WO1998047661A1 - Chemicals supply system and its use - Google Patents

Chemicals supply system and its use Download PDF

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Publication number
WO1998047661A1
WO1998047661A1 PCT/EP1998/002035 EP9802035W WO9847661A1 WO 1998047661 A1 WO1998047661 A1 WO 1998047661A1 EP 9802035 W EP9802035 W EP 9802035W WO 9847661 A1 WO9847661 A1 WO 9847661A1
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WO
WIPO (PCT)
Prior art keywords
supply system
chemicals
mechanical polishing
suspensions
optionally
Prior art date
Application number
PCT/EP1998/002035
Other languages
German (de)
French (fr)
Inventor
Ulrich Finkenzeller
Claus Dusemund
Thomas Schwortschik
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Priority to DE59809935T priority Critical patent/DE59809935D1/en
Priority to EP98922664A priority patent/EP1009589B1/en
Priority to AT98922664T priority patent/ATE251969T1/en
Priority to JP54493098A priority patent/JP2001520589A/en
Publication of WO1998047661A1 publication Critical patent/WO1998047661A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the present invention relates to a new supply system for chemicals, the production of solids-containing suspensions, which u. a. needed for polishing wafers or in semiconductor manufacturing, directly at the place of use.
  • Typical semiconductor circuits are usually constructed using silicon or gallium arsenide as the substrate, to which a large number of integrated circuits are applied.
  • the various layers from which these integrated circuits are constructed are either conductive, insulating or have semiconductor properties.
  • it is essential that the wafer used has an absolutely flat surface. Therefore, it is often necessary to polish the surface or part of the surface of a wafer.
  • CMP chemical mechanical polishing
  • Chemical-mechanical polishing steps are also increasingly being used in semiconductor manufacturing. They are used to planarize silicon dioxide layers, metallization tracks or other surface structures on wafers.
  • special CMP slurries i.e. abrasive, liquid media, are used; these media must be combined with supply systems for chemicals. It is particularly important that these supply systems at the "point of use” can continuously provide suspensions with properties that are always the same. H. in particular with a constant concentration of solid particles and a constant, average distribution of the particle diameter. The latter is of particular importance, since uniform polishing results depend on it.
  • the falling laying of the pipelines allows, in the event of malfunctions, such as pump failures or insufficient flow velocity in the pipelines, chemicals or their mixtures to be returned to storage tanks by the action of gravity. If necessary, the chemicals or their mixtures can be transported back to storage tanks by applying compressed air.
  • the system can be pressurized, in particular with a slight excess pressure of about 0.3 to 5 bar.
  • all components of the system that come into contact with the chemicals used are made of materials which are inert to both strongly acidic and strongly basic, oxidizing media. These components are preferably made from chemical-resistant materials selected from the group of fully, partially or non-fluorinated polymeric hydrocarbons. The materials used are selected on the condition that the high-purity chemicals used must not suffer any loss in quality due to abrasion or detachment of undesired particles.
  • this supply system can be used to produce suspensions for chemical mechanical polishing.
  • suspensions for chemical-mechanical polishing at the point of use, preferably for the production of suspensions for chemical-mechanical polishing, which are required for the production of wafers or semiconductor circuits.
  • the present invention also relates to a method for operating the supply system, according to which a) one or more metered amounts of solid are placed in one or more intermediate containers, which b) are converted into a pasty or liquid form by mixing by adding one or more liquids, and c) are placed in one or more storage tanks or work tanks in which or in which other chemicals necessary in the work process may already have been placed.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Catching Or Destruction (AREA)

Abstract

A new chemicals supply system allows solid-containing suspensions, useful for example for polishing wafers or in the semiconductor manufacture, to be prepared directly at their utilisation site.

