WO1997033295A2 - Electronic tube system and method of manufacturing same - Google Patents

Electronic tube system and method of manufacturing same Download PDF

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Publication number
WO1997033295A2
WO1997033295A2 PCT/DE1997/000427 DE9700427W WO9733295A2 WO 1997033295 A2 WO1997033295 A2 WO 1997033295A2 DE 9700427 W DE9700427 W DE 9700427W WO 9733295 A2 WO9733295 A2 WO 9733295A2
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WO
WIPO (PCT)
Prior art keywords
tubes
electrodes
pipe systems
field
electrode
Prior art date
Application number
PCT/DE1997/000427
Other languages
German (de)
French (fr)
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WO1997033295A3 (en
Inventor
Hans W. P. Koops
Original Assignee
Deutsche Telekom Ag
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Filing date
Publication date
Application filed by Deutsche Telekom Ag filed Critical Deutsche Telekom Ag
Priority to EP97918006A priority Critical patent/EP0885453A2/en
Publication of WO1997033295A2 publication Critical patent/WO1997033295A2/en
Publication of WO1997033295A3 publication Critical patent/WO1997033295A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/38—Cold-cathode tubes
    • H01J17/40—Cold-cathode tubes with one cathode and one anode, e.g. glow tubes, tuning-indicator glow tubes, voltage-stabiliser tubes, voltage-indicator tubes
    • H01J17/44—Cold-cathode tubes with one cathode and one anode, e.g. glow tubes, tuning-indicator glow tubes, voltage-stabiliser tubes, voltage-indicator tubes having one or more control electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/24—Cold cathodes, e.g. field-emissive cathode

Definitions

  • the invention relates to pipe systems of the kind defined in the preamble of claim 1 and to a production method for such pipe systems.
  • Such micro-tube systems are known in vacuum micro-electrical engineering [Brodle, J. J. Muray “The physics of micro and nano-fabrication” Plenum Press, NY (1992)]
  • Such tube systems are equipped with "Spmdt" cathodes called lithographically made cathodes. These cathodes are produced with complicated lithographic processes in multilayer structuring with optical or corpuscular beam lithography with partly self-adjusting processes.
  • the field emission cathode can be etched from silicon, covered with heavy metals or built up from metal by vapor deposition.
  • the reproducibility of the production process is so low that many cathodes arranged in an array must always be used in order to ensure the emittance of the cathode and to achieve the required low internal resistance "transconductance" of the tubes.
  • the object of the invention is to provide pipe systems which are suitable for substantially higher frequencies and to specify a practical manufacturing process for this purpose.
  • the invention achieves the first part of this object with a system described in the characterizing part of patent claim 1.
  • Fig. 1 Principle structure for diode, triode and deflection
  • Fig. 2 Top: triode made of cathode, emitter and anode.
  • triode consisting of several cathodes, grid and anode to increase the emission current
  • FIG. 4 Micro pentode from field emitter cathode K, grids Gl to G3 and anode A with potentials
  • Fig. 5 Micro tubes constructed using the
  • the tube systems described consist of one or more field emission or field ionization cathodes connected in parallel for electrons or ions, a grid electrode with one or more ring-shaped openings and one or more anodes. All electrodes are built up one after the other using corpuscular beam lithography with induced deposition or simultaneously on a planar conductor track structure which supplies the voltages.
  • the electrode spacing is chosen so small that on average only a medium free path of the molecules at normal pressure fits between the emitter and anode electrode. At air and normal pressure, this distance is approximately 0.5 ⁇ m.
  • the electrodes supplying voltage are thick and the conductor tracks are made far apart. Diameters of 0.1 ⁇ m and distances of> 0.5 ⁇ m are sufficient to keep the field strengths in the pipes at the operating voltage of ⁇ 50 V below the limit required for permanent operation.
  • Such tubes require no or only a mild vacuum (1 Torr) for permanent operation and are therefore not called vacuum microelectronic tubes, but miniaturized multi-electrode tubes.
  • the tubes can be operated with different polarities, since electrons are ionized at 2 ⁇ IO 7 V / cm and water at IO 7 V / cm. These field strengths are achieved when etched single crystals are not used as field emitters or field ionizers, but when the nanocrystalline composite materials that are generated during electron beam or ion beam-reduced deposition are used.
  • These materials are nanocrystalline and can be used as super tips on blunt, prefabricated tips or electrodes be put on. Due to their nanocrystalline structure, these super peaks emit or ionize absorbed water or other gases at the specified field strengths, which are already achieved at low voltages below 50 V, if the cathode-anode distance is smaller than the mean free path length of the gases at normal pressure.
  • Such tubes have very small capacities and a flight time of the electrons of less than 1 ps or ⁇ 40 psec of the ions. This means that these tubes can be successfully used as an electronic component in ultra-high frequency technology. Due to the small space requirement of a few ⁇ m ⁇ several of these tubes can be interconnected in close proximity to arithmetic circuits. With the corpuscular beam-induced deposition, resistors with very small capacitances, small capacitances and inductivities with ⁇ m dimensions can be manufactured and built into the circuits, so that the integrated tube electronics for GHz applications is possible.
  • Diodes, triodes, tetrodes, pentodes, miniaturized accelerators and filters and other corpuscular beam optical arrangements can be built using this technique. Tips as field emission cathodes for electron emitters and for ion emitters can be used in other prefabricated circuits and tubes and the operating voltage required can thus be greatly reduced. With the help of electron beam-induced deposition, nanocrystalline composite material can be built with nanometer precision into nanoelectronic assemblies and circuits in a given wiring level.
