WO1997012387A3 - Leiterrahmen für integrierte schaltungen - Google Patents

Leiterrahmen für integrierte schaltungen Download PDF

Info

Publication number
WO1997012387A3
WO1997012387A3 PCT/DE1996/001847 DE9601847W WO9712387A3 WO 1997012387 A3 WO1997012387 A3 WO 1997012387A3 DE 9601847 W DE9601847 W DE 9601847W WO 9712387 A3 WO9712387 A3 WO 9712387A3
Authority
WO
WIPO (PCT)
Prior art keywords
mounting frame
supporting element
integrated circuits
semiconductor chip
base surface
Prior art date
Application number
PCT/DE1996/001847
Other languages
English (en)
French (fr)
Other versions
WO1997012387A2 (de
Inventor
Tat-Choon Chua
Guan-Hin Heng
Patricia-Choon-Muah Lee
Charles-Wee-Ming Lee
Guenter-Paul Mayer
Klaus Mueller
Chu-Siu Ng
Original Assignee
Siemens Ag
Chua Tat Choon
Heng Guan Hin
Lee Patricia Choon Muah
Lee Charles Wee Ming
Mayer Guenter Paul
Klaus Mueller
Ng Chu Siu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Chua Tat Choon, Heng Guan Hin, Lee Patricia Choon Muah, Lee Charles Wee Ming, Mayer Guenter Paul, Klaus Mueller, Ng Chu Siu filed Critical Siemens Ag
Publication of WO1997012387A2 publication Critical patent/WO1997012387A2/de
Publication of WO1997012387A3 publication Critical patent/WO1997012387A3/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)

Abstract

Der Leiterrahmen für integrierte Schaltungen weist einen metallischen Grundkörper mit einem mittig angeordneten, einstückigen Trägerelement (2), auf das ein Halbleiterchip (3) aufgesetzt wird, und eine Vielzahl von um das Trägerelement (2) herum angeordneten Leiterbahnen (6) auf. Die effektive Grundfläche des Trägerelementes (2) ist kleiner als die Grundfläche des aufzusetzenden Halbleiterchips. Dies wird durch in das Trägerelement (2) eingearbeitete Öffnungen (8) und/oder Aussparungen (9) erreicht, welche von dem aufzusetzenden Halbleiterchip (3) überdeckt werden. Mit einem solchen Leiterrahmen können die mechanischen Spannungen und die durch die unerwünschte Oxidation des Leiterrahmens häufig zu beobachtende Delamination vermieden werden.
PCT/DE1996/001847 1995-09-29 1996-09-26 Leiterrahmen für integrierte schaltungen WO1997012387A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1995136525 DE19536525B4 (de) 1995-09-29 1995-09-29 Leiterrahmen für integrierte Schaltungen
DE19536525.9 1995-09-29

Publications (2)

Publication Number Publication Date
WO1997012387A2 WO1997012387A2 (de) 1997-04-03
WO1997012387A3 true WO1997012387A3 (de) 1997-06-12

Family

ID=7773710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1996/001847 WO1997012387A2 (de) 1995-09-29 1996-09-26 Leiterrahmen für integrierte schaltungen

Country Status (2)

Country Link
DE (1) DE19536525B4 (de)
WO (1) WO1997012387A2 (de)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117249A (ja) * 1982-12-24 1984-07-06 Hitachi Hokkai Semiconductor Kk リ−ドフレ−ム
US5021864A (en) * 1989-09-05 1991-06-04 Micron Technology, Inc. Die-mounting paddle for mechanical stress reduction in plastic IC packages
US5021865A (en) * 1988-09-08 1991-06-04 Mitsubishi Denki Kabushiki Kaisha Lead frame for semiconductor device
JPH0422162A (ja) * 1990-05-17 1992-01-27 Hitachi Ltd リードフレームおよびそれを用いた半導体集積回路装置
JPH04133454A (ja) * 1990-09-26 1992-05-07 Ibiden Co Ltd リードフレーム
JPH04139864A (ja) * 1990-10-01 1992-05-13 Seiko Epson Corp 半導体装置
US5126820A (en) * 1985-02-01 1992-06-30 Advanced Micro Devices, Inc. Thermal expansion compensated metal lead frame for integrated circuit package
US5233222A (en) * 1992-07-27 1993-08-03 Motorola, Inc. Semiconductor device having window-frame flag with tapered edge in opening
JPH0621317A (ja) * 1992-07-02 1994-01-28 Seiko Epson Corp 半導体パッケージの製造方法
US5327008A (en) * 1993-03-22 1994-07-05 Motorola Inc. Semiconductor device having universal low-stress die support and method for making the same
US5378656A (en) * 1992-03-27 1995-01-03 Hitachi, Ltd. Leadframe, semiconductor integrated circuit device using the same, and method of and process for fabricating the same
US5429992A (en) * 1994-05-25 1995-07-04 Texas Instruments Incorporated Lead frame structure for IC devices with strengthened encapsulation adhesion

