WO1999034385A1 - Dispositif d'emission electronique a effet de champ et son procede de production - Google Patents

Dispositif d'emission electronique a effet de champ et son procede de production Download PDF

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Publication number
WO1999034385A1
WO1999034385A1 PCT/EP1998/008403 EP9808403W WO9934385A1 WO 1999034385 A1 WO1999034385 A1 WO 1999034385A1 EP 9808403 W EP9808403 W EP 9808403W WO 9934385 A1 WO9934385 A1 WO 9934385A1
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WO
WIPO (PCT)
Prior art keywords
emitter
diamond
field electron
graphite
carbon
Prior art date
Application number
PCT/EP1998/008403
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English (en)
Inventor
Sergey Konstantinovich Gordeev
Victor Grigorejevich Ralchenko
Sergey Germanovich Zhukov
Alexander Vladimirovich Karabutov
Peter Ivanovich Belobrov
Michael Alexandrovich Negodaev
Original Assignee
Alfar International Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU97121538A external-priority patent/RU2137242C1/ru
Priority claimed from RU98120500A external-priority patent/RU2150154C1/ru
Application filed by Alfar International Ltd. filed Critical Alfar International Ltd.
Priority to AU24161/99A priority Critical patent/AU2416199A/en
Priority to UA2000063752A priority patent/UA42119C2/uk
Publication of WO1999034385A1 publication Critical patent/WO1999034385A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