  • Some preferred embodiments of tube systems which are built up on an insulating medium on conductor path structures prefabricated in planar technology with lithography using field current emission cathodes with a passive current stabilizing resistor and which are assigned at least one anode made of one or more wires are:
  • a diode connected as an ion emitter and operated with H 3 O + ions since all surfaces are covered with water in air and therefore field ionization is used for field strengths above IO 7 volts / cm and the inner tube resistance is determined
  • triode of conventional design, which can also be operated again with ions or electrons, in which in addition to the cathode and anode em grid in the form of one or more openings or even only in the form of 2 rods without upper and lower limits of the field between the two Electrodes is connected, • a tetrode or pentode, in which one or more grids are connected downstream of the first grid,
  • a tetrode or pentode in which a plurality of gratings and partial gratings are connected downstream of the first grid and which can be switched separately by two potential feeds, and thereby additionally also enable fast switching between two anodes which are insulated from one another.
  • All of these tubes can be operated in a moderate vacuum of 1 Torr, so that the mean free path of the electrons or ions in the gas is set at this pressure such that the tubes become functional due to the tube dimensions.
  • the tubes can be hermetically encapsulated in an evacuated vessel and the electrical feeds through the capsule be run as thin lines or the electrical leads are made through the walls of the encapsulation as lead-through wires in insulated filled bores.
  • the resistors for passive current control of the emitters connected upstream of the electron or ion emitters can, depending on the position m of the tubes, be designed in such a way that the field strength variation m of the tubes is compensated for and uniform current emission is achieved from the individual cathodes .
  • conductive and insulating wires can be built up in the plane and in space.
  • the wire diameter is approx. 0.1 ⁇ m, the length up to 10 ⁇ m.
  • the wires can withstand 2 mA / cm 2 current densities. The value is 8 times higher than for example with aluminum (250000 A / cm2).
  • Field emission is possible from the wire tips with approximately 15 times less internal resistance per emitter than with conventional field emitters in vacuum microelectronics.
  • field emitter electron sources can be built with a built-in current stabilizing resistor. Each tip works independently and in a controlled manner and passively stabilizes its emission current. So that the request for Redundancy at the tips in the tubes or m the parallel emitters reduced.
  • the wires end in a very fine tip with radii> 5 nm, but with nanometer-sized crystals that protrude from the tip and thus cause a field strengthening. This manifests itself in a greatly reduced extraction voltage for the field electron current.
  • the resistance of the deposited materials can be set in the range of 5 orders of magnitude via the deposition conditions.
  • the computer-controlled deposition produces 3-dimensional structures which serve as electrodes for micro tubes and tube systems, which generate individual beams, or which can often be produced side by side.
  • a technology has thus been found with which multiple electron beams can be produced on lithographic circuits and carrier boards, which in turn can then be used as production means for deposition structures. With this, the production technology has been found with which microtubes, Dynatron oscillators and fast amplifying switches or fast digital memories that can be erased with 100 GHz can be produced in parallel production technology.
  • FIG. 1 shows the basic structure for a diode, triode and deflection tetrode with THz Switching characteristics.
  • the deflection electrode With the deflection electrode, the amplification factor and a superimposed circuit can be carried out on 2 anodes, which enables particularly stable operation.
  • FIG. 2 shows a triode made of cathode, emitter and anode at the top and a triode made of several cathodes, grating and anode at the bottom for increasing the emission current and reducing the internal resistance.
  • the cathode is at 0 V, the grid at 50 V and the anode at 60 V.
  • Multiple electrodes that are installed between the cathode and anode can be used to thaw multi-electrode tubes, accelerators and decelerators and other tubes.
  • FIG. 4 shows a micro pentode consisting of field emitter cathode K, grids G1 to G3 and anode A with potentials.
  • triodes Structures already implemented to form triodes are shown in FIG. 5.
  • the structure of two micro tubes is shown here.
  • the tubes are constructed in a non-optimized form with the help of electron beam-induced deposition and computer control in the scanning electron microscope. Above the two pipes are shown m top view and below m side view.
  • FIG. 6 shows 2 micro-tube structures made of platinum-containing nanocrystalline material in the oblique view.
  • the picture shows the technical feasibility for structuring with additive lithography.
  • the hairpin carrying the tip can be designed as a low-resistance heating element and the shaft carrying the tip as a high-resistance passive stabilizing resistor.
  • Peak adsorbed gases can be desorbed and the emissions stabilized during operation. This is also due to continued heating or occasional "flashing", i.e. H. the tip is heated briefly, the tip being cleaned in a conventional manner by these methods.
  • the characteristic data that can be achieved with the triodes can be determined from the following data.
  • the field emitter tube operates at 150 uA emission current, with an acceleration voltage U e ⁇ r ⁇ 10 V. Then the internal resistance (“transconductance") R ⁇ > 15 ⁇ S.
  • Conventional field emitters achieve 1 - 2 ⁇ S! ,
  • the field emission tubes can be switched in different ways:
  • Switching with 0.1 ps can take place at 160 ⁇ A discharge current (voltage pulse at the extractor tube). This means that these tubes, which are constructed without semiconductor materials, considerably exceed the switching speed of circuits made of III / V or II / VI semiconductors.

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  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

In known electronic tube systems the upper limit frequency and noise characteristics are limited by the known methods of producing miniaturised multiple electrode tubes, i.e. diodes, triode tubes and multi-electrode tubes. The tube systems disclosed here comprise one or more field-emission or field-ionisation cathodes connected in parallel for electrons or ions, a grid electrode with one or more annular apertures, and one or more anodes. All electrodes are formed consecutively or simultaneously, using corpuscular radiation lithography with indexed deposition, on a planar conducting strip structure which delivers the voltages. The electrode spacing is made sufficiently small to ensure that on average only a mean free path length of the molecules at normal pressure can pass between the emitters and the anode. The range of possible uses of the invention is very wide but relates in particular to high-frequency technology.

Description

Rohrensysteme und Herstellungsverfahren hierzuPipe systems and manufacturing processes therefor
Beschreibung:Description:
Die Erfindung bezieht sich auf Rohrensysteme der im Oberbe¬ griff des Patentanspruch 1 naher definierten Art und auf ein Herstellungsverfahren für solche Rohrensysteme. Derartige Mikro-Rohrensystem sind in der Vakuum-Mikroelek- trotechnik bekannt [Brodle, J. J. Muray "The physics of micro and nano-fabrication" Plenum Press, NY (1992)]The invention relates to pipe systems of the kind defined in the preamble of claim 1 and to a production method for such pipe systems. Such micro-tube systems are known in vacuum micro-electrical engineering [Brodle, J. J. Muray "The physics of micro and nano-fabrication" Plenum Press, NY (1992)]
Solche Rohrensysteme sind mit "Spmdt"-Kathoden genannten lithographisch gestellten Kathoden ausgerüstet. Diese Kathoden werden mit komplizierten lithographiscnen Ver¬ fahren in Mehrlagen-Strukturierung mit optischer oder Korpuskularstrahl-Lithographie mit teilweise selbstjustie- renden Verfahren hergestellt. Dabei kann die Feldemissions- Kathode aus Silizium geatzt, mit Schwermetallen bezogen oder aus Metall durch Aufdampfen aufgebaut werden. Die Reproduzierbarkeit der Herstellungsverfahren ist dabei jedoch so gering, daß stets viele in einem Array angeord¬ neten Kathoden eingesetzt werden müssen, um die Emittanz der Kathode zu gewährleisten und den erforderlichen nied¬ rigen Innenwiderstand "Transconductance" der Rohre zu erreichen.Such tube systems are equipped with "Spmdt" cathodes called lithographically made cathodes. These cathodes are produced with complicated lithographic processes in multilayer structuring with optical or corpuscular beam lithography with partly self-adjusting processes. The field emission cathode can be etched from silicon, covered with heavy metals or built up from metal by vapor deposition. However, the reproducibility of the production process is so low that many cathodes arranged in an array must always be used in order to ensure the emittance of the cathode and to achieve the required low internal resistance "transconductance" of the tubes.
Durch die Vielzahl der in Flachen angeordneten Kathoden wachst die parasitäre Streukapazitat der Anordnung und begrenzt die Systeme auf den Betrieb bei wenigen GHz, wie der erwähnten Literaturstelle [Brodle, J. J. Muray "The physics of micro and nano-fabrication" Plenum Press, NY (1992)] entnehmbar ist. Aufgabe der Erfindung ist es, Rohrensysteme zu schaffen, die für wesentlich höhere Frequenzen geeignet sind und hierzu ein praktikables Herstellungsverfahren anzugeben.Due to the large number of cathodes arranged in flat areas, the parasitic stray capacitance of the arrangement grows and limits the systems to operation at a few GHz, such as the aforementioned reference [Brodle, JJ Muray "The physics of micro and nano-fabrication" Plenum Press, NY (1992 )] is removable. The object of the invention is to provide pipe systems which are suitable for substantially higher frequencies and to specify a practical manufacturing process for this purpose.
Die Erfindung lost den ersten Teil dieser Aufgabe mit einem im Kennzeichen des Patentanspruchs 1 beschriebenen System.The invention achieves the first part of this object with a system described in the characterizing part of patent claim 1.
Eine vorteilhafte Weiterbildung hierzu ist im Kennzeichen des Patentanspruchs 2 beschrieben.An advantageous development for this is described in the characterizing part of patent claim 2.
Den zweiten Teil dieser Aufgabe lost em Herstellungsver¬ fahren entsprechend dem Kennzeichen des Patentanspruchs 3.The second part of this task is solved by the manufacturing method according to the characterizing part of patent claim 3.
Eine vorteilhafte Weiterbildung dieses Verfahrens ist im Kennzeichen des Patentanspruchs 4 beschrieben.An advantageous development of this method is described in the characterizing part of patent claim 4.
In den nachfolgenden Ausführungsbeispielen wird die Erfindung mit ihren vielfaltigen Variationsmoglichkeiten und Wirkungsvarianten naher erklart. In den zugehörigen Zeichnungen zeigen dieIn the following exemplary embodiments, the invention is explained in more detail with its various possible variations and effect variants. In the accompanying drawings, the
Fig. 1: Prinzipaufbau für Diode, Triode und Ablenk-Fig. 1: Principle structure for diode, triode and deflection
Tetrode mit THz-Schalteigenschaften, Fig. 2: Oben: Triode aus Kathode, Emitter und Anode.Tetrode with THz switching properties, Fig. 2: Top: triode made of cathode, emitter and anode.
Unten: Triode aus mehreren Kathoden , Gitter und Anode zur Vergrößerung des Emissionsstromes,Below: triode consisting of several cathodes, grid and anode to increase the emission current,
Fig. 3: Mikro-Triode mit Potentialverlauf, Kathode 0 V,3: micro-triode with potential profile, cathode 0 V,
Gitter 50 V, Anode 60 Volt, Fig. 4: Mikro-Pentode aus Feldemitter-Kathode K, Gittern Gl bis G3 und Anode A mit Potentialen, Fig. 5: Mikro-Rohren aufgebaut mit Hilfe derGrid 50 V, anode 60 volt, Fig. 4: Micro pentode from field emitter cathode K, grids Gl to G3 and anode A with potentials, Fig. 5: Micro tubes constructed using the
Elektronenstrahl-mduzierten Deposition und Rechnersteuerung im Rasterlektronenmikroskop, Oben Aufsicht, unten Seitansicht von 2 Rohren, Fig. 6: Schragbild von 2 Mikrorohren-Aufbauten aus Platinhaltigem nanokristallmem Material. Die beschriebenen Rohrensysteme bestehen aus einer oαer mehreren parallel geschalteten Feldemissions- oαer Feldionisation-Kathoden für Elektronen oαer Ionen, einer Gitter-Elektrode mit einer oder mehreren ringförmigen Offnungen und einer oder mehreren Anoden. Alle Elektroden werden mit Hilfe der Korpuskularstrahl-Lithographie mit induzierter Deposition nacheinander oder gleichzeitig auf einer die Spannungen zufuhrenden planaren Leiterbahnstruk¬ tur aufgebaut. Der Elektrodenabstand wird dabei so klein gewählt, daß im Mittel nur eine mittlere freie Weglange der Moleküle bei Normaldruck zwischen die Emitter und Anoden- Elektrode paßt. Bei Luft und Normaldruck ist diese Strecke ca. 0, 5 μm groß.Electron beam-induced deposition and computer control in a scanning electron microscope, top view, bottom side view of 2 tubes, Fig. 6: Oblique view of 2 microtube assemblies made of platinum-containing nanocrystalline material. The tube systems described consist of one or more field emission or field ionization cathodes connected in parallel for electrons or ions, a grid electrode with one or more ring-shaped openings and one or more anodes. All electrodes are built up one after the other using corpuscular beam lithography with induced deposition or simultaneously on a planar conductor track structure which supplies the voltages. The electrode spacing is chosen so small that on average only a medium free path of the molecules at normal pressure fits between the emitter and anode electrode. At air and normal pressure, this distance is approximately 0.5 μm.
