WO1996027032A1 - Chemical vapor deposition utilizing a precursor - Google Patents

Chemical vapor deposition utilizing a precursor Download PDF

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Publication number
WO1996027032A1
WO1996027032A1 PCT/US1996/001773 US9601773W WO9627032A1 WO 1996027032 A1 WO1996027032 A1 WO 1996027032A1 US 9601773 W US9601773 W US 9601773W WO 9627032 A1 WO9627032 A1 WO 9627032A1
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WO
WIPO (PCT)
Prior art keywords
liquid
solution
precursor
chamber
specified
Prior art date
Application number
PCT/US1996/001773
Other languages
French (fr)
Inventor
Donald L. Westmoreland
Gurtej S. Sandhu
Original Assignee
Micron Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology, Inc. filed Critical Micron Technology, Inc.
Priority to KR1019970705999A priority Critical patent/KR100326744B1/en
Priority to JP52626896A priority patent/JP3787574B2/en
Publication of WO1996027032A1 publication Critical patent/WO1996027032A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles

Definitions

  • the invention relates to the manufacture of semiconductor circuits on semiconductor wafers, and more particularly to chemical vapor depositions of materials on the wafer.
  • a large number of nonvolatile metal organic precursors which are suitable in microelectronics applications for chemical vapor deposition (CVD) of thin films are solids at temperatures at or below 1500 Kelvin and at pressures at or above 10 "10 Torr.
  • a majority of metal-organic compounds with attributes desirable for CVD are solids. These compounds have chemical stability, molecular structures, and reactivity which make them ideally suited for CVD application.
  • vapor transport is difficult to perform under temperatures and pressures typically utilized in semiconductor manufacture. Thus, vapor transport of these precursors is a major hinderance to the implementation of the precursors in a production environment.
  • the precursor has a sufficient vapor pressure, then sublimation of the precursor for transportation of its vapor is the only option available, however this is difficult to control in a manufacturing environment. Solid precursors have been dissolved, transported, and delivered in organic solution, but these solutions usually leave a large carbon residue.
  • CVD chemical vapor deposition
  • the invention features dissolving a volitile or nonvolatile precursor, either solid or liquid, in a solution and delivering the precursor in the solution to a CVD chamber.
  • the invention is a very efficient method for transporting a nonvolatile precursor for CVD in the manufacturing environment and incorporates a minimum amount of unwanted by-product in the desired film.
  • the method entails a process which is easily controlled and therefore predictable with repeatable results.
  • the invention is a method directed to the use of a nonvolatile precursor, either solid or liquid, in a chemical vapor deposition (CVD) process.
  • a solid precursor as referenced herein, is a precursor which is in a solid state at a temperature at or below 1500 Kelvin and at a pressure at or above 10 l ⁇ Torr
  • a liquid precursor as referenced herein, is a precursor which is in a liquid state at a temperature at or below 1500 Kelvin and at a pressure at or above 10 "10 Torr.
  • the nonvolatile precursor is dissolved in a solvent to form a solution.
  • the nonvolatile precursor is then transported in the solution at a pressure and a temperature necessary to maintain it as a liquid to the CVD chamber.
  • the solution is transported in a continuous liquid stream to the CVD chamber.
  • a continuous liquid stream is an unbroken non-nebulized stream of liquid which may be passed to the chamber without interruption or may be passed to the chamber in a pulse or batch. The pulse or batch can be thought of as a portion of the solution.
  • the solution becomes a gas during rapid evaporation of the solution at a high temperature and at a low pressure.
  • the gaseous form of the precursor reacts with a reactant at the heated surface of the wafer.
  • the method of the invention can be used in liquid source chemical vapor deposition where the solution is applied to the wafer before being evaporated.
  • Brief Description of the Drawing Figure 1 is a cross section of a simplified representation of the equipment used to perform a chemical vapor deposition on a semiconductor wafer.
  • the invention is a method directed to the use of a nonvolatile precursor suitable for chemical vapor deposition (CVD).
  • the nonvolatile precursor may be a solid or a liquid.
  • the solid precursor as referenced herein, is a precursor which is in a solid state at a temperature at or below 1500 Kelvin and at a pressure at or above 10 " '° Torr.
  • the liquid precursor as referenced herein, is in a liquid state at a temperature at or below 1500 degrees Kelvin and at a pressure at or above 10 "10 Torr.
  • the method can be understood by studying Figure 1 in conjunction with the following description. Using the method of the invention, the nonvolatile precursor is dissolved in a solvent to form a solution 1 of the precursor and the solvent.
  • the solvent can be either a reactive component which makes up a part of the film or it can be simply a nonreactive inert carrier.
  • the solution 1 is formed in a chamber 2.
  • the solution 1 is then transported in liquid form at elevated pressures and/or reduced temperatures to a chamber 3 through a transport device 4.
  • the liquid is transported as a continuous liquid stream to the chamber 3.
  • a continuous liquid stream is an unbroken non-nebulized stream of liquid which may be passed to the chamber without interruption or may be passed to the chamber in a pulse or batch.