Description

Versorgungssystem für Chemikalien und dessen Supply system for chemicals and its
Verwendunguse
Die vorliegende Erfindung betrifft ein neues Versorgungssystem für Chemikalien, das die Herstellung von feststoffhaltigen Suspensionen, welche u. a. zum Polieren von Wafern oder in der Halbleiterfertigung benötigt werden, direkt am Ort der Verwendung ermöglicht.The present invention relates to a new supply system for chemicals, the production of solids-containing suspensions, which u. a. needed for polishing wafers or in semiconductor manufacturing, directly at the place of use.
Typische Halbleiterschaltungen sind üblicherweise aufgebaut, indem als Substrat Silizium oder Galliumarsenid verwendet wird, worauf eine Vielzahl von integrierten Schaltungen aufgebracht sind. Die verschiedenen Schichten, aus denen diese integrierten Schaltungen aufgebaut sind, sind entweder leitend, isolierend oder besitzen Halbleitereigenschaften. Um solch eine Halbieiterstruktur aufzubauen, ist es unerläßlich, daß der verwendete Wafer eine absolut ebene Oberfläche aufweist. Daher ist es häufig notwendig, die Oberfläche oder einen Teil der Oberfläche eines Wafers zu polieren.Typical semiconductor circuits are usually constructed using silicon or gallium arsenide as the substrate, to which a large number of integrated circuits are applied. The various layers from which these integrated circuits are constructed are either conductive, insulating or have semiconductor properties. In order to build up such a semiconductor structure, it is essential that the wafer used has an absolutely flat surface. Therefore, it is often necessary to polish the surface or part of the surface of a wafer.
Weiterentwicklungen in der Halbleitertechnologie haben zu immer größeren Integrationstiefen und einer fortschreitendenFurther developments in semiconductor technology have led to ever greater depths of integration and progressive
Miniaturisierung, verbunden mit immer kleiner werdenden Halbleiterstrukturen, geführt, wodurch immer höhere Anforderungen an die Fertigungsmethoden gestellt werden. Beispielsweise ist es notwendig bei solchen Halbleiterelementen, dünne Leiterbahnen oder ähnliche Strukturen auf vorab gebildeten Strukturen zu bilden.Miniaturization, combined with ever smaller semiconductor structures, led, which places ever higher demands on the manufacturing methods. For example, in the case of such semiconductor elements, it is necessary to form thin conductor tracks or similar structures on previously formed structures.
Probleme bereitet dabei, daß die Oberfläche der vorher gebildeten Strukturen häufig unregelmäßig ist. Um in der folgenden photolithographischen Behandlung ein zufriedenstellendes Ergebnis erzielen zu können, ist daher eine Planarisierung der Oberfläche notwendig.Problems arise from the fact that the surface of the previously formed structures is often irregular. In order to be able to achieve a satisfactory result in the following photolithographic treatment, a planarization of the surface is therefore necessary.
Daher sind die Methoden und Mittel, mit denen die wiederholt notwendige Planarisierung durchgeführt wird, ein zentrales Thema in der Halbleiterherstellung. In der Fachsprache wird dieser Vorgang unter dem Begriff des chemisch-mechanischen Polierens verstanden. Demgemäß sind daher bei diesem Verfahrensschritt sowohl die . 9 .Therefore, the methods and means with which the repeatedly necessary planarization is carried out are a central topic in semiconductor production. In technical terms, this process is understood as chemical-mechanical polishing. Accordingly, both the , 9.
eingesetzten technischen Vorrichtungen als auch die verwendeten chemischen Komponenten, woraus die Formulierungen der eingesetzten Poliersuspensionen zusammengesetzt sind, aber auch die Versorgungssysteme, mit deren Hilfe letztere während des Polierens zur Verfügung gestellt werden, von großem Interesse.technical devices used as well as the chemical components used, from which the formulations of the polishing suspensions used are composed, but also the supply systems by means of which the latter are made available during the polishing, of great interest.
Im allgemeinen erfolgt das chemisch-mechanische Polieren (CMP), indem der Wafer unter gleichmäßigem Druck mit einem Polierkissen, welches gleichmäßig mit einer Poliersuspension getränkt ist, unter Drehung bewegt wird.In general, chemical mechanical polishing (CMP) is carried out by moving the wafer under rotation under uniform pressure with a polishing pad which is uniformly impregnated with a polishing suspension.
Im Rahmen der Halbleiterherstellung werden ebenfalls in zunehmendem Maße chemisch-mechanische Polierschritte eingesetzt. Sie dienen dazu, Siliziumdioxid-Schichten, Metallisierungsbahnen oder andere Oberflächenstrukturen auf Wafern zu planarisieren. In diesem Zusammenhang werden spezielle CMP-Slurries, das heißt abrasive, flüssige Medien, eingesetzt, diese Medien müssen mit Versorgungssystemen für Chemikalien zusammengeführt werden. Besonders wichtig ist, daß durch diese Versorgungssysteme am "point of use" kontinuierlich Suspensionen mit immer gleichbleibenden Eigenschaften zur Verfügung gestellt werden können, d. h. insbesondere auch mit einer immer gleichbleibenden Konzentration an Feststoffteilchen und einer gleichbleibenden, durchschnittlichen Verteilung der Partikeldurchmesser. Letzteres ist von besonderer Bedeutung, da hiervon gleichmäßige Polierergebnisse abhängig sind.Chemical-mechanical polishing steps are also increasingly being used in semiconductor manufacturing. They are used to planarize silicon dioxide layers, metallization tracks or other surface structures on wafers. In this context, special CMP slurries, i.e. abrasive, liquid media, are used; these media must be combined with supply systems for chemicals. It is particularly important that these supply systems at the "point of use" can continuously provide suspensions with properties that are always the same. H. in particular with a constant concentration of solid particles and a constant, average distribution of the particle diameter. The latter is of particular importance, since uniform polishing results depend on it.
Entsprechende bisher dem Fachmann bekannte Systeme erfüllen die technischen Anforderungen nicht oder nur in begrenztem Maße.Corresponding systems previously known to the person skilled in the art do not meet the technical requirements or only to a limited extent.
Ein besonderes Problem stellt sich durch die starke Sedimentation in einigen feststoffhaltigen Suspensionen gegebenenfalls während der Lagerung, insbesondere aber auch in den Rohrleitungen, welche an den Ort des Verbrauchs führen, so daß sich erhebliche Probleme für den Transport, Einsatz von Rohstoffen und der fertigen Suspensionen im Versorgungssystem ergeben können. NOT TO BE TAKEN INTO ACCOUNT FOR THE PURPOSE OF INTERNATIONAL PROCESSING A particular problem arises from the strong sedimentation in some suspensions containing solids, possibly during storage, but especially in the pipelines, which lead to the place of consumption, so that there are considerable problems for the transport, use of raw materials and the finished suspensions in the Supply system can result. NOT TO BE TAKEN INTO ACCOUNT FOR THE PURPOSE OF INTERNATIONAL PROCESSING
Die fallende Verlegung der Rohrleitungen erlaubt es, im Fall von Störungen, wie beispielsweise bei Ausfällen von Pumpen oder mangelnder Fließgeschwindigkeit in den Rohrleitungen, Chemikalien oder deren Gemische durch Wirkung der Schwerkraft in Vorratstanks zurück zu befördern. Gegebenenfalls können die Chemikalien oder deren Gemische durch Druckluftbeaufschlagung in Vorratstanks zurück befördert werden können.The falling laying of the pipelines allows, in the event of malfunctions, such as pump failures or insufficient flow velocity in the pipelines, chemicals or their mixtures to be returned to storage tanks by the action of gravity. If necessary, the chemicals or their mixtures can be transported back to storage tanks by applying compressed air.
Zur Vermeidung von Kontaminationen während des Arbeitsprozesses kann das System mit Druck beaufschlagt werden, insbesondere mit einem leichten Überdruck von etwa 0,3 bis 5 bar arbeitet.To avoid contamination during the work process, the system can be pressurized, in particular with a slight excess pressure of about 0.3 to 5 bar.
Erfindungsgemäß sind alle mit den verwendeten Chemikalien in Berührung kommenden Komponenten des Systems aus Materialien hergestellt, die gegenüber sowohl stark sauren als auch stark basischen, oxidierenden Medien inert sind. Vorzugsweise sind diese Komponenten aus chemikalienresistenten Materialien, ausgewählt aus der Gruppe der vollständig, teilweise oder nicht fluorierten polymeren Kohlenwasserstoffe hergestellt. Die Auswahl der verwendeten Materialien erfolgt mit der Bedingung, daß verwendete hochreine Chemikalien keinen Qualitätseinbußen durch Abrieb oder Ablösung von unerwünschten Partikeln erleiden dürfen.According to the invention, all components of the system that come into contact with the chemicals used are made of materials which are inert to both strongly acidic and strongly basic, oxidizing media. These components are preferably made from chemical-resistant materials selected from the group of fully, partially or non-fluorinated polymeric hydrocarbons. The materials used are selected on the condition that the high-purity chemicals used must not suffer any loss in quality due to abrasion or detachment of undesired particles.
Insbesondere kann dieses Versorgungssystems zur Herstellung von Suspensionen für chemisch-mechanisches Polieren verwendet werden.In particular, this supply system can be used to produce suspensions for chemical mechanical polishing.
In einer erfindungsgemäßen Ausgestaltung ist es insbesondere zur direkten Versorgung mit Suspensionen für chemisch-mechanisches Polieren am Ort der Verwendung geeignet, vorzugsweise zur Herstellung von Suspensionen für chemisch-mechanisches Polieren, welche zur Herstellung von Wafern oder von Halbleiterschaltungen benötigt werden.In an embodiment according to the invention, it is particularly suitable for the direct supply of suspensions for chemical-mechanical polishing at the point of use, preferably for the production of suspensions for chemical-mechanical polishing, which are required for the production of wafers or semiconductor circuits.
Gegenstand der vorliegenden Erfindung ist auch ein Verfahren zum Betrieb des Versorgungssystems wonach, a) eine oder mehrere dosierte Feststoffmengen in einem oder mehreren Zwischenbehältern vorgelegt werden, welche b) unter Vermischung durch Zugabe einer oder mehrerer Flüssigkeiten in eine pastöse oder flüssige Form überführt werden, und c) in einen oder mehrere Vorrats- oder Arbeitstanks gegeben werden, in dem oder in denen gegebenenfalls bereits weitere im Arbeitsprozess notwendige Chemikalien vorgelegt sind. The present invention also relates to a method for operating the supply system, according to which a) one or more metered amounts of solid are placed in one or more intermediate containers, which b) are converted into a pasty or liquid form by mixing by adding one or more liquids, and c) are placed in one or more storage tanks or work tanks in which or in which other chemicals necessary in the work process may already have been placed.