Um elektrische Überschlage durch das Wachstum von Molekul- ketten, das oberhalb 10^ V/cm einsetzt, zu vermeiden, sinα die Spannung zufuhrenden Elektroden dick und die Leiterbah¬ nen weit auseinander ausgeführt. Durchmesser von 0.1 μm und Abstände von > 0.5 μm reichen dabei aus, um die Feldstarken in der Rohre bei der Betriebsspannung von < 50 V unter der für dauerhaften Betrieb erforderlichen Grenze zu halten.In order to avoid electrical flashover due to the growth of molecular chains that start above 10 ^ V / cm, the electrodes supplying voltage are thick and the conductor tracks are made far apart. Diameters of 0.1 μm and distances of> 0.5 μm are sufficient to keep the field strengths in the pipes at the operating voltage of <50 V below the limit required for permanent operation.
Derartige Rohren benotigen kein oder nur ein mildes Vakuum (1 Torr) für den dauerhaften Betrieb und werden deshalb nicht Vakuum-mikroelektronische Rohren, sondern miniaturi¬ sierte Mehr-Elektroden-Rohren genannt. Die Rohren können mit verschiedenen Polaritäten betrieben werden, da Elek¬ tronen bei 2 • IO7 V/cm und Wasser bei IO7 V/cm ionisiert wird. Diese Feldstarken werden erreicht, wenn nicht geatzte Einkristalle als Feldemitter oder Feldionisierer verwendet werden, sondern, wenn die nanokristallmen Verbundmate- rialien, die bei der Elektronenstrahl- oder Ionenstrahl- mduzierten Deposition entstehen, verwendet werden.Such tubes require no or only a mild vacuum (1 Torr) for permanent operation and are therefore not called vacuum microelectronic tubes, but miniaturized multi-electrode tubes. The tubes can be operated with different polarities, since electrons are ionized at 2 · IO 7 V / cm and water at IO 7 V / cm. These field strengths are achieved when etched single crystals are not used as field emitters or field ionizers, but when the nanocrystalline composite materials that are generated during electron beam or ion beam-reduced deposition are used.
Diese Materialien sind nanokristallm und können als Super¬ spitzen auf stumpfe vorgefertigte Spitzen oder Elektroden aufgesetzt werden. Durch ihren nanokristallinen Aufbau emittieren diese Superspitzen oder ionisieren diese absor¬ biertes Wasser oder andere Gase schon bei den angegebenen Feldstärken, die bei den niedrigen Spannungen unter 50 V bereits erreicht werden, wenn der Kathoden-Anoden-Abstand kleiner als die mittlere freie Weglänge der Gase bei Nor¬ maldruck ist. Derartige Röhren besitzen sehr kleine Kapa¬ zitäten und eine unter 1 ps liegende Flugzeiten der Elek¬ tronen oder < 40 psec der Ionen. Das bedeutet, diese Röhren können in der Höchstfrequenztechnik mit Erfolg als elektro¬ nisches Bauelement eingesetzt werden. Durch den geringen Platzbedarf von wenigen μm^ können mehrere dieser Röhren in naher Nachbarschaft zu Rechenschaltungen zusammengeschaltet werden. Mit der Korpuskularstrahl-induzierten Deposition können auch Widerstände mit sehr geringen Kapazitäten, kleine Kapazitäten und Induktivitäten mit μm Abmessungen hergestellt und in die Schaltungen eingebaut werden, so daß die integrierte Röhren-Elektronik für GHz-Anwendungen möglich wird.These materials are nanocrystalline and can be used as super tips on blunt, prefabricated tips or electrodes be put on. Due to their nanocrystalline structure, these super peaks emit or ionize absorbed water or other gases at the specified field strengths, which are already achieved at low voltages below 50 V, if the cathode-anode distance is smaller than the mean free path length of the gases at normal pressure. Such tubes have very small capacities and a flight time of the electrons of less than 1 ps or <40 psec of the ions. This means that these tubes can be successfully used as an electronic component in ultra-high frequency technology. Due to the small space requirement of a few μm ^ several of these tubes can be interconnected in close proximity to arithmetic circuits. With the corpuscular beam-induced deposition, resistors with very small capacitances, small capacitances and inductivities with μm dimensions can be manufactured and built into the circuits, so that the integrated tube electronics for GHz applications is possible.
Dioden, Trioden, Tetroden, Pentoden, miniaturisierte Beschleuniger und Filter und andere korpuskularstrahl- optische Anordnungen können mit dieser Technik aufgebaut werden. Spitzen als Feldemissionskathoden für Elektronen- emitter und für Ionenemitter können in auf andere vorge¬ fertigte Schaltungen und Röhren eingesetzt werden und so die erforderliche Betriebsspannung stark gesenkt werden. Mit Hilfe der Elektronenstrahl-induzierten Deposition kann mit Nanometer-Präzision nanokristallines Verbundmaterial zu nanoelektronischen Baugruppen und Schaltungen in eine vorgelegte Verdrahtungsebene hinein aufgebaut werden.Diodes, triodes, tetrodes, pentodes, miniaturized accelerators and filters and other corpuscular beam optical arrangements can be built using this technique. Tips as field emission cathodes for electron emitters and for ion emitters can be used in other prefabricated circuits and tubes and the operating voltage required can thus be greatly reduced. With the help of electron beam-induced deposition, nanocrystalline composite material can be built with nanometer precision into nanoelectronic assemblies and circuits in a given wiring level.
