WO1991011288A1 - Machine a micro-faisceau laser d'intervention sur des objets a couches minces, tels que des circuits integres - Google Patents

Machine a micro-faisceau laser d'intervention sur des objets a couches minces, tels que des circuits integres Download PDF

Info

Publication number
WO1991011288A1
WO1991011288A1 PCT/FR1991/000061 FR9100061W WO9111288A1 WO 1991011288 A1 WO1991011288 A1 WO 1991011288A1 FR 9100061 W FR9100061 W FR 9100061W WO 9111288 A1 WO9111288 A1 WO 9111288A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
machine according
pulses
approximately
micro
Prior art date
Application number
PCT/FR1991/000061
Other languages
English (en)
French (fr)
Inventor
Jean-Jacques Girard
Gérard Pelous
Didier Tonneau
Original Assignee
Bertin & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bertin & Cie filed Critical Bertin & Cie
Publication of WO1991011288A1 publication Critical patent/WO1991011288A1/fr

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/485Adaptation of interconnections, e.g. engineering charges, repair techniques
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • B23K2103/10Aluminium or alloys thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • the invention relates to a laser micro-beam machine for working on thin-filmed objects, such as for example integrated electronic circuits, in particular for cutting thin films of a thermally conductive material.
  • the object of the present invention is in particular to avoid this drawback, and to improve this machine so as to allow a very fine and very precise cut of thin layers made in particular of materials which are good conductors of heat.
  • the invention proposes a laser micro-beam machine of the aforementioned type, comprising a laser coupled to a mrcr ⁇ s " cope making it possible to focus the point of impact of the laser beam on an object with thin layers, such as an integrated electronic circuit for example, characterized in that the laser is a laser pulsed, has short duration pulses and low average power.
  • the duration of the pulses is between a few nanoseconds and a few hundred nanoseconds approximately, their repetition frequency is between 100 Hz and a few kHz approximately, the energy of the laser beam is approximately 20 to 100 micro ⁇ joules per pulse, while the average power of the laser is around 20 to 100 mW. Thanks to the very short duration of the pulses emitted by the laser, the heat remains confined in an area localized at the point of impact of the laser beam on a thin layer, so that one can achieve a very fast and precise cut of this thin layer by sublimation of the material of this thin layer, without risk of damaging the surrounding areas, and in addition the energy expended to make this cut is much lower than the corresponding energy required in the case of use of a continuous laser.
  • the continuous laser used in the machine described in French patent 2 608 484 has a power of about Watt, while the pulsed laser used in the context of the present invention has an average power of about 40 to 50 mW, about twenty times lower.
  • the laser is made of solid state components, of the YAG or YLF type, and is pumped by a flash lamp or a laser diode.
  • a laser of this type is reliable, has a very long service life, and reduced servitudes.
  • the laser is associated with a frequency doubler, so as to emit a beam of wavelength of about 530 nm, which allows, on the one hand, good absorption by silicon and, on the other hand, to reduce the diameter of the point of impact of the laser beam on the object, and therefore to obtain better cutting finesse.
  • This machine is for example of the type described in French Patent 2,608,484 and then essentially comprises a laser 10 at the outlet of which is provided an optical system 12 leading to a microscope 14 of which an objective 16 is oriented towards an object 18 with thin layers.
  • Lighting means 20 are suitably connected to the microscope 14, which is itself connected to display means 22 making it possible to observe the action of the laser microbeam on the object 18.
  • Control means 24 laser 10 and the displacement of the laser micro-beam on the surface of the object 18 are also provided.
  • the laser beam transmission path comprising the optical system 12 and the microscope 14, the lighting path connecting the microscope 14 to the lighting means 20, and the display path, connecting the microscope- 14 by means of vi ⁇ sualisation 22, are carried by the same rigid and non-deformable plate, mounted on a fixed frame.
  • the generator used is of the pulse type, such as for example a laser with bars Ud + YAG or YLF, pumped by a flash lamp or a laser diode, and having an average power of 1 40 mW, with an energy of 40 J per pulse, the pulse repetition frequency being of the order of 1 kHz.
  • Lasers of this type have a small footprint, reduced servitudes, and a very long lifetime, due to their realization with components in the solid state. They can be equipped with a frequency doubler (designated here by the reference 26) which is a non-linear cris ⁇ tal placed in the laser cavity, which allows to emit a beam having a wavelength approximately 530 nm for better absorption by the silicon (in the case of processing of integrated circuits) and finer focusing of the laser micro-beam on the surface of the object 18 (the diameter of the point of impact of the laser micro-beam on the object 18 being less than the micrometer).
  • a frequency doubler designated here by the reference 26
  • the reference 26 is a non-linear cris ⁇ tal placed in the laser cavity, which allows to emit a beam having a wavelength approximately 530 nm for better absorption by the silicon (in the case of processing of integrated circuits) and finer focusing of the laser micro-beam on the surface of the object 18 (the diameter of the point of impact of the
  • Q SWITCH acousto-optical modulator 28
  • the machine according to the invention allows precise and fine cuts of very conductive materials such as gold or aluminum, by sublimation of these materials.
  • very conductive materials such as gold or aluminum
  • the heating between neighboring parts of the surface of the object 18, which is linked to the average power deposited, is very low compared to the case of the use of a continuous laser.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
PCT/FR1991/000061 1990-02-02 1991-01-31 Machine a micro-faisceau laser d'intervention sur des objets a couches minces, tels que des circuits integres WO1991011288A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9001226A FR2657803A1 (fr) 1990-02-02 1990-02-02 Machine a micro-faisceau laser d'intervention sur des objets a couches minces, tels que des circuits integres.
FR90/01226 1990-02-02

Publications (1)

Publication Number Publication Date
WO1991011288A1 true WO1991011288A1 (fr) 1991-08-08

Family

ID=9393337

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR1991/000061 WO1991011288A1 (fr) 1990-02-02 1991-01-31 Machine a micro-faisceau laser d'intervention sur des objets a couches minces, tels que des circuits integres

Country Status (2)

Country Link
FR (1) FR2657803A1 (enrdf_load_stackoverflow)
WO (1) WO1991011288A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2727780A1 (fr) * 1994-12-01 1996-06-07 Solaic Sa Procede et installation pour traiter en surface une bande de matiere plastique portant des modules pour cartes electroniques

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608484A1 (fr) * 1986-12-23 1988-06-24 Bertin & Cie Machine a microfaisceau laser d'intervention sur des objets a couches minces de materiau
WO1989012525A1 (en) * 1988-06-17 1989-12-28 N.V. Philips' Gloeilampenfabrieken Method of micro-working the surface of a workpiece while using a laser beam

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608484A1 (fr) * 1986-12-23 1988-06-24 Bertin & Cie Machine a microfaisceau laser d'intervention sur des objets a couches minces de materiau
WO1989012525A1 (en) * 1988-06-17 1989-12-28 N.V. Philips' Gloeilampenfabrieken Method of micro-working the surface of a workpiece while using a laser beam

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Optical Engineering, vol. 17, no. 3, mai/juin 1978 M. Oakes: "An introduction to thick film resistor trimming by laser", pages 217-224, voir page 219 *
Third IEEE/CHMT International Electronic Manufacturing Technology Symposium "Manufacturing Technology - The Competitive Advantage", 12 à 14 octobre 1987, Disneyland Hotel, Anaheim, CA; IEEE, 1987 (US) G. Auvert et al.: "A continuous argon laser based system for micromachining of integrated circuits", pages 137_142 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2727780A1 (fr) * 1994-12-01 1996-06-07 Solaic Sa Procede et installation pour traiter en surface une bande de matiere plastique portant des modules pour cartes electroniques

Also Published As

Publication number Publication date
FR2657803B1 (enrdf_load_stackoverflow) 1994-11-25
FR2657803A1 (fr) 1991-08-09

Similar Documents

Publication Publication Date Title
EP2576125B1 (fr) Procédé et installation d'usinage laser pulsé, en particulier pour le soudage, avec variation de l apuissance de chaque impulsion laser
US7528342B2 (en) Method and apparatus for via drilling and selective material removal using an ultrafast pulse laser
US6054673A (en) Method and apparatus for laser drilling
TWI533962B (zh) 使用具有利的脈衝形狀之雷射脈衝的脈衝串在薄膜材料中劃線的方法及設備
WO2005043699B1 (en) Laser processing of a locally heated target material
CH640448A5 (fr) Procede d'ebavurage d'une piece mecanique et dispositif de mise en oeuvre du procede.
WO2002085080A1 (fr) Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie
CN1330580A (zh) 激光处理
FR2639150A1 (fr) Dispositif optoelectronique de puissance et son procede de realisation
FR2751467A1 (fr) Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers
FR2647042A1 (fr) Dispositif de guidage de faisceau pour l'usinage de pieces au laser
EP1477266A1 (fr) Procédé et dispositif de soudage par points au laser pour contrôler efficacement la qualité de la soudure obtenue
EP1490933A1 (fr) Cavite laser de forte puissance crete et association de pluisieurs de ces cavites
FR2977513A1 (fr) Procede de coupage laser a fibre ou disque avec distribution d'intensite du faisceau laser en anneau
FR2648282A1 (fr) Laser mopa impulsionnel de puissance a structure mopa avec milieu non lineaire de transfert
FR2814599A1 (fr) Dispositif laser de forte puissance crete et application a la generation de lumiere dans l'extreme ultra violet
EP0751594A1 (fr) Cavité microlaser et microlaser solide impulsionnel à déclenchement actif par micromodulateur
WO1991011288A1 (fr) Machine a micro-faisceau laser d'intervention sur des objets a couches minces, tels que des circuits integres
FR2661371A1 (fr) Procede et dispositif de restauration d'óoeuvre d'art.
FR2530878A1 (fr) Procede pour moduler un faisceau laser
FR2617364A1 (fr) Procede et dispositif de production d'electrons utilisant un couplage de champ et l'effet photoelectrique
EP0038297A1 (fr) Procédé d'ébavurage d'un instrument acéré, dispositif de mise en oeuvre du procédé et instrument acéré obtenu par le procédé
CN115210974B (zh) 激光加工装置及激光加工方法
EP1361954B1 (fr) Dispositif de fabrication d'un cliche d'impression pour l'imprimerie
EP2013950A1 (fr) Oscillateur laser pulsé a durée d'impulsion variable

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE