WO1999028219A1 - Substrate-holding device, substrate-holding method and exposure device - Google Patents

Substrate-holding device, substrate-holding method and exposure device Download PDF

Info

Publication number
WO1999028219A1
WO1999028219A1 PCT/JP1998/004053 JP9804053W WO9928219A1 WO 1999028219 A1 WO1999028219 A1 WO 1999028219A1 JP 9804053 W JP9804053 W JP 9804053W WO 9928219 A1 WO9928219 A1 WO 9928219A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
oxide film
substrate holding
glass substrate
holding
Prior art date
Application number
PCT/JP1998/004053
Other languages
French (fr)
Japanese (ja)
Inventor
Takahiro Michimoto
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU90009/98A priority Critical patent/AU9000998A/en
Publication of WO1999028219A1 publication Critical patent/WO1999028219A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H01L21/67343—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates characterized by a material, a roughness, a coating or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Definitions

  • the present invention relates to a substrate holding apparatus, a substrate holding method, and an exposure apparatus.
  • the present invention relates to a substrate holding device for holding a substrate, a substrate holding method, and an exposure device for exposing a substrate, and more particularly to a substrate holding device, a substrate holding method, and an exposure device for suppressing occurrence of defects due to charging of a liquid crystal display glass substrate.
  • a device for optically processing a liquid crystal display glass substrate held by a substrate holding device for example, an exposure processing device, and a transfer device for transferring a liquid crystal display glass substrate between a carrier and a substrate holding device.
  • Several holes are provided on the surface of the substrate holding device on which the glass substrate for liquid crystal display transported by the transport device is placed or on the substrate mounting surface. It is configured to absorb the substrate and hold it firmly.
  • the substrate holding device In such a substrate holding device, contact and peeling of the glass substrate for liquid crystal display are repeatedly performed. Therefore, it is necessary to increase the mechanical strength of the surface of the substrate holding device, that is, the substrate mounting surface. In addition, the substrate mounting surface needs to be flat to prevent warpage of the glass substrate for liquid crystal display. Further, since optical processing is performed on the glass substrate for liquid crystal display, it is necessary to suppress reflection of light on the substrate mounting surface as much as possible. For this reason, as shown in the conceptual cross-sectional view of FIG. 4, the surface of an aluminum alloy or aluminum 1 that constitutes the base material of the substrate holding device is anodized by anodizing such as realmite. A film is formed, and is further colored with a dye or the like to form a hard black anodic oxide film 2 such as black alumite.
  • both the glass substrate for liquid crystal display and the substrate holding device having a black anodized surface treatment are insulators. Therefore, the glass substrate for liquid crystal display PT / JP98 / 04053
  • Static electricity is generated and charged when detached from the holding device.
  • glass substrates for liquid crystal displays are usually manufactured in a clean room, low humidity is maintained and static electricity is very likely to be generated.
  • liquid crystal display glass substrate on which the circuit patterns of the device are formed is charged by static electricity, a current will flow due to discharge during transport by the transport device, storage in or removal from the carrier, and the like. There was a risk of being destroyed. In addition, there is also a problem that color unevenness occurs when the glass substrate for liquid crystal display is charged.
  • An object of the present invention is to provide a substrate holding device, a substrate holding method, and an exposure device that can reduce the generation of static electricity between a substrate and the substrate holding device in view of such conventional problems. Disclosure of the invention
  • the present invention is characterized in that in a substrate holding device for holding a substrate, a substrate holding portion for holding the substrate with a material at the same or near position on the charging line as the substrate is provided.
  • the present invention is characterized in that, in the substrate holding device for holding a substrate, the substrate is a glass substrate, and a surface of the substrate holding portion that contacts the substrate is glassy.
  • the generation of static electricity due to the contact or separation between the glass substrate and the substrate holding portion is suppressed, and the charging of the glass substrate can be prevented or suppressed. For this reason, it is possible to suppress occurrence of defects in the glass substrate due to discharge or the like.
  • the present invention is characterized in that, in a substrate holding device for holding a substrate, the substrate is a glass substrate, and a surface of the substrate holding portion that contacts the substrate is covered with a silicon oxide film. This suppresses the generation of static electricity due to the contact or separation between the glass substrate and the substrate holding unit, and prevents or suppresses charging of the glass substrate. For this reason, it is possible to suppress the occurrence of defects of the glass substrate due to electric discharge or the like.
  • the present invention also provides a substrate holding device for holding a substrate, wherein the substrate is a glass substrate, the substrate holding portion is made of a material containing aluminum as a base material, and a black positive oxide film is formed on the surface of the base material; A silicon oxide film is formed on the portion of the anodic oxide film that comes into contact with the substrate. Thereby, generation of static electricity due to contact or separation between the glass substrate and the substrate holding portion is suppressed, and the charging of the glass substrate can be prevented or suppressed. For this reason, it is possible to suppress the occurrence of defects of the glass substrate due to discharge or the like.
  • an intermediate layer is provided between the black anodic oxide film and the silicon oxide film.
  • the intermediate layer can be any of Si, Cr, Ti.
  • the thickness of the intermediate layer is preferably 1 Onm or less. Thereby, reflection of light on the intermediate layer can be prevented, and optical processing such as exposure of the glass substrate for a display device can be accurately performed.
  • the substrate holding device of the present invention is suitable for holding a glass substrate for a display device on which a device circuit pattern is formed, as a substrate holding device or the like of an exposure apparatus. This enables accurate processing of the glass substrate for liquid crystal display.
  • the present invention is characterized in that in a substrate holding device for holding a substrate, the substrate is held with a material having the same composition as or a composition similar to that of the substrate.
  • the generation of static electricity due to the contact or separation between the substrate and the substrate holding portion is suppressed, and the charging of the substrate can be prevented or suppressed. For this reason, occurrence of a failure of the substrate due to discharge or the like can be suppressed.
  • the invention provides a substrate holding method for holding a substrate, wherein the substrate is held with a material having the same composition as or a composition similar to that of the substrate.
  • the glass substrate is brought into contact with the glassy surface and held.
  • the surface covered with the silicon oxide film is brought into contact with the glass substrate and held.
  • a material containing aluminum on a glass substrate As a base material, a black anodic oxide film is formed on the surface of the base material, and a substrate holding member having a silicon oxide film formed on the anodic oxide film is brought into contact with and held. This suppresses generation of static electricity due to contact or separation between the glass substrate and the substrate holding unit, and prevents or suppresses charging of the glass substrate. For this reason, it is possible to suppress the occurrence of defects in the glass substrate due to discharge or the like. .
  • the adhesion of the silicon oxide film can be improved.
  • the intermediate layer can be any of Si, Cr, Ti. Thereby, the adhesion of the silicon oxide film can be greatly improved.
  • the thickness of the intermediate layer is preferably 10 nm or less. Thus, reflection of light on the intermediate layer can be prevented, and optical processing such as exposure of a glass substrate for a display device can be accurately performed.
  • the substrate holding method of the present invention is suitable for holding a glass substrate for a display device on which a device circuit pattern is formed.
  • the present invention provides an exposure apparatus for exposing a pattern on a substrate, comprising: a substrate holding section for holding the substrate with a material having the same composition as or close to the substrate; and an exposure section for exposing the pattern to the substrate.
  • the exposure apparatus may be of a type that exposes a pattern to a substrate while moving the substrate. Further, the substrate holding section may hold the substrate along the horizontal direction.
  • FIG. 1 is a conceptual cross-sectional view near the substrate mounting surface of a substrate holding device according to an embodiment of the present invention.
  • FIG. 2A is a front view showing a schematic configuration of an exposure apparatus using a substrate holding device according to an embodiment of the present invention, in which a liquid crystal display glass substrate is moved between a carrier and a transport device.
  • FIG. 2A is a front view showing a schematic configuration of an exposure apparatus using a substrate holding device according to an embodiment of the present invention, in which a liquid crystal display glass substrate is moved between a carrier and a transport device.
  • FIG. 2B is a front view showing a schematic configuration of an exposure apparatus using the substrate holding device according to one embodiment of the present invention, and a liquid crystal display glass between the substrate holding device and the transfer device.
  • FIG. 4 is a diagram illustrating a state of movement of a substrate.
  • FIG. 3 is a sectional view conceptually showing an ion plating film forming apparatus used for manufacturing the substrate holding apparatus of FIG.
  • FIG. 4 is a conceptual cross-sectional view of the vicinity of a substrate mounting surface of a conventional substrate holding device.
  • FIG. 1 is a conceptual cross-sectional view near the substrate mounting surface of a substrate holding device according to an embodiment of the present invention.
  • the substrate holding apparatus includes a black anodic oxide film 2 such as black alumite formed on a surface of a material containing aluminum such as aluminum 1 or an aluminum alloy which constitutes a base material of the substrate holding apparatus.
  • a thin intermediate layer 3 made of any one of i, Cr, and Ti and a silicon oxide layer 4 as an outermost surface layer were formed.
  • the silicon oxide layer 4 is a layer formed by, for example, ion plating. Silicon oxide layer 4 may be amorphous or crystallized. Normally, a SiO 2 film is used, but it is effective even if it deviates from the stoichiometric ratio. Further, in the substrate holding device, it is preferable that the outermost surface layer of the silicon oxide layer 4 is formed at least on a portion that is in contact with a glass substrate for a display device such as a glass substrate for a liquid crystal display.
  • An intermediate layer 3 is formed between the black anodic oxide film 2 and the silicon oxide layer 4. Thereby, the interface between the films is activated, and the silicon oxide layer 4 having excellent adhesion can be formed. This effect is particularly remarkable when the intermediate layer 3 is any one of Si, Cr, and Ti.
  • the thickness of the intermediate layer 3 is preferably 10 nm or less. If the thickness of the intermediate layer 3 is greater than 10 nm, the intermediate layer 3 forms a mirror surface, and the reflection of light in optical processing such as exposure is increased, so that appropriate optical processing may not be performed. Also, if the thickness of the intermediate layer 3 is too thick, the color of the black anodic oxide film 2 may be different from the color obtained when the intermediate layer 3 is colored. This is more preferable because the colored color of the color can be accurately maintained. Instead of forming the intermediate layer 3, elaborate cleaning such as plasma cleaning may be performed on the black anodic oxide film 2, and then the silicon oxide layer 4 may be formed directly on the black anodic oxide film 2. Since the oxide film and the organic film on the black anodic oxide film 2 are accurately removed by plasma cleaning or the like, the silicon oxide layer 4 having excellent adhesion can be formed.
  • the sign of the electric charge is determined by the type of the substance, that is, the electric charge is determined by a charge line in which a substance that is easily charged positively and a substance that is easily charged negatively are arranged in a line.
  • the charge amount can be reduced as compared with substances that are separated from each other on the charged line. That is, by making the position of the substrate on the charging line the same as or close to the position of the charging line of the substrate holding device that holds the substrate, the static electricity generated between the substrate and the substrate holding device is reduced. can do.
  • a silicon oxide layer 4 is formed on the outermost surface of the contact surface with the liquid crystal display glass substrate.
  • a glass substrate for liquid crystal display are generally further glass or al structure including A 1 2 ⁇ 3, B a O, B 2 0 3 and S i 0 2 as a main component. Since the outermost layer of the substrate holding device and the glass substrate for liquid crystal display are close to each other on the charging line, even if contact and peeling occur frequently, little static electricity is generated. In addition, with a single layer of silicon oxide, film formation is easier than a mixed film in which a plurality of components are mixed.
  • the outermost surface layer of the substrate holding device is a substance having the same or a similar composition as the glass substrate for liquid crystal display, it is possible to suppress electrostatic charging. For this reason, even if the outermost layer of the substrate holding device is not a single layer of silicon oxide but a glass layer having the same or a similar composition as the glass substrate for liquid crystal display, the antistatic effect is large. If the outermost layer is at least a substance or glass containing silicon oxide as a main component, it is effective for preventing static electricity. T / JP98 4053