  • the pulse or batch can be thought of as a portion of the solution.
  • the solution 1 becomes a gas upon entry to the chamber 3.
  • the chamber 3 is held at a high enough temperature and a low enough pressure to effect rapid evaporation of the solution 1.
  • the precursor remains in the gas phase until it reacts with a reactant at a heated surface of the wafer 5.
  • the reactant may be either the solvent in its gaseous state or may be another gas injected into the chamber 3. In either case a material is produced during the reaction and deposited as a film on the wafer 5. Typically, a gaseous by-product is also produced in the reaction.
  • One example of the first embodiment comprises a solid precursor of bis(cyclopentadienly)titanium diazide (Tiaz) dissolved in liquid ammonia (LNH 3 ) to form a solution 1 of Tiaz in LNH 3 in chamber 2 when the temperature of chamber 2 is 20° C or less and the pressure is 120 psi or greater.
  • the Tiaz in LNH 3 is then transported to the chamber 3 through the transport device 4.
  • the temperature and pressure of the transport device 4 are regulated in order to keep the solution in it liquid form. In this example the temperature is 20° or less and the pressure is 120 psi or greater.
  • the solution 1 immediately vaporizes upon entry into chamber 3.
  • the rapid evaporation occurs because the chamber 3 is held at a temperature of 100° C and a pressure of 500 millitorr and the water surface is held at 550° C. Hydrogen is injected into the chamber and combines with the vaporized Tiaz to form titanium nitride which is deposited on the wafer as a thin film. A by-product cyclopentadiene remains and is pumped from the chamber with the ammonia vapor.
  • the temperatures and pressures may be varied as long as the temperature and pressure of the chamber and transport device allow the precursor to remain dissolved in the solution.
  • the temperature and pressure of the chamber may vary as long as the solution is vaporized.
  • the solution 1 is applied to the wafer 5 before being evaporated.
  • This is typically referred to as liquid source chemical vapor deposition.
  • the solution is delivered through a nebulizer which delivers a very fine mist that settles evenly over the entire wafer.
  • the temperature of the wafer 5 may be either higher, or lower, or the same as the temperature of the solution 1.
  • the wafer temperature and chamber 3 pressure must be maintained so that the solvent evaporates upon contact with the wafer surface and so that the precursor reacts immediately with the reactant gas, which is either injected into the chamber or formed during evaporation of the solution. to deposit a film.
  • the solution remains on the wafer until the wafer temperature is increased to evaporate the solvent.
  • the gaseous state of the precursor reacts with a gas reactant thereby producing a material deposited as a film on the wafer surface.
  • the reaction typically produces a gaseous by-product in addition to the deposited film.
  • the by-product and the solvent vapor in the case where the vapor doesn't react with the precursor to form the film, are then removed from the chamber 3.
  • An example of the process of the second embodiment comprises a precursor, zirconium tetrachloride, dissolved in a solvent, silicon tetrachloride, to form a solution in chamber 2 when the temperature of the chamber 2 is between 60° and 10° C and the pressure is 60 psi or greater.
  • the solution is then transported to the chamber 3 through the transport device 4.
  • the temperature and pressure of the transport device 4 are regulated in order to maintain the solution in its liquid form.
  • the temperature and pressure of the transport device 4 are the same as the temperature and pressure of chamber 2.
  • Chamber 3 is held at a pressure of 10 torr in order to help facilitate the vaporization of the solution on the wafer.
  • the wafer temperature is 600° C.
  • the zirconium tetrachloride in silicon tetrachloride solution is injected into the chamber 3 and reacts at the wafer surface to form a vapor and combines with hydrogen to form zirconium suicide which is deposited on the wafer to form a thin film.
  • a by-product, hydrogen chloride, is formed and is pumped from the chamber with the excess silicon tetrachloride.
  • Ideal solvents for this application are inorganic liquids such as: liquid ammonia (NH 3 ), liquid NO 2 , liquid SO 2 , liquid TiCl 4 , liquid TaCl 5 , liquid WF 6 , liquid SiCl 4 , borazine, dimethyl hydrazine, liquid xenonflourides, liquid phosphine, liquid arsine, diethylzinc, BC1 3 , BF 3 , SF 6 , H 2 S, SiF 4 , CBrF 3 , CC1 2 F 2 , CC1 3 F, CC1F 3 , CC1 4 , SiH 2 Cl 2 .
  • halogens in addition to halogens, interhalogens, and pseudohalogens may be used as the solvent in this application.
  • solvents are gases at room temperature but are easily maintained as liquids with elevated pressure and reduced temperature. For example, ammonia boils at -33° C and is an excellent solvent. It is a further advantage that these gases are easily available at a low cost at the present time.
  • the following gases may be selected as reactant gases for forming the deposited film: hydrogen, ammonia, or silane.
  • nonvolatile liquid precursors suitable for forming films on semiconductor wafers by the method of the invention: bizcylcopentadyenyltitaniumdyazide, indenyltris(dimethylamido)zirconium, cyclopentadienyltris(diethylamido)titanium, and bis(cyclopentadienyl)bis(dimethylamido)titanium.
  • the invention provides an efficient method for transporting nonvolatile precursors for CVD in the manufacturing environment.

