WO1997021253A1 - Agencement de contact d'un module solaire - Google Patents

Agencement de contact d'un module solaire Download PDF

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Publication number
WO1997021253A1
WO1997021253A1 PCT/AU1996/000793 AU9600793W WO9721253A1 WO 1997021253 A1 WO1997021253 A1 WO 1997021253A1 AU 9600793 W AU9600793 W AU 9600793W WO 9721253 A1 WO9721253 A1 WO 9721253A1
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WO
WIPO (PCT)
Prior art keywords
layer
solar cell
deposit
cell module
type
Prior art date
Application number
PCT/AU1996/000793
Other languages
English (en)
Other versions
WO1997021253B1 (fr
Inventor
David Christopher Thorp
Original Assignee
Unisearch Ltd
David Christopher Thorp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisearch Ltd, David Christopher Thorp filed Critical Unisearch Ltd
Priority to AU10258/97A priority Critical patent/AU1025897A/en
Publication of WO1997021253A1 publication Critical patent/WO1997021253A1/fr
Publication of WO1997021253B1 publication Critical patent/WO1997021253B1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell contacting scheme and, more particularly, to a method and means of interconnecting PN junctions on the one substrate.
  • the invention is applicable, although not exclusively so, to thin film solar cell technology.
  • the pipe is to be given a purposive construction. So, for example, the pipe can be of any cross-section in a plane of the semiconductor layers including by way of example circular, square, elongate oval, rectangular and the like.
  • a solar cell module of the type comprising at least a first layer of a semiconductor of a first conductivity type and at least a second layer of a semiconductor of a second conductivity type, a method of insulating 0 and interconnecting said layers so as to form a plurality of series connected solar cells.
  • said step of insulating said layers is performed by a discontinuity in said at least first layer and said at least second layer.
  • said step o interconnecting is performed by means of a segmented conducting layer.
  • said layer is in the form of a plane
  • said step of interconnecting further includes providing at least a first conductive pipe of said first conductivity type and at least a second conductive pipe of said second conductivity type adapted to respectively connect said at least one layer of said first conductivity type to a segment of said segmented conducting plane and also connect said at least one layer of said second conductivity type to said segment of said segmented conducting plane so as to forma series connection between adjacent solar cells of said solar cell module.
  • said step of interconnecting further includes providing at least a first conductive groove of said first conductivity type and at least a second conductive groove of said second conductivity type adapted to respectively connect said at least one layer of said first conductivity type to a segment of said segmented conducting plane and also connect said at leat one layer of said second conductivity type to said segment of said segmented conducting plane so as to form a series connection between adjacent solar cells of said solar cell module.
  • said solar cell module comprises a plurality of stacked pairs of said at least first layer of a semiconductor of a first conductivity type.
  • said solar cell module is a thin film solar cell module.
  • said solar cell module is a silicon solar cell module
  • said solar cell module is a polysilicon solar cell module.
  • segmented conducting layer comprises a segmented metallic laye
  • segmented conducting layer is spaced from said at least first layer and said at least second layer by at least one electrically insulating layer.
  • Figures 1-8 illustrate steps in the preparation of a rear point contacting scheme according to a first embodiment ofthe invention
  • Figures 9-13 illustrate steps in an alternative rear point contacting scheme for a metal substrate according to a second embodiment ofthe invention
  • Figures 14-21 illustrate the steps in formation of a rear point contacting scheme for a glass superstrate according to a third embodiment ofthe invention
  • Figures 22-26 illustrate an alternative rear point contacting scheme for a metal substrate according to a fourth embodiment ofthe invention
  • Figures 27, 28 support a comparison of two versions ofthe present invention, one using isolated pipes and the other utilising continuous grooves for conduction to the segmented conducting 5 layer;
  • Figure 29 is a generalised three dimensional, cut-away view of the solar cell contacting scheme suitable for use with any ofthe above described embodiments
  • Figure 30 is a three dimensional, cut away view ofthe solar cell contacting scheme of Figure 8
  • Figure 31 illustrates methods of contacting pipe walls to to the conducting plane using a conductor (rather than a semi-conductor) Detailed Description of Preferred Embodiments
  • the solar cell comprises at least a first layer (1 1) of N-type material, a second layer (12) of P type material and a third layer (13) of N-type material
  • N-type material layers (I I, 13) are interconnected vertically by means of N-type 15 pipes (14, 14, 16, 17, 18, 19) These pipes then connect the layers vertically downwardly to a segment (20) of a segmented conducting layer, in this instance comprising a deposited metallisation.
  • each segment (20, 27) is electrically isolated via separation (28)
  • Figure 30 shows a corresponding layout based on the arrangement of Figure 8 (refer below)
  • substrate could be conducting (eg metal sheet), coated with an insulating di-electric layer.