  • the substrate holding device of the present embodiment is used, for example, for an exposure device for manufacturing a liquid crystal display device, so that it is possible to prevent a glass substrate from being defective during a manufacturing process. become able to.
  • the exposure apparatus for a liquid crystal display glass substrate includes a carrier 25 for accommodating a plurality of liquid crystal display glass substrates 21, a substrate holding device 22 for holding the liquid crystal display glass substrate 21, An exposure processing apparatus for performing optical processing on the glass substrate for liquid crystal display 21 held by the substrate holding device 22; and a glass substrate for liquid crystal display 21 between the carrier 25 and the substrate holding device 22. And a transfer device 24 for transferring the same.
  • the substrate holding device 22 is provided with a plurality of substrate supporting pins 23 penetrating therethrough, and by moving the substrate supporting pins 23 up and down, the substrate mounting surface 22a is moved from the substrate mounting surface 22a.
  • the support pins 23 are configured to be able to protrude and retract.
  • the substrate holding device 22 is configured to be movable in a two-dimensional direction, that is, a horizontal direction as needed.
  • the exposure apparatus uniformly illuminates the reflecting mirror 27, the light source 28, the mask 30 on which the pattern is formed, and the entire mask 30 provided between the light source 28 and the mask 30.
  • a laser or the like may be used instead of the reflecting mirror 27 and the light source 28.
  • the transfer device 24 includes an arm 26 for performing operations such as taking out the liquid crystal display glass substrate 21 from the carrier 25 and placing it on the substrate holding device 22.
  • the arm 26 is configured to be able to adsorb the liquid crystal display glass substrate 21 by decompression of air or the like. In the exposure apparatus having such a configuration, the processing of the liquid crystal display glass substrate 21 is performed by the following operation.
  • the arm 26 of the transport device 24 is extended below the liquid crystal display glass substrate 21 stored in a desired position of the carrier 25, and the liquid crystal display glass substrate 21 is decompressed by air or the like. Hold by suction and lift.
  • the arm 26 is moved to pull out one glass substrate 21 for liquid crystal display from the carrier 25 (FIG. 2A).
  • the glass substrate for liquid crystal display 21 is moved to a position directly above the substrate holding device 22 by, for example, horizontal or rotational movement of the transfer device 24 or the arm 26.
  • the substrate support pins 23 are located below the substrate mounting surface 22 a of the substrate holding device 22 with the substrate support pins 23 lowered.
  • the suction of the liquid crystal display glass substrate 21 by the arm 26 is stopped, and the substrate support pins 23 are raised.
  • the substrate support pins 23 protrude from the substrate mounting surface 22a, and the tips contact and slightly lift the liquid crystal display glass substrate 21, so that the liquid crystal display glass substrate 21 is separated from the arm 26. .
  • the arm 26 is pulled forward, and the substrate support pins 23 are lowered.
  • the tip of the substrate support pin 23 moves below the substrate mounting surface 22a, the liquid crystal display glass substrate 21 is mounted on the substrate mounting surface 22a of the substrate holding device 22 and air is removed. It is firmly adsorbed and held firmly by pressure reduction (Fig. 2B).
  • the substrate holding device 22 is moved in the horizontal direction as necessary so that the held glass substrate 21 for liquid crystal display is placed at a predetermined position below the exposure processing device.
  • the light from the light source 28 is applied to the mask 30 via the illumination optical system 29, and the pattern formed on the mask 30 is held in the substrate holding device 22 by the objective lens 31.
  • An image is formed on the display glass substrate 21 and is exposed.
  • the substrate holding device 22 moves in a horizontal direction as necessary, and a predetermined pattern is exposed on a predetermined region of the liquid crystal display glass substrate 21.
  • the substrate holding device 22 is moved in a horizontal direction from the exposure processing device as necessary to remove the adsorbing force against the glass substrate 21 for liquid crystal display by decompressed air or the like, and the substrate support pins 22 are removed. Raise 2 3
  • the substrate support pins 23 protrude from the substrate mounting surface 22a, and the tips contact the liquid crystal display glass substrate 21 and are lifted. Therefore, the liquid crystal display glass substrate 21 is peeled off from the substrate mounting surface 22a.
  • the transfer device 24 extends the arm 26 and moves it below the liquid crystal display glass substrate 21 supported by the substrate support pins 23.
  • the substrate support pins 23 are lowered, and the liquid crystal display glass substrate 21 is placed on the arm 26 and adsorbed to the rear arm 26 by decompression of air or the like.
  • the liquid crystal display glass substrate 21 is stored at a desired position of the carrier 25 by horizontal or rotational movement of the transfer device 24 or operation of the arm 26.
  • the processing of the liquid crystal display glass substrate can be automatically and continuously performed.
  • an intermediate layer 3 and a silicon oxide layer 4 are formed on a black anodic oxide film 2 of a substrate holding device as shown in FIG. 1 using an ion plating film forming apparatus shown in FIG. How to do it.
  • Anodizing is applied to the aluminum 1 constituting the base material of the substrate mounting surface of the substrate holding device 2 2 to form an anodized film, which is then colored with a dye, etc., and the surface of the aluminum 1 is black anodized. Film 2 is formed.
  • a substrate holding device 22 on which a black anodic oxide film 2 is formed is placed in a vacuum chamber 10 of the ion plating apparatus shown in FIG. 3 so that a surface on which a silicon oxide layer 4 is to be formed is facing down.
  • the film-forming substance 11 is a single crystal of Si, and is provided immediately below the substrate holding device 22.
  • Argon gas 12, oxygen gas 13, and nitrogen gas 14 can be introduced into the vacuum chamber 10 while controlling the flow rates thereof. Further, the vacuum chamber 10 performs vacuum evacuation by using both the turbo molecular pump 15 and the rotary pump 16, and the degree of vacuum can be controlled by the degree of opening and closing of the vacuum valve 17.
  • the vacuum while fully opening the vacuum valve 1 7 and the degree of vacuum below IX 1 0 _ 3 P a.
  • a plasma 19 is generated from the plasma generator 18 toward the film-forming substance 11.
  • a discharge current of about 5 OA the degree of vacuum is adjusted to a vacuum valve 1 7 open degree so that the order of 8 X 1 0- 2 P a.
  • the film-forming substance 11 is dissolved by the plasma energy, and the ionized Si is formed as an intermediate layer 3 on the black anodic oxide film 2 of the substrate holding device 22.
  • the film formation rate of the intermediate layer 3 is controlled by adjusting the discharge current value so as to be about 0.2 nmZSec.
  • the film thickness was monitored by a film thickness monitor (not shown).
  • oxygen gas 13 was introduced at a flow rate of 100 ccin, and the degree of vacuum was reduced. adjusting the vacuum valve 1 7 closing degree physician to be about 8 x 1 0- 2 P a. Due to the introduction of the oxygen gas 13, the ionized Si reacts with oxygen to form a silicon oxide layer 4 on the intermediate layer 3.
  • the film formation rate of the silicon oxide layer 4 is controlled by adjusting the discharge current value so as to be about 0.2 nmZsec.
  • the film thickness is monitored by the film thickness monitor 1, and when the film thickness of the silicon oxide layer 4 becomes, for example, about 2 m, the discharge current is cut off and the film formation is completed.
  • the film can be formed easily and in a short time.
  • it gradually introduces oxygen gas 1 3, the material to be deposited by gradually shift from S i to S I_ ⁇ 2, formed an intermediate layer 3 and the silicon oxide layer 4 without clearly divided It can also be a film.
  • This embodiment relates to a method of forming a silicon oxide layer 4 directly on a black anodic oxide film 2 of a substrate holding apparatus by using an ion plating film forming apparatus shown in FIG.
  • a substrate holding apparatus 2 2 anodized black was placed in a vacuum chamber 1 0 performs vacuuming, the vacuum below 1 X 1 0- 3 P a . Then, to less than half the opening degree of the vacuum valve 1 7, to about 3 X 1 0- 1 P a degree of vacuum of the argon gas 1 2 flow rate was 2 0 cc / in the introduction. Thereafter, a plasma 19 is generated from the plasma generation device 18 toward the film-forming substance 11 composed of a single crystal of Si. At this time, the discharge current is maintained at about 1 OA or less so that the film-forming substance 11 does not dissolve.
  • a plasma is applied for about 10 minutes by applying a bias of about 150 V to the substrate holding device 22 with respect to the ground.
  • the degree of vacuum at this time to adjust the opening and closing degree of the vacuum valve 1 7 so that the order of 8 X 1 0- 2 P a.
  • the discharge current was increased to about 5 OA or more, and the film forming substance 11 was formed. Dissolve and ionize with plasma. The ionized Si reacts with oxygen gas to form silicon oxide, and is formed on the black anodic oxide film layer 2. Adjusting the vacuum valve 1 7 open degree as vacuum degree becomes about 8 x 1 0- 2 P a at this time. The deposition rate of the silicon oxide layer 4 is controlled by adjusting the discharge current value so as to be about 0.2 nmZZ or more. Monitor the film thickness with a film thickness monitor When the film thickness of the elementary layer 4 becomes, for example, about 2 ⁇ m, the discharge current is tapped to terminate the film formation.
  • the present invention relates to a display device glass such as a substance having the same or a similar composition as the display device glass substrate on the contact surface of the substrate holding device with the display device glass substrate.
  • a display device glass such as a substance having the same or a similar composition as the display device glass substrate on the contact surface of the substrate holding device with the display device glass substrate. Any material may be used as long as it forms the outermost surface layer made of a substance close to the substrate and the position on the charging line, and is not limited to the above embodiment.
  • the contact surface of the arm 26 of the transfer device 24 with the display device glass substrate 21 is desirably formed of a material having the same or a similar composition as the display device glass substrate 21. Thereby, static electricity generated between the display device glass substrate 21 and the arm 26 can be reduced.
  • An and repeat type exposure apparatus was used, but a scanning type exposure in which the pattern of the mask 30 was exposed by moving the mask 30 and the glass substrate 21 for liquid crystal display synchronously with respect to the objective lens 31.
  • the substrate holding device 22 of this embodiment can also be applied to an apparatus (see U.S. Pat. Nos. 5,579,147).
  • the present invention was also applied to a vertical exposure apparatus (U.S. Pat. No. 5,970,633, 1995) which holds a mask 30 and a glass substrate 21 for a display device in a vertical direction.
  • the example substrate holding device 22 can be applied.
  • the contents of U.S. Pat. No. 5,579,17 and U.S. Pat. No. 5,790,633 are incorporated herein by reference.
  • the exposure apparatus of the present embodiment incorporates an illumination optical system 29 composed of a plurality of lenses and an objective lens 31 into the exposure apparatus main body to perform optical adjustment, and the substrate holding device 22 includes a large number of mechanical parts. It can be manufactured by attaching to the stage, connecting wiring and piping, and then performing comprehensive adjustments (electrical adjustment, operation confirmation, etc.). It is desirable to manufacture the exposure equipment in a clean room where the temperature and cleanliness are controlled.
  • the arm 26 of the substrate holding device 22 and the transfer device 24 of this embodiment is not only an exposure device, but also a coater for applying a photoresist to the glass substrate 21 for the display device, and the exposure is completed.
  • the present invention can be widely applied to a developing machine for developing the glass substrate 21 for a display device.
  • the method of forming the outermost surface layer is not limited to the ion plating method, and is formed by various methods such as a sol-gel method, a plasma spray method, a sputtering method, a vacuum evaporation method, a CVD method, and the like. be able to. Industrial applicability
  • the outermost surface of the substrate holding device that comes into contact with the display glass substrate is made of the same glass as the display glass substrate, generation of static electricity due to contact and separation is suppressed.
  • the charging of the glass substrate for a display device can be prevented or suppressed. For this reason, it is possible to suppress the occurrence of defects of the glass substrate for a display device due to discharge or the like.
  • the outermost surface of the substrate holding device that is in contact with the display device glass substrate is made of silicon oxide having a composition close to that of the display device glass substrate, the generation of static electricity due to contact or separation is suppressed, The electrification of the glass substrate for a display device can be prevented or suppressed. For this reason, it is possible to suppress occurrence of defects of the glass substrate for a display device due to discharge or the like.
  • the outermost layer is a silicon oxide film, film formation is easy, and stable production of a substrate holding device is possible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A substrate-holding device for decreasing the generation of static electricity and suppressing a possible defect that may occur when a glass substrate for a display is electrically charged. Specifically, a substrate-holding device for holding the glass substrate for a display for effecting the substrate treatment, comprising a base member (1) made of a material containing aluminum, a black anodic oxidation film (2) formed on the surface of the base member, an intermediate layer (3) comprising any one of Si, Ti and Cr formed thereon, and a silicon oxide film (4) formed on a portion that comes in contact with the glass substrate for a display. The portion of the substrate-holding device coming in contact with the glass substrate for a display is formed of silicon oxide of a composition close to that of the glass substrate for a display. Therefore, generation of static electricity due to contact or peeling is suppressed, preventing a defect that may occur when the glass substrate for a display is electrically charged.

Description

明 細 書  Specification
基板保持装置、 基板保持方法および露光装置 技術分野 TECHNICAL FIELD The present invention relates to a substrate holding apparatus, a substrate holding method, and an exposure apparatus.
本発明は、 基板を保持する基板保持装置、 基板保持方法および基板を露光処理 する露光装置に関し、 特に液晶表示用ガラス基板の帯電による不良の発生を抑制 する基板保持装置、 基板保持方法および露光装置に関する。 背景技術  The present invention relates to a substrate holding device for holding a substrate, a substrate holding method, and an exposure device for exposing a substrate, and more particularly to a substrate holding device, a substrate holding method, and an exposure device for suppressing occurrence of defects due to charging of a liquid crystal display glass substrate. About. Background art
従来、 液晶表示用ガラス基板などの表示装置用ガラス基板の基板処理装置は、 液晶表示用ガラス基板を複数枚収納するためのキャリアと、 液晶表示用ガラス基 板を保持するための基板保持装置と、 基板保持装置に保持された液晶表示用ガラ ス基板に光学的な処理を行うための装置、 例えば露光処理装置と、 キャリアと基 板保持装置との間で液晶表示用ガラス基板を搬送する搬送装置とを備えている。 搬送装置によつて搬送された液晶表示用ガラス基板が載置される基板保持装置 の表面または基板載置面には、 いくつかの穴が設けられ、 空気の減圧を利用して 液晶表示用ガラス基板を吸着し、 強固に保持できるよう構成されている。  Conventionally, a substrate processing apparatus for a glass substrate for a display device such as a glass substrate for a liquid crystal display includes a carrier for accommodating a plurality of glass substrates for a liquid crystal display, and a substrate holding device for holding the glass substrate for a liquid crystal display. A device for optically processing a liquid crystal display glass substrate held by a substrate holding device, for example, an exposure processing device, and a transfer device for transferring a liquid crystal display glass substrate between a carrier and a substrate holding device. Device. Several holes are provided on the surface of the substrate holding device on which the glass substrate for liquid crystal display transported by the transport device is placed or on the substrate mounting surface. It is configured to absorb the substrate and hold it firmly.
このような基板保持装置では液晶表示用ガラス基板の接触と剥離が繰リ返し行 われる。 そのため、 基板保持装置の表面すなわち基板載置面の機械的強度を高め る必要がある。 また、 液晶表示用ガラス基板のそりなどを防ぐために、 基板載置 面は平坦である必要がある。 更に、 液晶表示用ガラス基板には光学的な処理を行 うので、 基板載置面での光の反射をできるだけ抑制する必要がある。 このため、 第 4図の概念的な断面図に示されるように、 基板保持装置の母材を構成するアル ミニゥム合金またはアルミニウム 1の表面には、 陽極酸化処理によリアルマイ ト などの陽極酸化皮膜が形成され、 更に染料などで着色されてブラックアルマイ ト などの硬質な黒色の陽極酸化皮膜 2が形成されている。  In such a substrate holding device, contact and peeling of the glass substrate for liquid crystal display are repeatedly performed. Therefore, it is necessary to increase the mechanical strength of the surface of the substrate holding device, that is, the substrate mounting surface. In addition, the substrate mounting surface needs to be flat to prevent warpage of the glass substrate for liquid crystal display. Further, since optical processing is performed on the glass substrate for liquid crystal display, it is necessary to suppress reflection of light on the substrate mounting surface as much as possible. For this reason, as shown in the conceptual cross-sectional view of FIG. 4, the surface of an aluminum alloy or aluminum 1 that constitutes the base material of the substrate holding device is anodized by anodizing such as realmite. A film is formed, and is further colored with a dye or the like to form a hard black anodic oxide film 2 such as black alumite.
しかしながら、 液晶表示用ガラス基板と黒色の陽極酸化の表面処理が施された 基板保持装置は、 どちらも絶縁体である。 従って、 液晶表示用ガラス基板を基板 P T/JP98/04053 However, both the glass substrate for liquid crystal display and the substrate holding device having a black anodized surface treatment are insulators. Therefore, the glass substrate for liquid crystal display PT / JP98 / 04053
保持装置から剥離させるときなどに、 静電気が発生し、 帯電してしまう。 しかも、 液晶表示用ガラス基板の製造は、 通常クリーンルーム内で行われるために低湿度 が保たれており、 静電気が非常に発生しやすい状態となっている。 Static electricity is generated and charged when detached from the holding device. In addition, since glass substrates for liquid crystal displays are usually manufactured in a clean room, low humidity is maintained and static electricity is very likely to be generated.
デバイスの回路パターンなどが形成された液晶表示用ガラス基板が静電気によ つて帯電してしまうと、 搬送装置による搬送中やキヤリァへの収納または搬出時 などに放電により電流が流れてしまい、 デバイスが破壊されてしまう恐れがあつ た。 また、 液晶表示用ガラス基板が帯電することにより、 色むらが生じてしまう という問題もあった。  If the liquid crystal display glass substrate on which the circuit patterns of the device are formed is charged by static electricity, a current will flow due to discharge during transport by the transport device, storage in or removal from the carrier, and the like. There was a risk of being destroyed. In addition, there is also a problem that color unevenness occurs when the glass substrate for liquid crystal display is charged.
本発明の目的は、 このような従来の問題点に鑑み、 基板と基板保持装置の間で の静電気の発生を軽減できる基板保持装置、 基板保持方法および露光装置を提供 することである。 発明の開示  An object of the present invention is to provide a substrate holding device, a substrate holding method, and an exposure device that can reduce the generation of static electricity between a substrate and the substrate holding device in view of such conventional problems. Disclosure of the invention
本発明は、 基板を保持する基板保持装置において、 基板と帯電列上で同じまた は近傍の位置の材質で基板を保持する基板保持部を備えたことを特徴とする。 こ れにより、 基板と基板保持部との接触や剥離による静電気の発生が抑制され、 基 板の帯電を防止または抑制できる。 このため、 放電などによる基板の不良の発生 を抑制することができる。  The present invention is characterized in that in a substrate holding device for holding a substrate, a substrate holding portion for holding the substrate with a material at the same or near position on the charging line as the substrate is provided. As a result, generation of static electricity due to contact or separation between the substrate and the substrate holding portion is suppressed, and the charging of the substrate can be prevented or suppressed. For this reason, it is possible to suppress occurrence of a failure of the substrate due to discharge or the like.
また、 本発明は、 基板を保持する基板保持装置において、 基板はガラス基板で あり、 基板保持部の基板と接触する表面はガラス質であることを特徴とする。 こ れにより、 ガラス基板と基板保持部との接触や剥離による静電気の発生が抑制さ れ、 ガラス基板の帯電を防止または抑制できる。 このため、 放電などによるガラ ス基板の不良の発生を抑制することができる。  Further, the present invention is characterized in that, in the substrate holding device for holding a substrate, the substrate is a glass substrate, and a surface of the substrate holding portion that contacts the substrate is glassy. As a result, the generation of static electricity due to the contact or separation between the glass substrate and the substrate holding portion is suppressed, and the charging of the glass substrate can be prevented or suppressed. For this reason, it is possible to suppress occurrence of defects in the glass substrate due to discharge or the like.
また、 本発明は、 基板を保持する基板保持装置において、 基板はガラス基板で あり、 基板保持部の基板と接触する表面を酸化珪素皮膜で覆ったことを特徴とす る。 これにより、 ガラス基板と基板保持部との接触や剥離による静電気の発生が 抑制され、 ガラス基板の帯電を防止または抑制できる。 このため、 放電などによ るガラス基板の不良の発生を抑制することができる。 また、 本発明は、 基板を保持する基板保持装置において、 基板はガラス基板で あり、 基板保持部はアルミニウムを含む材料を母材とし、 母材の表面に黒色の陽 極酸化皮膜を形成し、 陽極酸化皮膜上の基板と接触する部分に酸化珪素皮膜を形 成したことを特徴とする。 これにより、 ガラス基板と基板保持部との接触や剥離 による静電気の発生が抑制され、 ガラス基板の帯電を防止または抑制できる。 こ のため、 放電などによるガラス基板の不良の発生を抑制することができる。 Further, the present invention is characterized in that, in a substrate holding device for holding a substrate, the substrate is a glass substrate, and a surface of the substrate holding portion that contacts the substrate is covered with a silicon oxide film. This suppresses the generation of static electricity due to the contact or separation between the glass substrate and the substrate holding unit, and prevents or suppresses charging of the glass substrate. For this reason, it is possible to suppress the occurrence of defects of the glass substrate due to electric discharge or the like. The present invention also provides a substrate holding device for holding a substrate, wherein the substrate is a glass substrate, the substrate holding portion is made of a material containing aluminum as a base material, and a black positive oxide film is formed on the surface of the base material; A silicon oxide film is formed on the portion of the anodic oxide film that comes into contact with the substrate. Thereby, generation of static electricity due to contact or separation between the glass substrate and the substrate holding portion is suppressed, and the charging of the glass substrate can be prevented or suppressed. For this reason, it is possible to suppress the occurrence of defects of the glass substrate due to discharge or the like.
また、 本発明は、 前記黒色の陽極酸化膜と前記酸化珪素皮膜との間に中間層を 設ける。 これにより、 酸化珪素皮膜の密着性を向上させることができる。 中間層 は S i 、 C r、 T iのいずれかとすることができる。 これにより、 酸化珪素皮膜 の密着性を大きく向上させることができる。 中間層の厚みは 1 O n m以下とする のが好ましい。 これにより、 中間層での光の反射を防ぎ、 表示装置用ガラス基板 の露光などの光学的処理を的確に行うことができる。  In the present invention, an intermediate layer is provided between the black anodic oxide film and the silicon oxide film. Thereby, the adhesion of the silicon oxide film can be improved. The intermediate layer can be any of Si, Cr, Ti. Thereby, the adhesion of the silicon oxide film can be greatly improved. The thickness of the intermediate layer is preferably 1 Onm or less. Thereby, reflection of light on the intermediate layer can be prevented, and optical processing such as exposure of the glass substrate for a display device can be accurately performed.
本発明の基板保持装置は、 露光装置の基板保持装置等として用いて、 デバイス 回路パターンが形成された表示装置用ガラス基板を保持するのに好適である。 こ れによって、 液晶表示用ガラス基板の的確な処理が可能となる。  INDUSTRIAL APPLICABILITY The substrate holding device of the present invention is suitable for holding a glass substrate for a display device on which a device circuit pattern is formed, as a substrate holding device or the like of an exposure apparatus. This enables accurate processing of the glass substrate for liquid crystal display.