Abstract

The invention is a method directed to the use of a precursor, either a solid precursor or a liquid precursor, suitable for chemical vapor deposition (CVD), including liquid source CVD (LSCVD), of a semiconductor film. Using the method of the invention the precursor is dissolved in a solvent. The choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature and that can be liquified by a combination of pressure and cooling. The solution thus formed is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. In CVD the solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited as a thin film on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film on the wafer surface.

Description

CHEMICAL VAPOR DEPOSITION UTILIZING A PRECURSOR
Field of the Invention The invention relates to the manufacture of semiconductor circuits on semiconductor wafers, and more particularly to chemical vapor depositions of materials on the wafer.
Background of the Invention A large number of nonvolatile metal organic precursors which are suitable in microelectronics applications for chemical vapor deposition (CVD) of thin films are solids at temperatures at or below 1500 Kelvin and at pressures at or above 10"10 Torr. In fact, a majority of metal-organic compounds with attributes desirable for CVD are solids. These compounds have chemical stability, molecular structures, and reactivity which make them ideally suited for CVD application. However, vapor transport is difficult to perform under temperatures and pressures typically utilized in semiconductor manufacture. Thus, vapor transport of these precursors is a major hinderance to the implementation of the precursors in a production environment. If the precursor has a sufficient vapor pressure, then sublimation of the precursor for transportation of its vapor is the only option available, however this is difficult to control in a manufacturing environment. Solid precursors have been dissolved, transported, and delivered in organic solution, but these solutions usually leave a large carbon residue.
Objects of the Invention It is an object of the invention to provide reliable production worthy methods for fast delivery of nonvolatile precursors to the chemical vapor deposition (CVD) chamber.
The invention features dissolving a volitile or nonvolatile precursor, either solid or liquid, in a solution and delivering the precursor in the solution to a CVD chamber. The invention is a very efficient method for transporting a nonvolatile precursor for CVD in the manufacturing environment and incorporates a minimum amount of unwanted by-product in the desired film. The method entails a process which is easily controlled and therefore predictable with repeatable results.
Summary of the Invention The invention is a method directed to the use of a nonvolatile precursor, either solid or liquid, in a chemical vapor deposition (CVD) process. A solid precursor, as referenced herein, is a precursor which is in a solid state at a temperature at or below 1500 Kelvin and at a pressure at or above 10 lϋ Torr, and a liquid precursor, as referenced herein, is a precursor which is in a liquid state at a temperature at or below 1500 Kelvin and at a pressure at or above 10"10 Torr. Using the method of the invention the nonvolatile precursor is dissolved in a solvent to form a solution. The nonvolatile precursor is then transported in the solution at a pressure and a temperature necessary to maintain it as a liquid to the CVD chamber. The solution is transported in a continuous liquid stream to the CVD chamber. A continuous liquid stream is an unbroken non-nebulized stream of liquid which may be passed to the chamber without interruption or may be passed to the chamber in a pulse or batch. The pulse or batch can be thought of as a portion of the solution.
In a first embodiment the solution becomes a gas during rapid evaporation of the solution at a high temperature and at a low pressure. The gaseous form of the precursor reacts with a reactant at the heated surface of the wafer.
