WO1993004345A1 - Detector for infrared radiation - Google Patents

Detector for infrared radiation Download PDF

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Publication number
WO1993004345A1
WO1993004345A1 PCT/GB1992/001550 GB9201550W WO9304345A1 WO 1993004345 A1 WO1993004345 A1 WO 1993004345A1 GB 9201550 W GB9201550 W GB 9201550W WO 9304345 A1 WO9304345 A1 WO 9304345A1
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WO
WIPO (PCT)
Prior art keywords
radiation
sensitive devices
sensitive
detector
radiation detector
Prior art date
Application number
PCT/GB1992/001550
Other languages
French (fr)
Inventor
Nigel Paul Fox
Original Assignee
Graseby Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Graseby Plc filed Critical Graseby Plc
Priority to GB9402297A priority Critical patent/GB2273771B/en
Publication of WO1993004345A1 publication Critical patent/WO1993004345A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid

Definitions

  • This invention relates to a radiation detector and, more especially, this invention relates to a radiation detector for detecting infrared radiation.
  • Radiation detectors for detecting visible radiation such for example as laser beams are known.
  • the first known type of radiation detector is referred to as an absolute measuring device or a primary measuring device. This is because the radiant flux of a light beam and the indicated measurement is based on fixed physical constants.
  • the other known type of radiation detector is referred to as a secondary measuring device because measurements are related to the radiant flux of the light beam by empirical data and they must be calculated.
  • Absolute measuring devices for measuring visible radiation are generally complicated and expensive.
  • the development of radiation-sensitive devices in the form of inversion layer photodiodes resulted in the production of absolute measuring radiation detectors which are less complicated and less expensive than those detectors previously available.
  • the known radiation detectors using inversion layer photodiodes are described in USA Patent No. 4498012.
  • the known radiation detectors operate in the visible spectrum so that, for example, in the case of the radiation detector disclosed in USA Patent No.4498012, the radiation detector only works correctly from approximately 400 nm to 700 nm.
  • the radiation detector of the USA Patent requires a bias voltage to function correctly.
  • the present invention has sought to provide a radiation detector which can be used for detecting infrared radiation.
  • the provision of such a radiation detector has required the production of radiation-sensitive devices which are novel and which have never previously been used in radiation detectors.
  • this invention provides a radiation detector for detecting infrared radiation, which radiation detector comprises:
  • At least two radiation-sensitive devices which produce electrical signals responsive to impinging radiation, and which are positioned inside the enclosure such that (a) the radiation beam can impinge upon a first one of the radiation-sensitive devices and be partially absorbed by that radiation-sensitive device, (b) any non-absorbed radiation is reflected from the first radiation-sensitive device to the next radiation sensitive device, and (c) the non-absorbed radiation from the last radiation-sensitive device is reflected back over the same path towards the first one of the radiation-sensitive devices; and (iii) an output means for providing external access to an electrical signal produced by the radiation- sensitive devices; and the radiation detector being such that the radiation-sensitive devices are indium/gallium/arsenide radiation-sensitive devices which enable the radiation detector to detect infrared radiation in the wavelength region of 980-1640 nm.
  • the radiation detector of the present invention is able to work in a previously unobtainable wavelength region due to the use of the indium/gallium/arsenide radiation-sensitive devices.
  • the radiation detector does not require bias voltages in order to operate although bias voltages may be employed and may be found to be effective to improve response speed in a few applications. For the majority of applications, bias voltages will not be required and will not give an advantage.
  • the indium/gallium/arsenide radiation- sensitive devices are made of an alloy of indium, gallium and arsenic and they are commonly known as indium/gallium/ arsenide radiation-sensitive devices.
  • the indium/gallium/arsenide radiation-sensitive devices are indium/gallium/arsenide photodiodes.
  • the indium/gallium/ arsenide photodiodes are currently obtainable from Laser Monitoring Systems Limited of Hull, United Kingdom.
  • the radiation detector of the present invention may employ two of the radiation-sensitive devices. Alternatively, the radiation detector may employ three of the radiation-sensitive devices. More than three of the radiation-sensitive devices may be employed if desired.
  • the radiation detector may be one which includes trans-impedance amplifier means, and in which the outputs of the radiation-sensitive devices are connected to the trans-impedance amplifier means.
  • the trans-impedance amplifier means may be employed for convenience in order to convert the output current into a more easily measured voltage.
  • the enclosure is preferably one having a black inside surface.
  • the present invention also extends to fibre- optic apparatus when provided with the radiation detector.
  • the present invention still further provides telecommunications apparatus when provided with the fibre- optic apparatus.
  • the radiation-sensitive devices used in the present invention are preferably designed to be large area devices and they have a high near unity internal quantum efficiency over the operating wavelengths of 980-164 ⁇ nm range. This high near unity internal quantum efficiency may be as much as 100.0%.