Definitions

  • the present invention relates to a field electronic technology, and more precisely to a device for field electron emission, made of a material uniform in composition, comprising diamond particles, bonded by graphite-like carbon.
  • the present invention relates also to a method for producing a device for field electron emission, comprising forming an intermediate body of predetermined size and form from diamond particles, heat treating the intermediate body in a medium of gaseous hydrocarbon or hydrocarbons and making of shaped emitter surfaces in cases when it is necessary.
  • the materials with low threshold of field emission can be used in different electronic devices, such as efficient cathodes, e.g., for flat display computers and TV displays.
  • CMOS driver circuitry can be used in the display if such densities can be achieved with an applied voltage below 25 V/ ⁇ m for the gap between the emitters and the gate.
  • Good quality, intrinsic diamond can not, because of its insulating nature, emit electrons in a stable manner. Therefore diamonds are conventionally doped into n- type semiconductivity to take advantage of the low or negative electron affinity of diamond and to achieve low voltage emission. The n-type doping process has not been reliably achieved for diamond though.
  • P-type semiconductive diamond is not helpful for low voltage emission because the energy levels filled with electrons are below the vacuum level in n-type diamond.
  • a field of more than 70 v/ ⁇ m is needed for p-type semiconductivity diamond to generate an emission current density of 0.1 mA/mm 2 .
  • Electron. Lett., 27(1991), page 1459 discloses materials based on diamond having a low voltage emission.
  • the known emitter is made as polycrystalline diamond film, synthesized by deposition from a gaseous phase.
  • J. de Physique 1V, C5 (1996), page 113 discloses a material based on diamond which has a high electrical conductivity. A thin metallic layer is applied on the diamond surface to increase the diamond electrical conduction.
  • Appl. Phys.Lett, 64 (1994), page 2742 also discloses a material based on diamond. Doping of diamond helps to increase the electrical conductivity of the diamond.
  • Graphite-diamond materials for cold cathodes are now developed for very wide application fields. Such materials can be used for traditional emission cathodes as for energetic-electron emitters. Energetic-electron emitters providing electrons having kinetic energies in the order of 1keV without acceleration through vacuum. An average electric field of 105-1010 V/m applied across a layer of emissive cathode material accelerates the electrons inside the layer (US Pat. No. 5,729,094). Injection-enhancing contacts that are created by combining the emitter material (layered diamond and graphite) after annealing or by conventional dry anisotropic etching or ion bombardment techniques, are described in US Pat. No. 5,713,775.
  • Patent appl. WO 9718576 discloses diamond powder field emitters, such as an electron field emitter comprised of diamond powder prepared by shock synthesis and also a field-emitter cathode comprised of diamond powder prepared by shock synthesis attached to the surface of a substrate, by e.g. pressing it against a conductor or by creating a thin metal layer on the substrate.
  • a method for making electron emitters using ultra-fine (5-10,000 nm) diamond particles treated to enhance their capability for electron emission under low electric fields is disclosed in US Pat. No. 5,709,577.
  • the diamond particles heat-treated by hydrogen plasma allows the production of electron emission current density of at least 0.01 A/ cm 2 at very low electric fields of 0.5-1.5 V/ ⁇ m.
  • the emitters are fabricated by suspending the diamond particles in an aqueous solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, and then subjecting the coated substrate to a plasma of hydrogen, preferably at temperatures above 300°C. for 30 minutes or longer.
  • the described methods provide emitters with low emission threshold. Methods for their production are very complex in apparatus and provide articles of small sizes. It is very difficult to have homogeneous properties on the surface.
  • US Pat. No. 5,602,439 discloses an emitter comprising diamond and conductive carbon, preferably graphite.
  • the emitter has a graphite-like substrate covered with a diamond or a diamond-like carbon coating.
  • the emitter may also be graphite or carbon with embedded diamond.
  • a manner of the production is to make a graphite-like substrate by processing carbon fibers with a diamond particle suspension (particles size of 0.25-1.0 ⁇ m) in organic solvent. Then the substrate is dried. Diamond or diamondlike film is deposited on the substrate prepared by plasma or chemical deposition from carbon containing gases.
  • the produced emitter has a substrate with high electrical conductivity and a diamond layer on its surface. The emitter has good emission properties.
  • the known emitter material consisting of a graphite-like substrate being a conductor and a diamond or diamond-like coating active in emission, is a gradient material. During all emission processes, a gradual destruction of the emission surface takes place. Low substrate and irregular distribution of diamond particles in the covering results in the changing of emitter parameters (film thickness, film roughness, substrate thickness, substrate electrical conductivity etc.). This causes fluctuations and decrease in the emission properties.
  • the method for producing the known emitter is power consuming and rather complex apparatus is required. The process does not guarantee uniform deposition of diamond particles onto a rather irregular surface of carbon fibers. This results in irregular thickness of the diamond or diamond-like layer. The irregularity limits the surface area of emitters. The mentioned drawbacks prevent producing large articles with uniform composition.
  • Another manner is to mix e.g. graphite and diamond in a suitable binder material. After forming and curing of the binder material, the additional diamond surfaces may be exposed by treatment with a suitable etchant to remove binder and some graphite from outer diamond surfaces.
  • a suitable etchant to remove binder and some graphite from outer diamond surfaces.