In a second embodiment the method of the invention can be used in liquid source chemical vapor deposition where the solution is applied to the wafer before being evaporated. Brief Description of the Drawing Figure 1 is a cross section of a simplified representation of the equipment used to perform a chemical vapor deposition on a semiconductor wafer.
Detailed Description of the Invention The invention is a method directed to the use of a nonvolatile precursor suitable for chemical vapor deposition (CVD). The nonvolatile precursor may be a solid or a liquid. The solid precursor, as referenced herein, is a precursor which is in a solid state at a temperature at or below 1500 Kelvin and at a pressure at or above 10"'° Torr. and the liquid precursor, as referenced herein, is in a liquid state at a temperature at or below 1500 degrees Kelvin and at a pressure at or above 10"10 Torr. The method can be understood by studying Figure 1 in conjunction with the following description. Using the method of the invention, the nonvolatile precursor is dissolved in a solvent to form a solution 1 of the precursor and the solvent. It is important that the precursor and the solvent do not react with each other in liquid form. The solvent can be either a reactive component which makes up a part of the film or it can be simply a nonreactive inert carrier. The solution 1 is formed in a chamber 2. The solution 1 is then transported in liquid form at elevated pressures and/or reduced temperatures to a chamber 3 through a transport device 4. The liquid is transported as a continuous liquid stream to the chamber 3. A continuous liquid stream is an unbroken non-nebulized stream of liquid which may be passed to the chamber without interruption or may be passed to the chamber in a pulse or batch. The pulse or batch can be thought of as a portion of the solution. When the solution 1 reaches the chamber 3. at least two options are available.
In a first embodiment the solution 1 becomes a gas upon entry to the chamber 3. The chamber 3 is held at a high enough temperature and a low enough pressure to effect rapid evaporation of the solution 1. The precursor remains in the gas phase until it reacts with a reactant at a heated surface of the wafer 5. The reactant may be either the solvent in its gaseous state or may be another gas injected into the chamber 3. In either case a material is produced during the reaction and deposited as a film on the wafer 5. Typically, a gaseous by-product is also produced in the reaction.
One example of the first embodiment comprises a solid precursor of bis(cyclopentadienly)titanium diazide (Tiaz) dissolved in liquid ammonia (LNH3) to form a solution 1 of Tiaz in LNH3 in chamber 2 when the temperature of chamber 2 is 20° C or less and the pressure is 120 psi or greater. The Tiaz in LNH3 is then transported to the chamber 3 through the transport device 4. The temperature and pressure of the transport device 4 are regulated in order to keep the solution in it liquid form. In this example the temperature is 20° or less and the pressure is 120 psi or greater. The solution 1 immediately vaporizes upon entry into chamber 3. The rapid evaporation occurs because the chamber 3 is held at a temperature of 100° C and a pressure of 500 millitorr and the water surface is held at 550° C. Hydrogen is injected into the chamber and combines with the vaporized Tiaz to form titanium nitride which is deposited on the wafer as a thin film. A by-product cyclopentadiene remains and is pumped from the chamber with the ammonia vapor.
The temperatures and pressures may be varied as long as the temperature and pressure of the chamber and transport device allow the precursor to remain dissolved in the solution. In addition the temperature and pressure of the chamber may vary as long as the solution is vaporized.