Mit dieser neuartigen Technik, die neuartiges Material und Rechnersteuerung und Automatisierung benützt, können neuar- tige, bisher nicht erreichte Leistungen erreicht werden. Einige bevorzugte Ausführungsformen von Rohrensystemen, die auf einem isolierenden Medium auf in Planartechnik mit Lithographie vorgefertigten Leiterbahnstrukturen Feldemis- sions-Kathoden mit passivem Stromstabilisier-Wiαerstand aufgebaut sind, und denen gegenüber wenigstens eine Anode aus einem oder mehreren Drahten zugeordnet sind, sind:With this new technology, which uses new material and computer control and automation, new, unprecedented services can be achieved. Some preferred embodiments of tube systems which are built up on an insulating medium on conductor path structures prefabricated in planar technology with lithography using field current emission cathodes with a passive current stabilizing resistor and which are assigned at least one anode made of one or more wires are:
• eine Diode mit Feldelektronen-Emitter geschaltet und mit Elektronen betrieben,A diode with field electron emitter switched and operated with electrons,
• eine Diode als Ionen-Emitter geschaltet und mit H3O+- Ionen betrieben, (da an Luft alle Oberflachen mit Wasser überzogen sind und daher bei Feldstärken über IO7 Volt/cm die Feldionisation einsetzt und den Rohrenmnenwiderstand bestimmt) ,A diode connected as an ion emitter and operated with H 3 O + ions (since all surfaces are covered with water in air and therefore field ionization is used for field strengths above IO 7 volts / cm and the inner tube resistance is determined),
• eine Triode herkömmlicher Bauart, welche auch wieder mit Ionen oder Elektronen betrieben werden kann, bei der außer Kathode und Anode em Gitter in Form von einer oder mehreren Offnungen oder auch nur in Form von 2 Stäben ohne obere und untere Begrenzung des Feldes zwischen die beiden Elektroden geschaltet ist, • eine Tetrode bzw. Pentode, bei der dem ersten Gitter eins oder mehrere Gitter nachgeschaltet sind,• a triode of conventional design, which can also be operated again with ions or electrons, in which in addition to the cathode and anode em grid in the form of one or more openings or even only in the form of 2 rods without upper and lower limits of the field between the two Electrodes is connected, • a tetrode or pentode, in which one or more grids are connected downstream of the first grid,
• eine Tetrode bzw. Pentode, bei der dem ersten Gitter mehrere Gitter und Teilgitter nachgeschaltet sind, und die durch zwei Potentialzufuhrungen getrennt emschalt- bar sind, und dadurch zusätzlich auch noch em schnelles Schalten zwischen zwei gegeneinander isoliert angebrach¬ ten Anoden ermöglichen.• a tetrode or pentode, in which a plurality of gratings and partial gratings are connected downstream of the first grid and which can be switched separately by two potential feeds, and thereby additionally also enable fast switching between two anodes which are insulated from one another.
Alle diese Rohren können in maßigem Vakuum von 1 Torr betrieben werden, so daß die mittlere freie Weglange der Elektronen oder Ionen in dem Gas bei diesem Druck so ein¬ gestellt ist, daß die Rohre durch die Rohrendimensionen funktionsfähig wird.All of these tubes can be operated in a moderate vacuum of 1 Torr, so that the mean free path of the electrons or ions in the gas is set at this pressure such that the tubes become functional due to the tube dimensions.
Die Rohren können in einem evakuierten Gefäß hermetisch gekapselt und die elektrischen Zufuhrungen durch die Kapse- lung als Dunnfllm-Leitungen gefuhrt sein oder die elektri¬ schen Zufuhrungen sind durch die Wände der Kapselung als Durchfuhrungsdrahte in isolierend gefüllten Bohrungen ausgeführt.The tubes can be hermetically encapsulated in an evacuated vessel and the electrical feeds through the capsule be run as thin lines or the electrical leads are made through the walls of the encapsulation as lead-through wires in insulated filled bores.
Mehrere Rohren, 3a ganze Schaltungen können in einem größe¬ ren mit geeignetem Druck und Gas oder Wasser vom ausrei¬ chenden Partialdruck gefüllten Vakuumraum aufgebaut und hermetisch abgeschlossen sein und der Hohlraum kann mit einem eingebrachten Getterstoff konstant auf Vakuum gehal¬ ten werden, wie das in der Rohrentechnik üblich ist.Several tubes, 3a whole circuits can be built and sealed hermetically in a larger vacuum space filled with suitable pressure and gas or water from the sufficient partial pressure, and the cavity can be kept constant with a vacuum by means of a getter material, as shown in FIG the pipe technology is common.
Zur Erzielung eines geringeren Rohrenmnenwiderstandes und um den Emissionsstrom zu erhohen, können mehrere Elektro- nen- oder Ionen-Emitter parallel geschaltet sein.To achieve a lower internal tube resistance and to increase the emission current, several electron or ion emitters can be connected in parallel.
Die den Elektronen- oder Ionen-Emittern vorgeschalteten Widerstände zur passiven Stromregelung der Emitter können, entsprechend der Stellung m der Rohre, m ihrer Große so ausgebildet sein, daß die Feldstarkevariation m der Rohre ausgeglichen wird und gleichmäßige Strom-Emission aus den einzelnen Kathoden erzielt wird.The resistors for passive current control of the emitters connected upstream of the electron or ion emitters can, depending on the position m of the tubes, be designed in such a way that the field strength variation m of the tubes is compensated for and uniform current emission is achieved from the individual cathodes .
Mit der Korpuskularstrahl-mdizierten Deposition können leitfahige und isolierende Drahte in der Ebene und im Raum aufgebaut werden. Die Drahtdurchmesser sind ca. 0,1 μm, die Lange bis 10 μm. Die Drahte können 2 MA/crn^ große Strom¬ dichten vertragen. Der Wert ist 8 mal hoher als zum Beispiel bei Aluminium (250000 A/cm2) . Feldemission ist aus den Drahtspitzen möglich mit ca. 15-fach geringerem Innen¬ widerstand pro Emitter als bei herkömmlichen Feldemittern der Vakuummikroelektronik. Feldemitter-Elektronenquellen können mit dieser Technik mit eingebautem Strom-Stabili- sierwiderstand aufgebaut werden. Damit arbeitet jede Spitze unabhängig und kontrolliert und in ihrem Emissionsstrom passiv stabilisiert. Damit wird die Anforderung nach Redundanz an die Spitzen in der Rohre oder m die parallel angeordneten Emitter verringert.With the corpuscular beam-mediated deposition, conductive and insulating wires can be built up in the plane and in space. The wire diameter is approx. 0.1 μm, the length up to 10 μm. The wires can withstand 2 mA / cm 2 current densities. The value is 8 times higher than for example with aluminum (250000 A / cm2). Field emission is possible from the wire tips with approximately 15 times less internal resistance per emitter than with conventional field emitters in vacuum microelectronics. With this technology, field emitter electron sources can be built with a built-in current stabilizing resistor. Each tip works independently and in a controlled manner and passively stabilizes its emission current. So that the request for Redundancy at the tips in the tubes or m the parallel emitters reduced.
Die Drahte enden in einer sehr feinen Spitze mit Radien > 5 nm, aber mit nanometergroßen Kristallen, die aus der Spitze herausragen und dadurch eine Feldverstarkung bewirken. Das äußert sich in einer stark verringerten Extraktionsspannung für den Feld-Elektronen-Strom. Der Widerstand der deponier¬ ten Materialien ist über die Depositions-Bedmgungen im Bereich von 5 Größenordnungen einstellbar. Mit der rechner¬ gesteuerten Deposition werden 3-dιmensιonale Strukturen hergestellt, die als Elektrode für Mikro-Rohren und Rohren¬ systeme dienen, die einzelne Strahlen erzeugen, oder die vielmals nebeneinander hergestellt werαen können. Damit ist eine Technik gefunden, mit der vielfache Elektronenstrahlen auf lithographischen Schaltungen und Tragerplatinen herge¬ stellt werden können, die dann wiederum als Produktions¬ mittel für Depositions-Strukturen einsetzbar sind. Damit ist die Produktionstechnik gefunden, mit der Mikrorohren, Dynatron-Oszillatoren und schnelle verstärkende Schalter oder auch schnelle mit 100 GHz loschbare Digital-Speicher in paralleler Herstellungstechnik produziert werden können.The wires end in a very fine tip with radii> 5 nm, but with nanometer-sized crystals that protrude from the tip and thus cause a field strengthening. This manifests itself in a greatly reduced extraction voltage for the field electron current. The resistance of the deposited materials can be set in the range of 5 orders of magnitude via the deposition conditions. The computer-controlled deposition produces 3-dimensional structures which serve as electrodes for micro tubes and tube systems, which generate individual beams, or which can often be produced side by side. A technology has thus been found with which multiple electron beams can be produced on lithographic circuits and carrier boards, which in turn can then be used as production means for deposition structures. With this, the production technology has been found with which microtubes, Dynatron oscillators and fast amplifying switches or fast digital memories that can be erased with 100 GHz can be produced in parallel production technology.
Durch die Feinheit der Definition der Materialerzeugung bei der Korpuskularstrahl-mduzierten Deposition mit Rechner¬ steuerung können neuartige Rohren Bauelemente, Differenz- verstarker und Schaltungen ohne die Verwendung von Halb- leitermateπalien direkt aufgeschrieben werden. Diese Schaltungen können auf Grund der Kleinheit und der Nanome- terprazision bei höheren Frequenzen, als sie mit herkömm¬ lichen Rohren erreichbar sind, betrieben werden. Die Her¬ stellungstechnik für elektronische Schaltungen ist stark vereinfacht, die Packungsdichte stark erhöht.Due to the delicacy of the definition of material production in deposition with corpuscular beam-induced deposition with computer control, novel tubes, components, differential amplifiers and circuits can be written directly without the use of semiconductor materials. Because of the small size and the nanometer precision, these circuits can be operated at higher frequencies than can be achieved with conventional tubes. The manufacturing technology for electronic circuits is greatly simplified and the packing density is greatly increased.
Als erstes Anwendungsbeispiel zeigt Fig. 1 den Prinzipauf¬ bau für eine Diode, Triode und Ablenk-Tetrode mit THz- Schalteigenschaften. Bei der Ablenktetrode kann der Ver¬ stärkungsfaktor und eine überlagerte Schaltung auf 2 Anoden durchgeführt werden, was einen besonders stabilen Betrieb ermöglicht.As a first application example, FIG. 1 shows the basic structure for a diode, triode and deflection tetrode with THz Switching characteristics. With the deflection electrode, the amplification factor and a superimposed circuit can be carried out on 2 anodes, which enables particularly stable operation.
Die Fig. 2 zeigt oben eme Triode aus Kathode, Emitter und Anode und unten eine Triode aus mehreren Kathoden, Gitter und Anode zur Vergrößerung des Emissionsstromes und Ver¬ ringerung des Innenwiderstandes.FIG. 2 shows a triode made of cathode, emitter and anode at the top and a triode made of several cathodes, grating and anode at the bottom for increasing the emission current and reducing the internal resistance.
