WO1999010796A1 - Semiconductor integrated circuit and data processing system - Google Patents

Semiconductor integrated circuit and data processing system Download PDF

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Publication number
WO1999010796A1
WO1999010796A1 PCT/JP1997/002971 JP9702971W WO9910796A1 WO 1999010796 A1 WO1999010796 A1 WO 1999010796A1 JP 9702971 W JP9702971 W JP 9702971W WO 9910796 A1 WO9910796 A1 WO 9910796A1
Authority
WO
WIPO (PCT)
Prior art keywords
state
threshold voltage
clock frequency
changed
mos transistor
Prior art date
Application number
PCT/JP1997/002971
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroshi Hatae
Atsushi Kiuchi
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1997/002971 priority Critical patent/WO1999010796A1/en
Priority to TW086117202A priority patent/TW382669B/en
Publication of WO1999010796A1 publication Critical patent/WO1999010796A1/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/08—Clock generators with changeable or programmable clock frequency

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)

Abstract

A MOS transistor constituting a semiconductor integrated circuit (16) has a 1st state in which the MOS transistor is operated with a 1st threshold voltage at a 1st clock frequency and a 2nd state in which the MOS transistor is operated with a 2nd threshold voltage higher than the 1st threshold voltage at a 2nd clock frequency lower than the 1st clock frequency. When the operating state is changed from the 1st state to the 2nd state, the clock frequency is changed from the 1st clock frequency to the 2nd clock frequency and then the threshold voltage of the MOS transistor is changed from the 1st threshold voltage to the 2nd threshold voltage. When the operating state is changed from the 2nd state to the 1st state, the threshold voltage of the MOS transistor is changed from the 2nd threshold voltage to the 1st threshold voltage and then the clock frequency is changed from the 2nd clock frequency to the 1st frequency. The control is performed by a 1st logic circuit (10) through a clock control circuit (14) and a substrate bias control circuit (12). With this constitution, a state in which priority is given to the processing speed and a state in which reduction of a subthreshold leakage current has priority over the processing speed can be changed over from one to the other without error, and further the power consumption of the semiconductor integrated circuit can be reduced.
PCT/JP1997/002971 1997-08-27 1997-08-27 Semiconductor integrated circuit and data processing system WO1999010796A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP1997/002971 WO1999010796A1 (en) 1997-08-27 1997-08-27 Semiconductor integrated circuit and data processing system
TW086117202A TW382669B (en) 1997-08-27 1997-11-18 Semiconductor integrated circuit and data processing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/002971 WO1999010796A1 (en) 1997-08-27 1997-08-27 Semiconductor integrated circuit and data processing system

Publications (1)

Publication Number Publication Date
WO1999010796A1 true WO1999010796A1 (en) 1999-03-04

Family

ID=14181013

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/002971 WO1999010796A1 (en) 1997-08-27 1997-08-27 Semiconductor integrated circuit and data processing system

Country Status (2)

Country Link
TW (1) TW382669B (en)
WO (1) WO1999010796A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000339047A (en) * 1999-05-27 2000-12-08 Hitachi Ltd Semiconductor integrated circuit device
JP2001345693A (en) * 2000-05-30 2001-12-14 Hitachi Ltd Semiconductor integrated circuit device
JP2005244212A (en) * 2004-01-30 2005-09-08 Semiconductor Energy Lab Co Ltd Semiconductor device
US8321711B2 (en) 2004-01-30 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a threshold voltage control function

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI487341B (en) 2012-01-17 2015-06-01 Throughtek Co Ltd Identify networked devices to establish point-to-point connections to systems and methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05108194A (en) * 1991-10-17 1993-04-30 Hitachi Ltd Low power consumption type semiconductor integrated circuit
JPH0653496A (en) * 1992-06-02 1994-02-25 Toshiba Corp Semiconductor device
JPH07287699A (en) * 1994-02-28 1995-10-31 Hitachi Ltd Data processor
JPH08274620A (en) * 1995-03-29 1996-10-18 Hitachi Ltd Semiconductor integrated circuit device and microcomputer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05108194A (en) * 1991-10-17 1993-04-30 Hitachi Ltd Low power consumption type semiconductor integrated circuit
JPH0653496A (en) * 1992-06-02 1994-02-25 Toshiba Corp Semiconductor device
JPH07287699A (en) * 1994-02-28 1995-10-31 Hitachi Ltd Data processor
JPH08274620A (en) * 1995-03-29 1996-10-18 Hitachi Ltd Semiconductor integrated circuit device and microcomputer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000339047A (en) * 1999-05-27 2000-12-08 Hitachi Ltd Semiconductor integrated circuit device
JP2001345693A (en) * 2000-05-30 2001-12-14 Hitachi Ltd Semiconductor integrated circuit device
JP2005244212A (en) * 2004-01-30 2005-09-08 Semiconductor Energy Lab Co Ltd Semiconductor device
US8321711B2 (en) 2004-01-30 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a threshold voltage control function
JP2014112376A (en) * 2004-01-30 2014-06-19 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
TW382669B (en) 2000-02-21

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