In a second embodiment, the solution 1 is applied to the wafer 5 before being evaporated. This is typically referred to as liquid source chemical vapor deposition. The solution is delivered through a nebulizer which delivers a very fine mist that settles evenly over the entire wafer. When the solution first contacts the wafer the temperature of the wafer 5 may be either higher, or lower, or the same as the temperature of the solution 1. In the first case the wafer temperature and chamber 3 pressure must be maintained so that the solvent evaporates upon contact with the wafer surface and so that the precursor reacts immediately with the reactant gas, which is either injected into the chamber or formed during evaporation of the solution. to deposit a film. In the latter two cases, the solution remains on the wafer until the wafer temperature is increased to evaporate the solvent. As in the case of the first embodiment the gaseous state of the precursor reacts with a gas reactant thereby producing a material deposited as a film on the wafer surface. The reaction typically produces a gaseous by-product in addition to the deposited film. The by-product and the solvent vapor, in the case where the vapor doesn't react with the precursor to form the film, are then removed from the chamber 3.
An example of the process of the second embodiment comprises a precursor, zirconium tetrachloride, dissolved in a solvent, silicon tetrachloride, to form a solution in chamber 2 when the temperature of the chamber 2 is between 60° and 10° C and the pressure is 60 psi or greater. The solution is then transported to the chamber 3 through the transport device 4. The temperature and pressure of the transport device 4 are regulated in order to maintain the solution in its liquid form. In this example the temperature and pressure of the transport device 4 are the same as the temperature and pressure of chamber 2. Chamber 3 is held at a pressure of 10 torr in order to help facilitate the vaporization of the solution on the wafer. The wafer temperature is 600° C. The zirconium tetrachloride in silicon tetrachloride solution is injected into the chamber 3 and reacts at the wafer surface to form a vapor and combines with hydrogen to form zirconium suicide which is deposited on the wafer to form a thin film. A by-product, hydrogen chloride, is formed and is pumped from the chamber with the excess silicon tetrachloride.
It is important to use the correct solvent when performing the method of the invention. The solvent must be able to evaporate quickly and leave no contaminates in the product film. Therefore common hydrocarbon solvents are unacceptable because they leave carbon residue incorporated in the wafer film, dependent on the wafer. Ideal solvents for this application are inorganic liquids such as: liquid ammonia (NH3), liquid NO2, liquid SO2, liquid TiCl4, liquid TaCl5, liquid WF6, liquid SiCl4, borazine, dimethyl hydrazine, liquid xenonflourides, liquid phosphine, liquid arsine, diethylzinc, BC13, BF3, SF6, H2S, SiF4, CBrF3, CC12F2, CC13F, CC1F3, CC14, SiH2Cl2. In addition halogens, interhalogens, and pseudohalogens may be used as the solvent in this application. Many of these solvents are gases at room temperature but are easily maintained as liquids with elevated pressure and reduced temperature. For example, ammonia boils at -33° C and is an excellent solvent. It is a further advantage that these gases are easily available at a low cost at the present time.
The following gases may be selected as reactant gases for forming the deposited film: hydrogen, ammonia, or silane.
The following are some of the solid precursors suitable for forming films on semiconductor wafers by the method of the invention: bis(cyclopentadienyl) titanium dichloride, ZrC14, and tungsten carbonyl.
The following are some of the nonvolatile liquid precursors suitable for forming films on semiconductor wafers by the method of the invention: bizcylcopentadyenyltitaniumdyazide, indenyltris(dimethylamido)zirconium, cyclopentadienyltris(diethylamido)titanium, and bis(cyclopentadienyl)bis(dimethylamido)titanium.
There are various combinations of nonvolatile precursors, solvents and reactants that may be used in the process of the invention.
It has been shown that the invention provides an efficient method for transporting nonvolatile precursors for CVD in the manufacturing environment.
Although the invention has been described in terms of a depositing materials on semiconductor wafers during chemical vapor depositions, the circuit and method have utility in other processes where a chemical vapor deposition is desired. Accordingly the invention should be read as limited only by the claims.

