WO1991011288A1 - Laser micro-film machine for processing objects having thin films such as integrated circuits - Google Patents

Laser micro-film machine for processing objects having thin films such as integrated circuits Download PDF

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Publication number
WO1991011288A1
WO1991011288A1 PCT/FR1991/000061 FR9100061W WO9111288A1 WO 1991011288 A1 WO1991011288 A1 WO 1991011288A1 FR 9100061 W FR9100061 W FR 9100061W WO 9111288 A1 WO9111288 A1 WO 9111288A1
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WO
WIPO (PCT)
Prior art keywords
laser
machine according
pulses
approximately
micro
Prior art date
Application number
PCT/FR1991/000061
Other languages
French (fr)
Inventor
Jean-Jacques Girard
Gérard Pelous
Didier Tonneau
Original Assignee
Bertin & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bertin & Cie filed Critical Bertin & Cie
Publication of WO1991011288A1 publication Critical patent/WO1991011288A1/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/485—Adaptation of interconnections, e.g. engineering charges, repair techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • the invention relates to a laser micro-beam machine for working on thin-filmed objects, such as for example integrated electronic circuits, in particular for cutting thin films of a thermally conductive material.
  • the object of the present invention is in particular to avoid this drawback, and to improve this machine so as to allow a very fine and very precise cut of thin layers made in particular of materials which are good conductors of heat.
  • the invention proposes a laser micro-beam machine of the aforementioned type, comprising a laser coupled to a mrcr ⁇ s " cope making it possible to focus the point of impact of the laser beam on an object with thin layers, such as an integrated electronic circuit for example, characterized in that the laser is a laser pulsed, has short duration pulses and low average power.
  • the duration of the pulses is between a few nanoseconds and a few hundred nanoseconds approximately, their repetition frequency is between 100 Hz and a few kHz approximately, the energy of the laser beam is approximately 20 to 100 micro ⁇ joules per pulse, while the average power of the laser is around 20 to 100 mW. Thanks to the very short duration of the pulses emitted by the laser, the heat remains confined in an area localized at the point of impact of the laser beam on a thin layer, so that one can achieve a very fast and precise cut of this thin layer by sublimation of the material of this thin layer, without risk of damaging the surrounding areas, and in addition the energy expended to make this cut is much lower than the corresponding energy required in the case of use of a continuous laser.
  • the continuous laser used in the machine described in French patent 2 608 484 has a power of about Watt, while the pulsed laser used in the context of the present invention has an average power of about 40 to 50 mW, about twenty times lower.
  • the laser is made of solid state components, of the YAG or YLF type, and is pumped by a flash lamp or a laser diode.
  • a laser of this type is reliable, has a very long service life, and reduced servitudes.
  • the laser is associated with a frequency doubler, so as to emit a beam of wavelength of about 530 nm, which allows, on the one hand, good absorption by silicon and, on the other hand, to reduce the diameter of the point of impact of the laser beam on the object, and therefore to obtain better cutting finesse.
  • This machine is for example of the type described in French Patent 2,608,484 and then essentially comprises a laser 10 at the outlet of which is provided an optical system 12 leading to a microscope 14 of which an objective 16 is oriented towards an object 18 with thin layers.
  • Lighting means 20 are suitably connected to the microscope 14, which is itself connected to display means 22 making it possible to observe the action of the laser microbeam on the object 18.
  • Control means 24 laser 10 and the displacement of the laser micro-beam on the surface of the object 18 are also provided.
  • the laser beam transmission path comprising the optical system 12 and the microscope 14, the lighting path connecting the microscope 14 to the lighting means 20, and the display path, connecting the microscope- 14 by means of vi ⁇ sualisation 22, are carried by the same rigid and non-deformable plate, mounted on a fixed frame.
  • the generator used is of the pulse type, such as for example a laser with bars Ud + YAG or YLF, pumped by a flash lamp or a laser diode, and having an average power of 1 40 mW, with an energy of 40 J per pulse, the pulse repetition frequency being of the order of 1 kHz.
  • Lasers of this type have a small footprint, reduced servitudes, and a very long lifetime, due to their realization with components in the solid state. They can be equipped with a frequency doubler (designated here by the reference 26) which is a non-linear cris ⁇ tal placed in the laser cavity, which allows to emit a beam having a wavelength approximately 530 nm for better absorption by the silicon (in the case of processing of integrated circuits) and finer focusing of the laser micro-beam on the surface of the object 18 (the diameter of the point of impact of the laser micro-beam on the object 18 being less than the micrometer).
  • a frequency doubler designated here by the reference 26
  • the reference 26 is a non-linear cris ⁇ tal placed in the laser cavity, which allows to emit a beam having a wavelength approximately 530 nm for better absorption by the silicon (in the case of processing of integrated circuits) and finer focusing of the laser micro-beam on the surface of the object 18 (the diameter of the point of impact of the
  • Q SWITCH acousto-optical modulator 28
  • the machine according to the invention allows precise and fine cuts of very conductive materials such as gold or aluminum, by sublimation of these materials.
  • very conductive materials such as gold or aluminum
  • the heating between neighboring parts of the surface of the object 18, which is linked to the average power deposited, is very low compared to the case of the use of a continuous laser.

Abstract

A laser micro-beam machine for processing objects (18) which have thin films, comprising a laser (10) coupled with a microscope (14) and characterized in that the laser (10) is a low average power pulsed laser producing very short pulses. The machine can be used in particular for cutting thermally conductive layers on integrated electronic circuits.

Description

MACHINE A MICRO-FAISCEAU LASER D'INTERVENTION SUR DES OBJETS A COUCHES MINCES, TELS QUE DES CIRCUITS LASER MICRO-BEAM MACHINE FOR WORKING ON THIN-FILM OBJECTS, SUCH AS CIRCUITS
I TESRES.I TESRES.
L'invention concerne une machine à micro-fais- ceau laser d'intervention sur des objets à couches minces, tels par exemple que des circuits électroniques intégrés, en particulier pour la découpe de couches minces d'un matériau thermiquement conducteur.The invention relates to a laser micro-beam machine for working on thin-filmed objects, such as for example integrated electronic circuits, in particular for cutting thin films of a thermally conductive material.
On connaît déjà, par le Brevet Français 2 608 484, une machine de ce type, qui comprend un laser continu couplé à un microscope permettant de focaliser le faisceau laser en un point particulier de l'objet et d'observer le point d'impact du faisceau laser sur l'objet. Des moyens sont prévus pour déplacer le faisceau laser à la surface de l'objet, à la vitesse de coupe sou¬ haitée.We already know, from French Patent 2 608 484, a machine of this type, which comprises a continuous laser coupled to a microscope making it possible to focus the laser beam at a particular point on the object and to observe the point of impact of the laser beam on the object. Means are provided for moving the laser beam on the surface of the object, at the desired cutting speed.
Avec cette machine connue, il peut se poser un problème de localisation et de contrôle de la coupe réa¬ lisée par le faisceau laser, lorsque celui-ci passe sur une piste de matériau thermiquement bon conducteur, par exemple une piste d'aluminium très' étroite, car il peut alors se produire une fusion quasi instantanée de la piste d'aluminium avec une diffusion de chaleur très im¬ portante dans les zones avoisinantes qui risquent d'être endommagées.With this known machine, there may be a problem in locating and controlling the cut made by the laser beam, when the latter passes over a track of thermally good conductive material, for example a very 'aluminum track'. narrow, because it can then produce an almost instantaneous melting of the aluminum track with a very significant heat diffusion in the neighboring areas which risk being damaged.
La présente invention a notamment pour but d'éviter cet inconvénient, et de perfectionner cette ma¬ chine de façon à permettre une coupe très fine et très précise de couches minces réalisées en particulier en ma- tières bonnes conductrices de la chaleur.The object of the present invention is in particular to avoid this drawback, and to improve this machine so as to allow a very fine and very precise cut of thin layers made in particular of materials which are good conductors of heat.
L'invention propose, à cet effet, une machine à micro-faisceau laser du type précité, comprenant un la¬ ser couplé à un mrcrσs"cope permettant de focaliser le point d'impact du faisceau laser sur un objet à couches minces, tel qu'un circuit électronique intégré par exemple, caractérisée en ce que le laser est un laser puisé, a impulsions de courte durée et de puissance moyenne faible.To this end, the invention proposes a laser micro-beam machine of the aforementioned type, comprising a laser coupled to a mrcrσs " cope making it possible to focus the point of impact of the laser beam on an object with thin layers, such as an integrated electronic circuit for example, characterized in that the laser is a laser pulsed, has short duration pulses and low average power.
Avantageusement, la durée des impulsions est comprise entre quelques nanosecondes et quelques cen- taines de nanosecondes environ, leur fréquence de répéti¬ tion est comprise entre 100 Hz et quelques kHz environ, l'énergie du faisceau laser est d'environ 20 à 100 micro¬ joules par impulsion, tandis que la puissance moyenne du laser est d'environ 20 à 100 mW. Grâce à la durée très brève des impulsions émises par le laser, la chaleur reste confinée dans une zone localisée au point d'impact du faisceau laser sur une couche mince, de sorte que l'on peut réaliser une coupe très rapide et précise de cette couche mince par sublimation de la matière de cette couche mince, sans risque d'endommager les zones avoisinantes, et qu'en outre l'énergie dépensée pour réaliser cette coupe est très inférieure à l'énergie correspondante nécessaire dans le cas de l'utilisation d'un laser continu. Par exemple, le laser continu utilisé dans la machine décrite dans le brevet français 2 608 484 a une puissance de l'ordre du Watt, tandis que le laser puisé utilisé dans le cadre de la présente invention a une puissance moyenne de l'ordre de 40 à 50 mW, soit vingt fois plus faible en- viron.Advantageously, the duration of the pulses is between a few nanoseconds and a few hundred nanoseconds approximately, their repetition frequency is between 100 Hz and a few kHz approximately, the energy of the laser beam is approximately 20 to 100 micro ¬ joules per pulse, while the average power of the laser is around 20 to 100 mW. Thanks to the very short duration of the pulses emitted by the laser, the heat remains confined in an area localized at the point of impact of the laser beam on a thin layer, so that one can achieve a very fast and precise cut of this thin layer by sublimation of the material of this thin layer, without risk of damaging the surrounding areas, and in addition the energy expended to make this cut is much lower than the corresponding energy required in the case of use of a continuous laser. For example, the continuous laser used in the machine described in French patent 2 608 484 has a power of about Watt, while the pulsed laser used in the context of the present invention has an average power of about 40 to 50 mW, about twenty times lower.
Selon une autre caractéristique de l'invention, le laser est à composants à état solide, du type YAG ou YLF, et est pompé par une lampe à éclair ou une diode laser. Un laser de ce type est fiable, a une durée de vie très élevée, et des servitudes réduites.According to another characteristic of the invention, the laser is made of solid state components, of the YAG or YLF type, and is pumped by a flash lamp or a laser diode. A laser of this type is reliable, has a very long service life, and reduced servitudes.
Selon encore une autre caractéristique de l'invention, le laser est associé à un doubleur de fré- quence, de façon à émettre un faisceau de longueur d'onde de 530 nm environ, ce qui permet, d'une part, une bonne absorption par le silicium et, d'autre part, de réduire le diamètre du point d'impact du faisceau laser sur l'objet, et donc d'obtenir une meilleure finesse de coupe.According to yet another characteristic of the invention, the laser is associated with a frequency doubler, so as to emit a beam of wavelength of about 530 nm, which allows, on the one hand, good absorption by silicon and, on the other hand, to reduce the diameter of the point of impact of the laser beam on the object, and therefore to obtain better cutting finesse.
Dans la description qui suit, faite à titre d'exemple, on se réfère au dessin annexé, qui représente schématiquement une machine selon l'invention.In the description which follows, given by way of example, reference is made to the appended drawing, which schematically represents a machine according to the invention.
Cette machine est par exemple du type décrit dans le Brevet Français 2 608 484 et comprend alors es¬ sentiellement un laser 10 à la sortie duquel est prévu un système optique 12 menant à un microscope 14 dont un ob¬ jectif 16 est orienté vers un objet 18 à couches minces. Des moyens d'éclairage 20 sont reliés de façon appropriée au microscope 14, qui est lui-même relié à des moyens 22 de visualisation permettant d'observer l'action du micro- faisceau laser sur l'objetr 18. Des moyens 24 de commande du laser 10 et du déplacement du micro-faisceau laser sur la surface de l'objet 18, sont également prévus.This machine is for example of the type described in French Patent 2,608,484 and then essentially comprises a laser 10 at the outlet of which is provided an optical system 12 leading to a microscope 14 of which an objective 16 is oriented towards an object 18 with thin layers. Lighting means 20 are suitably connected to the microscope 14, which is itself connected to display means 22 making it possible to observe the action of the laser microbeam on the object 18. Control means 24 laser 10 and the displacement of the laser micro-beam on the surface of the object 18 are also provided.
Dans le Brevet Français précité, la voie de transmission du faisceau laser, comprenant le système op- tique 12 et le microscope 14, la voie d'éclairage reliant le microscope 14 aux moyens d'éclairage 20, et la voie de visualisation, reliant le microscope- 14 aux moyens de vi¬ sualisation 22, sont portés par une même platine rigide et indéformable, montée sur un bâti fixe. Selon La présente invention, le générateur la¬ ser utilisé est du type à impulsions, tel par exemple qu'un laser à barreaux Ud + YAG ou YLF, pompé par une lampe à éclair ou une diode laser, et ayant une puissance moyenne de l'ordre de 40 mW, avec une énergie de 40 J par impulsion, la fréquence de répétition des impulsions étant de 1'ordre de 1 kHz.In the aforementioned French Patent, the laser beam transmission path, comprising the optical system 12 and the microscope 14, the lighting path connecting the microscope 14 to the lighting means 20, and the display path, connecting the microscope- 14 by means of vi¬ sualisation 22, are carried by the same rigid and non-deformable plate, mounted on a fixed frame. According to the present invention, the generator used is of the pulse type, such as for example a laser with bars Ud + YAG or YLF, pumped by a flash lamp or a laser diode, and having an average power of 1 40 mW, with an energy of 40 J per pulse, the pulse repetition frequency being of the order of 1 kHz.
Les lasers de ce type ont un faible encombre¬ ment, des servitudes réduites, et une durée de vie très élevée, du fait de leur réalisation avec des composants à l'état solide. Ils peuvent être équipés d'un doubleur de fré¬ quence (désigné ici par la référence 26) qui est un cris¬ tal non linéaire placé dans la cavité laser, ce qui per¬ met d'émettre un faisceau ayant une longueur d'onde d'environ 530 nm pour une meilleure absorption par le si¬ licium (dans le cas du traitement de circuits intégrés) et une focalisation plus fine du micro-faisceau laser sur la surface de l'objet 18 (le diamètre du point d'impact du micro-faisceau laser sur l'objet 18 étant inférieur au micromètre) .Lasers of this type have a small footprint, reduced servitudes, and a very long lifetime, due to their realization with components in the solid state. They can be equipped with a frequency doubler (designated here by the reference 26) which is a non-linear cris¬ tal placed in the laser cavity, which allows to emit a beam having a wavelength approximately 530 nm for better absorption by the silicon (in the case of processing of integrated circuits) and finer focusing of the laser micro-beam on the surface of the object 18 (the diameter of the point of impact of the laser micro-beam on the object 18 being less than the micrometer).
On peut également prévoir dans la cavité laser un modulateur acousto-optique 28 (communément appelé Q SWITCH) permettant d'obtenir des impulsions très brèves.One can also provide in the laser cavity an acousto-optical modulator 28 (commonly called Q SWITCH) making it possible to obtain very short pulses.
La machine selon 1'invention permet des coupes précises et fines de matériaux très conducteurs tels que l'or ou l'aluminium, par sublimation de ces matériaux. On a pu par exemple découper des lignes d'aluminium ayant de très petites dimensions (un micromètre environ) posées sur un substrat thermiquement isolant (du quartz) ainsi que des feuilles d'or ayant une épaisseur supérieure à lOμm, en utilisant un laser à impulsions du type précité. L'échauffe ent des parties avoisinantes de la surface de l'objet 18, qui est lié à la puissance moyenne déposée, est très réduit par rapport au cas de l'utilisation d'un laser continu.The machine according to the invention allows precise and fine cuts of very conductive materials such as gold or aluminum, by sublimation of these materials. We could for example cut aluminum lines having very small dimensions (about one micrometer) placed on a thermally insulating substrate (quartz) as well as gold sheets having a thickness greater than 10 μm, using a laser pulses of the aforementioned type. The heating between neighboring parts of the surface of the object 18, which is linked to the average power deposited, is very low compared to the case of the use of a continuous laser.
Il a été ainsi possible de réaliser des lignes de coupe ayant une largeur inférieure à 0,8 μm (comprise entre 0,6 et 0,8 μ ) , la profondeur de coupe étant com¬ prise entre 0,1 et 1 μ au nimimum et pouvant atteindre des valeurs plus élevées lorsqu'on le souhaite. La vi¬ tesse de déplacement du faisceau laser sur la cible est typiquement de quelques mm par seconde. La durée de coupe d'une ligne très fine ayant une largeur d'1 μ est de 10 ns. It was thus possible to make cutting lines having a width of less than 0.8 μm (between 0.6 and 0.8 μ), the cutting depth being between 0.1 and 1 μ at minimum and can reach higher values when desired. The speed of movement of the laser beam on the target is typically a few mm per second. The cutting time for a very fine line with a width of 1 μ is 10 ns.

Claims

REVENDICATIONS 1. Machine à micro-faisceau laser d'intervention sur des objets (18) à couches minces, tels par exemple que des circuits électroniques intégrés, en particulier pour la découpe de couches minces de maté¬ riaux thermiquement conducteurs, comprenant un laser (10) couplé à un microscope (14) permettant de focaliser le point d'impact du faisceau laser sur un objet précité, caractérisée en ce que le laser (10) est un laser puisé à impulsions de courte durée et de puissance moyenne faible. CLAIMS 1. Laser micro-beam machine for working on thin-film objects (18), such as for example integrated electronic circuits, in particular for cutting thin layers of thermally conductive materials, comprising a laser ( 10) coupled to a microscope (14) making it possible to focus the point of impact of the laser beam on an aforementioned object, characterized in that the laser (10) is a pulsed laser of short duration pulses and of low average power.
2. Machine selon la revendication 1, caracté¬ risée en ce que la durée des impulsions est comprise entre quelques nanosecondes et quelques centaines de na- nosecondes environ.2. Machine according to claim 1, characterized in that the duration of the pulses is between a few nanoseconds and a few hundred nanoseconds approximately.
3. Machine selon la revendication 1 ou 2, ca¬ ractérisée en ce que la fréquence de répétition des im¬ pulsions est comprise entre 100 Hz et quelques kHz envi¬ ron. 3. Machine according to claim 1 or 2, ca¬ acterized in that the repetition frequency of the pulses is between 100 Hz and a few kHz envi¬ ron.
4. Machine selon l'une des revendications pré¬ cédentes, caractérisée en ce que l'énergie du faisceau laser est d'environ 20 à 100 micro-joules par impulsion.4. Machine according to one of the preceding claims, characterized in that the energy of the laser beam is approximately 20 to 100 micro-joules per pulse.
5. Machine selon l'une des revendications pré¬ cédentes, caractérisée en ce que la puissance moyenne du laser est d'environ 20 à 100 milli atts.5. Machine according to one of the preceding claims, characterized in that the average power of the laser is approximately 20 to 100 milli atts.
6. Machine selon l'une des revendications pré¬ cédentes, caractérisée -en ce que le laser (10) est un la¬ ser à composants à état solide du type YAG ou YLF, pompé par une lampe à éclair ou une diode laser. 6. Machine according to one of the preceding claims, characterized in that the laser (10) is a serum with solid state components of the YAG or YLF type, pumped by a flash lamp or a laser diode.
7. Machine selon la revendication 6, caracté¬ risée en ce que le laser est associé à un doubleur de fréquence (26) pour émettre un faisceau de longueur d'onde d'environ 530 nano ètres environ.7. Machine according to claim 6, caracté¬ ized in that the laser is associated with a frequency doubler (26) to emit a beam of wavelength of about 530 nanometers approximately.
8. Machine selon la revendication 6 ou 7, ca- ractérisée en ce que le laser (10) comprend un modulateur acousto-optique (28), permettant d'obtenir des impulsions très brèves. 8. Machine according to claim 6 or 7, characterized in that the laser (10) comprises a modulator acousto-optics (28), allowing very short pulses to be obtained.
PCT/FR1991/000061 1990-02-02 1991-01-31 Laser micro-film machine for processing objects having thin films such as integrated circuits WO1991011288A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR90/01226 1990-02-02
FR9001226A FR2657803A1 (en) 1990-02-02 1990-02-02 LASER MICRO-BEAM MACHINE FOR WORKING ON THIN-FILM OBJECTS, SUCH AS INTEGRATED CIRCUITS.

Publications (1)

Publication Number Publication Date
WO1991011288A1 true WO1991011288A1 (en) 1991-08-08

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FR (1) FR2657803A1 (en)
WO (1) WO1991011288A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2727780A1 (en) * 1994-12-01 1996-06-07 Solaic Sa Laser surface treatment of electronic modules support band

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608484A1 (en) * 1986-12-23 1988-06-24 Bertin & Cie LASER MICROFINANCE MACHINE FOR INTERVENTION ON THIN-FILM OBJECTS OF MATERIAL
WO1989012525A1 (en) * 1988-06-17 1989-12-28 N.V. Philips' Gloeilampenfabrieken Method of micro-working the surface of a workpiece while using a laser beam

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608484A1 (en) * 1986-12-23 1988-06-24 Bertin & Cie LASER MICROFINANCE MACHINE FOR INTERVENTION ON THIN-FILM OBJECTS OF MATERIAL
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Third IEEE/CHMT International Electronic Manufacturing Technology Symposium "Manufacturing Technology - The Competitive Advantage", 12 à 14 octobre 1987, Disneyland Hotel, Anaheim, CA; IEEE, 1987 (US) G. Auvert et al.: "A continuous argon laser based system for micromachining of integrated circuits", pages 137_142 *

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Publication number Priority date Publication date Assignee Title
FR2727780A1 (en) * 1994-12-01 1996-06-07 Solaic Sa Laser surface treatment of electronic modules support band

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FR2657803B1 (en) 1994-11-25
FR2657803A1 (en) 1991-08-09

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