  • the radiation detector Because the un-absorbed radiation from the last radiation-sensitive device is reflected back over the same path towards the first one of the radiation-sensitive devices, before exiting the enclosure, the radiation detector has a very high external quantum efficiency. This is achieved because any losses due to reflection are very small, or are greatly reduced. Because of the high internal and external quantum efficiency values, the radiation detector of the present invention may be produced to have the following characteristics.
  • the radiation detector can be used within optical systems which would otherwise be sensitive to back reflections from the radiation detector so that, for example, the radiation detector can be used within fibre optic systems where the fibre optic output would be very near the radiation detector.
  • the radiation detector becomes so-called "quantum flat” so that the response of the radiation detector can be calculated for any known wavelength over the specified range, without the need for any calibration as th spectralresponsivity is directly proportional to wavelength. This makes the calibration of power meters very simple andimproves their accuracy, especially over the important fibre optic wavelengths.
  • the radiation detector may have a predictable spectral responsivity, thereby allowing it to be used as the basis of power meters without calibration to accuracies greater than currently achievable by current calibrations. 5.
  • the radiation detector may be calibrated to a higher accuracy than current detectors, thus allowing it to improve the accuracy of optical power measurements in the appropriate region by a factor of ten. ⁇ .
  • the radiation detector can measure open collimated beams of radiation from lasers or monochromators, but can also be fitted with an attachment to take fibre optic connectors to measure the power of radiation from fibre optic systems as well.
  • the output means of the radiation detector may be any suitable and appropriate device for providing external access to the electrical signal produced by the radiation-sensitive devices.
  • the output means may be a trans-impedance amplifier.
  • Figure 1 illustrates a first radiation detector for detecting infrared radiation
  • Figure 2 illustrates a second radiation detector for detecting infrared radiation
  • Figure 3 shows in more detail the actual construction of the radiation detector shown in Figure 2.
  • the radiation detector 2 for detecting infrared radiation.
  • the radiation detector 2 comprises an enclosure 4 having means including an aperture 6 through which a radiation beam can enter the enclosure 4.
  • the aperture 6 may be defined by a fibre optic connector 8 or by any other suitable and appropriate device.
  • the enclosure 4 is provided with two radiation-sensitive devices 10, 12 as shown.
  • the two devices 10, 12 make an angle of 45° as shown.
  • the device 10 is provided with electrical connections 14, 16, and the device 12 is provided with electrical connections 18, 20.
  • the electrical connections 14, l ⁇ , 18, 20 are connected together as shown and they leave the enclosure 4 via output means 22.
  • the output means 22 provides external access to electrical signals produced by the devices 10, 12, and passing along the connections 14, I ⁇ , 18, 20.
  • a trans-impedance amplifier 23 is shown connected to the output means 22.
  • FIGs 2 and 3 there is shown a second radiation detector 2. For ease of comparison and understanding, similar parts as in Figure 1 have been given the same reference numerals. In Figure 2, it will be seen that three radiation- sensitive devices 24, 26, 28 are employed. These devices 24, 26, 28 are shown connected by electrical connections 30, 32, 34. These electrical connections 30, 32, 34 receive the output from the devices 24, 26, 28.
  • the electrical connections 30, 32, 34 are linked in parallel at position 36 and a trans-impedance amplifier (not shown) may be connected to the linked electrical connections if desired.
  • the trans-impedance amplifier may be connected to the linked electrical connections 30, 32, 34 either internally or externally of the enclosure 4.
  • Figure 2 shows the inward and outward path of an infrared radiation beam 38.
  • Figure 3 shows the precise positioning of the devices 24, 26, 28 and it will thus be appreciated that these devices are in different planes.
  • the devices 10, 12 shown in Figure 1 are in different planes.
  • the radiation detectors 2 shown in the drawings are such that the devices 10, 12 and 24, 26, 28 are arranged within a package so that the reflection from the first device impinges on the subsequent device or devices and is then reflected back before leaving the package.
  • the devices 10, 12 and 24, 26, 28 are indium/gallium/arsenide photodiodes. These photodiodes are planar diffused-type photovoltaic detectors and they require no bias voltages to operate. Biases can be applied to improve response speed although, for most applications, this may not be necessary.
  • connection of the parallel outputs to a trans-impedance amplifier is for convenience in order to convert the output current to a more easily measured voltage. It is to be appreciated that the embodiments of the invention described above with reference to the accompanying drawings have been given by way of example only and that modifications may be effected. Thus, for example, indium/gallium/arsenide radiation-sensitive devices other than the specified photodiodes may be employed, these other radiation-sensitive devices having different spectral responsivities and spectral ranges in the infra red.
  • the radiation detectors 2 operate in the wavelength region of 980-1640nm, the radiation detectors 2 may operate down to around 500 nm and up to approximately 1750 nm but this occurs with progressively poorer performance and the radiation detectors 2 need to be calibrated outside the above specified operating wavelength region of 980-164 ⁇ nm.
  • the radiation detectors of the resent invention may be used for fibre optic applications for telecommunications systems, and they may also be used for any other suitable and appropriate applications.