Claims

P A T E N T A N S P R Ü C H E PATENT CLAIMS
1. Versorgungssystem für Chemikalien während des chemischmechanischen Polierens, gekennzeichnet durch ein System, bestehend aus a) miteinander verbundenen Vorrats- und Arbeitstanks, welche gegebenenfalls mit Rührem oder anderen Vorrichtungen zur homogenen Vermischung versehen sind und bei Bedarf mit Druck beaufschlagt werden können, b) mit Ventilen versehenen Rohrleitungen, welche fallend verlegt sind und gegebenenfalls mit Druck beaufschlagt werden können, c) gegebenenfalls einer Druckluftversorgung, geeignet für hochreine Chemikalien, sowie d) gegebenenfalls einem System zur Versorgung mit hochreinem Wasser.1. Supply system for chemicals during chemical mechanical polishing, characterized by a system consisting of a) interconnected storage and work tanks, which are optionally provided with stirrers or other devices for homogeneous mixing and can be pressurized if necessary, b) with Valve-provided pipelines, which are installed in a falling manner and can optionally be pressurized, c) optionally a compressed air supply, suitable for high-purity chemicals, and d) optionally a system for supplying high-purity water.
2. Versorgungssystem gemäß Anspruch 1 , dadurch gekennzeichnet, daß Rohrleitungen in denen feststoffhaltige Medien gefördert werden, mit statischen Mischern versehen sind.2. Supply system according to claim 1, characterized in that pipelines in which media containing solids are conveyed are provided with static mixers.
3. Versorgungssystem gemäß einem oder beiden der vorherigen Ansprüche, dadurch gekennzeichnet, daß die fallende Verlegung der Rohrleitungen es erlaubt, Chemikalien oder deren Gemische durch Wirkung der Schwerkraft in Vorratstanks zurück zu befördern.3. Supply system according to one or both of the preceding claims, characterized in that the falling laying of the pipelines allows chemicals or their mixtures to be returned to storage tanks by the action of gravity.
4. Versorgungssystem gemäß einem oder mehreren der vorherigen Ansprüche, dadurch gekennzeichnet, daß Chemikalien oder deren Gemische durch Druckluftbeaufschlagung in Vorratstanks zurück befördert werden können.4. Supply system according to one or more of the preceding claims, characterized in that chemicals or mixtures thereof can be conveyed back into storage tanks by pressurized air.
5. Versorgungssystem gemäß den Ansprüchen 1 bis 4, dadurch gekennzeichnet, daß es während des Arbeitsprozesses zur Vermeidung von Kontaminationen mit Druck beaufschlagt werden kann. 5. Supply system according to claims 1 to 4, characterized in that it can be pressurized during the work process to avoid contamination.
6. Versorgungssystem gemäß Anspruch 5, dadurch gekennzeichnet, daß es bei einem leichten Überdruck von 0,3 bis 5 bar arbeitet.6. Supply system according to claim 5, characterized in that it works at a slight excess pressure of 0.3 to 5 bar.
7. Versorgungssystem gemäß einem oder mehreren der vorherigen Ansprüche, dadurch gekennzeichnet, daß alle mit den verwendeten Chemikalien in Berührung kommenden Komponenten des Systems aus Materialien hergestellt sind, die gegenüber sowohl stark sauren als auch stark basischen oxidierenden Medien inert sind, so daß Verunreinigungen der Chemikalien durch Abrasion oder Ablösung von Partikeln vermieden werden.7. Supply system according to one or more of the preceding claims, characterized in that all components of the system coming into contact with the chemicals used are made of materials which are inert to both strongly acidic and strongly basic oxidizing media, so that the chemicals are contaminated can be avoided by abrasion or detachment of particles.
