WO1996018206B1 - Vertical field emission devices and methods of fabrication with applications to flat panel displays - Google Patents
Vertical field emission devices and methods of fabrication with applications to flat panel displaysInfo
- Publication number
- WO1996018206B1 WO1996018206B1 PCT/US1995/015760 US9515760W WO9618206B1 WO 1996018206 B1 WO1996018206 B1 WO 1996018206B1 US 9515760 W US9515760 W US 9515760W WO 9618206 B1 WO9618206 B1 WO 9618206B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cathode
- anode
- substrate
- field emission
- cavity
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 15
- 238000005530 etching Methods 0.000 claims abstract 3
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 239000007787 solid Substances 0.000 claims abstract 2
- 238000004377 microelectronic Methods 0.000 claims 8
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 230000003993 interaction Effects 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000206 photolithography Methods 0.000 abstract 1
Abstract
Vertical field emission devices (10) are described with very small anode to cathode separations. Preferred cathodes have sharp edge emitters (30) extending, outward perpendicular to the surface of the underlying substrate (12). These sharp edge emitters (30) are produced within planar photolithography by coating sacrificial conformal walls (32) and anisotropic etching. Microencapsulation is used to produce a sealed cavity under low pressure which includes space between the anode and cathode. The field emission components can be adapted for the production of light emitting field emission diodes. The individual cathode emitters can be integrated with solid state components on the substrate with each cathode being independently addressable. Arrays of closely packed light emitting, field emission diodes of the present invention are particularly suitable for use in displays. These displays would be useful for plat-panel computer displays and high definition television.
Claims
1. A field emission vacuum microelectronic component comprising:
a substrate presenting a generally planar surface;
a cathode comprising an emission projection extending outward, generally orthogonal to said substrate surface;
an anode presenting a surface generally facing said emission
projections of said cathode, said anode approaching said cathode
within a distance less than 15 μm, wherein said anode most closely
approaches said cathode in a direction generally orthogonal to said surface of said substrate; structure defining a surface forming a fully enclosed cavity, said cavity surface being spaced apart from said emission projections of said cathode and containing said surface of said anode, wherein said cavity is in isolation from atmosphere surrounding said component.
2. The field emission microelectronic component of claim 1 wherein
said anode approaching said cathode within a distance less than 5 μm.
3. The field emission microelectronic component of claim 1 wherein
said anode approaches said cathode within a distance less than 0.5 μm.
4. The field emission microelectronic component of claim 1 wherein said substrate is a single crystal silicon wafer.
5. The field emission microelectronic component of claim 1 wherein said anode is at least partially transparent to low energy electrons, said component further comprising: a phosphor capable of being luminescent upon interaction with low energy electrons.
6. A light emitting, field emission diode comprising: a substrate presenting a surface; a cathode projecting from said surface of said substrate; an anode presenting two surfaces oriented towards said cathode with one of said surfaces being at least partially transparent to visible light and the second of said surfaces being at least partially transparent to relatively low energy electrons; structure defining a surface forming a fully enclosed cavity, said cavity surface being spaced apart from said cathode and containing said surface of said anode, wherein said cavity is in isolation from atmosphere surrounding the device; -27-
a phosphor capable of being luminescent upon interaction with low energy electrons, said phosphor being located between said two surfaces of said anode oriented towards said cathode.
7. A method of producing a field emission microelectronic component comprising: providing a substrate presenting a surface; photolithographing, upon said surface of said substrate, layers comprising a cathode, a sacrificial layer, an anode most closely approaching said cathode in a direction generally orthogonal relative to said substrate, and one or more insulating layers including an insulating cover layer completely covering said sacrificial layer, wherein said anode approaches said cathode within
a distance less than 15 μm from said cathode;
etching a small channel within said insulating cover layer to expose a small portion of said sacrificial layer in a vicinity away from said cathode and said anode; chemically removing said sacrificial layer to expose a cavity defined by the structure surrounding said sacrificial layer prior to the removal of the sacrificial layer; and sealing said small channel under vacuum conditions.
8. A method of producing a field emission microelectronic component comprising: -28-
providing a substrate presenting a surface; producing a sacrificial layer using photolithographic techniques to conform to side walls to support sharp emission projections oriented generally perpendicular to said surface of said substrate; coating said conformal side wall with a conducting layer; performing an anisotropic etching to form sharp edge emitters on the cathode emission projection; photolithographing layers comprising a completed sacrificial layer, an anode most closely approaching said cathode in a direction generally orthogonal with respect to said substrate, and one or more insulating layers including an insulating cover layer; chemically removing said sacrificial layer to expose a cavity, a portion of said cavity defining a gap disposed between the sharp edge emitters on the cathode emission protection and the anode; sealing said cavity under vacuum conditions.
9. A solid state electronic device comprising: a plurality of field emission microelectronic components operably integrated into a surface of a silicon substrate such that each emission cathode is individually addressable, wherein each
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/353,402 | 1994-12-09 | ||
| US08/353,402 US5714837A (en) | 1994-12-09 | 1994-12-09 | Vertical field emission devices and methods of fabrication with applications to flat panel displays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1996018206A1 WO1996018206A1 (en) | 1996-06-13 |
| WO1996018206B1 true WO1996018206B1 (en) | 1996-08-08 |
Family
ID=23388938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1995/015760 WO1996018206A1 (en) | 1994-12-09 | 1995-12-05 | Vertical field emission devices and methods of fabrication with applications to flat panel displays |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5714837A (en) |
| WO (1) | WO1996018206A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5584740A (en) * | 1993-03-31 | 1996-12-17 | The United States Of America As Represented By The Secretary Of The Navy | Thin-film edge field emitter device and method of manufacture therefor |
| FR2747839B1 (en) * | 1996-04-18 | 1998-07-03 | Pixtech Sa | FLAT VISUALIZATION SCREEN WITH HYDROGEN SOURCE |
| DE69621017T2 (en) | 1996-10-04 | 2002-10-31 | St Microelectronics Srl | Manufacturing method of a flat field emission display and display manufactured by this method |
| US6603257B1 (en) * | 1999-05-27 | 2003-08-05 | University Of North Carolina At Charlotte | Cathodo-/electro-luminescent device and method of fabricating a cathodo-/electro-luminescent device using porous silicon/porous silicon carbide as an electron emitter |
| TW439303B (en) * | 1999-11-22 | 2001-06-07 | Nat Science Council | Manufacturing method of field emission device |
| US6153271A (en) * | 1999-12-30 | 2000-11-28 | General Vacuum, Inc. | Electron beam evaporation of transparent indium tin oxide |
| JP4323679B2 (en) * | 2000-05-08 | 2009-09-02 | キヤノン株式会社 | Electron source forming substrate and image display device |
| US20060103299A1 (en) * | 2004-11-15 | 2006-05-18 | The Hong Kong University Of Science And Technology | Polycrystalline silicon as an electrode for a light emitting diode & method of making the same |
| TWI528149B (en) | 2011-12-14 | 2016-04-01 | 英特爾股份有限公司 | Apparatus with thermal solution and method with the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8700834A (en) * | 1987-04-09 | 1988-11-01 | Philips Nv | DIODE GUN WITH COMPOSITE ANODE. |
| US4855636A (en) * | 1987-10-08 | 1989-08-08 | Busta Heinz H | Micromachined cold cathode vacuum tube device and method of making |
| JP3083547B2 (en) * | 1990-07-12 | 2000-09-04 | 株式会社日立製作所 | Semiconductor integrated circuit device |
| DE69205640T2 (en) * | 1991-08-01 | 1996-04-04 | Texas Instruments Inc | Process for the production of a microelectronic component. |
| US5457355A (en) * | 1993-12-01 | 1995-10-10 | Sandia Corporation | Asymmetrical field emitter |
-
1994
- 1994-12-09 US US08/353,402 patent/US5714837A/en not_active Expired - Fee Related
-
1995
- 1995-12-05 WO PCT/US1995/015760 patent/WO1996018206A1/en active Application Filing
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