WO1994028592A1 - Circuits hyperfrequence accordables supraconducteurs/ferroelectriques a coefficient de temperature eleve - Google Patents

Circuits hyperfrequence accordables supraconducteurs/ferroelectriques a coefficient de temperature eleve Download PDF

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Publication number
WO1994028592A1
WO1994028592A1 PCT/US1994/005656 US9405656W WO9428592A1 WO 1994028592 A1 WO1994028592 A1 WO 1994028592A1 US 9405656 W US9405656 W US 9405656W WO 9428592 A1 WO9428592 A1 WO 9428592A1
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Prior art keywords
ferroelectric
afe
line
control circuit
resonator
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PCT/US1994/005656
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English (en)
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WO1994028592B1 (fr
Inventor
Daniel Bruce Laubacher
Zhi-Yuan Shen
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E.I. Du Pont De Nemours And Company
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Publication of WO1994028592A1 publication Critical patent/WO1994028592A1/fr
Publication of WO1994028592B1 publication Critical patent/WO1994028592B1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H01P1/2039—Galvanic coupling between Input/Output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/181—Phase-shifters using ferroelectric devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2007—Filtering devices for biasing networks or DC returns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/08—Strip line resonators
    • H01P7/082—Microstripline resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/08—Strip line resonators
    • H01P7/084—Triplate line resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/08—Strip line resonators
    • H01P7/086—Coplanar waveguide resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/08—Strip line resonators
    • H01P7/088—Tunable resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators

Definitions

  • This invention relates to high temperature superconducting microwave and millimeter circuits using ferroelectrics or antiferroelectrics to achieve electronic tunable devices and their applications.
  • Ferroelectrics are materials which can possess an electric polarization in the absence of an externally applied electric field, together with the property that the direction of the polarization may be reversed by an electric field [1] .
  • the dielectric constant of ferroelectrics can be changed by varying the externally applied electric field.
  • a ferroelectric displacement is not the only type of instability that may develop in a dielectric crystal.
  • These deformations can be accompanied by changes in the dielectric constant even if they do not give a spontaneous polarization.
  • One type of deformation is call antiferroelectric and has neighboring lines of ions displaced in opposite senses.
  • ferroelectric (FE) and antiferroelectric (AFE) materials are lattice matched with high temperature superconductors (HTS) such as YBaCuO (123) and TIBaCaCuO (2212) and can be epitaxially grown to form HTS/FE or AFE/HTS multi-layer structures .
  • HTS high temperature superconductors
  • the present invention provides a variety of microwave and millimeter wave (hereafter referring to radiofrequency or RF) circuits and devices with unprecedented performance through the use of a combination of HTS materials with FE or AFE materials.
  • Figures 1 (a) and (b) show lumpy element control circuits for tunable microwave and millimeter wave devices: (a) is the "drop-in” form; (b) is the integrated circuit form.
  • Figures 2 (a) , (b) , (c) and (d) show 1-stage chokes for tunable microwave and millimeter wave devices: (a) , is a ⁇ /4 single stub; (b) is a ⁇ /4 double stub; (c) is a ⁇ /4 single radial choke; (d) is a ⁇ /4 double radial choke.
  • Figures 3 (a) , (b) , (c) and (d) show 2-stage chokes for tunable microwave and millimeter wave devices: (a) is a ⁇ /4 single stub; (b) is a ⁇ /4 double stub; (c) is a ⁇ /4 single radial choke; (d) is a ⁇ /4 double radial choke.
  • Figures 4 (a) , (b) , (c) and (d) show control circuits in coplanar line form wherein the control is through the center line.
  • Figures 5 (a) , (b) , (c) and (d) show control circuits in coplanar line form wherein the control is through one of the ground plates.
  • Figures 6 (a) , (b) and (c) show control circuits in microstrip line form wherein the control line is attached to the line via a choke.
  • Figures 7 (a) , (b) and (c) show control circuits in microstrip line form wherein the control is through a pair of electrodes.
  • Figures 8 (a) , (b) and (c) show control circuits in microstrip line form wherein the control is through an additional plate.
  • Figures 9 (a) , (b) , (c) , (d) and (e) show control circuits in parallel line form: in (a) , the parallel lines are on the same side of the substrate; in (b) , the parallel lines are on the opposite sides of the substrate.
