WO1997033295A3 - Electronic tube system and method of manufacturing same - Google Patents

Electronic tube system and method of manufacturing same Download PDF

Info

Publication number
WO1997033295A3
WO1997033295A3 PCT/DE1997/000427 DE9700427W WO9733295A3 WO 1997033295 A3 WO1997033295 A3 WO 1997033295A3 DE 9700427 W DE9700427 W DE 9700427W WO 9733295 A3 WO9733295 A3 WO 9733295A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
tubes
field
electronic tube
tube systems
Prior art date
Application number
PCT/DE1997/000427
Other languages
German (de)
French (fr)
Other versions
WO1997033295A2 (en
Inventor
Hans W P Koops
Original Assignee
Deutsche Telekom Ag
Hans W P Koops
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche Telekom Ag, Hans W P Koops filed Critical Deutsche Telekom Ag
Priority to EP97918006A priority Critical patent/EP0885453A2/en
Publication of WO1997033295A2 publication Critical patent/WO1997033295A2/en
Publication of WO1997033295A3 publication Critical patent/WO1997033295A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00Vacuum tubes
    • H01J21/02Tubes with a single discharge path
    • H01J21/06Tubes with a single discharge path having electrostatic control means only
    • H01J21/10Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/38Cold-cathode tubes
    • H01J17/40Cold-cathode tubes with one cathode and one anode, e.g. glow tubes, tuning-indicator glow tubes, voltage-stabiliser tubes, voltage-indicator tubes
    • H01J17/44Cold-cathode tubes with one cathode and one anode, e.g. glow tubes, tuning-indicator glow tubes, voltage-stabiliser tubes, voltage-indicator tubes having one or more control electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02Electron-emitting electrodes; Cathodes
    • H01J19/24Cold cathodes, e.g. field-emissive cathode

Landscapes

  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

In known electronic tube systems the upper limit frequency and noise characteristics are limited by the known methods of producing miniaturised multiple electrode tubes, i.e. diodes, triode tubes and multi-electrode tubes. The tube systems disclosed here comprise one or more field-emission or field-ionisation cathodes connected in parallel for electrons or ions, a grid electrode with one or more annular apertures, and one or more anodes. All electrodes are formed consecutively or simultaneously, using corpuscular radiation lithography with indexed deposition, on a planar conducting strip structure which delivers the voltages. The electrode spacing is made sufficiently small to ensure that on average only a mean free path length of the molecules at normal pressure can pass between the emitters and the anode. The range of possible uses of the invention is very wide but relates in particular to high-frequency technology.
PCT/DE1997/000427 1996-03-09 1997-03-03 Electronic tube system and method of manufacturing same WO1997033295A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP97918006A EP0885453A2 (en) 1996-03-09 1997-03-03 Electronic tube system and method of manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19609234.5 1996-03-09
DE1996109234 DE19609234A1 (en) 1996-03-09 1996-03-09 Pipe systems and manufacturing processes therefor

Publications (2)

Publication Number Publication Date
WO1997033295A2 WO1997033295A2 (en) 1997-09-12
WO1997033295A3 true WO1997033295A3 (en) 1997-12-04

Family

ID=7787766

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1997/000427 WO1997033295A2 (en) 1996-03-09 1997-03-03 Electronic tube system and method of manufacturing same

Country Status (4)

Country Link
EP (1) EP0885453A2 (en)
DE (1) DE19609234A1 (en)
TW (1) TW357932U (en)
WO (1) WO1997033295A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198557B1 (en) 1997-06-25 2001-03-06 Deutsche Telekom Ag Telecommunication system having frequency-dividing optical components for the parallel processing of optical pulses
DE10006361A1 (en) * 1999-05-25 2000-11-30 Deutsche Telekom Ag Miniaturized terahertz radiation source, has element such as field emitter, electrostatic lens, beam deflector, metal grid and second anode mounted on semiconducting chip by nanolithography
WO2000072413A2 (en) 1999-05-25 2000-11-30 Deutsche Telekom Ag Miniaturized terahertz radiation source
EP1363164B1 (en) 2002-05-16 2015-04-29 NaWoTec GmbH Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface
DE10302794A1 (en) * 2003-01-24 2004-07-29 Nawotec Gmbh Manufacture of corpuscular radiation systems, e.g. electron beam or ion beam systems, producing corpuscular radiation systems on substrates using corpuscular radiation induced deposition
US20070029046A1 (en) * 2005-08-04 2007-02-08 Applied Materials, Inc. Methods and systems for increasing substrate temperature in plasma reactors
WO2009084054A1 (en) * 2007-12-28 2009-07-09 Selex Sistemi Integrati S.P.A. High frequency triode-type field emission device and process for manufacturing the same
EP2413343B1 (en) * 2010-07-26 2015-11-04 Hans W.P. Dr. Koops Device for generating THz radiation with free electron beams

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855636A (en) * 1987-10-08 1989-08-08 Busta Heinz H Micromachined cold cathode vacuum tube device and method of making
WO1992002030A1 (en) * 1990-07-18 1992-02-06 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
EP0490536A1 (en) * 1990-11-28 1992-06-17 Matsushita Electric Industrial Co., Ltd. Vacuum microelectronic field-emission device
EP0513777A2 (en) * 1991-05-13 1992-11-19 Seiko Epson Corporation Multiple electrode field electron emission device and process for manufacturing it
EP0535953A2 (en) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Field-emission type electronic device
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
EP0569671A1 (en) * 1992-05-12 1993-11-18 Nec Corporation Field emission cold cathode and method for manufacturing the same
US5409568A (en) * 1992-08-04 1995-04-25 Vasche; Gregory S. Method of fabricating a microelectronic vacuum triode structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
JP2968014B2 (en) * 1990-01-29 1999-10-25 三菱電機株式会社 Micro vacuum tube and manufacturing method thereof
US5192240A (en) * 1990-02-22 1993-03-09 Seiko Epson Corporation Method of manufacturing a microelectronic vacuum device
US5203731A (en) * 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
US5150019A (en) * 1990-10-01 1992-09-22 National Semiconductor Corp. Integrated circuit electronic grid device and method
CA2070478A1 (en) * 1991-06-27 1992-12-28 Wolfgang M. Feist Fabrication method for field emission arrays
EP0525763B1 (en) * 1991-08-01 1995-10-25 Texas Instruments Incorporated A method for building a vacuum microelectronics device
JPH05182609A (en) * 1991-12-27 1993-07-23 Sharp Corp Image display device
GB9210419D0 (en) * 1992-05-15 1992-07-01 Marconi Gec Ltd Cathode structures
DE19502966A1 (en) * 1995-01-31 1995-06-14 Ignaz Prof Dr Eisele Opto-electronic component for colour display screen or gas sensor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855636A (en) * 1987-10-08 1989-08-08 Busta Heinz H Micromachined cold cathode vacuum tube device and method of making
WO1992002030A1 (en) * 1990-07-18 1992-02-06 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
EP0490536A1 (en) * 1990-11-28 1992-06-17 Matsushita Electric Industrial Co., Ltd. Vacuum microelectronic field-emission device
EP0513777A2 (en) * 1991-05-13 1992-11-19 Seiko Epson Corporation Multiple electrode field electron emission device and process for manufacturing it
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
EP0535953A2 (en) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Field-emission type electronic device
EP0569671A1 (en) * 1992-05-12 1993-11-18 Nec Corporation Field emission cold cathode and method for manufacturing the same
US5409568A (en) * 1992-08-04 1995-04-25 Vasche; Gregory S. Method of fabricating a microelectronic vacuum triode structure

Also Published As

Publication number Publication date
TW357932U (en) 1999-05-01
WO1997033295A2 (en) 1997-09-12
DE19609234A1 (en) 1997-09-11
EP0885453A2 (en) 1998-12-23

Similar Documents

Publication Publication Date Title
KR100403060B1 (en) Patterned resistor suitable for electron-emitting device, and associated fabrication method
US3935499A (en) Monolythic staggered mesh deflection systems for use in flat matrix CRT's
US4020381A (en) Cathode structure for a multibeam cathode ray tube
KR100343205B1 (en) Field emission array using carbon nanotube and fabricating method thereof
US5173634A (en) Current regulated field-emission device
US20010007783A1 (en) Method for fabricating triode-structure carbon nanotube field emitter array
GB2146836A (en) A source of ions with at least two ionization chambers, in particular for forming chemically reactive ion beams
US5847407A (en) Charge dissipation field emission device
JPH02226635A (en) Field emission type electron source
WO1997033295A3 (en) Electronic tube system and method of manufacturing same
US2358542A (en) Currentless grid tube
US5801486A (en) High frequency field emission device
US3651360A (en) Triode electron gun with positive grid and modular cathode
GB1464490A (en) Beam-plasma type ion source
US2130281A (en) Electron discharge tube
CN112599397B (en) Storage type ion source
US6495953B1 (en) Cold cathode electron gun
JPS6318297B2 (en)
US3022933A (en) Multiple electron beam ion pump and source
US2245614A (en) Electron discharge device
US2092804A (en) Screen grid electron discharge tube
US4886992A (en) Electron source with magnetic means
US2340407A (en) Electron multiplier apparatus
US2207354A (en) Electron discharge apparatus
US9105434B2 (en) High current, high energy beam focusing element

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CA JP KP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): CA JP KP KR US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWE Wipo information: entry into national phase

Ref document number: 1997918006

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

Ref document number: 97531349

Format of ref document f/p: F

WWP Wipo information: published in national office

Ref document number: 1997918006

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: CA