WO1995001651A1 - Moisture barrier for plastic package with heat spreader - Google Patents
Moisture barrier for plastic package with heat spreader Download PDFInfo
- Publication number
- WO1995001651A1 WO1995001651A1 PCT/US1994/006906 US9406906W WO9501651A1 WO 1995001651 A1 WO1995001651 A1 WO 1995001651A1 US 9406906 W US9406906 W US 9406906W WO 9501651 A1 WO9501651 A1 WO 9501651A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- heat spreader
- leadframe
- fingers
- face
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the invention relates to the well-known molded plastic power package housings.
- An improved power rating is achieved by the inclusion of metal heat spreader which greatly increases the device ability to dissipate heat and thereby increases the power
- the stepped edge of the heat spreader in contact with the plastic forms an extended seal length and provides a greatly improved metal-to-plastic interface.
- the stepped edge prevents the heat spreader from moving in relation to the mold compound and thus prevents the seal between the stepped edge and mold compound from separating from each other. This protects the integrity of the seal betweem the heat spreader and mold compound in the area of the step; and prevents moisture incursion from getting to the silicon die. If contaminated moisture gets to silicon die via passages along the heat spreader edge, the moisture can cause corrosion failures. As a result, the moisture barrier is greatly improved and will remain so even when the structure is thermally cycled.
- Figure 1 is a partially cut away section of a plastic package incorporating a heat spreader using the invention.
- Figure 2 is a cross section portion showing of the figure 1 structuture expanded for clarity.
- Figure 3 is a block diagram showing the assembly process employed in practicing the invention.
- the device shown in figure 1 is a conventional plastic leaded chip carrier (PLCC) 10 which incorporates a heat spreader 11.
- PLCC plastic leaded chip carrier
- the structure has been partially cut away to show the relationship of the heat spreader 11, leadframe 12, semiconductor chip
- Figure 2 is an expanded version showing the details of the structure.
- Heat spreader 11 is formed to have a step, as shown, when it is initially fabricated. This step acts to key the heat spreader into the molded plastic 14 which completes the housing. In addition to the keying action, the step acts to extend the metal-to-plastic interface thereby extending the path length over which moisture would have to pass to enter the housing. One important factor is the horizontal extension of the interface. Even if thermal cycling causes the plastic to break away from the vertical faces, adhesion will remain on the horizontal portion thereby retaining the moisture barrier integrity.
- FIG. 3 is a block diagram showing the process that is associated with the invention.
- the silicon IC chip 13 is formed conventionally.
- heat spreader 11 is formed from copper stock to have the stepped periphery, as shown in figures 1 and 2.
- the leadframe is formed. This is typically in the form of a tape that contains a succession of patterns.
- the previously formed leadframe 12 is bonded to the heat spreader in insulative fashion.
- the leadframe fingers are formed to have a central opening that is larger than the chip to be bonded.
- the leadframe fingers form an inner array that will surround the outside of the chip periphery.
- the leadframe fingers are bonded in block 23 using an adhesive tape 15.
- a polyimide sheet is employed having an acrylic adhesive on both faces.
- This tape is formed as a ring having an outer diameter matching the periphery of the heat spreader and an inner diameter matching the central leadframe finger array opening.
- the lead frame bonding is achieved by applying the tape to the heat spreader and then pressing the leadframe fingers against the tape by means of a heated block. The heat and pressure activates the adhesive.
- the IC chip is mounted, or bonded, to the heat spreader in block 24. This step is accomplished using conventional soldering conductive or non-electrical conductive adhesive. Essentially, the chip-to-heat spreader bond is thermally conductive.
- bond wires 16 are employed conventionally to interconnect leadframe 12 fingers to the IC chip 13 bonding pads.
- the assembled heat spreader, IC chip and leadframe, with bonded and interconnected fingers are placed in a transfer mold cavity (not shown) where the plastic housing 14 is formed.
- FIGS 1 and 2 disclose the well known PLCC, other package forms could be employed.
- the pin grid array disclosed in patent 4,868,349 could be employed.
- the leads could be bent into the gull-wing form employed in the plastic quad flat pack (PQFP) or the small outline IC (SOIC).
