WO1999016127A1 - Electronic component with improved housing moulding material - Google Patents

Electronic component with improved housing moulding material Download PDF

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Publication number
WO1999016127A1
WO1999016127A1 PCT/DE1998/002675 DE9802675W WO9916127A1 WO 1999016127 A1 WO1999016127 A1 WO 1999016127A1 DE 9802675 W DE9802675 W DE 9802675W WO 9916127 A1 WO9916127 A1 WO 9916127A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
electronic component
molding compound
protective layer
polybenzoxazole
Prior art date
Application number
PCT/DE1998/002675
Other languages
German (de)
French (fr)
Inventor
Bernhard SCHÄTZLER
Bernd Rakow
Christl Niederle
Recai Sezi
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO1999016127A1 publication Critical patent/WO1999016127A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to an electronic component with a semiconductor chip which is surrounded together with connection elements by a housing made of molding compound, the semiconductor chip having a protective layer on at least one side.
  • a critical area within an electronic component is the zone at which a passivation layer on the semiconductor chip meets the surrounding plastic mass that represents the component housing. In this zone there should be optimal adhesion between the different layers, as very high mechanical stresses can occur here. The greatest stresses occur, for example, at the chip edges. Damage to the semiconductor components can occur as a result of breakage, deletion, bending or tearing off of bond wires and corrosion.
  • a fully structured semiconductor chip has a first passivation layer which consists of an inorganic material. This can be silicon nitride, for example. Additional passivation layers have now been applied to control the mechanical stresses mentioned or to compensate for them.
  • Polyimide can be processed relatively well and has a buffering effect due to its relatively elastic properties.
  • the loads to be borne in connection with an electronic component without functional failure are laid down in various standards.
  • the categories to be found there, for example for functionality when used in a humid environment and subsequent soldering simulation in connection with various temperature changes, are each linked to different stress tests that electronic components have to withstand before they can be offered with the appropriate classification. Depending on the level, such a classification indicates how long such a component can be stored without dry packaging. This information is necessary for the following reasons.
  • the molding compound absorbs moisture, which then deposits in particular at the interface with the semiconductor chip.
  • the component When installing the component, it is usually attached to a circuit board by means of a soldering process.
  • the component is heated to a considerable extent, which then leads to tension not only due to different coefficients of thermal expansion, but also to an internal pressure due to vapor pressure, which emanates from the moisture that has penetrated into the component. This internal pressure can lead to component cracks or the so-called popcorn effect.
  • the invention is therefore based on the object of further optimizing the adhesion between the molding compound and the chip passivation layer that is necessary in an electronic component with a plastic housing.
  • an electronic component with a semiconductor chip is provided, which, together with connection elements, is surrounded by a housing made of molding compound.
  • the semiconductor chip has a protective layer on at least one side, this protective layer made of polybenzoxazole
  • PBO PBO
  • This PBO layer thus replaces the previously customary polyimide and now serves as a buffer layer between the semiconductor chip, which has a silicon nitride layer on its surface, for example, and the molding compound.
  • Biphenyl is also used as the molding compound.
  • the base (epoxy) resin is based on a biphenyl structure. This is characterized by a high filler content, low water absorption and a low glass transfer temperature (Tg).
  • Tg glass transfer temperature
  • At least one surface of the semiconductor chip namely the side that does not rest on a supporting part, is provided with the protective layer made of PBO.
  • a manufacturing process for. the electronic component described is provided in such a way that the semiconductor chip has the protective layer made of polybenzoxazole on at least one side is provided.
  • the easiest way to do this is while the semiconductor chip is part of a wafer.
  • the semiconductor chip is then separated and suitably arranged in a lead frame, the so-called lead frame. This is followed by the connection between contact areas, the so-called pads, of the semiconductor chip and connection contacts of the component, the leads.
  • the electronic component preassembled in this way is then surrounded by the molding compound, biphenyl molding compound preferably being used. After the molding compound has hardened, it is generally still necessary to remove connecting webs between the individual external contacts or leads, as a result of which a single electronic component is created.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention relates to an electronic component with a semiconductor chip. Said chip and the connections elements are surrounded by a housing made of a molding material. The semiconductor chip has a protective layer at least on one side, said layer being made of polybenzoxazole.

