WO1991009996A3 - Systeme de transport, en particulier pour le transport de monocristaux de silicium a travers la cuve d'un reacteur de recherche - Google Patents

Systeme de transport, en particulier pour le transport de monocristaux de silicium a travers la cuve d'un reacteur de recherche Download PDF

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Publication number
WO1991009996A3
WO1991009996A3 PCT/DE1990/000976 DE9000976W WO9109996A3 WO 1991009996 A3 WO1991009996 A3 WO 1991009996A3 DE 9000976 W DE9000976 W DE 9000976W WO 9109996 A3 WO9109996 A3 WO 9109996A3
Authority
WO
WIPO (PCT)
Prior art keywords
tube
containers
container
transport system
threaded sleeve
Prior art date
Application number
PCT/DE1990/000976
Other languages
German (de)
English (en)
Other versions
WO1991009996A2 (fr
Inventor
Florian Fischer
Original Assignee
Florian Fischer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Florian Fischer filed Critical Florian Fischer
Priority to US07/916,125 priority Critical patent/US5324331A/en
Priority to EP91900156A priority patent/EP0506690B1/fr
Priority to DE59009357T priority patent/DE59009357D1/de
Publication of WO1991009996A2 publication Critical patent/WO1991009996A2/fr
Publication of WO1991009996A3 publication Critical patent/WO1991009996A3/fr

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21C—NUCLEAR REACTORS
    • G21C1/00—Reactor types
    • G21C1/30—Subcritical reactors ; Experimental reactors other than swimming-pool reactors or zero-energy reactors
    • G21C1/306—Irradiation loops
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/103—Mechanisms for moving either the charge or heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/106—Continuous processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/30—Nuclear fission reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Handcart (AREA)
  • Attitude Control For Articles On Conveyors (AREA)
  • Silicon Compounds (AREA)

Abstract

La présente invention se rapporte à un système de transport pour récipients (11) ou matériaux à l'intérieur et le long d'un tube sensiblement vertical (5, 6), les récipients (11) tournant simultanément autour de l'axe du tube. Afin de permettre une construction simple, malgré le manque d'espace, il est proposé de concevoir le tube comme tube tournant vertical (5) prolongé, à l'extrémité de la voie de transport, d'une douille filetée (6) maintenue de manière à résister à la torsion. Dans le tube tournant sont prévues des rainures de guidage (15) orientées dans le sens longitudinal, dans lesquelles s'engagent les becs (14) des récipients. Ces becs (14) s'engagent également dans la rainure filetée (16) de la douille filetée (6). Les récipients (11) présentent sur leurs parties supérieure et inférieure des accouplements, p. ex. une denture droite (13), lesquels transmettent, lors du transport d'un train de récipients (11) placés bout à bout, un mouvement de rotation de récipient à récipient, mais lesquels permettent aussi une séparation des récipients (11) entre eux en direction de l'axe du tube. Lorsque le tube tournant (5) effectue une rotation, les récipients sont vissés successivement au travers de la douille filetée (6), laquelle reçoit au moins un récipient (11). Ce système de transport est particulièrement apte à transporter des cristaux de silicium se trouvant dans le récipient (11) à travers le réservoir d'eau lourde (2) d'un réacteur de recherche afin de doper les cristaux de silicium par bombardement avec des neutrons.
PCT/DE1990/000976 1989-12-21 1990-12-19 Systeme de transport, en particulier pour le transport de monocristaux de silicium a travers la cuve d'un reacteur de recherche WO1991009996A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US07/916,125 US5324331A (en) 1989-12-21 1990-12-19 Transport system, in particular for transporting silicon monocrystals through the tank of a research reactor
EP91900156A EP0506690B1 (fr) 1989-12-21 1990-12-19 Systeme de transport, en particulier pour le transport de monocristaux de silicium a travers la cuve d'un reacteur de recherche
DE59009357T DE59009357D1 (de) 1989-12-21 1990-12-19 Transportsystem, insbesondere zum transportieren von silizium einkristallen durch das becken eines forschungsreaktors.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3942387.5 1989-12-21
DE3942387A DE3942387A1 (de) 1989-12-21 1989-12-21 Transportsystem, insbesondere zum transportieren von siliziumeinkristallen durch das becken eines forschungsreaktors

Publications (2)

Publication Number Publication Date
WO1991009996A2 WO1991009996A2 (fr) 1991-07-11
WO1991009996A3 true WO1991009996A3 (fr) 1992-03-19

Family

ID=6396081

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1990/000976 WO1991009996A2 (fr) 1989-12-21 1990-12-19 Systeme de transport, en particulier pour le transport de monocristaux de silicium a travers la cuve d'un reacteur de recherche

Country Status (5)

Country Link
US (1) US5324331A (fr)
EP (1) EP0506690B1 (fr)
JP (1) JPH05504868A (fr)
DE (2) DE3942387A1 (fr)
WO (1) WO1991009996A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1233425B1 (fr) * 2001-02-16 2006-11-15 Framatome ANP GmbH Réacteur nucléaire, notamment réacteur de recherche ou d'essai
AU2002300581B2 (en) * 2002-08-15 2004-06-24 Areva Np Gmbh Automatic Cooling of Irradiation Samples at a Research Reactor
US7407447B2 (en) * 2002-11-08 2008-08-05 Taylor Made Golf Company, Inc. Movable weights for a golf club head
JP7200921B2 (ja) * 2019-12-20 2023-01-10 株式会社Sumco シリコンインゴットへの中性子照射方法、シリコンインゴットの製造方法およびシリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2438710A1 (de) * 1974-08-12 1976-02-26 Siemens Ag Vorrichtung zum gezielten einbringen von dotierungsmaterial in einen halbleiterkristallstab auf radiogenem wege
GB2162504A (en) * 1984-07-17 1986-02-05 Nippon Light Metal Co Process and continuous reaction furnace for production of beta -type silicon carbide whiskers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1946541C3 (de) * 1969-09-13 1980-09-04 Hochtemperatur-Reaktorbau Gmbh, 5000 Koeln Vorrichtung zum Auswechseln eines radioaktiver Bestrahlung ausgesetzten Bauelementes
DE2356376A1 (de) * 1973-11-12 1975-05-15 Siemens Ag Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung
DE2433991A1 (de) * 1974-07-15 1976-02-05 Siemens Ag Verfahren zum dotieren einer halbleiterschicht
GB1542363A (en) * 1977-05-25 1979-03-14 Pryamilov J Nuclear reactors
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
DE3516856A1 (de) * 1985-05-10 1986-11-13 Kernforschungsanlage Jülich GmbH, 5170 Jülich Einrichtung zum positionieren und drehen eines elementes
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
US4733631B1 (en) * 1986-09-30 1993-03-09 Apparatus for coating substrate devices
JP2905857B2 (ja) * 1989-08-11 1999-06-14 東京エレクトロン株式会社 縦型処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2438710A1 (de) * 1974-08-12 1976-02-26 Siemens Ag Vorrichtung zum gezielten einbringen von dotierungsmaterial in einen halbleiterkristallstab auf radiogenem wege
GB2162504A (en) * 1984-07-17 1986-02-05 Nippon Light Metal Co Process and continuous reaction furnace for production of beta -type silicon carbide whiskers

Also Published As

Publication number Publication date
DE3942387C2 (fr) 1991-09-26
EP0506690A1 (fr) 1992-10-07
EP0506690B1 (fr) 1995-06-28
DE3942387A1 (de) 1991-06-27
US5324331A (en) 1994-06-28
WO1991009996A2 (fr) 1991-07-11
JPH05504868A (ja) 1993-07-22
DE59009357D1 (de) 1995-08-03

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