WO1997007540A1 - Housing for microelectronics components and modules and process for producing it - Google Patents

Housing for microelectronics components and modules and process for producing it Download PDF

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Publication number
WO1997007540A1
WO1997007540A1 PCT/EP1996/003434 EP9603434W WO9707540A1 WO 1997007540 A1 WO1997007540 A1 WO 1997007540A1 EP 9603434 W EP9603434 W EP 9603434W WO 9707540 A1 WO9707540 A1 WO 9707540A1
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WO
WIPO (PCT)
Prior art keywords
housing
connections
components
insulation layer
housing according
Prior art date
Application number
PCT/EP1996/003434
Other languages
German (de)
French (fr)
Inventor
Arno Rentsch
Jürgen Wilde
Karl-Heinz Merkel
Bernhard Schuch
Hermann Kilian
Original Assignee
Daimler-Benz Aktiengesellschaft
Temic Telefunken Microelectronic Gmbh
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Filing date
Publication date
Application filed by Daimler-Benz Aktiengesellschaft, Temic Telefunken Microelectronic Gmbh filed Critical Daimler-Benz Aktiengesellschaft
Publication of WO1997007540A1 publication Critical patent/WO1997007540A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal
    • H01L2924/16315—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the invention relates to a housing for components and modules of microelectronics, such as monolithically integrated circuits, multichip modules and hybrids according to the preamble of claim 1 and a method for its production
  • the leads to the components and the contact pins are attached to a carrier film, which provides the insulation and fixation of the supply lines applied as conductor tracks.
  • the contact pins are soldered to the conductor tracks at the intended locations.
  • a lower housing is first produced. In this lower housing there is a heat sink and a cavity , in which the semiconductor component is positioned. The cavity is closed by a cover after the connections have been made from the component to the conductor tracks
  • Suitable materials for the encapsulation are polyphthalamide (PPA), polyether sulfone (PES), polyether imide (PEI), polyphenylene sulfide (PPS), LC polymer (polyestei, LCP), polyether ketone (PEEK) and polybenzimidazole (PBI) modules that are housed with these thermoplastics generally allow use at temperatures of above half 125 ° C, in particular from 180 - 260 ° C

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention concerns a high-temperature thermoplastics housing for microelectronics components and modules. The housing has a permanent operating temperature of at least 180 °C with an integral heat sink (3) and a lower housing (4). The component connections predominantly take the form of strips disposed on an insulating layer and are partially extrusion-coated with plastics material. The housing also comprises a cover (9) which can be connected to the lower housing (4) when the components have been introduced and their electrical connections have been established. The strip-shaped connections are part of a conductor frame (6), and an insulating layer (2) in the form of a rectangular frame is disposed between the heat sink (3), which consists of a sheet of material which is a good heat conductor, and the tongue-like connections (1) of the conductor frame (6). It is further provided that only part of the length of the tongue-like connections (1) is in contact with the insulating layer (2), terminates on the inside of the frame (2) and rests in an interlocking manner on this layer and the base (3) of the lower housing (4). The plastics material constituting the lower housing is a high-temperature thermoplastics with a processing temperature T > 300 °C. In order to bond the conductor frame (6) and the insulating layer (2), the former can be centred relative to the insulating layer (2) and connected thereto. The insulating layer (2) is dimensionally stable when the plastics material for the lower housing (4) is being processed.

Description

Gehäuse für Bauelemente und Module der Mikroelektronik und Verfahren zu seiner Herstellung Housing for components and modules of microelectronics and process for its manufacture
Beschreibungdescription
Die Erfindung betrifft ein Gehäuse für Bauelemente und Module der Mikroelektronik, wie monolithisch integrierte Schaltkreise, Multichipmodule und Hybride nach dem Oberbegriff des Anspruchs 1 und ein Verfahren zu seiner HerstellungThe invention relates to a housing for components and modules of microelectronics, such as monolithically integrated circuits, multichip modules and hybrids according to the preamble of claim 1 and a method for its production
Integrierte Schaltkreise beispielsweise werden zur Montage und Kontaktierung der äußeren Anschlüsse auf einen sogenannten Leiterrahmen (lead frame) gebondet und anschließend in ein Gehäuse eingeschlossen Insbesondeie für SM D-Bauelemente oder Module mit vielen (mehr als 200) Anschlüssen bereitet die Kapselung der Bauelemente große Schwierigkeiten, vor allen Dingen im Zusammenhang mit den oft vorhandenen KuhlproblemenIntegrated circuits, for example, are bonded to a so-called lead frame for mounting and contacting the external connections and then enclosed in a housing. In particular for SM D components or modules with many (more than 200) connections, the encapsulation of the components presents great difficulties. especially in connection with the often existing cooling problems
Normalerweise wird ein sogenannter IC, auf dem in integrierter Form eine Vielzahl von Funktionen realisiert ist, auf einem Basiselement (Leadframe) fixiert, welches zum IC hin bzgl Anordnung und Zahl der Anschlüsse entsprechende Kontakte aufweist, welche zur Pe¬ ripherie hin mit entsprechenden Anschlüssen auf dem Substrat verbunden werdenNormally, a so-called IC, on which a multitude of functions is implemented in an integrated form, is fixed on a base element (leadframe) which has corresponding contacts to the IC with regard to the arrangement and number of connections, and which has corresponding connections to the periphery be connected to the substrate
Die Anschlüsse auf den Bauelementen mit den entsprechenden Kontaktzungen des Leiter¬ rahmens werden, wie im Falle eines einzelnen IC, in der Regel durch feine Drähte hergestellt, welche sowohl an den Bauelementen als auch an den Kontaktzungen durch Verschweißen (Bonden) befestigt werden Beim Verschweißen müssen die Kontaktzungen des Leiterrah¬ mens einen gewissen Druck aushalten Die ganze Anordnung wild anschließend verschlossen bzw mit Kunststoff umspritzt oder getaucht, damit Umwelteinflüsse sich auf die Schaltung nicht negativ bemerkbar machen können Zum Schluß werden die Kontaktstifte auf ihre end- gültige Form gebracht, d h die zungenförmigen Kontakte werden auf eine bestimmte Länge gebracht und für ein bestimmtes Sockelmaß zurechtgebogenAs in the case of a single IC, the connections on the components with the corresponding contact tongues of the lead frame are generally made by fine wires, which are fastened to the components as well as to the contact tongues by welding (bonding) the contact tongues of the lead frame withstand a certain pressure. The whole arrangement is then closed or molded or dipped with plastic so that environmental influences cannot have a negative effect on the circuit. Finally, the contact pins are brought into their final shape, ie the tongue-shaped Contacts are brought to a certain length and bent for a certain base dimension
Als gängiges Verfahren zur Umhüllung langei bekannt sind die Vollumkapselung der Bau- elemente mit Duroplast-Moldmassen, die sich durch Hineinpi essen in ein Werkzeug formen und in der Form ausharten lassen, sowie dei Einbau in keramische Gehäuse und der Einbau in Metallgehause Der Einbau in Keramik- oder Metallgehäuse gewährleistet eine beinahe hermetische Kapse¬ lung, verteuert jedoch die Komponenten so. daß die Anwendung für einen Massenmarkt nicht in Frage kommtFull encapsulation of the components with thermoset molding compounds, which can be molded into a mold and hardened in the mold by food, as well as their installation in ceramic housings and their installation in metal housings, have long been known as a common method of encapsulation The installation in a ceramic or metal housing ensures an almost hermetic encapsulation, but makes the components more expensive. that the application for a mass market is out of the question
Bei Metallgehäusen kommt hinzu, daß wohl die Wäi mebelastung der gekapselten Elemente sehr gut, die elektrische Isolierung jedoch sehr problematisch ist. Bei Keramikgehäusen hin¬ gegen ergibt sich speziell bei hochpoligen Elementen die Schwierigkeit, die Durchkontaktie- rung sehr filigraner Anschlußkämme durch das Gehäuse zu realisieren, wobei die Abstände zwischen den Anschlußzungen 300 μm betragen können, bei Metallgehäusen sind die Ab- stände typischerweise ca. 2,5 mm.In the case of metal housings there is also the fact that the thermal load of the encapsulated elements is very good, but the electrical insulation is very problematic. In the case of ceramic housings, however, there is a difficulty, particularly in the case of multi-pole elements, in realizing the through-plating of very filigree connection combs through the housing, the distances between the connecting tongues being 300 μm. In the case of metal housings, the distances are typically approximately 5 mm.
Als preiswerteste Variante für kleinflächige Elemente und daher für große Stückzahlen ge¬ eignet ist zur Zeit lediglich die Vollumkapselung mit duroplastischen Werkstoffen. Die elek¬ trischen Isoliereigenschaften sind hierbei naturgemäß sehr gut, die Wärmeableitung jedoch oft ungenügend.The cheapest variant for small-area elements and therefore suitable for large quantities is currently only the full encapsulation with thermoset materials. The electrical insulating properties are naturally very good here, but the heat dissipation is often insufficient.