In Fig. 3 ist eine Mikro-Triode mit Potentialverlauf wie¬ dergegeben. Die Kathode liegt dabei auf 0 V, das Gitter auf 50 V und die Anode auf 60 v. Durch mehrere Gitter, die zwischen Kathode und Anode eingebaut werden, können Mehr- Elektrodenrohren, Beschleuniger und Verzogerer und andere Rohren aufgeoaut werden.3 shows a micro-triode with a potential profile. The cathode is at 0 V, the grid at 50 V and the anode at 60 V. Multiple electrodes that are installed between the cathode and anode can be used to thaw multi-electrode tubes, accelerators and decelerators and other tubes.
In Fig. 4 ist eine Mikro-Pentode aus Feldemitter-Kathode K, Gittern Gl bis G3 und Anode A mit Potentialen dargestellt.4 shows a micro pentode consisting of field emitter cathode K, grids G1 to G3 and anode A with potentials.
Bereits realisierte Aufbauten zu Trioden sind m Fig. 5 wiedergegeben. Hier ist der Aufbau zweier Mikro-Rohren dargestellt. Die Rohren sind in nicht optimierter Form mit Hilfe der Elektronenstrahl-mduzierten Deposition und Rechnersteuerung im Rasterelektronenmikroskop aufgebaut. Oben sind die beiden Rohren m Aufsicht und unten m Seitenansicht wiedergegeben.Structures already implemented to form triodes are shown in FIG. 5. The structure of two micro tubes is shown here. The tubes are constructed in a non-optimized form with the help of electron beam-induced deposition and computer control in the scanning electron microscope. Above the two pipes are shown m top view and below m side view.
Die Fig. 6 zeigt 2 Mikrorohren-Aufbauten aus platinhaltigem nanokristallmem Material im Schragbild. Das Bild zeigt die technische Machbarkeit für die Strukturierung mit Additiver Lithographie.6 shows 2 micro-tube structures made of platinum-containing nanocrystalline material in the oblique view. The picture shows the technical feasibility for structuring with additive lithography.
Die Fig. 5 und 6 zeigen den erstmaligen Aufbau der Anord- nung aus bestehenden Makros "FEBOGEN" und "STACIR" mit5 and 6 show the first time the arrangement of the existing macros "FEBOGEN" and "STACIR"
Hilfe der VIDAS Strahlsteuerung am JSM 840 F. Die Anoden- Drahte sind m 1 mm gewachsen. Durch Variation der Para¬ meter kann die Hoheneinstellung der Spitzenlage zum Gitter- Viereck noch optimiert werden. Durch Parametervariation im Makro "STACIR" kann em annähernd rundes Gitter erzeugt werden.VIDAS beam control on the JSM 840 F. Wires have grown to 1 mm. By varying the parameters, the height adjustment of the top position to the grid square can still be optimized. By varying the parameters in the "STACIR" macro, an approximately round grid can be created.
Durch geeignete Depositionsbedmgungen kann die die Spitze tragende Haarnadel als niederohmiges Heizelement und der die Spitze tragende Schaft als hochohmiger passiver Stabi- lisierwiderstand ausgebildet werden. Durch Hitzen derBy means of suitable deposition conditions, the hairpin carrying the tip can be designed as a low-resistance heating element and the shaft carrying the tip as a high-resistance passive stabilizing resistor. By heating the
Spitze können adsorbierte Gase desorbiert werden und die Emission im Betrieb stabilisiert werden. Dies wird auch durch andauernde Heizung oder gelegentliches "flashen", d. h. kurzes Aufheizen der Spitze erreicht, wobei die Spitze durch diese Verfahren in konventioneller Weise gereinigt wird.Peak adsorbed gases can be desorbed and the emissions stabilized during operation. This is also due to continued heating or occasional "flashing", i.e. H. the tip is heated briefly, the tip being cleaned in a conventional manner by these methods.
Die mit den Trioden erreichbaren Kenndaten lassen sich aus folgenden Daten ermitteln. Die Feldemitter-Rohre arbeitet bei 150 uA Emissionsstrom, bei einer Beschleunigungsspan¬ nung Ueχpr < 10 V. Dann betragt der Innenwiderstand ("transconductance") Rχ > 15 μS. Konventionelle Feldemitter kommen auf 1 - 2 μS ! . Die Feldemissions-Rohre kann auf verschiedene Weise geschaltet werden:The characteristic data that can be achieved with the triodes can be determined from the following data. The field emitter tube operates at 150 uA emission current, with an acceleration voltage U eχ r <10 V. Then the internal resistance ("transconductance") R χ > 15 μS. Conventional field emitters achieve 1 - 2 μS! , The field emission tubes can be switched in different ways:
1. Anlegen Schaltspannung auf die Extraktionsspannung an der Spitze von -Ueχp . Der Extraktor und die Anode sind dabei auf 0 V oder positiv.1. Apply switching voltage to the extraction voltage at the top of -U eχ p. The extractor and the anode are at 0 V or positive.
2. Anlegen der Schaltspannung auf den Extraktor auf +Uextr. Die Spitze liegt dabei auf 0 V.2. Apply the switching voltage to the extractor at + U ex t r . The peak is at 0 V.
3. Ablenkung des Strahles mit Ablenkplatten Up < 10 V, indem das Extraktionsgitter zweigeteilt wird und an die beiden Hälften unterschiedliche Spannungen angelegt werden. Dann wird der Strahl auf die beiden getrennt aufgebauten Anoden gelenkt (Schaltrohre mit Dauerstrahl) . Die zu ladende Speicherkapazität betragt C = eo*er*F/d = 8.86-10-12*!* (0.2*10_6)2/10-6 As/V = 3.5*10~18F.3. Deflection of the beam with deflection plates Up <10 V by dividing the extraction grid into two and applying different voltages to the two halves. Then the beam is directed onto the two separate anodes (switching tubes with continuous jet). The storage capacity to be loaded is C = eo * e r * F / d = 8.86-10 -12 *! * (0.2 * 10 _6 ) 2 / 10- 6 As / V = 3.5 * 10 ~ 18 F.