  • Field emitters with shaped surfaces are known.
  • the J. Appl. Phys., v.47, 1976, p. 5248 discloses field emitters made of silicon, among them emitters with tips resulting from etching. Disadvantages with the method for producing the emitters is the demands for expensive equipment. It is very difficult to produce large cathodes with uniform properties. They are not stable at high electrical densities, and high fields are necessary for causing an emission. The known solution does not permit to produce emitters of desired shaped surface.
  • JP patent 08264111 Fabrication of field emission cold cathodes with sharp emitters is disclosed in JP patent 08264111.
  • the process involves immersing a Si substrate in a HF solution, the substrate having reverse-pyramid recesses at the sides of (III) phases, surface-roughening of the substrate by supersonic vibration in a micro-particle diamond-containing acetone solution, anisotropic etching of the substrate to make the recesses deeper and sharper, vapor depositing diamond into the recesses of the substrate, and subsequently removing the Si substrate.
  • the process provides cold cathodes with sharp and compact emitters.
  • the inventors has developed new field electron emitter materials consisting of diamond - graphitelike material, with uniform composition and without using layered or sandwich type structures, e.g. with coatings on substrates.
  • the object of the presented invention is to provide an field emitter combining low threshold of emission with high electrical conductivity, uniform surface properties and stable properties in the same time, capable of self-recovering.
  • a further object of the invention is to provide a process for producing the field electron emitter, simple in realization, which makes it possible to form large articles having desired shaped and controllable surface to obtain maximum increasing of emission.
  • the object of the invention is obtained by a field electron emitter consisting of diamond and graphite-like carbon, characterised in that said emitter within its volume has a uniform composition of diamond particles bonded by graphite-like carbon.
  • the content of graphite-like carbon is less than 35 wt % in the field electron emitter.
  • the diamond particle size is less than 60 ⁇ m, or preferably the diamond particle size is less than 20 nm or being in the interval of OJ-60 ⁇ m, or being a mixture of sizes less than 20 nm and sizes ranging in the interval of 0.1-60.
  • the emitter surface has at least one jut substantially having the form of a pyramid or a truncated pyramid or a cone or a truncated cone or a cylinder.
  • the emitter surface can have at least two types of juts.
  • the emitter surface has at least one tip.
  • the emitter surface provided with at least one jut can have an additional tip or additional tips.
  • the intermediate body is formed to have a non-shaped surface.
  • the invention relates also to a method for producing a field electron emitter, comprising forming an intermediate body and heat treating said body in a medium of carbon containing gases, characterised in that said intermediate body is formed in a size and form, which correspond to the desired size and form of the emitter, from diamond particles, and said heat treating is carried out in a medium of gaseous hydrocarbon or hydrocarbons.
  • said intermediate body is formed on a substrate made of copper or silicon.
  • Said substrate can be a shaped substrate so that the intermediate body is formed to have a surface with a specific desired shape, and have, at least, one pit substantially in the form of an inverted pyramid or an inverted truncated pyramid or an inverted cone or an inverted truncated cone or an inverted cylinder.
  • Said shaped substrate can be made by pressing or by anisotropic chemical etching.
  • a tip or several tips can be made on the emitter surface after said heat treating. Additional tip or tips can be made on said shaped emitter surface with a jut or juts, for example on the surface of the jut.
  • the tip or tips can be made on the emitter surface or shaped emitter surface, by ion bombardment. Said ion bombardment can be carried out by nitrogen or argon or neon ions.
  • the heat treating step is stopped before the graphite-like carbon content produced by heat treating exceeds 50 % of the diamond weight.
  • the intermediate body is formed on a non-shaped, substrate or without any substrate.
  • the ready article can be treated additionally by a stream of charged ions with energy of 1-50 keV to form a tip structure on the surface.
  • Fig. 1 shows emission current density vs electric field at increasing (marked with filled squares) and decreasing (marked with unfilled squares) electric field
  • Fig. 2 shows a scheme of the forming of a shaped emitter surface by using a pit etched substrate
  • Fig. 3 shows a field emitter with a shaped surface of pyramids in array
  • Fig. 4 shows emission current vs electric field for materials prepared in Example 3.
  • Fig. 5 shows a field emitter surface treated by nitrogen ion stream (magnification x
  • Fig. 6 shows emission current vs electric field after treating by nitrogen ' ion stream.
  • Fig. 7 shows a field emitter surface before treating by nitrogen-ion stream, (magnification x 5360).
  • the essence of the present invention consists in that the diamond particles, being bonded by the graphite-like carbon matrix, provide rather low threshold of cold electron emission.
  • the physical process of cold electron emission is determined by a strong local field at a electron emitting site, (it increases the emission).
  • the field electron emission process can be accompanied by a great change of the material structure at microlevel.
  • the field emitter according to the present invention has uniform structure through its whole volume. Said structure provides stable emitter properties during the emission operation. In the process of gradual destruction of the emitting surface during the emission operation, new diamond particles of same size and volume concentration appear on the material surface, i.e. self-recovering of the surface takes place.
  • the emitter material and structure according to the present invention determine high field emitter strength, which prevents deformation of the emitter surface. Such deformation is typical, e.g. for single silicon crystals with tip-surface or layered structures consisting e.g. of emitter material coatings on substrates.