Eine weitere Schwierigkeit bei der Verwendung von Duroplasten liegt darin, daß die Heπne- tizität der Kapselung für hochwertige und langlebige Bauelemente nicht ausreichend ist. Zu¬ sätzlich führt auch der hohe Grad an Wasseraufnahme in der Moldmasse zu Korrosionspro- blemen. Darüber hinaus werden den Moldmassen, um die Flammwidrigkeit zu gewährleisten, überlicherweise z.B. bromhaltige Additive oder Monomere beigefügt. Dabei sind die üblichen bei der Herstellung und Entsorgung auftretenden Sicherheits- und Umweltprobleme zu be¬ achten.Another difficulty with the use of thermosets is that the encapsulation is not sufficient for high-quality and durable components. In addition, the high degree of water absorption in the molding compound also leads to corrosion problems. In addition, in order to ensure flame retardancy, the molding compounds are usually e.g. bromine-containing additives or monomers are added. The usual safety and environmental problems that arise during production and disposal must be taken into account.
Es kommt hier noch hinzu, daß die Moldmasse nicht hochtemperaturgeeignet und so auf Anwendungen unterhalb von typischerweise 125 - 150° C beschränkt sind, was einen etwai¬ gen Einsatz in der Hochleistungselektronik beschränkt oder ihn bei hohen Temperaturen so¬ gar ausschließt. Solche Einsatzgebiete sind beispielsweise hochintegrierte motornahe Elek¬ tronik und Sensorik in Kraftfahrzeugen.In addition, the molding compound is not suitable for high temperatures and is therefore restricted to applications below typically 125-150 ° C., which limits any use in high-performance electronics or even precludes it at high temperatures. Such fields of application are, for example, highly integrated electronics and sensors in motor vehicles close to the motor.
Speziell bei großflächigen Strukturen für den Temperaturbereich bis 125° C ist bereits der Einsatz von speziellen Thermoplastgehäusen bekannt, die nicht mit einem reaktiven Transfer- Moldverfahren, sondern mittels Spritzguß gefertigt werden, insbesondere für Hybrid-Module. Diese sind jedoch vorerst nur mit wenigen Anschlußpolen realisiert, wobei ein Konstrukti- onswerkstoff wie z.B. Polybutylenterephtalat (PBT) mit integrierten Steckern verwendet wird. Das Gehäuse wird hierbei überlicherweise mit separat aufgeklebten Deckeln verschlos¬ sen. Die Erfindung geht aus von einem Gehäuse für Bauelemente der Mikroelektronik, wie es in der Patentschrift US 4,965,27 beschrieben ist Dieses Gehäuse wird aus einem gießfähigen Kunststoff bzw Thermoplast hergestellt Die Zuleitungen zu den Bauelementen und die Kontaktstifte sind auf einer Trägerfolie befestigt, die dei Isolation und Fixierung der als Lei- terbahnen aufgebrachten Zuleitungen dient Die Kontaktstifte werden an den vorgesehenen Stellen mit den Leiterbahnen verlötet In einer Gießfoi m, in der die Stifte positioniert werden, wird zunächst ein Untergehäuse hergestellt In diesem Untergehäuse befindet sich eine Wär¬ mesenke und ein Hohlraum, in welchem das Halbleiterbauelement positioniert wird. Der Hohlraum wird durch einen Deckel verschlossen, nachdem die Anschlüsse vom Bauelement zu den Leiterbahnen hergestellt worden sindEspecially in the case of large-area structures for the temperature range up to 125 ° C., the use of special thermoplastic housings is already known, which are not manufactured using a reactive transfer molding process, but rather by means of injection molding, in particular for hybrid modules. For the time being, however, these are only realized with a few connection poles, a construction material such as polybutylene terephthalate (PBT) with integrated plugs being used. The housing is usually closed with separately glued-on lids. The invention is based on a housing for components in microelectronics, as described in US Pat. No. 4,965,27. This housing is made of a castable plastic or thermoplastic. The leads to the components and the contact pins are attached to a carrier film, which provides the insulation and fixation of the supply lines applied as conductor tracks. The contact pins are soldered to the conductor tracks at the intended locations. In a casting mold in which the pins are positioned, a lower housing is first produced. In this lower housing there is a heat sink and a cavity , in which the semiconductor component is positioned. The cavity is closed by a cover after the connections have been made from the component to the conductor tracks
Wegen der Lötung der Kontaktstifte ist allerdings eine Vergußmasse mit niedriger Verarbei¬ tungstemperatur vorzuziehen Bei Veraibeitungstemperaturen oberhalb von 300° C wurde sich nämlich die Lόtverbindung möglicherweise losen Aus diesem Grunde ist eine Kombina- tion mit Hochtemperaturthermoplasten als Gehäusematei ial problematisch.Because of the soldering of the contact pins, however, a potting compound with a low processing temperature is preferable. At processing temperatures above 300 ° C., the soldered connection may become loose. For this reason, a combination with high-temperature thermoplastics as a housing file is ia problematic.
Der Erfindung liegt daher die Aufgabe zugrunde, ein Gehäuse und ein Verfahren anzugeben, das die Kapselung für großflächige und hochpolige Strukturen verbessert und insbesondere für hohe Arbeitstemperaturen geeignet istThe invention is therefore based on the object of specifying a housing and a method which improves the encapsulation for large-area and multi-pole structures and is particularly suitable for high working temperatures
Der Erfindung liegt weiter die Aufgabe zugrunde, ein hochintegriertes Bauelement mit einer Vielzahl von Anschlüssen mit einer Warmesenke in gut wärmeleitenden Kontakt zu bringen und die Anschlüsse sicher zu kontaktieren, so daß ein hohes Maß von Zuverlässigkeit garan¬ tiert ist.The invention is further based on the object of bringing a highly integrated component having a large number of connections with a heat sink into good heat-conducting contact and of making reliable contact with the connections, so that a high degree of reliability is guaranteed.
Diese Aufgabe wird durch die im Kennzeichen des Anspruchs I aufgeführten Merkmale ge¬ löstThis object is achieved by the features listed in the characterizing part of claim I.
Die Erfindung eignet sich für Wärmesenken aus Metall oder Keramik, welche mit einem Schaltungsträger, z B einem Silizium-Substrat oder einem Hybrid-Substrat verbunden wer¬ den, und wobei der Schaltungsträger so gekapselt wild, daß Umwelteinflüsse minimiert wer¬ denThe invention is suitable for heat sinks made of metal or ceramic, which are connected to a circuit carrier, for example a silicon substrate or a hybrid substrate, and wherein the circuit carrier is encapsulated wildly so that environmental influences are minimized
Die Erfindung wird nachstehend anhand der Zeichnung naher erläutertThe invention is explained in more detail below with reference to the drawing
Dabei zeigt.It shows.
Fig 1 die Draufsicht auf ein Viertel eines bei eits vorumspritzten Leiterrahmens (lead frame) mit inleyiϊerter Warmesenke und angedeuteter Bestückung, Fig 2 einen Schnitt durch das Gehäuse und die Kontaktstelle des lead frames voi dem et¬ waigen Verschließen und Fig 3 einen Schnitt durch das Gehäuse nach dem Vei schließen1 is a top view of a quarter of a lead frame which has been pre-overmolded in the past with an inleyi Warmerte heat sink and indicated equipment, 2 shows a section through the housing and the contact point of the lead frame before closing, and FIG. 3 shows a section through the housing after the closure
Speziell von ihren etwaigen Einsatztemperaturen hei geeignete Werkstoffe für die Kapselung sind dabei Polyphtalamid (PPA), Polyethersulfon (PES), Polyetherimid (PEI), Polyphenylen- sulfid (PPS), LC-Polymer (Polyestei, LCP), Polyetherketon (PEEK) und Polybenzimidazol (PBI) Module, die mit diesen Thermoplasten gehaust sind, eilauben prinzipiell einen Einsatz bei Temperatuien von obei halb 125° C, insbesondeie von 180 - 260° CSuitable materials for the encapsulation, particularly from their possible operating temperatures, are polyphthalamide (PPA), polyether sulfone (PES), polyether imide (PEI), polyphenylene sulfide (PPS), LC polymer (polyestei, LCP), polyether ketone (PEEK) and polybenzimidazole (PBI) modules that are housed with these thermoplastics generally allow use at temperatures of above half 125 ° C, in particular from 180 - 260 ° C
Das Kapselverfahren mit Thermoplasten, insbesondeie Hochtemperaturthermoplasten, ist im Gegensatz zum Moldverfahren von Duroplasten, ein Sprit zgußvei fahren Dies bedingt eine unterschiedliche Konstruktion des Bauteils und der notwendigen Werkzeuge Vorteilhaft ist hierbei auch, daß nach Ausführen der Kapselung ein innerer Hohlraum gebildet ist, in dem sich die elektronischen Bauteilkomponenten befinden Vorzugsweise werden neben kerami¬ schen Kühlkörpern metallische Kuhlkorpei vei wendetThe encapsulation process with thermoplastics, in particular high-temperature thermoplastics, is, in contrast to the molding process of thermosets, an injection molding process. This requires a different construction of the component and the necessary tools. It is also advantageous here that after the encapsulation, an internal cavity is formed in which the electronic component components are preferably used in addition to ceramic heat sinks, metallic cooling elements