8. Versorgungssystem gemäß Anspruch 7, dadurch gekennzeichnet, daß alle mit den verwendeten Chemikalien in Berührung kommenden Komponenten des Systems aus chemikalienresistenten Materialien ausgewählt aus der Gruppe der vollständig, teilweise oder nicht fluorierten polymeren Kohlenwasserstoffe hergestellt sind.8. Supply system according to claim 7, characterized in that all the components of the system coming into contact with the chemicals used are made from chemical-resistant materials selected from the group of completely, partially or non-fluorinated polymeric hydrocarbons.
9. Verwendung des Versorgungssystems gemäß einem oder mehreren der vorherigen Ansprüche zur Herstellung von9. Use of the supply system according to one or more of the preceding claims for the production of
Suspensionen für chemisch-mechanisches Polieren.Suspensions for chemical mechanical polishing.
10. Verwendung des Versorgungssystems gemäß einem oder mehreren der Ansprüche 1 bis 8 zur direkten Versorgung mit Suspensionen für chemisch-mechanisches Polieren am Ort der10. Use of the supply system according to one or more of claims 1 to 8 for the direct supply of suspensions for chemical mechanical polishing at the site
Verwendung.Use.
11. Verwendung des Versorgungssystems gemäß einem oder mehreren der Ansprüche 1 bis 8 zur Herstellung von Suspensionen für chemisch-mechanisches Polieren, welche zur Herstellung von Wafern oder von Halbleiterschaltungen benötigt werden.11. Use of the supply system according to one or more of claims 1 to 8 for the production of suspensions for chemical mechanical polishing, which are required for the production of wafers or of semiconductor circuits.
12. Verfahren zum Betrieb eines Versorgungssystems gemäß einem oder mehreren der Ansprüche 1 bis 8, dadurch gekennzeichnet, daß a) eine oder mehrere dosierte Feststoffmengen in einem oder mehreren Zwischenbehälter vorgelegt werden, welche b) unter Vermischung durch Zugabe einer oder mehrerer Flüssigkeiten in eine pastöse oder flüssige Form überführt werden, und c) in einen oder mehrere Vorrats- oder Arbeitstanks gegeben werden, in dem oder in denen gegebenenfalls bereits weitere im Arbeitsprozess notwendige Chemikalien vorgelegt sind. 12. A method for operating a supply system according to one or more of claims 1 to 8, characterized in that a) one or more metered amounts of solids in one or several intermediate containers are submitted, which b) are converted into a pasty or liquid form by mixing one or more liquids, and c) are placed in one or more storage or work tanks, in which one or more may be necessary in the work process Chemicals are presented.
PCT/EP1998/002035 1997-04-17 1998-04-08 Chemicals supply system and its use WO1998047661A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE59809935T DE59809935D1 (en) 1997-04-17 1998-04-08 SUPPLY SYSTEM FOR CHEMICALS AND THEIR USE
EP98922664A EP1009589B1 (en) 1997-04-17 1998-04-08 Chemicals supply system and its use
AT98922664T ATE251969T1 (en) 1997-04-17 1998-04-08 CHEMICAL SUPPLY SYSTEM AND USE THEREOF
JP54493098A JP2001520589A (en) 1997-04-17 1998-04-08 Chemical supply system and its use