Description

Beschreibungdescription
Elektronisches Bauteil mit verbesserter GehäusepreßmasseElectronic component with improved housing molding compound
Die Erfindung betrifft ein elektronisches Bauteil mit einem Halbleiter-Chip, der zusammen mit Anschlußelementen von einem Gehäuse aus Preßmasse umgeben ist, wobei der Halbleiter-Chip zumindest auf einer Seite eine Schutzschicht aufweist.The invention relates to an electronic component with a semiconductor chip which is surrounded together with connection elements by a housing made of molding compound, the semiconductor chip having a protective layer on at least one side.
Bei der Weiterentwicklung von elektronischen Bauelementen mit einem Kunststoffgehäuse, das den Halbleiter-Chip und elektronische Anschlüsse aufnimmt, ergeben sich aufgrund verschiedener Längen- oder Volumenausdehnungskoeffizienten von verschiedenen darin enthaltenen Materialien regelmäßig Probleme. Um die elektronischen Bauelemente zu testen, werden sie verschiedenen Temperatur- und Temperaturwechselbelastungen ausgesetzt und mit Feuchtigkeit beaufschlagt. Ein kritischer Bereich innerhalb eines elektronischen Bauelementes ist die Zone, an der eine Passivierungsschicht auf dem Halbleiter-Chip mit der umgebenden das Bauelementgehäuse darstellenden Kunst- stoffmasse zusammentrifft. In dieser Zone sollte eine optimale Haftung zwischen den verschiedenen Schichten vorliegen, da hier sehr große mechanische Spannungen auftreten können. Die größten Spannungen treten beispielsweise an den Chipkanten auf. Beschädigungen der Halbleiterbauelemente können durch Brüche, Deliminationen, Verbiegung oder durch Abreißen von Bonddrähten sowie Korrosion auftreten.In the further development of electronic components with a plastic housing that accommodates the semiconductor chip and electronic connections, problems regularly arise due to different coefficients of length or volume of different materials contained therein. In order to test the electronic components, they are exposed to various temperature and temperature changes and exposed to moisture. A critical area within an electronic component is the zone at which a passivation layer on the semiconductor chip meets the surrounding plastic mass that represents the component housing. In this zone there should be optimal adhesion between the different layers, as very high mechanical stresses can occur here. The greatest stresses occur, for example, at the chip edges. Damage to the semiconductor components can occur as a result of breakage, deletion, bending or tearing off of bond wires and corrosion.
Ein fertig strukturierter Halbleiter-Chip weist fast aus- nahmslos eine erste Passivierungsschicht auf, die aus einem anorganischen Material besteht. Dies kann beispielsweise Siliziumnitrid sein. Zur Beherrschung der genannten mechanischen Spannungen bzw. zum Ausgleich derselben werden mittlerweile zusätzliche Passivierungsschichten darüber aufgetragen. Polyimid kann relativ gut verarbeitet werden und weist aufgrund seiner relativ elastischen Eigenschaften eine puffernde Wirkung auf. Die im Zusammenhang mit einem elektronischen Bauelement ohne Funktionsausfall zu ertragenden Belastungen sind in verschiedenen Normen niedergelegt. Die dort zu findenden Kategorien, beispielsweise für die Funktionsfähigkeit beim Einsatz in einer feuchten Umgebung und anschließende Lötsimulation in Verbindung mit verschiedenen Temperaturwechselbelastungen, sind jeweils verknüpft mit unterschiedlichen Belastungstests, die elektronische Bauelemente für den Betrieb überstehen müssen, bevor sie mit der entsprechenden Klassifizierung angeboten werden. Eine derartige Klassifizierung gibt je nach Level an, wie lange ein solches Bauelement ohne Trockenverpackung gelagert werden kann. Diese Angabe ist aus den folgenden Gründen notwendig.Almost without exception, a fully structured semiconductor chip has a first passivation layer which consists of an inorganic material. This can be silicon nitride, for example. Additional passivation layers have now been applied to control the mechanical stresses mentioned or to compensate for them. Polyimide can be processed relatively well and has a buffering effect due to its relatively elastic properties. The loads to be borne in connection with an electronic component without functional failure are laid down in various standards. The categories to be found there, for example for functionality when used in a humid environment and subsequent soldering simulation in connection with various temperature changes, are each linked to different stress tests that electronic components have to withstand before they can be offered with the appropriate classification. Depending on the level, such a classification indicates how long such a component can be stored without dry packaging. This information is necessary for the following reasons.
Die Preßmasse nimmt mit der Zeit Feuchtigkeit auf, die sich dann insbesondere an der Grenzfläche zum Halbleiter-Chip ablagert. Beim Einbau des Bauelementes wird dieses in der Regel mittels eines Lötverfahrens auf einer Leiterplatte befestigt. Dabei wird das Bauelement in erheblichem Maße erhitzt, wobei es dann nicht nur zu Verspannungen durch unterschiedliche Wärmeausdehnungskoeffizienten kommt, sondern ebenfalls durch Dampfdruck, der von der in das Bauteil eingedrungenen Feuchtigkeit ausgeht, zu einem Innendruck. Dieser Innendruck kann zu Bauteil-Cracks bzw. dem sogenannten Popcorn-Effekt führen.Over time, the molding compound absorbs moisture, which then deposits in particular at the interface with the semiconductor chip. When installing the component, it is usually attached to a circuit board by means of a soldering process. The component is heated to a considerable extent, which then leads to tension not only due to different coefficients of thermal expansion, but also to an internal pressure due to vapor pressure, which emanates from the moisture that has penetrated into the component. This internal pressure can lead to component cracks or the so-called popcorn effect.