- PQFP plastic quad flat pack
- SOIC small outline IC
- Figures 1 and 2 also show the package pins bent around the package edges to place the heat spreader on the bottom. If desired, the pins could be bent the other way so that the heat spreader is on top. This can facilitate the installation of secondary heat sink means after the package has been soldered into its final position.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
A power package is provided for a semiconductor device. A heat spreader (11) is formed to have a stepped edge that acts to physically lock it to the encapsulating plastic (14) that is molded around it. The semiconductor device (13) is thermally or non-thermally bonded to the heat spreader (11) and leadframe fingers (12) are bonded in insulating relationship to the heat spreader (11) to form an array that closely surrounds the semiconductor device (13). The leadframe fingers (12) are then connected to the semiconductor device (13) bonding pads. Then, a plastic encapsulant (14) is transfer molded around the stepped edge of the heat spreader (11) and shaped to cover the semiconductor device (13), interconnection means (16) and leadframe fingers (12). However, the encapsulant (14) is excluded from the opposite heat spreader (11) face which is then available at the package exterior. The stepped edge of the heat spreader (11) is thereby locked to the plastic encapsulant (14) to form a reliable moisture barrier seal.
Description
MOISTURE BARRIER FOR PLASTIC PACKAGE WITH HEAT SPREADER
Background of the Invention
The invention relates to the well-known molded plastic power package housings. An improved power rating is achieved by the inclusion of metal heat spreader which greatly increases the device ability to dissipate heat and thereby increases the power
rating. A basic prior art structure is shown in United States patent 4,868,349, which is assigned to the assignee of the present invention. The teaching in this patent is incorporated herein by reference. While the patent teaching relates to a plastic pin grid array (PPG A), a metal heat spreader is shown wherein the face of the heat spreader is available at the plastic package face. This facilitates the removal of heat by secondary means which can be applied to the assembled package. It can be seen that the molded plastic embraces the peripheral edges of the heat spreader. If the heat spreader is made as thin as would be desired from a heat sink consideration, the length of the seal between the metal and plastic would be relatively small. This could lead to a source of moisture ingress in the packaged device. That is, moisture can penetrate the package at the plastic to metal interface where the seal is nonhermetic. Such moisture penetration is more likely after the package has been thermally cycled either in a testing environment or in actual use.
Summary of the Invention It is an object of the invention to improve the seal between a metal heat spreader and the molded plastic encapsulant in a semiconductor device package.
It is a further object of the invention to shape the peripheral edges of a metal heat spreader in a plastic encapsulated semiconductor device package whereby the moisture seal between the plastic and the heat spreader is improved.
These and other objects are achieved by forming a step in the edges of a metal heat spreader when it is first fabricated. A leadframe is attached in insulated relationship to the heat spreader so that the edges of the leadframe fingers form an array that surrounds the area where a semiconductor chip will be attached. Then, a semiconductor chip is secured to the heat spreader. The chip bonding pads are then interconnected with the leadframe fingers with conventional wire bonds. Then, the heat spreader, with its attached chip and leadframe assembly, is placed in a transfer mold so that one face of the mold presses against the exposed face of the heat spreader and a plastic encapsulant transfer molded so that the plastic flows into contact with the stepped edge of the heat spreader. Plastic is prevented from forming on the heat spreader face due to its contact with the mold face. After molding, the treatment of the product is conventional for molded plastic products.
The stepped edge of the heat spreader in contact with the plastic forms an extended seal length and provides a greatly improved metal-to-plastic interface. In addition, the stepped edge prevents the heat spreader from moving in relation to the mold compound and thus prevents the seal between the stepped edge and mold compound from separating from each other. This protects the integrity of the seal betweem the heat spreader
and mold compound in the area of the step; and prevents moisture incursion from getting to the silicon die. If contaminated moisture gets to silicon die via passages along the heat spreader edge, the moisture can cause corrosion failures. As a result, the moisture barrier is greatly improved and will remain so even when the structure is thermally cycled. Brief Description of the Drawing
Figure 1 is a partially cut away section of a plastic package incorporating a heat spreader using the invention.
Figure 2 is a cross section portion showing of the figure 1 structuture expanded for clarity. Figure 3 is a block diagram showing the assembly process employed in practicing the invention.
Description of the Invention
The device shown in figure 1 is a conventional plastic leaded chip carrier (PLCC) 10 which incorporates a heat spreader 11. The structure has been partially cut away to show the relationship of the heat spreader 11, leadframe 12, semiconductor chip
13 and plastic encapsulant 14. Figure 2 is an expanded version showing the details of the structure.
Heat spreader 11 is formed to have a step, as shown, when it is initially fabricated. This step acts to key the heat spreader into the molded plastic 14 which completes the housing. In addition to the keying action, the step acts to extend the
metal-to-plastic interface thereby extending the path length over which moisture would have to pass to enter the housing. One important factor is the horizontal extension of the interface. Even if thermal cycling causes the plastic to break away from the vertical faces, adhesion will remain on the horizontal portion thereby retaining the moisture barrier integrity.
Figure 3 is a block diagram showing the process that is associated with the invention. In block 20 the silicon IC chip 13 is formed conventionally. In block 21 heat spreader 11 is formed from copper stock to have the stepped periphery, as shown in figures 1 and 2. As shown in block 22, the leadframe is formed. This is typically in the form of a tape that contains a succession of patterns. In block 23 the previously formed leadframe 12 is bonded to the heat spreader in insulative fashion. In the forming step of block 22 the leadframe fingers are formed to have a central opening that is larger than the chip to be bonded. Thus, the leadframe fingers form an inner array that will surround the outside of the chip periphery. The leadframe fingers are bonded in block 23 using an adhesive tape 15. Desirably, a polyimide sheet is employed having an acrylic adhesive on both faces. This tape is formed as a ring having an outer diameter matching the periphery of the heat spreader and an inner diameter matching the central leadframe finger array opening. The lead frame bonding is achieved by applying the tape to the heat spreader and then pressing the leadframe fingers against the tape by means of a heated block. The heat and pressure activates the adhesive. The IC chip is mounted, or bonded, to the heat spreader in block 24. This step
is accomplished using conventional soldering conductive or non-electrical conductive adhesive. Essentially, the chip-to-heat spreader bond is thermally conductive. Then, as shown in block 25, bond wires 16 are employed conventionally to interconnect leadframe 12 fingers to the IC chip 13 bonding pads. At this point, as set forth in block 26, the assembled heat spreader, IC chip and leadframe, with bonded and interconnected fingers, are placed in a transfer mold cavity (not shown) where the plastic housing 14 is formed. As pointed
out in patent 4,868,349, the heat spreader is pressed against the mold cavity face so that no plastic is applied to the heat spreader surface thus exposing the heat dissipating surface. Finally, as shown in block 27, the packaged semiconductor device is excised from the assembly leadframe and the leads bent into their desired shape. Also, if molding dambars were present, they are sheared away.
While figures 1 and 2 disclose the well known PLCC, other package forms could be employed. For example, the pin grid array disclosed in patent 4,868,349 could be employed. Also, the leads could be bent into the gull-wing form employed in the plastic quad flat pack (PQFP) or the small outline IC (SOIC). While the preferred embodiment shows the use of wire bonds for connecting the IC chip to the leadframe fingers, a metal spider that facilitates thermocompression gang bonding could be used. Figures 1 and 2 also show the package pins bent around the package edges to place the heat spreader on the bottom. If desired, the pins could be bent the other way so that the heat spreader is on top. This can facilitate the installation of secondary heat sink means after the package has
been soldered into its final position.
The invention has been described and a preferred embodiment detailed. Alternatives have also been described. When a person skilled in the art reads the foregoing description, other alternatives and equivalents, within the spirit and intent of the invention, will be apparent. Accordingly, it is intended that the scope of the invention be limited only by the claims that follow.
Claims
1. A molded semiconductor device power package comprising: a metal heat spreader shaped to have a stepped peripheral edge; a semiconductor device secured to one face of said heat spreader in heat transfer relationship;
a metal leadframe having finger extensions secured to said one face of said heat spreader in insulating relationship, said fingers forming an array that surrounds said semiconductor device; and plastic encapsulating material covering and surrounding said one face of said heat spreader whereby said stepped edge becomes locked into said plastic and said semiconductor device, along with said leadframe fingers, become encapsulated while leaving the other face of said heat spreader exposed.
2. The molded semiconductor device power package of claim 1 further including conductive connection means extending between said semiconductor device and said leadframe fingers to provide electrical connections that are also covered and encapsulated by said plastic.
3. The molded semiconductor device power package of claim 2 wherein said conductive connection means comprise wire bonds.
4. The molded semiconductor device power package of claim 2 wherein said conductive connections means comprise a metal spider.
5. The molded semiconductor device power package of claim 1 wherein said metal heat spreader and said leadframe are composed of copper and said semiconductor device is a silicon chip.
6. The process for forming a molded semiconductor device power package comprising the steps: forming a semiconductor device; forming a metal heat spreader to have a stepped peripheral edge; forming a leadframe having inwardly extending fingers arrayed to form an inner opening slightly larger than said semiconductor device; securing said leadframe to said one face of said metal heat spreader in insulating relationship therewith and located so that said inwardly extending fingers surround said semiconductor device; securing said semiconductor device to one face of said metal heat spreader in heat transfer relationship therewith; and transfer molding plastic encapsulation material around said heat spreader stepped edge and said one face thereof whereby said molded plastic encapsulation is keyed to said heat spreader and covers said semiconductor device and leadframe fingers as an encapsulant.
7. The process of claim 6 including the additional step of electrically interconnecting said semiconductor device and said leadframe fingers.
8. The process of claim 7 wherein said electrically connecting is in the form of wire bonding.
9. The process of claim 7 wherein said electrically interconnecting is in the form of a thermocompression bonding a metal spider.