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19715974.5 1997-04-17
DE19715974A DE19715974A1 (en) 1997-04-17 1997-04-17 Chemical supply system and its use

Publications (1)

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WO1998047661A1 true WO1998047661A1 (en) 1998-10-29

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PCT/EP1998/002035 WO1998047661A1 (en) 1997-04-17 1998-04-08 Chemicals supply system and its use

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EP (1) EP1009589B1 (en)
JP (1) JP2001520589A (en)
AT (1) ATE251969T1 (en)
DE (2) DE19715974A1 (en)
TW (1) TW392248B (en)
WO (1) WO1998047661A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001081042A1 (en) * 2000-04-19 2001-11-01 Rodel Holdings, Inc. Polishing method using a rehydrated dry particulate polishing composition
US6464741B2 (en) 1998-10-06 2002-10-15 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10060697B4 (en) * 2000-12-07 2005-10-06 Siltronic Ag Double-sided polishing method with reduced scratch rate and apparatus for carrying out the method
US7778721B2 (en) 2003-01-27 2010-08-17 Applied Materials, Inc. Small lot size lithography bays
US7221993B2 (en) 2003-01-27 2007-05-22 Applied Materials, Inc. Systems and methods for transferring small lot size substrate carriers between processing tools
US7218983B2 (en) 2003-11-06 2007-05-15 Applied Materials, Inc. Method and apparatus for integrating large and small lot electronic device fabrication facilities
US7720557B2 (en) 2003-11-06 2010-05-18 Applied Materials, Inc. Methods and apparatus for enhanced operation of substrate carrier handlers
TWI316044B (en) 2004-02-28 2009-10-21 Applied Materials Inc Methods and apparatus for material control system interface
US7274971B2 (en) 2004-02-28 2007-09-25 Applied Materials, Inc. Methods and apparatus for electronic device manufacturing system monitoring and control
TWI290875B (en) 2004-02-28 2007-12-11 Applied Materials Inc Methods and apparatus for transferring a substrate carrier within an electronic device manufacturing facility
DE102009058436A1 (en) 2009-12-16 2011-01-20 Siltronic Ag Method for manufacturing semiconductor wafers, involves spraying tooth of polishing machine with watery alkaline solution that is supplied to semiconductor wafer in closed feeding device, where volume flow carries polishing medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2082255A5 (en) * 1970-03-09 1971-12-10 Barragan Jacques
DE2336735A1 (en) * 1973-07-19 1975-02-06 Licentia Gmbh Semiconductor surface polishing medium - prepd. by two-stage counterflow elutriation and agglomerant admixture
US4678119A (en) * 1982-10-12 1987-07-07 Buehler Ltd. Abrasive slurry supply system for use in metallographic sample preparation
EP0709166A1 (en) * 1994-10-24 1996-05-01 Motorola, Inc. Chemical-mechanical polisher and a process for polishing

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930008856B1 (en) * 1991-05-15 1993-09-16 금성일렉트론 주식회사 Mixing apparatus for constant ratio of chemical source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2082255A5 (en) * 1970-03-09 1971-12-10 Barragan Jacques
DE2336735A1 (en) * 1973-07-19 1975-02-06 Licentia Gmbh Semiconductor surface polishing medium - prepd. by two-stage counterflow elutriation and agglomerant admixture
US4678119A (en) * 1982-10-12 1987-07-07 Buehler Ltd. Abrasive slurry supply system for use in metallographic sample preparation
EP0709166A1 (en) * 1994-10-24 1996-05-01 Motorola, Inc. Chemical-mechanical polisher and a process for polishing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6464741B2 (en) 1998-10-06 2002-10-15 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
WO2001081042A1 (en) * 2000-04-19 2001-11-01 Rodel Holdings, Inc. Polishing method using a rehydrated dry particulate polishing composition
US6447375B2 (en) * 2000-04-19 2002-09-10 Rodel Holdings Inc. Polishing method using a reconstituted dry particulate polishing composition

Also Published As

Publication number Publication date
EP1009589A1 (en) 2000-06-21
DE59809935D1 (en) 2003-11-20
DE19715974A1 (en) 1998-10-22
TW392248B (en) 2000-06-01
JP2001520589A (en) 2001-10-30
EP1009589B1 (en) 2003-10-15
ATE251969T1 (en) 2003-11-15

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