また、 本発明は、 基板を保持する基板保持装置において、 基板と同じ組成また は近い組成の材質で前記基板を保持することを特徴とする。 これにより、 基板と 基板保持部との接触や剥離による静電気の発生が抑制され、 基板の帯電を防止ま たは抑制できる。 このため、 放電などによる基板の不良の発生を抑制することが できる。  Further, the present invention is characterized in that in a substrate holding device for holding a substrate, the substrate is held with a material having the same composition as or a composition similar to that of the substrate. As a result, the generation of static electricity due to the contact or separation between the substrate and the substrate holding portion is suppressed, and the charging of the substrate can be prevented or suppressed. For this reason, occurrence of a failure of the substrate due to discharge or the like can be suppressed.
また、 本発明は、 基板を保持する基板保持方法において、 基板と同じ組成また は近い組成の材質で前記基板を保持することを特徴とする。 これにより、 基板と 基板保持部との接触や剥離による静電気の発生が抑制され、 基板の帯電を防止ま たは抑制できる。 このため、 放電などによる基板の不良の発生を抑制することが できる。  Further, the invention provides a substrate holding method for holding a substrate, wherein the substrate is held with a material having the same composition as or a composition similar to that of the substrate. As a result, the generation of static electricity due to the contact or separation between the substrate and the substrate holding portion is suppressed, and the charging of the substrate can be prevented or suppressed. For this reason, occurrence of a failure of the substrate due to discharge or the like can be suppressed.
本発明の基板保持方法でガラス基板を保持するときは、 ガラス基板にガラス質 の表面を接触させて保持する。 あるいは、 ガラス基板に酸化珪素皮膜で覆った表 面を接触させて保持する。 あるいは、 ガラス基板に、 アルミニウムを含む材料を 母材とし、 母材の表面に黒色の陽極酸化皮膜を形成し、 陽極酸化皮膜上に酸化珪 素皮膜を形成した基板保持部材を接触させて保持する。 これにより、 ガラス基板 と基板保持部との接触や剥離による静電気の発生が抑制され、 ガラス基板の帯電 を防止または抑制できる。 このため、 放電などによるガラス基板の不良の発生を 抑制することができる。 . When the glass substrate is held by the substrate holding method of the present invention, the glass substrate is brought into contact with the glassy surface and held. Alternatively, the surface covered with the silicon oxide film is brought into contact with the glass substrate and held. Alternatively, a material containing aluminum on a glass substrate As a base material, a black anodic oxide film is formed on the surface of the base material, and a substrate holding member having a silicon oxide film formed on the anodic oxide film is brought into contact with and held. This suppresses generation of static electricity due to contact or separation between the glass substrate and the substrate holding unit, and prevents or suppresses charging of the glass substrate. For this reason, it is possible to suppress the occurrence of defects in the glass substrate due to discharge or the like. .
また、 前記黒色の陽極酸化膜と前記酸化珪素皮膜との間に中間層を設けること で、 酸化珪素皮膜の密着性を向上させることができる。 中間層は S i、 C r、 T iのいずれかとすることができる。 これにより、 酸化珪素皮膜の密着性を大きく 向上させることができる。 中間層の厚みは 1 0 n m以下とするのが好ましい。 こ れにより、 中間層での光の反射を防ぎ、 表示装置用ガラス基板の露光などの光学 的処理を的確に行うことができる。  Further, by providing an intermediate layer between the black anodic oxide film and the silicon oxide film, the adhesion of the silicon oxide film can be improved. The intermediate layer can be any of Si, Cr, Ti. Thereby, the adhesion of the silicon oxide film can be greatly improved. The thickness of the intermediate layer is preferably 10 nm or less. Thus, reflection of light on the intermediate layer can be prevented, and optical processing such as exposure of a glass substrate for a display device can be accurately performed.
本発明の基板保持方法は、 デバイス回路パタ一ンが形成された表示装置用ガラ ス基板を保持するのに好適である。  The substrate holding method of the present invention is suitable for holding a glass substrate for a display device on which a device circuit pattern is formed.
また、 本発明は、 基板にパターンを露光する露光装置において、 基板と同じ組 成または近い組成の材質で基板を保持する基板保持部と、 パターンを基板に露光 する露光部とを備えることを特徴とする。 露光装置は、 基板を移動させている間 に基板にパターンを露光するタイプのものであってよい。 また、 基板保持部は水 平方向に沿って基板を保持するものであってよい。 図面の簡単な説明  Further, the present invention provides an exposure apparatus for exposing a pattern on a substrate, comprising: a substrate holding section for holding the substrate with a material having the same composition as or close to the substrate; and an exposure section for exposing the pattern to the substrate. And The exposure apparatus may be of a type that exposes a pattern to a substrate while moving the substrate. Further, the substrate holding section may hold the substrate along the horizontal direction. BRIEF DESCRIPTION OF THE FIGURES
第 1図は、 本発明の一実施形態に係る基板保持装置の基板載置面付近の概念的 な断面図である。  FIG. 1 is a conceptual cross-sectional view near the substrate mounting surface of a substrate holding device according to an embodiment of the present invention.
第 2 A図は、 本発明の一実施形態に係る基板保持装置を用いた露光装置の概略 的な構成を示す正面図であり、 キャリアと搬送装置との間での液晶表示用ガラス 基板の移動の様子を示す図である。  FIG. 2A is a front view showing a schematic configuration of an exposure apparatus using a substrate holding device according to an embodiment of the present invention, in which a liquid crystal display glass substrate is moved between a carrier and a transport device. FIG.
第 2 B図は、 本発明の一実施形態に係る基板保持装置を用いた露光装置の概略 的な構成を示す正面図であり、 基板保持装置と搬送装置との間での液晶表示用ガ ラス基板の移動の様子を示す図である。 第 3図は、 第 1図の基板保持装置の作製に用いたイオンプレーティング成膜装 置を概念的に示す断面図である。 FIG. 2B is a front view showing a schematic configuration of an exposure apparatus using the substrate holding device according to one embodiment of the present invention, and a liquid crystal display glass between the substrate holding device and the transfer device. FIG. 4 is a diagram illustrating a state of movement of a substrate. FIG. 3 is a sectional view conceptually showing an ion plating film forming apparatus used for manufacturing the substrate holding apparatus of FIG.
第 4図は、 従来の基板保持装置の基板載置面付近の概念的な断面図である。  FIG. 4 is a conceptual cross-sectional view of the vicinity of a substrate mounting surface of a conventional substrate holding device.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
以下、 本発明に係る基板保持装置につき図面を参照して説明する。  Hereinafter, a substrate holding device according to the present invention will be described with reference to the drawings.
第 1図は、 本発明の一実施形態に係る基板保持装置の基板載置面付近の概念的 な断面図である。  FIG. 1 is a conceptual cross-sectional view near the substrate mounting surface of a substrate holding device according to an embodiment of the present invention.
本実施形態の基板保持装置は、 基板保持装置の母材を構成するアルミニウム 1 やアルミニウム合金などのアルミニウムを含む材料の表面に形成されたブラック アルマイトなどの黒色の陽極酸化皮膜 2上に、 更に S i 、 C r、 T iのいずれか よりなる薄い中間層 3と、 最表面層としての酸化珪素層 4とを形成した。  The substrate holding apparatus according to the present embodiment includes a black anodic oxide film 2 such as black alumite formed on a surface of a material containing aluminum such as aluminum 1 or an aluminum alloy which constitutes a base material of the substrate holding apparatus. A thin intermediate layer 3 made of any one of i, Cr, and Ti and a silicon oxide layer 4 as an outermost surface layer were formed.
酸化珪素層 4は、 例えばイオンプレーティングにより成膜された層である。 酸 化珪素層 4は、 アモルファス状であっても、 結晶化していてもよい。 通常は S i 0 2の膜が用いられるが、 化学量論比からずれていても有効である。 また、 基板 保持装置において、 少なくとも液晶表示用ガラス基板などの表示装置用ガラス基 板と接触する部分には、 全て酸化珪素層 4の最表面層を形成しておくことが好ま しい。 The silicon oxide layer 4 is a layer formed by, for example, ion plating. Silicon oxide layer 4 may be amorphous or crystallized. Normally, a SiO 2 film is used, but it is effective even if it deviates from the stoichiometric ratio. Further, in the substrate holding device, it is preferable that the outermost surface layer of the silicon oxide layer 4 is formed at least on a portion that is in contact with a glass substrate for a display device such as a glass substrate for a liquid crystal display.
黒色の陽極酸化皮膜 2と酸化珪素層 4との間には中間層 3が形成されている。 これにより、 膜間の界面を活性化させ、 密着性の優れた酸化珪素層 4を形成する ことができる。 この効果は、 中間層 3が S i 、 C r、 T iのいずれかである場合 に特に顕著である。  An intermediate layer 3 is formed between the black anodic oxide film 2 and the silicon oxide layer 4. Thereby, the interface between the films is activated, and the silicon oxide layer 4 having excellent adhesion can be formed. This effect is particularly remarkable when the intermediate layer 3 is any one of Si, Cr, and Ti.
また、 中間層 3は 1 0 n m以下であることが好ましい。 中間層 3が 1 0 n mよ り厚ければ、 中間層 3が鏡面を形成し、 露光などの光学的処理における光の反射 が大きくなり、 適切な光学的処理が行えなくなる恐れがある。 また、 中間層 3が 厚すぎると黒色の陽極酸化皮膜 2の色が着色したときの色と異なってしまう場合 があるが、 中間層 3の厚みが 5 n m以下程度であれば、 陽極酸化皮膜 2の着色し た色を的確に保つことができるのでより好ましい。 中間層 3を形成する代わりに、 黒色の陽極酸化皮膜 2に対してプラズマ洗浄な どの念入りな洗浄を行い、 その後、 黒色の陽極酸化皮膜 2上に直接酸化珪素層 4 を形成してもよい。 プラズマ洗浄などにより黒色の陽極酸化皮膜 2上の酸化膜や 有機膜などが的確に除去されるので、 密着性の優れた酸化珪素層 4を形成するこ とができる。 The thickness of the intermediate layer 3 is preferably 10 nm or less. If the thickness of the intermediate layer 3 is greater than 10 nm, the intermediate layer 3 forms a mirror surface, and the reflection of light in optical processing such as exposure is increased, so that appropriate optical processing may not be performed. Also, if the thickness of the intermediate layer 3 is too thick, the color of the black anodic oxide film 2 may be different from the color obtained when the intermediate layer 3 is colored. This is more preferable because the colored color of the color can be accurately maintained. Instead of forming the intermediate layer 3, elaborate cleaning such as plasma cleaning may be performed on the black anodic oxide film 2, and then the silicon oxide layer 4 may be formed directly on the black anodic oxide film 2. Since the oxide film and the organic film on the black anodic oxide film 2 are accurately removed by plasma cleaning or the like, the silicon oxide layer 4 having excellent adhesion can be formed.
一般に、 異なる物質同士が接触および剥離したり、 摩擦したりすると、 両者の 間で電子が移動し、 静電気が発生する。 その電荷の符号は物質の種類によって決 まり、 すなわち正に帯電しやすい物質から負に帯電しやすい物質を一列に並べた 帯電列によって電荷が決定される。 しかしながら、 同質の物質同士あるいは組成 の近い材質同士であれば、 帯電列上の位置は同じかあるいは近く、 静電気は発生 しにくくなる。 また、 静電気が発生したとしても、 帯電列上の位置が離れている 物質同士と比べると、 帯電量は少なくすることができる。 すなわち、 基板の帯電 列上の位置と、 この基板を保持する基板保持装置の帯電列上の位置とを同じもし くは近くすることにより、 基板と基板保持装置との間で発生する静電気を小さく することができる。  In general, when different materials come into contact with each other, peel off, or rub, electrons move between them, generating static electricity. The sign of the electric charge is determined by the type of the substance, that is, the electric charge is determined by a charge line in which a substance that is easily charged positively and a substance that is easily charged negatively are arranged in a line. However, if materials of the same quality or materials having similar compositions are located at the same or close positions on the charging train, static electricity is unlikely to be generated. In addition, even if static electricity is generated, the charge amount can be reduced as compared with substances that are separated from each other on the charged line. That is, by making the position of the substrate on the charging line the same as or close to the position of the charging line of the substrate holding device that holds the substrate, the static electricity generated between the substrate and the substrate holding device is reduced. can do.
本実施形態の基板保持装置においては、 液晶表示用ガラス基板との接触面の最 表面には酸化珪素層 4が形成されている。 一方、 液晶表示用ガラス基板は、 一般 に、 S i 0 2を主成分として更に A 1 2〇 3、 B a O、 B 2 0 3などを含むガラスか ら構成されている。 基板保持装置の最表面層と液晶表示用ガラス基板は帯電列上 の位置が近いため、 接触や剥離が頻繁に起きても静電気の発生は少なくてすむ。 また、 酸化珪素の単一層であれば、 複数の成分が混合した混合膜に比べて成膜は 容易である。 In the substrate holding device of the present embodiment, a silicon oxide layer 4 is formed on the outermost surface of the contact surface with the liquid crystal display glass substrate. On the other hand, a glass substrate for liquid crystal display are generally further glass or al structure including A 1 2 〇 3, B a O, B 2 0 3 and S i 0 2 as a main component. Since the outermost layer of the substrate holding device and the glass substrate for liquid crystal display are close to each other on the charging line, even if contact and peeling occur frequently, little static electricity is generated. In addition, with a single layer of silicon oxide, film formation is easier than a mixed film in which a plurality of components are mixed.
基板保持装置の最表面層が液晶表示用ガラス基板と同質または近い組成の物質 であれば、 静電気による帯電を抑制することができる。 このため、 基板保持装置 の最表面層を、 酸化珪素の単一層ではなく液晶表示用ガラス基板と同じかまたは 近い組成のガラス層とした場合も、 静電気防止効果は大きい。 最表面層が少なく とも酸化珪素を主成分とした物質またはガラスであれば静電気防止には有効であ る。 T/JP98 4053 If the outermost surface layer of the substrate holding device is a substance having the same or a similar composition as the glass substrate for liquid crystal display, it is possible to suppress electrostatic charging. For this reason, even if the outermost layer of the substrate holding device is not a single layer of silicon oxide but a glass layer having the same or a similar composition as the glass substrate for liquid crystal display, the antistatic effect is large. If the outermost layer is at least a substance or glass containing silicon oxide as a main component, it is effective for preventing static electricity. T / JP98 4053
この様に、 本実施形態の基板保持装置は、 例えば、 液晶表示装置を製造するた めの露光装置に用いることで、 製造工程中にガラス基板に欠陥が発生するのを未 然に防ぐことができるようになる。 As described above, the substrate holding device of the present embodiment is used, for example, for an exposure device for manufacturing a liquid crystal display device, so that it is possible to prevent a glass substrate from being defective during a manufacturing process. become able to.
次に、 本実施形態の基板保持装置を用いた露光装置について、 第 2図を用いて 説明する。  Next, an exposure apparatus using the substrate holding device of the present embodiment will be described with reference to FIG.
この液晶表示用ガラス基板の露光装置は、 液晶表示用ガラス基板 2 1を複数枚 収納するためのキャリア 2 5と、 液晶表示用ガラス基板 2 1を保持するための基 板保持装置 2 2と、 基板保持装置 2 2に保持された液晶表示用ガラス基板 2 1に 光学的な処理を行うための露光処理装置と、 キャリア 2 5と基板保持装置 2 2と の間で液晶表示用ガラス基板 2 1 を搬送する搬送装置 2 4とを備えている。  The exposure apparatus for a liquid crystal display glass substrate includes a carrier 25 for accommodating a plurality of liquid crystal display glass substrates 21, a substrate holding device 22 for holding the liquid crystal display glass substrate 21, An exposure processing apparatus for performing optical processing on the glass substrate for liquid crystal display 21 held by the substrate holding device 22; and a glass substrate for liquid crystal display 21 between the carrier 25 and the substrate holding device 22. And a transfer device 24 for transferring the same.
液晶表示用ガラス基板 2 1が載置される基板保持装置 2 2の表面又は基板載置 面 2 2 aには、 図示しないいくつかの穴が設けられている。 基板保持装置 2 2に 液晶表示用ガラス基板 2 1が載置されているときには、 これらの穴から空気を減 圧することで、 液晶表示用ガラス基板 2 1を吸着することができる。 この様にし て、 液晶表示用ガラス基板 2 1を強固に保持できるように構成されている。  Several holes (not shown) are provided on the surface of the substrate holding device 22 on which the liquid crystal display glass substrate 21 is mounted or on the substrate mounting surface 22a. When the liquid crystal display glass substrate 21 is placed on the substrate holding device 22, the liquid crystal display glass substrate 21 can be sucked by reducing the pressure of air from these holes. In this manner, the liquid crystal display glass substrate 21 is configured to be held firmly.
また、 基板保持装置 2 2には、 これを貫通する複数本の基板支持ピン 2 3が設 けられており、 基板支持ピン 2 3を上下動させることにより、 基板載置面 2 2 a から基板支持ピン 2 3を出没できるよう構成されている。 更に、 基板保持装置 2 2は 2次元方向すなわち水平方向へ必要に応じて移動可能に構成されている。 露光処理装置は、 反射鏡 2 7と、 光源 2 8と、 パターンが形成されたマスク 3 0と、 光源 2 8とマスク 3 0との間に設けられたマスク 3 0全体の照明を均一に するための照明光学系 2 9と、 マスク 3 0のパターンを液晶表示用ガラス基板 2 1上に結像するための対物レンズ 3 1 とから構成されている。 また、 反射鏡 2 7 および光源 2 8の代わりにレーザーなどを用いてもよい。  Further, the substrate holding device 22 is provided with a plurality of substrate supporting pins 23 penetrating therethrough, and by moving the substrate supporting pins 23 up and down, the substrate mounting surface 22a is moved from the substrate mounting surface 22a. The support pins 23 are configured to be able to protrude and retract. Further, the substrate holding device 22 is configured to be movable in a two-dimensional direction, that is, a horizontal direction as needed. The exposure apparatus uniformly illuminates the reflecting mirror 27, the light source 28, the mask 30 on which the pattern is formed, and the entire mask 30 provided between the light source 28 and the mask 30. And an objective lens 31 for imaging the pattern of the mask 30 on the glass substrate 21 for liquid crystal display. Further, a laser or the like may be used instead of the reflecting mirror 27 and the light source 28.
搬送装置 2 4は、 液晶表示用ガラス基板 2 1のキャリア 2 5からの取り出しお よび基板保持装置 2 2への載置などの操作を行うためのアーム 2 6を備えている。 また、 アーム 2 6は空気の減圧などにより液晶表示用ガラス基板 2 1を吸着可能 に構成されている。 このような構成の露光装置においては、 次の'ような動作によリ液晶表示用ガラ ス基板 2 1の処理が行われる。 The transfer device 24 includes an arm 26 for performing operations such as taking out the liquid crystal display glass substrate 21 from the carrier 25 and placing it on the substrate holding device 22. The arm 26 is configured to be able to adsorb the liquid crystal display glass substrate 21 by decompression of air or the like. In the exposure apparatus having such a configuration, the processing of the liquid crystal display glass substrate 21 is performed by the following operation.
まず、 キャリア 2 5の所望の位置に収納されている液晶表示用ガラス基板 2 1 の下に搬送装置 2 4のアーム 2 6が引き延ばされ、 液晶表示用ガラス基板 2 1を 空気の減圧などにより吸着して保持し、 持ち上げる。 次に、 アーム 2 6を動かし てキャリア 2 5から液晶表示用ガラス基板 2 1を一枚引き抜く （第 2 A図） 。 搬送装置 2 4やアーム 2 6の水平移動や回転移動などによって、 液晶表示用ガ ラス基板 2 1 を基板保持装置 2 2の直上へ移動させる。 このとき、 基板支持ピン 2 3は降下した状態で、 基板保持装置 2 2の基板載置面 2 2 aよりも下に位置し ている。 次に、 液晶表示用ガラス基板 2 1のアーム 2 6による吸着を止め、 かつ 基板支持ピン 2 3を上昇させる。 基板支持ピン 2 3は基板載置面 2 2 aから突出 し、 先端部分が液晶表示用ガラス基板 2 1に接触しかつ若干持ち上げるので、 液 晶表示用ガラス基板 2 1はアーム 2 6から離される。 次に、 アーム 2 6を手前に 引き、 基板支持ピン 2 3を降下させる。 基板支持ピン 2 3の先端が基板載置面 2 2 aより下に移動すると、 液晶表示用ガラス基板 2 1は基板保持装置 2 2の基板 載置面 2 2 aに載置され、 かつ空気の減圧などによリしっかりと吸着されて固定 保持される （第 2 B図） 。  First, the arm 26 of the transport device 24 is extended below the liquid crystal display glass substrate 21 stored in a desired position of the carrier 25, and the liquid crystal display glass substrate 21 is decompressed by air or the like. Hold by suction and lift. Next, the arm 26 is moved to pull out one glass substrate 21 for liquid crystal display from the carrier 25 (FIG. 2A). The glass substrate for liquid crystal display 21 is moved to a position directly above the substrate holding device 22 by, for example, horizontal or rotational movement of the transfer device 24 or the arm 26. At this time, the substrate support pins 23 are located below the substrate mounting surface 22 a of the substrate holding device 22 with the substrate support pins 23 lowered. Next, the suction of the liquid crystal display glass substrate 21 by the arm 26 is stopped, and the substrate support pins 23 are raised. The substrate support pins 23 protrude from the substrate mounting surface 22a, and the tips contact and slightly lift the liquid crystal display glass substrate 21, so that the liquid crystal display glass substrate 21 is separated from the arm 26. . Next, the arm 26 is pulled forward, and the substrate support pins 23 are lowered. When the tip of the substrate support pin 23 moves below the substrate mounting surface 22a, the liquid crystal display glass substrate 21 is mounted on the substrate mounting surface 22a of the substrate holding device 22 and air is removed. It is firmly adsorbed and held firmly by pressure reduction (Fig. 2B).