Der Erfindung liegt daher die Aufgabe zugrunde, die in einem elektronischen Bauelement mit Kunststoffgehäuse notwendige Haftung zwischen Preßmasse und Chip-Passivierungsschicht wei- ter zu optimieren.The invention is therefore based on the object of further optimizing the adhesion between the molding compound and the chip passivation layer that is necessary in an electronic component with a plastic housing.
Die Lösung dieser Aufgabe erfolgt erfindungsgemäß durch die im Patentanspruch 1 angegebenen Maßnahmen.This object is achieved according to the invention by the measures specified in claim 1.
Weitere vorteilhafte Ausgestaltungen sind in den Unteransprüchen angegeben. Erfindungsgemäß ist ein elektronisches Bauteil mit einem Halbleiter-Chip vorgesehen, der zusammen mit Anschlußelemen- ten von einem Gehäuse aus Preßmasse umgeben ist. Dabei weist der Halbleiter-Chip zumindest auf einer Seite eine Schutz- schicht auf, wobei diese Schutzschicht aus PolybenzoxazolFurther advantageous refinements are specified in the subclaims. According to the invention, an electronic component with a semiconductor chip is provided, which, together with connection elements, is surrounded by a housing made of molding compound. The semiconductor chip has a protective layer on at least one side, this protective layer made of polybenzoxazole
(PBO) besteht. Diese PBO-Schicht ersetzt somit das bisher übliche Polyimid und dient nunmehr als Pufferschicht zwischen dem Halbleiter-Chip, der beispielsweise an seiner Oberfläche eine Siliziumnitridschicht aufweist, und der Preßmasse. Wei- terhin wird als Preßmasse Biphenyl verwendet.(PBO) exists. This PBO layer thus replaces the previously customary polyimide and now serves as a buffer layer between the semiconductor chip, which has a silicon nitride layer on its surface, for example, and the molding compound. Biphenyl is also used as the molding compound.
Hierbei baut das Basis (-Epoxid-) harz auf einer Biphenylstruk- tur auf. Diese zeichnet sich durch hohen Füllstoffgehalt, geringe Wasseraufnahme und eine niedrige Glasübertragungstempe- ratur (Tg) aus. Bei dieser Preßmasse hat sich herausgestellt, daß es nunmehr möglich ist, im Zusammenhang mit der PBO- Schicht zu erreichen, daß derartige Bauteile minimal 168 h bis 1 Jahr unverpackt vor der Verarbeitung mittels Lötverfahren in normaler Umgebung aufbewahrt werden können. Eine der- artige Eigenschaft ermöglicht es, daß zukünftig eventuell ganz auf eine Trockenverpackung verzichtet werden kann. Die Versuche haben gezeigt, daß nur bei der Verwendung einer PBO- Schicht als Pufferschicht in Verbindung mit Biphenyl als Preßmasse ein Bauteil erhältlich ist, das auch nach einem Test im Dampfdrucktopf, dem sogenannten Pressure-Cooker-Test nach 500 Stunden keinerlei Deliminationen der Grenzschicht zwischen dem Halbleiter-Chip und der Preßmasse auftreten. Die Biphenylpreßmasse hingegen weist im Vergleich mit bisher üblichen Preßmassen eine deutlich geringere Wasseraufnahme auf.The base (epoxy) resin is based on a biphenyl structure. This is characterized by a high filler content, low water absorption and a low glass transfer temperature (Tg). With this molding compound, it has been found that it is now possible to achieve in connection with the PBO layer that such components can be stored in a normal environment for at least 168 h to 1 year before being processed by means of soldering processes. Such a property enables dry packaging to be dispensed with entirely in the future. The experiments have shown that only when a PBO layer is used as a buffer layer in conjunction with biphenyl as a molding compound is a component available which, after a test in a steam pressure pot, the so-called pressure cooker test, does not remove any delimitations of the boundary layer between 500 hours the semiconductor chip and the molding compound occur. The biphenyl molding compound, on the other hand, has a significantly lower water absorption in comparison with molding compounds which have been customary to date.
In vorteilhafter Weise wird mindestens eine Oberfläche des Halbleiter-Chips, nämlich die Seite die nicht auf einem Trageteil ruht, mit der Schutzschicht aus PBO versehen.Advantageously, at least one surface of the semiconductor chip, namely the side that does not rest on a supporting part, is provided with the protective layer made of PBO.
Ein Herstellungsverfahren für. das beschriebene elektronische Bauteil ist derart vorgesehen, daß der Halbleiter-Chip zumindest auf einer Seite mit der Schutzschicht aus Polybenzoxazol versehen ist. Dies geschieht am einfachsten noch solange, wie der Halbleiter-Chip als Teil eines Wafers besteht. Anschließend wird der Halbleiter-Chip vereinzelt und in einem Systemträger, dem sogenannten Leadframe in geeigneter Weise angeordnet. Danach erfolgt die Verbindung zwischen Kontaktflächen, den sogenannten Pads, des Halbleiter-Chips und Anschlußkontakten des Bauteils, den Leads. Anschließend wird das derart vormontierte elektronische Bauteil von der Preßmasse umgeben, wobei bevorzugt Biphenylpreßmasse verwendbar ist. Nach dem Aushärten der Preßmasse ist es schließlich in der Regel noch notwendig Verbindungsstege zwischen den einzelnen Außenkontakten bzw. Leads zu entfernen, wodurch ein einzelnes elektronisches Bauteil entsteht. A manufacturing process for. the electronic component described is provided in such a way that the semiconductor chip has the protective layer made of polybenzoxazole on at least one side is provided. The easiest way to do this is while the semiconductor chip is part of a wafer. The semiconductor chip is then separated and suitably arranged in a lead frame, the so-called lead frame. This is followed by the connection between contact areas, the so-called pads, of the semiconductor chip and connection contacts of the component, the leads. The electronic component preassembled in this way is then surrounded by the molding compound, biphenyl molding compound preferably being used. After the molding compound has hardened, it is generally still necessary to remove connecting webs between the individual external contacts or leads, as a result of which a single electronic component is created.

Claims

Patentansprüche claims
1. Elektronisches Bauteil mit einem Halbleiter-Chip, der zusammen mit Anschlußelementen von einem Gehäuse aus Preßmasse umgeben ist, wobei der Halbleiter-Chip zumindest auf einer Seite eine Schutzschicht aufweist, d a d u r c h g e k e n n z e i c h n e t , daß die Schutzschicht aus Polybenzoxazol und daß die Preßmasse, aus der das Gehäuse besteht, aus Biphenyl besteht.1. Electronic component with a semiconductor chip, which is surrounded together with connection elements by a housing made of molding compound, the semiconductor chip having at least on one side a protective layer, characterized in that the protective layer made of polybenzoxazole and that the molding compound from which the Housing consists of biphenyl.
2. Bauteil nach Anspruch 1, d a d u r c h g e k e n n z e i c h n e t , daß der Chip auf einem Systemträger befestigt ist, wobei die Schutzschicht aus Polybenzoxazol auf einer Seite des Halblei- ter-Chip angeordnet ist, die vom Trageteil abgewandt ist.2. Component according to claim 1, so that the chip is fastened on a system carrier, wherein the protective layer made of polybenzoxazole is arranged on one side of the semiconductor chip that faces away from the supporting part.
3. Verfahren zum Herstellen eines elektronischen Bauteils nach Anspruch 1, bei dem:3. A method of manufacturing an electronic component according to claim 1, wherein:
- ein Halbleiter-Chip mit Anschlußelementen verbunden wird, - auf zumindest einer Seite des Halbleiter-Chip eine Schutzschicht aus Polybenzoxazol aufgetragen wird, unda semiconductor chip is connected to connection elements, a protective layer of polybenzoxazole is applied to at least one side of the semiconductor chip, and
- der Halbleiter-Chip und Abschnitte der Anschlußelemente von einer Preßmasse umgeben wird und bei dem eine Biphenylpreßmasse für das Gehäuse verwendet wird.- The semiconductor chip and sections of the connection elements are surrounded by a molding compound and in which a biphenyl molding compound is used for the housing.
4. Verfahren nach Anspruch 3, bei dem der Halbleiter-Chip auf einem Systemträger befestigt wird, bevor auf einer Seite, die vom Systemträger abgewandt ist, die Schutzschicht aus Polybenzoxazol aufgetragen wird. 4. The method according to claim 3, wherein the semiconductor chip is attached to a leadframe before the protective layer made of polybenzoxazole is applied to a side facing away from the leadframe.
PCT/DE1998/002675 1997-09-19 1998-09-09 Electronic component with improved housing moulding material WO1999016127A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19741437.0 1997-09-19
DE1997141437 DE19741437A1 (en) 1997-09-19 1997-09-19 Electronic component with improved housing molding compound

