WO1991001055A1 - Laser solide a longueur d'onde d'emission 0,5-0,65 micrometres - Google Patents
Laser solide a longueur d'onde d'emission 0,5-0,65 micrometres Download PDFInfo
- Publication number
- WO1991001055A1 WO1991001055A1 PCT/FR1990/000481 FR9000481W WO9101055A1 WO 1991001055 A1 WO1991001055 A1 WO 1991001055A1 FR 9000481 W FR9000481 W FR 9000481W WO 9101055 A1 WO9101055 A1 WO 9101055A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser
- wavelength
- laser diode
- bar
- cavity
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
Definitions
- the invention relates to a solidp laser with an emission wavelength between 0.5 and 0.65 micrometers.
- Such a laser can be used in particular in isotopic separation processes.
- the methods of separation of isotopes of Uranium by laser have been studied for several years. Their implementation requires the selective excitation of the uranium isotopes from laser sources whose frequency must be particularly well adjusted and controlled.
- laser sources whose frequency must be particularly well adjusted and controlled.
- This last approach uses the copper vapor laser die pumping a dye laser, whose technology is quite critical.
- the invention therefore relates to a laser emitting at a wavelength between 0.55 ⁇ m and O. G5 ⁇ m and solving these drawbacks.
- the invention therefore relates to a solid laser with an emission wavelength 0.5 - 0.65 micrometers, characterized in that it comprises: - a laser bar based on HP Mg capitaSiO. doped chromium placed in a resonant cavity; - at least one laser diode emitting towards the bar a pump beam of wavelength between 0.75 and 0.8 micrometers; a frequency doubling crystal receiving a beam emitted by the laser bar and emitting in exchange a beam of wavelength 0.5-0.65 micrometers.
- FIG. 1 a first embodiment of the device according to the invention
- Figure 2 an alternative embodiment of the device of Figure 1
- - Figure 3 a second embodiment of the device according to the invention
- This type of laser diode was specially designed for the invention. It is produced from a ternary compound G AI A- 3 1-XX e t its composition is such that
- This material is the site of laser emission by recombination of electron-hole pairs. This is assembled in a structure of the optical waveguide type by inserting an active layer of Ga 1_. - ⁇ Al x As between two layers of
- Ga 1 _ Al As of aluminum composition such as 0.2 ⁇ y ⁇
- the wave generated by the laser bar 1 excited by the laser diode has a wavelength covering the spectrum between 1, 1 and 1, 3 ⁇ m. This wave from the optical cavity is then doubled in frequency in a non-linear crystal.
- the chrome doped Forsterite laser (Cr: Mg mannerSiO.) Has an emission spectrum at room temperature ranging from 1.167 ⁇ m to 1.345 ⁇ m with an emission peak centered on
- the fluorescence lifetime is of the order of 15 ⁇ s, which is compatible with laser diodes. It is particularly suitable for pumping by laser diodes, especially when you want to work at high speed.
- the filling rate (excitation time, repetition frequency) is an important parameter that should be taken into account.
- Such a source doubled in frequency makes it possible to adapt the emission wavelength to that to be implemented in operations of selective excitation of isotopes of Uranium, in the band 0.55 - 0.65 ⁇ m.
- Figure 1 shows a first embodiment of the laser device according to the invention.
- a chromed doped Forsterite bar 1 (Mg DepositSi 0.) is placed in an optical cavity constituted by one of the two mirrors 3 and 4.
- the optical cavity can also be produced by two opposite faces of the bar.
- the laser diodes 2.0, 2.1 to 2.n light the rod 1 with beams of wavelength 0, 8 ⁇ m. These laser diodes are supplied with current by a modulator 7.
- the light beam generated by the bar 1 and leaving the laser cavity 3, 4 is transmitted to a frequency doubler 5 in LiNb0_ or in BBO for example.
- the laser diodes are made up as follows:
- the active part consists of an alloy based on
- GaAIAs with an aluminum concentration which allows to have a laser emission for the pump . either at 0.8 ⁇ m (Ga
- a laser comprising the rod 1 made of chromium doped Forsterite, laser diodes
- n in GaAIAs and of the frequency doubler 5 makes it possible to obtain a light beam of wavelength between 1, 167 ⁇ m and 1, 345 ⁇ m which doubled by the frequency doubler gives a beam of length wave of approximately 0.6 ⁇ m (between 0.5 and 0.65 ⁇ m).
- optical cavity 3 comprises a triggering device (Q s itch in English terminology).
- FIG. 3 represents an exemplary embodiment comprising a laser diode 2 illuminating the laser bar 1 by one of the. ends of the cavity.
- the laser diode 2 has the same constitution as the laser diodes 2.0, 2.1 to 2.n) of FIGS. 1 and 2 and emits an excitation light beam of wavelength 0.8 ⁇ m towards the laser bar 1 in Forsterite.
- the device 6 is a triggering device.
- the beam leaving the cavity 3, 4 containing the laser bar 1 and the triggering device 6, is transmitted to a frequency doubler 5 which provides a beam of double frequency (wavelength 0.6 ⁇ m).
- the laser diode 2 could be controlled by a modulator.
- the optical cavity 3, 4 could then be constituted by two opposite cleaved faces of the laser bar 1.
- the frequency doubling crystal 5 located outside the cavity is provided, but as shown, it can also be placed in the laser cavity, preferably between the laser bar 1 and the trigger cell 6
- the laser diodes can also be on either side of the laser bar 1 or can surround the laser bar.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8909109A FR2649548B1 (fr) | 1989-07-06 | 1989-07-06 | Laser solide a longueur d'onde d'emission 0,5-0,65 micrometres |
FR89/09109 | 1989-07-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1991001055A1 true WO1991001055A1 (fr) | 1991-01-24 |
Family
ID=9383544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR1990/000481 WO1991001055A1 (fr) | 1989-07-06 | 1990-06-28 | Laser solide a longueur d'onde d'emission 0,5-0,65 micrometres |
Country Status (6)
Country | Link |
---|---|
US (1) | US5173910A (fr) |
EP (1) | EP0433432A1 (fr) |
JP (1) | JPH04500746A (fr) |
CA (1) | CA2035889A1 (fr) |
FR (1) | FR2649548B1 (fr) |
WO (1) | WO1991001055A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998025327A1 (fr) * | 1996-12-05 | 1998-06-11 | Laser Power Corporation | Laser a conversion de frequence |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04352483A (ja) * | 1991-05-30 | 1992-12-07 | Tosoh Corp | 全固体化波長可変パルスレーザー |
FR2681988A1 (fr) * | 1991-09-27 | 1993-04-02 | Thomson Csf | Laser de puissance a deflexion. |
US5721749A (en) * | 1996-01-30 | 1998-02-24 | Trw Inc. | Laser pulse profile control by modulating relaxation oscillations |
FR2751797B1 (fr) * | 1996-07-23 | 1999-02-05 | Thomson Csf | Dispositif de mesure d'alignement d'une chaine d'amplification laser |
FR2759208B1 (fr) * | 1997-01-31 | 1999-05-07 | Thomson Csf | Dispositif de controle du pointage et de la focalisation des chaines laser sur une cible |
FR2784185B1 (fr) | 1998-10-06 | 2001-02-02 | Thomson Csf | Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation |
FR2811148B1 (fr) | 2000-06-30 | 2006-07-21 | Thomson Csf | Laser pompe et milieu laser optimise |
JP2002033538A (ja) * | 2000-07-13 | 2002-01-31 | Mitsubishi Electric Corp | 半導体レーザ励起固体レーザ装置 |
FR2814281B1 (fr) * | 2000-09-19 | 2003-08-29 | Thomson Lcd | Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice |
FR2825463B1 (fr) * | 2001-05-30 | 2003-09-12 | Thales Sa | Gyrometre laser etat solide comportant un bloc resonateur |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2175127A (en) * | 1985-05-01 | 1986-11-19 | Spectra Physics | Nd-yag laser |
EP0319332B1 (fr) * | 1987-12-04 | 1994-03-30 | Robert R. Alfano | Système laser à forstérite dopée au chrome |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4809291A (en) * | 1984-11-26 | 1989-02-28 | Board Of Trustees, Of Leland Stanford Jr U. | Diode pumped laser and doubling to obtain blue light |
JP2679057B2 (ja) * | 1987-09-10 | 1997-11-19 | セイコーエプソン株式会社 | 半導体レーザの製造方法 |
US4932031A (en) * | 1987-12-04 | 1990-06-05 | Alfano Robert R | Chromium-doped foresterite laser system |
US5025446A (en) * | 1988-04-01 | 1991-06-18 | Laserscope | Intra-cavity beam relay for optical harmonic generation |
-
1989
- 1989-07-06 FR FR8909109A patent/FR2649548B1/fr not_active Expired - Fee Related
-
1990
- 1990-06-28 US US07/655,429 patent/US5173910A/en not_active Expired - Fee Related
- 1990-06-28 WO PCT/FR1990/000481 patent/WO1991001055A1/fr not_active Application Discontinuation
- 1990-06-28 JP JP2509998A patent/JPH04500746A/ja active Pending
- 1990-06-28 CA CA002035889A patent/CA2035889A1/fr not_active Abandoned
- 1990-06-28 EP EP90910784A patent/EP0433432A1/fr not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2175127A (en) * | 1985-05-01 | 1986-11-19 | Spectra Physics | Nd-yag laser |
EP0319332B1 (fr) * | 1987-12-04 | 1994-03-30 | Robert R. Alfano | Système laser à forstérite dopée au chrome |
Non-Patent Citations (4)
Title |
---|
Applied Optics, Volume 28, No. 9, 1er Mai 1989, V. PETRICEVIC et al.: "Near Infrared Tunable Operation of Chromium Doped Forsterite Laser", pages 1609-1611 voir Abrege * |
Applied Physics Letters, Volume 52, No. 26, 27 Juin 1988, American Institute of Physics, D.C. EDELSTEIN et al.: "Femtosecond Ultraviolet Pulse Generation in beta-BaB204", pages 2211-2213 voir Abrege * |
Optics Communications, Volume 71, Nos. 3/4, 15 Mai 1989, Elsevier Science Publishers B.V., (NL) C. ZIMMERMANN et al.: "Doubly-Resonant Second-Harmonic Generation in beta-Barium-Borate", pages 229-234 voir Abrege * |
PATENT ABSTRACTS OF JAPAN, Volume 13, No. 285 (E-780) (3633) 29 Juin 1989 & JP, A,01 069086 (Seiko Espon Corp) 15 Mars 1989 voir Abrege * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998025327A1 (fr) * | 1996-12-05 | 1998-06-11 | Laser Power Corporation | Laser a conversion de frequence |
Also Published As
Publication number | Publication date |
---|---|
CA2035889A1 (fr) | 1991-01-07 |
FR2649548B1 (fr) | 1994-08-26 |
EP0433432A1 (fr) | 1991-06-26 |
JPH04500746A (ja) | 1992-02-06 |
FR2649548A1 (fr) | 1991-01-11 |
US5173910A (en) | 1992-12-22 |
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