WO1999014790A1 - Resistive heating of power coil to reduce transient heating/start up effects - Google Patents
Resistive heating of power coil to reduce transient heating/start up effects Download PDFInfo
- Publication number
- WO1999014790A1 WO1999014790A1 PCT/US1998/019165 US9819165W WO9914790A1 WO 1999014790 A1 WO1999014790 A1 WO 1999014790A1 US 9819165 W US9819165 W US 9819165W WO 9914790 A1 WO9914790 A1 WO 9914790A1
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- WO
- WIPO (PCT)
- Prior art keywords
- coil
- current
- plasma
- chamber
- pressure
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Definitions
- the present invention relates to apparatus and methods for processing semiconductor wafers or other semiconductor workpieces, in a chamber containing a plasma created to ionize a deposition material or etch a workpiece.
- Certain semiconductor device fabrication procedures include processes in which a material is sputtered from a target onto a workpiece, such as a semiconductor wafer or a group of semiconductor wafers, in the presence of a plasma that ionizes the sputtered material. Material is sputtered from the target, which is appropriately biased, by the impact of ions created in the vicinity of the target.
- the workpiece is mounted on a support and may be biased to a potential selected to attract the sputtered, ionized material to the workpiece.
- the sputtered material once ionized is composed of positive ions and the workpiece is negatively biased.
- ICP inductively coupled plasma
- RF current passing through a coil which is located within the chamber induces electromagnetic currents in the plasma. These currents heat the conducting plasma by ohmic heating, so that it is sustained in steady state.
- current through a coil is supplied by an RF generator coupled to the coil through an impedance matching network, such that the coil acts as the first windings of a transformer.
- the plasma acts as a single turn second winding of a transformer.
- the center thick tendency for material sputtered from the primary target can be compensated by the edge thick tendency for material sputtered from the coil As a result, uniformity can be improved.
- a more specific object of the invention is to assure satisfactory processing of all workpieces following startup of such apparatus without unnecessary loss of valuable wafers, consumption of sputtering material and without shortening the useful life of the apparatus.
- a DC power source may be used to apply current to the coil to heat the coil to at least its equilibrium temperature.
- the duration of the resistive heating operation can be determined by preliminary measurement of the time required for the coil to reach its equilibrium temperature in the vacuum chamber. Then, at the time of startup of the apparatus for performing a sputtering operation, the coil may be resistively heated for this measured period of time.
- the coil may be resistively heated by a suitable heating current until it reaches a temperature at which it begins to radiate a substantial amount of infrared energy. At this coil temperature, it is believed that the equilibrium will be reached in which the emitted radiation will automatically balance the resistive heating energy supplied to the coil so that its temperature will remain constant at a value somewhat above the above-mentioned equilibrium temperature associated with the sputtering procedure. If the resistive heating current is than replaced by the RF current which to be employed for inductively coupled plasma generation, the coil can cool relatively quickly to the sputtering equilibrium temperature.
- sputtering is preferably prevented from occurring in the chamber during startup heating of the coil by preventing a plasma from being created until the coil has reached its equilibrium temperature, or possibly its radiation temperature.
- Plasma creation may be prevented by effecting the resistive heating with either a DC current or an ac current at a frequency below that which will ignite a plasma, or by maintaining the atmosphere in the chamber at a sufficiently low pressure, of the order of milliTorrs, to prevent plasma ignition regardless of the magnitude and frequency of the heating current applied to the coil.
- Figure 1 is a schematic diagram of a preferred embodiment of apparatus for implementing the present invention.
- Figure 2 is a circuit diagram of a part of a modified form of construction of the embodiment of Figure 1.
- Figure 3 is a schematic diagram of a second embodiment of apparatus for implementing the present invention.
- Figure 4 is a graph illustrating variation in coil temperature vs. time during the course of heating operations according to the invention.
- an example of a plasma generator 100 to which the invention may be applied comprises a substantially cylindrical plasma chamber 102 in which a suitable vacuum can be established.
- the plasma chamber 102 of this embodiment contains a one-turn or multiple-turn RF coil 104.
- Radio frequency (RF) energy from an RF current generator 106 is radiated from the RF coil 104 into the interior of chamber 102 to ignite and maintain a plasma therein when an ionizable gas is present at a sufficient pressure in chamber 102.
- the RF generator 106 is preferably coupled to the coil 104 through an amplifier and impedance matching network 118.
- the other end of RF coil 104 is coupled to ground, preferably through a capacitor 120 which may be a variable capacitor.
- a rotating magnet assembly 116 provided above a sputtering target 110 produces magnetic fields which sweep over the face of the target 110 to generate ions adjacent target 110 and to promote uniform erosion of the target.
- the target 110 is negatively biased by a DC power source 111.
- the magnetic fields of the magnet 116 produce an ion flux which strikes the negatively biased target 110 positioned at the top of the chamber 102.
- the ions produced by the magnet assembly 116 eject, or sputter, material from the target 110 onto a substrate, or workpiece 112, which may be one or more semiconductor wafers or other workpieces and which is supported by a substrate support 114 at the bottom of the chamber 102.
- the coil 104 may also be a supplementary source of material which is sputtered onto the substrate 112.
- the substrate support 114 may be negatively biased by an AC (or RF or DC) source 121 so as to externally bias the substrate 112. Alternatively, external biasing of the substrate 112 may optionally be eliminated.
- the atoms of material ejected from the target 110, and possibly also from coil 104, are in turn ionized by the plasma being energized by the RF coil 104 which is inductively coupled to the plasma.
- the ionized deposition material is attracted to the substrate 112 and forms a deposition layer thereon.
- Figure 1 shows one preferred embodiment of circuitry for pre-heating the coil 104 prior to deposition processes.
- a workpiece 112 may or may not be provided on the substrate 114. In either event, it is preferred that no plasma be produced, and hence no sputtering occur, during pre-heating.
- Coil 104 is resistively pre-heated by a pre-heating current from a power source 130, which is shown as a DC power source.
- Source 130 is connected to the ends of coil 104 by a double pole switch 132. Closing and opening of switch 132 may be controlled by a timer 134. During pre-heating, switch 132 is closed to couple power from power source 130 to the coil 104.
- Timer 134 can then be programmed with the predetermined pre-heating time. After heating current has been applied to the coil 104 for the predetermined preheating time, the timer 134 opens switch 132 and may, at the same time, activate RF source 106, as well as sources 111 and 121.
- power source 30 may be omitted and either one of sources 111 and 121 can be connected to switch 132 in place of source 130.
- the selected one of sources 111 and 121 would be connected in the manner shown in Figure 1 for source 130.
- This arrangement would be appropriate if the source 111 or 121 has the capability of supplying the required pre-heating current. In this case, when switch 132 is opened, the source employed for pre-heating would still be connected to supply a bias voltage to its associated component.
- either source 111 , as shown, or source 121 can be connected to the fixed contacts of switch 132, while coil 104 is connected to one set of switchable contacts of switch 132.
- Target 110, as shown, or workpiece support 114, and ground are connected to the other set of switchable contacts of switch 132.
- Figures 1 and 2 illustrate embodiments in which resistive heating is effected by supplying a direct current to coil 104.
- chamber 102 can already contain an ionizable gas, such as argon, at a pressure sufficient to permit ignition of a plasma.
- pre-heating can be effected by supplying an alternating resistive heating current to coil 104.
- chamber 102 then contains an ionizable gas at a sufficient pressure to permit a plasma to be ignited, then the frequency of the alternating preheating current should be made less than that which is required to achieve such plasma ignition.
- a plasma will not be struck or maintained at a frequency below approximately 2 MHz. This minimum frequency will vary depending upon the chamber pressure and the geometry of the particular coil and chamber.
- the gas pressure within chamber 102 is sufficiently low that a plasma could not be ignited even if a current of relatively high frequency were applied to coil 104, then the pre-heating current can have any arbitrarily selected frequency and can be at the plasma ignition frequency. As noted above, for many applications, a pressure of 10 mTorr or greater is often needed to permit striking or maintaining a plasma. Here again, the minimum chamber pressure will vary depending upon other chamber conditions and characteristics.
