UST101201I4 - Method for making stable nitride-defined Schottky barrier diodes - Google Patents

Method for making stable nitride-defined Schottky barrier diodes Download PDF

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Publication number
UST101201I4
UST101201I4 US06/254,039 US25403981A UST101201I4 US T101201 I4 UST101201 I4 US T101201I4 US 25403981 A US25403981 A US 25403981A US T101201 I4 UST101201 I4 US T101201I4
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United States
Prior art keywords
nitride
oxide
ring
cavity
schottky barrier
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Pending
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US06/254,039
Inventor
Narasipur G. Anantha
Harsaran S. Bhatia
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Priority to US06/254,039 priority Critical patent/UST101201I4/en
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Publication of UST101201I4 publication Critical patent/UST101201I4/en
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    • H10W20/069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10P14/412—
    • H10P76/4085—

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  • Electrodes Of Semiconductors (AREA)

Abstract

Excessive leakage after initial forward stress, exhibited by subsequently reverse stressed nitride defined, Schottky barrier diodes is solved by the elimination of the "mouse hole" or undercut cavity in the oxide layer beneath the nitride ring defining the Schottky contact to the underlying silicon. The aforementioned cavity is filled by depositing chemical vapor deposited (CVD) oxide onto the nitride layer, into the nitride ring and the undercut oxide cavity beneath the ring and onto the underlying silicon substrate exposed through the nitride ring. The CVD oxide is then reactively ion etched to remove it except along the vertical walls of the nitride ring and the oxide cavity. The Schottky metal is deposited on the silicon substrate exposed by the reactive ion etching step.
US06/254,039 1980-03-24 1981-04-14 Method for making stable nitride-defined Schottky barrier diodes Pending UST101201I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/254,039 UST101201I4 (en) 1980-03-24 1981-04-14 Method for making stable nitride-defined Schottky barrier diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13306980A 1980-03-24 1980-03-24
US06/254,039 UST101201I4 (en) 1980-03-24 1981-04-14 Method for making stable nitride-defined Schottky barrier diodes

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US13306980A Continuation 1980-03-24 1980-03-24

Publications (1)

Publication Number Publication Date
UST101201I4 true UST101201I4 (en) 1981-11-03

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ID=26831007

Family Applications (1)

Application Number Title Priority Date Filing Date
US06/254,039 Pending UST101201I4 (en) 1980-03-24 1981-04-14 Method for making stable nitride-defined Schottky barrier diodes

Country Status (1)

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US (1) UST101201I4 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796069A (en) 1981-05-13 1989-01-03 International Business Machines Corporation Schottky diode having limited area self-aligned guard ring and method for making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796069A (en) 1981-05-13 1989-01-03 International Business Machines Corporation Schottky diode having limited area self-aligned guard ring and method for making same

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