WO1992013385A1 - Systeme de conversion de puissance de haute frequence, haute densite - Google Patents

Systeme de conversion de puissance de haute frequence, haute densite Download PDF

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Publication number
WO1992013385A1
WO1992013385A1 PCT/US1992/000700 US9200700W WO9213385A1 WO 1992013385 A1 WO1992013385 A1 WO 1992013385A1 US 9200700 W US9200700 W US 9200700W WO 9213385 A1 WO9213385 A1 WO 9213385A1
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WO
WIPO (PCT)
Prior art keywords
frequency
transistor
input
power converter
voltage
Prior art date
Application number
PCT/US1992/000700
Other languages
English (en)
Inventor
Dawari Datubo Dan-Harry
Original Assignee
Dan Harry Dawari Datubo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dan Harry Dawari Datubo filed Critical Dan Harry Dawari Datubo
Publication of WO1992013385A1 publication Critical patent/WO1992013385A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/10—Arrangements incorporating converting means for enabling loads to be operated at will from different kinds of power supplies, e.g. from ac or dc
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/337—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
    • H02M3/3376—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration with automatic control of output voltage or current
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to AC/DC and DC/DC converters and it is directed towards eliminating or minimizing switching losses that occur in a controlled switch of a power converter while increasing the switching frequency to the 1 - 10 mega- Hertz range.
  • Switching power conversion systems have relied on manual switches or electro-mechanical switches in order to configure an input voltage to either a full wave or voltage doubler configuration and where an opto-triac has been used it has not been properly synchronized with the control circuit for proper coordination and control of the entire system. It will be desirable to have a configuration circuit controlled by a controlled circuit. This ensures that the converter will not operate until an adequate line voltage is available. Further this method reduces component count and is cost effective.
  • PWM pulse width modulation
  • L r resonance inductor
  • C r resonance capacitor
  • a controlled high-speed, high-efficiency electronic switch for example a MOSFET switch driven at a very high frequency has a significantly large amount of energy stored in the junction capacitance during each switching cycle. This energy can be properly utilized for conversion and the capacitance can be used as the resonant frequency (F r ) switching component. This will increase switching frequency and improve converter efficiency and power density.
  • two power MOSFET switches each having an effective junction capacitance (C QSS ) are connected to each order in source-drain configuration with the source-drain node connected in series to an inductor (L r ) and a transformer (T) .
  • the inductor (L r ) forms a series resonance tank with the junction capacitance C QSS that is parallel loaded.
  • This arrangement is equivalent to placing the resonant capacitor (C r ) in parallel to the controlled switch which allows the controlled switch voltage to rise slowly at turn-off of switch, and ring back sinusoidally, so that the controlled switch current will rise and fall to zero before the rise of switch voltage to eliminate switching losses.
  • the second object of the present invention is to provide an integrated control module (USPCM) to handle the following housekeeping functions:
  • Input voltage configuration to either a full-wave or a voltag doubler configuration for any two predetermined ranges of voltage.
  • Fig 1 is a block diagram of the preferred embodiment of the power conversion system of this invention.
  • Fig 2 is a schematic diagram of a preferred embodiment of the input stage of the system of fig 1;
  • Fig 3 is a schematic diagram of a preferred embodiment of the conversion and output stage of system of fig 1;
  • Fig 4 is a schematic diagram the diagram of a portion of the conversion stage of fig 3 also illustrating the equivalent circuit
  • Fig 5A is a more detailed schematic diagram of the conversion stage of fig 3;
  • Fig 5B is a timing diagram illustrating the operation of the conversion stage of fig 5A
  • Fig 6A is a schematic diagram of an alternative single-ended conversion stage of this invention.
  • Fig 6B is a timing diagram illustrating the operation of the conversion stage of fig 6A.
  • Fig 7 is a schematic block diagram of a functional circuit illustrating the preferred embodiment of the USPCM of the power conversion system of this invention.
  • Fig 1 is a block diagram showing the entire converter and its inter-connection.
  • Transformer 18 couples power from the conversion stage to the output stage.
  • Input stage 12 can accept an AC or DC input.
  • the input stage 12 of the power conversion system including a pair of input terminals 1 and 2 for connecting the converter to a source of AC/DC power.
  • the input terminals 1 and 2 are connected to a bridge rectifier BR01 having its negative pin connected to a common ground connection and the positive pin connected to the following: positive pin of the charge holding capacitor C03 that is series connected to the charge holding capacitor C04 at node N3, resistor R03 which is in series to a parallel connection of resistor R04 and to a bypass capacitor C01 at node Nl and resistor R05 which is in series to a parallel connection of resistor R04 and bypass capacitor C02 at node N2.
  • Terminal 2 is also connected to pin 4 of the optocoupler triac OPTO01 via resistor R02.
  • Pin 6 of OPTO01 is also connected to node 3 in open or short circuit configuration.
  • Pin 1 of OPTO01 is connected to the positive pin of bridge rectifier BR01 and its pin 2 is connected to the emitter of QOl via a current limiting resistor ROl.
  • the collector of QOl is connected to ground.
  • the base of QOl, the nodes 1, and 2 and the positive pin of bridge rectifier BR01 are connected to pins 7, 6 , 5, and 16 of USPCM respectively.
  • Terminals 3, 4 and 5 are for onward connection to the conversion and output stage. Referring to fig 7 the USPCM 20, Pin 16 is connected to node 4, the DC high voltage line.
  • an integral high voltage (450 volts rated) MOSFET Ql that operates in depletion mode is connected to an amplifier circuit 5A referenced at 10 volts in order to implement a linear regulator with an output voltage of 12 volts .
  • This is a startup regulator that provides the initial power to the USPCM.
  • Q2 is a second regulator of the type described above but of low voltage depletion mode MOSFET.
  • 6A is an amplifier circuit referenced at 12 volts but supplied voltage through pin 15 by the low voltage auxiliary winding (not shown in any diagram) of transformer T01 of fig 3. Because the outputs of both regulators feed into one another, the low input regulator, when operational, will shut down the startup voltage regulator.
  • Circuits 2A and 3A are comparators with normally low outputs.
  • the said comparators compare the voltage level of said DC line at terminal 3 by sensing the voltage present at node 2 to their respective references (2.2v & 3.2v) to determine if it is within a predetermined range. If the said DC line is below range, circuit 2A output goes high causing the normally high inverters U5 and U6 to go low shutting down circuit 8A the voltage controlled oscillator circuit and the nand gates U23 and U24 that drive the gates of the MOSFET P-junction and N-junction totem-pole QA1 and QA2 configuration and QB1 and QB2 configuration respectively.
  • the controlled switch voltage transition must not overlap the current transition.
  • the controlled switch current must rise slowly from zero in time for the turn-on transition, and ring back sinusoidally to zero in time for turn-off transition.
  • the control circuit driving the controlled switch must terminate the gate drive pulse at a precise time.
  • the inherent junction capacitance (C oss ) of a MOSFET switch offers a suitable and adequate solution.
  • the resonant frequency of the conversion stage omega is given by the formula:
  • the USPCM 20 fig 7 drives the base of MOSFET devices QOl and Q02, Fig 3 through pin 8 and pin 9 respectively.
  • the totem pole configuration of the USPCM drive circuits comprising of P- channel and N-channel MOSFET QA1 and QA2 of output pin ⁇ and QB1 and QB2 are capable of sourcing short current pulses of more than two amps. Feedback control is through pins 1, 2, 3 and 4.
  • Circuit 1A provides error amplification and isolation is provided by USPCM optocoupler Q3.
  • Q3 collector decreases or increases linearly the voltage supply of circuit 8A thereby causing the period of its oscillation to vary accordingly.
  • I D g flows out of the transformer TI, in opposite direction to the flow of Ipg ⁇ '
  • the off period (T 0FF ) for DRVA and DRVB varies to in order to provide regulation, but the on period (T QN ) for V DRVA and DRVB is constant.
  • the variation T QFF provides for frequency variation within a pre-set boundary.
  • resonant frequency looking into pin P2 of transformer TI is equal to the switching frequency of Ql.
  • the sequence of events described for Q2 in the case of double ended configuration applies for Ql for the single ended configuration.
  • C QSS which is parasitic capacitance
  • switching in the mega Hertz range of frequency without switching losses becomes possible, because at very high frequency the value of C QSS is very significant for both energy storage and shaping V DS into a sinusoidal wave, which ensures that the fall of V DS will not overlap the rise of I DS , thereby producing lossless switching.
  • the high frequency switching allows the efficient transfer of power using an extremely small transformer, providing greater power density, also made possible by the decreased power losses.
  • this arrangement provides for the use of a smaller inductor on the transformer output.
  • an integrated USPCM permits input voltage configuration, input under/over voltage sensing, variable frequency modulation, pre- start and operating voltage regulation and high current drive.
  • MOSFET junction capacitance provides resonance tank oscillation, increased resonance frequency operation, improved converter efficiency, increased power density and low component count per converter.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Système de conversion de puissance de haute fréquence, haute densité permettant une commutation de puissance sans perte à l'aide d'un convertisseur de puissance mis à la terre par un ou par deux côtés, le convertisseur mis à la terre par un côté comprenant une paire de bornes d'entrée (+Vin, -Vin) destinées à recevoir une tension de courant continu ou de courant alternatif redressé, un transformateur (T1) dont le primaire passe par les bornes d'entrée, un transistor (Q2) connecté en série entre une borne d'entrée (-Vin) et le primaire du transformateur, un inducteur (L1) connecté en série entre l'autre borne d'entrée (+Vin) et l'autre côté du primaire, dans lequel le transistor (Q2) est commuté afin de transmettre une impulsion de courant de sortie sinusoïdal au primaire du transformateur. La capacité parasite (Coss) du transistor (Q2) forme un réservoir résonnant avec l'inducteur (L1) permettant ainsi une commutation dans la gamme de fréquences mega Hz sans pertes à la communication.
PCT/US1992/000700 1991-01-29 1992-01-27 Systeme de conversion de puissance de haute frequence, haute densite WO1992013385A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US64706591A 1991-01-29 1991-01-29
US647,065 1991-01-29
US81887092A 1992-01-10 1992-01-10
US818,870 1992-01-10

Publications (1)

Publication Number Publication Date
WO1992013385A1 true WO1992013385A1 (fr) 1992-08-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1992/000700 WO1992013385A1 (fr) 1991-01-29 1992-01-27 Systeme de conversion de puissance de haute frequence, haute densite

Country Status (3)

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AU (1) AU1364692A (fr)
IE (1) IE920290A1 (fr)
WO (1) WO1992013385A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999019976A1 (fr) * 1997-10-11 1999-04-22 Robert Bosch Gmbh Procede pour le controle du comportement de commutation d'un actionneur d'un convertisseur direct, et convertisseur direct y relatif
WO2001069983A1 (fr) * 2000-03-14 2001-09-20 Tridonic Atco Gmbh & Co. Kg Transformateur électronique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622627A (en) * 1984-02-16 1986-11-11 Theta-J Corporation Switching electrical power supply utilizing miniature inductors integrally in a PCB
US4860184A (en) * 1987-09-23 1989-08-22 Virginia Tech Intellectual Properties, Inc. Half-bridge zero-voltage switched multi-resonant converters
US4959765A (en) * 1988-02-24 1990-09-25 Agence Spatiale Europeenne DC to DC converter using quasi-resonance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622627A (en) * 1984-02-16 1986-11-11 Theta-J Corporation Switching electrical power supply utilizing miniature inductors integrally in a PCB
US4860184A (en) * 1987-09-23 1989-08-22 Virginia Tech Intellectual Properties, Inc. Half-bridge zero-voltage switched multi-resonant converters
US4959765A (en) * 1988-02-24 1990-09-25 Agence Spatiale Europeenne DC to DC converter using quasi-resonance

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC ENGINEERING, Vol. 53, No. 656, issued September 1981, BAILEY et al., "200 KHz Power FET Technology in OEM Modular Power Supplies", see pages 39,40,42,45,47,49. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999019976A1 (fr) * 1997-10-11 1999-04-22 Robert Bosch Gmbh Procede pour le controle du comportement de commutation d'un actionneur d'un convertisseur direct, et convertisseur direct y relatif
WO2001069983A1 (fr) * 2000-03-14 2001-09-20 Tridonic Atco Gmbh & Co. Kg Transformateur électronique

Also Published As

Publication number Publication date
AU1364692A (en) 1992-08-27
IE920290A1 (en) 1992-07-29

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