  • a glass .r ⁇ perstrate could be used with a transparent conducting oxide (TCO) instead of metal. This would result in a bi-facial cell (although with a less effective 10 conductor & reflector)
  • the varying depth ofthe hoes indicates the tolerance in manufacturing. If the p + doping density required for a good contact is greater than that wanted in the device layer, then deposition should start initially with high doping and then reduce. It may be
  • the thin highly doped layer prefferably be outside the depletion region, in which case lower doped p type silicon should be deposited before the formation of the contact holes This would also avoid the interruption of deposition which without ultra high vacuum may result in the formation of defects right at the most critical point (the metallurgical p-n junction). 5 Laser ablation of holes through to metal, followed by n + silicon deposition (refer figure
  • n type silicon more lightly doped n type silicon than that required for the contacts may be deposited before the holes are formed
  • a thin, heavily doped silicon layer at the tip surface will be beneficial to voltage anyway
  • do step 5 before step 4 n before p holes
  • deposit final n layer Note if holes have a large diameter they may not be filled as shown, but rather lined. If hole diameter is comparable to the cell thickness, then forming holes at an angle will reduce or eliminate the "shading" loss (refer figure 5)
  • a globular metal or TCO layer deposited in step 1 could perform this function
  • metal layer Since metal covers the whole area, resistance along the fingers that run the full length of the module should not be great A crude calculation would suggest that the metal layer would need to be only 9 ⁇ m thick to carry the current along a lm long module (Buried contacts in wafer cells are spaced 1.2mm apart, have a cross sectional area of about 900 ⁇ m 2 (25x35 ⁇ m) and carry the current over 10cm lm would require 9000 ⁇ m 2 , which gives a thickness of 9 ⁇ m for 1mm wide fingers) If metal layer is too thin (or TCO is uses) then a slightly more complicated contact scribe (step 1 ) would be necessary (eg as described in contact scheme #2a for glass superstrates, refer figures 20 and 21)
  • the metal line scribe requires accurate depth control It could be done by covering the rear of the metal with any material that is not etched by a metal etchant, laser or mechanical scribing this material and then chemically etching the exposed metal
  • the encapsulate is the supporting layer once the continuity ofthe metal 15 substrate is broken
  • n + and p + layers are not active layers in the solar cell and so do not have to 30 be of good electronic quality, the quality of the junction between them is of no importance as they are shorted together by the metal layer anyway The reason for their blanket coverage of the whole area is simply because this is technically easier than selective deposition on to the silicon contact areas that are exposed after hole formation
  • the encapsulant is the supporting layer once the continuity ofthe metal 20 substrate is broken
  • doping ofthe contacting layers can by chosen independently ofthe doping of the active layers
  • the isolation lines (for individual cells) scribed through the silicon do not carry 25 current, they can be made as narrow as the laser beam can be focussed, so reducing
  • rear point contact scheme has lower alignment requirements - with buried contacts, the n grooves must be precisely aligned to the p grooves for series connection • Laser grooving and doping must be done in a vacuum chamber with a doping gas atmosphere No chamber is necessary for the rear point contact scheme, though possibly helpful for sucking out debris
  • the other source of series resistance in the rear point contact scheme is in the current flow along the p + and n + silicon conductive pips/ holes, from the front to rear of the cell
  • the thickness of these pipe walls equals that ofthe final active layer (ie the emitter for n type material) and for the above hole layout the cross sectional area increasing the line spacing by the thickness of the device (this is the worst case for a single junction device)
  • Thin film devices are likely to be only 5-10 ⁇ m thick, whilst contact spacing is typically 500-1000 ⁇ m, so the additional series resistance will only be about 1% of that in the active layers
  • the walls of the conductive pipes are formed by separate silicon deposition processes and could be doped to a conductivity 10-100 times higher than in the active layers Even with a thickness 10 times less than that of the active emitter (eg 0 l ⁇ m instead of l ⁇ m), the series resistance losses would be less than 1% of that in the active layers
  • the optimum efficiency layout of holes would be more widely spaced within a line, with more closely spaced lines, resulting in lower shading losses and/or resistive losses
  • more closely spaced lines would increase the number of scribes and total scribing time
  • a transparent conducting oxide was used in place of the rear metal, along with a separate detached reflector eg 20 ⁇ m wide lines spaced 200 ⁇ m apart in the reflecting contact metal would represent a degraded are of 10%
  • the buried contact scheme also has the disadvantage of requiring a certain minimum line width in order to fill the groove with sufficient metal to reduce finger resistance
  • the groove width may need to be significantly increased beyond the 20 ⁇ m used in these devices
  • decreasing the hole width as far as technically possible, and reducing the spacing of holes will continually increase the efficiency ofthe rear point contact scheme
  • the rear point contact scheme will have at least half the shading losses ofthe

