WO1993003496A1 - Ameliorations apportees a la resolution spatiale d'un detecteur de particules - Google Patents

Ameliorations apportees a la resolution spatiale d'un detecteur de particules Download PDF

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Publication number
WO1993003496A1
WO1993003496A1 PCT/US1992/006308 US9206308W WO9303496A1 WO 1993003496 A1 WO1993003496 A1 WO 1993003496A1 US 9206308 W US9206308 W US 9206308W WO 9303496 A1 WO9303496 A1 WO 9303496A1
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WO
WIPO (PCT)
Prior art keywords
layer
scintillation
choosing
columns
range
Prior art date
Application number
PCT/US1992/006308
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English (en)
Inventor
Victor Perez-Mendez
Original Assignee
The Regents Of The University Of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/738,529 external-priority patent/US5171996A/en
Application filed by The Regents Of The University Of California filed Critical The Regents Of The University Of California
Priority to JP5503716A priority Critical patent/JPH07500454A/ja
Priority to EP19920916511 priority patent/EP0597943A4/en
Publication of WO1993003496A1 publication Critical patent/WO1993003496A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk

Definitions

  • This invention relates to improvements in spatial resolution in particle detectors, and more particularly to a luminescent layer in a particle detector.
  • a luminescent material such as cesium iodide (Csl) , potassium iodide (KI) , rubidium iodide (Rbl) , gallium selenide (Ga y Se) , gadolinium oxysulphate (Gd 2 0 2 S) , lanthanum oxysulphate (La 2 0 2 S) , cadmium sulphide (CdS) , zinc cadmium sulphide (Zn-Cdj.-S) , cadmium tungstate (CdW0 3 ) , or lead oxide (Pb0 2 ) , will receive incident charged particles or photons of high kinetic energy and convert part or all of this kinetic energy to one or a plurality of photons of individual energies lying in the range 1-4 eV.
  • Csl cesium iodide
  • KI potassium iodide
  • Rbl rubidium iodide
  • the electromagnetic radiation emitted by the luminescent material is not wholly directed in a single forward direction, but is emitted in all directions, although not isotropically. Preferably, most or all of this radiation should propagate . in approximately the forward direction, toward a photodiode layer that will provide an electrical signal indicating arrival of the incident high energy charged particles or photons. For this reason, many workers have attempted to promote forward direction emission of photons by the light-emitting atoms or molecules contained in the luminescent material.
  • the substrate-scintillation layer combination is then cooled to room temperature, and cracks develop in the thin scintillation layer as cooling proceeds. These cracks produce columns of scintillation material, separated by small air or vacuum gaps between adjacent columns and extending approximately perpendicularly to the substrate-scintillation layer interface.
  • the crack structure thereby produced has a random collection of shapes and associated diameters.
  • a process for making columnar structures of a luminescent layer on an X-ray screen is disclosed in U.S.Patent No. 4,069,355 by Lubowski et al. Depressions or valleys are etched at regular intervals in an underlying substrate, and the luminescent material is grown only on the raised portions of the substrate. The gaps between adjacent columns of luminescent material are filled with a highly reflecting material or with another luminescent material.
  • Sonoda in U.S.Patent No. 4,239,791, discloses a method for making a screen image intensifier.
  • a heated phosphorescent material layer is treated with a colder liquid material, such as acetone, to cause differential thermal contraction and form a plurality of elongated cracks in this layer running approximately perpendicular to the substrate-phosphorescent layer interface. These cracks are asserted to form optically independent columns of phosphorescent material.
  • a colder liquid material such as acetone
  • Riihimaki et al disclose an X-ray intensifying screen with a luminescent layer formed, in an unspecified manner, with a plurality of regularly spaced grooves therein to capture and guide light produced in the luminescent layer.
  • Van Leunen in U.S. Patent No. 4,712,011, discloses use of the columnar structure produced by the Ligtenberg, et al, invention, and deposits an X-ray-absorbing material in the air/vacuum gaps to absorb X-ray light incident on a gap. Up to five percent of the weight of the scintillation layer may be X-ray-absorbingmaterial deposited in the gaps, but no method of depositing the X-ray absorbing material is discussed.
  • a method for vapor deposition of a luminescent layer on a screen for image intensification is disclosed by Ligtenberg et al in U.S.Patent No. 4,842,894.
  • the vapor deposition crucible is positioned at about 20° relative to the normal to the screen, and gaps formed between columns of the luminescent material appear to be elongated bubbles of unspecified material (possibly air or a vacuum) .
  • the luminescent material apparently forms predominantly crystalline columns of this material.
  • the invention provides one or more methods for fabricating a sequence of columns of regular, controllable geometry and diameter perpendicular to the interface of the luminescent material with an adjacent material. These columns are separated by gaps that may be evacuate or illed with air, with a light-absorbing material, or with a light-producing or light-reflecting substance.
  • a thin layer of polyimide or other suitable etchable material is deposited on a substrate structure and a sequence of ridges or projections is etched in the polyimide material in a predetermined geometrical structure.
  • a luminescent material is slowly grown (rate ⁇ 250 ⁇ m/hr) on the ridge-containing surface to produce a plurality of columns separated by gaps in one or two dimensions.
  • the width of a ridge is varied according to the height of the luminescent layer to be grown so that the columns do not coalesce.
  • the ridges may be etched directly into a substrate material, such as glass, plastic, metal or amorphous or crystalline silicon or germanium.
  • the structure is put together as a "sandwich" of a first set of layers containing a photodiode layer and a second set of layers containing a luminescent layer.
  • the columnar structure thus produced reduces by about 58 percent the optical spread factor associated with light produced by conversion in the luminescent material, in one embodiment.
  • Figure 1 is a sectional side view of one embodiment of apparatus constructed according to the invention.
  • Figures 2 and 3 are sectional side views illustrating the columns formed in the luminescent layer in Figure 1.
  • Figures 4, 5, 6, 7 and 8 are schematic top views of triangular, rectangular, hexagonal, ovular and linear ridge patterns constructed on an underlayer according to the invention.
  • Figure 9 is a sectional side view of a second embodiment of the apparatus constructed according to the invention.
  • Figures 10A and 10B are sectional views illustrating a third embodiment of the invention.
  • Figure 11 is a graphical view illustrating a measure of the improvement in spatial resolution where the invention is used for X-ray and charged particle detection.
  • a substrate 12 is provided on which a photodiode layer 13 is deposited on one substrate surface.
  • the substrate material may be glass, plastic, a ceramic, a thin metal layer such as Al or Ti, or crystalline or amorphous silicon or germanium, and the photodiode material is preferably a hydrogenated amorphous column IV semiconductor material such as a-Si:H or a-Ge:H.
  • a transparent, electrically conductive, thin layer 14 (not drawn to scale) of material such as indium-tin-oxide ("ITO") , tin-oxide (“TO”) , or another suitable thin metal film is then deposited on an exposed surface of the photodiode layer 13 with a thickness of 1-100 nanometers (nm) .
  • the conductive layer 14 is at least partly optically transparent and allows passage of electromagnetic radiation (photons) of appropriate wavelengths between a luminescent layer positioned on one side of the conductive layer and a photodiode layer 13 positioned on the other side of the conductive layer.
  • the photodiode layer 13 and conductive layer 14 are contiguous here.
  • the substrate layer 12 may have any appropriate thickness, and the photodiode layer 13 may have a thickness of 1-10 ⁇ m or 10-100 ⁇ m for amorphous semiconductor material (e.g., a-Si:H or a-Ge:H) or crystalline semiconductor material (e.g., c-Si or c-Ge) , respectively.
  • the photodiode layer 13 has a plurality of electrical traces 21 connected at one end to this layer at regular intervals, and these traces are connected at their second ends to readout electronics 22 that receives signals generated within the photodiode layer.
  • a pattern layer 15 of etchable pattern material 15, such as polyimide resin, Si0 2 , or metals such as Al, Cr, Au, Ag, Pd or Pt, of thickness d 5-20 ⁇ m, is then deposited on an exposed surface of the conductive layer 14 as shown. Portions of the pattern layer 15 are etched to produce a one-dimensional or two-dimensional sequence of regularly spaced ridges 16 of the pattern material that project approximately perpendicularly to the interface or surface 17 between the conductive layer 14 and the pattern layer.
  • the ridges 16 have height « d 1# lateral thickness or width « d 2 , and are spaced apart from adjacent ridges by a distance « d 3 .
  • a small portion of this material may be allowed to remain at the interface 17, as shown in Figure 1; or the etchable pattern material 15 may be removed down to the interface 17, except for the ridges 16.
  • the interface 17 might be covered with a thin layer (not shown in Figure 1) of an etch stop material, such as a native oxide or silicon nitride, in a manner well known to workers in this art.
  • a luminescent layer 18 of luminescent material such as Csl, KI, Rbl, CdS, CdW0 3 , Zn x Cd,_ x S, Ga y Se, Gd 2 0 2 S, La 2 0 2 S, Pb0 2 or other suitable luminescent material
  • This evaporation process produces a sequence of cylinders or columns 19 of the luminescent material, separated by air or vacuum gaps 20 of diameter d gJ ⁇ ⁇ d 2 because of the presence of the ridges 16 of lateral thickness d 2 .
  • Use of a low growth rate improves adhesion and light emission efficiency of the luminescent material.
  • Certain of the luminescent materials may be activated with Na (Csl) , with TI (Csl) , or with a rare earth such as Ce, Pr, Nd or one of the other 11 rare earth elements (Gd 2 0 2 S) .
  • the thickness d 4 of the luminescent layer should preferably be no more than 50 d 2 in order to avoid gap closure.
  • the other luminescent materials mentioned above are believed to behave qualitatively similarly so that the minimum height required for gap closure scales approximately linearly with ridge width d 2 .
  • energetic particles 23 high energy photons or massive charged particles
  • the embodiment 11 Figure l
  • electromagnetic radiation or photons 25 of wavelength ⁇ 0 lying in the range 0.3 ⁇ m ⁇ ⁇ o ⁇ 0.7 ⁇ m, emitted by the luminescent material.
  • a photon 25 will propagate generally toward the interface 17
  • Table 1 presents the refractive indices and trapped fractions f ⁇ for some luminescent materials of interest. Although the fraction f ⁇ is less than 0.5, the fact that much of this radiation stays within the column in which it is produced enhances the spatial resolution of the particle detector constructed according to the embodiment 11 in Figure 1. This trapped fraction f ⁇ is approximately independent of the height of a column.
  • Zn x Cd_ -x S La 2 0 2 S Pb0 z Figures 4, 5, 6, 7 and 8 are schematic top views of triangular, rectangular, hexagonal, ovular (or circular) and "linear" arrays that provide suitable one-dimensional and two-dimensional ridge patterns for the etchable material 15 used in the embodiment 11 in Figure 1.
  • the linear array 51 shown in Figure 8 produces a sequence of parallel blocks or columns extending above the regions 55 and separated by gaps defined by the ridges 53. More generally, an array of closed polygonal ridges may be provided to define and promote initial formation of the columns and separating gaps.
  • Figure 9 illustrates a second embodiment 81 of the invention, in which the order of some of the layers is reversed.
  • a substrate layer 83 is patterned and etched to provide a sequence of ridges 85 of the substrate material extending approximatelyperpendicularly to the adjacent surface of the substrate.
  • the substrate layer material may be glass, plastic, thin metal, or crystalline or amorphous silicon or germanium.
  • a thin polyimide layer 84 may be deposited on the exposed surface of the substrate 83 and used for ridge formation by etching.
  • a luminescent layer 87 containing luminescent material such as Csl, KI, Rbl, CdS, ZnxCd,.
  • the luminescent material forms into a plurality of columns 89 that are separated by a sequence of air or vacuum gaps 91 defined by the ridges 85 as in Figure 1.
  • a sealant layer 93 of polyimide or similar materials is deposited over the luminescent layer 87, and an optically transparent conductive layer 95 of ITO or TO is then deposited over the sealant layer 93.
  • a photodiode layer 97 of a-Si:H, a-Ge:H or mixture thereof is deposited over the conductive layer.
  • the dimensions d,, d 2 , d 3 and d 4 of the ridges 85 and luminescent layer 87 are as in Figure 1.
  • the sealant layer 93, the conductive layer 95 and the photodiode layer 97 have preferred thicknesses in the respective ranges 5-10 ⁇ m, 1-100 nm, and 1-10 ⁇ m (or 10-100 ⁇ m) , respectively.
  • Energetic particles 99 are incident upon the structure 81 and will pass through the luminescent layer 87 before passing through the photodiode layer 97.
  • Figure 10A illustrates a third embodiment of the invention, which is initially constructed as two separate sets of layers.
  • the first set of layers includes a substrate 101, of arbitrary thickness, with a photodiode layer 103 of a-Si:H, a-Ge:H (or a combination thereof) , c-Si or c-Ge deposited on the first substrate 101.
  • the thickness of the photodiode layer may be 1-10 ⁇ m for amorphous Si or Ge and 10-100 ⁇ m for crystalline Si or Ge.
  • the second set of layers includes a second substrate 105, on which is deposited a luminescent layer including a plurality of cylinders or columns 107 of luminescent material, such as Csl, KI, Rbl, CdS, Zn x Cd,. x S, CdW0 3 , Ga y Se, Gd 2 0 2 S, La 2 0 2 S or Pb0 z , .
  • the columns 107 are separated by a plurality of one-dimensional or two-dimensional gaps 109 that are initially formed using ridges 111.
  • the ridges 111 are in turn formed as in the first or second embodiments, by etching polyimide or another suitable etchable material or by etching the underlying substrate 105.
  • the first and second set of layers are brought together as a "sandwich” and are, optionally, held together using a suitable "glue", such as optical grease, Canadian balsam or other suitable material that produces no effluents when this material cures and hardens.
  • a suitable "glue” such as optical grease, Canadian balsam or other suitable material that produces no effluents when this material cures and hardens.
  • the assembled apparatus as shown in Figure 10B with the associated electronics 113, then functions as a particle detector with improved spatial resolution.
  • One advantage of this third embodiment is that the first and second sets of layers may be fabricated independently. If a high temperature is needed to fabricate the columnar luminescent layer 107, the photodiode layer 103 is fabricated separately and is not subjected to this high temperature. Readout electronics is also present, but not shown, in Figures 2, 3, 9 and 10B.
  • Example. The following procedure is preferred for producing a ridge pattern in a polyimide layer.
  • DuPont PI 2722 material which contains both the polyimide and a photoresist material, may be used in place of the PI 2555 material.
  • the photoresist is then exposed to ultraviolet radiation in the desired pattern for about 15 sec, using photolithography equipment and procedures known in the art.
  • the irradiated photoresist is then baked for about 60 sec. and is developed.
  • the photoresist is immersed in a suitable developer, such as Kodak 934, for about 120 sec, then rinsed and dried.
  • a suitable developer such as Kodak 934
  • the polyimide is etched simultaneously when the photoresist is developed.
  • Figure 11 is a graphical view illustrating the improvement in spatial resolution, using the invention in one embodiment.
  • the triangles represent intensity of light received through a columnar structure of 450 ⁇ m thick Csl, fabricated according to the invention, with an a-si:H photodiode layer in the same configuration.
  • the FWHM is 230 ⁇ m, a reduction of about 58 percent in the point spread width in one dimension; in two dimensions, the point spread width reduction is estimated to be about 72 percent.
  • a particle detector constructed using the invention disclosed here may resolve lateral spatial separations as small as 10 - 50 ⁇ m.
  • the gaps 20 of 91 or 109 in Figures l, 2, 9 or 10A/10B may be filled, by capillary action or otherwise, with a light-absorbing material, such as Te, Sb or Sn (useful for Csl) , to reduce the point spread factor associated with light produced in a luminescent layer column fabricated according to the invention.
  • a light-absorbing material such as Te, Sb or Sn (useful for Csl)
  • interstitial material in the gaps between the cylinders or column structures which comprise the scintillation layer of the inventive detector. Spatial resolution can be improved by from 10% to 30% using this approach.
  • the interstitial material serves a variety of functions, including increasing structural integrity of the scintillation layer and improving the sensitivity of the detection capability.
  • Interstitial material increases the sensitivity of detection by limiting the intercolumnar transfer of light, particles, heat, and other factors.
  • low energy X-rays are typically generated in the columns. These will often be emitted from the column wall, generally at an incident angle. When this occurs, the low energy X-rays commonly impact adjacent columns, inducing cross talk in the detector of the adjacent column. This background signal lessens the acuity of the resulting detector, and compromises its acuity of the resulting detector, and compromises its spatial resolution.
  • Scintillation layer light generation which occurs at the periphery of the columnar surface or communicates to the interstitial areas also is a source of background noise. For instance, light which escapes internal reflection may enter an adjacent column, or even scatter farther afield of the actual point of production. As such, it will give a false reading as to the spatial position of the particle impact.
  • interstitial materials The ill effects of random light scatter and detection of errant low energy X-rays can be limited or fully ameliorated by the use of interstitial materials.
  • the choice of the material depends on a compromise between the desired results and ease of application. For instance, a multipurpose material would absorb both light and X-rays. Even if such a material did not have optimum qualities in both these functions, if it can perform both to a reasonable level it may be the material of choice. Examples of such multipurpose materials are T1 2 0 and WC1 6 .
  • interstitial material that absorbs light in the range of 300-700 nm in wave length.
  • the interstitial material may be reflective in nature. This has the advantage of returning the light signal to the appropriate column. The use of such materials allows the possibility of the light being correctly redirected through the column thus preventing a reading error.
  • Appropriate candidates for light absorbing interstitial materials are various dyes and inks, Dykem Blue, mercury and its salts, metals and their alloys, iodine and the like.
  • Interstitial material should have the capacity to absorb low energy X-rays produced within columns and capable of reaching adjacent columns. This quality is exemplified by a high density and a high Z value, preferably above 50. Mercury has high Z value and high density, and so is an excellent absorber of errant low energy X-rays. Mercury salts would have similar capacities. At a Z value of 50, iodine is in an acceptable range of X-ray absorption capability.
  • Vapor deposition must occur at a temperature which will not damage various components of the detector.
  • the cesium iodide layer is the limiting material in this regard. Therefore, materials selected for evaporation deposition in this case must have an evaporation temperature of less than 650 degrees Celsius. Good candidates for this process are thus mercury, with an evaporation temperature of 365 degrees Celsius, and iodine, with an evaporation temperature of less than 200 degrees Celsius. Various organic and inorganic compounds will also be useful in the vapor deposition process. Vapor deposition is accomplished by confining the scintillator and the interstitial material within an enclosed vessel. The interstitial material is then evaporated, and recondensed on the substrate surface and interstitial area.
  • the material is heated to provide the necessary evaporation.
  • the substrate is preferably heated to increase wetting and creep effects, and to improve adherence. A higher quality deposition in a shorter period of time is achieved compared to a system where the substrate is not heated.
  • the entire treatment chamber is warmed to avoid preferential deposition on the chamber wall.
  • the interstitial area can also be filled using materials dissolved or suspended in a liquid carrier.
  • a liquid carrier In the case of the presently described materials, water as a solvent is counter-indicated because of its ill effect on the inventive materials.
  • Useful solvents in this regard are non-aqueous materials such as acetone, carbon tetrachloride, anhydrous alcohols and the like.
  • Appropriate solutions for treatment of the inventive scintillation layers are iodine dissolved in anhydrous methyl or higher alcohols, or commercial dye materials such as organic inks. Sequential dipping and five minute drying produces an excellent result with these materials.
  • a required finishing step is common to both the vapor deposition and the solution deposition processes. If filling of the interstices to the surface level is to be assured, deposition must also be allowed on the surface. However, in the functioning detector, this layer must be removed. There are many methods available for removing this surface coating, including chemical dissolution and mechanical abrasion.
  • Solvent removal of the surface film must be approached with care to avoid damage of the interstitial deposits.
  • the solvent is provided in an absorbent material, such as a blotter, and wiped across the surface. This is done only until visual observation indicates removal of the undesired film.
  • Mechanical abrasion can also be used to remove the excess film layer. Simple sanding or scraping will often surface for the needs of the present invention. This may have an advantageous effect of preparing the surface for application of additional components.

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Abstract

Procédé et appareil (11) de production de colonnes séparées (19) d'une couche de matière de scintillation (18), s'utilisant dans la détection de rayons X et de particules chargées de haute énergie (23) avec une résolution spatiale améliorée. Une configuration de crêtes ou projections (16) est formée sur une surface d'une couche d'un substrat ou dans une fine couche polyamide (15), et la couche de scintillation (18) peut croître à une température et une vitesse de croissance régulées sur le matériau (16) contenant les crêtes. La couche de matière de scintillation (18) forme de préférence des cylindres ou colonnes (19) séparées par des intervalles (20) se conformant au motif ou à la configuration de crêtes (16), et ces colonnes (19) guident la majeure partie de la lumière produite dans la couche de scintillation (18) le long des colonnes (19) pour être détectée ultérieurement dans une couche de photodiode (13). Les intervalles (20) peuvent être remplis d'un matériau absorbant la lumière afin d'améliorer encore plus la résolution spatiale du détecteur de particules.
PCT/US1992/006308 1991-07-31 1992-07-30 Ameliorations apportees a la resolution spatiale d'un detecteur de particules WO1993003496A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5503716A JPH07500454A (ja) 1991-07-31 1992-07-30 粒子検出器の空間分解能の改良
EP19920916511 EP0597943A4 (en) 1991-07-31 1992-07-30 Improvements in particle detector spatial resolution.