Claims

WHAT IS CLAIMED IS:
1. A method for performing a chemical vapor deposition of a film on a surface of a workpiece, comprising the following steps: a) solubilizing a precursor in an inorganic solvent to form a liquid solution; b) transporting said liquid solution to a chamber; c) evaporating said liquid solution in said chamber to change a state of said precursor to a vapor; and d) depositing the film on the surface of the workpiece from the vapor of said precursor.
2. The method as specified in Claim 1 , further comprising the step of eliminating contaminates during the depositing of the film by selecting said inorganic solvent and said precursor to ensure non-reaction of said inorganic solvent and said precursor in said solution.
3. The method as specified in Claim 1, further comprising the following steps: a) creating a by-product during said step of depositing; and b) removing said by-product from said chamber.
4. The method as specified in Claim 1, further comprising the following steps: a) injecting said liquid solution into said chamber; and b) controlling the temperature and pressure of said chamber such that the temperature is high enough and the pressure is low enough to rapidly effect said step of evaporating said liquid solution when said liquid solution enters said chamber.
5. The method as specified in Claim 4, further comprising the step of heating said workpiece to a temperature greater than said vapor of said precursor thereby precipitating said step of depositing.
6. The method as specified in Claim 1, wherein said step of evaporating comprises the steps of: a) heating said workpiece to a temperature capable of evaporating said liquid solution; b) applying said liquid solution to the surface of the workpiece; and c) increasing a temperature of said liquid solution to said temperature capable of evaporating said liquid solution in response to said step of applying and said step of heating thereby effecting said step of evaporating.
7. The method as specified in Claim 6. further comprising the following steps: a) nebulizing said liquid solution at said chamber in order to create a mist of said liquid solution prior to said step of applying; and b) uniformly covering the surface of the workpiece with said mist during said step of applying.
8. The method as specified in Claim 6, further comprising the following steps: a) heating the workpiece to a temperature greater than a temperature of said liquid solution prior to said step of applying; and b) controlling a temperature and a pressure of said chamber in order to effect said step of evaporating.
9. A method for depositing a film on a surface, comprising the following steps: a) combining a precursor and an inorganic solvent to form a solution; b) adjusting a temperature and a pressure in order to maintain said solution in a liquid state; c) transporting said solution to a chamber; d) vaporizing the solution at said chamber to form a precursor vapor; and e) depositing the film on the surface from the precursor vapor.
10. The method as specified in Claim 1 or 9, further comprising the step of creating a reaction between said vapor of said precursor and a reactant vapor in order to perform said step of depositing.
1 1. The method as specified in Claim 1 or 9, wherein the precursor is volatile.
12. The method as specified in Claim 1 or 9, wherein the precursor is nonvolatile.
13. The method as specified in Claim 1 , wherein said precursor is a solid at a normal temperature and pressure.
14. The method as specified in Claim 13, wherein said soli is selected from the group consisting of Bizcyclopentadyenyltitaniumdyazide, ZrC14, and biscyclopentadienyltitaniumdichloride.
15. The method as specified in Claim 1 , wherein said precursor is a liquid at a normal temperature and pressure.
16. The method as specified in Claim 15, wherein said liquid is selected from the group consisting of indenyltris(dimethylamido)zirconium, cyclopentadienyltris(diethylamido)-titanium, and bis(cyclopentadienyl)bis(dimethylamido)titanium.
17. The method as specified in Claim 1. wherein said inorganic solvent is selected from the group consisting of liquid ammonia (NH3), liquid NO2, liquid SO2. liquid TiCl4, liquid TaCl5, liquid WF6, liquid SiCl4, borazine, hydrazine, liquid xenonfluorides, liquid phosphine, liquid arsine, diethylzinc, BC13, BF3, SF6, H2S, SiF4, CBrF3, CC12F2, CC13F, CC1F3, CC14, SiH2Cl2, halogens, interhalogens, and pseudohalogens.
18. The method as specified in Claim 1, wherein said step of transporting further comprises transporting said liquid solution in pulses.
19. An apparatus for depositing a film on a surface of a workpiece from a precursor vapor, comprising: a) a chamber in which to evaporate a solution comprised of an inorganic solvent in order to change a state of a precursor solubilized in the solution to the precursor vapor; and b) a transporting means for transporting the solution containing the precursor to the chamber as a liquid.
20. The apparatus as specified in Claim 19, further comprising a container for containing the solution and connectable to the transporting means.
21. The apparatus as specified in Claim 19, further comprising: a) a means for controlling a temperature of the solution in the transporting means; and b) a means for controlling a pressure applied to the solution in the transporting means, said means for controlling a temperature and said means for controlling a pressure applying a temperature and a pressure to the solution to maintain the solution in liquid form during a transport of the solution to the chamber.
PCT/US1996/001773 1995-02-28 1996-02-09 Chemical vapor deposition utilizing a precursor WO1996027032A1 (en)