保持した液晶表示用ガラス基板 2 1が露光処理装置下の所定の位置へ配置され るよう基板保持装置 2 2が必要に応じて水平方向に移動する。 光源 2 8の光は照 明光学系 2 9を介してマスク 3 0に照射され、 マスク 3 0に形成されているバタ ーンが対物レンズ 3 1により基板保持装置 2 2に保持されている液晶表示用ガラ ス基板 2 1に結像され、 露光される。 露光処理の間、 必要に応じて基板保持装置 2 2は水平方向に移動し、 液晶表示用ガラス基板 2 1の所定の領域に所定のパタ ーンが露光される。  The substrate holding device 22 is moved in the horizontal direction as necessary so that the held glass substrate 21 for liquid crystal display is placed at a predetermined position below the exposure processing device. The light from the light source 28 is applied to the mask 30 via the illumination optical system 29, and the pattern formed on the mask 30 is held in the substrate holding device 22 by the objective lens 31. An image is formed on the display glass substrate 21 and is exposed. During the exposure process, the substrate holding device 22 moves in a horizontal direction as necessary, and a predetermined pattern is exposed on a predetermined region of the liquid crystal display glass substrate 21.
露光などの光学的処理の後、 基板保持装置 2 2は必要に応じて露光処理装置か ら水平方向に移動し、 減圧空気などによる液晶表示用ガラス基板 2 1に対する吸 着力を取り除き、 基板支持ピン 2 3を上昇させる。 基板支持ピン 2 3は基板載置 面 2 2 aから突出し、 先端部分が液晶表示用ガラス基板 2 1に接触しかつ持ち上 げるので、 液晶表示用ガラス基板 2 1は基板載置面 2 2 aから剥離される。 After optical processing such as exposure, the substrate holding device 22 is moved in a horizontal direction from the exposure processing device as necessary to remove the adsorbing force against the glass substrate 21 for liquid crystal display by decompressed air or the like, and the substrate support pins 22 are removed. Raise 2 3 The substrate support pins 23 protrude from the substrate mounting surface 22a, and the tips contact the liquid crystal display glass substrate 21 and are lifted. Therefore, the liquid crystal display glass substrate 21 is peeled off from the substrate mounting surface 22a.
搬送装置 2 4は、 アーム 2 6をのばして基板支持ピン 2 3に支持されている液 晶表示用ガラス基板 2 1の下に移動させる。 基板支持ピン 2 3を降下させて液晶 表示用ガラス基板 2 1 をアーム 2 6上に載置しかつ空気の減圧などによリアーム 2 6に吸着させる。 搬送装置 2 4の水平移動または回転移動やアーム 2 6の操作 などによって、 キャリア 2 5の所望の位置に液晶表示用ガラス基板 2 1を収納す る。  The transfer device 24 extends the arm 26 and moves it below the liquid crystal display glass substrate 21 supported by the substrate support pins 23. The substrate support pins 23 are lowered, and the liquid crystal display glass substrate 21 is placed on the arm 26 and adsorbed to the rear arm 26 by decompression of air or the like. The liquid crystal display glass substrate 21 is stored at a desired position of the carrier 25 by horizontal or rotational movement of the transfer device 24 or operation of the arm 26.
これらの動作を繰り返し行うことによって、 液晶表示用ガラス基板の処理を自 動的に連続して行うことができる。  By repeating these operations, the processing of the liquid crystal display glass substrate can be automatically and continuously performed.
次に、 本発明に係る基板保持装置の製作方法を具体的な実施例によりさらに詳 細に説明する。  Next, a method for manufacturing the substrate holding device according to the present invention will be described in more detail with reference to specific examples.
(実施例 1 )  (Example 1)
この実施例は、 第 3図に示されるイオンプレーティング成膜装置を用いて、 第 1図のように基板保持装置の黒色の陽極酸化皮膜 2上に中間層 3と酸化珪素層 4 とを形成する方法に関するものである。  In this embodiment, an intermediate layer 3 and a silicon oxide layer 4 are formed on a black anodic oxide film 2 of a substrate holding device as shown in FIG. 1 using an ion plating film forming apparatus shown in FIG. How to do it.
基板保持装置 2 2の基板載置面の部分の母材を構成するアルミニウム 1に陽極 酸化処理を施して陽極酸化皮膜を形成し、 更に染料などで着色し、 アルミニウム 1の表面に黒色の陽極酸化皮膜 2を形成する。  Anodizing is applied to the aluminum 1 constituting the base material of the substrate mounting surface of the substrate holding device 2 2 to form an anodized film, which is then colored with a dye, etc., and the surface of the aluminum 1 is black anodized. Film 2 is formed.
第 3図のイオンプレーティング装置の真空槽 1 0中で、 酸化珪素層 4を形成す べき面が下になるよう、 黒色の陽極酸化皮膜 2を形成した基板保持装置 2 2を設 置する。 成膜物質 1 1は S iの単結晶を用い、 基板保持装置 2 2の直下に設置す る。  A substrate holding device 22 on which a black anodic oxide film 2 is formed is placed in a vacuum chamber 10 of the ion plating apparatus shown in FIG. 3 so that a surface on which a silicon oxide layer 4 is to be formed is facing down. The film-forming substance 11 is a single crystal of Si, and is provided immediately below the substrate holding device 22.
真空槽 1 0には、 アルゴンガス 1 2、 酸素ガス 1 3、 窒素ガス 1 4がそれぞれ 流量を制御しながら導入することができる。 また、 真空槽 1 0は、 ターボ分子ポ ンプ 1 5とロータリ一ポンプ 1 6とを併用して真空引きを行い、 真空バルブ 1 7 の開閉度合いによって、 真空度の制御が可能である。  Argon gas 12, oxygen gas 13, and nitrogen gas 14 can be introduced into the vacuum chamber 10 while controlling the flow rates thereof. Further, the vacuum chamber 10 performs vacuum evacuation by using both the turbo molecular pump 15 and the rotary pump 16, and the degree of vacuum can be controlled by the degree of opening and closing of the vacuum valve 17.
まず、 真空バルブ 1 7を全開にした状態で真空引きを行い、 真空度を I X 1 0 _ 3 P a以下にする。 次に、 真空バルブ 1 7の開閉度合いを半分以下にし、 ァルゴ ンガス 1 2を流量 2 0 c c / m i n ( c m 3 ,分） 導入して真空度を 3 X 1 0一 1 P a程度にする。 その後、 プラズマ発生装置 1 8から成膜物質 1 1に向けてブラ ズマ 1 9を発生させる。 放電電流を 5 O A程度にして、 真空度が 8 X 1 0— 2 P a 程度になるように真空バルブ 1 7開閉度合いを調整する。 First, the vacuum while fully opening the vacuum valve 1 7 and the degree of vacuum below IX 1 0 _ 3 P a. Next, halve the degree of opening and closing of the vacuum valve 17 Ngasu 1 2 the flow rate 2 0 cc / min (cm 3 , min) introduced into 3 X 1 0 about one 1 P a degree of vacuum. Thereafter, a plasma 19 is generated from the plasma generator 18 toward the film-forming substance 11. And a discharge current of about 5 OA, the degree of vacuum is adjusted to a vacuum valve 1 7 open degree so that the order of 8 X 1 0- 2 P a.
成膜物質 1 1がプラズマエネルギーによって溶解し、 イオン化された S iが基 板保持装置 2 2の黒色の陽極酸化皮膜 2上に中間層 3として成膜される。 中間層 3の成膜速度は 0 . 2 n mZ s e c程度となるよう放電電流値を調整することに よって制御される。  The film-forming substance 11 is dissolved by the plasma energy, and the ionized Si is formed as an intermediate layer 3 on the black anodic oxide film 2 of the substrate holding device 22. The film formation rate of the intermediate layer 3 is controlled by adjusting the discharge current value so as to be about 0.2 nmZSec.
図示しない膜厚モニターによって膜厚を監視し、 S i よりなる中間層 3の膜厚 が例えば 3〜 8 n m程度となったところで、 酸素ガス 1 3を流量 1 0 0 c c i n導入し、 真空度が 8 x 1 0— 2 P a程度になるように真空バルブ 1 7開閉度合 いを調整する。 酸素ガス 1 3が導入されたことによって、 イオン化された S iが 酸素と反応し、 中間層 3上に酸化珪素層 4として成膜される。 The film thickness was monitored by a film thickness monitor (not shown). When the film thickness of the intermediate layer 3 made of Si became, for example, about 3 to 8 nm, oxygen gas 13 was introduced at a flow rate of 100 ccin, and the degree of vacuum was reduced. adjusting the vacuum valve 1 7 closing degree physician to be about 8 x 1 0- 2 P a. Due to the introduction of the oxygen gas 13, the ionized Si reacts with oxygen to form a silicon oxide layer 4 on the intermediate layer 3.
酸化珪素層 4の成膜速度も 0 . 2 n mZ s e c程度となるよう放電電流値を調 整することによって制御される。 膜厚モニタ一によって膜厚を監視し、 酸化珪素 層 4の膜厚が例えば 2 m程度となったところで放電電流を切り、 成膜を終了す る。  The film formation rate of the silicon oxide layer 4 is controlled by adjusting the discharge current value so as to be about 0.2 nmZsec. The film thickness is monitored by the film thickness monitor 1, and when the film thickness of the silicon oxide layer 4 becomes, for example, about 2 m, the discharge current is cut off and the film formation is completed.
S iの中間層 3と酸化珪素層 4を同一の成膜工程で連続して形成するので、 容 易かつ短時間での成膜が可能である。 また、 酸素ガス 1 3の導入を徐々に行い、 成膜される物質を S iから S i〇2へ徐々に変えていくことで、 中間層 3と酸化 珪素層 4を明確に分けずに成膜することもできる。 Since the Si intermediate layer 3 and the silicon oxide layer 4 are continuously formed in the same film forming process, the film can be formed easily and in a short time. In addition, it gradually introduces oxygen gas 1 3, the material to be deposited by gradually shift from S i to S I_〇 2, formed an intermediate layer 3 and the silicon oxide layer 4 without clearly divided It can also be a film.
このような方法で黒色の陽極酸化皮膜 2上に更に S iの中間層 3と酸化珪素層 を成膜した基板保持装置を用いたところ、 液晶表示用ガラス基板との接触や剥 離が繰り返し行われても、 液晶表示用ガラス基板の帯電は少なかった。 また、 液 晶表示用ガラス基板のデバイス回路パターンの放電による破壊などの不良発生も 抑制することができた。 酸化珪素層 4の密着性も良好で、 はがれなどは生じなか つた。露光などの液晶表示用ガラス基板の光学的処理も的確に行うことができた。 また、 中間層 3として S i層の代わりに T i層または C r層を用いた場合につ いても、 ほぼ同様の効果が得られた。 When a substrate holding device in which a silicon intermediate layer 3 and a silicon oxide layer were further formed on the black anodic oxide film 2 by such a method was used, contact and peeling with the liquid crystal display glass substrate were repeated. Even so, the charge on the glass substrate for liquid crystal display was small. In addition, the occurrence of defects such as destruction due to discharge of the device circuit pattern of the liquid crystal display glass substrate could be suppressed. The adhesion of the silicon oxide layer 4 was also good, and no peeling occurred. Optical processing of the liquid crystal display glass substrate, such as exposure, could be performed accurately. Also, when the Ti layer or the Cr layer is used as the intermediate layer 3 instead of the Si layer, However, almost the same effect was obtained.
(実施例 2 )  (Example 2)
この実施例は、 第 3図に示されるイオンプレーティング成膜装置を用いて、 基 板保持装置の黒色の陽極酸化皮膜 2上に直接酸化珪素層 4を形成する方法に関す るものである。  This embodiment relates to a method of forming a silicon oxide layer 4 directly on a black anodic oxide film 2 of a substrate holding apparatus by using an ion plating film forming apparatus shown in FIG.
前述の実施例 1 と同様、 黒色の陽極酸化処理を施した基板保持装置 2 2を真空 槽 1 0中に設置し、 真空引きを行い、 真空度を 1 X 1 0— 3 P a以下にする。 次に、 真空バルブ 1 7の開閉度合いを半分以下にし、 アルゴンガス 1 2を流量 2 0 c c / i n導入して真空度を 3 X 1 0— 1 P a程度にする。 その後、 プラズマ発生装 置 1 8から S iの単結晶からなる成膜物質 1 1に向けてプラズマ 1 9を発生させ る。 この時の放電電流は約 1 O A以下の状態を保ち、 成膜物質 1 1が溶解しない ようにする。 この状態を保持したまま、 アースに対して基板保持装置 2 2にバイ ァスを一 5 0 V程度かけてプラズマ洗浄を約 1 0分間行う。 この時の真空度は 8 X 1 0— 2 P a程度になるように真空バルブ 1 7の開閉度合いを調整する。 As in the above first embodiment, a substrate holding apparatus 2 2 anodized black was placed in a vacuum chamber 1 0 performs vacuuming, the vacuum below 1 X 1 0- 3 P a . Then, to less than half the opening degree of the vacuum valve 1 7, to about 3 X 1 0- 1 P a degree of vacuum of the argon gas 1 2 flow rate was 2 0 cc / in the introduction. Thereafter, a plasma 19 is generated from the plasma generation device 18 toward the film-forming substance 11 composed of a single crystal of Si. At this time, the discharge current is maintained at about 1 OA or less so that the film-forming substance 11 does not dissolve. With this state maintained, a plasma is applied for about 10 minutes by applying a bias of about 150 V to the substrate holding device 22 with respect to the ground. The degree of vacuum at this time to adjust the opening and closing degree of the vacuum valve 1 7 so that the order of 8 X 1 0- 2 P a.
次に、 アルゴンガス 1 2を導入したまま、 酸素ガス 1 3を流量 1 0 0 c c Zm i n導入し、 真空度は 8 X 1 0— 2 P a程度になるように真空バルブ 1 7開閉度合 いを調整し、 バイアスを一 5 0 V程度かけてプラズマ洗浄を約 1 0分間行う。 次に、 酸素ガス 1 3の導入を止め、 窒素ガス 1 4を流量 6 0 c c Zni i n導入 し、 真空度は 8 X 1 0— 2 P a程度になるように真空バルブ 1 7開閉度合いを調整 し、 バイアスを— 5 0 V程度かけてプラズマ洗浄を約 1 0分間行う。 その後、 窒 素ガス 1 4の導入とバイアスとを止めて、 プラズマ洗浄を終了する。 Next, while introducing argon gas 1 2, oxygen gas 1 3 flow 1 0 0 cc Zm in introduced, the degree of vacuum 8 X 1 0- 2 P a degree in the vacuum valve 1 7 closing degree physician so And perform plasma cleaning with a bias of about 150 V for about 10 minutes. Next, oxygen stopping the introduction of gas 1 3, the nitrogen gas 1 4 flow 6 0 cc Zni in introduced, the degree of vacuum 8 X 1 0- 2 P a degree to become adjusted vacuum valve 1 7 open degree as Then, plasma cleaning is performed for about 10 minutes while applying a bias of about −50 V. Thereafter, the introduction of nitrogen gas 14 and the bias are stopped, and the plasma cleaning is terminated.
次に、 流量 2 0 c c / m i nのアルゴンガス 1 2と流量 1 0 0 c c / m i nの 酸素ガス 1 3とを導入しながら、 放電電流を約 5 O A以上に上昇させ、 成膜物質 1 1を溶解させてプラズマでイオン化させる。 イオン化した S iは酸素ガスと反 応し、 酸化珪素となって黒色の陽極酸化皮膜層 2上に成膜される。 このときの真 空度も 8 x 1 0— 2 P a程度になるように真空バルブ 1 7開閉度合いを調整する。 酸化珪素層 4の成膜速度は約 0 . 2 n mZ s e c以上となるよう放電電流値を 調整することによって制御される。 膜厚モニタ一によって膜厚を監視し、 酸化珪 素層 4の膜厚が例えば 2 μ m程度となったところで放電電流を t刀り、 成膜を終了 する。 Next, while introducing argon gas 12 at a flow rate of 20 cc / min and oxygen gas 13 at a flow rate of 100 cc / min, the discharge current was increased to about 5 OA or more, and the film forming substance 11 was formed. Dissolve and ionize with plasma. The ionized Si reacts with oxygen gas to form silicon oxide, and is formed on the black anodic oxide film layer 2. Adjusting the vacuum valve 1 7 open degree as vacuum degree becomes about 8 x 1 0- 2 P a at this time. The deposition rate of the silicon oxide layer 4 is controlled by adjusting the discharge current value so as to be about 0.2 nmZZ or more. Monitor the film thickness with a film thickness monitor When the film thickness of the elementary layer 4 becomes, for example, about 2 μm, the discharge current is tapped to terminate the film formation.
このような方法で黒色の陽極酸化皮膜 2上に更に酸化珪素層 4を成膜した基板 保持装置を用いたところ、 液晶表示用ガラス基板との接触や剥離が繰り返し行わ れても、 液晶表示用ガラス基板の帯電は少なかった。 また、 液晶表示用ガラス基 板のデバイス回路パターンの放電による破壊などの不良発生も抑制することがで きた。 酸化珪素層 4の密着性も良好で、 はがれなどは生じなかった。 露光などの 液晶表示用ガラス基板の光学的処理も的確に行うことができた。  When a substrate holding device in which a silicon oxide layer 4 was further formed on the black anodic oxide film 2 by such a method was used, even if contact and peeling with the liquid crystal display glass substrate were repeatedly performed, the liquid crystal display The charge on the glass substrate was small. Also, it was possible to suppress the occurrence of defects such as destruction due to discharge of the device circuit pattern of the glass substrate for liquid crystal display. The adhesion of the silicon oxide layer 4 was good, and no peeling occurred. Optical processing of the liquid crystal display glass substrate, such as exposure, was also performed accurately.
具体的な実施形態をあげたが、 本発明は、 基板保持装置の表示装置用ガラス基 板との接触面に、 表示装置用ガラス基板と同じかまたは組成の近い物質のような 表示装置用ガラス基板と帯電列上の位置の近い物質からなる最表面層を形成した ものであればよく、 前述の実施形態には限定されない。  Although a specific embodiment has been given, the present invention relates to a display device glass such as a substance having the same or a similar composition as the display device glass substrate on the contact surface of the substrate holding device with the display device glass substrate. Any material may be used as long as it forms the outermost surface layer made of a substance close to the substrate and the position on the charging line, and is not limited to the above embodiment.
また、 搬送装置 2 4のアーム 2 6の表示装置用ガラス基板 2 1 との接触面も同 様に、 表示装置用ガラス基板 2 1 と同じかまたは組成の近い物質で形成すること が望ましい。 これにより、 表示装置用ガラス基板 2 1 とアーム 2 6との間で発生 する静電気を減少することができる。  Similarly, the contact surface of the arm 26 of the transfer device 24 with the display device glass substrate 21 is desirably formed of a material having the same or a similar composition as the display device glass substrate 21. Thereby, static electricity generated between the display device glass substrate 21 and the arm 26 can be reduced.
なお、 本実施例の露光装置として、 マスク 3 0と液晶表示用ガラス基板 2 1 と を静止した状態でマスク 3 0のパターンを露光し、 液晶表示用ガラス基板 2 1 を 順次ステップ移動させるステップ ' アンド · リピート型の露光装置を用いたが、 マスク 3 0と液晶表示用ガラス基板 2 1 とを対物レンズ 3 1に対して同期移動す ることによりマスク 3 0のパターンを露光する走査型の露光装置（米国特許第 5， 5 7 9， 1 4 7号参照） にも本実施例の基板保持装置 2 2を適用することができ る。  Note that, as the exposure apparatus of the present embodiment, a step of exposing the pattern of the mask 30 while the mask 30 and the glass substrate 21 for liquid crystal display are stationary and sequentially moving the glass substrate 21 for liquid crystal display step by step. An and repeat type exposure apparatus was used, but a scanning type exposure in which the pattern of the mask 30 was exposed by moving the mask 30 and the glass substrate 21 for liquid crystal display synchronously with respect to the objective lens 31. The substrate holding device 22 of this embodiment can also be applied to an apparatus (see U.S. Pat. Nos. 5,579,147).
さらに、 マスク 3 0と表示装置用ガラス基板 2 1 とを鉛直方向に沿って保持す る縦型の露光装置 （ 1 9 9 5年米国特許出願第 5 7 0 9 6 3号） にも本実施例の 基板保持装置 2 2を適用することができる。 なお、 米国特許第 5 , 5 7 9 , 1 7号と米国特許出願第 5 7 0 9 6 3号の内容は、 引用によって本明細書に包含さ れる。 また、 本実施例の露光装置は、 複数のレンズから構成される照明光学系 2 9、 対物レンズ 3 1 を露光装置本体に組み込み光学調整するとともに、 基板保持装置 2 2を多数の機械部品からなるステージに取り付けて配線や配管を接続し、 更に 総合調整 （電気調整、 動作確認等） をすることにより製造することができる。 な お、 露光装置の製造は、 温度及びクリーン度等が管理されたクリーンルームで行 うことが望ましい。 Furthermore, the present invention was also applied to a vertical exposure apparatus (U.S. Pat. No. 5,970,633, 1995) which holds a mask 30 and a glass substrate 21 for a display device in a vertical direction. The example substrate holding device 22 can be applied. The contents of U.S. Pat. No. 5,579,17 and U.S. Pat. No. 5,790,633 are incorporated herein by reference. Further, the exposure apparatus of the present embodiment incorporates an illumination optical system 29 composed of a plurality of lenses and an objective lens 31 into the exposure apparatus main body to perform optical adjustment, and the substrate holding device 22 includes a large number of mechanical parts. It can be manufactured by attaching to the stage, connecting wiring and piping, and then performing comprehensive adjustments (electrical adjustment, operation confirmation, etc.). It is desirable to manufacture the exposure equipment in a clean room where the temperature and cleanliness are controlled.
なお、 本実施例の基板保持装置 2 2や搬送装置 2 4のアーム 2 6は、 露光装置 のみならず、 表示装置用ガラス基板 2 1にフォトレジストを塗布するコ一タや、 露光が終了した表示装置用ガラス基板 2 1を現像する現像機などに幅広く適用す ることができる。  The arm 26 of the substrate holding device 22 and the transfer device 24 of this embodiment is not only an exposure device, but also a coater for applying a photoresist to the glass substrate 21 for the display device, and the exposure is completed. The present invention can be widely applied to a developing machine for developing the glass substrate 21 for a display device.
また、 最表面層を形成する方法はイオンプレーティング法に限定されるもので はなく、 例えばゾルゲル法、 プラズマ容射法、 スパッタリング法、 真空蒸着法、 C V D法など、 種々の方法で成膜することができる。 産業上の利用可能性  Also, the method of forming the outermost surface layer is not limited to the ion plating method, and is formed by various methods such as a sol-gel method, a plasma spray method, a sputtering method, a vacuum evaporation method, a CVD method, and the like. be able to. Industrial applicability
以上のように、 本発明によれば、 基板保持装置の表示装置用ガラス基板と接触 する最表面を表示装置用ガラス基板と同じガラス質としたので、 接触や剥離によ る静電気の発生は抑制され、 表示装置用ガラス基板の帯電を防止または抑制でき る。 このため、 放電などによる表示装置用ガラス基板の不良の発生を抑制するこ とができる。  As described above, according to the present invention, since the outermost surface of the substrate holding device that comes into contact with the display glass substrate is made of the same glass as the display glass substrate, generation of static electricity due to contact and separation is suppressed. As a result, the charging of the glass substrate for a display device can be prevented or suppressed. For this reason, it is possible to suppress the occurrence of defects of the glass substrate for a display device due to discharge or the like.
また、 本発明によれば、 基板保持装置の表示装置用ガラス基板と接触する最表 面を表示装置用ガラス基板と組成の近い酸化珪素としたので、 接触や剥離による 静電気の発生は抑制され、表示装置用ガラス基板の帯電を防止または抑制できる。 このため、 放電などによる表示装置用ガラス基板の不良の発生を抑制することが できる。 また、 最表面層は酸化珪素皮膜なので、 成膜は容易で、 基板保持装置の 安定した作製が可能となる。  Further, according to the present invention, since the outermost surface of the substrate holding device that is in contact with the display device glass substrate is made of silicon oxide having a composition close to that of the display device glass substrate, the generation of static electricity due to contact or separation is suppressed, The electrification of the glass substrate for a display device can be prevented or suppressed. For this reason, it is possible to suppress occurrence of defects of the glass substrate for a display device due to discharge or the like. In addition, since the outermost layer is a silicon oxide film, film formation is easy, and stable production of a substrate holding device is possible.