  • Figures 10 (a) and (b) show an example of a FE or AFE tunable resonator in a coplanar line form.
  • Figure 11 (a) and (b) show an example of a FE or AFE tunable delay line/phase shifter in a microstrip line form.
  • Figure 12 shows an example of a FE or AFE tunable bandpass filter in a microstrip line form.
  • Figures 13 (a) , (b) , (c) , (d) and (e) show a FE or AFE tunable HTS-dielectric-HTS resonator: (a) shows the entire dielectric is FE or AFE material; (b) shows the dielectric is a combination of sapphire and FE or AFE material; (c) shows an alternative control circuit in which all the parts are on one wafer; (d) and (e) show the details of the wafer with control circuits on it.
  • This invention is directed to tunable microwave and millimeter wave devices comprising a radiofrequency circuit and a control circuit having a ferroelectric or antiferroelectric material, a combination thereof, or a combination with a non-ferroelectric material present at the overlap of the electric field of each of said circuits, wherein the dielectric constant of the ferroelectric or antiferroelectric material can be varied by the control circuit.
  • These devices comprise (a) a control circuit with control signal input and (b) a radiofrequency circuit having (i) a substrate of FE, AFE, a combination of FE and AFE, or a combination of FE or AFE and non-ferroelectric materials, (ii) a high temperature superconductor transmission line having input, output, or both input and output, and (iii) a ground means.
  • the control circuit provides an electrical field (E-field) in the FE or AFE material in the HTS microwave and millimeter wave device.
  • a control signal is applied to the control circuit for varying the E-field in the FE or AFE material to change its dielectric constant, which results in a tuning of the property of the microwave and millimeter wave device.
  • the invention includes different types of control circuits such as LC lumpy circuits, single stage stub and radial chokes, and double stage or multi-stage stub and radial chokes.
  • control circuits such as LC lumpy circuits, single stage stub and radial chokes, and double stage or multi-stage stub and radial chokes.
  • the use of these control circuits in different HTS transmission lines is disclosed such as microstrip line, strip line, coplanar line and parallel line, the substrates of which are at least partially comprised of FE or AFE materials, a combination thereof, or a combination of FE or AFE material and non-ferro ⁇ electric material.
  • This invention also comprises integration of the RF circuit, the control circuit and the FE or AFE material to form functional tunable FE or AFE-HTS microwave, millimeter wave circuits.
  • FE or AFE-HTS microwave and millimeter wave devices include a tunable resonator, a tunable delay line/phase shifter and a tunable bandpass filter.
  • This invention further comprises a tunable dielectric resonator comprising: (a) a dielectric element of ferroelectric or antiferroelectric material positioned between two discrete high temperature superconducting films, each said film deposited on a lattice-matched substrate; (b) a control circuit with control signal input for establishing an electric field in the ferroelectric or antiferroelectric material for altering the dielectric constant of the ferroelectric or antiferroelectric material; and (c) a metal outer enclosure having means to hold the resonator components or assembly and means for magnetic dipole coupling to the resonator to provide RF input and output.
  • This invention further comprises a tunable dielectric resonator comprising: (a) an element of sapphire positioned between two discrete high temperature superconducting films, each said film deposited on a lattice-matched substrate; (b) an element of ferroelectric or antiferroelectric material positioned between and in direct contact with the sapphire element and one of said high temperature superconducting films; (c) a control circuit with control signal input for establishing an electric field in the ferroelectric or antiferroelectric material for altering the dielectric constant of the ferroelectric or antiferroelectric material; and (d) an outer enclosure having means for holding the resonator and means for magnetic dipole coupling.
  • the FE or AFE element is sandwiched by and in direct contact with two HTS films.
  • an FE or AFE element is positioned between one HTS film and an element of high purity single crystal sapphire.
  • the FE or AFE element can either be a separate piece or a layer of FE or AFE material epitaxially deposited on one of the HTS films or on the end plate of the sapphire element.
  • HTS - high temperature superconductor FE - ferroelectric, AFE - antiferro ⁇ electric, and RF - radiofrequency. Unless otherwise specified, all temperatures are in degree Kelvin.
  • the present invention provides electronically controllable or tunable microwave or millimeter wave circuits and devices using a combination of HTS and FE or AFE materials .
  • the conductive part of the RF circuit is made of HTS thin films to minimize the RF loss, while the dielectric part or a portion of the dielectric part of the circuit is made of FE or AFE materials for tuning.
  • a control circuit is added to apply an electric field (E-field) for changing the dielectric constant of the FE or AFE material, which effectively tunes the RF circuit.
  • E-field electric field
  • the key to achieve tunable HTS/FE or AFE microwave and millimeter wave circuits is to construct the RF circuit and the control circuit in such a way to achieve maximum tunability and at the some time to maintain optimum RF performance.
  • Each FE and AFE material's dielectric constant can be expressed by a 3x3 tensor:
  • Two categories useful in the present invention of ferroelectric or antiferroelectric materials are those with only diagonal elements and all off-diagonal elements equal to zero, or those with both non-zero diagonal and off-diagonal elements.
  • the off-diagonal elements contribute to the interaction between different components of the electric field (E-field) . Therefore, for the first type FE or AFE materials, the control electric-field provided by the control circuit should be in parallel with the RF electric-field to achieve maximum tunability. On the other hand, for the second type of FE or AFE materials, the control electric-field can be either in parallel or perpendicular to the RF electric field.
  • control circuit should be decoupled from the RF circuit within the operating RF frequency band to avoid an adverse effect on the RF performance.
  • this requirement usually is contrary to the maximum tunability requirement. Certain compromises are necessary for designing these electronically tunable HTS/FE or AFE circuits as detailed hereinafter.
  • ferroelectric materials especially suitable for use in the present invention include LiNb ⁇ 3, LiTa ⁇ 3, or PbTi ⁇ 3.
  • antiferroelectric materials especially suitable for use in the present invention include SrTi ⁇ 3, LaA103, or KMnF3.
  • a combination of ferroelectric and antiferro ⁇ electric materials can be employed.
  • a combination of (i) ferroelectric or antiferroelectric materials or both with (ii) a non-ferroelectric material is also suitable for use herein.
  • Figures 1, 2, and 3 illustrate various types of chokes which can be used in the control circuits of the devices of the present invention to isolate the control circuit from the transmission line. This helps prevent RF signal loss.
  • Figure 1 (a) shows a LC lumpy circuit choke which can be used as a control circuit of FE or AFE-HTS tunable microwave and millimeter wave devices .
  • 1 is the microwave and millimeter wave transmission line in the FE or AFE tunable device. It can be in different forms including: strip line, microstrip line, coplanar line or parallel line.
  • 2 is a lumpy circuit inductor such as an air coil or a ferrite filled coil.
  • 3 is lumpy circuit capacitor.
  • 4 is the ground, which can be on the same level of the RF line on the substrate for coplanar line and parallel line versions or can be through a via hole to the ground plate on the other side of the substrate for strip line and microstrip line versions.
  • 5 is the control sign input port for applying the control signal.
  • Figure 1 (b) shows another LC lumpy circuit choke which can be used for as a control circuit of FE or AFE-HTS tunable microwave and millimeter wave devices.
  • la is the RF transmission line in the FE or AFE tunable device.
  • la can be in different forms including: strip line, microstrip line, coplanar line or parallel line.
  • 2a is a lumpy circuit square spiral (a circular spiral is also possible) inductor made of HTS thin film.
  • 3a is an integrated capacitor
  • 4a is the ground, which can be on the same level of the RF line on the substrate for coplanar line and parallel line versions or can be through a via hole to the ground plate on the other side of the substrate for strip line and microstrip line versions.
  • 5a is the control sign input port for applying the control signal.
  • FIG. 1 shows a single stage ⁇ /4 single stub choke.
  • 11 is the RF transmission line in the FE or AFE tunable device. 11 can be in different forms including: strip line, microstrip line, coplanar line or parallel line.
  • 12 is the lead line for the control signal, which is divided into two ⁇ /4 sections.
  • a ⁇ /4 open end stub 13 is attached at the center of line 12, which serves as a choke.
  • 14 is a capacitor.
  • 15 is the ground, which can be on the same level of the RF line on the substrate for coplanar line and parallel line versions or can be through a via hole to the ground plate on the other side of the substrate for strip line and microstrip line versions.
  • 16 is the input port for control signal.
  • Figure 2 (b) shows a single stage ⁇ /4 double stub choke.
  • the components are the same as those shown in Figure 2 (a) except that there are two ⁇ /4 open end stubs (13a is the additional one), which gives more isolation between the RF transmission line and the control circuit .
  • Figure 2 (c) shows a single stage ⁇ /4 single radial choke.
  • the components are the same as those shown in Figure 2 (a) except that the ⁇ /4 open end stub is replaced by a ⁇ /4 radial choke, 17, which has a broader bandwidth than the ⁇ /4 open end stub.
  • Figure 2 (d) shows a single stage ⁇ /4 double radial choke.
  • the components are the same as those shown in Figure 2 (c) except that there are two ⁇ /4 radial chokes (17a is the additional one), which gives more isolation between the RF transmission line and the control circuit .
  • Figures 3 (a) , (b) , (c) and (d) show different types of 2-stage ⁇ /4 chokes.
  • Figure 3 (a) shows a 2-stage ⁇ /4 single stub choke.
  • Figure 2 (b) shows a 2-stage ⁇ /4 double stub choke.
  • Figure 2 (c) shows a 2-stage ⁇ /4 single radial choke.
  • Figure 2 (d) shows a 2-stage ⁇ /4 double radial choke.
  • Figures 3 (a) , (b) , (c) , (d) are the same as Figures 2 (a) , (b) , (c) , (d) , respectively, except that one more stage is added for each configuration.
  • the distance between two chokes is also ⁇ /4.
  • the adding of the second stage provides more isolation between the RF transmission line and the control circuit.
  • Figures 4 through 9 illustrate specific configurations for simple devices of the present invention.
  • Figures 4 and 5 show two configurations of FE or
  • the control signal is fed into the HTS center line 31 via the choke 34 from the input port 35.
  • the choke 34 can be any configuration described in Figure 1, Figure 2, and
  • FIG. 3 The ground 39 is connected to one HTS ground plate 33 of the coplanar line.
  • the other HTS ground plate 33a is connected to 33 via an air bridge 36.
  • Another air bridge 37 is used for connecting the right side HTS ground plate 33b to 33.
  • the cross section views of Figures 4 (b) , (c) and (d) show three different ways to integrate the FE or AFE material into the coplanar line RF circuit.
  • the entire substrate 32 is made of FE or AFE material which also serves as the dielectric medium for the coplanar line.
  • the control signal's voltage applied to the center line 31 provides a strong E-field underneath the center line and the gaps between the line 31 and the two ground plates (33, 33a or 33b) , which increases the sensitivity of the tuning.
  • the FE or AFE material 32a is a layer between the non-FE or AFE substrate 38 and the HTS films which make up the coplanar line. In this configuration, the tuning sensitivity may be reduced. However, it has the advantage of less RF loss due to the low RF loss of a non-FE or AFE substrate, such as MgO.
  • the FE or AFE material 32b is a thin layer filling the gaps between the center line and the two ground plates .
  • the substrate 38 is a non-FE or AFE material.
  • the tuning sensitivity is further reduced in trade for lower RF loss due to the fact that very little FE or AFE material is used.
  • the non-FE or AFE substrate 38, the FE or AFE material 32 and the HTS films must be lattice matched to within less than 3%, otherwise the performance of the device will suffer.
  • FIGS 5 (a) - 5 (d) show another configuration of FE or AFE tunable HTS microwave and millimeter wave devices of the present invention in coplanar line form.
  • the control signal input port 35 is connected to one ground plate 33a.
  • the ground 39 for return is connected to the other ground plate 33. Therefore, the two ground plates 33 and 33a are at different electrical potentials for the control signal.
  • the two ground plate 33 and 33a must be at the same electrical potential to avoid the harmful odd mode.
  • the solution is to add an air bridge 36 with one end directly attached to one ground plate 33 and the other end via a capacitor 40 to the other ground plate 33a.
  • the capacitor 40 serves as a short circuit for the RF frequency.
  • Figures 5 (b) , 5 (c) and 5 (d) show three different ways to implement the FE or AFE material 32, 32a, or 33b into the coplanar line, which are the same as described in the previous paragraph for Figures 4 (a) -(d) .
  • Figures 6, 7 and 8 show three configurations of FE or AFE tunable HTS microwave and millimeter wave devices in microstrip line form.
  • the control signal is applied to the HTS microstrip line 41 via a choke 42 from the control input port 43.
  • the choke 42 can be any configuration described in Figure 1, Figure 2, and Figure 3.
  • the cross section views Figure 6 (b) and 6 (c) show two different ways to implement the FE or AFE material into the microstrip line circuit.
  • the cross section view Figure 6 (b) shows that the entire substrate 44 between the line 41 and the HTS ground plate 45 is made of FE or AFE material.
  • the substrate consists of two layers: One is a non-FE or AFE dielectric 47 such as MgO; the other is a FE or AFE material 44a.
  • a control voltage is applied to the line 41, an E-field is established in the substrate between the line 41 and the ground plate 45.
  • the dielectric constant of the FE or AFE material is changed to tune the RF circuit.
  • the tuning sensitivity is high due to the fact that the entire substrate is made of FE or AFE material.
  • the version of Figure 6 (c) has less tuning sensitivity due to less FE or AFE material in the substrate.
  • FIG 7 (a) shows another configuration of the FE or AFE-HTS microwave and millimeter wave circuit.
  • the microstrip line consists of the HTS line 41, grounded by HTS ground plate 45 as shown in Figures 7 (b) and 7 (c) .
  • the substrate cross section views are shown in Figures 7 (b) and 7 (c) .
  • the entire substrate 44 is made of FE or AFE material.
  • the substrate has two layers: one layer, 47, is made of non-FE or AFE dielectric material such as MgO; the other layer, 44a is made of FE or AFE material.
  • the device includes a pair of conductive bars, 48 and 48a, the input port 43 and the return ground 49. When a control signal is applied to 43, an E-field is established between the two bars, which covers the area underneath the line 41 and the gaps between the line 41 and the bars, 48 and 48a. By varying the control voltage, the dielectric constant of the FE or AFE material is changed, which tunes the RF circuit.
  • the isolation between the RF circuit and the control circuit is adequate.
  • Figure 8 (a) shows yet another configuration of the FE or AFE-HTS microwave and millimeter wave circuits.
  • FIGS 8 (b) and 8 (c) The cross section views are shown in Figures 8 (b) and 8 (c) .
  • the entire substrate is made of FE or AFE material.
  • the substrate has two layers: one layer, 47, is made of non-FE or AFE dielectric material such as MgO; the other layer, 44a, is made of FE or AFE material.
  • the control signal input port 43 is connected to a conductive plate, 45a, placed above the line, 41, and supported by a superstrate 47a. If the superstrate 47a has a low dielectric constant and its thickness is sufficiently large, then the adding of such a control circuit will not strongly affect the RF line.
  • Figures 9 (a) and (b) show two configurations for tuning the FE or AFE-HTS microwave and millimeter wave devices in parallel line form.
  • the HTS parallel lines, 51 and 51a are on the same side of the substrate.
  • Three different cross section views are shown in Figures 9 (c) , 9 (d) , and 9 (e) .
  • the entire substrate is made of FE or AFE material, 52.
  • the substrate has two layers.
  • One layer, 53 is made of non-FE or AFE dielectric such as MgO.
  • the other layer, 52a is made of FE or AFE material.
  • the entire substrate, 53 is made of non-FE or AFE material such as MgO.
  • the FE or AFE material 52b is deposited on the substrate 53 only at the gap between the two HTS parallel lines, 51 and 51a.
  • the HTS parallel lines, 51 and 51a are deposited on the opposite sides of the substrate 52, which is made of FE or AFE material.
  • the substrate also can be made of layered FE or AFE material and non-FE or AFE material such as shown in Figures 9 (a) and 9 (d) .
  • the control signal is applied to one parallel line, 51, via a choke 54 from the input port 55.
  • the choke 54 can be in any configuration described in Figure 1, Figure 2, and Figure 3.
  • the tuning is by applying a control voltage to the port 55 to change the dielectric constant of the FE or AFE material.
  • Figures 10 (a) and 10 (b) show an example of a FE or AFE tunable HTS resonator.
  • the resonator is in a ⁇ /2 coplanar line form.
  • the resonator 61 is a section of coplanar line coupled to the input line 62 and the output line 62a via capacitive gaps, 70 and 70a.
  • the coplanar line ground plate is divided into three parts: 63, 63a and 63b.
  • air bridges 66, 66a, and 66b are used to link them together.
  • a "drop-in" type of LC lumpy circuit choke is used as the control circuit, which includes a lumpy inductor 64, a lumpy capacitor 65 and the control port 69.
  • the control circuit is not necessarily limited to this particular form. Any configuration described in Figure 1, Figure 2 and Figure 3 can be used for replacement.
  • the substrate in this particular case is a layered one including a FE or AFE layer 67 and a non-FE or AFE layer 68 as shown in Figure 10.
  • the resonant frequency of the resonator can be tuned by varying the control voltage. Since the choke is designed in such a way that it provides a high impedance for the frequency at the middle of the resonator, the choke does not disturb the resonator.
  • the resonator circuit is made of HTS material, the Q-value is very high. Such high Q-value FE or AFE-HTS resonator can be used as the frequency determining element for an electronically tunable low phase noise microwave oscillator.
  • FIGs 11 (a) and (b) show an example of a FE or AFE tunable HTS delay line/phase shifter in microstrip line form.
  • the microstrip line 71 is made of HTS thin film deposited on a FE or AFE substrate 74.
  • the ground plate 75 is also made of HTS thin film deposited on the other side of the substrate 74.
  • the control circuit is a 2-stage double radial choke with a capacitor 73 to the ground and an input port 76 for the control signal.
  • the control circuit is not necessarily limited to this particular form. Any configuration described in Figure 1, Figure 2 and Figure 3 can be used.
  • FIG 12 shows an example of a FE or AFE tunable HTS bandpass filter in microstrip line form.
  • the bandpass filter 81 is made of HTS thin film deposited on a layered substrate including a FE or AFE layer 82 and a non-FE or AFE layer 83.
  • the ground plate 84 is also made of HTS thin film deposited on the other side of the substrate.
  • the filter 81 is in a ⁇ /2 parallel coupled line form, which includes a serious of resonators, 88, with a length of ⁇ /2 at resonance.
  • the filter is coupled to the input line 89 and the output line 89a via a capacitive coupling gap.
  • the control voltage is applied to a control conductive plate 85 supported by a low dielectric constant superstrate (dose not shown in the figure) .
  • a control voltage is applied to 85 via port 86, an E-field is established in the space between the plates 85 and 84, which includes the FE or AFE layer 82.
  • the dielectric constant of the FE or AFE substrate 82 is changed accordingly, which tunes the center frequency of the bandpass filter 81.
  • the advantage of this configuration is that the control circuit does not disturb the RF circuit, so the filter can maintain a very high performance.
  • the disadvantage of this configuration is that the tuning sensitivity is very low, so the tuning is very slight.
  • Figure 13 (a) , (b) , (c) , (d) and (e) show examples of a FE or AFE tunable high Q-value HTS-dielectric-HTS resonator.
  • a FE or AFE tunable HTS-dielectric-HTS resonator In order to make the resonator electrically tunable without lowering its Q-value, low loss FE or AFE material must be introduced into the resonator and a control E-field must be established in the FE or AFE material.
  • Figure 13 (a) shows one example of the FE or AFE tunable HTS-dielectric-HTS resonator.
  • the dielectric is a FE or AFE rod 90, which is sandwiched by a pair of HTS films 91 deposited on substrate 92.
  • the RF energy is coupled in and out by a pair of coaxial cables with a loop at the tip.
  • the resonator is put in a copper case 94 with springs and spacer to hold it.
  • the control circuit consists of a HTS-metal interface 95 with a via hole to the back side of the top substrate 92, bonding wire 96, control port 97, another HTS-metal interface 95a with a via hole on the bottom substrate to the case as a ground.
  • the dielectric constant of the FE or AFE rod can be changed by varying the control voltage, which causes the the resonant frequency to change.
  • the advantage of this configuration is that the tuning sensitivity is very high because the entire dielectric rod is made of FE or AFE material. But the disadvantage is that the Q-value of the resonator is limited by the loss factor of the FE or AFE material.
  • the Q-value can be increased by introducing less FE or AFE material in the resonator.
  • the dielectric rod 98 is made of high purity single crystal sapphire, which has an extremely high Q-value.
  • a FE or AFE disk 90a is inserted between the sapphire rod 98 and the top HTS film 91a.
  • the FE or AFE disk 90a can either be a separate piece or a layer of FE or AFE material epitaxially deposited on the surface of the HTS film 91a. All the remaining components in Figure 13(b) are the same as those in Figure 13 (a) .
  • the tuning mechanism of this configuration is the same as that for the configuration shown in Figure 13(a) .
  • the sapphire rod 98 is the same as that shown in Figure 13 (b) .
  • the FE or AFE disk 90a is also similar to that in Figure 13 (b) except that this one has a smaller diameter.
  • the FE or AFE disk 90a can be either a separate piece or a layer of FE or AFE material epitaxially deposited on the HTS film 91a or on the sapphire rod 98. The difference is in the control circuit.
  • FIG. 13 (d) , (e) show the details.
  • the HTS-metal interface 95 is connected to the control port 97 for applying the control voltage.
  • the HTS-metal interface 95b is connected to the ground through the via hole.
  • a ring shape gap or groove 99 is etched away from the HTS film 91a.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

L'invention concerne un dispositif à ondes millimétriques ou hyperfréquence accordable comprenant un circuit radioélectrique et un circuit de commande, ces dispositifs possédant soit un matériau ferroélectrique, soit un matériau anti-ferroélectrique présent au niveau du chevauchement du champ électrique de chacun des circuits radioélectriques et de commande. La constante diélectrique du matériau ferroélectrique ou anti-ferroélectrique peut être modifiée par le circuit de commande pour accorder le dispositif.
PCT/US1994/005656 1993-05-27 1994-05-19 Circuits hyperfrequence accordables supraconducteurs/ferroelectriques a coefficient de temperature eleve WO1994028592A1 (fr)

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WO1996042118A1 (fr) * 1995-06-13 1996-12-27 Telefonaktiebolaget Lm Ericsson Dispositifs hyperfrequence accordables
WO1996042117A1 (fr) * 1995-06-13 1996-12-27 Telefonaktiebolaget Lm Ericsson Agencement et procede concernant des dispositifs accordables
US5635730A (en) * 1995-03-22 1997-06-03 Advanced Mobile Telecommunication Technology Inc. Superconducting oxide thin film device
DE19620932C1 (de) * 1996-05-24 1997-08-21 Bosch Gmbh Robert Planarer Filter mit ferroelektrischen und/oder antiferroelektrischen Elementen
EP0793288A3 (fr) * 1996-03-01 1998-07-15 Murata Manufacturing Co., Ltd. Appareil à filtre passe-bande en guide d'onde diélectrique non-radiative intégré
FR2765402A1 (fr) * 1997-06-27 1998-12-31 Henri Havot Filtre a court-circuit variable
US5912472A (en) * 1996-05-15 1999-06-15 Robert Bosch GmbH Switchable planar high frequency resonator and filter
WO2000024080A1 (fr) * 1998-10-16 2000-04-27 Paratek Microwave, Inc. Materiaux dielectriques stratifies accordables en tension pour applications au micro-ondes
WO2003028146A1 (fr) * 2001-09-27 2003-04-03 Qualcomm Incorporated Filtres passe-bande syntonisables par voie electrique
WO2003088411A1 (fr) 2002-04-10 2003-10-23 South Bank University Enterprises Ltd Resonateur dielectrique accordable
EP1600748A1 (fr) * 2004-05-26 2005-11-30 Krohne S.A. dispositif de mesure de niveau par radar
CN100392910C (zh) * 2005-11-25 2008-06-04 中国科学院物理研究所 一种铁电薄膜可调带通滤波器
EP2071660A1 (fr) 2007-12-11 2009-06-17 Telegärtner Karl Gärtner Gmbh Filtre passe-haut
WO2020078777A1 (fr) * 2018-10-15 2020-04-23 International Business Machines Corporation Dispositifs supraconducteurs destinés à commander des courants continus et des signaux hyperfréquence
US10804874B2 (en) 2018-06-12 2020-10-13 International Business Machines Corporation Superconducting combiner or separator of DC-currents and microwave signals
WO2023111379A1 (fr) * 2021-12-15 2023-06-22 Iqm Finland Oy Ligne de transmission dans un circuit supraconducteur

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Cited By (30)

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Publication number Priority date Publication date Assignee Title