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KR1019970705999A KR100326744B1 (en) 1995-02-28 1996-02-09 Chemical Vapor Deposition Utilizing a Precursor
JP52626896A JP3787574B2 (en) 1995-02-28 1996-02-09 Chemical vapor deposition using a precursor

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US08/395,942 1995-02-28

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US8399056B2 (en) 2006-06-02 2013-03-19 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US9045509B2 (en) 2009-08-14 2015-06-02 American Air Liquide, Inc. Hafnium- and zirconium-containing precursors and methods of using the same
US9499571B2 (en) 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US9663547B2 (en) 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
US10106568B2 (en) 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films

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US8399056B2 (en) 2006-06-02 2013-03-19 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US8470402B2 (en) 2006-06-02 2013-06-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of depositing a metal-containing dielectric film
US8668957B2 (en) 2006-06-02 2014-03-11 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
US9583335B2 (en) 2006-06-02 2017-02-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
US9911590B2 (en) 2006-06-02 2018-03-06 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing
US10217629B2 (en) 2006-06-02 2019-02-26 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
US9045509B2 (en) 2009-08-14 2015-06-02 American Air Liquide, Inc. Hafnium- and zirconium-containing precursors and methods of using the same
US9499571B2 (en) 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US9663547B2 (en) 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
US9868753B2 (en) 2014-12-23 2018-01-16 L'Air Liquide, Société Anonyme our l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing composition for vapor deposition of zirconium-containing films
US10106568B2 (en) 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films

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