Es wird zuerst ein Rahmen gespritzt, dei anschließend mit einem Deckel verschlossen wirdA frame is first injected, which is then closed with a lid
Wie in Fig 1 und 2 dargestellt, ist der sogenannte lead frame I zunächst mit einer isolieren¬ den Schicht 2 versehen Das Ganze wird in eine Foim eingelegt, in der sich bereits die War¬ mesenke oder das Bodenteil 3 befindet Diese Anoidnung wird mit einem Kunststoffrahmen 4 umspritzt Die Isolatorschicht darf dabei nicht aufschmelzen, sie muß die Warmesenke gegen den Leiterrahmen (lead frame) I sicher isolierenAs shown in FIGS. 1 and 2, the so-called lead frame I is first provided with an insulating layer 2. The whole is placed in a foam in which the heat sink or the base part 3 is already located. This anoidization is carried out with a plastic frame 4 overmolded The insulator layer must not melt, it must insulate the heat sink against the lead frame I safely
Der Vorteil der Erfindung besteht dai in, eine hochpolige Anoidnung mit Anschlußkammen zu kapseln und damit insbesondere als SMD (Sui face Mount Device) auf Leiterplatten mon¬ tierbar zu machenThe advantage of the invention consists in encapsulating a multi-pole anoid device with connection combs and thus making it mountable on printed circuit boards, in particular as an SMD (sui face mount device)
Ein wesentlicher Vorzug der Erfindung besteht dai in, daß dei Leiterrahmen diiekt auf einer harten und hochschmelzenden Unterlage aufliegt, so daß das anschließende Bonden der ein¬ zelnen Kontaktzungen des Anschlußkamms mit dem Bauelement ohne Schwiei igkeit erfolgen kann Das bedeutet, daß an der Stelle 5 ein Gold- odei Alυminiumdrahtchen auf die Kontakt¬ zunge 6 aufgesetzt und mit Druck mit diesei vei schweißt weiden kann, ohne daß diese nachgibt oder wegschmilzt (s Fig 3) Das Bonddiahtchen wird auf der anderen Seite mit elektrischen Anschlüssen auf dem Bauelement 7 verbunden Anschließend wird der Deckel 9 aufgesetzt und mit dem Rahmen 4 verschweißt Es gelingt so eine dichte Kapselung, obwohl nur ein relativ schmaler gespritzt ei Rahmen den Leiten ahmen und die Warmesenke verbin- det Das liegt daran, daß die Warmesenke 3 einen ei lieblichen Anteil an der Kapselung über¬ nimmtAn essential advantage of the invention is that the lead frame lies directly on a hard and high-melting base, so that the subsequent bonding of the individual contact tongues of the connecting comb to the component can take place without difficulty. That means that a 5 at the point Gold or aluminum wire can be placed on the contact tongue 6 and welded with pressure with it, without this yielding or melting away (see Fig. 3). The bonding wire is connected on the other side to electrical connections on the component 7 Cover 9 placed and welded to frame 4 A tight encapsulation is achieved, although only a relatively narrow injection molded frame frames the conductors and connects the heat sink The reason for this is that the heat sink 3 takes over a lovely part of the encapsulation
Das Kunststoff-Spritzgußgehause besteht eifindungsgemaß aus einem Hochtemperatui- thermoplast, vorzugsweise PPS (Polyphenylensulfid) Dieses Material soll hochrein verarbei¬ tet werden und hat dann eine Dauergebrauchstempel atur von ca 220° C Der Leiterrahmen hat eine große Anzahl von Anschlüssen, welche hier als Kontaktzungen bezeichnet werden Diese Kontaktzungen 6 haben eine Starke von ca 0, 15 mmThe plastic injection molded housing consists of a high-temperature thermoplastic, preferably PPS (polyphenylene sulfide). This material is to be processed in a high-purity manner and then has a permanent use stamp of approx. 220 ° C. The lead frame has a large number of connections, which are referred to here as contact tongues These contact tongues 6 have a thickness of approximately 0.15 mm
Es können Leiterrahmen mit einer großen Anzahl (> 200) von Anschlüssen verarbeitet wer¬ den Die dafür erforderlichen Kontaktzungen weisen Abstände bis hinunter zu etwa 300 μm Zwischenraum mit einer Zungenbreite von typischerweise 300 μm auf (pitch z B 635 μm)Lead frames with a large number (> 200) of connections can be processed. The contact tongues required for this have distances down to about 300 μm space with a tongue width of typically 300 μm (pitch z B 635 μm).
Beispiel 1 Das Untergehause 4 wild durch gleichzeitiges Umspritzen einer Scheibe als Warmesenke oder Bodenteil 3 hergestellt Die Wai mesenke besteht aus Metall oder Keramik und hat eine Montagemoglichkeit für Kühlkörper Wenn die Warmesenke aus Metall bestellt, muß sie an der Oberfläche dort isoliert werden, wo die Kontaktzungen nach innen aus dem Gehäuse her¬ ausragen Dafür ist eine isolierende Schicht 2 in Form eines rechteckigen Rahmens vorgese- hen, welche durch Auflaminieren, Aufspritzen oder ein anderes Verfahren wie CVD, PVD, Eloxieren etc hergestellt wirdExample 1 The lower housing 4 is made wild by simultaneously overmoulding a pane as a heat sink or base part 3. The thermal sink is made of metal or ceramic and has a mounting option for heat sinks. If the heat sink is ordered from metal, it must be insulated on the surface where the contact tongues are protrude inwards from the housing for this purpose an insulating layer 2 in the form of a rectangular frame is provided, which is produced by lamination, spraying or another method such as CVD, PVD, anodizing etc.
Beispiel 2Example 2
Wenn die isolierende Schicht 2 als Folie voigesehen ist, kann diese in einer bevoizugten Ausführungsform der Erfindung mit einem Kleber an den Kontaktzungen befestigt werden Bei einer weiteren Ausgestaltung dei Ei findung wild eine Folie beispielsweise aus PPS in Form eines quadratischen Rahmens auf die Untei seite des Leiterrahmens gelegt und unter Einwirkung von Warme in einei Art Schmelzklebei piozeß mit diesem verbundenIf the insulating layer 2 is provided as a film, it can be attached to the contact tongues in a preferred embodiment of the invention with an adhesive. In a further embodiment of the invention, a film, for example, made of PPS in the form of a square frame on the underside of the lead frame placed and under the influence of heat in a kind of hot melt adhesive process connected to it
Eine derart auf den Leiterrahmen aufgebrachte Isoliei schicht bzw Folie hat den Vorteil, sich der Kontur des Rahmens anzupassen, so daß beim Spritzguß des Gehäuses 4 ein Materialaus¬ tritt durch die Zwischenräume des Anschlußkamms weitgehend vermieden wird Gleichzeitig wird der Anschlußkamm durch die Folie 2 stabilisier Da die Isolierschicht sehr schmal ist, d h eine Rahmenstaike von 1 bis 2 mm aufweist, muß dieser auf dem Leadframe sehr genau zentriert werden Beispiel 3An insulating layer or film applied to the lead frame in this way has the advantage of adapting to the contour of the frame, so that when the housing 4 is injection molded, material leakage through the spaces between the connecting comb is largely avoided. At the same time, the connecting comb is stabilized by the film 2 the insulation layer is very narrow, ie has a frame staike of 1 to 2 mm, it must be centered very precisely on the lead frame Example 3
Das Verbinden von Leadframe und elektrischer Isolationsschicht geschieht durch oberflächli¬ ches Anschmelzen einer Kunststoffschicht, die danach auf dem Leadframe zentriert und mit diesem gegebenenfalls unter Druck verbunden wird.The connection of the leadframe and the electrical insulation layer takes place by surface melting of a plastic layer, which is then centered on the leadframe and, if necessary, connected to it under pressure.
Der Deckel 9 wird zum Schluß mit dem Rahmen mit Hilfe von geeigneten Fügetechniken verbunden. Als Fügetechniken kommen vor allen Dingen das Reibschweißen, das Laser¬ schweißen, das Ultraschallschweißen oder das Kleben in Frage. The lid 9 is finally connected to the frame with the help of suitable joining techniques. Friction welding, laser welding, ultrasonic welding or gluing are the most suitable joining techniques.

Claims

Patentansprüche Patent claims
1 Gehäuse für Bauelemente und Module dei Mikroelektronik aus Hochtemperatur- Thermoplast, mit einer Dauergebrauchstemperatur von mindestens 180° C, mit integriei- ter Warmesenke (3) und einem Untergehause (4), bei welchem die Anschlüsse für die Bauelemente überwiegend streifenformig ausgebildet auf einer Isolierschicht angeordnet und teilweise mit Kunststoff umspiitzt sind und einem Deckel (9), welcher nach dem Einbringen der Bauelemente und der Herstellung ihrei elektrischen Anschlußverbindun¬ gen mit dem Untergehause (4) verbindbar ist, dadurch gekennzeichnet, daß die streifenförmigen Anschlüsse Teil eines Leiterrahmes (6) sind, daß zwischen dem der Warmesenke (3), welche aus einer Scheibe aus gut wärmeleitendem Material besteht und den zungenförmigen Anschlüssen ( I ) des Leiten ahmens (6) eine Isolationsschicht1 housing for components and modules of microelectronics made of high-temperature thermoplastic, with a continuous use temperature of at least 180 ° C, with an integrated heat sink (3) and a lower housing (4), in which the connections for the components are predominantly strip-shaped on an insulating layer are arranged and partially covered with plastic and a cover (9), which can be connected to the base housing (4) after the components have been inserted and their electrical connection connections have been made, characterized in that the strip-shaped connections are part of a conductor frame (6) are that there is an insulation layer between the heat sink (3), which consists of a disk made of good heat-conducting material, and the tongue-shaped connections (I) of the conductive frame (6).
(2) in der Form eines rechteckigen Rahmens angeordnet ist, derart, daß nur ein Teil der Länge der zungenförmigen Anschlüsse ( 1 ) mit dei Isolationsschicht (2) Kontakt hat und auf der Innenseite des Rahmens (2) endet und auf dieser Schicht und dem Bodenteil (3) des Untergehäuses (4) formschlüssig aufliegt, daß der Kunststoff des Untergehauses ein Hochtemperatur-Thermoplast ist, mit einei Verarbeitungstemperatur T > 300° C, daß zum Haften von Leiterrahmen (6) und Isolationsschicht (2) ersterer bezuglich der Isola¬ tionsschicht (2) zentrierbar und mit dei Isolationsschicht (2) verbindbar ist, und daß die Isolationsschicht (2) bei der Verarbeitung des Kunststoffs für das Untergehäuse (4) be¬ ständig ist(2) is arranged in the form of a rectangular frame, such that only part of the length of the tongue-shaped connections (1) is in contact with the insulation layer (2) and ends on the inside of the frame (2) and on this layer and the The bottom part (3) of the lower housing (4) rests in a form-fitting manner, that the plastic of the lower housing is a high-temperature thermoplastic, with a processing temperature T > 300 ° C, so that the lead frame (6) and insulation layer (2) adhere to the former with respect to the insulation tion layer (2) can be centered and connected to the insulation layer (2), and that the insulation layer (2) is durable when processing the plastic for the lower housing (4).
2 Gehäuse nach Anspruch 1 , dadurch gekennzeichnet, daß der Kunststoff für das Untergehause (4) und/oder den Deckel (9) aus dem gleichen thermoplastischem Material besteht2 Housing according to claim 1, characterized in that the plastic for the lower housing (4) and / or the cover (9) consists of the same thermoplastic material
3 Gehäuse nach Anspruch 1 odei 2, dadurch gekennzeichnet, daß es unter Verwendung von Polyphtalamid (PPA) hergestellt ist3 Housing according to claim 1 or 2, characterized in that it is manufactured using polyphthalamide (PPA).
4 Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es unter Verwendung von Polyelhei sulfon (PES) hergestellt ist 5 Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es unter Verwendung von Polyethei imid (PEI) hergestellt ist4 Housing according to claim 1 or 2, characterized in that it is manufactured using polyethylene sulfone (PES). 5 Housing according to claim 1 or 2, characterized in that it is manufactured using polyethylene imide (PEI).
6 Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es unter Verwendung von Polyphenylensulfid (PPS) hergestellt ist6 Housing according to claim 1 or 2, characterized in that it is manufactured using polyphenylene sulfide (PPS).
7 Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es unter Verwendung von LC-Polymei (Polyester, LCP) beigestellt ist7 Housing according to claim 1 or 2, characterized in that it is provided using LC polymer (polyester, LCP).
8 Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es unter Veiwendung von Polyethei keton (PEEK) beigestellt ist8 Housing according to claim 1 or 2, characterized in that it is provided using polythene ketone (PEEK).
9 Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es unter Verwendung von Polybenzimidazol (PBI) hei gestellt ist9 Housing according to claim 1 or 2, characterized in that it is made hot using polybenzimidazole (PBI).
