2010-06-01 Calient Networks, Inc. Boundary isolation for microelectromechanical devices
WO2006060937A1 (fr) * 2004-12-10 2006-06-15 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences Dispositif mems comportant une partie deplaçable lateralement comprenant sur les parois laterales de la rainure des capteurs piezo resistants et des elements electrostatiques d'activation, et leurs procedes de production
JP2008300870A (ja) * 2008-08-18 2008-12-11 Oki Data Corp 半導体装置の製造方法、および半導体製造装置
US9764942B2 (en) 2015-05-15 2017-09-19 Murata Manufacturing Co., Ltd. Multi-level micromechanical structure
US9969615B2 (en) 2015-05-15 2018-05-15 Murata Manufacturing Co., Ltd. Manufacturing method of a multi-level micromechanical structure on a single layer of homogenous material
US12103843B2 (en) 2021-01-20 2024-10-01 Calient.Ai Inc. MEMS mirror arrays with reduced crosstalk

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EP1062685A1 (fr) 2000-12-27
JP2002509808A (ja) 2002-04-02

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