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04252060A (ja) * 1991-01-10 1992-09-08 Fujitsu Ltd 半導体装置
US5389577A (en) * 1992-08-31 1995-02-14 Sgs-Thomson Microelectronics, Inc. Leadframe for integrated circuits
DE4311872C2 (de) * 1993-04-10 1998-07-02 Heraeus Gmbh W C Leiterrahmen für integrierte Schaltungen

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117249A (ja) * 1982-12-24 1984-07-06 Hitachi Hokkai Semiconductor Kk リ−ドフレ−ム
US5126820A (en) * 1985-02-01 1992-06-30 Advanced Micro Devices, Inc. Thermal expansion compensated metal lead frame for integrated circuit package
US5021865A (en) * 1988-09-08 1991-06-04 Mitsubishi Denki Kabushiki Kaisha Lead frame for semiconductor device
US5021864A (en) * 1989-09-05 1991-06-04 Micron Technology, Inc. Die-mounting paddle for mechanical stress reduction in plastic IC packages
JPH0422162A (ja) * 1990-05-17 1992-01-27 Hitachi Ltd リードフレームおよびそれを用いた半導体集積回路装置
JPH04133454A (ja) * 1990-09-26 1992-05-07 Ibiden Co Ltd リードフレーム
JPH04139864A (ja) * 1990-10-01 1992-05-13 Seiko Epson Corp 半導体装置
US5378656A (en) * 1992-03-27 1995-01-03 Hitachi, Ltd. Leadframe, semiconductor integrated circuit device using the same, and method of and process for fabricating the same
JPH0621317A (ja) * 1992-07-02 1994-01-28 Seiko Epson Corp 半導体パッケージの製造方法
US5233222A (en) * 1992-07-27 1993-08-03 Motorola, Inc. Semiconductor device having window-frame flag with tapered edge in opening
US5327008A (en) * 1993-03-22 1994-07-05 Motorola Inc. Semiconductor device having universal low-stress die support and method for making the same
US5429992A (en) * 1994-05-25 1995-07-04 Texas Instruments Incorporated Lead frame structure for IC devices with strengthened encapsulation adhesion

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 008, no. 235 (E - 275) 27 October 1984 (1984-10-27) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 185 (E - 1197) 6 May 1992 (1992-05-06) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 403 (E - 1254) 26 August 1992 (1992-08-26) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 415 (E - 1257) 2 September 1992 (1992-09-02) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 225 (E - 1541) 22 April 1994 (1994-04-22) *

Also Published As

Publication number Publication date
DE19536525A1 (de) 1997-04-03
DE19536525B4 (de) 2005-11-17
WO1997012387A2 (de) 1997-04-03

Similar Documents

Publication Publication Date Title
EP0862211A3 (de) Halbleiteranordnung und Herstellungsverfahren dafür
MY117421A (en) Integral design features for heatsink attach for electronic packages
DE69031257D1 (de) Integrierte Schaltung, die an der Oberfläche eines Halbleitersubstrats angeordnet ist, und Verfahren zur Herstellung derselben
EP0398721A3 (de) Dünne Kupferfolie für eine gedruckte Schaltungsplatte sowie Verfahren zu ihrer Herstellung
GB2232829B (en) Semiconductor integrated circuit
TW360909B (en) Spherical shaped semiconductor integrated circuit
EP0643404A3 (de) Induktive Strukturen für halbleitende integrierte Schaltungen.
WO2002103755A3 (en) Semiconductor die including conductive columns
EP0611129A3 (de) Eingebettetes Substrat für integrierte Schaltungsmodule.
IT1236637B (it) Substrato ceramico con fori passanti riempiti con metallo per microcircuiti ibridi e procedimento per fabbricare il medesimo.
ATE352870T1 (de) Halbleiterchipanordnung und verfahren zu ihrer herstellung
EP0586890A3 (en) Etching processes for avoiding edge stress in semiconductor chip solder bumps
ES2051297T3 (es) Tecnica de produccion de circuitos integrados personalizados.
MY123249A (en) A semiconductor device and a method of manufacturing the same and an electronic device
EP0410473A3 (en) Semiconductor integrated circuit
EP2287897A3 (de) Schaltelement für ein Halbleiterbauelement, Halbleiterbauelement damit und Verfahren zur Herstellung dieses Schaltelements und dieses Halbleiterbauelementes
EP0810655A3 (de) Eine Packung für eine Halbleiteranordnung
CA2173739A1 (en) Active Metal Metallization of Mini-Igniters by Silk Screening
HK1069010A1 (en) Lead frame and its manufacturing method
DE69501690D1 (de) Elektroplattierungslösung zur Herstellung von Elektrodenhöckern aus Pb-Sn Legierungen auf der Oberfläche von Halbleiterwafern
EP0814510A3 (de) Filmträger und in einer Halbleiteranordnung verwendete Filmträger
EP0625822A3 (de) Halbleiterintegrierte Schaltung.
EP0503072A4 (en) Semiconductor device and its manufacturing process
GB9305614D0 (en) Oscillator circuit die on ceramic substrate
GB2229833B (en) Semiconductor integrated circuit

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

AK Designated states

Kind code of ref document: A3

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase