WO1996021952A1 - Thin film devices - Google Patents
Thin film devices Download PDFInfo
- Publication number
- WO1996021952A1 WO1996021952A1 PCT/IB1996/000106 IB9600106W WO9621952A1 WO 1996021952 A1 WO1996021952 A1 WO 1996021952A1 IB 9600106 W IB9600106 W IB 9600106W WO 9621952 A1 WO9621952 A1 WO 9621952A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film according
- thin film
- particles
- tip
- cds
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 14
- 239000002245 particle Substances 0.000 claims abstract description 40
- 230000000694 effects Effects 0.000 claims abstract 2
- 230000001747 exhibiting effect Effects 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 28
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910001385 heavy metal Inorganic materials 0.000 claims 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- BMQVRJOWNGSIEG-UHFFFAOYSA-L calcium;icosanoate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCCCC([O-])=O BMQVRJOWNGSIEG-UHFFFAOYSA-L 0.000 claims 1
- 238000005459 micromachining Methods 0.000 claims 1
- RBHNZROBARWZDN-UHFFFAOYSA-L cadmium(2+);icosanoate Chemical compound [Cd+2].CCCCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCCCC([O-])=O RBHNZROBARWZDN-UHFFFAOYSA-L 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000008187 granular material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 239000002096 quantum dot Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- -1 fatty acids salts Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
- B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
- B05D1/202—Langmuir Blodgett films (LB films)
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
Definitions
- This invention relates to thin films and structures containing them.
- Ultra small CdS particles were formed by exposing deposited cadmium arachidate Langmuir-Blodgett bilayers to atmosphere of H 2 S. STM images of the resultant films reveals the presence of particles with sizes of about 40 - 60 A. Also voltage-current characteristics were measured by STM on the structure "tip-tunnelling gas - CdS particle - tunnelling gap - graphite substrate". Steps in voltage- current characteristics indicate the appearance of single electron process (Coulomb blockade) at room temperature.
- the process is called monoelectronic because it is possible to distinguish current steps in V/I curve due to unitary increase in the number of electrons in the granule. Step-like behaviour of current was observed in several works at low temperature 1 5
- the value of the temperature is very important for observing such phenomena and the following equation must hold true to allow the monitoring of steps in V/I characteristics 6 e 2 /2C > kT (2)
- the temperature at which monoelectron phenomena can be observed is limited by the capacity of the granule and therefore by its dimensions.
- Rough estimations assuming spherical shape, give 90 A as limiting value of the granule radius: for bigger radii Coulomb blockade cannot take place at room temperature.
- the aim of this work was to investigate by STM a bilayer of cadmium arachidate after exposing it to H 2 S, to find granules of nanometer sizes and to measure with the STM tip local V/I characteristics on "graphite - tunnelling gap - CdS particle - tunnelling gap - tip" structure.
- a bilayer of cadmium arachidate was transferred onto the graphite surface according to standard procedure 10 .
- the sample was placed into a chamber, containing H 2 S, for 30 minutes.
- STM measurements were performed using a device (MM- MDT) , allowing also to measure local V/I characteristics.
- MM- MDT a device
- STM tip was placed over the desired point (CdS particle, identified on previously obtained image) in constant current mode. When the tip was above this point, feedback was switched off and the tip - substrate voltage was swept from -0.5 to 0.5 V.
- the configuration for measurements of V/I characteristics is presented in Figure 1.
- STM image of cadmium arachidate bilayer after exposure to H 2 S atmosphere is presented in Figure 2.
- CdS particles are well distinguishable in the picture. Sizes and shapes of the particles are not equal one another, but, in general, sizes are in the range 40 - 60 A (nevertheless it is possible to find also particles with sizes outside the range) .
- the surface of the particles is rather flat. This fact becomes understandable if we suppose that CdS particles are small monocrystals . The hypothesis is also in agreement with light absorption data, showing the existence of the original CdS band structure in the particles after the reaction with H 2 S 8 , and with electron diffraction data, demonstrating that the lattice spacing value of the particles is the same as in bulk crystal'.
- the surface of LB film after the reaction becomes rough due to the disturbance caused by the particles formation process. This fact is in good agreement with the decrease of the film spacing (bilayer thickness) 5 .
- the decrease implies the declination of hydrocarbon chains from the normal direction to the film plane and so the increase of the area per molecule in the film plane. As a result of it, the total area of the film should increase, while the physical area remains the same (geometrical areas of the substrate) .
- the mentioned contradiction seems to be responsible for the increased roughness of the LB film.
- the value of the particle sizes is less than the one measured by electron diffraction method. The difference is likely due to the fact that in 9 the initial film of cadmium arachidate was 10 - 15 bilayers (growth of CdS crystal can involve atoms also from different film planes) , while here we have only one bilayer.
- Distribution of the particles inside the film is not regular. Some areas contain several particles but there are regions were no particles were observed.
- V/I characteristics of the system "graphite substrate - tunnelling gap - CdS particle - tunnelling gap - STM tip" is presented in Figure 3.
- the characteristic was obtained by placing the tip above the CdS particle, the position of which was determined from previously acquired image. Despite some noise, steps in V/I characteristics are well distinguishable. Steps in the characteristics are equidistant and correspond to the value of voltage of about 0.2 V. Taking into account that the particles have in-plane dimensions of 40 - 60 A and their surface is flat, we can conclude, that the most probable shape of them is disk-like one and the thickness of the disk is a couple of lattice unit cells of CdS.
- nanometer scale CdS particles were formed by exposing Cadmium Arachidate LB film to H 2 S atmosphere. There sizes measured by STM were found to be small enough to allow monoelectron phenomena. These phenomena were observed at room temperature. Rather big noise level points out that measurements were performed near boundary conditions of the validity of equation (2) . Analysis of all experimental data allows to make conclusion about the disk-like shape of the particles as the most probable one. Thus, such treatment of the cadmium arachidate films results in the creation of a new material, where nanometer scale monocrystal semiconductor particles are embedded into insulating LB matrix. This material displays new kinds of phenomena, particularly, but probably not only, - monoelectron ones, which allow to study fundamental properties of systems with decreased number of dimensions and from technological point of view can permit the construction of new types of devices, such as monoelectron transistors.
- Ultra small CdS clusters have been directly synthesised on the very tip of a sharp metal stylus. Voltage-current characteristics measured with such stylus, brought in the proximity of another electrode, display Coulomb blockade and Coulomb staircase pointing out junction capacitances in the 10' 19 F Range.
- the measured characteristics display irrespective the place were the tip was landed, trends like those reported in Figure 5. Such kinds of characteristics have been obtained in about 60% of the prepared samples. These kinds of features are a typical indication of the appearance of single electron phenomena and have been recently reported and discussed both for cryogenic 5,9 and room temperature 9 measurements on different kinds of quantum dots.
- FIG 1 A scheme of the experimental setup for measuring V/I characteristics with STM tip.
- Figure 2 STM image of cadmium arachidate LB film after the reaction with H 2 S. The image was acquired with Pt/Ir (90% - 10%) tip m constant current mode; tunnelling voltage was 2 V, tunnelling current was 0.7 nA. Image sizes are 576 x 576 A 2 . flat regions represent CdS particles.
- Figure 3 Voltage current characteristics of the system
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96901090A EP0750795A1 (en) | 1995-01-13 | 1996-01-15 | Thin film devices |
AU44951/96A AU4495196A (en) | 1995-01-13 | 1996-01-15 | Thin film devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9500669.8 | 1995-01-13 | ||
GBGB9500669.8A GB9500669D0 (en) | 1994-02-23 | 1995-01-13 | Thin film devices |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996021952A1 true WO1996021952A1 (en) | 1996-07-18 |
Family
ID=10767996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB1996/000106 WO1996021952A1 (en) | 1995-01-13 | 1996-01-15 | Thin film devices |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0750795A1 (en) |
AU (1) | AU4495196A (en) |
WO (1) | WO1996021952A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865078A1 (en) * | 1997-03-13 | 1998-09-16 | Hitachi Europe Limited | Method of depositing nanometre scale particles |
KR100434553B1 (en) * | 1997-08-27 | 2004-09-18 | 삼성전자주식회사 | A single electron transistor using granular nano cry stais and a fabricating method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993010564A1 (en) * | 1991-11-22 | 1993-05-27 | The Regents Of The University Of California | Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers |
EP0576263A2 (en) * | 1992-06-24 | 1993-12-29 | Hitachi Europe Limited | Method for fabricing nano-scale devices and nano-scale device fabricated by that method |
-
1996
- 1996-01-15 WO PCT/IB1996/000106 patent/WO1996021952A1/en not_active Application Discontinuation
- 1996-01-15 EP EP96901090A patent/EP0750795A1/en not_active Withdrawn
- 1996-01-15 AU AU44951/96A patent/AU4495196A/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993010564A1 (en) * | 1991-11-22 | 1993-05-27 | The Regents Of The University Of California | Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers |
EP0576263A2 (en) * | 1992-06-24 | 1993-12-29 | Hitachi Europe Limited | Method for fabricing nano-scale devices and nano-scale device fabricated by that method |
Non-Patent Citations (3)
Title |
---|
"Molecular brush assembly", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 37, no. 1, January 1994 (1994-01-01), NEW YORK US, pages 261 - 262, XP000428769 * |
KYUNGCHEE CHOI YI: "Metallic and semiconductor nanoparticles films generated under monolayers and between Langmuir-Blodgett films", 1993, UMI DISSERTATION SERVICES, ANN ARBOR, MICHIGAN, USA, XP002002200 * |
ZULIANG DU ET AL.: "The preparation and properties of CdS colloid Langmuir-Blodgett film", THIN SOLID FILMS, vol. 210/211, no. 1/2, 15 April 1992 (1992-04-15), LAUSANNE CH, pages 404 - 406, XP000360091 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865078A1 (en) * | 1997-03-13 | 1998-09-16 | Hitachi Europe Limited | Method of depositing nanometre scale particles |
US5997958A (en) * | 1997-03-13 | 1999-12-07 | Hitachi Europe Limited | Method of depositing nanometer scale particles |
KR100434553B1 (en) * | 1997-08-27 | 2004-09-18 | 삼성전자주식회사 | A single electron transistor using granular nano cry stais and a fabricating method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP0750795A1 (en) | 1997-01-02 |
AU4495196A (en) | 1996-07-31 |
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