- Figure 3 illustrates such an embodiment in which the coil 104 is preheated from the RF power source 106 which also serves to subsequently apply RF current to the coil 104 during sputter deposition processes to energize a plasma field.
- timer 134 is coupled to the RF power source 106. The timer 134 is activated when power source 106 is turned on and is programmed to generate a signal upon completion of the predetermined pre-heating time. This signal informs the operator that plasma generation and workpiece processing can proceed. In response to this signal, the necessary quantity of ionizable gas required to generate a plasma will be introduced into chamber 102.
- pre-heating is effected by supplying coil 104 with RF power at such sufficiently high frequency. Therefore, when preheating is performed by the apparatus illustrated in Figure 3, the pressure in chamber 102 is kept sufficiently low to prevent plasma ignition even in the presence of the RF field being produced by coil 104.
- the operator will perform the conventional operations necessary to raise the gas pressure in chamber 102 through a valved inlet 136 to a level sufficient to permit plasma ignition.
- the operator can apply the RF current to the coil 104 during pre-heating processes and after a certain period of time, stop applying RF current. The operator will then position the workpiece 112 on the substrate 114 to begin sputter deposition processes.
- Figure 4 provides a chart showing the course of three pre-heating processes according to the invention.
- the coil 104 is pre-heated during the pre-heat interval to the predetermined equilibrium temperature under conditions which assure that a plasma can not be ignited.
- the pre-heat interval After the pre-heat interval, a workpiece is placed on the substrate, the conditions necessary to ignite a plasma are established and the sputter deposition process begins. In typical situations, the coil does not have to be reheated separately for each workpiece because sputtering of material onto the next workpiece is initiated before the coil can cool substantially.
- the resistive heating current supplied to coil 104 has a sufficient intensity to heat coil 104 to a target temperature at which it will begin substantial radiating.
- This target temperature is above the equilibrium temperature. Attainment of the radiation temperature can be verified simply by visual observation of the coil, which will glow when it is radiating, or on the basis of preliminary measurements to determine the time necessary, at the selected resistive heating current, for the coil to be heated to its radiation temperature.
- the pre-heating current will be replaced by an RF current at the power level required to ignite the desired plasma, at which time the temperature of coil 104 will rapidly decrease to the equilibrium temperature.
- the coil may be pre-heated to a target temperature which is below that of the process equilibrium temperature. In this arrangement, the coil would be heated up the remaining amount to the process temperature once the deposition process began.
- the pre-heating process represented by either one of curves 202, 204 or 206 is performed by supplying the coil with RF power at a frequency sufficient to permit plasma ignition, then this process is preferably performed while the pressure in chamber 102 is sufficiently low to prevent plasma ignition.
- this process is preferably performed while the pressure in chamber 102 is sufficiently low to prevent plasma ignition.
- the invention is applicable to any apparatus and method in which the plasma generating coil is disposed within the processing chamber and in which the inductively coupled plasma serves to ionize deposition material from a source for delivery to a workpiece or to etch a workpiece directly.
- Such processes include deposition processes, such as physical vapor deposition, and etching processes, such as reactive ion etching, inter alia.
- a temperature detector within chamber 102 to determine when coil 104 has reached its target temperature.
- a temperature detector would be exposed to the plasma produced during workpiece processing, so that its temperature sensing surfaces would be either coated or eroded. Therefore, if a temperature detector is employed, it should be of a type which would not be adversely affected by the conditions within such a processing chamber could be employed.
- a temperature sensor could be built into coil 104 although, in the present state of the art, this would represent an increase in the structural complexity and manufacturing cost of the coil, which would probably be unwarranted since the conditions necessary to bring the coil to its equilibrium temperature or its radiation temperature can be determined in a relatively simple manner.
- a temperature detector can be mounted on a coil during preliminary testing operations performed to determine the time required for the coil to reach its target temperature when a particular pre-heating current is being applied. If the same or similar coil is to be subsequently employed for generating a plasma, the temperature detector would preferably be removed after the necessary test measurements have been obtained.
- the time interval needed to heat the coil will vary depending upon the current level of the current source and the resistance of the coil. For many applications, it is anticipated that the time interval may range from 3 to 7 minutes, for example.
- the target temperature for pre-heating the coil will vary, depending upon the temperature of the coil during actual processing. Suitable target temperatures for many sputtering applications may range from 400 to 500° C, for example.
- the coil temperature will not have to gradually increase to equilibrium temperature during ensuing sputter deposition processes. By avoiding such gradual temperature increases, the problems associated with radiating energy during the temperature ramp, which adversely affects the deposited film properties, are avoided.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020007002652A KR20010023947A (en) | 1997-09-16 | 1998-09-15 | Resistive heating of power coil to reduce transient heating/start up effects |
EP98948219A EP1016120A1 (en) | 1997-09-16 | 1998-09-15 | Resistive heating of power coil to reduce transient heating/start up effects |
JP2000512234A JP2001516949A (en) | 1997-09-16 | 1998-09-15 | Resistance heating of power coils to reduce overheating / startup effects |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/931,170 US6023038A (en) | 1997-09-16 | 1997-09-16 | Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system |
US08/931,170 | 1997-09-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999014790A1 true WO1999014790A1 (en) | 1999-03-25 |
Family
ID=25460324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/019165 WO1999014790A1 (en) | 1997-09-16 | 1998-09-15 | Resistive heating of power coil to reduce transient heating/start up effects |
Country Status (6)
Country | Link |
---|---|
US (1) | US6023038A (en) |
EP (1) | EP1016120A1 (en) |
JP (1) | JP2001516949A (en) |
KR (1) | KR20010023947A (en) |
TW (1) | TW503262B (en) |
WO (1) | WO1999014790A1 (en) |
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---|---|---|---|---|
EP1067578A2 (en) * | 1999-07-09 | 2001-01-10 | Applied Materials, Inc. | Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance |
JP2001156051A (en) * | 1999-09-13 | 2001-06-08 | Tokyo Electron Ltd | Plasma processing method and apparatus |
WO2003030207A1 (en) * | 2001-09-28 | 2003-04-10 | Unaxis Balzers Aktiengesellschaft | Method and device for producing a plasma |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100489918B1 (en) * | 1996-05-09 | 2005-08-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Coils for generating a plasma and for sputtering |
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US6361661B2 (en) * | 1997-05-16 | 2002-03-26 | Applies Materials, Inc. | Hybrid coil design for ionized deposition |
US6579426B1 (en) * | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
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US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS584921A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Cleaning method of reaction tube |
JPS62115708A (en) * | 1985-11-15 | 1987-05-27 | Hitachi Ltd | Processing device |
US5441596A (en) * | 1994-07-27 | 1995-08-15 | Cypress Semiconductor Corporation | Method for forming a stable plasma |
EP0782172A2 (en) * | 1995-11-27 | 1997-07-02 | Applied Materials, Inc. | Plasma processing systems |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3594295A (en) * | 1966-09-19 | 1971-07-20 | Physics Technology Lab Inc | Rf sputtering of insulator materials |
US3675093A (en) * | 1971-02-01 | 1972-07-04 | Polyflon Corp | Variable capacitor |
US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
US4284490A (en) * | 1978-09-28 | 1981-08-18 | Coulter Systems Corporation | R.F. Sputtering apparatus including multi-network power supply |
US4756815A (en) * | 1979-12-21 | 1988-07-12 | Varian Associates, Inc. | Wafer coating system |
JPS56102907A (en) * | 1980-01-18 | 1981-08-17 | Toray Ind Inc | Treatment of supplying stock liquid in reverse osmosis liquid separation |
US4336118A (en) * | 1980-03-21 | 1982-06-22 | Battelle Memorial Institute | Methods for making deposited films with improved microstructures |
JPS5819363A (en) * | 1981-07-27 | 1983-02-04 | Mitsubishi Chem Ind Ltd | Preparation of anthraquinone dye for cellulose- containing fiber |
US4441092A (en) * | 1982-05-03 | 1984-04-03 | Rockwell International Corporation | Variable inductance with variable pickoff and variable flux medium permeability |
US4495221A (en) * | 1982-10-26 | 1985-01-22 | Signetics Corporation | Variable rate semiconductor deposition process |
JPS59190363A (en) * | 1983-04-11 | 1984-10-29 | Orient Watch Co Ltd | Formation of metallic thin film |
US4661228A (en) * | 1984-05-17 | 1987-04-28 | Varian Associates, Inc. | Apparatus and method for manufacturing planarized aluminum films |
US4865712A (en) * | 1984-05-17 | 1989-09-12 | Varian Associates, Inc. | Apparatus for manufacturing planarized aluminum films |
US4614994A (en) * | 1984-05-21 | 1986-09-30 | Siemens Aktiengesellschaft | Electrical wound capacitor with internal series connection |
GB2162365B (en) | 1984-07-26 | 1989-06-01 | Atomic Energy Authority Uk | Ion source |
JPH0740468B2 (en) * | 1984-12-11 | 1995-05-01 | 株式会社日立製作所 | High frequency plasma generator |
JPS61190070A (en) * | 1985-02-20 | 1986-08-23 | Hitachi Ltd | Sputter device |
JPS61238958A (en) * | 1985-04-15 | 1986-10-24 | Hitachi Ltd | Method and apparatus for forming composite thin film |
DE3650612T2 (en) * | 1985-05-13 | 1997-08-21 | Nippon Telegraph & Telephone | Process for the planarization of a thin Al layer |
US4626312A (en) * | 1985-06-24 | 1986-12-02 | The Perkin-Elmer Corporation | Plasma etching system for minimizing stray electrical discharges |
JP2515731B2 (en) * | 1985-10-25 | 1996-07-10 | 株式会社日立製作所 | Thin film forming apparatus and thin film forming method |
US4818723A (en) * | 1985-11-27 | 1989-04-04 | Advanced Micro Devices, Inc. | Silicide contact plug formation technique |
GB8629634D0 (en) * | 1986-12-11 | 1987-01-21 | Dobson C D | Reactive ion & sputter etching |
US5228501A (en) * | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
US5292393A (en) * | 1986-12-19 | 1994-03-08 | Applied Materials, Inc. | Multichamber integrated process system |
US4792732A (en) * | 1987-06-12 | 1988-12-20 | United States Of America As Represented By The Secretary Of The Air Force | Radio frequency plasma generator |
US5175608A (en) * | 1987-06-30 | 1992-12-29 | Hitachi, Ltd. | Method of and apparatus for sputtering, and integrated circuit device |
JP2602276B2 (en) * | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | Sputtering method and apparatus |
JPS6411966A (en) * | 1987-07-02 | 1989-01-17 | Fujitsu Ltd | High-temperature sputtering method |
US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
KR920003789B1 (en) * | 1988-02-08 | 1992-05-14 | 니뽄 덴신 덴와 가부시끼가이샤 | Thin film forming apparatus and ion source utilizing plasma sputtering |
US4842703A (en) * | 1988-02-23 | 1989-06-27 | Eaton Corporation | Magnetron cathode and method for sputter coating |
JP2859632B2 (en) * | 1988-04-14 | 1999-02-17 | キヤノン株式会社 | Film forming apparatus and film forming method |
JP2776826B2 (en) * | 1988-04-15 | 1998-07-16 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
US4944961A (en) * | 1988-08-05 | 1990-07-31 | Rensselaer Polytechnic Institute | Deposition of metals on stepped surfaces |
US4871421A (en) * | 1988-09-15 | 1989-10-03 | Lam Research Corporation | Split-phase driver for plasma etch system |
US4925542A (en) * | 1988-12-08 | 1990-05-15 | Trw Inc. | Plasma plating apparatus and method |
US4918031A (en) * | 1988-12-28 | 1990-04-17 | American Telephone And Telegraph Company,At&T Bell Laboratories | Processes depending on plasma generation using a helical resonator |
GB8905075D0 (en) | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Electrode assembly and apparatus |
US5169684A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US5135629A (en) * | 1989-06-12 | 1992-08-04 | Nippon Mining Co., Ltd. | Thin film deposition system |
US4990229A (en) * | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5122251A (en) * | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5429070A (en) * | 1989-06-13 | 1995-07-04 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5421891A (en) * | 1989-06-13 | 1995-06-06 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5091049A (en) * | 1989-06-13 | 1992-02-25 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5234560A (en) * | 1989-08-14 | 1993-08-10 | Hauzer Holdings Bv | Method and device for sputtering of films |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
US5213650A (en) * | 1989-08-25 | 1993-05-25 | Applied Materials, Inc. | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
US4970176A (en) * | 1989-09-29 | 1990-11-13 | Motorola, Inc. | Multiple step metallization process |
JP2834797B2 (en) * | 1989-10-25 | 1998-12-14 | 株式会社リコー | Thin film forming equipment |
DE3942964A1 (en) * | 1989-12-23 | 1991-06-27 | Leybold Ag | DEVICE FOR PRODUCING A PLASMA |
US5320728A (en) * | 1990-03-30 | 1994-06-14 | Applied Materials, Inc. | Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity |
US5094885A (en) * | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
US5238499A (en) * | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
US5304279A (en) * | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
US5178739A (en) * | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
US5195045A (en) * | 1991-02-27 | 1993-03-16 | Astec America, Inc. | Automatic impedance matching apparatus and method |
US5206516A (en) * | 1991-04-29 | 1993-04-27 | International Business Machines Corporation | Low energy, steered ion beam deposition system having high current at low pressure |
US5223112A (en) * | 1991-04-30 | 1993-06-29 | Applied Materials, Inc. | Removable shutter apparatus for a semiconductor process chamber |
US5102371A (en) * | 1991-05-24 | 1992-04-07 | Med-Pass, Incorporated | Reversible business forms |
JP2635267B2 (en) * | 1991-06-27 | 1997-07-30 | アプライド マテリアルズ インコーポレイテッド | RF plasma processing equipment |
US5392018A (en) * | 1991-06-27 | 1995-02-21 | Applied Materials, Inc. | Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits |
US5242860A (en) * | 1991-07-24 | 1993-09-07 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5171412A (en) * | 1991-08-23 | 1992-12-15 | Applied Materials, Inc. | Material deposition method for integrated circuit manufacturing |
JPH05129276A (en) * | 1991-11-06 | 1993-05-25 | Fuji Electric Co Ltd | Manufacture of insulating film |
JPH05152248A (en) * | 1991-11-26 | 1993-06-18 | Sony Corp | Method of burying aluminum-base wiring material |
US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
US5368685A (en) * | 1992-03-24 | 1994-11-29 | Hitachi, Ltd. | Dry etching apparatus and method |
US5361016A (en) * | 1992-03-26 | 1994-11-01 | General Atomics | High density plasma formation using whistler mode excitation in a reduced cross-sectional area formation tube |
US5225740A (en) * | 1992-03-26 | 1993-07-06 | General Atomics | Method and apparatus for producing high density plasma using whistler mode excitation |
US5231334A (en) * | 1992-04-15 | 1993-07-27 | Texas Instruments Incorporated | Plasma source and method of manufacturing |
US5241245A (en) * | 1992-05-06 | 1993-08-31 | International Business Machines Corporation | Optimized helical resonator for plasma processing |
US5397962A (en) * | 1992-06-29 | 1995-03-14 | Texas Instruments Incorporated | Source and method for generating high-density plasma with inductive power coupling |
JP3688726B2 (en) * | 1992-07-17 | 2005-08-31 | 株式会社東芝 | Manufacturing method of semiconductor device |
US5404079A (en) * | 1992-08-13 | 1995-04-04 | Matsushita Electric Industrial Co., Ltd. | Plasma generating apparatus |
US5312717A (en) * | 1992-09-24 | 1994-05-17 | International Business Machines Corporation | Residue free vertical pattern transfer with top surface imaging resists |
US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
JP3271359B2 (en) * | 1993-02-25 | 2002-04-02 | ソニー株式会社 | Dry etching method |
JP3252518B2 (en) * | 1993-03-19 | 2002-02-04 | ソニー株式会社 | Dry etching method |
US5430355A (en) * | 1993-07-30 | 1995-07-04 | Texas Instruments Incorporated | RF induction plasma source for plasma processing |