Claims

請 求 の 範 囲 The scope of the claims
1 . 基板を保持する基板保持装置において、 前記基板と帯電列上で同じまたは近 傍の位置の材質で前記基板を保持する基板保持部を備えたことを特徴とする基板 保持装置。 1. A substrate holding device for holding a substrate, comprising: a substrate holding portion for holding the substrate with a material at the same or nearby position on the charging row as the substrate.
2 . 請求項 1記載の基板保持装置において、 前記基板はガラス基板であり、 前記 基板保持部の前記基板と接触する表面はガラス質であることを特徴とする基板保  2. The substrate holding device according to claim 1, wherein the substrate is a glass substrate, and a surface of the substrate holding portion that contacts the substrate is glassy.
3 . 請求項 1記載の基板保持装置において、 前記基板はガラス基板であり、 前記 基板保持部の前記基板と接触する表面を酸化珪素皮膜で覆つたことを特徴とする 基板保持装置。 3. The substrate holding device according to claim 1, wherein the substrate is a glass substrate, and a surface of the substrate holding portion that contacts the substrate is covered with a silicon oxide film.
4 . 請求項 1記載の基板保持装置において、 前記基板はガラス基板であり、 前記 基板保持部はアルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 前記陽極酸化皮膜上の前記基板と接触する部分に酸化珪素皮 膜を形成したことを特徴とする基板保持装置。  4. The substrate holding device according to claim 1, wherein the substrate is a glass substrate, the substrate holding portion is made of a material containing aluminum as a base material, and a black anodic oxide film is formed on a surface of the base material; A substrate holding device, wherein a silicon oxide film is formed on a portion of the anodic oxide film that contacts the substrate.
5 . 請求項 1記載の基板保持装置において、 前記基板はガラス基板であり、 前記 基板保持部はアルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 その上に中間層を形成し、 前記中間層上の前記基板と接触す る部分に酸化珪素皮膜を形成したことを特徴とする基板保持装置。  5. The substrate holding device according to claim 1, wherein the substrate is a glass substrate, the substrate holding portion is made of a material containing aluminum as a base material, and a black anodic oxide film is formed on a surface of the base material. A substrate holding device, wherein an intermediate layer is formed thereon, and a silicon oxide film is formed on a portion of the intermediate layer that contacts the substrate.
6 . 請求項 1記載の基板保持装置において、 前記基板はガラス基板であり、 前記 基板保持部はアルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 その上に S i 、 C r、 T iのいずれかよりなる中間層を形成 し、 前記中間層上の前記基板と接触する部分に酸化珪素皮膜を形成したことを特 徴とする基板保持装置。  6. The substrate holding device according to claim 1, wherein the substrate is a glass substrate, the substrate holding portion is made of a material containing aluminum as a base material, and a black anodic oxide film is formed on a surface of the base material. A substrate holding device, wherein an intermediate layer made of any one of Si, Cr, and Ti is formed thereon, and a silicon oxide film is formed on a portion of the intermediate layer that contacts the substrate.
7 . 請求項 1記載の基板保持装置において、 前記基板はガラス基板であり、 前記 基板保持部はアルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 その上に S i 、 C r、 T iのいずれかよりなる厚みが 1 0 n m以下の中間層を形成し、 前記中間層上の前記基板と接触する部分に酸化珪素皮 膜を形成したことを特徴とする基板保持装置。 7. The substrate holding device according to claim 1, wherein the substrate is a glass substrate, the substrate holding portion is made of a material containing aluminum as a base material, and a black anodic oxide film is formed on a surface of the base material. An intermediate layer made of any one of Si, Cr, and Ti having a thickness of 10 nm or less is formed thereon, and a silicon oxide coating is formed on a portion of the intermediate layer that contacts the substrate. A substrate holding device having a film formed thereon.
8 . 請求項 1記載の基板保持装置において、 前記基板はデバイス回路パターンが 形成された表示装置用ガラス基板であることを特徴とする基板保持装置。  8. The substrate holding device according to claim 1, wherein the substrate is a glass substrate for a display device on which a device circuit pattern is formed.
9 . 基板を保持する基板保持装置において、 前記基板と同じ組成または近い組成 の材質で前記基板を保持することを特徴とする基板保持装置。  9. A substrate holding device for holding a substrate, wherein the substrate is held with a material having the same composition or a similar composition as the substrate.
1 0 . 基板を保持する基板保持方法において、 前記基板と同じ組成または近い組 成の材質で前記基板を保持することを特徴とする基板保持方法。  10. A substrate holding method for holding a substrate, wherein the substrate is held with a material having the same composition or a similar composition as that of the substrate.
1 1 . 請求項 1 0記載の基板保持方法において、 前記基板はガラス基板であり、 前記基板にガラス質の表面を接触させて前記基板を保持することを特徴とする基 板保持方法。  11. The substrate holding method according to claim 10, wherein the substrate is a glass substrate, and the substrate is held by bringing a vitreous surface into contact with the substrate.
1 2 . 請求項 1 0記載の基板保持方法において、 前記基板はガラス基板であり、 前記基板に酸化珪素皮膜で覆つた表面を接触させて前記基板を保持することを特 徴とする基板保持方法。  12. The substrate holding method according to claim 10, wherein the substrate is a glass substrate, and the substrate is held by bringing a surface covered with a silicon oxide film into contact with the substrate. .
1 3 . 請求項 1 0記載の基板保持方法において、 前記基板はガラス基板であり、 前記基板に、 アルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 前記陽極酸化皮膜上に酸化珪素皮膜を形成した基板保持部材 を接触させて前記基板を保持することを特徴とする基板保持方法。  13. The substrate holding method according to claim 10, wherein the substrate is a glass substrate, the substrate is made of a material containing aluminum as a base material, and a black anodic oxide film is formed on a surface of the base material. A substrate holding method, wherein the substrate is held by contacting a substrate holding member having a silicon oxide film formed on the anodic oxide film.
1 4 . 請求項 1 0記載の基板保持方法において、 前記基板はガラス基板であり、 前記基板に、 アルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 前記陽極酸化皮膜上に中間層を形成し、 前記中間層上に酸化 珪素皮膜を形成した基板保持部材を接触させて前記基板を保持することを特徴と する基板保持方法。  14. The substrate holding method according to claim 10, wherein the substrate is a glass substrate, the substrate is made of a material containing aluminum as a base material, and a black anodic oxide film is formed on a surface of the base material. A substrate holding method, comprising: forming an intermediate layer on the anodic oxide film; and holding the substrate by contacting a substrate holding member having a silicon oxide film formed on the intermediate layer.
1 5 . 請求項 1 0記載の基板保持方法において、 前記基板はガラス基板であり、 前記基板に、 アルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 前記陽極酸化皮膜上に S i 、 C r、 T iのいずれかよりなる 中間層を形成し、 前記中間層上に酸化珪素皮膜を形成した基板保持部材を接触さ せて前記基板を保持することを特徴とする基板保持方法。  15. The substrate holding method according to claim 10, wherein the substrate is a glass substrate, the substrate is made of a material containing aluminum as a base material, and a black anodic oxide film is formed on a surface of the base material. Forming an intermediate layer made of any of Si, Cr and Ti on the anodic oxide film, and holding the substrate by contacting a substrate holding member having a silicon oxide film formed on the intermediate layer; A substrate holding method characterized by the above-mentioned.
1 6 . 請求項 1 0記載の基板保持方法において、 前記基板はガラス基板であり、 前記基板に、 アルミニウムを含む材料を母材とし、 前記母材の表面に黒色の陽極 酸化皮膜を形成し、 前記陽極酸化皮膜上に S i 、 C r、 T iのいずれかよりなる 厚みが 1 0 n m以下の中間層を形成し、 前記中間層上に酸化珪素皮膜を形成した 基板保持部材を接触させて前記基板を保持することを特徴とする基板保持方法。16. The substrate holding method according to claim 10, wherein the substrate is a glass substrate, A material containing aluminum is used as a base material on the substrate, a black anodic oxide film is formed on the surface of the base material, and a thickness of one of Si, Cr, and Ti on the anodic oxide film is 1 A substrate holding method, comprising: forming an intermediate layer having a thickness of 0 nm or less, and contacting a substrate holding member having a silicon oxide film formed on the intermediate layer, to hold the substrate.
1 7 . 請求項 1 0記載の基板保持方法において、 前記基板はデバイス回路パター ンが形成された表示装置用ガラス基板であることを特徴とする基板保持方法。17. The substrate holding method according to claim 10, wherein the substrate is a glass substrate for a display device on which a device circuit pattern is formed.
1 8 . 基板にパターンを露光する露光装置において、 前記基板と同じ組成または 近い組成の材質で前記基板を保持する基板保持部と、 前記パターンを前記基板に 露光する露光部とを備えることを特徴とする露光装置。 18. An exposure apparatus for exposing a pattern on a substrate, comprising: a substrate holding unit for holding the substrate with a material having the same composition as or close to the substrate; and an exposure unit for exposing the pattern to the substrate. Exposure apparatus.
1 9 . 請求項 1 8記載の露光装置において、 前記露光装置は前記基板を移動させ ている間に前記基板にパターンを露光することを特徴とする露光装置。  19. The exposure apparatus according to claim 18, wherein the exposure apparatus exposes a pattern on the substrate while moving the substrate.
2 0 . 請求項 1 8記載の露光装置において、 前記基板保持部は水平方向に沿って 前記基板を保持することを特徴とする露光装置。  20. The exposure apparatus according to claim 18, wherein the substrate holding section holds the substrate along a horizontal direction.
PCT/JP1998/004053 1997-12-01 1998-09-09 Substrate-holding device, substrate-holding method and exposure device WO1999028219A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU90009/98A AU9000998A (en) 1997-12-01 1998-09-09 Substrate-holding device, substrate-holding method and exposure device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34580497 1997-12-01
JP9/345804 1997-12-01

Publications (1)

Publication Number Publication Date
WO1999028219A1 true WO1999028219A1 (en) 1999-06-10

Family

ID=18379104

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/004053 WO1999028219A1 (en) 1997-12-01 1998-09-09 Substrate-holding device, substrate-holding method and exposure device

Country Status (3)

Country Link
AU (1) AU9000998A (en)
TW (1) TW434463B (en)
WO (1) WO1999028219A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4071522A4 (en) * 2019-12-02 2023-05-31 Nippon Light Metal Co., Ltd. Optical member and production method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0737962A (en) * 1993-07-20 1995-02-07 Tokyo Ohka Kogyo Co Ltd Transfering apparatus and conveying apparatus for substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0737962A (en) * 1993-07-20 1995-02-07 Tokyo Ohka Kogyo Co Ltd Transfering apparatus and conveying apparatus for substrate

Also Published As

Publication number Publication date
TW434463B (en) 2001-05-16
AU9000998A (en) 1999-06-16

Similar Documents

Publication Publication Date Title
US6307620B1 (en) Substrate holding apparatus, substrate transfer system, exposure apparatus, coating apparatus, method for making a device, and method for cleaning a substrate holding section
JP2012089837A (en) Glass substrate holding means
US20090109595A1 (en) Method and system for performing electrostatic chuck clamping in track lithography tools
US20100081097A1 (en) Substrate processing apparatus
JP2012111985A (en) Vapor deposition mask and thin film pattern-forming method using the same
JP4799172B2 (en) Exposure apparatus, exposure method, and manufacturing method of display panel substrate
JP2002246450A (en) Substrate-holding device and substrate-transfer method
JP2007171723A (en) Exposure device, exposing method, and manufacturing method for panel substrate for display
KR20010043965A (en) Pedestal insulator for a pre-clean chamber
JP2006120889A (en) Manufacturing method of semiconductor device and semiconductor wafer holder for use in method
WO1999028219A1 (en) Substrate-holding device, substrate-holding method and exposure device
CN102652349A (en) Liquid immersion member, method for manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
JP3233496B2 (en) Vacuum deposition equipment
JP7021318B2 (en) Film forming equipment and control method of film forming equipment
JP2013205709A (en) Exposure device
JP5320552B2 (en) Proximity exposure apparatus, mask holding method of proximity exposure apparatus, and display panel substrate manufacturing method
JP2002158277A (en) Substrate holder, substrate carrier arm, aligner and substrate aligner
JP5334674B2 (en) Proximity exposure apparatus, mask mounting method for proximity exposure apparatus, and display panel substrate manufacturing method
JPH07169675A (en) Substrate material for electron beam lithography
JP4099328B2 (en) Method for preventing particle generation in sputtering apparatus, sputtering method, sputtering apparatus, and covering member
JP5371859B2 (en) Proximity exposure apparatus, substrate support method for proximity exposure apparatus, and display panel substrate manufacturing method
JP3007009B2 (en) Rotary substrate processing equipment
JPS60249329A (en) Spatter etching mechanism in vacuum treatment unit
JP6956244B2 (en) Film formation equipment and film formation method
JP2010176079A (en) Proximity exposure apparatus, method for protecting mask in proximity exposure apparatus, and method for manufacturing display panel substrate

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IS JP KE KG KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: KR

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA