WO1997009743A1 - Photodiode pin a zone detecteur elliptique - Google Patents

Photodiode pin a zone detecteur elliptique Download PDF

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Publication number
WO1997009743A1
WO1997009743A1 PCT/US1996/014366 US9614366W WO9709743A1 WO 1997009743 A1 WO1997009743 A1 WO 1997009743A1 US 9614366 W US9614366 W US 9614366W WO 9709743 A1 WO9709743 A1 WO 9709743A1
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WO
WIPO (PCT)
Prior art keywords
detector
area
section
cross
photodetector
Prior art date
Application number
PCT/US1996/014366
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English (en)
Inventor
Randall Brian Wilson
Original Assignee
The Whitaker Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Whitaker Corporation filed Critical The Whitaker Corporation
Publication of WO1997009743A1 publication Critical patent/WO1997009743A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier

Definitions

  • the invention relates to a P-I-N photodetector for use in optical communications.
  • Optical frequency communications have evolved greatly over the past couple of decades, but there is a need to increase the capabilities of data transmission.
  • the switching speeds of the digital signals themselves must be great.
  • the faster the switching speed of the digital pulse required the less the tolerance for the ill-effects of RC transients that are often intrinsic properties of the semiconductor transmitters and detectors.
  • One major component of the transient "tails" is the intrinsic capacitance of the device. As is obvious, it is important to high data rate transmission (fast rise and fall times) to reduce as greatly as is possible the intrinsic capacitance of a device in the transmission link.
  • the gain- bandwidth product is nearly equal to the bandwidth itself, the intrinsic bandwidth determined by the transit time of electron-hole pairs, and accordingly by the thickness of the intrinsic layer. Accordingly, the thickness of the intrinsic layer's effect on absorption efficiency must be balanced against its ill-effect on time of transit.
  • the practical bandwidth of the PIN detector and first input stage, which comprise the optical receiver can be limited by the RC time constant.
  • the RC time constant is a known quantity to the skilled artisan, and C is the capacitance of the PIN detector and R is the effective input impedance of the pre-amplifier. It is desirable to make C as low a value as possible to maximize the RC limited bandwidth, while retaining design flexibility in the input impedance parameter R.
  • the PIN detector is intrinsically a capacitor.
  • the capacitance C arises primarily from the junction capacitance, which is proportional to the area of the active region.
  • parasitic capacitance can be the result of additional bonding pads located away from the active region.
  • Parasitic capacitance from offset bonding pads can be significant, noticeably reducing the receiver bandwidth.
  • the intrinsic RC transients affect the performance of the device in its switching speed. In a digital signal, this is manifested as an exponential tail in the time domain, and as a reduction in the bandwidth in the frequency domain. Accordingly, these effects result in reduction of signal capacity at higher frequencies, as well as a reduction in square wave definition. The latter is a result of the fact that square wave definition is greater the greater the number of Fourier components that define the square wave. Since the higher frequency components are lost due to intrinsic capacitance, the definition in the square wave is lost as well.
  • One approach to reducing the detector capacitance is to reduce the area of the detector, since the capacitance, and thus the deleterious effects of the RC time constant, is proportional to the detector area and will be accordingly reduced.
  • this approach is limited by the finite width intensity distribution of the optical beam impinging on the photodetector.
  • the area of the incident optical beam cross-section is significantly larger than the area of the active region of the detector, there are adverse affects. These are as follows. The photons of the incident beam which are absorbed in the undepleted region adjacent to the active region result in lateral diffusion limited currents which are especially deleterious to the detector bandwidth as explained above.
  • the present invention increases the bandwidth of the detector by reducing the capacitance through reducing the detector area as well as by minimizing the area of the bonding pads, but also curbs the ill-effects on bandwidth of the diffusion current in the undepleted region by matching very closely the beam geometry and area to the detector geometry and area.
  • the area of the detector is reduced to reduce capacitance, but is not reduced so much that there is a significant amount of light impingent on the undepleted region outside the active region.
  • the intrinsic capacitance of the detector is greatly reduced by reducing the area of the detector active region.
  • bonding pad geometry and area matches the wedge bond geometry and area. It is a further feature that a new p-contact geometry which protects the active region from wire bonding draws and provides good adhesion is described. It is a feature of the present invention that the bonding pad shape and area substantially matches the pad shape and area of the wedge wirebond which is used to attach the external circuit to the device.
  • a new p-contact structure that substantially protects the active region of from wirebonding damage and provides goods adhesion of the p-contact metallization.
  • Figure 1 is a cross-sectional view of the present invention where light is received at the rear surface of the detector.
  • Figure 2 is a top view of the present invention showing the elliptical annular contact.
  • Figure 3 is a top view of a conventional detector showing the bonding pad arrangement.
  • Figure 4 is a top view of the detector of the present invention showing the bonding pad structure with wire attached.
  • Figure 5 is the superposition of an ellipse on a circle where the major axis of the ellipse equals the diameter of the circle.
  • the shaded region represents the "unused" detector area of a detector having a conventional circular detector area with the typical elliptical incident beam cross-section superposed thereon.
  • Figure 6 is the superposition of an ellipse on a circle where the circle represents the active area of a conventional detector and the ellipse represents the elliptical optical beam.
  • the shaded areas are where the lateral diffusion current is produced.
  • Figure 7 is the superposition of an ellipse on a square where the major axis of the ellipse equals the length of the side of the square.
  • the shaded region represents the "unused" detector area of a detector having a conventional square detector area with the typical elliptical incident beam cross-section superposed thereon.
  • Figure 8 is the superposition of an ellipse on a square where the square represents the active area of a conventional detector and the ellipse represents the elliptical optical beam. The shaded areas are where the lateral diffusion current is produced.
  • Figure 9 shows a typical system in which a substantially circular wave front impinges on a detector resulting in an elliptical wavefront due to the angle of incidence of the wavefront.
  • Figure 10 shows a typical system in which a wavefront is impingent on the detector having elliptical cross-section due to refractive affects of a cylindrical optical surface.
  • Figure 11 shows the refraction of the light from a fiber due to the cylindrical surface of the fiber.
  • Figure 4 shows a detector that receives light at its back surface.
  • the fabrication is the same for each, unless described otherwise.
  • the doping types and levels of dopants described herein are exemplary and are in no way intended to be limiting, but rather merely descriptive. Accordingly, variations of the dopant types and doping levels that are within the purview of the artisan of ordinary skill are considered within the purview of the present invention.
  • the base substrate of n InP 101 is grown by standard LEC techniques having been doped to a
  • n-doped InP 102 having a doping level in the range 2 x IO 15 cm “3 to 1 x IO 16 cm “3 is grown epitaxially.
  • the epitaxial growth of this layer and subsequent layers is performed preferably by standard liquid-phase-epitaxy (LPE) techniques, but also by metal-organic-vapor-phase- epitaxy (MOVPE) .
  • This n-type layer has grown thereon a layer of intrinsic (undoped) InGaAs 103, and functions as the photosensitive layer of the detector.
  • the p + region 105 is formed by selective diffusion preferably of zinc through a patterned mask 106 of material such as SiN x or Si0 2 or a combination thereof as described before. Thereafter an anti ⁇ reflective layer 107 of suitable material preferably of Si 3 N 4 is deposited, and has a portion 109 in the window of the diffusion mask, the advantages of which are described herein.
  • the elliptical p contact 108 is fabricated using standard photolithographic lift-off techniques and metal evaporation techniques, as are well known, and an n contact 110 is formed similarly.
  • the p- side contact is substantially elliptical as shown in Figure 5.
  • the p-side contact 108 is formed first by standard Ti-Pt-Au electron beam deposition techniques.
  • the n-side contact 110 is formed by GeNiAu followed by Au plating for suitable solder bonding.
  • a unique feature of the structure of the embodiment of Figures 1 and 2 is that the p-side metallization is deposited over an elliptical Si 3 N 4 pad region 109 which forms the inner part of the ring contact structure.
  • the adherence of the gold contact pad is greatly improved since gold adheres better to the Si 3 N 4 than it does to semiconductor. More importantly, this elliptical pad 109 protects the underlying active region from damage induced by the wire bonding process used to make the electrical connection to the anode of the device.
  • the elliptical shape of the contact metallization matches well the elongated shape of the wire bond attachment created by the wedge bonding process. All of these factors allow the elimination of an additional wire bond pad, used in conventional devices and which adds parasitic capacitance as discussed previously.
  • the main feature of the structure of the present invention is that the elliptically shaped active region allows a minimization of the capacitance of the device.
  • Junction capacitance reduces the effective bandwidth of the detector since transient signals reduce the effective switching capabilities of the device and the frequency bandwidth of the signal. This minimization of capacitance increases the operation speed and switching speed of the device.
  • the means by which the capacitance reduction is accomplished is as follows.
  • a P-I-N diode is intrinsically a capacitor, having a layer of one type of charge (p-doped layer, for example) , a layer of intrinsic semiconductor, which is in essence a functional insulator, and a layer of material of opposite type charge to that of the first layer (the n- doped layer, for example) .
  • the area of the layers of the charge are directly proportional to the capacitance, the greater the area of the p-doped and n- doped layers, the greater the capacitance.
  • one way to reduce the intrinsic capacitance of the diode would be to reduce the area of the "charged" layers. To this end, the present invention reduces the capacitance by reducing the area of the capacitor made up of the P-I-N detector.
  • Figures 5 and 7 are representative of conventional detectors in which not all of the active region is utilized in the detection of the optical signal.
  • Figure 5 shows an overlap of a geometric ellipse 501 with a major axis 502 overlapping and equal to the diameter of the geometric circle 503.
  • the area in which there is no overlap of the circle 503 and the ellipse 501 is shown as the shaded section 504.
  • the shape of the l/e intensity level of the optical signal is that of an ellipse.
  • the elliptical cross-section is a result of refraction of light of nearly circular cross-section through an asymmetric refractive element.
  • the elliptical cross-section can result from off-axis coupling of a nearly circular beam and a photodetector in which the beam impinges on the photodetector at an angle which is not orthonormal to the surface of the photodetector.
  • the characteristic cross-section of output of a laser or other asymmetric optical beams is elliptical.
  • many conventional optical systems had beam front cross-sections that were more circular.
  • the P-I-N detector has a photosensitive area which is circular or square. When such a detector is used in a system having an elliptical shaped beam, a disadvantage results.
  • the area of the detector is like that of the circle 503 and the beam front has a cross- section like the ellipse 501.
  • the shaded region of the circle 504 represents that portion of the detector which is "unused” in the sense that very little, if any optical signal is impingent there, and yet this portion adds to the junction capacitance of the device.
  • the intrinsic capacitance of the detector can be reduced. Again, this is because the capacitance is directly proportional to the area of the charge, in this case the photosensitive area of the detector. This is the essence of the invention.
  • Figure 7 shows the overlap of a geometric ellipse 701 having a major axis of a length equal to the length of a side of a square 702.
  • the shaded area 703 represents the "unused" detector area and like the circular detector described above, this area results in an increased detector intrinsic capacitance relative to an elliptical detector area of the present invention.
  • Figures 6 and 8 are representative of conventional detectors in which the detector area is not sufficient to capture the expanse.
  • the detector active region is shown as the circle 601 and square 801, respectively.
  • the incident light beam is shown as the ellipses 602 and 802.
  • one approach to reducing the detector capacitance is to reduce the area of the detector, since the capacitance, and thus the deleterious effects of the RC time constant, is proportional to the detector area and will be accordingly reduced.
  • this approach is limited by the finite intensity distribution of the optical beam impinging on the photodetector.
  • the area of the incident optical beam cross-section is significantly larger than the area of the active region of the detector, there are adverse effects. These are as follows.
  • the photons of the incident beam which are absorbed in the undepleted region adjacent to the active region result in lateral diffusion currents which are especially deleterious to the detector bandwidth.
  • the shaded regions 603 and 803 represent the light impingent on the undepleted regions of the photodetector.
  • the present invention is drawn to curbing the ill- effects of both a detector having "unused" detector area as well as the ill-effects of having light impingent outside the active area of the detector.
  • the present invention increases the bandwidth of the detector by reducing the capacitance through reducing the detector area as well as by minimizing the area of the bonding pads, but also curbs the ill-effects on bandwidth of the diffusion current in the undepleted region by matching very closely the beam geometry and area to the detector geometry and area.
  • the area of the detector is reduced to reduce capacitance, but is not reduced so much that there is a significant amount of light impingent on the undepleted region outside the active region.
  • Figure 9 shows an optical fiber 901 in which light is reflected from a reflective surface 902.
  • a symmetrical beam of circular cross-section emanates from single mode fiber and is deflected from the reflective surface. Because the reflective surface deflection is greater than 90°, the intensity distribution at the active region of the detector deviates from the circular cross-section and is approximately elliptically shaped, allowing application of the present invention.
  • Figure 13 shows a typical application in which the reflective surface is at the endface of the fiber, and refraction at the cylindrical surface of the fiber transforms a circular cross-section beam to an elliptical one.
  • the refraction is shown in Figure 11, where the line A-A' is along cylindrical surface of the fiber, which thereby acts as a cylindrical lens.
  • the line A-A' is along cylindrical surface of the fiber, which thereby acts as a cylindrical lens.
  • four uses of the present invention are envisioned.
  • first case light is incident to the detector at other than parallel to the normal to the detector surface. If the light is substantially circular, angular incidence will result in a beam with an approximately elliptical cross-section at the detector surface.
  • the light will be impingent on an asymmetrical optical element, such as a diffractive or refractive element to transform a circular cross-section light beam to an elliptical one.
  • the detector of the present invention is intended for use in a bidirectional module using an asymmetrical holographic optical element.
  • a bidirectional module using an asymmetrical holographic optical element.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne une photodiode PIN dont le plan de zone active présente une forme sensiblement elliptique. Dans le cas des transmissions de données à cadences élevées l'émission et la réception des signaux nécessitent des vitesses de commutation élevées. Plus la vitesse de commutation de l'impulsion numérique doit être élevée, moins on peut tolérer d'effets indésirables imputables aux phénomènes transitoires de type résistance-capacité qui sont souvent des propriétés intrinsèques des détecteurs semi-conducteur. L'une des prncipales composantes de la persistance du phénomène transitoire est l'effet capacitif intrinsèque du semi-conducteur. A cadence de transmission élevée (temps de montée et temps de descente brefs), comme il est important de réduire autant que possible l'effet capacitif intrinsèque du semi-conducteur, il faut une zone active de semi-conducteur optimale, ce qui signifie que la géométrie de la zone active doit correspondre à celle du faisceau optique dans son plan d'incidence sur le détecteur. Dans de nombreuses applications de communications par fibres optiques, la lumière est réfléchie selon un angle spécifique par une surface, ce qui fait qu'un faisceau à coupe circulaire ressort après réflexion avec une coupe elliptique. Jusqu'à présent, on a veillé à ce que la zone active du détecteur, habituellement circulaire, soit assez grande pour accueillir en incidence sur la zone circulaire du détecteur l'ellipse de la coupe du faisceau réfléchi par le réflecteur, ce qui laissait inutilisée une partie de la zone active du détecteur. Un semi-conducteur PIN étant intrinsèquement une capacité, la superficie inutilisée accroît l'effet capacitif intrinsèque du détecteur, ce qui est inacceptable pour les transmissions de données à haute fréquence.
PCT/US1996/014366 1995-09-07 1996-09-09 Photodiode pin a zone detecteur elliptique WO1997009743A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US335595P 1995-09-07 1995-09-07
US60/003,355 1995-09-07

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WO1997009743A1 true WO1997009743A1 (fr) 1997-03-13

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0892287A2 (fr) * 1997-07-15 1999-01-20 Hewlett-Packard Company Capteur d'image à efficacité de collection élevée avec arrangement de microlentilles
EP1198015A2 (fr) * 2000-09-13 2002-04-17 Agere Systems Optoelectronics Guardian Corporation Dispositif optoélectronique dopé pour augmenter le seuil de puissance optique pour l'effondrement de largeur de bande et méthode de fabrication
EP1385033A1 (fr) * 2002-07-25 2004-01-28 Opto Speed Holding SA Dispositif pour le couplage d'au moins une fibre optique à un émetteur ou détecteur optique, et procédé de fabrication correspondante, dispositif pour l'assemblage de plusieurs fibres optiques et procédé de fabrication correspondante
EP1220325A3 (fr) * 2000-12-19 2006-12-13 Eudyna Devices Inc. Dispositif de photodetection à semi-conducteurs
US9592578B2 (en) 2012-09-28 2017-03-14 Ccs Technology, Inc. Method of manufacturing an assembly to couple an optical fiber to an opto-electronic component

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196709A (ja) * 1984-03-19 1985-10-05 Nec Corp 受光装置
JPS63151232A (ja) * 1986-12-16 1988-06-23 Canon Inc 光受信装置
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
DE4402288C1 (de) * 1994-01-27 1995-02-16 Ant Nachrichtentech Optoelektrischer Wandler

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196709A (ja) * 1984-03-19 1985-10-05 Nec Corp 受光装置
JPS63151232A (ja) * 1986-12-16 1988-06-23 Canon Inc 光受信装置
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
DE4402288C1 (de) * 1994-01-27 1995-02-16 Ant Nachrichtentech Optoelektrischer Wandler

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* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 052 (P - 432) 28 February 1986 (1986-02-28) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 414 (E - 677) 2 November 1988 (1988-11-02) *
SZE S. M.: "Physics of Semiconductor Devices", 1981, JOHN WILEY & SONS, SINGAPORE, XP002021816 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0892287A2 (fr) * 1997-07-15 1999-01-20 Hewlett-Packard Company Capteur d'image à efficacité de collection élevée avec arrangement de microlentilles
EP0892287A3 (fr) * 1997-07-15 2000-03-08 Hewlett-Packard Company Capteur d'image à efficacité de collection élevée avec arrangement de microlentilles
EP1198015A2 (fr) * 2000-09-13 2002-04-17 Agere Systems Optoelectronics Guardian Corporation Dispositif optoélectronique dopé pour augmenter le seuil de puissance optique pour l'effondrement de largeur de bande et méthode de fabrication
EP1198015A3 (fr) * 2000-09-13 2004-04-14 TriQuint Technology Holding Co Dispositif optoélectronique dopé pour augmenter le seuil de puissance optique pour l'effondrement de largeur de bande et méthode de fabrication
EP1220325A3 (fr) * 2000-12-19 2006-12-13 Eudyna Devices Inc. Dispositif de photodetection à semi-conducteurs
EP1385033A1 (fr) * 2002-07-25 2004-01-28 Opto Speed Holding SA Dispositif pour le couplage d'au moins une fibre optique à un émetteur ou détecteur optique, et procédé de fabrication correspondante, dispositif pour l'assemblage de plusieurs fibres optiques et procédé de fabrication correspondante
US9592578B2 (en) 2012-09-28 2017-03-14 Ccs Technology, Inc. Method of manufacturing an assembly to couple an optical fiber to an opto-electronic component

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