WO1997033302A3 - FARBSELEKTIVES Si-DETEKTORARRAY - Google Patents

FARBSELEKTIVES Si-DETEKTORARRAY Download PDF

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Publication number
WO1997033302A3
WO1997033302A3 PCT/DE1997/000457 DE9700457W WO9733302A3 WO 1997033302 A3 WO1997033302 A3 WO 1997033302A3 DE 9700457 W DE9700457 W DE 9700457W WO 9733302 A3 WO9733302 A3 WO 9733302A3
Authority
WO
WIPO (PCT)
Prior art keywords
colour
selective
array
detector array
detector
Prior art date
Application number
PCT/DE1997/000457
Other languages
English (en)
French (fr)
Other versions
WO1997033302A2 (de
Inventor
Michel Marso
Michael Krueger
Michael Berger
Markus Thoenissen
Hans Lueth
Original Assignee
Forschungszentrum Juelich Gmbh
Michel Marso
Michael Krueger
Michael Berger
Markus Thoenissen
Hans Lueth
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Michel Marso, Michael Krueger, Michael Berger, Markus Thoenissen, Hans Lueth filed Critical Forschungszentrum Juelich Gmbh
Priority to US09/142,295 priority Critical patent/US6255709B1/en
Publication of WO1997033302A2 publication Critical patent/WO1997033302A2/de
Publication of WO1997033302A3 publication Critical patent/WO1997033302A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

Die Erfindung betrifft ein farbselektives Si-Detektorarray. Es ist auf bestechend einfache und billige Weise möglich, ein Photodetektorarray mit zeilen- und spaltenförmiger Ansteuerung herzustellen und dabei eine individuelle, spektrale Empfindlichkeit für jeden einzelnen Detektor im Array zu realisieren. Dies ermöglicht die einfache Herstellung einer integrierten Farbkamera. Die erfindungsgemäße pnp-Struktur kann für die Herstellung einer Ausleselogik und einer elektronischen Weiterverarbeitung genutzt werden. Ebenso ist die Ausführung einer MOS-Technologie auf dem Substrat möglich.
PCT/DE1997/000457 1996-03-08 1997-03-08 FARBSELEKTIVES Si-DETEKTORARRAY WO1997033302A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/142,295 US6255709B1 (en) 1996-03-08 1997-03-08 Color-selective SI detector array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19609073A DE19609073A1 (de) 1996-03-08 1996-03-08 Farbselektives Si-Detektorarray
DE19609073.3 1996-03-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US09/704,407 Division US6632699B1 (en) 1996-03-08 2000-11-02 Process for making a color selective Si detector array

Publications (2)

Publication Number Publication Date
WO1997033302A2 WO1997033302A2 (de) 1997-09-12
WO1997033302A3 true WO1997033302A3 (de) 1997-10-30

Family

ID=7787675

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1997/000457 WO1997033302A2 (de) 1996-03-08 1997-03-08 FARBSELEKTIVES Si-DETEKTORARRAY

Country Status (3)

