WO1998048291A3 - Magnetic field sensor comprising a wheatstone bridge - Google Patents

Magnetic field sensor comprising a wheatstone bridge Download PDF

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Publication number
WO1998048291A3
WO1998048291A3 PCT/IB1998/000331 IB9800331W WO9848291A3 WO 1998048291 A3 WO1998048291 A3 WO 1998048291A3 IB 9800331 W IB9800331 W IB 9800331W WO 9848291 A3 WO9848291 A3 WO 9848291A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic field
field sensor
wheatstone bridge
point
resistive elements
Prior art date
Application number
PCT/IB1998/000331
Other languages
French (fr)
Other versions
WO1998048291A2 (en
Inventor
Kars-Michiel Hubert Lenssen
Original Assignee
Koninkl Philips Electronics Nv
Philips Svenska Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Svenska Ab filed Critical Koninkl Philips Electronics Nv
Priority to EP98904349A priority Critical patent/EP0910802A2/en
Priority to JP10529326A priority patent/JP2000512763A/en
Publication of WO1998048291A2 publication Critical patent/WO1998048291A2/en
Publication of WO1998048291A3 publication Critical patent/WO1998048291A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors

Abstract

A magnetic field sensor comprising: a plurality of resistive elements (11a, 11a'; 11b, 11b') in a Wheatstone bridge configuration (1), whereby at least one element demonstrates a magneto-resistive effect; means for causing a measurement current to pass from a first point (5) through the bridge (1) to a second point (7); a conductive track (19) which runs in proximity to the resistive elements (11a, 11a'; 11b, 11b') but is electrically insulated therefrom, for the purpose of magnetically biasing the resistive elements with a biasing current, whereby the second point (7) is electrically connected to the conductive track (19), so that the measurement current is also employed as the biasing current.
PCT/IB1998/000331 1997-04-18 1998-03-12 Magnetic field sensor comprising a wheatstone bridge WO1998048291A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP98904349A EP0910802A2 (en) 1997-04-18 1998-03-12 Magnetic field sensor comprising a wheatstone bridge
JP10529326A JP2000512763A (en) 1997-04-18 1998-03-12 Magnetic field sensor with Wheatstone bridge

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP97201143.1 1997-04-18
EP97201143 1997-04-18

Publications (2)

Publication Number Publication Date
WO1998048291A2 WO1998048291A2 (en) 1998-10-29
WO1998048291A3 true WO1998048291A3 (en) 1999-01-21

Family

ID=8228219

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB1998/000331 WO1998048291A2 (en) 1997-04-18 1998-03-12 Magnetic field sensor comprising a wheatstone bridge

Country Status (3)

Country Link
EP (1) EP0910802A2 (en)
JP (1) JP2000512763A (en)
WO (1) WO1998048291A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005047413B8 (en) * 2005-02-23 2012-06-06 Infineon Technologies Ag A magnetic field sensor element and method for performing an on-wafer function test, and methods of fabricating magnetic field sensor elements and methods of fabricating magnetic field sensor elements having an on-wafer function test
US7635974B2 (en) 2007-05-02 2009-12-22 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) based magnetic field angle sensor
US7923987B2 (en) 2007-10-08 2011-04-12 Infineon Technologies Ag Magnetic sensor integrated circuit with test conductor
US8559139B2 (en) 2007-12-14 2013-10-15 Intel Mobile Communications GmbH Sensor module and method for manufacturing a sensor module
DE102008013427A1 (en) * 2008-03-10 2009-11-05 Siemens Aktiengesellschaft Arrangement for measuring a current intensity, switching arrangement and method for measuring a current intensity
US8080993B2 (en) 2008-03-27 2011-12-20 Infineon Technologies Ag Sensor module with mold encapsulation for applying a bias magnetic field
CN202013413U (en) * 2011-04-06 2011-10-19 江苏多维科技有限公司 Single chip bridge type magnetic field sensor
CN102226836A (en) * 2011-04-06 2011-10-26 江苏多维科技有限公司 Single-chip bridge magnetic field sensor and preparation method thereof
US9104922B2 (en) * 2012-06-15 2015-08-11 Honeywell International Inc. Anisotropic magneto-resistance (AMR) gradiometer/magnetometer to read a magnetic track
CN103116143B (en) * 2013-01-22 2015-01-14 中国人民解放军国防科学技术大学 Integrated high-accuracy triaxial magnetic sensor
CN103323795B (en) * 2013-06-21 2015-04-08 中国人民解放军国防科学技术大学 Integrated three-axis magnetic sensor
US9910106B2 (en) * 2015-04-29 2018-03-06 Everspin Technologies, Inc. Magnetic field sensor with increased linearity
US11131727B2 (en) 2019-03-11 2021-09-28 Tdk Corporation Magnetic sensor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500590A (en) * 1994-07-20 1996-03-19 Honeywell Inc. Apparatus for sensing magnetic fields using a coupled film magnetoresistive transducer
DE19520178A1 (en) * 1995-06-01 1996-12-05 Siemens Ag Magnetization device for magnetoresistive thin-film sensor elements in a bridge circuit
WO1996038739A1 (en) * 1995-06-01 1996-12-05 Siemens Aktiengesellschaft Magnetic field sensor with a bridge arrangement of magneto-resistive bridging elements
WO1996038738A1 (en) * 1995-06-01 1996-12-05 Siemens Aktiengesellschaft Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500590A (en) * 1994-07-20 1996-03-19 Honeywell Inc. Apparatus for sensing magnetic fields using a coupled film magnetoresistive transducer
DE19520178A1 (en) * 1995-06-01 1996-12-05 Siemens Ag Magnetization device for magnetoresistive thin-film sensor elements in a bridge circuit
WO1996038739A1 (en) * 1995-06-01 1996-12-05 Siemens Aktiengesellschaft Magnetic field sensor with a bridge arrangement of magneto-resistive bridging elements
WO1996038738A1 (en) * 1995-06-01 1996-12-05 Siemens Aktiengesellschaft Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part

Also Published As

Publication number Publication date
WO1998048291A2 (en) 1998-10-29
JP2000512763A (en) 2000-09-26
EP0910802A2 (en) 1999-04-28

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