WO1995018353A1 - Procede et appareil de controle de films minces - Google Patents

Procede et appareil de controle de films minces Download PDF

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Publication number
WO1995018353A1
WO1995018353A1 PCT/US1993/012609 US9312609W WO9518353A1 WO 1995018353 A1 WO1995018353 A1 WO 1995018353A1 US 9312609 W US9312609 W US 9312609W WO 9518353 A1 WO9518353 A1 WO 9518353A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
substrate
rotating
light signal
fiber
Prior art date
Application number
PCT/US1993/012609
Other languages
English (en)
Inventor
Wallace T. Y. Tang
Original Assignee
Tang Wallace T Y
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tang Wallace T Y filed Critical Tang Wallace T Y
Priority to JP51799495A priority Critical patent/JP3993888B2/ja
Priority to PCT/US1993/012609 priority patent/WO1995018353A1/fr
Publication of WO1995018353A1 publication Critical patent/WO1995018353A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

L'invention se rapporte à une technique et à un appareil permettant d'effectuer le contrôle et la mesure optique d'un film mince (11) subissant des variations d'épaisseur et d'autres modifications lorsqu'ils sont en rotation (10). Un signal optique est transmis depuis la zone de contrôle dans l'axe de rotation (6) et est découplé depuis la zone de rotation contrôlée. Le signal peut être ensuite analysé (12) afin de déterminer un point limite par rapport au procédé planar. L'invention fait appel à des techniques de mesure optique interférométrique et spectrophotométrique utilisées dans le contrôle du point limite in situ en temps réel du procédé planar de polissage chimique-mécanique, dans la fabrication de semi-conducteurs ou de divers dispositifs optiques.
PCT/US1993/012609 1993-12-28 1993-12-28 Procede et appareil de controle de films minces WO1995018353A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP51799495A JP3993888B2 (ja) 1993-12-28 1993-12-28 薄膜を監視するための方法および装置
PCT/US1993/012609 WO1995018353A1 (fr) 1993-12-28 1993-12-28 Procede et appareil de controle de films minces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1993/012609 WO1995018353A1 (fr) 1993-12-28 1993-12-28 Procede et appareil de controle de films minces

Publications (1)

Publication Number Publication Date
WO1995018353A1 true WO1995018353A1 (fr) 1995-07-06

Family

ID=22237334

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1993/012609 WO1995018353A1 (fr) 1993-12-28 1993-12-28 Procede et appareil de controle de films minces

Country Status (2)

Country Link
JP (1) JP3993888B2 (fr)
WO (1) WO1995018353A1 (fr)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068539A (en) * 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
US6108091A (en) * 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
US6146248A (en) * 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6146242A (en) * 1999-06-11 2000-11-14 Strasbaugh, Inc. Optical view port for chemical mechanical planarization endpoint detection
US6319093B1 (en) 2001-02-06 2001-11-20 International Business Machines Corporation Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement
US6361646B1 (en) 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6489624B1 (en) 1997-07-18 2002-12-03 Nikon Corporation Apparatus and methods for detecting thickness of a patterned layer
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6579149B2 (en) 2001-02-06 2003-06-17 International Business Machines Corporation Support and alignment device for enabling chemical mechanical polishing rinse and film measurements
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6806970B2 (en) 1998-04-21 2004-10-19 Hitachi, Ltd. Thin film thickness measuring method and apparatus, and method and apparatus for manufacturing a thin film device using the same
US6916225B2 (en) 2000-01-25 2005-07-12 Nikon Corporation Monitor, method of monitoring, polishing device, and method of manufacturing semiconductor wafer
US6930782B1 (en) 2003-03-28 2005-08-16 Lam Research Corporation End point detection with imaging matching in semiconductor processing
US6934040B1 (en) 1999-05-24 2005-08-23 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
KR100673880B1 (ko) * 2000-07-20 2007-01-25 주식회사 하이닉스반도체 광학적 방법을 이용한 금속막 두께 측정 장치 및 그를이용한 금속막 두께 측정 방법
US7169016B2 (en) 2005-05-10 2007-01-30 Nikon Corporation Chemical mechanical polishing end point detection apparatus and method
CN110617786A (zh) * 2018-06-18 2019-12-27 凯斯科技股份有限公司 垫监测装置及包括其的垫监测系统、垫监测方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6479309B1 (en) * 2001-05-25 2002-11-12 Advanced Micro Devices, Inc. Method and apparatus for determining process layer conformality
US7312154B2 (en) * 2005-12-20 2007-12-25 Corning Incorporated Method of polishing a semiconductor-on-insulator structure
KR101138757B1 (ko) * 2010-08-10 2012-04-24 삼성중공업 주식회사 도막 측정 장치
JP2017075791A (ja) * 2015-10-13 2017-04-20 富士通株式会社 方法及び装置
CN114234821A (zh) * 2021-12-20 2022-03-25 南京大学 一种膜电极厚度检测装置及检测方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623813A (en) * 1967-12-21 1971-11-30 Balzers Patent Beteilig Ag Method for monitoring temperature variations of radiation-permeable substrates for supporting thin coatings applied by vacuum deposition
US4618262A (en) * 1984-04-13 1986-10-21 Applied Materials, Inc. Laser interferometer system and method for monitoring and controlling IC processing
US4998021A (en) * 1988-11-18 1991-03-05 Dainippon Screen Mfg. Co., Ltd. Method of detecting an end point of surface treatment
US5046849A (en) * 1987-06-23 1991-09-10 U.S. Philips Corporation Device having an exchangeable substrate sleeve for measuring layer thickness

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623813A (en) * 1967-12-21 1971-11-30 Balzers Patent Beteilig Ag Method for monitoring temperature variations of radiation-permeable substrates for supporting thin coatings applied by vacuum deposition
US4618262A (en) * 1984-04-13 1986-10-21 Applied Materials, Inc. Laser interferometer system and method for monitoring and controlling IC processing
US5046849A (en) * 1987-06-23 1991-09-10 U.S. Philips Corporation Device having an exchangeable substrate sleeve for measuring layer thickness
US4998021A (en) * 1988-11-18 1991-03-05 Dainippon Screen Mfg. Co., Ltd. Method of detecting an end point of surface treatment

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6108091A (en) * 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
US6146248A (en) * 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6261155B1 (en) 1997-05-28 2001-07-17 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6621584B2 (en) 1997-05-28 2003-09-16 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6489624B1 (en) 1997-07-18 2002-12-03 Nikon Corporation Apparatus and methods for detecting thickness of a patterned layer
US6068539A (en) * 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
US6254459B1 (en) 1998-03-10 2001-07-03 Lam Research Corporation Wafer polishing device with movable window
US6806970B2 (en) 1998-04-21 2004-10-19 Hitachi, Ltd. Thin film thickness measuring method and apparatus, and method and apparatus for manufacturing a thin film device using the same
US6361646B1 (en) 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6654132B1 (en) 1999-05-24 2003-11-25 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US7042581B2 (en) 1999-05-24 2006-05-09 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6934040B1 (en) 1999-05-24 2005-08-23 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6488568B1 (en) 1999-06-11 2002-12-03 Lam Research Corporation Optical view port for chemical mechanical planarization endpoint detection
US6146242A (en) * 1999-06-11 2000-11-14 Strasbaugh, Inc. Optical view port for chemical mechanical planarization endpoint detection
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6916225B2 (en) 2000-01-25 2005-07-12 Nikon Corporation Monitor, method of monitoring, polishing device, and method of manufacturing semiconductor wafer
KR100673880B1 (ko) * 2000-07-20 2007-01-25 주식회사 하이닉스반도체 광학적 방법을 이용한 금속막 두께 측정 장치 및 그를이용한 금속막 두께 측정 방법
US6319093B1 (en) 2001-02-06 2001-11-20 International Business Machines Corporation Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement
US6579149B2 (en) 2001-02-06 2003-06-17 International Business Machines Corporation Support and alignment device for enabling chemical mechanical polishing rinse and film measurements
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
US6930782B1 (en) 2003-03-28 2005-08-16 Lam Research Corporation End point detection with imaging matching in semiconductor processing
US7169016B2 (en) 2005-05-10 2007-01-30 Nikon Corporation Chemical mechanical polishing end point detection apparatus and method
CN110617786A (zh) * 2018-06-18 2019-12-27 凯斯科技股份有限公司 垫监测装置及包括其的垫监测系统、垫监测方法

Also Published As

Publication number Publication date
JP3993888B2 (ja) 2007-10-17
JPH09511328A (ja) 1997-11-11

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