Abstract

A radiation detector (2) for detecting infrared radiation, which radiation detector (2) comprises: (i) an enclosure (4) having means (6) through which a radiation beam can enter the enclosure (4); (ii) at least two radiation-sensitive devices (10, 12) which produce electrical signals responsive to impinging radiation, and which are positioned inside the enclosure (4) such that (a) the radiation beam can impinge upon a first one of the radiation-sensitive devices (10, 12) and be partially absorbed by that radiation sensitive device, (b) any non-absorbed radiation is reflected from the first radiation-sensitive device to the next radiation sensitive device, and (c) the non-absorbed radiation from the last radiation-sensitive device is reflected back over the same path towards the first one of the radiation-sensitive devices; and (iii) an output means (22) for providing external access to an electrical signal produced by the radiation-sensitive devices (10, 12); and the radiation detector (2) being such that the radiation-sensitive devices (10, 12) are indium/gallium/arsenide radiation-sensitive devices which enable the radiation detector (2) to detect infrared radiation in the wavelength region of 980-1640 nm.

Description

DETECTOR FOR INFRARED RADIATION
This invention relates to a radiation detector and, more especially, this invention relates to a radiation detector for detecting infrared radiation. Radiation detectors for detecting visible radiation such for example as laser beams are known.
There are two types of such known radiation detectors. The first known type of radiation detector is referred to as an absolute measuring device or a primary measuring device. This is because the radiant flux of a light beam and the indicated measurement is based on fixed physical constants. The other known type of radiation detector is referred to as a secondary measuring device because measurements are related to the radiant flux of the light beam by empirical data and they must be calculated.
Absolute measuring devices for measuring visible radiation are generally complicated and expensive. The development of radiation-sensitive devices in the form of inversion layer photodiodes resulted in the production of absolute measuring radiation detectors which are less complicated and less expensive than those detectors previously available. The known radiation detectors using inversion layer photodiodes are described in USA Patent No. 4498012. The known radiation detectors operate in the visible spectrum so that, for example, in the case of the radiation detector disclosed in USA Patent No.4498012, the radiation detector only works correctly from approximately 400 nm to 700 nm. Furthermore, the radiation detector of the USA Patent requires a bias voltage to function correctly.
The present invention has sought to provide a radiation detector which can be used for detecting infrared radiation. The provision of such a radiation detector has required the production of radiation-sensitive devices which are novel and which have never previously been used in radiation detectors.
Accordingly, this invention provides a radiation detector for detecting infrared radiation, which radiation detector comprises:
(i) an enclosure having means through which a radiation beam can enter the enclosure;
(ii) at least two radiation-sensitive devices which produce electrical signals responsive to impinging radiation, and which are positioned inside the enclosure such that (a) the radiation beam can impinge upon a first one of the radiation-sensitive devices and be partially absorbed by that radiation-sensitive device, (b) any non-absorbed radiation is reflected from the first radiation-sensitive device to the next radiation sensitive device, and (c) the non-absorbed radiation from the last radiation-sensitive device is reflected back over the same path towards the first one of the radiation-sensitive devices; and (iii) an output means for providing external access to an electrical signal produced by the radiation- sensitive devices; and the radiation detector being such that the radiation-sensitive devices are indium/gallium/arsenide radiation-sensitive devices which enable the radiation detector to detect infrared radiation in the wavelength region of 980-1640 nm.
