WO1996021952A1 - Dispositifs comportant des films minces - Google Patents

Dispositifs comportant des films minces Download PDF

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Publication number
WO1996021952A1
WO1996021952A1 PCT/IB1996/000106 IB9600106W WO9621952A1 WO 1996021952 A1 WO1996021952 A1 WO 1996021952A1 IB 9600106 W IB9600106 W IB 9600106W WO 9621952 A1 WO9621952 A1 WO 9621952A1
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WO
WIPO (PCT)
Prior art keywords
film according
thin film
particles
tip
cds
Prior art date
Application number
PCT/IB1996/000106
Other languages
English (en)
Inventor
Victor Erokhin
Paulo Facci
Claudio Nicolini
Original Assignee
Technobiochip
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9500669.8A external-priority patent/GB9500669D0/en
Application filed by Technobiochip filed Critical Technobiochip
Priority to AU44951/96A priority Critical patent/AU4495196A/en
Priority to EP96901090A priority patent/EP0750795A1/fr
Publication of WO1996021952A1 publication Critical patent/WO1996021952A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices

Definitions

  • This invention relates to thin films and structures containing them.
  • Ultra small CdS particles were formed by exposing deposited cadmium arachidate Langmuir-Blodgett bilayers to atmosphere of H 2 S. STM images of the resultant films reveals the presence of particles with sizes of about 40 - 60 A. Also voltage-current characteristics were measured by STM on the structure "tip-tunnelling gas - CdS particle - tunnelling gap - graphite substrate". Steps in voltage- current characteristics indicate the appearance of single electron process (Coulomb blockade) at room temperature.
  • the process is called monoelectronic because it is possible to distinguish current steps in V/I curve due to unitary increase in the number of electrons in the granule. Step-like behaviour of current was observed in several works at low temperature 1 5
  • the value of the temperature is very important for observing such phenomena and the following equation must hold true to allow the monitoring of steps in V/I characteristics 6 e 2 /2C > kT (2)
  • the temperature at which monoelectron phenomena can be observed is limited by the capacity of the granule and therefore by its dimensions.
  • Rough estimations assuming spherical shape, give 90 A as limiting value of the granule radius: for bigger radii Coulomb blockade cannot take place at room temperature.
  • the aim of this work was to investigate by STM a bilayer of cadmium arachidate after exposing it to H 2 S, to find granules of nanometer sizes and to measure with the STM tip local V/I characteristics on "graphite - tunnelling gap - CdS particle - tunnelling gap - tip" structure.
  • a bilayer of cadmium arachidate was transferred onto the graphite surface according to standard procedure 10 .
  • the sample was placed into a chamber, containing H 2 S, for 30 minutes.
  • STM measurements were performed using a device (MM- MDT) , allowing also to measure local V/I characteristics.
  • MM- MDT a device
  • STM tip was placed over the desired point (CdS particle, identified on previously obtained image) in constant current mode. When the tip was above this point, feedback was switched off and the tip - substrate voltage was swept from -0.5 to 0.5 V.
  • the configuration for measurements of V/I characteristics is presented in Figure 1.
  • STM image of cadmium arachidate bilayer after exposure to H 2 S atmosphere is presented in Figure 2.
  • CdS particles are well distinguishable in the picture. Sizes and shapes of the particles are not equal one another, but, in general, sizes are in the range 40 - 60 A (nevertheless it is possible to find also particles with sizes outside the range) .
  • the surface of the particles is rather flat. This fact becomes understandable if we suppose that CdS particles are small monocrystals . The hypothesis is also in agreement with light absorption data, showing the existence of the original CdS band structure in the particles after the reaction with H 2 S 8 , and with electron diffraction data, demonstrating that the lattice spacing value of the particles is the same as in bulk crystal'.
  • the surface of LB film after the reaction becomes rough due to the disturbance caused by the particles formation process. This fact is in good agreement with the decrease of the film spacing (bilayer thickness) 5 .
  • the decrease implies the declination of hydrocarbon chains from the normal direction to the film plane and so the increase of the area per molecule in the film plane. As a result of it, the total area of the film should increase, while the physical area remains the same (geometrical areas of the substrate) .
  • the mentioned contradiction seems to be responsible for the increased roughness of the LB film.
  • the value of the particle sizes is less than the one measured by electron diffraction method. The difference is likely due to the fact that in 9 the initial film of cadmium arachidate was 10 - 15 bilayers (growth of CdS crystal can involve atoms also from different film planes) , while here we have only one bilayer.
  • Distribution of the particles inside the film is not regular. Some areas contain several particles but there are regions were no particles were observed.
  • V/I characteristics of the system "graphite substrate - tunnelling gap - CdS particle - tunnelling gap - STM tip" is presented in Figure 3.
  • the characteristic was obtained by placing the tip above the CdS particle, the position of which was determined from previously acquired image. Despite some noise, steps in V/I characteristics are well distinguishable. Steps in the characteristics are equidistant and correspond to the value of voltage of about 0.2 V. Taking into account that the particles have in-plane dimensions of 40 - 60 A and their surface is flat, we can conclude, that the most probable shape of them is disk-like one and the thickness of the disk is a couple of lattice unit cells of CdS.
  • nanometer scale CdS particles were formed by exposing Cadmium Arachidate LB film to H 2 S atmosphere. There sizes measured by STM were found to be small enough to allow monoelectron phenomena. These phenomena were observed at room temperature. Rather big noise level points out that measurements were performed near boundary conditions of the validity of equation (2) . Analysis of all experimental data allows to make conclusion about the disk-like shape of the particles as the most probable one. Thus, such treatment of the cadmium arachidate films results in the creation of a new material, where nanometer scale monocrystal semiconductor particles are embedded into insulating LB matrix. This material displays new kinds of phenomena, particularly, but probably not only, - monoelectron ones, which allow to study fundamental properties of systems with decreased number of dimensions and from technological point of view can permit the construction of new types of devices, such as monoelectron transistors.
  • Ultra small CdS clusters have been directly synthesised on the very tip of a sharp metal stylus. Voltage-current characteristics measured with such stylus, brought in the proximity of another electrode, display Coulomb blockade and Coulomb staircase pointing out junction capacitances in the 10' 19 F Range.
  • the measured characteristics display irrespective the place were the tip was landed, trends like those reported in Figure 5. Such kinds of characteristics have been obtained in about 60% of the prepared samples. These kinds of features are a typical indication of the appearance of single electron phenomena and have been recently reported and discussed both for cryogenic 5,9 and room temperature 9 measurements on different kinds of quantum dots.
  • FIG 1 A scheme of the experimental setup for measuring V/I characteristics with STM tip.
  • Figure 2 STM image of cadmium arachidate LB film after the reaction with H 2 S. The image was acquired with Pt/Ir (90% - 10%) tip m constant current mode; tunnelling voltage was 2 V, tunnelling current was 0.7 nA. Image sizes are 576 x 576 A 2 . flat regions represent CdS particles.
  • Figure 3 Voltage current characteristics of the system

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Computer Hardware Design (AREA)
  • Light Receiving Elements (AREA)

Abstract

Des particules de CdS à l'échelle nanométrique sont constituées par l'exposition de structures formées de deux couches de Langmuir-Blodgett, à base d'arachidate de cadmium, à une atmosphère comprenant de l'H2S. Il en résulte des particules d'une taille inférieure à 90 angströms dans un film capable de montrer des effets monoélectriques. En synthétisant des grappes de ces particules à l'échelle nanométrique sur l'extrémité d'une pointe métallique affilée, on a fabriqué un instrument qui permet de mesurer des effets monoélectriques à température ambiante et, partant, évite d'avoir recours à un microscope à effet tunnel.
PCT/IB1996/000106 1995-01-13 1996-01-15 Dispositifs comportant des films minces WO1996021952A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU44951/96A AU4495196A (en) 1995-01-13 1996-01-15 Thin film devices
EP96901090A EP0750795A1 (fr) 1995-01-13 1996-01-15 Dispositifs comportant des films minces

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9500669.8 1995-01-13
GBGB9500669.8A GB9500669D0 (en) 1994-02-23 1995-01-13 Thin film devices

Publications (1)

Publication Number Publication Date
WO1996021952A1 true WO1996021952A1 (fr) 1996-07-18

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PCT/IB1996/000106 WO1996021952A1 (fr) 1995-01-13 1996-01-15 Dispositifs comportant des films minces

Country Status (3)

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EP (1) EP0750795A1 (fr)
AU (1) AU4495196A (fr)
WO (1) WO1996021952A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0865078A1 (fr) * 1997-03-13 1998-09-16 Hitachi Europe Limited Méthode de dépÔt de particules nanométriques
KR100434553B1 (ko) * 1997-08-27 2004-09-18 삼성전자주식회사 단일전자트랜지스터및그제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010564A1 (fr) * 1991-11-22 1993-05-27 The Regents Of The University Of California Nanocristaux semi-conducteurs lies de maniere covalente a des surfaces solides inorganiques, a l'aide de monocouches auto-assemblees
EP0576263A2 (fr) * 1992-06-24 1993-12-29 Hitachi Europe Limited Procédé pour fabriquer des nano-structures et nano-structure fabriquée selon ce procédé

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010564A1 (fr) * 1991-11-22 1993-05-27 The Regents Of The University Of California Nanocristaux semi-conducteurs lies de maniere covalente a des surfaces solides inorganiques, a l'aide de monocouches auto-assemblees
EP0576263A2 (fr) * 1992-06-24 1993-12-29 Hitachi Europe Limited Procédé pour fabriquer des nano-structures et nano-structure fabriquée selon ce procédé

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Molecular brush assembly", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 37, no. 1, January 1994 (1994-01-01), NEW YORK US, pages 261 - 262, XP000428769 *
KYUNGCHEE CHOI YI: "Metallic and semiconductor nanoparticles films generated under monolayers and between Langmuir-Blodgett films", 1993, UMI DISSERTATION SERVICES, ANN ARBOR, MICHIGAN, USA, XP002002200 *
ZULIANG DU ET AL.: "The preparation and properties of CdS colloid Langmuir-Blodgett film", THIN SOLID FILMS, vol. 210/211, no. 1/2, 15 April 1992 (1992-04-15), LAUSANNE CH, pages 404 - 406, XP000360091 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0865078A1 (fr) * 1997-03-13 1998-09-16 Hitachi Europe Limited Méthode de dépÔt de particules nanométriques
US5997958A (en) * 1997-03-13 1999-12-07 Hitachi Europe Limited Method of depositing nanometer scale particles
KR100434553B1 (ko) * 1997-08-27 2004-09-18 삼성전자주식회사 단일전자트랜지스터및그제조방법

Also Published As

Publication number Publication date
AU4495196A (en) 1996-07-31
EP0750795A1 (fr) 1997-01-02

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