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/738,529 US5171996A (en) 1991-07-31 1991-07-31 Particle detector spatial resolution
US738,529 1991-07-31
US92150592A 1992-07-29 1992-07-29
US921,505 1992-07-29

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Publication Number Publication Date
WO1993003496A1 true WO1993003496A1 (fr) 1993-02-18

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JP (1) JPH07500454A (fr)
CA (1) CA2114539A1 (fr)
WO (1) WO1993003496A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5368882A (en) * 1993-08-25 1994-11-29 Minnesota Mining And Manufacturing Company Process for forming a radiation detector
US5460980A (en) * 1993-09-27 1995-10-24 Minnesota Mining And Manufacturing Company Process for forming a phosphor
EP0779521A1 (fr) * 1995-12-14 1997-06-18 General Electric Company Détecteur de rayons X pour le contrÔle automatique de l'exposition dans un appareil d'imagerie
GB2311896A (en) * 1996-04-04 1997-10-08 Eev Ltd Detectors for high energy radiation
NL1003390C2 (nl) * 1996-06-21 1997-12-23 Univ Delft Tech Vlakke stralingssensor en werkwijze voor haar vervaardiging.
US7148486B2 (en) 2002-09-23 2006-12-12 Siemens Aktiengesellschaft Image detector for x-ray devices with rear-contact organic image sensors
US10061036B2 (en) 2015-02-19 2018-08-28 Sony Corporation Radiation detector, method of manufacturing radiation detector, and imaging apparatus

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WO1998057350A1 (fr) * 1997-06-13 1998-12-17 Gatan, Inc. Procedes et appareil servant a ameliorer la resolution et a reduire le bruit dans un detecteur d'images pour microscope electronique
DE10061576A1 (de) * 2000-12-11 2002-06-27 Agfa Gevaert Ag Speicherschicht und Wandlungsschicht sowie Vorrichtung zum Auslesen von Röntgeninformationen und Röntgenkassette
DE10217426B4 (de) * 2002-04-18 2006-09-14 Forschungszentrum Jülich GmbH Ortsauflösender Detektor für die Messung elektrisch geladener Teilchen und Verwendung des Detektors
JP5875420B2 (ja) * 2011-04-07 2016-03-02 キヤノン株式会社 放射線検出素子およびその製造方法
JP6515958B2 (ja) * 2012-06-25 2019-05-22 ソニー株式会社 放射線検出器及びその製造方法

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US3783297A (en) * 1972-05-17 1974-01-01 Gen Electric X-ray image intensifier input phosphor screen and method of manufacture thereof
US4069355A (en) * 1975-04-28 1978-01-17 General Electric Company Process of making structured x-ray phosphor screen
US4656359A (en) * 1983-11-09 1987-04-07 Siemens Gammasonics, Inc. Scintillation crystal for a radiation detector

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783297A (en) * 1972-05-17 1974-01-01 Gen Electric X-ray image intensifier input phosphor screen and method of manufacture thereof
US4069355A (en) * 1975-04-28 1978-01-17 General Electric Company Process of making structured x-ray phosphor screen
US4656359A (en) * 1983-11-09 1987-04-07 Siemens Gammasonics, Inc. Scintillation crystal for a radiation detector

Non-Patent Citations (1)

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Title
See also references of EP0597943A4 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5368882A (en) * 1993-08-25 1994-11-29 Minnesota Mining And Manufacturing Company Process for forming a radiation detector
US5460980A (en) * 1993-09-27 1995-10-24 Minnesota Mining And Manufacturing Company Process for forming a phosphor
EP0779521A1 (fr) * 1995-12-14 1997-06-18 General Electric Company Détecteur de rayons X pour le contrÔle automatique de l'exposition dans un appareil d'imagerie
GB2311896A (en) * 1996-04-04 1997-10-08 Eev Ltd Detectors for high energy radiation
WO1997038328A1 (fr) * 1996-04-04 1997-10-16 Eev Limited Detecteur solide ameliore
NL1003390C2 (nl) * 1996-06-21 1997-12-23 Univ Delft Tech Vlakke stralingssensor en werkwijze voor haar vervaardiging.
US7148486B2 (en) 2002-09-23 2006-12-12 Siemens Aktiengesellschaft Image detector for x-ray devices with rear-contact organic image sensors
US10061036B2 (en) 2015-02-19 2018-08-28 Sony Corporation Radiation detector, method of manufacturing radiation detector, and imaging apparatus

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JPH07500454A (ja) 1995-01-12
CA2114539A1 (fr) 1993-02-18
EP0597943A4 (en) 1994-07-27
EP0597943A1 (fr) 1994-05-25

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