10 Gehäuse nach einem der Ansprüche I bis 9, dadurch gekennzeichnet, daß die elektrische Isolationsschicht (2) zwischen den Anschlüssen und dem Gehäuse (3) aus einem hochtemperaturbeständigen Klebeband beigestellt ist10 Housing according to one of claims I to 9, characterized in that the electrical insulation layer (2) between the connections and the housing (3) is made of a high-temperature-resistant adhesive tape
1 1 Gehäuse nach einem der Ansprüche I bis 10, dadurch gekennzeichnet, daß die elektrische Isolationsschicht (2) zwischen den Anschlüssen und dem Gehausebo¬ den (3) aus einer Kunststoffolie durch Ausstanzen hergestellt ist1 1 Housing according to one of claims I to 10, characterized in that the electrical insulation layer (2) between the connections and the housing base (3) is made from a plastic film by punching out
12 Gehäuse nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, daß die elektrische Isolationsschicht (2) aus der Gasphase abgeschieden ist12 Housing according to one of claims 1 to 10, characterized in that the electrical insulation layer (2) is deposited from the gas phase
13 Gehäuse nach einem der Ansprüche I bis 10, dadurch gekennzeichnet, daß die elektrische Isolationsschicht (2) aus einei Eloxalschicht besteht Gehäuse nach einem der Ansprüche 1- 10, dadurch gekennzeichnet, daß die elektrische Isolationsschicht (2) in zunächst flussiger Form auf die Unterseite des Leiterrahmens aufgebracht ist13 Housing according to one of claims I to 10, characterized in that the electrical insulation layer (2) consists of an anodized layer Housing according to one of claims 1-10, characterized in that the electrical insulation layer (2) is initially applied to the underside of the leadframe in liquid form
Gehäuse nach einem der Ansprüche 1 bis 13, dadurch gekennzeichnet, daß die elektrische Isolationsschicht an der Oberfläche zumindest zeitweise erweichbar istHousing according to one of claims 1 to 13, characterized in that the electrical insulation layer on the surface can be softened at least temporarily
Verfahren zum Herstellen eines Gehäuses für elektrische Bauelemente der Mikroelek¬ tronik mit einem Untergehäuse (4), bei welchem der Leiterrahmen (6) für die Anschlüsse der Bauelemente mit Kunststoff umspiitzt sind und einem Deckel (9), welcher nach dem Einbringen der Bauelemente (7) und der Herstellung der elektrischen Verbindung ( 10) der Bauelemente mit den Anschlüssen mit dem Untei gehäuse (4) verbunden wird, dadurch gekennzeichnet, daß ein Leiterrahmen, welcher zungenformige Anschlüsse für elektrische Kontakte auf¬ weist, an der Stelle, an der die Anschlüsse ( I ) durch die Wand des Untergehauses hin¬ durchtreten, mit einer rechteckformigen schmalen Bahn (2) aus einem elektrisch isolie- renden Material bedeckt wird, daß diese Anschlüsse, welche noch einen LeiterrahmenMethod for producing a housing for electrical components of microelectronics with a lower housing (4), in which the lead frame (6) for the connections of the components is covered with plastic and a cover (9), which is closed after the components (7 ) and the establishment of the electrical connection (10) of the components with the connections is connected to the base housing (4), characterized in that a lead frame, which has tongue-shaped connections for electrical contacts, at the point where the connections (I) pass through the wall of the lower housing, is covered with a rectangular, narrow strip (2) made of an electrically insulating material, so that these connections, which still have a lead frame
(einen sogenannten lead frame) bilden, mit dei elektrisch isolierenden Unterseite auf ei¬ nen rechteckigen Bodenteil (3) ausgerichtet aufgelegt werden, und daß in einer Spritz¬ form anschließend das Bodenteil (3) und die Anschlüsse (1) von Kunststoff derart um- spritzt werden, daß ein Rahmen für das Untei gehäuse (4) entsteht, aus dem nach außen die Anschlüsse ( 1 ) ragen, daß die Anschlüsse außen durch Stanzen vereinzelt und auf die vorgesehene Länge gebracht werden und daß nach Montage der auf einem Substrat be¬ findlichen Bauelemente und deren Verbindung mit den Anschlüssen ( 1 ) der Gehäusedek- kel (9) aufgelegt und mit dem Untei gehäuse (4) veibunden wird. (a so-called lead frame), with the electrically insulating underside aligned with a rectangular base part (3), and that the base part (3) and the connections (1) are then surrounded by plastic in an injection mold. are sprayed, that a frame for the base housing (4) is created, from which the connections (1) protrude to the outside, that the connections are isolated on the outside by punching and brought to the intended length and that after assembly the be¬ on a substrate Findable components and their connection to the connections (1) of the housing cover (9) are placed and connected to the base housing (4).
PCT/EP1996/003434 1995-08-19 1996-08-03 Housing for microelectronics components and modules and process for producing it WO1997007540A1 (en)

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