Country Link
US (2) US6255709B1 (de)
DE (1) DE19609073A1 (de)
WO (1) WO1997033302A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19609073A1 (de) * 1996-03-08 1997-09-11 Forschungszentrum Juelich Gmbh Farbselektives Si-Detektorarray
DE19837126B4 (de) * 1998-08-17 2004-02-05 Forschungszentrum Jülich GmbH Verfahren und Vorrichtung zur elektrischen oder elektrochemischen Manipulation von Proben
DE19900879A1 (de) * 1999-01-12 2000-08-17 Forschungszentrum Juelich Gmbh Optischer Detektor mit einer Filterschicht aus porösem Silizium und Herstellungsverfahren dazu
DE10018444B4 (de) * 1999-05-04 2006-01-26 Soft Imaging System Gmbh Halbleitersystem zur Registrierung von Spektren, Farbsignalen, Farbbildern und dergleichen
DE10128654B4 (de) 2001-06-15 2008-04-10 Forschungszentrum Jülich GmbH Beidseitig mikrostrukturierter, ortsempfindlicher Detektor
US6518080B2 (en) 2001-06-19 2003-02-11 Sensors Unlimited, Inc. Method of fabricating low dark current photodiode arrays
WO2003067231A1 (en) * 2002-02-07 2003-08-14 The Regents Of The University Of California Optically encoded particles
DE10346362B4 (de) * 2003-09-30 2007-11-29 Siemens Ag Verfahren zum Herstellen eines Bauteils unter Trennung vom Herstellungssubstrat
US8308066B2 (en) * 2003-12-22 2012-11-13 The Regents Of The University Of California Method for forming optically encoded thin films and particles with grey scale spectra
DE102006039073A1 (de) * 2006-08-09 2008-02-14 Opsolution Gmbh Vorrichtung zur Untersuchung der spektralen und örtlichen Verteilung einer elektromagnetischen, von einem Gegenstand ausgehenden Strahlung
US8629986B2 (en) * 2006-08-09 2014-01-14 Biozoom Technologies, Inc. Optical filter and method for the production of the same, and device for the examination of electromagnetic radiation
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911269A (en) * 1971-03-20 1975-10-07 Philips Corp Circuit arrangement having at least one circuit element which is energised by means of radiation and semiconductor device suitable for use in such a circuit arrangement
JP3216153B2 (ja) 1991-07-30 2001-10-09 株式会社デンソー 光検出器
DE4231310C1 (de) * 1992-09-18 1994-03-24 Siemens Ag Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
DE4319413C2 (de) * 1993-06-14 1999-06-10 Forschungszentrum Juelich Gmbh Interferenzfilter oder dielektrischer Spiegel
JPH07181318A (ja) * 1993-12-22 1995-07-21 Nippon Steel Corp 光学フィルター
JPH07230983A (ja) * 1994-02-15 1995-08-29 Sony Corp 多孔質状シリコンの形成方法およびその多孔質状シリコンを用いた光半導体装置
US5478757A (en) * 1994-08-12 1995-12-26 National Science Council Method for manufacturing photodetector using a porous layer
DE4444620C1 (de) * 1994-12-14 1996-01-25 Siemens Ag Sensor zum Nachweis elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
DE19609073A1 (de) * 1996-03-08 1997-09-11 Forschungszentrum Juelich Gmbh Farbselektives Si-Detektorarray
US6103546A (en) * 1998-03-13 2000-08-15 National Science Council Method to improve the short circuit current of the porous silicon photodetector

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BERGER ET AL.: "POROSITY SUPERLATTICES: A NEW CLASS OF SI HETEROSTRUCTURES", JOURNAL OF APPLIED PHYSICS., vol. 27, 1994, NEW YORK US, pages 1333 - 1336, XP000677258 *
FABES B D ET AL: "POROSITY AND COMPOSITION EFFECTS IN SOL-GEL DERIVED INTERFERENCE FILTERS", THIN SOLID FILMS, vol. 254, no. 1/02, 1 January 1995 (1995-01-01), pages 175 - 180, XP000481506 *
FROHNHOFF S ET AL: "POROUS SILICON SUPERLATTICES", ADVANCED MATERIALS, vol. 6, no. 12, December 1994 (1994-12-01), pages 963 - 965, XP000480052 *
KRUGER M ET AL: "Color-sensitive Si-photodiode using porous silicon interference filters", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS), 15 JAN. 1997, PUBLICATION OFFICE, JAPANESE JOURNAL APPL. PHYS, JAPAN, vol. 36, no. 1A-B, ISSN 0021-4922, pages L24 - L26, XP002038000 *

Also Published As

Publication number Publication date
US6632699B1 (en) 2003-10-14
DE19609073A1 (de) 1997-09-11
WO1997033302A2 (de) 1997-09-12
US6255709B1 (en) 2001-07-03

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