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Cette invention concerne un agencement de contact, conçu pour isoler et interconnecter les couches d'un module solaire (10), qui forme une pluralité de cellules solaires reliées en série. Des couches de matériau du type N (11, 13) sont interconnectées verticalement au moyen de tubes du type N (14-19). Ces tubes sont ensuite reliés à un segment (20) d'une couche conductrice. Une couche de matériau du type P (12) est connectée, de manière à assurer la conduction, à un autre segment (27) de la couche conductrice par l'intermédiaire de tubes du type P (21-26). Chaque segment (20, 27) est isolé électriquement par le biais d'une séparation (28). Des regroupements individuels de jonctions P/N sont isolés au moyen d'une discontinuité (29) disposée à travers les couches de la fine cellule solaire (10) de type film. Cet agencement de contact convient à la fois aux substrats opaques et aux substrats non opaques.
PCT/AU1996/000793 1995-12-07 1996-12-06 Agencement de contact d'un module solaire WO1997021253A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU10258/97A AU1025897A (en) 1995-12-07 1996-12-06 Solar cell contacting scheme

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPN7038 1995-12-07
AUPN7038A AUPN703895A0 (en) 1995-12-07 1995-12-07 Solar cell contacting machine

Publications (2)

Publication Number Publication Date
WO1997021253A1 true WO1997021253A1 (fr) 1997-06-12
WO1997021253B1 WO1997021253B1 (fr) 1997-07-17

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PCT/AU1996/000793 WO1997021253A1 (fr) 1995-12-07 1996-12-06 Agencement de contact d'un module solaire

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WO (1) WO1997021253A1 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1081770A1 (fr) * 1999-09-01 2001-03-07 Kaneka Corporation Module de cellule solaire en couche mince et sa méthode de fabrication
WO2003019674A1 (fr) * 2001-08-23 2003-03-06 Pacific Solar Pty Limited Structure d'interconnexion metallique a maillons de chaine
FR2877144A1 (fr) * 2004-10-22 2006-04-28 Solarforce Soc Par Actions Sim Structure multicouche monolithique pour la connexion de cellules a semi-conducteur
EP1926150A1 (fr) * 2006-11-21 2008-05-28 Palo Alto Research Center Incorporated Dispositif multiposte d'ablation par laser
WO2010012259A2 (fr) * 2008-07-30 2010-02-04 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Module solaire à couche mince en contact d'un côté et comprenant une couche de contact intérieure
EP2328182A1 (fr) * 2009-11-27 2011-06-01 S'Tile Module photovoltaïque comportant des cellules photovoltaïques intégrées
CN102257623A (zh) * 2008-12-19 2011-11-23 Q-电池公司 太阳能电池
US8105923B2 (en) 2003-04-14 2012-01-31 Centre National De La Recherche Scientifique Sintered semiconductor material
US8168545B2 (en) 2006-12-12 2012-05-01 Solarworld Innovations Gmbh Solar cell fabrication using extruded dopant-bearing materials
US8192648B2 (en) 2003-04-14 2012-06-05 S'tile Method for forming a sintered semiconductor material
US8405183B2 (en) 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
WO2013103460A1 (fr) * 2012-01-04 2013-07-11 Esi-Pyrophotonics Lasers Inc. Procédé et structure permettant d'utiliser des lignes de découpe laser discontinues
US9493358B2 (en) 2003-04-14 2016-11-15 Stile Photovoltaic module including integrated photovoltaic cells
US9741881B2 (en) 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0201312A2 (fr) * 1985-05-03 1986-11-12 Siemens Solar Industries L.P. Interconnexion de cellules solaires au moyen de régions conductrices discontinues
US4626613A (en) * 1983-12-23 1986-12-02 Unisearch Limited Laser grooved solar cell
CA2024662A1 (fr) * 1989-09-08 1991-03-09 Robert Oswald Module photovoltaique monolithique a elements montes en serie et en parallele
WO1993012543A1 (fr) * 1991-12-09 1993-06-24 Unisearch Limited Contact noye, couche mince interconnectee et generateur photovoltaique
EP0618623A2 (fr) * 1993-03-29 1994-10-05 Siemens Aktiengesellschaft Procédé de fabrication d'une cellule solaire à partir d'un substrat
US5391236A (en) * 1993-07-30 1995-02-21 Spectrolab, Inc. Photovoltaic microarray structure and fabrication method
US5421908A (en) * 1992-12-28 1995-06-06 Fuji Electric Co., Ltd. Thin-film solar cell and method for the manufacture thereof
US5468652A (en) * 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626613A (en) * 1983-12-23 1986-12-02 Unisearch Limited Laser grooved solar cell
EP0201312A2 (fr) * 1985-05-03 1986-11-12 Siemens Solar Industries L.P. Interconnexion de cellules solaires au moyen de régions conductrices discontinues
CA2024662A1 (fr) * 1989-09-08 1991-03-09 Robert Oswald Module photovoltaique monolithique a elements montes en serie et en parallele
WO1993012543A1 (fr) * 1991-12-09 1993-06-24 Unisearch Limited Contact noye, couche mince interconnectee et generateur photovoltaique
US5421908A (en) * 1992-12-28 1995-06-06 Fuji Electric Co., Ltd. Thin-film solar cell and method for the manufacture thereof
EP0618623A2 (fr) * 1993-03-29 1994-10-05 Siemens Aktiengesellschaft Procédé de fabrication d'une cellule solaire à partir d'un substrat
US5468652A (en) * 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell
US5391236A (en) * 1993-07-30 1995-02-21 Spectrolab, Inc. Photovoltaic microarray structure and fabrication method

