WO1996041412A3 - Monolithic class d amplifier - Google Patents

Monolithic class d amplifier Download PDF

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Publication number
WO1996041412A3
WO1996041412A3 PCT/US1996/008826 US9608826W WO9641412A3 WO 1996041412 A3 WO1996041412 A3 WO 1996041412A3 US 9608826 W US9608826 W US 9608826W WO 9641412 A3 WO9641412 A3 WO 9641412A3
Authority
WO
WIPO (PCT)
Prior art keywords
bridge
amplifier
class
disclosed
integrated circuit
Prior art date
Application number
PCT/US1996/008826
Other languages
French (fr)
Other versions
WO1996041412A2 (en
Inventor
Lawrence G Pearce
Donald F Hemmenway
Original Assignee
Harris Corp
Lawrence G Pearce
Donald F Hemmenway
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/474,559 external-priority patent/US5777362A/en
Priority claimed from US08/483,692 external-priority patent/US5684305A/en
Priority claimed from US08/483,691 external-priority patent/US5689129A/en
Application filed by Harris Corp, Lawrence G Pearce, Donald F Hemmenway filed Critical Harris Corp
Priority to EP96919080A priority Critical patent/EP0830728A2/en
Priority to US08/973,769 priority patent/US5973368A/en
Publication of WO1996041412A2 publication Critical patent/WO1996041412A2/en
Publication of WO1996041412A3 publication Critical patent/WO1996041412A3/en
Priority to US10/738,590 priority patent/US7076070B2/en
Priority to US11/428,095 priority patent/US20060238241A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Abstract

A monolithic integrated circuit (1.75) is mounted in a speaker cabinet (1.71) to drive the voice coil (1.74) of the speaker (1.70). The monolithic integrated circuit may be a class D amplifier (1.10), and is at least a half-bridge or full bridge power MOSFET device. Structures and process for forming the mos switching devices (2.20) of the bridge driver circuits are disclosed. Also disclosed is the N+ buried layer (4.14) of the QVDMOS transistors (4.43) of the bridge circuits.
PCT/US1996/008826 1995-06-07 1996-06-05 Monolithic class d amplifier WO1996041412A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP96919080A EP0830728A2 (en) 1995-06-07 1996-06-05 Monolithic class d amplifier
US08/973,769 US5973368A (en) 1996-06-05 1996-06-05 Monolithic class D amplifier
US10/738,590 US7076070B2 (en) 1996-06-05 2003-12-15 Monolithic class D amplifier
US11/428,095 US20060238241A1 (en) 1996-06-05 2006-06-30 Monolithic class d amplifier

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US47285995A 1995-06-07 1995-06-07
US08/472,859 1995-06-07
US08/474,559 US5777362A (en) 1995-06-07 1995-06-07 High efficiency quasi-vertical DMOS in CMOS or BICMOS process
US08/483,691 1995-06-07
US08/483,692 US5684305A (en) 1995-06-07 1995-06-07 Pilot transistor for quasi-vertical DMOS device
US08/474,559 1995-06-07
US08/483,692 1995-06-07
US08/483,691 US5689129A (en) 1995-06-07 1995-06-07 High efficiency power MOS switch

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US08973769 A-371-Of-International 1996-06-05
US39280699A Division 1996-06-05 1999-09-09

Publications (2)

Publication Number Publication Date
WO1996041412A2 WO1996041412A2 (en) 1996-12-19
WO1996041412A3 true WO1996041412A3 (en) 1997-02-27

Family

ID=27504174

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/008826 WO1996041412A2 (en) 1995-06-07 1996-06-05 Monolithic class d amplifier

Country Status (3)

Country Link
EP (1) EP0830728A2 (en)
CN (1) CN1086259C (en)
WO (1) WO1996041412A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6157252A (en) * 1998-09-09 2000-12-05 The Engineering Consortium, Inc. Battery polarity insensitive integrated circuit amplifier
JP3896894B2 (en) * 2002-05-13 2007-03-22 ソニー株式会社 Power amplifier
US7728659B2 (en) * 2005-01-28 2010-06-01 Nxp B.V. Arrangement for amplifying a PWM input signal
US9941813B2 (en) * 2013-03-14 2018-04-10 Solaredge Technologies Ltd. High frequency multi-level inverter
US9318974B2 (en) 2014-03-26 2016-04-19 Solaredge Technologies Ltd. Multi-level inverter with flying capacitor topology
US9543899B2 (en) * 2014-11-10 2017-01-10 Microchip Technology Incorporated Class D power driver peripheral
CN106060742A (en) * 2016-06-08 2016-10-26 钰太芯微电子科技（上海）有限公司 Microphone circuit and MOS tube therein
CN109346466B (en) * 2018-08-17 2020-10-16 矽力杰半导体技术(杭州)有限公司 Semiconductor structure and driving chip
CN109688514B (en) * 2018-12-26 2023-09-15 上海艾为电子技术股份有限公司 High-voltage digital audio power amplifier system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313126A (en) * 1979-05-21 1982-01-26 Raytheon Company Field effect transistor
US4554512A (en) * 1984-08-27 1985-11-19 Aerotech, Inc. Switching amplifier with MOSFET driver circuit
EP0525777A1 (en) * 1991-08-02 1993-02-03 Sharp Kabushiki Kaisha Speaker driving circuit
US5387875A (en) * 1993-01-29 1995-02-07 Rion Kabushiki Kaisha Output circuit capable of driving a vibration device
EP0655830A1 (en) * 1993-11-30 1995-05-31 Kaiser Aerospace And Electronics Corporation Very low power loss amplifier for analog signals utilizing constant-frequency zero-voltage-switchting multi-resonant converter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313126A (en) * 1979-05-21 1982-01-26 Raytheon Company Field effect transistor
US4554512A (en) * 1984-08-27 1985-11-19 Aerotech, Inc. Switching amplifier with MOSFET driver circuit
EP0525777A1 (en) * 1991-08-02 1993-02-03 Sharp Kabushiki Kaisha Speaker driving circuit
US5387875A (en) * 1993-01-29 1995-02-07 Rion Kabushiki Kaisha Output circuit capable of driving a vibration device
EP0655830A1 (en) * 1993-11-30 1995-05-31 Kaiser Aerospace And Electronics Corporation Very low power loss amplifier for analog signals utilizing constant-frequency zero-voltage-switchting multi-resonant converter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A.W. SWAGER: "POWER ICS WEIGHING THE BENEFITS OF INTEGRATION", EDN ELECTRICAL DESIGN NEWS, vol. 39, no. 14, 7 July 1994 (1994-07-07), pages 68 - 72, 74, 76, 78, 80, 82, XP000469313 *

Also Published As

Publication number Publication date
EP0830728A2 (en) 1998-03-25
WO1996041412A2 (en) 1996-12-19
CN1086259C (en) 2002-06-12
CN1191641A (en) 1998-08-26

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