US5418431A (en) * | 1993-08-27 | 1995-05-23 | Hughes Aircraft Company | RF plasma source and antenna therefor |
US5431799A (en) * | 1993-10-29 | 1995-07-11 | Applied Materials, Inc. | Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency |
US5424691A (en) * | 1994-02-03 | 1995-06-13 | Sadinsky; Samuel | Apparatus and method for electronically controlled admittance matching network |
CA2144834C (en) * | 1994-03-17 | 2000-02-08 | Masahiro Miyamoto | Method and apparatus for generating induced plasma |
US5639357A (en) * | 1994-05-12 | 1997-06-17 | Applied Materials | Synchronous modulation bias sputter method and apparatus for complete planarization of metal films |
US5503676A (en) * | 1994-09-19 | 1996-04-02 | Lam Research Corporation | Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber |
US5585766A (en) * | 1994-10-27 | 1996-12-17 | Applied Materials, Inc. | Electrically tuned matching networks using adjustable inductance elements |
US5573595A (en) * | 1995-09-29 | 1996-11-12 | Lam Research Corporation | Methods and apparatus for generating plasma |
US6264812B1 (en) * | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
US5793162A (en) * | 1995-12-29 | 1998-08-11 | Lam Research Corporation | Apparatus for controlling matching network of a vacuum plasma processor and memory for same |
EP1028173A3 (en) * | 1996-02-26 | 2000-11-02 | Applied Materials, Inc. | Titanium nitride barrier layers |
US6368469B1 (en) * | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
US5689215A (en) * | 1996-05-23 | 1997-11-18 | Lam Research Corporation | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor |
US5759280A (en) * | 1996-06-10 | 1998-06-02 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
SG54576A1 (en) * | 1996-10-08 | 1998-11-16 | Applied Materials Inc | Improved inductively coupled plasma source |
-
1997
- 1997-09-16 US US08/931,170 patent/US6023038A/en not_active Expired - Lifetime
-
1998
- 1998-09-14 TW TW087115271A patent/TW503262B/en not_active IP Right Cessation
- 1998-09-15 EP EP98948219A patent/EP1016120A1/en not_active Withdrawn
- 1998-09-15 WO PCT/US1998/019165 patent/WO1999014790A1/en not_active Application Discontinuation
- 1998-09-15 KR KR1020007002652A patent/KR20010023947A/en not_active Application Discontinuation
- 1998-09-15 JP JP2000512234A patent/JP2001516949A/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS584921A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Cleaning method of reaction tube |
JPS62115708A (en) * | 1985-11-15 | 1987-05-27 | Hitachi Ltd | Processing device |
US5441596A (en) * | 1994-07-27 | 1995-08-15 | Cypress Semiconductor Corporation | Method for forming a stable plasma |
EP0782172A2 (en) * | 1995-11-27 | 1997-07-02 | Applied Materials, Inc. | Plasma processing systems |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 007, no. 076 (E - 167) 30 March 1983 (1983-03-30) * |
PATENT ABSTRACTS OF JAPAN vol. 011, no. 329 (E - 552) 27 October 1987 (1987-10-27) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1067578A2 (en) * | 1999-07-09 | 2001-01-10 | Applied Materials, Inc. | Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance |
EP1067578A3 (en) * | 1999-07-09 | 2001-04-18 | Applied Materials, Inc. | Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance |
JP2001156051A (en) * | 1999-09-13 | 2001-06-08 | Tokyo Electron Ltd | Plasma processing method and apparatus |
JP4578651B2 (en) * | 1999-09-13 | 2010-11-10 | 東京エレクトロン株式会社 | Plasma processing method, plasma processing apparatus, and plasma etching method |
WO2003030207A1 (en) * | 2001-09-28 | 2003-04-10 | Unaxis Balzers Aktiengesellschaft | Method and device for producing a plasma |
Also Published As
Publication number | Publication date |
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EP1016120A1 (en) | 2000-07-05 |
JP2001516949A (en) | 2001-10-02 |
KR20010023947A (en) | 2001-03-26 |
TW503262B (en) | 2002-09-21 |
US6023038A (en) | 2000-02-08 |
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