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1014444A1 (en) * 1999-05-14 2000-06-28 Siemens Aktiengesellschaft Integrated circuit with protection layer and fabrication method therefor
DE102004029586A1 (en) * 2004-06-18 2006-01-12 Infineon Technologies Ag Substrate based package device with a semiconductor chip

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DE2322347A1 (en) * 1973-05-03 1974-11-14 Siemens Ag Semiconductor element with protective insulating layer - formed from aromatic nitrogeneous polymer, esp. poly-maleimide or poly-hydrantoin
GB2098800A (en) * 1981-05-18 1982-11-24 Hitachi Ltd Resin encapsulated semiconductor devices
EP0291778A1 (en) * 1987-05-18 1988-11-23 Siemens Aktiengesellschaft Process for the preparation of high temperature-resistant dielectrics
US5287003A (en) * 1991-02-26 1994-02-15 U.S. Philips Corporation Resin-encapsulated semiconductor device having a passivation reinforcement hard polyimide film
EP0589143A2 (en) * 1992-09-21 1994-03-30 Sumitomo Bakelite Company Limited Epoxy resin composition based on diglycidylether of biphenyldiol
EP0733665A1 (en) * 1995-03-23 1996-09-25 Siemens Aktiengesellschaft Process for the preparation of polybenzoxazol precursors and their corresponding resist solutions

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DE2019099C3 (en) * 1970-04-21 1975-11-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Process for the production of a stable surface protection for semiconductor components
EP0291779B1 (en) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Heat-resistant positive resist, and process for the production of heat-resistant resist patterns
KR950011902B1 (en) * 1990-04-04 1995-10-12 도오레 가부시끼가이샤 Epoxy resin composition for encapsulating semiconductor device
DE4040822A1 (en) * 1990-12-20 1992-07-02 Bosch Gmbh Robert Depositing protective layers on mounted chips - sets chip eccentrically on turntable and partly centrifuges protective layer for uniform distribution

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2322347A1 (en) * 1973-05-03 1974-11-14 Siemens Ag Semiconductor element with protective insulating layer - formed from aromatic nitrogeneous polymer, esp. poly-maleimide or poly-hydrantoin
GB2098800A (en) * 1981-05-18 1982-11-24 Hitachi Ltd Resin encapsulated semiconductor devices
EP0291778A1 (en) * 1987-05-18 1988-11-23 Siemens Aktiengesellschaft Process for the preparation of high temperature-resistant dielectrics
US4965134A (en) * 1987-05-18 1990-10-23 Siemens Aktiengesellschaft Method for manufacturing highly heat-resistant dielectrics
US5287003A (en) * 1991-02-26 1994-02-15 U.S. Philips Corporation Resin-encapsulated semiconductor device having a passivation reinforcement hard polyimide film
EP0589143A2 (en) * 1992-09-21 1994-03-30 Sumitomo Bakelite Company Limited Epoxy resin composition based on diglycidylether of biphenyldiol
EP0733665A1 (en) * 1995-03-23 1996-09-25 Siemens Aktiengesellschaft Process for the preparation of polybenzoxazol precursors and their corresponding resist solutions

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