  • the emitter according to the present invention is made of a 'diamond - graphite-like carbon' composite and has the principal advantage of allowing arrangement of freely placed juts of a predetermined density per area unit.
  • Presence of the graphite-like carbon matrix improves significantly the emission process. It is due to high electrical conductivity of the carbon matrix, which not only connects diamond particles to form a coherent composite but also provides an uniform electron transfer in the emission zone, i.e. to each diamond particle on the material surface.
  • a high volume concentration of diamond particles in the material determines a very high volume concentration of emitting nuclei on the surface.
  • Each nucleus is represented by a separate diamond particle, isolated from the other particles and yet connected with them by a current conductive contact, i.e. the graphite-like carbon matrix.
  • Simplicity of the production method makes it possible to form large articles, with easily controlled production of juts of micro-size to achieve maximal increasing of the electron field.
  • the produced emitter has low threshold of electron field emission. Changing of diamond and graphite-like carbon content in the material within the claimed ranges, as well as varying of the surface shape permits to control the emitter properties over a wide range. This ability to control the properties is very important, and required for optimizing the characteristics necessary for different specific applications. This is the reason why the field emitter and the method for producing the field emitter according to the present invention can have a wide field of applications, and be used in various devices for different purposes when emitter properties are predetermined.
  • Subsequent improvement of the field emitter without any change of its essence and basic properties, can be achieved by treating the surface, e.g. in a medium of microwave hydrogen plasma. This provides surface cleaning of the diamond particles in the surface layer from undesirable impurities.
  • Another improvement is to use doped diamond powders, where the diamond has been doped (in the surface or within the volume) with doping atoms (for example of B, P, N, Al and other atoms of metals and nonmetals), that changes the electrical and emission characteristics of the material.
  • doping atoms for example of B, P, N, Al and other atoms of metals and nonmetals
  • hydrocarbons can be used: acetylene, methane, ethane, propane, pentane, hexane, benzene and their derivatives, and natural gas.
  • the emitter according to the present invention can be produced by forming an intermediate body made from diamond particles of sizes less than 60 ⁇ m, or preferably 20 nm or ranging from OJ ⁇ m to 60 ⁇ m, or from a diamond particle mixture with sizes of less than 20 nm and ranging from 0J ⁇ m to 60 ⁇ m.
  • the diamond particles are formed by known methods into the intermediate body, having a predetermined shape and size. It is possible to use temporary binders, e.g., ethyl alcohol, phenolic resin etc. It is also possible to form without using any binders, by pressing or other methods.
  • Diamond particles of sizes larger than 60 ⁇ m it is difficult to achieve the desired uniform emission properties due to coarse structure of the material.
  • Diamond particles with sizes ranging from 20 nm to 0.1 ⁇ m are less preferable than others because there are no good classification methods for them.
  • the formed intermediate body is exposed in a medium of gaseous hydrocarbon or hydrocarbons and heat treated at a temperature exceeding the decomposition temperature of the hydrocarbon or hydrocarbons.
  • steps can be carried out according to the disclosure of the PCT/SE96/01216.
  • a chemical heterogeneous reaction takes place the in pores of the intermediate body resulting in formation of a carbon layer on the surface of the diamond particles.
  • the formed graphite-like carbon joins the diamond particles and produces a coherent composite where the graphite-like carbon serves as matrix. It is obvious from the description of the process, that the process provides uniform distribution of diamond particles throughout the surface of the final body, as well as uniform distribution of current conductive matrix in it.
  • the intermediate body is being treated until the graphite-like carbon content is increased by less than about 50% of the diamond weight.
  • the graphite-like carbon content is less than 35 wt %. Producing field emitters with a graphite-like carbon content more than 35 wt % is technically difficult.
  • the conductive matrix provides for equal potential in the diamond-matrix interfaces for all diamond particles, including those placed in the surface and emitting electrons (i.e., which emit electrons).
  • a shaped substrate can be used.
  • Said substrate has at least one pit of predetermined size, shape and arrangement.
  • the at least one pit on the shaped substrate may substantially have the form of an inverted pyramid, inverted truncated pyramid, inverted cone, inverted truncated cone or inverted cylinder.
  • the substrate can be made of copper, silicon and other materials resistant in a medium of hydrocarbon or hydrocarbons.
  • the desired substrate shape can be made by; press forming pits of desired shape, size and arrangement; by anisotropic chemical etching; ion-ray treating; progressive methods of lithography; and other modern hardware.
  • Chemical or electrochemical etching or other accessible methods can be used to remove away the non-shaped or shaped substrate. Removing of the substrate can be carried out before or after heat treating the intermediate body in a medium of hydrocarbons.
  • Chemical or electrochemical etching or other accessible methods are used to remove the shaped substrate, after formation of the diamond - graphite like carbon composite on top of it. As a result a field emitter with a shaped surface is produced.
  • the shape can be, for example, an array of pyramids.
  • tips can be prepared on the surface. The treating with ion charged stream is taking place until tips are formed on the substrate surface of the field emitter.
  • a shaped composite of diamond and graphite-like carbon having juts can additionally be treated by ion charged stream (nitrogen, argon ion etc.).
  • ion charged stream nitrogen, argon ion etc.
  • the size of the juts is about 10-100 ⁇ m, and of the tips about 1-1 O ⁇ m.
  • the stream energy is of 1-50 keV.
  • the ion stream treating is a known method and is disclosed, e.g., in US Pat. 5713775.
  • a powder of synthetic diamond with particle size of 0.1-1 ⁇ m (ACM 1/0, GOST 9206-80) was used.
  • the powder was mixed with a temporary binder - 25% alcohol solution of phenolic resin.
  • the quantity of said temporary binder was 4% of the diamond weight.
  • the mixture was formed by pressing in a press form.
  • the tablet was placed on a bottom puncheon having smooth surface.
  • the formed intermediate body was heat treated at 160°C during 3 hours to cure the temporary binder.
  • the process of forming the graphite-like carbon in the whole volume of the intermediate body provides an emitter material (diamond + graphite-like carbon) uniform in composition.
  • field electron emitter having a flat surface, consists of a composite material, comprising diamond particles with size of 0.1-1.0 ⁇ m and the graphite-like carbon.
  • the graphite-like carbon content is 20 wt%.
  • Fig. 1 shows the emission current density vs the electric field at increasing (marked with filled squares) and decreasing (marked with unfilled squares) electrical field.
  • the l-V curve is characterized by low emission threshold and high sensitivity from voltage - the current is increasing very fast when changing electrical field from 10 to 14 V/ ⁇ m,
  • the l-V curve is also characterized by the fact that there is practically no hysteresis. It is very important characteristic of a field electron emitter as the changing of current is under the effective control during increasing and decreasing of applied electrical field.
  • the insert on Fig. 1 shows emission the current density vs the electric field plotted in Fowler-Nordheim coordinates.
  • the emission threshold value is shown in the Table.
  • An article in the form of a tablet with a diameter of 50 mm and thickness of 2 mm has been formed from a powder of synthetic diamond with particles size of less than 20 nm.
  • the intermediate body was formed by pressing in a press form without temporary binder and with smooth puncheons.
  • the formed intermediate body, having a flat surface, was heat treated in a medium of natural gas at 730°C until the graphite-like carbon weight content had increased by 25 % of the diamond powder weight in the intermediate body.
  • the process of forming the graphite-like carbon in the whole volume of the intermediate body provides the emitter material being uniform in composition (diamond + graphite-like carbon).
  • the field electron emitter having a flat surface and being a composite material, comprises diamond particles with size of less than 20 nm and the graphite-like carbon.
  • the graphite-like carbon content is 20 wt%.
  • Electrical specific resistivity of the emitter is 800 Ohm * cm.
  • a powder of synthetic diamond was used with particle size of 0J-1 ⁇ m (ACM 1/0, GOST 9206- 80).
  • a Si-substrate was used for forming the surface of the final body.
  • Said substrate had pits, shaped as pyramids with a base area of 50x50 ⁇ m and a height of 35 ⁇ m, made by wet selective etching.
  • Said powder was mixed with the temporary binder - 25% alcohol solution of phenolic resin. The amount of said temporary binder was 4% of the diamond weight.
  • the mixture was placed on the substrate surface by pressing in a press form.
  • the substrate was placed on a bottom puncheon with the substrate pits situated against the mixture.
  • the substrate was removed by chemical etching in a medium of nitric and hydrofluoric acids. As a result, the substrate surface form was left on the surface of the final body.
  • the process of depositing graphite-like carbon in the whole volume of the intermediate body provides a field emitter material uniform in composition
  • Fig. 2 shows a scheme of forming the shaped emitter surface using a pit etched substrate, where 1 -pit etched substrate, 2-mixture of diamond particles and temporary binder, 3-intermediate body, 4-field emitter with a shaped surface.
  • the field electron emitter produced with a predetermined surface shape is made of a composite material, comprising diamond particles with size of 0J-1 ⁇ m and the graphite-like carbon. The graphite-like carbon content is 13 wt%.
  • Fig.3 presents the produced field emitter surface. It shows that the surface has the predetermined shape of pyramid array. Each pyramid has a base area of 50x50 ⁇ m and a height of 35 ⁇ m.
  • Fig.4 shows the dependence of emission current vs electric field. The l-V curve is characterized by very low emission threshold, high voltage sensitivity and practically absent hysteresis. The emission threshold value is shown in the Table. Example 4.
  • a powder of synthetic diamond was used with particle size of 3-5 ⁇ m (ACM 5/3, GOST 9206-80).
  • the powder was mixed with the temporary binder - 25% alcohol solution of phenolic resin.
  • the quantity of said temporary binder was 4% of the diamond weight.
  • the process provides the emitter material uniform in composition (diamond + graphite-like carbon).
  • the field electron emitter is made of the composite material, comprising diamond particles with size of 3-5 ⁇ m and the graphite-like carbon.
  • the graphite-like carbon content is 10wt%.
  • the emitter comprises tips on its surface, formed by ion beam treatment.
  • Fig.5 demonstrates the structure, having array of tips.
  • Fig.6 shows the dependence of emission current vs electric field.
  • the l-V curve is characterized by low emission threshold, high voltage sensitivity and practically absent hysteresis.
  • the emission threshold value is shown in the Table.
  • Fig.7 demonstrates the emitter surface before the ion bombardment
  • the emitters according to Examples 1-4 have been investigated on their emission properties.
  • the results of the investigations are shown in the Table.
  • the presented invention provides in comparison with known solutions a production method for a material, which in combination with a low emission threshold has the following advantages:

