WO1998050945A3 - Low density film for low dielectric constant applications - Google Patents

Low density film for low dielectric constant applications Download PDF

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Publication number
WO1998050945A3
WO1998050945A3 PCT/US1998/009295 US9809295W WO9850945A3 WO 1998050945 A3 WO1998050945 A3 WO 1998050945A3 US 9809295 W US9809295 W US 9809295W WO 9850945 A3 WO9850945 A3 WO 9850945A3
Authority
WO
WIPO (PCT)
Prior art keywords
particles
film
dielectric constant
particle layer
deposit
Prior art date
Application number
PCT/US1998/009295
Other languages
French (fr)
Other versions
WO1998050945A2 (en
Inventor
Daniel J Skamser
Toivo T Kodas
Mark J Hampden-Smith
Original Assignee
Daniel J Skamser
Toivo T Kodas
Hampden Smith Mark J
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daniel J Skamser, Toivo T Kodas, Hampden Smith Mark J filed Critical Daniel J Skamser
Priority to AU73718/98A priority Critical patent/AU7371898A/en
Publication of WO1998050945A2 publication Critical patent/WO1998050945A2/en
Publication of WO1998050945A3 publication Critical patent/WO1998050945A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3694—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer having a composition gradient through its thickness
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
    • C03C17/007—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
    • C03C17/008—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28
    • C03C17/009—Mixtures of organic and inorganic materials, e.g. ormosils and ormocers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C08K7/24—Expanded, porous or hollow particles inorganic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C08K7/24—Expanded, porous or hollow particles inorganic
    • C08K7/26—Silicon- containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/40—Coatings comprising at least one inhomogeneous layer
    • C03C2217/42—Coatings comprising at least one inhomogeneous layer consisting of particles only
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating

Abstract

A film having a dielectric constant of less than 3 (most preferably less than 2) and comprising a layer of particles (82) and a deposit (84) on top of and within the particle layer, and a method of making same. The particles are agglomerated particles, hollow particles, porous particles, or a combination thereof. The film is substantially planar on its surface, and the film is substantially impermeable to gases. The method comprises coating a substrate with the particles (preferably spin-coating a colloidal solution); drying the particles to form a substantially uniform particle layer; depositing a deposit onto the particle layer (preferably by low pressure chemical vapor deposition and causing chemical vapor infiltration to bond the particles to the substrate); and optionally polishing/planarizing the deposit surface (preferably by chemical mechanical polishing).
PCT/US1998/009295 1997-05-07 1998-05-06 Low density film for low dielectric constant applications WO1998050945A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU73718/98A AU7371898A (en) 1997-05-07 1998-05-06 Low density film for low dielectric constant applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85236297A 1997-05-07 1997-05-07
US08/852,362 1997-05-07

Publications (2)

Publication Number Publication Date
WO1998050945A2 WO1998050945A2 (en) 1998-11-12
WO1998050945A3 true WO1998050945A3 (en) 1999-03-11

Family

ID=25313123

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/009295 WO1998050945A2 (en) 1997-05-07 1998-05-06 Low density film for low dielectric constant applications

Country Status (2)

Country Link
AU (1) AU7371898A (en)
WO (1) WO1998050945A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469390B2 (en) * 1999-01-26 2002-10-22 Agere Systems Guardian Corp. Device comprising thermally stable, low dielectric constant material
JP3827056B2 (en) 1999-03-17 2006-09-27 キヤノンマーケティングジャパン株式会社 Method for forming interlayer insulating film and semiconductor device
JP3600507B2 (en) 2000-05-18 2004-12-15 キヤノン販売株式会社 Semiconductor device and manufacturing method thereof
JP3532830B2 (en) 2000-05-24 2004-05-31 キヤノン販売株式会社 Semiconductor device and manufacturing method thereof
JP2002009069A (en) 2000-06-22 2002-01-11 Canon Sales Co Inc Method for forming film
JP3934343B2 (en) 2000-07-12 2007-06-20 キヤノンマーケティングジャパン株式会社 Semiconductor device and manufacturing method thereof
US6420276B2 (en) 2000-07-21 2002-07-16 Canon Sales Co., Inc. Semiconductor device and semiconductor device manufacturing method
US6500752B2 (en) 2000-07-21 2002-12-31 Canon Sales Co., Inc. Semiconductor device and semiconductor device manufacturing method
US6835669B2 (en) 2000-07-21 2004-12-28 Canon Sales Co., Inc. Film forming method, semiconductor device and semiconductor device manufacturing method
JP3545364B2 (en) 2000-12-19 2004-07-21 キヤノン販売株式会社 Semiconductor device and manufacturing method thereof
JP2005504433A (en) * 2001-07-18 2005-02-10 トリコン ホールディングス リミティド Low dielectric constant layer
JP3701626B2 (en) 2001-12-06 2005-10-05 キヤノン販売株式会社 Manufacturing method of semiconductor device
US9061317B2 (en) 2002-04-17 2015-06-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
ATE499458T1 (en) * 2002-04-17 2011-03-15 Air Prod & Chem METHOD FOR PRODUCING A POROUS SIZE LAYER
JP3859540B2 (en) 2002-05-14 2006-12-20 松下電器産業株式会社 Low dielectric constant insulating film forming material
US6825130B2 (en) 2002-12-12 2004-11-30 Asm Japan K.K. CVD of porous dielectric materials
DE102012108704A1 (en) 2012-09-17 2014-03-20 Osram Opto Semiconductors Gmbh Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip and radiation-emitting semiconductor component
JP2020527626A (en) 2017-07-20 2020-09-10 サウジ アラビアン オイル カンパニー Mitigation of condensate banking using surface modification
WO2020154063A1 (en) 2019-01-23 2020-07-30 Saudi Arabian Oil Company Mitigation of condensate and water banking using functionalized nanoparticles
JP2022096300A (en) * 2020-12-17 2022-06-29 積水化成品工業株式会社 Hollow resin particle used in resin composition for semiconductor member

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849284A (en) * 1987-02-17 1989-07-18 Rogers Corporation Electrical substrate material
US4865875A (en) * 1986-02-28 1989-09-12 Digital Equipment Corporation Micro-electronics devices and methods of manufacturing same
US5055342A (en) * 1990-02-16 1991-10-08 International Business Machines Corporation Fluorinated polymeric composition, fabrication thereof and use thereof
JPH0697298A (en) * 1992-09-14 1994-04-08 Fujitsu Ltd Forming method of semiconductor device insulating film
US5354611A (en) * 1990-02-21 1994-10-11 Rogers Corporation Dielectric composite
JPH07112126A (en) * 1993-08-27 1995-05-02 Asahi Glass Co Ltd Organosol dispersed in fluorine-containing solvent
US5614250A (en) * 1992-12-29 1997-03-25 International Business Machines Corporation Coated filler and use thereof
US5776828A (en) * 1995-10-31 1998-07-07 Micron Technology, Inc. Reduced RC delay between adjacent substrate wiring lines
US5801092A (en) * 1997-09-04 1998-09-01 Ayers; Michael R. Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4865875A (en) * 1986-02-28 1989-09-12 Digital Equipment Corporation Micro-electronics devices and methods of manufacturing same
US4849284A (en) * 1987-02-17 1989-07-18 Rogers Corporation Electrical substrate material
US5055342A (en) * 1990-02-16 1991-10-08 International Business Machines Corporation Fluorinated polymeric composition, fabrication thereof and use thereof
US5354611A (en) * 1990-02-21 1994-10-11 Rogers Corporation Dielectric composite
JPH0697298A (en) * 1992-09-14 1994-04-08 Fujitsu Ltd Forming method of semiconductor device insulating film
US5614250A (en) * 1992-12-29 1997-03-25 International Business Machines Corporation Coated filler and use thereof
JPH07112126A (en) * 1993-08-27 1995-05-02 Asahi Glass Co Ltd Organosol dispersed in fluorine-containing solvent
US5776828A (en) * 1995-10-31 1998-07-07 Micron Technology, Inc. Reduced RC delay between adjacent substrate wiring lines
US5801092A (en) * 1997-09-04 1998-09-01 Ayers; Michael R. Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices

Also Published As

Publication number Publication date
AU7371898A (en) 1998-11-27
WO1998050945A2 (en) 1998-11-12

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