The radiation detector of the present invention is able to work in a previously unobtainable wavelength region due to the use of the indium/gallium/arsenide radiation-sensitive devices. The radiation detector does not require bias voltages in order to operate although bias voltages may be employed and may be found to be effective to improve response speed in a few applications. For the majority of applications, bias voltages will not be required and will not give an advantage.
The indium/gallium/arsenide radiation- sensitive devices are made of an alloy of indium, gallium and arsenic and they are commonly known as indium/gallium/ arsenide radiation-sensitive devices. Preferably, the indium/gallium/arsenide radiation-sensitive devices are indium/gallium/arsenide photodiodes. The indium/gallium/ arsenide photodiodes are currently obtainable from Laser Monitoring Systems Limited of Hull, United Kingdom. The radiation detector of the present invention may employ two of the radiation-sensitive devices. Alternatively, the radiation detector may employ three of the radiation-sensitive devices. More than three of the radiation-sensitive devices may be employed if desired. The radiation detector may be one which includes trans-impedance amplifier means, and in which the outputs of the radiation-sensitive devices are connected to the trans-impedance amplifier means. The trans-impedance amplifier means may be employed for convenience in order to convert the output current into a more easily measured voltage.
The enclosure is preferably one having a black inside surface.
The present invention also extends to fibre- optic apparatus when provided with the radiation detector.
The present invention still further provides telecommunications apparatus when provided with the fibre- optic apparatus.
The radiation-sensitive devices used in the present invention are preferably designed to be large area devices and they have a high near unity internal quantum efficiency over the operating wavelengths of 980-164θnm range. This high near unity internal quantum efficiency may be as much as 100.0%.
Because the un-absorbed radiation from the last radiation-sensitive device is reflected back over the same path towards the first one of the radiation- sensitive devices, before exiting the enclosure, the radiation detector has a very high external quantum efficiency. This is achieved because any losses due to reflection are very small, or are greatly reduced. Because of the high internal and external quantum efficiency values, the radiation detector of the present invention may be produced to have the following characteristics.
1. Any non-uniformities in any anti-refleeting coating employed on the individual radiation detectors no longer affect the uniformity of response of the entire radiation detector.
2. The radiation detector can be used within optical systems which would otherwise be sensitive to back reflections from the radiation detector so that, for example, the radiation detector can be used within fibre optic systems where the fibre optic output would be very near the radiation detector.
3. The radiation detector becomes so-called "quantum flat" so that the response of the radiation detector can be calculated for any known wavelength over the specified range, without the need for any calibration as th spectralresponsivity is directly proportional to wavelength. This makes the calibration of power meters very simple andimproves their accuracy, especially over the important fibre optic wavelengths.
4. The radiation detector may have a predictable spectral responsivity, thereby allowing it to be used as the basis of power meters without calibration to accuracies greater than currently achievable by current calibrations. 5. The radiation detector may be calibrated to a higher accuracy than current detectors, thus allowing it to improve the accuracy of optical power measurements in the appropriate region by a factor of ten. β. The radiation detector can measure open collimated beams of radiation from lasers or monochromators, but can also be fitted with an attachment to take fibre optic connectors to measure the power of radiation from fibre optic systems as well.
The output means of the radiation detector may be any suitable and appropriate device for providing external access to the electrical signal produced by the radiation-sensitive devices. Thus, for example, the output means may be a trans-impedance amplifier.
Embodiments of the invention will now be described solely by way of example and with reference to the accompanying drawings in which: Figure 1 illustrates a first radiation detector for detecting infrared radiation;
Figure 2 illustrates a second radiation detector for detecting infrared radiation; and Figure 3 shows in more detail the actual construction of the radiation detector shown in Figure 2.
Referring to Figure 1, there is shown a radiation detector 2 for detecting infrared radiation. The radiation detector 2 comprises an enclosure 4 having means including an aperture 6 through which a radiation beam can enter the enclosure 4. The aperture 6 may be defined by a fibre optic connector 8 or by any other suitable and appropriate device.
The enclosure 4 is provided with two radiation- sensitive devices 10, 12 as shown. The two devices 10, 12 make an angle of 45° as shown.
The device 10 is provided with electrical connections 14, 16, and the device 12 is provided with electrical connections 18, 20. The electrical connections 14, lβ, 18, 20 are connected together as shown and they leave the enclosure 4 via output means 22. The output means 22 provides external access to electrical signals produced by the devices 10, 12, and passing along the connections 14, Iβ, 18, 20. A trans-impedance amplifier 23 is shown connected to the output means 22. Referring now tc Figures 2 and 3, there is shown a second radiation detector 2. For ease of comparison and understanding, similar parts as in Figure 1 have been given the same reference numerals. In Figure 2, it will be seen that three radiation- sensitive devices 24, 26, 28 are employed. These devices 24, 26, 28 are shown connected by electrical connections 30, 32, 34. These electrical connections 30, 32, 34 receive the output from the devices 24, 26, 28. The electrical connections 30, 32, 34 are linked in parallel at position 36 and a trans-impedance amplifier (not shown) may be connected to the linked electrical connections if desired. The trans-impedance amplifier may be connected to the linked electrical connections 30, 32, 34 either internally or externally of the enclosure 4. Figure 2 shows the inward and outward path of an infrared radiation beam 38.
Figure 3 shows the precise positioning of the devices 24, 26, 28 and it will thus be appreciated that these devices are in different planes. Similarly, the devices 10, 12 shown in Figure 1 are in different planes. The radiation detectors 2 shown in the drawings are such that the devices 10, 12 and 24, 26, 28 are arranged within a package so that the reflection from the first device impinges on the subsequent device or devices and is then reflected back before leaving the package. The devices 10, 12 and 24, 26, 28 are indium/gallium/arsenide photodiodes. These photodiodes are planar diffused-type photovoltaic detectors and they require no bias voltages to operate. Biases can be applied to improve response speed although, for most applications, this may not be necessary. The connection of the parallel outputs to a trans-impedance amplifier is for convenience in order to convert the output current to a more easily measured voltage. It is to be appreciated that the embodiments of the invention described above with reference to the accompanying drawings have been given by way of example only and that modifications may be effected. Thus, for example, indium/gallium/arsenide radiation-sensitive devices other than the specified photodiodes may be employed, these other radiation-sensitive devices having different spectral responsivities and spectral ranges in the infra red. Although the radiation detectors 2 operate in the wavelength region of 980-1640nm, the radiation detectors 2 may operate down to around 500 nm and up to approximately 1750 nm but this occurs with progressively poorer performance and the radiation detectors 2 need to be calibrated outside the above specified operating wavelength region of 980-164θnm. The radiation detectors of the resent invention may be used for fibre optic applications for telecommunications systems, and they may also be used for any other suitable and appropriate applications.

Claims

1CCLAIMS
1. A radiation detector for detecting infrared radiation, which radiation detector comprises:
(i) an enclosure having means through which a radiation bean can enter the enclosure; (ii) at least two radiation-sensitive devices which produce electrical signals responsive to impinging radiation, and which are positioned inside the enclosure such that (a) the radiation beam can impinge upon a first one of the radiation-sensitive devices and be partially absorbed by that radiation-sensitive device, (b) any non-absorbed radiation is reflected from the first radiation-sensitive device to the next radiation sensitive device, and (c) the non-absorbed radiation from the last radiation-sensitive device is reflected back over the same path towards the first one cf the radiation-sensitive devices; and
(iii) an output means for providing external access to an electrical signal produced by the radiation- sensitive devices; and the radiation detector being such that the radiation-sensitive devices are indium/gallium/arsenide radiation-sensitive devices which enable the radiation detector to detect infrared radiation in the wavelength region of 980-1640 nm.
2. A radiation detector according to claim 1 in which the indium/gallium/arsenide radiation- sensitive devices are indium/gallium/arsenide photodiodes.
3. A radiation detector according to claim 1 or claim 2 and including trans-impedance amplifier means, and in which the outputs of the radiation-sensitive devices are connected to the trans-impedance amplifier means.
4. A radiation detector according to any one of the preceding claims in which the enclosure is one having a black inside surface.
5. A radiation detector for detecting infrared radiation, substantially as herein described with reference to the accompanying drawings.
6. Fibre optic apparatus when provided with a radiation detector as claimed in any one of the preceding claims.
7. Telecommunications apparatus when provided with fibre optic apparatus as claimed in claim 6.
PCT/GB1992/001550 1991-08-27 1992-08-21 Detector for infrared radiation WO1993004345A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9402297A GB2273771B (en) 1991-08-27 1992-08-21 Detector for infrared radiation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9118338.4 1991-08-27
GB919118338A GB9118338D0 (en) 1991-08-27 1991-08-27 A radiation detector for detecting infrared radiation

Publications (1)

Publication Number Publication Date
WO1993004345A1 true WO1993004345A1 (en) 1993-03-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2721108A1 (en) * 1994-06-09 1995-12-15 L2G Appts. determines illumination threshold for public lighting

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5694211A (en) * 1995-12-19 1997-12-02 Laboratory Of Molecular Biophotonics Light measuring apparatus for quantizing photon
US10032950B2 (en) 2016-02-22 2018-07-24 University Of Virginia Patent Foundation AllnAsSb avalanche photodiode and related method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971940A (en) * 1975-03-19 1976-07-27 Nasa Detector absorptivity measuring method and apparatus
JPS58170077A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor photodetector
US4498012A (en) * 1983-02-02 1985-02-05 United Detector Technology Absolute radiometric detector
EP0163295A2 (en) * 1984-05-31 1985-12-04 Fujitsu Limited A semiconductor photodetector and fabrication process for the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3889284A (en) * 1974-01-15 1975-06-10 Us Army Avalanche photodiode with varying bandgap
JPS5513907A (en) * 1978-07-17 1980-01-31 Kokusai Denshin Denwa Co Ltd <Kdd> Avalnche photo diode with semiconductor hetero construction
US4631566A (en) * 1983-08-22 1986-12-23 At&T Bell Laboratories Long wavelength avalanche photodetector
JPS61172381A (en) * 1984-12-22 1986-08-04 Fujitsu Ltd Inp group compound semiconductor device
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
JPH07123170B2 (en) * 1990-08-07 1995-12-25 光計測技術開発株式会社 Light receiving element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971940A (en) * 1975-03-19 1976-07-27 Nasa Detector absorptivity measuring method and apparatus
JPS58170077A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor photodetector
US4498012A (en) * 1983-02-02 1985-02-05 United Detector Technology Absolute radiometric detector
EP0163295A2 (en) * 1984-05-31 1985-12-04 Fujitsu Limited A semiconductor photodetector and fabrication process for the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 8, no. 4 (E-220)10 January 1984 & JP,A,58 170 077 ( FUJITSU ) 6 October 1983 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2721108A1 (en) * 1994-06-09 1995-12-15 L2G Appts. determines illumination threshold for public lighting
EP0687894A1 (en) * 1994-06-09 1995-12-20 L 2 G Detector of a luminosity threshold for controlling a public lighting system

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Publication number Publication date
GB9402297D0 (en) 1994-04-20
GB9118338D0 (en) 1991-10-16
GB2273771B (en) 1995-10-18
GB2273771A (en) 1994-06-29

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