Bei einem Stabdurchmesser von 0.2 μm und einer Lange von 1 μm im Abstand von 1 μm und mit dem Dielektrikum von Vaku¬ um oder Luft er = 1 hat die Kapazität die Größe von 3.5 attoFarad. Um diese Kapazität auf 5 Volt Ablenkspannung zu laden, ist eine Ladung von Q = C*U = 1.6 • 10~17 As = lOOe = 100 Elektronen! erforderlich. Diese Ladung kann in 1 psec (1 THz) mit einem Strom von 16 uA aufgebracht werden. Der statistische Fehler ist dann 10% oder SN = 10 (entspricht dem Signal-Rausch-Verhältnis) .With a rod diameter of 0.2 μm and a length of 1 μm at a distance of 1 μm and with the dielectric of vacuum or air e r = 1, the capacity is 3.5 attoFarad. In order to charge this capacitance to a 5 volt deflection voltage, a charge of Q = C * U = 1.6 • 10 ~ 17 As = 100E = 100 electrons! required. This charge can be applied in 1 psec (1 THz) with a current of 16 uA. The statistical error is then 10% or SN = 10 (corresponds to the signal-to-noise ratio).
Das Schalten mit 0.1 ps kann bei 160 μA Entladestrom erfol- gen (Spannungspuls an der Extraktor-Röhre) . Damit übertref¬ fen diese ohne Halbleitermaterialien aufgebauten Rohren die aus III/V- oder II/VI-Halbleitern aufgebauten Schaltungen hinsichtlich ihrer Schaltgeschwindigkeit erheblich. Switching with 0.1 ps can take place at 160 μA discharge current (voltage pulse at the extractor tube). This means that these tubes, which are constructed without semiconductor materials, considerably exceed the switching speed of circuits made of III / V or II / VI semiconductors.

Claims

Patentansprüche: Claims:
1. Rohrensysteme, bestehend aus Mehrelektroden-Anordnungen mit beliebigen Kombinationen von Elektroden, Ver¬ bindungen und Funktionen, die in einem evakuierten Gefäß hermetisch abgeschlossen gekapselt sind, d a d u r c h g e k e n n z e i c h n e t , daß die Elektroden und deren Abstände so klein gewählt sind, daß im Mittel nur eine mittlere freie Weglange der Moleküle bei Normaldruck zwischen die Emitter und Anoden-Elektrode paßt, daß dabei die Spannung zufuhren¬ den Elektroden dick und die Leiterbahnen weit auseinan¬ der ausgeführt, die Kathoden/Emitter in Nadelform nano- kristallm bzw. als Superspitzen auf stumpfe vorgefer¬ tigte Spitzen bzw. Elektroden aufgesetzt ausgebildet sind, und daß die evakuierten Gefäße Restgase besonders definierter Arten und Druckbereiche enthalten.1. Pipe systems consisting of multi-electrode arrangements with any combination of electrodes, connections and functions, which are hermetically sealed in an evacuated vessel, characterized in that the electrodes and their spacings are chosen so small that on average only a medium one The free path of the molecules at normal pressure fits between the emitter and anode electrode, that the voltage supplying electrodes are thick and the interconnects are wide apart, the cathodes / emitters in needle form are nano-crystalline or prefabricated as super tips on blunt ones Tigt tips or electrodes are formed and that the evacuated vessels contain residual gases of particularly defined types and pressure ranges.
2. Rohrensysteme nach Anspruch 1, dadurch gekennzeichnet, daß Rohrensysteme unterschiedlicher Betriebsarten durch unterschiedliche Ergänzungen mit Gittern, Anoden und anderen mtegrationsfahigen Bauelementen, sowie durch Trennung in über Durchfuhrungen verbundene Teilgefaße miteinander verbunden sind.2. Pipe systems according to claim 1, characterized in that pipe systems of different operating modes are connected to one another by different additions with grids, anodes and other components capable of integration, and by separation into sub-vessels connected by leadthroughs.
3. Herstellungsverfahren für Rohrensysteme, d a d u r c h g e k e n n z e i c h n e t, daß auf emem m Planar¬ technik mit Lithographie vorgefertigten isolierenden Medium mittels rechnergesteuerter Korpuskularstrahl- mduzierten Deposition in teils gleichzeitigen und teils aufeinanderfolgenden Schritten mit Nanometer- Präzision nanokristallines Verbundmateπal zu nanoelek- tromschen Baugruppen und Schaltungen in eine vorgeleg¬ te Verdrahtungsebene hinein aufgebaut werden, die zuletzt in ein Gefaßsystem eingeschlossen werden wah¬ rend gleichzeitig die Betriebsart der Rohren mittels der Art und des Druckes der Restgase bestimmt wird.3. Manufacturing process for pipe systems, characterized in that on emem m planar technology with lithography prefabricated insulating medium by means of computer-controlled corpuscular beam-induced deposition in partly simultaneous and partly successive steps with nanometer precision nanocrystalline composite material to nanoelectrical Tromschen assemblies and circuits are built into a given wiring level, which are finally included in a vessel system, while at the same time the operating mode of the tubes is determined by means of the type and pressure of the residual gases.
4. Herstellungsverfahren für Rohrensysteme nach Anspruch4. Manufacturing process for pipe systems according to claim
3, dadurch gekennzeichnet, daß Rohren als Ionen-Emitter verwendet und mit H30+-Ionen betrieben werden, indem ungetrocknete bzw. aus einem Vorrat gezielt befeuchtete3, characterized in that tubes are used as ion emitters and are operated with H30 + ions by specifically drying undried or from a supply
Restgase verwendet werden, bis bei Feldstarken über IO7 Volt/cm die Feldionisation einsetzt und den Rohrenm- nenwiderstand bestimmt. Residual gases are used until field ionization sets in at field strengths above IO 7 volts / cm and the tube internal resistance is determined.
PCT/DE1997/000427 1996-03-09 1997-03-03 Electronic tube system and method of manufacturing same WO1997033295A2 (en)

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