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1081770A1 (fr) * 1999-09-01 2001-03-07 Kaneka Corporation Module de cellule solaire en couche mince et sa méthode de fabrication
US6469242B1 (en) 1999-09-01 2002-10-22 Kaneka Corporation Thin-film solar cell module and method of manufacturing the same
US7868248B2 (en) 2001-08-23 2011-01-11 Pacific Solar Pty Limited Chain link metal interconnect structure
JP2005500701A (ja) * 2001-08-23 2005-01-06 パシフィック ソーラー ピー ティ ワイ リミテッド チェーンリンク金属相互接続構造
WO2003019674A1 (fr) * 2001-08-23 2003-03-06 Pacific Solar Pty Limited Structure d'interconnexion metallique a maillons de chaine
US9741881B2 (en) 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
US9493358B2 (en) 2003-04-14 2016-11-15 Stile Photovoltaic module including integrated photovoltaic cells
US8105923B2 (en) 2003-04-14 2012-01-31 Centre National De La Recherche Scientifique Sintered semiconductor material
US8405183B2 (en) 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
US8192648B2 (en) 2003-04-14 2012-06-05 S'tile Method for forming a sintered semiconductor material
FR2877144A1 (fr) * 2004-10-22 2006-04-28 Solarforce Soc Par Actions Sim Structure multicouche monolithique pour la connexion de cellules a semi-conducteur
WO2006045968A1 (fr) * 2004-10-22 2006-05-04 Solarforce Structure multicouche monolithique pour la connexion de cellules a semi-conducteur
EP1926150A1 (fr) * 2006-11-21 2008-05-28 Palo Alto Research Center Incorporated Dispositif multiposte d'ablation par laser
US8168545B2 (en) 2006-12-12 2012-05-01 Solarworld Innovations Gmbh Solar cell fabrication using extruded dopant-bearing materials
US8884154B2 (en) 2008-07-30 2014-11-11 Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh Thin-film solar module contacted on one side and having an inner contact layer
WO2010012259A3 (fr) * 2008-07-30 2010-09-16 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Module solaire à couche mince en contact d'un côté et comprenant une couche de contact intérieure
WO2010012259A2 (fr) * 2008-07-30 2010-02-04 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Module solaire à couche mince en contact d'un côté et comprenant une couche de contact intérieure
US20110284064A1 (en) * 2008-12-19 2011-11-24 Q-Cells Se Solar cell
CN102257623A (zh) * 2008-12-19 2011-11-23 Q-电池公司 太阳能电池
FR2953330A1 (fr) * 2009-11-27 2011-06-03 Tile S Module photovoltaique comportant des cellules photovoltaiques integrees
EP2328182A1 (fr) * 2009-11-27 2011-06-01 S'Tile Module photovoltaïque comportant des cellules photovoltaïques intégrées
WO2013103460A1 (fr) * 2012-01-04 2013-07-11 Esi-Pyrophotonics Lasers Inc. Procédé et structure permettant d'utiliser des lignes de découpe laser discontinues
US8841157B2 (en) 2012-01-04 2014-09-23 Esi-Pyrophotonics Lasers Inc Method and structure for using discontinuous laser scribe lines

Also Published As

Publication number Publication date
AU1025897A (en) 1997-06-27
AUPN703895A0 (en) 1996-01-04

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