10. The process of claim 6 wherein said step of securing said
leadframe is achieved by applying an insulating film with cement on both faces to said heat spreader and then heating and pressing said leadframe against said film.
11. The process of claim 10 wherein said heating is provided by pressing a hot block against said leadframe fingers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950705859A KR960703273A (en) | 1993-07-01 | 1994-06-17 | MOISTURE BARRIER FOR PLASTIC PACKAGE WITH HEAT SPREADER |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8527093A | 1993-07-01 | 1993-07-01 | |
| US08/085,270 | 1993-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1995001651A1 true WO1995001651A1 (en) | 1995-01-12 |
Family
ID=22190520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1994/006906 WO1995001651A1 (en) | 1993-07-01 | 1994-06-17 | Moisture barrier for plastic package with heat spreader |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR960703273A (en) |
| WO (1) | WO1995001651A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6800131B2 (en) | 1997-08-21 | 2004-10-05 | United States Gypsum Company | Gypsum-containing board and tile, and method for producing gypsum-containing board and tile |
| US7758980B2 (en) | 1997-08-21 | 2010-07-20 | United States Gypsum Company | Gypsum-containing board and tile, and method for producing same |
| DE102013217303A1 (en) * | 2013-08-30 | 2015-03-05 | Robert Bosch Gmbh | Punching grid for a premold sensor housing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59207645A (en) * | 1983-05-11 | 1984-11-24 | Toshiba Corp | Semiconductor device and lead frame |
| EP0253295A1 (en) * | 1986-07-09 | 1988-01-20 | Tektronix, Inc. | Thermally enhanced LSI integrated circuit package |
| JPH02238652A (en) * | 1989-03-13 | 1990-09-20 | Hitachi Ltd | Resin-sealed semiconductor device |
| US5139973A (en) * | 1990-12-17 | 1992-08-18 | Allegro Microsystems, Inc. | Method for making a semiconductor package with the distance between a lead frame die pad and heat spreader determined by the thickness of an intermediary insulating sheet |
-
1994
- 1994-06-17 WO PCT/US1994/006906 patent/WO1995001651A1/en active Application Filing
- 1994-06-17 KR KR1019950705859A patent/KR960703273A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59207645A (en) * | 1983-05-11 | 1984-11-24 | Toshiba Corp | Semiconductor device and lead frame |
| EP0253295A1 (en) * | 1986-07-09 | 1988-01-20 | Tektronix, Inc. | Thermally enhanced LSI integrated circuit package |
| JPH02238652A (en) * | 1989-03-13 | 1990-09-20 | Hitachi Ltd | Resin-sealed semiconductor device |
| US5139973A (en) * | 1990-12-17 | 1992-08-18 | Allegro Microsystems, Inc. | Method for making a semiconductor package with the distance between a lead frame die pad and heat spreader determined by the thickness of an intermediary insulating sheet |
Non-Patent Citations (2)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN vol. 009, no. 069 (E - 305) 29 March 1985 (1985-03-29) * |
| PATENT ABSTRACTS OF JAPAN vol. 014, no. 553 (E - 1010) 7 December 1990 (1990-12-07) * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6800131B2 (en) | 1997-08-21 | 2004-10-05 | United States Gypsum Company | Gypsum-containing board and tile, and method for producing gypsum-containing board and tile |
| US7244304B2 (en) | 1997-08-21 | 2007-07-17 | United States Gypsum Company | Gypsum-containing board and tile, and method for producing same |
| US7425236B2 (en) | 1997-08-21 | 2008-09-16 | United States Gypsum Company | Gypsum-containing board and tile, and method for producing same |
| US7758980B2 (en) | 1997-08-21 | 2010-07-20 | United States Gypsum Company | Gypsum-containing board and tile, and method for producing same |
| US7964034B2 (en) | 1997-08-21 | 2011-06-21 | United States Gypsum Company | Gypsum-containing product and method for producing same |
| US8142914B2 (en) | 1997-08-21 | 2012-03-27 | United States Gypsum Company | Gypsum-containing product and gypsum board |
| US8303709B2 (en) | 1997-08-21 | 2012-11-06 | United States Gypsum Company | Gypsum-containing product |
| US8500904B2 (en) | 1997-08-21 | 2013-08-06 | United States Gypsum Company | Gypsum-containing product |
| US8974597B2 (en) | 1997-08-21 | 2015-03-10 | United States Gypsum Company | Gypsum-containing product |
| DE102013217303A1 (en) * | 2013-08-30 | 2015-03-05 | Robert Bosch Gmbh | Punching grid for a premold sensor housing |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960703273A (en) | 1996-06-19 |
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