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  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

La présente invention concerne un dispositif d'émission électronique à effet de champ, fabriqué à partir de diamant et de carbone de type graphite. Selon la présente invention, le volume de cet émetteur renferme une composition uniforme de particules de diamant, liées par du carbone de type graphite. La présente invention concerne également un procédé de fabrication d'un tel dispositif d'émission électronique à effet de champ, ce procédé consistant à traiter thermiquement un corps intermédiaire dans un hydrocarbure gazeux.
PCT/EP1998/008403 1997-12-23 1998-12-22 Dispositif d'emission electronique a effet de champ et son procede de production WO1999034385A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU24161/99A AU2416199A (en) 1997-12-23 1998-12-22 A field electron emitter and a method for producing it
UA2000063752A UA42119C2 (uk) 1998-11-18 1998-12-22 Польовий емітер електронів і спосіб його виготовлення

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
RU97121538 1997-12-23
RU97121538A RU2137242C1 (ru) 1997-12-23 1997-12-23 Материал на основе алмаза с низким порогом полевой эмиссии электронов
RU98120500A RU2150154C1 (ru) 1998-11-18 1998-11-18 Полевой эмиттер электронов и способ его изготовления (варианты)
RU98120500 1998-11-18

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7273655B2 (en) 1999-04-09 2007-09-25 Shojiro Miyake Slidably movable member and method of producing same
US7771821B2 (en) 2003-08-21 2010-08-10 Nissan Motor Co., Ltd. Low-friction sliding member and low-friction sliding mechanism using same
US8096205B2 (en) 2003-07-31 2012-01-17 Nissan Motor Co., Ltd. Gear
US8152377B2 (en) 2002-11-06 2012-04-10 Nissan Motor Co., Ltd. Low-friction sliding mechanism

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
WO1997011923A1 (fr) * 1995-09-27 1997-04-03 Alfar International Ltd. Procede de production d'un bloc composite, plus precisement un bloc nanoporeux, et bloc nanoporeux ainsi produit
WO1997018576A1 (fr) * 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Emetteurs de champ en poudres de diamant et cathodes d'emission de champ produites a partir de ces poudres

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
WO1997011923A1 (fr) * 1995-09-27 1997-04-03 Alfar International Ltd. Procede de production d'un bloc composite, plus precisement un bloc nanoporeux, et bloc nanoporeux ainsi produit
WO1997018576A1 (fr) * 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Emetteurs de champ en poudres de diamant et cathodes d'emission de champ produites a partir de ces poudres

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7273655B2 (en) 1999-04-09 2007-09-25 Shojiro Miyake Slidably movable member and method of producing same
US8152377B2 (en) 2002-11-06 2012-04-10 Nissan Motor Co., Ltd. Low-friction sliding mechanism
US8096205B2 (en) 2003-07-31 2012-01-17 Nissan Motor Co., Ltd. Gear
US7771821B2 (en) 2003-08-21 2010-08-10 Nissan Motor Co., Ltd. Low-friction sliding member and low-friction sliding mechanism using same

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