US5635730A (en) * 1995-03-22 1997-06-03 Advanced Mobile Telecommunication Technology Inc. Superconducting oxide thin film device
US6187717B1 (en) 1995-06-13 2001-02-13 Telefonaktiebolaget Lm Ericsson Arrangement and method relating to tunable devices through the controlling of plasma surface waves
WO1996042117A1 (fr) * 1995-06-13 1996-12-27 Telefonaktiebolaget Lm Ericsson Agencement et procede concernant des dispositifs accordables
WO1996042118A1 (fr) * 1995-06-13 1996-12-27 Telefonaktiebolaget Lm Ericsson Dispositifs hyperfrequence accordables
US6463308B1 (en) 1995-06-13 2002-10-08 Telefonaktiebolaget Lm Ericsson (Publ) Tunable high Tc superconductive microwave devices
EP0793288A3 (fr) * 1996-03-01 1998-07-15 Murata Manufacturing Co., Ltd. Appareil à filtre passe-bande en guide d'onde diélectrique non-radiative intégré
US6011983A (en) * 1996-03-01 2000-01-04 Murata Manufacturing Co., Ltd. Band-pass filter apparatus using superconducting integrated nonradiative dielectric waveguide
US5912472A (en) * 1996-05-15 1999-06-15 Robert Bosch GmbH Switchable planar high frequency resonator and filter
DE19620932C1 (de) * 1996-05-24 1997-08-21 Bosch Gmbh Robert Planarer Filter mit ferroelektrischen und/oder antiferroelektrischen Elementen
US6049726A (en) * 1996-05-24 2000-04-11 Robert Bosch Gmbh Planar filter with ferroelectric and/or antiferroelectric elements
FR2765402A1 (fr) * 1997-06-27 1998-12-31 Henri Havot Filtre a court-circuit variable
WO2000024080A1 (fr) * 1998-10-16 2000-04-27 Paratek Microwave, Inc. Materiaux dielectriques stratifies accordables en tension pour applications au micro-ondes
US6377142B1 (en) 1998-10-16 2002-04-23 Paratek Microwave, Inc. Voltage tunable laminated dielectric materials for microwave applications
EP2309586A1 (fr) * 2001-09-27 2011-04-13 Qualcomm Incorporated Filtres passe-bande syntonisables par voie électronique
WO2003028146A1 (fr) * 2001-09-27 2003-04-03 Qualcomm Incorporated Filtres passe-bande syntonisables par voie electrique
KR101036117B1 (ko) * 2001-09-27 2011-05-23 퀄컴 인코포레이티드 전기적으로 튜닝가능한 대역통과필터
EP2164129A1 (fr) * 2001-09-27 2010-03-17 Qualcom Incorporated Filtres passe-bande syntonisables par voie électronique
US7119641B2 (en) 2002-04-10 2006-10-10 Southbank University Enterprises, Ltd Tuneable dielectric resonator
WO2003088411A1 (fr) 2002-04-10 2003-10-23 South Bank University Enterprises Ltd Resonateur dielectrique accordable
EP1600748A1 (fr) * 2004-05-26 2005-11-30 Krohne S.A. dispositif de mesure de niveau par radar
US7227495B2 (en) 2004-05-26 2007-06-05 Krohne S.A. Radar fill-level sensing device
CN100392910C (zh) * 2005-11-25 2008-06-04 中国科学院物理研究所 一种铁电薄膜可调带通滤波器
EP2071660A1 (fr) 2007-12-11 2009-06-17 Telegärtner Karl Gärtner Gmbh Filtre passe-haut
US7952451B2 (en) 2007-12-11 2011-05-31 Telegaertner Karl Gaertner Gmbh High-pass filter
US10804874B2 (en) 2018-06-12 2020-10-13 International Business Machines Corporation Superconducting combiner or separator of DC-currents and microwave signals
WO2020078777A1 (fr) * 2018-10-15 2020-04-23 International Business Machines Corporation Dispositifs supraconducteurs destinés à commander des courants continus et des signaux hyperfréquence
CN112868135A (zh) * 2018-10-15 2021-05-28 国际商业机器公司 用于控制直流和微波信号的超导器件
JP2022511376A (ja) * 2018-10-15 2022-01-31 インターナショナル・ビジネス・マシーンズ・コーポレーション 直流およびマイクロ波信号を制御するための超電導デバイス
US11317519B2 (en) 2018-10-15 2022-04-26 International Business Machines Corporation Fabrication of superconducting devices that control direct currents and microwave signals
WO2023111379A1 (fr) * 2021-12-15 2023-06-22 Iqm Finland Oy Ligne de transmission dans un circuit supraconducteur

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